Semiconductor equipment gas conveying method and system

Abstract

The invention discloses a semiconductor equipment gas conveying method and system, and relates to the technical field of gas conveying, and the method comprises the following steps: obtaining same-distance purity line groups of all gases conveyed by semiconductor equipment based on a gas pipeline, and setting purity detection points in the gas pipeline based on the same-distance purity line groups, gas conveying is regulated and controlled based on the detection result of the purity detection point; the method is used for solving the problems that in an existing semiconductor equipment gas conveying method, only flow stability or fluid channeling of gas is considered, during actual conveying, the purity of conveyed gas is changed due to the influence of the flow speed of the gas in a gas conveying pipeline, and after stable gas without fluid channeling is introduced into a reaction cavity, the stable gas is not subjected to fluid channeling. And the quality of a semiconductor product is reduced due to non-uniform gas purity.

Description

Technical Field

[0001] The present invention relates to the field of gas delivery technology, and in particular to a semiconductor device gas delivery method and system. Background Art

[0002] Gas delivery for semiconductor equipment mainly involves the supply, purification, control and monitoring of gases to ensure the purity, stability and safety of gases required in the semiconductor manufacturing process. The differences between gas delivery for semiconductor equipment and other gas delivery include gas type and purpose, purity and control, pressure and temperature control, safety and danger, etc. In terms of purity and control, semiconductor equipment has extremely high requirements for gas purity, which usually needs to reach ppb or even lower levels to ensure the quality and stability of semiconductor products.

[0003] The existing method for gas delivery to semiconductor equipment usually involves setting up a recovery pipeline to recover the gas with unstable flow rate through the recovery pipeline, thereby ensuring that the gas introduced into the reaction chamber of the semiconductor equipment is gas with stable flow rate, thereby improving the quality of semiconductor products. In addition, the gas with unstable flow rate is reused to avoid waste. In actual application, this method can only control the gas transmission based on the gas flow rate. During actual transmission, the purity of the transmitted gas may change due to the influence of the gas flow rate in the gas transmission pipeline, resulting in a situation where the gas flow rate introduced into the reaction chamber is stable but the purity deviates. For example, in a patent application with publication number CN111826637A, a gas delivery system, semiconductor equipment and a gas delivery method are disclosed. The method is to use a first recovery pipeline and a recovery device to allow the process gas with unstable flow rate introduced into the air inlet pipeline to enter the recovery device, so that the recovery device dissolves or adsorbs the precursor in the process gas. In other methods for gas transmission in semiconductor equipment, the gas crossflow problem is usually improved. In actual experiments, semiconductor equipment has extremely high requirements for gas purity. If only the gas flow stability or crossflow problem is considered, the purity of the transmitted gas will change during actual transmission due to the influence of the gas flow rate in the gas transmission pipeline. After the stable gas without crossflow is introduced into the reaction chamber, the quality of the semiconductor product will still be reduced due to the uneven gas purity. In view of this, it is necessary to improve the existing method for gas transmission in semiconductor equipment. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems in the prior art to a certain extent. A method and system for gas delivery to semiconductor equipment is proposed to solve the problem that the existing method for gas delivery to semiconductor equipment only considers the flow stability or cross-flow of the gas. During actual transmission, the purity of the transmitted gas may change due to the influence of the gas flow rate in the gas transmission pipeline. After the stable gas without cross-flow is introduced into the reaction chamber, the quality of the semiconductor product may still be reduced due to the uneven gas purity.

[0005] To achieve the above objectives, in a first aspect, the present application provides a method for delivering gas to a semiconductor device, comprising the following steps: The pipeline used for gas delivery to semiconductor equipment is recorded as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment are obtained; When different gases are transported in semiconductor equipment, purity detection points are set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS; When the semiconductor device is delivering gas, a corresponding purity detection point is set based on the type of gas, and the gas delivery is regulated based on the detection results of the purity detection point.

[0006] Further, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment are obtained based on the gas pipeline, including: The material of the gas pipeline is recorded as the pipeline material, the pipeline with the largest diameter in the gas pipeline is obtained and recorded as the purity test pipeline, and the diameter of the inner wall of the pipeline is recorded as the inner wall length, wherein the purity test pipeline is a cylindrical pipeline, and the cross-section of the purity test pipeline is circular, and the length of the purity test pipeline is equal to the length of the longest gas pipeline during gas transmission of semiconductor equipment; All gases transmitted by semiconductor equipment are recorded as transmission gas CQ1 to transmission gas CQ h ; All transport gases CQ are analyzed using the purity analysis method.

[0007] Further, the purity analysis method includes: For any transmission gas CQ, the two ends of the purity test pipeline are respectively recorded as the test inlet and the test outlet, the minimum diameter of the sampling hole that can be sampled in the purity test pipeline is recorded as the sampling diameter, and the sampling hole with a diameter of the sampling hole equal to the sampling diameter is recorded as the minimum sampling hole; the length of the purity test pipeline is recorded as the pipeline length, and the value of the pipeline length divided by the sampling diameter is recorded as k; the maximum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as the rate SL max , the minimum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as rate SLmin , the rate at which the transmission gas CQ is normally transmitted in the semiconductor device is recorded as rate SL nor , where the rate SL nor is less than or equal to the rate SL max and greater than or equal to the rate SL min The value of Take any line on the inner wall of the purity test pipe that is perpendicular to the cross section of the purity test pipe and has a length equal to the length of the pipe, and record it as the test reference line. Take the line on the outer wall of the purity test pipe that is parallel to the test reference line and closest to the test reference line as the external reference line. The diameter of the cross section of the purity test pipe that is perpendicular to the test reference line is recorded as the test diameter.

