Semiconductor packaging structure and manufacturing method thereof

Abstract

The invention discloses a semiconductor packaging structure and a manufacturing method thereof. The packaging structure comprises a supporting substrate, a chip body arranged on the supporting substrate, a metal lead connected between the supporting substrate and the chip body, a spacing assembly arranged on the chip body, and a light-transmitting plate body arranged on the chip body through the spacing assembly. The chip body, the spacing assembly and the light-transmitting plate body jointly enclose to form a closed space. The packaging structure further comprises a packaging colloid formed on the outer side of the closed space, and the packaging colloid is formed by curing liquid resin sealing glue. The encapsulant includes a plurality of first fillers and a plurality of second fillers dispersed therein. Before the liquid resin sealant is cured, the sinking rate of the second filler in the liquid resin sealant is smaller than that of the first filler. Therefore, the distribution condition of the filler is effectively improved, and the problem of glass breakage caused by filler separation in the prior art is effectively improved.

Description

Technical Field

[0001] The present application relates to a packaging structure, and more particularly to a semiconductor packaging structure and a manufacturing method thereof. Background Art

[0002] like Figures 1 to 3 As shown, in the prior art, the chip R1, gold wire R2, and glass R3 in the CIS package can be protected by surrounding with a liquid resin encapsulant R4 to prevent these components from being damaged during reliability testing or transportation, thereby preventing the product from failing.

[0003] However, during the curing process of the liquid resin sealant R4 used to prepare the CIS package, the viscosity of the liquid resin sealant R4 will change with the temperature. In this case, the filler FP (filler) originally added to the liquid resin sealant R4 is prone to sedimentation due to the lower viscosity of the material and the gravity sedimentation of the added filler, or because the filler FP is left standing for too long. Therefore, after the liquid resin sealant R4 is cured, the filler FP may be partially separated from the sealant R4 at the intersection of the highest point of the glass R3 and the sealant R4. This is called filler separation (e.g., Figure 2 As shown in FIG. 1 , there is no distribution of filler FP at the intersection of the highest point of the sealing glue R4.

[0004] The above-mentioned filler separation phenomenon can easily cause cracks C on the glass R3 of the finished CIS package during reliability tests (such as temperature cycle reliability tests), thereby causing the reliability test of the finished product to fail (such as Figure 3 shown). Summary of the invention

[0005] The technical problem to be solved by the present application is to provide a semiconductor packaging structure and a manufacturing method thereof in view of the deficiencies of the prior art, which can effectively improve the technical problem of glass breakage caused by filler separation in the prior art.

[0006] The present application discloses a semiconductor packaging structure, which includes: a supporting substrate; a chip body, which is arranged on a side surface of the supporting substrate; a metal lead, which is connected between the supporting substrate and the chip body; a spacer component, which is arranged on a side surface of the chip body; a light-transmitting plate body, which is arranged on the chip body through the spacer component, and the chip body, the spacer component and the light-transmitting plate body are surrounded together to form a closed space; and a packaging colloid, which is formed on the supporting substrate and covers the chip body, the spacer component and the light-transmitting plate body relative to the outer side of the closed space. And the packaging colloid covers the metal lead; wherein the packaging colloid is formed by curing a liquid resin sealant; the packaging colloid contains a plurality of first fillers and a plurality of second fillers dispersed therein; wherein the material properties of the plurality of first fillers and the plurality of second fillers meet the following conditions: before the liquid resin sealant is cured, the sinking rate of each of the first fillers in the liquid resin sealant is defined as a first sinking rate, and the sinking rate of each of the second fillers in the liquid resin sealant is defined as a second sinking rate, and the second sinking rate is less than the first sinking rate.

[0007] Optionally, a sensing chip is disposed on a surface of a side of the chip body away from the supporting substrate, the sensing chip is located in the closed space, and the metal lead is located outside the closed space.

[0008] Optionally, a portion of the upper half of the encapsulating body sandwiched between a body surface of the encapsulating body and an outer side wall of the transparent plate is defined as a top edge region, and at least part of the second fillers are dispersed in the top edge region of the encapsulating body.

