Solid-state circuit breaker and state detection method

Abstract

The invention provides a solid-state circuit breaker and a state detection method, and relates to the technical field of circuits. The solid-state circuit breaker comprises a power semiconductor device, an electric signal sampling circuit and a control unit, the power semiconductor device is used for being connected between a preset power supply module and a loop where an external load is located. The input end of the electric signal sampling circuit is connected with a preset wiring end of the power semiconductor device to detect a wiring electric signal of the power semiconductor device; the control unit is connected with the control end of the power semiconductor device and is used for providing a driving voltage signal for the power semiconductor device; the control unit is further connected with the output end of the electric signal sampling circuit and used for determining the health state of the power semiconductor device according to the wiring electric signal. According to the invention, the power semiconductor device in the solid-state circuit breaker can be effectively detected, and the working risk of the solid-state circuit breaker is avoided.

Description

Technical Field

[0001] The present invention relates to the field of circuit technology, and in particular to a solid-state circuit breaker and a state detection method. Background Art

[0002] With the gradual development of modern high-power power electronic devices, solid-state circuit breakers have been widely used due to a series of advantages.

[0003] The solid-state circuit breakers currently available on the market mainly realize their functions by driving the power semiconductor devices to turn on and off. However, there is no effective solution for detecting the status of the power semiconductor devices in the existing solid-state circuit breakers.

[0004] When a power semiconductor device is in an abnormal state, the health status of the power semiconductor device cannot be determined in time, which causes potential risks when the solid-state circuit breaker is working. Summary of the invention

[0005] The object of the present invention is to provide a solid-state circuit breaker and a state detection method to address the deficiencies in the above-mentioned prior art, so as to effectively detect the health status of power semiconductor devices in the solid-state circuit breaker and avoid the working risks of the solid-state circuit breaker.

[0006] To achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:

[0007] In a first aspect, an embodiment of the present application provides a solid-state circuit breaker, the solid-state circuit breaker comprising: a power semiconductor device, an electrical signal sampling circuit, and a control unit;

[0008] The power semiconductor device is used to be connected between a preset power supply module and a loop where an external load is located;

[0009] The input end of the electrical signal sampling circuit is connected to the preset wiring terminal of the power semiconductor device to detect the wiring electrical signal of the power semiconductor device;

[0010] The control unit is connected to the control terminal of the power semiconductor device and is used to provide a driving voltage signal for the power semiconductor device;

[0011] The control unit is also connected to the output end of the electrical signal sampling circuit, and is used to determine the health status of the power semiconductor device according to the wiring electrical signal.

[0012] Optionally, the electrical signal sampling circuit includes: an incoming voltage sampling circuit and an outgoing voltage sampling circuit;

[0013] The input end of the incoming line voltage sampling circuit is connected to the incoming line end of the power semiconductor device to detect the incoming line voltage signal of the power semiconductor device;

[0014] The input end of the output voltage sampling circuit is connected to the output end of the power semiconductor device to detect the output voltage signal of the power semiconductor device. The wiring electrical signal includes: the input voltage signal and the output voltage signal.

[0015] Optionally, the electrical signal sampling circuit also includes: a current sampling circuit, the input end of the current sampling circuit is connected to the incoming line end of the power semiconductor device, and is used to detect the incoming line current signal of the power semiconductor device, and the wiring electrical signal also includes: the incoming line current signal.

[0016] Optionally, the solid-state circuit breaker further includes: a temperature sampling circuit whose distance from the power semiconductor device is within a preset distance range; the temperature sampling circuit is also connected to the control unit.

[0017] In a second aspect, an embodiment of the present application further provides a state detection method of a solid-state circuit breaker, which is applied to a control unit in a solid-state circuit breaker as described in any one of the first aspects, and the state detection method includes:

[0018] Acquire a wiring electrical signal of a power semiconductor device in the solid-state circuit breaker sampled by an electrical signal sampling circuit in the solid-state circuit breaker;

[0019] The health status of the power semiconductor device is determined according to the wiring electrical signal.

[0020] Optionally, if the electrical signal sampling circuit includes: an incoming line voltage sampling circuit and an outgoing line voltage sampling circuit; the step of obtaining the wiring electrical signal of the power semiconductor device in the solid-state circuit breaker sampled by the electrical signal sampling circuit in the solid-state circuit breaker includes:

[0021] Controlling the power semiconductor device to switch between on and off states according to a driving voltage signal of the power semiconductor device;

[0022] Acquire the incoming line voltage signal of the power semiconductor device sampled by the incoming line voltage sampling circuit after the on-off state is switched, the wiring electrical signal includes: the incoming line voltage signal;

[0023] Acquire the output line voltage signal of the power semiconductor device sampled by the output line voltage sampling circuit after the on-off state is switched, the wiring electrical signal further comprising: the output line voltage signal;

[0024] Determining the health status of the power semiconductor device according to the wiring electrical signal includes:

[0025] The on-off health state of the power semiconductor device is determined according to the incoming line voltage signal and the outgoing line voltage signal, and the on-off health state is used to indicate whether the power semiconductor device meets the corresponding on-off state under the drive of the control unit.