[0008] Furthermore, the purity analysis method also includes: The external baseline is evenly divided into k parts, and based on the distance of each part from the test inlet, they are recorded as baseline sub-line JZ1 to baseline sub-line JZ from near to far. k ; For reference sub-line JZ1 to reference sub-line JZ k Any reference subline JZ k1 , the transmission gas CQ is introduced into the purity test pipeline through the test inlet, and the rate SL is the rate SL nor , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL nor When the purity test pipe is connected to the outer wall, the reference sub-line JZ k1 Open the minimum sampling hole for the diameter of the sampling hole, record the test diameter corresponding to the midpoint of the minimum sampling hole as the sampling diameter, sample gas from the minimum sampling hole to areas A, B and C within the sampling diameter, close the minimum sampling hole after sampling and conduct purity test on the sampled gas, and record the test results as conventional purity in area A, conventional purity in area B and conventional purity in area C, respectively, where area A is the area in the sampling diameter closest to the minimum sampling hole, area B is the midpoint area of ​​the sampling diameter, and area C is the area in the sampling diameter farthest from the minimum sampling hole.

[0009] Furthermore, the purity analysis method also includes: Adjust the rate of gas CQ transported in the purity test pipeline to rate SL max , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL max When the minimum sampling hole is opened, gas sampling is performed again in the A area, the B area and the C area within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the high-speed purity of the A area, the high-speed purity of the B area and the high-speed purity of the C area respectively. Adjust the rate of gas CQ transported in the purity test pipeline to rate SL min , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL min When the minimum sampling hole is opened, gas sampling is again carried out in areas A, B and C within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the low-speed purity of area A, the low-speed purity of area B and the low-speed purity of area C respectively.

[0010] Furthermore, the purity analysis method also includes: A plane rectangular coordinate system is established and recorded as the purity analysis coordinate system, wherein the unit of the X-axis of the purity analysis coordinate system is distance and the unit of the vertical axis is percentage; the distance from the midpoint of the reference sub-line JZk1 to the test inlet is recorded as L, and in the purity analysis coordinate system, the line connecting (L, low-speed purity in area A), (L, low-speed purity in area B) and (L, low-speed purity in area C) is recorded as the low-speed purity line DS. k1 The line connecting (L, conventional purity in area A), (L, conventional purity in area B) and (L, conventional purity in area C) is recorded as the conventional purity line CG. k1 ; The line connecting (L, A zone high speed purity), (L, B zone high speed purity) and (L, C zone high speed purity) is recorded as the high speed purity line GS k1 ; Based on the reference subline JZ k1 The analysis method is used for the reference sub-line JZ1 to the reference sub-line JZ k Perform analysis and draw all low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS in the purity analysis coordinate system; All low-speed purity lines DS, conventional purity lines CG, and high-speed purity lines GS corresponding to all transmission gases CQ are obtained.

[0011] Furthermore, when different gases are transported in a semiconductor device, purity detection points are set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG, and the high-speed purity line GS, including: For any transmission gas CQ, a group of low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS with the same ordinate are recorded as the same-distance purity line group; for any purity line group with the same abscissa L1 corresponding to the transmission gas CQ, when the low-speed purity of area B or the high-speed purity of area B is outside the conventional purity line CG, L1 is recorded as the optional detection distance; when the optional detection distance is obtained by analyzing all the purity line groups with the same distance corresponding to the transmission gas CQ, all optional detection distances are recorded as KX1 to KX pThe transmission gas CQ is recorded as the purity unstable gas; the gas pipeline is respectively from the gas inlet KX1 to KX p The point is marked as the purity detection point; For KX1 to KX p Any KX p1 , when the horizontal axis is KX p1 When only the low-speed purity of area B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the low-speed instability detection point; when the horizontal axis is KX p1 When only the high-speed purity of zone B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the high-speed instability detection point; when the horizontal axis is KX p1 When the corresponding purity line group with the same distance has high-speed purity in area B and low-speed purity in area B outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the speed instability detection point; When no optional detection distance is obtained when analyzing all purity line groups with the same distance corresponding to the transmission gas CQ, the transmission gas CQ is recorded as a purity-stable gas; All transmission gas CQs are analyzed and recorded as purity stable gases or purity detection points of transmission gas CQs are obtained.

[0012] Furthermore, when the semiconductor device is delivering gas, setting corresponding purity detection points based on the type of gas, and regulating the gas delivery based on the detection results of the purity detection points include: When the semiconductor equipment is transporting gas, the transported gas is recorded as the transported gas, and when the transported gas is a gas with stable purity, the transported gas is transported normally; When the transported gas is not recorded as purity-stable gas, the purity of the transported gas before transport is recorded as the rated purity, and the transport rate of the transported gas in the gas pipeline is obtained and recorded as the real-time rate; when the real-time rate changes, the transported gas in the gas pipeline is sampled at regular intervals at the variable speed unstable detection point corresponding to the transported gas. When the purity of the sampled transported gas is not equal to the rated purity, the gas transport is stopped and the purity of the transported gas is tested.

[0013] Furthermore, when the semiconductor device is delivering gas, setting corresponding purity detection points based on the type of gas, and regulating the gas delivery based on the detection results of the purity detection points also includes: When the real-time rate is greater than the rate SL norWhen the purity of the transported gas obtained by sampling is not equal to the rated purity, the gas delivery is stopped and the purity of the transported gas is tested; When the real-time rate is less than the rate SL nor When the purity of the sampled transport gas is not equal to the rated purity, the gas delivery is stopped and the purity of the transport gas is tested.