[0009] Optionally, in the encapsulant, at least 65% of the first fillers are distributed in a lower half of the encapsulant, and at least 65% of the second fillers are distributed in an upper half of the encapsulant.

[0010] Optionally, each of the first fillers has a first density, and each of the second fillers has a second density; wherein the first density of each of the first fillers is greater than the second density of each of the second fillers.

[0011] Optionally, each of the first fillers has a spherical appearance and is defined by a first true sphericity, and each of the second fillers has a non-spherical appearance and is defined by a second true sphericity; wherein the first true sphericity of each of the first fillers is greater than the second true sphericity of each of the second fillers.

[0012] Optionally, the outer surface of each first filler is defined with a first surface roughness, and the outer surface of each second filler is defined with a second surface roughness; wherein the first surface roughness of each first filler is smaller than the second surface roughness of each second filler.

[0013] Optionally, the width of the light-transmitting plate gradually increases from its top surface to its bottom surface, and one side wall of the light-transmitting plate is a downwardly inclined side wall, so that the top edge area defined by the portion sandwiched between the colloid surface and the outer side wall of the light-transmitting plate in the upper half of the encapsulating colloid becomes smaller in space.

[0014] The present application also discloses a method for manufacturing a semiconductor packaging structure, including: providing a supporting substrate; disposing a chip body on a side surface of the supporting substrate; connecting a metal lead between the supporting substrate and the chip body; disposing a spacer component on a side surface of the chip body; disposing a light-transmitting plate body on the chip body through the spacer component, wherein the chip body, the spacer component and the light-transmitting plate body are surrounded together to form a closed space; forming a packaging colloid on the supporting substrate and covering the chip body, the spacer component, and the light-transmitting plate body relative to the closed space the outer side of the packaging colloid; wherein the packaging colloid is formed by curing a liquid resin sealant; the packaging colloid includes a plurality of first fillers and a plurality of second fillers dispersed therein; wherein the material properties of the plurality of first fillers and the plurality of second fillers meet the following conditions: before the liquid resin sealant is cured, the sinking rate of each of the first fillers in the liquid resin sealant is defined as a first sinking rate, and the sinking rate of each of the second fillers in the liquid resin sealant is defined as a second sinking rate, and the second sinking rate is less than the second sinking rate.

[0015] Optionally, a portion of the upper half of the encapsulating body sandwiched between a body surface of the encapsulating body and an outer side wall of the transparent plate is defined as a top edge region, and at least part of the second fillers are dispersed in the top edge region of the encapsulating body.

[0016] In summary, the semiconductor packaging structure and manufacturing method provided in the present application can effectively improve the filler distribution through the material feature design of the first filler and the second filler in the packaging colloid, and effectively improve the problem of glass breakage caused by filler separation in the prior art.

[0017] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, such description and drawings are only used to illustrate the present application and are not intended to limit the scope of protection of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a cross-sectional schematic diagram of a semiconductor packaging structure in the prior art.

[0019] Figure 2 for Figure 1 Schematic diagram of a partial enlargement of area II in the middle.

[0020] Figure 3 for Figure 2 Schematic diagram of cracks on the glass substrate in the semiconductor packaging structure.

[0021] Figure 4 It is a schematic cross-sectional view of a semiconductor package structure according to the first embodiment of the present application.

[0022] Figure 5 for Figure 4 A local enlarged schematic diagram of a semiconductor packaging structure.

[0023] Figure 6 It is a cross-sectional schematic diagram of a semiconductor package structure according to a second embodiment of the present application.

[0024] Figure 7 It is a cross-sectional schematic diagram of a semiconductor package structure according to a third embodiment of the present application.

[0025] Figure 8 It is a schematic cross-sectional view of a semiconductor package structure according to a fourth embodiment of the present application.

[0026] Fig. 9 It is a schematic cross-sectional view of a semiconductor package structure according to a fifth embodiment of the present application.

[0027] Fig.10 It is a schematic cross-sectional view of a semiconductor package structure according to a sixth embodiment of the present application.

[0028] Fig.11A Schematic diagram of step S110 of the method for manufacturing a semiconductor packaging structure according to an embodiment of the present application.