[0026] Optionally, if the electrical signal sampling circuit further includes: a current sampling circuit; the method of obtaining the wiring electrical signal of the power semiconductor device sampled by the electrical signal sampling circuit further includes:

[0027] Acquiring an incoming current signal of the power semiconductor device sampled by the current sampling circuit;

[0028] Calculating the on-resistance of the power semiconductor device according to the incoming line voltage signal, the outgoing line voltage signal and the incoming line current signal;

[0029] Determining the health status of the power semiconductor device according to the wiring electrical signal includes:

[0030] An on-resistance health state of the power semiconductor device is determined based on the on-resistance, where the on-resistance health state is used to indicate whether the power semiconductor device meets a preset device loss condition.

[0031] Optionally, if the solid-state circuit breaker further comprises: a temperature sampling circuit whose distance from the power semiconductor device is within a preset distance range, the method further comprises:

[0032] Acquiring an operating temperature signal of the power semiconductor device sampled by the temperature sampling circuit;

[0033] The temperature health status of the power semiconductor device is determined according to the operating temperature signal, and the temperature health status is used to indicate whether the power semiconductor device meets a preset operating temperature condition.

[0034] Optionally, the method further includes:

[0035] Acquiring a driving voltage signal of the power semiconductor device;

[0036] The driving health state of the power semiconductor device is determined according to the driving voltage signal, wherein the driving health state is used to indicate whether the driving voltage signal of the power semiconductor device meets a preset driving condition.

[0037] Optionally, determining the health status of the power semiconductor device includes:

[0038] If each sampling signal is not within the corresponding signal threshold range, counting the anomalies corresponding to each sampling signal;

[0039] The health status of the power semiconductor device is determined according to the continuous cumulative count of the abnormal count.

[0040] Optionally, the method further includes:

[0041] Sending health status prompt information of the power semiconductor device so that a user can control the working state of the solid-state circuit breaker according to the health status prompt information.

[0042] The beneficial effects of this application are:

[0043] The solid-state circuit breaker and state detection method provided in the present application samples the wiring electrical signal of the preset wiring terminal of the power semiconductor device through the electrical signal sampling circuit. The control unit can determine the health status of the corresponding dimension of the power semiconductor device according to the wiring electrical signal, and control the on and off state of the power semiconductor device to ensure the safety of the solid-state circuit breaker and avoid safety risks of the solid-state circuit breaker caused by health problems of the power semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0045] Figure 1 Principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 1 ;

[0046] Figure 2 Schematic diagram of the process of the state detection method provided in the embodiment of the present application Figure 1 ;

[0047] Figure 3 Principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 2 ;

[0048] Figure 4 Principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 3 ;

[0049] Figure 5 Schematic diagram of the process of the state detection method provided in the embodiment of the present application Figure 2 ;

[0050] Figure 6 Principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 4 ;

[0051] Figure 7Schematic diagram of the process of the state detection method provided in the embodiment of the present application Figure 3 ;

[0052] Figure 8 Schematic diagram of the process of the state detection method provided in the embodiment of the present application Figure 4 ;

[0053] Fig. 9 Schematic diagram of the process of the state detection method provided in the embodiment of the present application Figure 5 ;

[0054] Fig.10 The flow chart of the state detection method provided in the embodiment of the present application Figure 1 ;

[0055] Fig.11 Schematic diagram of the process of the state detection method provided in the embodiment of the present application Figure 6 ;

[0056] Fig.12 The flow chart of the state detection method provided in the embodiment of the present application Figure 2 ;

[0057] Fig.13 The flow chart of the state detection method provided in the embodiment of the present application Figure 3 ;

[0058] Fig.14 The flow chart of the state detection method provided in the embodiment of the present application Figure 4 ;

[0059] Fig.15 The flow chart of the state detection method provided in the embodiment of the present application Figure 5 . DETAILED DESCRIPTION

[0060] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments.

[0061] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0062] In addition, the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0063] It should be noted that, in the absence of conflict, the features in the embodiments of the present application may be combined with each other.