[0014] In a second aspect, a semiconductor equipment gas delivery system includes a delivery purity analysis module, a delivery detection acquisition module, and a delivery purity detection module; The transport purity analysis module records the pipeline used for gas transport of semiconductor equipment as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transported by the semiconductor equipment are obtained; The transport detection acquisition module is used to set purity detection points in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS when different gases are transported in the semiconductor equipment; The delivery purity detection module is used to set corresponding purity detection points based on the type of gas when the semiconductor equipment is delivering gas, and to regulate the gas delivery based on the detection results of the purity detection points.

[0015] Beneficial effects of the present invention: The present invention firstly records the pipeline used for gas transportation of semiconductor equipment as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment are obtained. The advantage of this is that by obtaining the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases, the gas purity at different positions in the gas pipeline during stable transmission at different gas transmission speeds can be obtained, which is helpful to perform purity detection on the position where the gas purity changes greatly during actual gas transmission, thereby ensuring that the purity of the gas entering the reaction chamber meets the production standard; The present invention also sets purity detection points in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS when different gases are transported in the semiconductor equipment. Finally, when the semiconductor equipment performs gas transportation, corresponding purity detection points are set based on the type of gas, and the gas transportation is regulated based on the detection results of the purity detection points. The advantage of this is that by setting purity detection points based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS, it is helpful to sample and detect the gas purity at the position where the gas purity changes greatly in the gas pipeline based on the gas transmission rate during actual gas transmission, thereby ensuring that the purity of the gas entering the reaction chamber meets the production standards while reducing the sampling cost and reducing the impact of sampling on gas transmission, thereby preventing the quality of semiconductor products from being reduced due to uneven gas purity. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a functional block diagram of the system of the present invention; Figure 2 is a schematic diagram of a purity testing pipeline of the present invention; Figure 3 is a flow chart of the steps of the method of the present invention; Figure 4 It is a schematic structural diagram of the electronic device of the present invention. DETAILED DESCRIPTION

[0017] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0018] Example 1, first aspect, please refer to Figure 1 As shown, the present application provides a semiconductor equipment gas delivery system, including a delivery purity analysis module, a delivery detection acquisition module, and a delivery purity detection module; The transport purity analysis module records the pipeline used for gas transport of semiconductor equipment as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment are obtained; the transport purity analysis module includes a transport purity analysis unit, and the transport purity analysis unit is configured with a transport gas purity analysis strategy, and the transport gas purity analysis strategy includes: The material of the gas pipeline is recorded as the pipeline material, the pipeline with the largest diameter in the gas pipeline is obtained and recorded as the purity test pipeline, and the diameter of the inner wall of the pipeline is recorded as the inner wall length, wherein the purity test pipeline is a cylindrical pipeline, and the cross-section of the purity test pipeline is circular, and the length of the purity test pipeline is equal to the length of the longest gas pipeline during gas transmission in the semiconductor device; in this embodiment, the pipeline material is set to PFA pipe, and in specific implementation, the pipeline material can be set according to the material of the gas pipeline used for gas transmission in the actual semiconductor device; by obtaining the pipeline with the largest diameter, it is helpful to facilitate the opening of the sampling hole and the detection of gas purity in subsequent analysis; All gases transmitted by semiconductor equipment are recorded as transmission gas CQ1 to transmission gas CQ h ; Use the purity analysis method to analyze all transmission gases CQ; In specific implementation, the transmission gas CQ can be silane, phosphine, arsine, borane and other gases. Since semiconductor equipment has extremely high requirements for gas purity, it should be ensured that the purity of the gas will not change significantly during the gas transmission of semiconductor equipment, so as to ensure that the quality of semiconductor components produced using the gas is higher; The purity analysis method includes: For any transmission gas CQ, the two ends of the purity test pipeline are respectively recorded as the test inlet and the test outlet, the minimum diameter of the sampling hole that can be sampled in the purity test pipeline is recorded as the sampling diameter, and the sampling hole with a diameter of the sampling hole equal to the sampling diameter is recorded as the minimum sampling hole; the length of the purity test pipeline is recorded as the pipeline length, and the value of the pipeline length divided by the sampling diameter is recorded as k; the maximum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as the rate SL max , the minimum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as rate SL min , the rate at which the transmission gas CQ is normally transmitted in the semiconductor device is recorded as rate SL nor , where the rate SL nor is less than or equal to the rate SL max and greater than or equal to the rate SL min value; in specific implementation, the minimum diameter of the sampling hole can be 40mm, and the sampling diameter can be adjusted according to the purity test pipeline actually selected. For example, when the diameter of the purity test pipeline actually selected is small, a smaller length can be selected as the diameter of the minimum sampling hole. When the diameter of the purity test pipeline actually selected is large, a larger length can be selected as the diameter of the minimum sampling hole, so as to facilitate the sampling of the gas in the purity test pipeline during the gas transmission process; Take any line on the inner wall of the purity test pipe that is perpendicular to the cross section of the purity test pipe and has a length equal to the length of the pipe, record it as the test reference line, take the line on the outer wall of the purity test pipe that is parallel to the test reference line and closest to the test reference line as the external reference line, and take the diameter of the cross section of the purity test pipe that is perpendicular to the test reference line as the test diameter; in specific implementation, please refer to Figure 2 As shown, LL1 is the test reference line, GG1 is the purity test pipe, LL2 is the external reference line, GG2 is the cross-section of the purity test pipe, and LL3 is the test diameter.