[0029] Fig. 11B Schematic diagram of step S120 of the method for manufacturing a semiconductor packaging structure according to an embodiment of the present application.

[0030] Fig. 11C Schematic diagram of step S130 of the method for manufacturing a semiconductor packaging structure according to an embodiment of the present application.

[0031] Fig.11D Schematic diagram of step S140 of the method for manufacturing a semiconductor packaging structure according to an embodiment of the present application. DETAILED DESCRIPTION

[0032] The following is a description of the implementation methods disclosed in this application through specific embodiments, and those skilled in the art can understand the advantages and effects of this application from the contents disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of this application.

[0033] In addition, the drawings of this application are only for simple illustration and are not depicted according to actual size. Please note that the following embodiments will further explain the relevant technical content of this application in detail, but the disclosed content is not intended to limit the protection scope of this application.

[0034] It should be understood that although the terms "first", "second", "third", etc. may be used herein to describe various components or signals, these components or signals should not be limited by these terms. These terms are mainly used to distinguish one component from another component, or one signal from another signal.

[0035] In addition, the term "or" used herein may include any one or more combinations of the associated listed items as appropriate.

[0036] For the first embodiment, please refer to Figure 4 and Figure 5 As shown, the first embodiment of the present application provides a semiconductor package structure 100A, which can be, for example, a semiconductor package structure for a complementary metal oxide semiconductor (CMOS) image sensor (i.e., a CIS package structure), but the present application is not limited thereto. The semiconductor package structure 100A of the embodiment of the present application can effectively improve the technical problem of glass cracking caused by filler separation in the prior art.

[0037] Specifically, the semiconductor package structure 100A includes: a supporting substrate 1 , a chip body 2 , a plurality of metal leads 3 , a spacer element 4 , a light-transmitting plate 5 and a packaging colloid 6 .

[0038] The material of the support substrate 1 may be, for example, a plastic substrate or a ceramic substrate, and the support substrate 1 may be, for example, formed with a circuit pattern 11 .

[0039] The chip body 2 is disposed on a side surface of the support substrate 1 (eg: Figure 4 The upper surface of the supporting substrate 1), and the other side surface of the supporting substrate 1 (such as: Figure 4 The lower surface of the support substrate 1 may be provided with a plurality of conductive pins 12 , for example.

[0040] Furthermore, at least one sensor chip 21 (eg, CMOS sensor chip) may be disposed on a surface of the chip body 2 away from the support substrate 1. The plurality of conductive pins 12 are configured to electrically connect the circuit pattern 11 and the sensor chip 21 to transmit electronic signals to an external device.

[0041] Each of the metal leads 3 is connected between the support substrate 1 and the chip body 2 through the connectors 31 at both ends thereof, so that the support substrate 1 and the chip body 2 can be electrically connected to each other through the plurality of metal leads 3. Each of the metal leads 3 can be, for example, a gold wire, a copper wire, an electrical conductor formed by mixing gold and palladium, or an electrical conductor formed by mixing gold and other trace metals.

[0042] The spacer component 4 may be, for example, in a ring shape (e.g., a square ring shape or a circular ring shape). The spacer component 4 is disposed on a surface of the chip body 2 that is away from the support substrate 1, and surrounds the sensing chip 21. The spacer component 4 may be made of, for example, glass or plastic (e.g., polyimide resin, amide resin, epoxy molded resin, or liquid crystal polymer, etc.).

[0043] The light-transmitting plate 5 is disposed on the chip body 2 via the spacer element 4, and the chip body 2, the spacer element 4, and the light-transmitting plate 5 together surround a closed space SP. The sensing chip 21 is located in the closed space SP, and the plurality of metal leads 3 are located outside the closed space SP.

[0044] The material of the light-transmitting plate 5 can be, for example, glass or plastic (such as acrylic resin or other light-transmitting plastic) with light-transmitting properties. Accordingly, a sensing signal from the outside can penetrate the light-transmitting plate 5 and be received by the sensing chip 21 located in the closed space SP.