[0064] Please refer to Figure 1 , which is the principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 1 ,like Figure 1 As shown, the solid-state circuit breaker may include: a power semiconductor device 10 , an electrical signal sampling circuit 20 and a control unit 30 .

[0065] Among them, the power semiconductor device 10 is used to be connected between a preset power supply module and a loop where an external load is located, and the input end of the electrical signal sampling circuit 20 is connected to the preset wiring terminal of the power semiconductor device 10 to detect the wiring electrical signal of the power semiconductor device 10; the control unit 30 is connected to the control end of the power semiconductor device 10 to provide a driving voltage signal for the power semiconductor device 10; the control unit 30 is connected to the output end of the electrical signal sampling circuit 20 to determine the health status of the power semiconductor device 10 based on the wiring electrical signal.

[0066] based on Figure 1 The solid-state circuit breaker shown, the embodiment of the present application also provides a state detection method of the solid-state circuit breaker.

[0067] Please refer to Figure 2 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 1 ,like Figure 2 As shown, the method may include:

[0068] S10: Acquire the wiring electrical signal of the power semiconductor device sampled by the electrical signal sampling circuit.

[0069] S20: Determine the health status of the power semiconductor device according to the wiring electrical signal.

[0070] In this embodiment, the preset power supply module can be, for example, a DC power supply module (DC power) or an AC power supply module (AC power), and the DC power supply module or the AC power supply module is connected to the power semiconductor device 10 in the solid-state circuit breaker to supply power to the external load through the solid-state circuit breaker.

[0071] The input end of the electrical signal sampling circuit 20 is connected to a preset terminal of the power semiconductor device 10. The preset terminal can be the input terminal of the power semiconductor device 10 or the output terminal of the power semiconductor device 10. The electrical signal sampling circuit 20 samples different wiring electrical signals when connected to different wiring terminals of the power semiconductor device 10.

[0072] It should be noted that the power semiconductor device 10 includes: a gate, a source and a drain, wherein the gate is the input terminal of the power semiconductor device 10 , the source is the output terminal of the power semiconductor device 10 , and the drain is the control terminal of the power semiconductor device 10 .

[0073] The output end of the electrical signal sampling circuit 20 is connected to the control unit 30 to obtain the wiring electrical signal of the electrical signal sampling circuit 20. The control unit 30 can be a microcontroller unit (MCU). The control unit 30 determines the health status of different dimensions of the power semiconductor device 10 according to different wiring electrical signals.

[0074] The control unit 30 pre-sets corresponding electrical signal thresholds for different wiring electrical signals, so as to determine the health status of the power semiconductor device 10 in the target dimension according to the wiring electrical signals and the corresponding electrical signal thresholds.

[0075] In some embodiments, the control unit 30 directly controls the power semiconductor device 10 to disconnect when it determines that the health state of the power semiconductor device 10 in the target dimension is unhealthy based on the health state of the power semiconductor device 10 in different dimensions, so as to avoid safety risks caused by the failure of the power semiconductor device 10.

[0076] In some other embodiments, the state detection method may further include:

[0077] According to the health status of the power semiconductor device, abnormal prompt information of the power semiconductor device is sent, so that the user can control the working state of the solid-state circuit breaker according to the health status prompt information.

[0078] Please refer to Figure 3 , which is the principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 2 ,like Figure 3As shown, the control unit 30 is also connected to the communication module 40 through the communication interface. When it is determined that the health status of the power semiconductor device 10 in the target dimension is unhealthy, the abnormal prompt information of the corresponding dimension is uploaded through the communication module 40, so that after the user receives the abnormal prompt information of the corresponding dimension through the communication module 40, the communication module 40 sends a control instruction to the control unit 30, and the control unit 30 controls the power semiconductor device 10 to disconnect according to the control instruction.

[0079] In one possible implementation, Figure 3 As shown, the solid-state circuit breaker further includes: a flux converter 50 and an isolating switch 60, wherein the input end of the flux converter 50 is connected to the control unit 30, and the output end of the flux converter 50 is connected to the control end of the isolating switch 60, and the isolating switch 60 is connected between the preset power module and the circuit where the external load is located. For example, the isolating switch 60 can be connected between the preset power module and the power semiconductor device 10, or between the power semiconductor device 10 and the external load. Figure 2 The example in which the isolating switch 60 is connected between the preset power module and the power semiconductor device 10 is used for description.

[0080] After the control unit 30 sends the abnormal prompt information of the power semiconductor device to the user through the communication module 40, the user can determine whether it is necessary to control the power semiconductor device to disconnect and open the solid-state circuit breaker according to the abnormality of the power semiconductor device. If the abnormality of the power semiconductor device indicates that the power semiconductor device cannot work normally, the user sends an instruction to control the disconnection of the isolating switch 60 to the control unit 30 through the communication module 40 to disconnect the input and output of the solid-state circuit breaker and realize the opening of the solid-state circuit breaker.