[0019] The external baseline is evenly divided into k parts, and based on the distance of each part from the test inlet, they are recorded as baseline sub-line JZ1 to baseline sub-line JZ from near to far. k ; For reference sub-line JZ1 to reference sub-line JZ k Any reference subline JZ k1 , the transmission gas CQ is introduced into the purity test pipeline through the test inlet, and the rate SL is the rate SL nor , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL nor When the purity test pipe is connected to the outer wall, the reference sub-line JZ k1 A minimum sampling hole is opened for the diameter of the sampling hole, and the test diameter corresponding to the midpoint of the minimum sampling hole is recorded as the sampling diameter. Gas sampling is performed from the minimum sampling hole to the A area, the B area and the C area within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the conventional purity of the A area, the conventional purity of the B area and the conventional purity of the C area, respectively, wherein the A area is the area closest to the minimum sampling hole in the sampling diameter, the B area is the midpoint area of ​​the sampling diameter, and the C area is the area farthest from the minimum sampling hole in the sampling diameter. In specific implementation, the purpose of segmenting the external baseline is to obtain the area where the gas can be sampled at different distances from the test inlet in the purity test pipeline, so as to obtain the purity distribution data of the gas in the purity test pipeline. Therefore, the more the purity test pipeline is segmented, the more accurate the data obtained. In actual situations, the segmentation of the external baseline can be adjusted according to the area where sampling can be performed on the actual purity test pipeline. For example, in one sampling, the baseline sub-line JZ k1 The length is 40mm, then the reference sub-line JZ is located outside the purity test pipe. k1 A minimum sampling hole with a diameter of 40 mm was opened at the location, and gas sampling was carried out in areas A, B and C in the test diameter corresponding to the midpoint of the minimum sampling hole. The test results obtained after the test were 99.9%, 99.8% and 99.9% respectively; Adjust the rate of gas CQ transported in the purity test pipeline to rate SL max , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL max When the minimum sampling hole is opened, gas sampling is performed again in the A area, the B area and the C area within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the high-speed purity of the A area, the high-speed purity of the B area and the high-speed purity of the C area respectively. Adjust the rate of gas CQ transported in the purity test pipeline to rate SL min , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL min When the minimum sampling hole is opened, gas sampling is performed again in areas A, B and C within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested, and the test results are recorded as low-speed purity of area A, low-speed purity of area B and low-speed purity of area C respectively. In the specific implementation process, since the positions where the purity of the gas in the purity test pipeline fluctuates at different gas transmission rates are not necessarily the same, purity sampling of the gas in the purity test pipeline at different transmission rates can provide data support at different rates for subsequent adjustments in the actual gas transmission process, thereby making the regulation of gas transmission of semiconductor equipment more accurate. A plane rectangular coordinate system is established and recorded as the purity analysis coordinate system, wherein the unit of the X-axis of the purity analysis coordinate system is distance and the unit of the vertical axis is percentage; the distance from the midpoint of the reference sub-line JZk1 to the test inlet is recorded as L, and in the purity analysis coordinate system, the line connecting (L, low-speed purity in area A), (L, low-speed purity in area B) and (L, low-speed purity in area C) is recorded as the low-speed purity line DS. k1 The line connecting (L, conventional purity in area A), (L, conventional purity in area B) and (L, conventional purity in area C) is recorded as the conventional purity line CG. k1 ; The line connecting (L, A zone high speed purity), (L, B zone high speed purity) and (L, C zone high speed purity) is recorded as the high speed purity line GS k1 ; Based on the reference subline JZ k1 The analysis method is used for the reference sub-line JZ1 to the reference sub-line JZ kAnalyze and draw all the low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS in the purity analysis coordinate system; in the specific implementation process, by obtaining the low-speed purity line DS, conventional purity line CG and high-speed purity line GS, the change of gas purity in the purity test pipeline at different transmission rates can be obtained. When the interval of gas purity at transmission rate A and the interval of gas purity at transmission rate B at the same position of the purity test pipeline vary greatly, it means that at this position, the purity of the gas is greatly affected by the transmission rate, resulting in the purity of the gas at transmission rate A or transmission rate B being lower than the actual required purity. Therefore, during actual gas transmission, the gas purity should be detected at this position when the gas transmission rate changes, so as to ensure that the purity of the transmitted gas meets the standard; All low-speed purity lines DS, conventional purity lines CG, and high-speed purity lines GS corresponding to all transmission gases CQ are obtained.