[0045] Please continue reading Figure 4 and Figure 5 As shown, the encapsulant 6 is formed on the support substrate 1 and covers the chip body 2, the spacer element 4 and the light-transmitting plate 5 on the outside of the closed space SP. Furthermore, the encapsulant 6 covers the plurality of metal leads 3 therein.

[0046] The encapsulation colloid 6 may be formed by curing a liquid resin encapsulant, for example. The material of the liquid resin encapsulant may be at least one of epoxy resin encapsulant, silicone resin encapsulant, and polyurethane resin encapsulant. Furthermore, the liquid resin encapsulant may be formed on the support substrate 1 by glue dispensing and coated on the outside of the closed space SP, but the present application is not limited thereto.

[0047] The packaging colloid 6 can, for example, completely cover the outer walls of the chip body 2 , the spacer element 4 and the light-transmitting plate 5 , and the top surface of the light-transmitting plate 5 is exposed to the external environment and is not covered by the packaging colloid 6 .

[0048] In this embodiment, the thickness of the encapsulating colloid 6 on the supporting substrate 1 gradually decreases from the direction close to the chip body 2, the spacer element 4, and the light-transmitting plate 5. From another perspective, a colloid surface 61 of the encapsulating colloid 6 is a flat inclined surface that slopes downward from the connection with the light-transmitting plate 5 toward the outside, but the present invention is not limited thereto. The colloid surface 61 of the encapsulating colloid 6 can also be, for example, a concave curved surface that slopes downward toward the outside.

[0049] In this embodiment, the encapsulating colloid 6 roughly and completely covers the outer wall 51 of the transparent plate body 5, and the angle α between the colloid surface 61 of the encapsulating colloid 6 and the outer wall 51 of the transparent plate body 5 is an acute angle, that is, an angle less than 90 degrees, for example: an angle of 30 to 60 degrees, but the present application is not limited to this.

[0050] Specifically, the encapsulation resin 6 includes a plurality of first fillers FP11 and a plurality of second fillers FP12 dispersed therein.

[0051] The material properties of the plurality of first fillers FP11 and the plurality of second fillers FP12 satisfy the following conditions.

[0052] Before the liquid resin sealant is cured (and is in a flowing state), the sinking rate of each first filler FP11 in the liquid resin sealant is defined as a first sinking rate, and the sinking rate of each second filler FP12 in the liquid resin sealant is defined as a second sinking rate, and the second sinking rate is less than the second sinking rate.

[0053] From another perspective, each of the first fillers FP11 encounters a smaller sinking resistance when sinking in the liquid resin sealant, and can sink faster, thus having a larger first sinking rate. Furthermore, each of the second fillers FP12 encounters a larger sinking resistance when sinking in the liquid resin sealant, and will sink slower, thus having a smaller second sinking rate.

[0054] Since the first sinking rate of the multiple first fillers FP11 is greater than the second sinking rate of the multiple second fillers FP12, the multiple first fillers FP11 will sink faster and be mostly distributed in the lower half 62 of the packaging colloid 6, and the multiple second fillers FP12 will sink slower and be mostly distributed in the upper half 63 of the packaging colloid 6, wherein the portion of the upper half 63 of the packaging colloid 6 sandwiched by the colloid surface 61 and the outer side wall 51 of the light-transmitting plate body 5 is defined as a top edge area, and at least part of the multiple second fillers FP12 is dispersed in the top edge area of ​​the packaging colloid 6.

[0055] Accordingly, at least the second filler FP12 may be distributed at the junction of the encapsulating colloid 6 with the highest point of the light-transmitting plate 5 to improve the problem of glass breakage caused by filler separation in the prior art.

[0056] In some embodiments of the present application, at least 65%, preferably at least 70%, and particularly preferably at least 75% of the plurality of first fillers FP11 are distributed in the lower portion 62 of the encapsulant 6 .

[0057] Furthermore, at least 65%, preferably at least 70%, and particularly preferably at least 75% of the plurality of second fillers FP12 are distributed in the upper portion 63 of the encapsulant 6 .

[0058] That is, the first fillers FP11 and the second fillers FP12 have different distribution positions due to the difference in sinking speed. The first fillers FP11 and the second fillers FP12 are not evenly distributed in the encapsulant 6 .