[0081] The solid-state circuit breaker and state detection method provided in the above embodiments samples the wiring electrical signal of the preset wiring terminal of the power semiconductor device through the electrical signal sampling circuit. The control unit can determine the health status of the corresponding dimension of the power semiconductor device according to the wiring electrical signal, and control the on and off state of the power semiconductor device to ensure the safety of the solid-state circuit breaker and avoid safety risks of the solid-state circuit breaker caused by health problems of the power semiconductor device.

[0082] In one possible implementation, see Figure 4 , which is the principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 3 ,like Figure 4 As shown, the electrical signal sampling circuit 20 includes: an incoming voltage sampling circuit 211 and an outgoing voltage sampling circuit 212 .

[0083] Among them, the input end of the incoming line voltage sampling circuit 211 is connected to the incoming line end of the power semiconductor device 10 to detect the incoming line voltage signal of the power semiconductor device 10, and the input end of the outgoing line voltage sampling circuit 212 is connected to the outgoing line end of the power semiconductor device 10 to detect the outgoing line voltage signal of the power semiconductor device 10.

[0084] based on Figure 4 The solid-state circuit breaker shown, the embodiment of the present application also provides a state detection method of the solid-state circuit breaker.

[0085] Please refer to Figure 5 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 2 ,like Figure 5 As shown, the above S10 acquires the wiring electrical signal of the power semiconductor device sampled by the electrical signal sampling circuit, which may include:

[0086] S201: Controlling the power semiconductor device to switch between on and off states according to a driving voltage signal of the power semiconductor device.

[0087] S203: Acquire an incoming line voltage signal after the power semiconductor device is switched between on and off states, sampled by an incoming line voltage sampling circuit. The wiring electrical signal includes: an incoming line voltage signal.

[0088] S203: Acquire an output voltage signal of the power semiconductor device sampled by the output voltage sampling circuit after the on-off state is switched, where the wiring electrical signal also includes: an output voltage signal.

[0089] The above S20 determines the health status of the power semiconductor device according to the wiring electrical signal, which may include:

[0090] S204: Determine the on / off health status of the power semiconductor device according to the incoming line voltage signal and the outgoing line voltage signal.

[0091] In this embodiment, the control unit 30 sends a pulse drive signal to the power semiconductor device 10 according to the drive voltage signal provided by the power semiconductor device 10, wherein the drive voltage signal and the pulse drive signal are opposite signals to each other, so that the power semiconductor device 10 switches the on-off state according to the drive voltage signal and the pulse drive signal.

[0092] The incoming line voltage sampling circuit 211 samples the incoming line voltage signal of the power semiconductor device 10 after the on-off state is switched, and the outgoing line voltage sampling circuit 212 samples the outgoing line voltage signal of the power semiconductor device 10 after the on-off state is switched. The output end of the incoming line voltage sampling circuit 211 is connected to the first voltage input end of the control unit 30, and the output end of the outgoing line voltage sampling circuit 212 is connected to the second voltage input end of the control unit 30. The control unit 30 calculates the incoming line and outgoing line voltage difference based on the incoming line voltage signal and the outgoing line voltage signal after the on-off state is switched, so as to judge whether the on-off health state of the power semiconductor device 10 is healthy based on the incoming line and outgoing line voltage difference.

[0093] In some embodiments, if the driving voltage signal is a high-level signal, the power semiconductor device 10 is in the on state, and the control unit 30 sends a pulsed low-level driving signal to the power semiconductor device 10 to control the power semiconductor device 10 to switch to the off state within a preset time period. The control unit 30 determines whether the input and output line voltage difference meets the voltage difference threshold when the power semiconductor device 10 is normally disconnected based on the input line voltage signal and the output line voltage signal of the power semiconductor device 10 in the off state, so as to determine whether the disconnection health state of the power semiconductor device 10 is healthy.

[0094] Among them, if the input and output line voltage difference is within the voltage difference threshold range when the power semiconductor device 10 is normally disconnected, the disconnection health state of the power semiconductor device 10 is determined to be healthy, that is, the power semiconductor device 10 can be disconnected normally; if the input and output line voltage difference is not within the voltage difference threshold range when the power semiconductor device 10 is normally disconnected, the disconnection health state of the power semiconductor device 10 is determined to be unhealthy, that is, the power semiconductor device 10 cannot be disconnected normally.