[0020] The transport detection acquisition module is used to set purity detection points in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS when different gases are transported in the semiconductor equipment; the transport detection acquisition module includes a purity detection point acquisition unit, and the purity detection point acquisition unit is configured with a purity detection point acquisition strategy, and the purity detection point acquisition strategy includes: For any transmission gas CQ, a group of low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS with the same ordinate are recorded as the same-distance purity line group; for any purity line group with the same abscissa L1 corresponding to the transmission gas CQ, when the low-speed purity of area B or the high-speed purity of area B is outside the conventional purity line CG, L1 is recorded as the optional detection distance; when the optional detection distance is obtained by analyzing all the purity line groups with the same distance corresponding to the transmission gas CQ, all optional detection distances are recorded as KX1 to KX p The transmission gas CQ is recorded as the purity unstable gas; the gas pipeline is respectively from the gas inlet KX1 to KX p The point is recorded as the purity detection point; in the specific implementation, L1 is recorded as the standard of the optional detection distance, which can be changed according to the actual allowable range of change in the purity of the gas, such as using other points of the low-speed purity line DS or the high-speed purity line GS to compare with the conventional purity line CG; for example, in one test, the highest point and the lowest point of the ordinate in the conventional purity line CG of the transmission gas CQ are 99.99% and 99.9% respectively, the low-speed purity of area B is 99.8%, and the high-speed purity of area B is 99.99%. It can be analyzed that the low-speed purity of area B is outside the conventional purity line CG. According to the judgment standard of this embodiment, it can be obtained that the transmission gas CQ should be recorded as a gas with unstable purity; For KX1 to KX p Any KXp1 , when the horizontal axis is KX p1 When only the low-speed purity of area B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the low-speed instability detection point; when the horizontal axis is KX p1 When only the high-speed purity of zone B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the high-speed instability detection point; when the horizontal axis is KX p1 When the corresponding purity line group with the same distance has high-speed purity in area B and low-speed purity in area B outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the speed instability detection point; When no optional detection distance is obtained when analyzing all purity line groups with the same distance corresponding to the transmission gas CQ, the transmission gas CQ is recorded as a purity-stable gas; in the specific implementation process, after analyzing all purity line groups with the same distance of the transmission gas CQ as described above, all transmission gas CQs that are not recorded as purity-stable gases contain corresponding purity detection points; All transmission gas CQs are analyzed and recorded as purity stable gases or purity detection points of transmission gas CQs are obtained.

[0021] The delivery purity detection module is used to set corresponding purity detection points based on the type of gas when the semiconductor device is delivering gas, and to regulate the gas delivery based on the detection results of the purity detection points; the delivery purity detection module includes a real-time purity detection unit, and the real-time purity detection unit is configured with a real-time purity monitoring strategy, and the real-time purity monitoring strategy includes: when the semiconductor device is delivering gas, the delivered gas is recorded as the delivery gas, and when the delivery gas is a purity-stable gas, the delivery gas is delivered normally; When the transported gas is not recorded as purity-stable gas, the purity of the transported gas before transport is recorded as the rated purity, the transport rate of the transported gas in the gas pipeline is obtained, and recorded as the real-time rate; when the real-time rate changes, the transported gas in the gas pipeline is sampled regularly at the variable speed unstable detection point corresponding to the transported gas, and when the purity of the sampled transported gas is not equal to the rated purity, the gas transport is stopped, and the purity of the transported gas is tested; in the specific implementation process, the variable speed unstable detection point, the low speed unstable detection point and the high speed unstable detection point correspond to the positions where the purity of the gas changes greatly when the transmission rate of the gas in the gas pipeline changes, the gas transmission rate is low, and the gas transmission rate is high, respectively. Therefore, the purity of the gas in the gas pipeline can be tested through the variable speed unstable detection point, the low speed unstable detection point and the high speed unstable detection point when the gas transmission rate changes, the gas transmission rate is low, and the gas transmission rate is high, so as to ensure that the purity of the transmitted gas meets the standard; When the real-time rate is greater than the rate SL nor When the purity of the transported gas obtained by sampling is not equal to the rated purity, the gas delivery is stopped and the purity of the transported gas is tested; When the real-time rate is less than the rate SL nor When the purity of the sampled transport gas is not equal to the rated purity, the gas delivery is stopped and the purity of the transport gas is tested.

[0022] Example 2, second aspect, please refer to Figure 2 As shown, the present application also provides a semiconductor device gas delivery method, comprising the following steps: Step S1, record the pipeline used for gas transportation of semiconductor equipment as gas pipeline; based on the gas pipeline, obtain the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment; Step S1 includes the following sub-steps: Step S101, record the material of the gas pipeline as pipeline material, obtain the pipeline with the largest diameter in the gas pipeline, record it as the purity test pipeline, and record the diameter of the inner wall of the pipeline as the inner wall length, wherein the purity test pipeline is a cylindrical pipeline, and the cross-section of the purity test pipeline is circular, and the length of the purity test pipeline is equal to the length of the longest gas pipeline when the semiconductor equipment transmits gas; Step S102: all gases transmitted by the semiconductor device are recorded as transmission gas CQ1 to transmission gas CQ h ; Use purity analysis methods to analyze all transmission gas CQ; purity analysis methods include: Step S1021, for any transmission gas CQ, the two ends of the purity test pipeline are respectively recorded as the test inlet and the test outlet, the minimum diameter of the sampling hole that can be sampled in the purity test pipeline is recorded as the sampling diameter, and the sampling hole with a diameter of the sampling hole equal to the sampling diameter is recorded as the minimum sampling hole; the length of the purity test pipeline is recorded as the pipeline length, and the value of the pipeline length divided by the sampling diameter is recorded as k; the maximum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as the rate SL max , the minimum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as rate SL min , the rate at which the transmission gas CQ is normally transmitted in the semiconductor device is recorded as rate SL nor , where the rate SL nor is less than or equal to the rate SL max and greater than or equal to the rate SL min The value of Step S1022, randomly select a line on the inner wall of the purity test pipe that is perpendicular to the cross section of the purity test pipe and has a length equal to the length of the pipe, and record it as a test reference line; record a line on the outer wall of the purity test pipe that is parallel to the test reference line and closest to the test reference line as an external reference line; record the diameter of the cross section of the purity test pipe that is perpendicular to the test reference line as a test diameter.