[0059] The thickness of the encapsulation colloid 6 from the side surface (e.g., upper surface) of the support substrate 1 to the top edge (or top surface) of the light-transmitting plate 5 is defined as the maximum thickness Tmax. The lower half 62 of the encapsulation colloid 6 refers to the portion of the encapsulation colloid 6 from the upper surface of the support substrate 1 to the half position of the maximum thickness Tmax, which is defined as the lower half 62. The upper half 63 of the encapsulation colloid 6 refers to the remaining portion of the encapsulation colloid 6 located above the lower half 62, which is the upper half 63, but the present application is not limited thereto.

[0060] Furthermore, in the first embodiment of the present application, each of the first fillers FP11 has a first density, each of the second fillers FP12 has a second density, and the first density of each of the first fillers FP11 is greater than the second density of each of the second fillers FP12.

[0061] Furthermore, the first density of each first filler FP11 and the second density of each second filler FP12 are both greater than the density of the liquid resin sealant.

[0062] Accordingly, since each of the first fillers FP11 has a relatively large first density, each of the first fillers FP11 encounters relatively small sinking resistance when sinking in the liquid resin sealant and can sink relatively quickly, thus having a relatively large first sinking rate.

[0063] Furthermore, since each of the second fillers FP12 has a smaller second density, each of the second fillers FP12 encounters a larger sinking resistance when sinking in the liquid resin sealant, and will sink more slowly, thus having a smaller second sinking rate.

[0064] In some embodiments of the present application, the first density of each first filler FP11 may be, for example, between 3 g / cm 3 Up to 10g / cm 3 Between, and preferably between 3g / cm 3 Up to 7g / cm 3 The second density of each second filler FP12 may be, for example, between 1 g / cm 3 Up to 3g / cm 3 Between, and preferably between 2g / cm 3 Up to 3g / cm 3 Furthermore, the absolute value of a difference between the first density of each first filler FP11 and the second density of each second filler FP12 is not less than 1 g / cm 3 , but the application is not limited thereto.

[0065] In some embodiments of the present application, the material of each first filler FP11 may be, for example, at least one selected from the group consisting of silicon dioxide particles, silicon carbideparticles, silicon nitride particles, rubber particles, and composite particles of metal and rubber. The material of each second filler FP12 may be, for example, at least one selected from the group consisting of silicon dioxide particles, silicon carbideparticles, silicon nitride particles, rubber particles, and composite particles of metal and rubber. It should be noted that the material of each first filler FP11 and the material of each second filler FP12 may be the same or different, and the present application does not limit this.

[0066] The particle size (e.g., average particle size D50) of each first filler FP11 may be, for example, between 5 microns and 50 microns, and preferably between 5 microns and 20 microns. In addition, the particle size of each second filler FP12 may be, for example, between 5 microns and 35 microns, and preferably between 5 microns and 15 microns. It should be noted that the particle size of each first filler FP11 and the particle size of each second filler FP12 may be the same or different from each other, and this application does not limit this.

[0067] In some embodiments of the present application, based on the total weight of the encapsulating colloid 6 being 100wt%, a first weight percentage concentration of the plurality of first fillers FP11 in the encapsulating colloid 6 is between 5wt% and 15wt%, and preferably between 5wt% and 10wt%. In addition, a second weight percentage concentration of the plurality of second fillers FP12 in the encapsulating colloid 6 is between 5wt% and 15wt%, and preferably between 5wt% and 10wt%, but the present application is not limited thereto.

[0068] Furthermore, in some embodiments of the present application, the maximum thickness Tmax of the encapsulation colloid 6 defined from the upper surface of the support substrate 1 to the top edge of the light-transmitting plate 5 may be, for example, between 650 microns and 1600 microns, and preferably between 650 microns and 1000 microns.

[0069] In addition, the angle α between the colloid surface 61 of the encapsulating colloid 6 and the outer side wall 51 of the light-transmitting plate 5 is an acute angle (eg Figure 5 ), that is, an angle less than 90 degrees, for example: an angle of 30 to 60 degrees.