[0095] In other embodiments, if the driving voltage signal is a low-level signal, the power semiconductor device 10 is in the disconnected state, and the control unit sends a pulsed high-level driving signal to the power semiconductor device 10 to control the power semiconductor device 10 to switch to the on state within a preset time period. The control unit 30 determines whether the input and output line voltage difference meets the voltage difference threshold when the power semiconductor device 10 is normally turned on based on the input line voltage signal and the output line voltage signal of the power semiconductor device 10 in the on state, so as to determine whether the on-state health state of the power semiconductor device 10 is healthy.

[0096] Among them, if the input and output line voltage difference is within the voltage difference threshold range when the power semiconductor device 10 is normally turned on, the conduction health state of the power semiconductor device 10 is determined to be healthy, that is, the power semiconductor device 10 can be turned on normally; otherwise, if the input and output line voltage difference is not within the voltage difference threshold range when the power semiconductor device 10 is normally turned on, the conduction health state of the power semiconductor device 10 is determined to be unhealthy, that is, the power semiconductor device 10 cannot be turned on normally.

[0097] The solid-state circuit breaker and state detection method provided in the above-mentioned embodiments samples the incoming line voltage signal after the on-off state of the power semiconductor device is switched through the incoming line voltage sampling circuit, and samples the outgoing line voltage signal after the on-off state of the power semiconductor device is switched through the outgoing line voltage sampling circuit, so as to determine whether the power semiconductor device can be switched normally according to the incoming line voltage signal and the outgoing line voltage signal, so as to ensure that the solid-state circuit breaker works when the power semiconductor device can be switched normally, and avoid safety risks caused by the inability of the power semiconductor device to be switched normally.

[0098] Please refer to Figure 6 , which is the principle of the solid-state circuit breaker provided in the embodiment of the present application Figure 4 ,like Figure 6 As shown, the electrical signal sampling circuit 20 also includes: a current sampling circuit 23, the input end of the current sampling circuit 23 is connected to the incoming line end of the power semiconductor device 10, and is used to detect the incoming line current signal of the power semiconductor device 10. The wiring electrical signal also includes: an incoming line current signal.

[0099] based on Figure 6 The solid-state circuit breaker shown, the embodiment of the present application also provides a state detection method of the solid-state circuit breaker.

[0100] Please refer to Figure 7 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 3 ,like Figure 7 As shown, the above S10 acquires the wiring electrical signal of the power semiconductor device sampled by the electrical signal sampling circuit, which may include:

[0101] S301: Acquire an incoming current signal of a power semiconductor device sampled by a current sampling circuit.

[0102] S302: Calculate the on-resistance of the power semiconductor device according to the incoming line voltage signal, the outgoing line voltage signal and the incoming line current signal.

[0103] The above S20 determines the health status of the power semiconductor device according to the wiring electrical signal, which may include:

[0104] S303: Determine an on-resistance health state of the power semiconductor device according to the on-resistance, where the on-resistance health state is used to indicate whether the power semiconductor device meets a preset device loss condition.

[0105] In this embodiment, the preset device loss condition may be whether the on-resistance of the power semiconductor device 10 is within a resistance threshold range.

[0106] The current sampling circuit 23 is used to sample the incoming current signal of the power semiconductor device 10. The output end of the current sampling circuit 23 is connected to the power input end of the control unit 30. The control unit 30 calculates the on-resistance of the power semiconductor device 10 based on the incoming voltage signal, the outgoing voltage signal and the incoming current signal of the power semiconductor device 10 in the on state, and determines whether the on-resistance of the power semiconductor device 10 is within the resistance threshold range. If the on-resistance is within the resistance threshold range, it is determined that the on-resistance of the power semiconductor device 10 is in a healthy state; if the on-resistance is not within the resistance threshold range, it is determined that the on-resistance of the power semiconductor device 10 is in an unhealthy state.

[0107] Among them, the unhealthy state can indicate that the power semiconductor device 10 is worn out or damaged, and whether the power semiconductor device is worn out or damaged can be determined based on the resistance value of the on-resistance, wherein the on-resistance of a power semiconductor device with wear is smaller than the on-resistance of a damaged power semiconductor device.

[0108] The solid-state circuit breaker and state detection method provided in the above embodiments, by setting a current sampling circuit at the incoming end of the power semiconductor device to sample the incoming current signal of the power semiconductor device, the control unit can calculate the on-resistance of the power semiconductor device according to the incoming voltage signal, the outgoing voltage signal and the incoming current signal of the power semiconductor device in the on state, thereby determining whether the power semiconductor device is normal according to the on-resistance, thereby avoiding the solid-state circuit breaker from being unable to work normally due to loss or damage of the power semiconductor device, thereby avoiding the safety risk of the solid-state circuit breaker.