[0023] Step S1023, the external reference line is evenly divided into k parts, and based on the distance between each part and the test inlet, they are recorded as reference sub-lines JZ1 to JZ1 from near to far. k ; For reference sub-line JZ1 to reference sub-line JZ k Any reference subline JZ k1 , the transmission gas CQ is introduced into the purity test pipeline through the test inlet, and the rate SL is the rate SL nor , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL nor When the purity test pipe is connected to the outer wall, the reference sub-line JZ k1 Open the minimum sampling hole for the diameter of the sampling hole, record the test diameter corresponding to the midpoint of the minimum sampling hole as the sampling diameter, sample gas from the minimum sampling hole to the A area, B area and C area within the sampling diameter, close the minimum sampling hole after sampling and perform purity test on the sampled gas, and record the test results as the conventional purity of area A, the conventional purity of area B and the conventional purity of area C, respectively, where area A is the area closest to the minimum sampling hole in the sampling diameter, area B is the midpoint area of ​​the sampling diameter, and area C is the area farthest from the minimum sampling hole in the sampling diameter; Step S1024, adjusting the rate of gas CQ in the purity test pipeline to the rate SLmax , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL max When the minimum sampling hole is opened, gas sampling is performed again in the A area, the B area and the C area within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the high-speed purity of the A area, the high-speed purity of the B area and the high-speed purity of the C area respectively. Step S1025, adjusting the rate of gas CQ in the purity test pipeline to the rate SL min , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL min When the minimum sampling hole is opened, gas sampling is performed again in the A area, the B area and the C area within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the low-speed purity of the A area, the low-speed purity of the B area and the low-speed purity of the C area respectively. Step S1026, establish a plane rectangular coordinate system, recorded as the purity analysis coordinate system, wherein the unit of the X-axis of the purity analysis coordinate system is distance, and the unit of the vertical axis is percentage; the distance from the midpoint of the reference sub-line JZk1 to the test inlet is recorded as L, and in the purity analysis coordinate system, the line connecting (L, low-speed purity in area A), (L, low-speed purity in area B) and (L, low-speed purity in area C) is recorded as the low-speed purity line DS. k1 The line connecting (L, conventional purity in area A), (L, conventional purity in area B) and (L, conventional purity in area C) is recorded as the conventional purity line CG. k1 ; The line connecting (L, A zone high speed purity), (L, B zone high speed purity) and (L, C zone high speed purity) is recorded as the high speed purity line GS k1 ; Step S1027, based on the reference sub-line JZ k1 The analysis method is used for the reference sub-line JZ1 to the reference sub-line JZ k Perform analysis and draw all low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS in the purity analysis coordinate system; Step S1028, obtaining all low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS corresponding to all transmission gases CQ.

[0024] Step S2, when different gases are transported in the semiconductor device, purity detection points are set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS; Step S2 includes the following sub-steps: Step S201, for any transmission gas CQ, a group of low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS with the same vertical coordinates are recorded as a purity line group with the same distance; for any purity line group with the same horizontal coordinate L1 corresponding to the transmission gas CQ, when the low-speed purity of area B or the high-speed purity of area B is outside the conventional purity line CG, L1 is recorded as an optional detection distance; when the optional detection distances are obtained by analyzing all the purity line groups with the same distances corresponding to the transmission gas CQ, all the optional detection distances are recorded as KX1 to KX p The transmission gas CQ is recorded as the purity unstable gas; the gas pipeline is respectively from the gas inlet KX1 to KX p The point is marked as the purity detection point; Step S202, for KX1 to KX p Any KX p1 , when the horizontal axis is KX p1 When only the low-speed purity of area B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the low-speed instability detection point; when the horizontal axis is KX p1 When only the high-speed purity of zone B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the high-speed instability detection point; when the horizontal axis is KX p1 When the corresponding purity line group with the same distance has high-speed purity in area B and low-speed purity in area B outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the speed instability detection point; Step S203, when no optional detection distance is obtained when analyzing all purity line groups corresponding to the transmission gas CQ at the same distance, the transmission gas CQ is recorded as a purity-stable gas; Step S204: Analyze all transmission gases CQ and record all transmission gases CQ as purity-stable gases or obtain purity detection points of transmission gases CQ.

[0025] Step S3, when the semiconductor device is delivering gas, a corresponding purity detection point is set based on the type of gas, and the gas delivery is regulated based on the detection result of the purity detection point; Step S3 includes the following sub-steps: Step S301, when the semiconductor device performs gas delivery, the gas being delivered is recorded as delivery gas, and when the delivery gas is a purity-stable gas, the delivery gas is delivered normally; Step S302, when the transport gas is not recorded as purity-stable gas, the purity of the transport gas before transport is recorded as rated purity, the transport rate of the transport gas in the gas pipeline is obtained and recorded as the real-time rate; when the real-time rate changes, the transport gas in the gas pipeline is sampled at a timed speed instability detection point corresponding to the transport gas, and when the purity of the sampled transport gas is not equal to the rated purity, the gas transport is stopped, and the purity of the transport gas is detected; Step S303: When the real-time rate is greater than the rate SL nor When the purity of the transported gas obtained by sampling is not equal to the rated purity, the gas delivery is stopped and the purity of the transported gas is tested; Step S304: when the real-time rate is less than the rate SL nor When the purity of the sampled transport gas is not equal to the rated purity, the gas delivery is stopped and the purity of the transport gas is tested.

[0026] Example 3, please refer to Figure 4 As shown, Figure 4 The structural schematic diagram of an electronic device is illustrated, and the electronic device may include: a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other through the communication bus. The memory stores computer-readable instructions, and the processor can call the instructions in the memory. When the computer-readable instructions are executed by the processor, the steps in a semiconductor device gas delivery method are executed to achieve the following functions: first, the pipeline used for semiconductor device gas delivery is recorded as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor device are obtained, and then when different gases are transported in the semiconductor device, the purity detection point is set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS; finally, when the semiconductor device performs gas delivery, the corresponding purity detection point is set based on the type of gas, and the gas delivery is regulated based on the detection result of the purity detection point.