[0070] According to the above configuration, the semiconductor package structure 100A provided in the first embodiment of the present application can effectively improve the filler distribution through the material feature design of the first filler FP11 and the second filler FP12 in the packaging colloid 6, and effectively improve the glass cracking problem caused by filler separation in the prior art.

[0071] For the second embodiment, please refer to Figure 6 As shown, the second embodiment of the present application also provides a semiconductor package structure 100B, which is substantially the same as the semiconductor package structure 100A of the first embodiment, except for the size design of the filler.

[0072] More specifically, the encapsulant 6 in the semiconductor package structure 100B of the second embodiment of the present application includes a plurality of first fillers FP21 and a plurality of second fillers FP22 dispersed therein.

[0073] Each of the first fillers FP21 has a first density, each of the second fillers FP22 has a second density, and the first density of each of the first fillers FP21 is greater than the second density of each of the second fillers FP22. Furthermore, the first density of each of the first fillers FP21 and the second density of each of the second fillers FP22 are both greater than the density of the liquid resin sealant.

[0074] Specifically, each of the first fillers FP21 has a first particle size, and each of the second fillers FP22 has a second particle size, wherein the first particle size of each of the first fillers FP21 is smaller than the second particle size of each of the second fillers FP22. Figure 6 The first filler FP21 distributed in the lower half of the encapsulation colloid 6 has a smaller particle size, and the second filler FP22 distributed in the upper half of the encapsulation colloid 6 has a larger particle size.

[0075] In this embodiment, each of the first fillers FP21 encounters a smaller sinking resistance when sinking in the liquid resin sealant, and can sink faster, thus having a larger first sinking rate. Furthermore, each of the second fillers FP22 encounters a larger sinking resistance when sinking in the liquid resin sealant, and will sink slower, thus having a smaller second sinking rate.

[0076] According to the above configuration, the semiconductor package structure 100B provided in the second embodiment of the present application can effectively improve the filler distribution through the material feature design of the first filler FP21 and the second filler FP22 in the packaging colloid 6, and effectively improve the glass cracking problem caused by filler separation in the prior art.

[0077] For the third embodiment, please refer to Figure 7As shown, the third embodiment of the present application also provides a semiconductor packaging structure 100C, which is substantially the same as the semiconductor packaging structure 100A of the first embodiment, except that the size design of the filler is different. More specifically, the packaging colloid 6 in the semiconductor packaging structure 100C of the third embodiment of the present application includes a plurality of first fillers FP31 and a plurality of second fillers FP32 dispersed therein.

[0078] Each of the first fillers FP31 has a first density, each of the second fillers FP32 has a second density, and the first density of each of the first fillers FP31 is greater than the second density of each of the second fillers FP32. Furthermore, the first density of each of the first fillers FP31 and the second density of each of the second fillers FP32 are both greater than the density of the liquid resin sealant.

[0079] Specifically, each of the first fillers FP31 has a first particle size, and each of the second fillers FP32 has a second particle size, wherein the first particle size of each of the first fillers FP31 is greater than the second particle size of each of the second fillers FP32. Figure 7 The first filler FP31 distributed in the lower half of the encapsulation colloid 6 has a larger particle size. Furthermore, the second filler FP32 distributed in the upper half of the encapsulation colloid 6 has a smaller particle size.

[0080] In this embodiment, each of the first fillers FP31 encounters a smaller sinking resistance when sinking in the liquid resin sealant, and can sink faster, thus having a larger first sinking rate. Furthermore, each of the second fillers FP32 encounters a larger sinking resistance when sinking in the liquid resin sealant, and will sink slower, thus having a smaller second sinking rate.

[0081] According to the above configuration, the semiconductor package structure 100C provided in the third embodiment of the present application can effectively improve the filler distribution through the material feature design of the first filler FP31 and the second filler FP32 in the packaging colloid 6, and effectively improve the glass cracking problem caused by filler separation in the prior art.

[0082] For the fourth embodiment, please refer to Figure 8 As shown, the fourth embodiment of the present application also provides a semiconductor package structure 100D, which is substantially the same as the semiconductor package structure 100A of the first embodiment, except for the appearance and morphology design of the filler. More specifically, the packaging colloid 6 of the semiconductor package structure 100D of the fourth embodiment of the present application includes a plurality of first fillers FP41 and a plurality of second fillers FP42 dispersed therein.