[0109] In one possible implementation, Figure 6 As shown, the solid-state circuit breaker further includes: a temperature sampling circuit 70 whose distance to the power semiconductor device 10 is within a preset distance range; the temperature sampling circuit 70 is also connected to the control unit 30 .

[0110] Please refer to Figure 8 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 4 ,like Figure 8 As shown, the method may also include:

[0111] S401: Acquire an operating temperature signal of a power semiconductor device sampled by a temperature sampling circuit.

[0112] S402: Determine a temperature health status of the power semiconductor device according to the operating temperature signal, where the temperature health status is used to indicate whether the power semiconductor device meets a preset operating temperature condition.

[0113] In this embodiment, the preset operating temperature condition may be whether the operating temperature of the power semiconductor device 10 is within a temperature threshold range. The temperature sampling circuit 70 is arranged within a preset distance range of the power semiconductor device 10, and is used to sample the operating temperature of the power semiconductor device 10. The control unit 30 determines whether the operating temperature of the power semiconductor device 10 is within the temperature threshold range, and determines whether the power semiconductor device 10 has a temperature anomaly. If the operating temperature of the power semiconductor device is within the temperature threshold range, it is determined that the power semiconductor device 10 has a temperature anomaly; otherwise, it is determined that the power semiconductor device 10 does not have a temperature anomaly.

[0114] The solid-state circuit breaker and state detection method provided in the above embodiments determine whether the power semiconductor device is overheated according to the operating temperature of the power semiconductor device, thereby avoiding damage to the power semiconductor device due to overheating of the power semiconductor device and ensuring the safety of the solid-state circuit breaker.

[0115] In one possible implementation, see Fig. 9 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 5 ,like Fig. 9 As shown, the method may also include:

[0116] S501: Acquire a driving voltage signal of a power semiconductor device.

[0117] S502: Determine a driving health state of the power semiconductor device according to the driving voltage signal, where the driving health state is used to indicate whether the driving voltage signal of the power semiconductor device meets a preset driving condition.

[0118] In this embodiment, the preset driving condition may be whether the driving voltage of the power semiconductor device is within the driving voltage threshold range. In addition to determining the health status of the power semiconductor device 10 in the target dimension based on the wiring electrical signal, the control unit 30 may provide a driving voltage signal to the power semiconductor device 10 to drive the power semiconductor device 10 to conduct, wherein the control unit 30 may determine whether the driving voltage signal provided to the power semiconductor device is within the driving voltage threshold range to determine whether the driving state of the power semiconductor device 10 is normal. If the driving voltage signal is within the driving voltage threshold range, it is determined that the driving state of the power semiconductor device 10 is normal; if the driving voltage signal is not within the driving voltage threshold range, it is determined that the driving state of the power semiconductor device 10 is abnormal.

[0119] The solid-state circuit breaker and state detection method provided in the above embodiments determine whether the power semiconductor device can be driven normally by judging whether the driving voltage signal of the power semiconductor device is within the driving voltage threshold range, thereby ensuring that the solid-state circuit breaker can work normally.

[0120] For the status detection method provided by any of the above embodiments, please refer to Fig.10 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 1 ,like Fig.10 As shown, the control unit can calculate the driving health status, on-off health status, on-resistance health status and temperature health status of the power semiconductor device respectively. When the health status of any dimension is unhealthy, it is determined that the power semiconductor device is abnormal. The control unit reports the abnormal prompt information through the communication module, so that the user can send a control instruction to the control unit according to the abnormal prompt information to control the solid-state circuit breaker to close or open the switch. Among them, the control unit includes a storage module for storing the abnormal prompt information to avoid the abnormal prompt information from being lost due to communication failure.

[0121] Based on the above embodiments, the present application also provides a state detection method. Fig.11 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 6 ,like Fig.11 As shown, the process of determining the health status of the power semiconductor device in the above S20 may include:

[0122] S601: If each sampling signal is not within the corresponding signal threshold range, count the anomalies corresponding to each sampling signal.

[0123] S602: Determine the health status of the power semiconductor device according to the continuous cumulative count of the abnormal count.

[0124] In this embodiment, in order to ensure accurate judgment of the health status of the power semiconductor device, the health status of each dimension of the power semiconductor device can be tested multiple times. When the results of multiple consecutive tests are not within the corresponding signal threshold range, the health status of the power semiconductor device is determined to be unhealthy.

[0125] In some embodiments, please refer to Fig.12 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 2 ,like Fig.12 As shown, the process of the control unit detecting the driving health state of the power semiconductor device may include: the control unit obtains the driving voltage signal of the power semiconductor device, and determines whether the driving voltage signal is within the driving voltage threshold range.