[0027] In addition, the logic instructions in the above-mentioned memory can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including several instructions to enable a computer device (which can be a personal computer, server, or network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0028] Embodiment 4, the present application also provides a computer-readable storage medium, the present application provides a storage medium, on which a computer program is stored. When the computer program is executed by the processor, the steps in the above semiconductor equipment gas delivery method are executed to achieve the following functions: first, the pipeline used for gas delivery to the semiconductor equipment is recorded as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment are obtained; then when different gases are transported in the semiconductor equipment, purity detection points are set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS; finally, when the semiconductor equipment performs gas delivery, corresponding purity detection points are set based on the type of gas, and the gas delivery is regulated based on the detection results of the purity detection points.

[0029] Through the description of the above implementation methods, the embodiments of the present invention can be provided as methods, systems or computer program products. Based on such an understanding, the above technical solutions can be essentially or partly contributed to the prior art in the form of software products, which can be stored in a computer-readable storage medium, such as ROM / RAM, a magnetic disk, an optical disk, etc., and include several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0030] In the embodiments provided in the present application, it should be understood that the disclosed system or method can be implemented in other ways. The embodiments described above are merely schematic. For example, the division of modules or units is only a logical function division. There may be other division methods in actual implementation. For example, multiple modules or units can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, and the indirect coupling or communication connection of systems, modules and units can be electrical, mechanical or other forms.

[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A method for delivering gas to semiconductor equipment, characterized in that: The steps include: The pipeline used for gas delivery to semiconductor equipment is recorded as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transmitted by the semiconductor equipment are obtained; When different gases are transported in semiconductor equipment, purity detection points are set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS; When the semiconductor equipment is delivering gas, a corresponding purity detection point is set based on the type of gas, and the gas delivery is regulated based on the detection results of the purity detection point; The low-speed purity line DS, conventional purity line CG and high-speed purity line GS for all gases transmitted by semiconductor equipment based on gas pipelines include: The material of the gas pipeline is recorded as the pipeline material, the pipeline with the largest diameter in the gas pipeline is obtained and recorded as the purity test pipeline, and the diameter of the inner wall of the pipeline is recorded as the inner wall length, wherein the purity test pipeline is a cylindrical pipeline, and the cross-section of the purity test pipeline is circular, and the length of the purity test pipeline is equal to the length of the longest gas pipeline during gas transmission of semiconductor equipment; All gases transmitted by semiconductor equipment are recorded as transmission gas CQ1 to transmission gas CQ h ; Analyze all transmission gases CQ using purity analysis methods; Characterized in that the purity analysis method comprises: For any transmission gas CQ, the two ends of the purity test pipeline are respectively recorded as the test inlet and the test outlet, the minimum diameter of the sampling hole that can be sampled in the purity test pipeline is recorded as the sampling diameter, and the sampling hole with a diameter of the sampling hole equal to the sampling diameter is recorded as the minimum sampling hole; the length of the purity test pipeline is recorded as the pipeline length, and the value of the pipeline length divided by the sampling diameter is recorded as k; the maximum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as the rate SL max , the minimum rate at which the transmission gas CQ can be transmitted in the semiconductor device is recorded as rate SL min , the rate at which the transmission gas CQ is normally transmitted in the semiconductor device is recorded as rate SL nor , where the rate SL nor is less than or equal to the rate SL max and greater than or equal to the rate SL min The value of Take any line on the inner wall of the purity test pipe that is perpendicular to the cross section of the purity test pipe and has a length equal to the length of the pipe, and record it as the test reference line. Take the line on the outer wall of the purity test pipe that is parallel to the test reference line and closest to the test reference line as the external reference line. The diameter of the cross section of the purity test pipe that is perpendicular to the test reference line is recorded as the test diameter.

2. A semiconductor equipment gas delivery method according to claim 1, characterized in that: Purity analysis methods also include: The external baseline is evenly divided into k parts, and based on the distance of each part from the test inlet, they are recorded as baseline sub-line JZ1 to baseline sub-line JZ from near to far. k ; For reference sub-line JZ1 to reference sub-line JZ k Any reference subline JZ in k1 , the transmission gas CQ is introduced into the purity test pipeline through the test inlet, and the rate SL is the rate SL nor , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL nor When the purity test pipe is connected to the outer wall, the reference sub-line JZ k1 Open the minimum sampling hole for the diameter of the sampling hole, record the test diameter corresponding to the midpoint of the minimum sampling hole as the sampling diameter, sample gas from the minimum sampling hole to areas A, B and C within the sampling diameter, close the minimum sampling hole after sampling and conduct purity test on the sampled gas, and record the test results as conventional purity in area A, conventional purity in area B and conventional purity in area C, respectively, where area A is the area in the sampling diameter closest to the minimum sampling hole, area B is the midpoint area of ​​the sampling diameter, and area C is the area in the sampling diameter farthest from the minimum sampling hole.