[0083] Each of the first fillers FP41 has a spherical appearance and is defined by a first true sphericity. Each of the second fillers FP42 has a non-spherical appearance (such as a polygonal appearance) and is defined by a second true sphericity. The first true sphericity of each of the first fillers FP41 is greater than the second true sphericity of each of the second fillers FP42.

[0084] It should be noted that the "true sphericity" referred to in this embodiment is defined as "the ratio of the minimum particle size to the maximum particle size of the same particle". For example, when the ratio of the observed minimum particle size to the maximum particle size is greater than 0.8 as observed by a scanning electron microscope (SEM), it means that the true sphericity of the particle is greater than 0.8. If the "true sphericity" of a particle approaches 1, it means that the particle is close to an ideal sphere.

[0085] like Figure 8 The first filler FP41 distributed in the lower part of the encapsulating colloid 6 has a spherical appearance, and thus has a higher first true sphericity. In addition, the second filler FP42 distributed in the upper part of the encapsulating colloid 6 has a polygonal appearance, and thus has a lower second true sphericity.

[0086] In this embodiment, since each of the first fillers FP41 has a higher first true sphericity, each of the first fillers FP41 encounters a smaller sinking resistance when sinking in the liquid resin sealant (the contact area between the filler and the liquid resin sealant is smaller), and can sink faster, thereby having a larger first sinking rate.

[0087] Furthermore, since each second filler FP42 has a lower second true sphericity, each second filler FP42 encounters a larger sinking resistance when sinking in the liquid resin sealant (the contact area between the filler and the liquid resin sealant is larger), and it will sink more slowly, thus having a smaller second sinking rate.

[0088] In some embodiments of the present application, the first true sphericity of each first filler FP41 is approximately between 0.6 and 1.0, the second true sphericity of each second filler FP42 is approximately between 0.4 and 0.8, and the absolute value of a difference between the first true sphericity and the second true sphericity is not less than 0.05, and preferably not less than 0.1, but the present application is not limited thereto.

[0089] According to the above configuration, the semiconductor package structure 100D provided in the fourth embodiment of the present application can effectively improve the filler distribution through the appearance design of the first filler FP41 and the second filler FP42 in the packaging colloid 6, and effectively improve the problem of glass cracking caused by filler separation in the prior art.

[0090] It is worth mentioning that in the fourth embodiment of the present application, the density of the first filler FP41 and the density of the second filler FP42 can be the same or different, and the particle size of the first filler FP41 and the particle size of the second filler FP42 can be the same or different, and the present application does not limit this.

[0091] As long as the appearance morphology and true sphericity design of the first filler FP41 and the second filler FP42 can make each of the first fillers FP41 have a larger first sinking rate in the liquid resin sealant, and make each of the second fillers FP42 have a smaller second sinking rate in the liquid resin sealant, it complies with the protection spirit of this application and falls within the protection scope of this application.

[0092] For the fifth embodiment, please refer to Fig. 9 As shown, the fifth embodiment of the present application also provides a semiconductor package structure 100E, which is substantially the same as the semiconductor package structure 100A of the first embodiment, except for the surface roughness design of the filler. More specifically, the packaging colloid 6 of the semiconductor package structure 100E of the fifth embodiment of the present application includes a plurality of first fillers FP51 and a plurality of second fillers FP52 dispersed therein.

[0093] The outer surface of each first filler FP51 has a first surface roughness. The outer surface of each second filler FP52 has a second surface roughness, and the first surface roughness of each first filler FP51 is smaller than the second surface roughness of each second filler FP52.

[0094] That is, each of the first fillers FP51 has a relatively smooth surface, and each of the second fillers FP52 has a relatively rough surface.

[0095] like Fig. 9 The first filler FP51 distributed in the lower part of the encapsulation colloid 6 has a smoother surface and thus has a lower first surface roughness, while the second filler FP52 distributed in the upper part of the encapsulation colloid 6 has a rougher surface and thus has a higher second surface roughness.