[0126] If the driving voltage signal is not within the driving voltage threshold range, the count number of the driving voltage abnormality counter is increased by 1. When the count number of the driving voltage abnormality counter is greater than the preset number, it is determined that the driving state of the power semiconductor device is unhealthy; when the count number of the driving voltage abnormality counter is less than or equal to the preset number, the detection cycle is entered; if the driving voltage signal is within the driving voltage threshold range, the count number of the driving voltage abnormality counter is cleared. The preset number can be set as needed, for example, it can be 3 times.

[0127] In some embodiments, please refer to Fig.13 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 3 ,like Fig.13 As shown, the process of the control unit detecting the on-off health state of the power semiconductor device may include: the control unit obtains the driving voltage signal of the power semiconductor device, determines whether the driving voltage is at a high level, and if the driving voltage is at a high level, sends a pulse low-level driving signal to make the power semiconductor device switch from the on state to the off state briefly and then switch back to the on state; if the driving voltage is at a low level, sends a pulse high-level driving signal to make the power semiconductor device switch from the off state to the on state briefly and then switch back to the off state; obtains the incoming line voltage signal and the outgoing line voltage signal of the power semiconductor device before and after the on-off state switching, and determines whether the incoming and outgoing line voltage difference is within the voltage difference threshold range.

[0128] If the voltage difference between the input and output lines is not within the voltage difference threshold range, the count number of the on-off abnormality counter is increased by 1. When the count number of the on-off abnormality counter is greater than the preset number, it is determined that the on-off state of the power semiconductor device is unhealthy; when the count number of the on-off abnormality counter is less than or equal to the preset number, the detection cycle is entered; if the voltage between the input and output lines is within the voltage difference threshold range, the count number of the on-off abnormality counter is cleared.

[0129] In some embodiments, please refer to Fig.14 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 4 ,like Fig.14 As shown, the process of the control unit detecting the on-resistance health status of the power semiconductor device may include: the control unit obtains the incoming line voltage signal, the outgoing line voltage signal and the incoming line current signal of the power semiconductor device, calculates the on-resistance Rds of the power semiconductor device according to Ohm's law R=U / I, and determines whether the on-resistance of the power semiconductor device is within the resistance threshold range.

[0130] If the on-resistance is not within the resistance threshold range, the count number of the on-resistance abnormality counter is increased by 1. When the count number of the on-resistance abnormality counter is greater than the preset number, it is determined that the on-resistance state of the power semiconductor device is unhealthy; when the count number of the on-resistance abnormality counter is less than or equal to the preset number, the detection loop is entered; if the on-resistance is within the resistance threshold range, the count number of the on-resistance abnormality counter is cleared.

[0131] In some embodiments, please refer to Fig.15 , which is a flow chart of the state detection method provided in the embodiment of the present application Figure 5 ,like Fig.15 As shown, the process of the control unit detecting the temperature health status of the power semiconductor device may include: the control unit obtains the operating temperature signal of the power semiconductor device and determines whether the operating temperature is within a temperature threshold range.

[0132] If the operating temperature is not within the temperature threshold range, the count number of the temperature anomaly counter is increased by 1. When the count number of the temperature anomaly counter is greater than the preset number, it is determined that the operating temperature of the power semiconductor device is unhealthy; when the count number of the temperature anomaly counter is less than or equal to the preset number, the detection loop is entered; if the operating temperature is within the temperature threshold range, the count number of the temperature anomaly counter is cleared.

[0133] The solid-state circuit breaker and state detection method provided in the above embodiments detects the driving state, on-off state, on-resistance state and temperature state of the power semiconductor device in the solid-state circuit breaker to determine whether each state of the power semiconductor device is healthy, thereby ensuring that the fault problem of the solid-state circuit breaker can be discovered and fed back in time, avoiding more serious accidents and high maintenance costs in the application environment due to the fault of the solid-state circuit breaker, and ensuring the safety of the solid-state circuit breaker and the application environment.

[0134] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A solid-state circuit breaker, characterized in that: The solid-state circuit breaker comprises: a power semiconductor device, an electrical signal sampling circuit and a control unit; The power semiconductor device is used to be connected between a preset power supply module and a loop where an external load is located; The input end of the electrical signal sampling circuit is connected to the preset wiring terminal of the power semiconductor device to detect the wiring electrical signal of the power semiconductor device; The control unit is connected to the control terminal of the power semiconductor device and is used to provide a driving voltage signal for the power semiconductor device; The control unit is also connected to the output end of the electrical signal sampling circuit, and is used to determine the health status of the power semiconductor device according to the wiring electrical signal.