3. A semiconductor equipment gas delivery method according to claim 2, characterized in that: Purity analysis methods also include: Adjust the rate of gas CQ transported in the purity test pipeline to rate SL max , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL max When the minimum sampling hole is opened, gas sampling is performed again in the A area, the B area and the C area within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the high-speed purity of the A area, the high-speed purity of the B area and the high-speed purity of the C area respectively. Adjust the rate of gas CQ transported in the purity test pipeline to rate SL min , when the input rate of the transport gas CQ at the test inlet and the output rate of the transport gas CQ at the test outlet are both maintained at the rate SL min When the minimum sampling hole is opened, gas sampling is again carried out in areas A, B and C within the sampling diameter. After sampling, the minimum sampling hole is closed and the purity of the sampled gas is tested. The test results are recorded as the low-speed purity of area A, the low-speed purity of area B and the low-speed purity of area C respectively.

4. A semiconductor equipment gas delivery method according to claim 3, characterized in that: Purity analysis methods also include: A plane rectangular coordinate system is established and recorded as the purity analysis coordinate system, wherein the unit of the X-axis of the purity analysis coordinate system is distance and the unit of the vertical axis is percentage; the distance from the midpoint of the reference sub-line JZk1 to the test inlet is recorded as L, and in the purity analysis coordinate system, the line connecting (L, low-speed purity in area A), (L, low-speed purity in area B) and (L, low-speed purity in area C) is recorded as the low-speed purity line DS. k1 The line connecting (L, conventional purity in area A), (L, conventional purity in area B) and (L, conventional purity in area C) is recorded as the conventional purity line CG. k1 ; The line connecting (L, A zone high speed purity), (L, B zone high speed purity) and (L, C zone high speed purity) is recorded as the high speed purity line GS k1 ; Based on the reference subline JZ k1 The analysis method is used for the reference sub-line JZ1 to the reference sub-line JZ k Perform analysis and draw all low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS in the purity analysis coordinate system; All low-speed purity lines DS, conventional purity lines CG, and high-speed purity lines GS corresponding to all transmission gases CQ are obtained.

5. A semiconductor equipment gas delivery method according to claim 4, characterized in that: When different gases are transported in semiconductor equipment, purity detection points are set in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS, including: For any transmission gas CQ, a group of low-speed purity lines DS, conventional purity lines CG and high-speed purity lines GS with the same ordinates are recorded as the same-distance purity line group; for any purity line group with the same abscissa L1 corresponding to the transmission gas CQ, when the low-speed purity of area B or the high-speed purity of area B is outside the conventional purity line CG, L1 is recorded as the optional detection distance; when the optional detection distances are obtained by analyzing all the purity line groups with the same distances corresponding to the transmission gas CQ, all the optional detection distances are recorded as KX1 to KX p The transmission gas CQ is recorded as the purity unstable gas; the gas pipeline is respectively from the gas inlet KX1 to KX p The point is marked as the purity detection point; For KX1 to KX p Any KX p1 , when the horizontal axis is KX p1 When only the low-speed purity of area B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the low-speed instability detection point; when the horizontal axis is KX p1 When only the high-speed purity of zone B in the corresponding purity line group with the same distance is outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the high-speed instability detection point; when the horizontal axis is KX p1 When the corresponding purity line group with the same distance has high-speed purity in area B and low-speed purity in area B outside the conventional purity line CG, KX p1 The corresponding purity detection point is recorded as the speed instability detection point; When no optional detection distance is obtained when analyzing all purity line groups with the same distance corresponding to the transmission gas CQ, the transmission gas CQ is recorded as a purity-stable gas; All transmission gas CQs are analyzed and recorded as purity stable gases or purity detection points of transmission gas CQs are obtained.

6. A semiconductor equipment gas delivery method according to claim 5, characterized in that: When semiconductor equipment is delivering gas, corresponding purity detection points are set based on the type of gas, and gas delivery is regulated based on the detection results of the purity detection points, including: When the semiconductor equipment is transporting gas, the transported gas is recorded as the transported gas, and when the transported gas is a gas with stable purity, the transported gas is transported normally; When the transported gas is not recorded as purity-stable gas, the purity of the transported gas before transport is recorded as the rated purity, and the transport rate of the transported gas in the gas pipeline is obtained and recorded as the real-time rate; when the real-time rate changes, the transported gas in the gas pipeline is sampled at regular intervals at the variable speed unstable detection point corresponding to the transported gas. When the purity of the sampled transported gas is not equal to the rated purity, the gas transport is stopped and the purity of the transported gas is tested.

7. A semiconductor equipment gas delivery method according to claim 6, characterized in that: When the semiconductor equipment is delivering gas, the corresponding purity detection point is set based on the type of gas, and the gas delivery is regulated based on the detection result of the purity detection point, which also includes: When the real-time rate is greater than the rate SL nor When the purity of the transported gas obtained by sampling is not equal to the rated purity, the gas delivery is stopped and the purity of the transported gas is tested; When the real-time rate is less than the rate SL nor When the purity of the sampled transport gas is not equal to the rated purity, the gas delivery is stopped and the purity of the transport gas is tested.

8. A semiconductor equipment gas delivery system, used to implement a semiconductor equipment gas delivery method according to any one of claims 1 to 7, characterized in that: It includes a delivery purity analysis module, a delivery detection acquisition module and a delivery purity detection module; The transport purity analysis module records the pipeline used for gas transport of semiconductor equipment as a gas pipeline; based on the gas pipeline, the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS of all gases transported by the semiconductor equipment are obtained; The transport detection acquisition module is used to set purity detection points in the gas pipeline based on the low-speed purity line DS, the conventional purity line CG and the high-speed purity line GS when different gases are transported in the semiconductor equipment; The delivery purity detection module is used to set corresponding purity detection points based on the type of gas when the semiconductor equipment is delivering gas, and to regulate the gas delivery based on the detection results of the purity detection points.

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