2. The solid-state circuit breaker according to claim 1, characterized in that The electrical signal sampling circuit comprises: an incoming line voltage sampling circuit and an outgoing line voltage sampling circuit; The input end of the incoming line voltage sampling circuit is connected to the incoming line end of the power semiconductor device to detect the incoming line voltage signal of the power semiconductor device; The input end of the output voltage sampling circuit is connected to the output end of the power semiconductor device to detect the output voltage signal of the power semiconductor device. The wiring electrical signal includes: the input voltage signal and the output voltage signal.

3. The solid-state circuit breaker according to claim 2, characterized in that: The electrical signal sampling circuit also includes: a current sampling circuit, the input end of the current sampling circuit is connected to the incoming line end of the power semiconductor device, and is used to detect the incoming line current signal of the power semiconductor device. The wiring electrical signal also includes: the incoming line current signal.

4. The solid-state circuit breaker according to claim 1, characterized in that: The solid-state circuit breaker further comprises: a temperature sampling circuit whose distance from the power semiconductor device is within a preset distance range; the temperature sampling circuit is also connected to the control unit.

5. A state detection method for a solid-state circuit breaker, characterized in that: A control unit applied to a solid-state circuit breaker according to any one of claims 1 to 4, wherein the state detection method comprises: Acquire a wiring electrical signal of a power semiconductor device in the solid-state circuit breaker sampled by an electrical signal sampling circuit in the solid-state circuit breaker; The health status of the power semiconductor device is determined according to the wiring electrical signal.

6. The state detection method according to claim 5, characterized in that: If the electrical signal sampling circuit includes: an incoming line voltage sampling circuit and an outgoing line voltage sampling circuit; the acquisition of the wiring electrical signal of the power semiconductor device in the solid-state circuit breaker sampled by the electrical signal sampling circuit in the solid-state circuit breaker includes: Controlling the power semiconductor device to switch between on and off states according to a driving voltage signal of the power semiconductor device; Acquire the incoming line voltage signal of the power semiconductor device sampled by the incoming line voltage sampling circuit after the on-off state is switched, the wiring electrical signal includes: the incoming line voltage signal; Acquire the output line voltage signal of the power semiconductor device sampled by the output line voltage sampling circuit after the on-off state is switched, the wiring electrical signal further comprising: the output line voltage signal; Determining the health status of the power semiconductor device according to the wiring electrical signal includes: The on-off health state of the power semiconductor device is determined according to the incoming line voltage signal and the outgoing line voltage signal, and the on-off health state is used to indicate whether the power semiconductor device meets the corresponding on-off state under the drive of the control unit.

7. The state detection method according to claim 6, characterized in that: If the electrical signal sampling circuit further includes: a current sampling circuit; the method of obtaining the wiring electrical signal of the power semiconductor device sampled by the electrical signal sampling circuit further includes: Acquiring an incoming current signal of the power semiconductor device sampled by the current sampling circuit; Calculating the on-resistance of the power semiconductor device according to the incoming line voltage signal, the outgoing line voltage signal and the incoming line current signal; Determining the health status of the power semiconductor device according to the wiring electrical signal includes: An on-resistance health state of the power semiconductor device is determined based on the on-resistance, where the on-resistance health state is used to indicate whether the power semiconductor device meets a preset device loss condition.

8. The state detection method according to claim 5, characterized in that: If the solid-state circuit breaker further includes: a temperature sampling circuit whose distance from the power semiconductor device is within a preset distance range, the method further includes: Acquiring an operating temperature signal of the power semiconductor device sampled by the temperature sampling circuit; The temperature health status of the power semiconductor device is determined according to the operating temperature signal, and the temperature health status is used to indicate whether the power semiconductor device meets a preset operating temperature condition.

9. The state detection method according to claim 5, characterized in that: The method further comprises: Acquiring a driving voltage signal of the power semiconductor device; The driving health state of the power semiconductor device is determined according to the driving voltage signal, wherein the driving health state is used to indicate whether the driving voltage signal of the power semiconductor device meets a preset driving condition.

10. The state detection method according to any one of claims 6 to 9, characterized in that: Determining the health status of the power semiconductor device includes: If each sampling signal is not within the corresponding signal threshold range, counting the anomalies corresponding to each sampling signal; The health status of the power semiconductor device is determined according to the continuous cumulative count of the abnormal count.

11. The state detection method according to claim 5, characterized in that: The method further comprises: According to the health status of the power semiconductor device, abnormal prompt information of the power semiconductor device is sent, so that the user can control the working state of the solid-state circuit breaker according to the health status prompt information.

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