[0096] In this embodiment, since each of the first fillers FP51 has a lower first surface roughness, each of the first fillers FP51 encounters a smaller sinking resistance when sinking in the liquid resin sealant (the filler surface is smoother and the resistance in contact with the liquid resin sealant is smaller), and can sink faster, thereby having a larger first sinking rate. In addition, since each of the second fillers FP52 has a higher second surface roughness, each of the second fillers FP52 encounters a larger sinking resistance when sinking in the liquid resin sealant (the filler surface is rougher and the resistance in contact with the liquid resin sealant is larger), and it will sink slower, thereby having a smaller second sinking rate.

[0097] In some embodiments of the present application, the first surface roughness and the second surface roughness are both defined by an arithmetic mean roughness Ra, and the arithmetic mean roughness Ra can be tested by, for example, an atomic force microscope (AFM) to calculate Ra according to the international standard test method of JIS B 0601, but the present application is not limited thereto.

[0098] In some embodiments of the present application, the first surface roughness of each first filler FP51 is between 25nm and 100nm, and preferably between 25nm and 75nm. In addition, the second surface roughness of each second filler FP52 is between 50nm and 125nm, and preferably between 75nm and 125nm. Furthermore, the absolute value of a difference between the first surface roughness and the second surface roughness is not less than 25nm, but the present application is not limited thereto.

[0099] According to the above configuration, the semiconductor packaging structure 100E provided in the fifth embodiment of the present application can effectively improve the filler distribution through the surface roughness design of the first filler FP51 and the second filler FP52 in the packaging colloid 6, and effectively improve the problem of glass cracking caused by filler separation in the prior art.

[0100] It is worth mentioning that in the fifth embodiment of the present application, the density of the first filler FP51 and the density of the second filler FP52 can be the same or different, and the particle size of the first filler FP51 and the particle size of the second filler FP52 can be the same or different, and the present application does not limit this.

[0101] As long as the surface roughness design of the first filler FP51 and the second filler FP52 can make each of the first fillers FP51 have a larger first sinking rate in the liquid resin sealant, and make each of the second fillers FP52 have a smaller second sinking rate in the liquid resin sealant, it complies with the protection spirit of this application and falls within the protection scope of this application.

[0102] For the sixth embodiment, please refer to Fig.10 As shown, the sixth embodiment of the present application provides a semiconductor package structure 100F, which is substantially the same as the semiconductor package structure 100A of the first embodiment, except for the design of the light-transmitting plate 5 .

[0103] In detail, the width of the light-transmitting plate body 5 of the sixth embodiment of the present application gradually increases from the top surface to the bottom surface. In other words, the light-transmitting plate body 5 is narrow at the top and wide at the bottom. From the side view, the light-transmitting plate body 5 is in a trapezoidal shape, and the side wall 51 of the light-transmitting plate body 5 is a side wall that is inclined downward.

[0104] Accordingly, the top edge region defined by the portion sandwiched between the colloid surface 61 and the outer side wall 51 of the light-transmitting plate body 5 in the upper half of the encapsulating colloid 6 can be reduced in space. Accordingly, the filler (such as the second filler FP12) dispersed in the top edge region of the encapsulating colloid 6 can be less likely to sink and can be more completely filled in the top edge region.

[0105] According to the above configuration, the semiconductor packaging structure 100E provided in the sixth embodiment of the present application can further effectively improve the filler distribution by presenting a narrow top and wide bottom design through the transparent plate 5, and effectively improve the problem of glass breakage caused by filler separation in the prior art.

[0106] Manufacturing Method of Semiconductor Package Structure The above is a description of the structural features and material features of the semiconductor package structure of the embodiment of the present application, and the manufacturing method of the semiconductor package structure of the embodiment of the present application will be described below.

[0107] See also FIG. 11A to FIG. 11D As shown, the present embodiment provides a method for manufacturing a semiconductor package structure, including steps S110 to S140. It must be noted that the order and actual operation methods of the steps in this embodiment can be adjusted according to needs and are not limited to those in this embodiment.

[0108] like Fig.11A As shown, the step S110 includes: providing a supporting substrate 1 , and disposing a chip body 2 on a side surface (eg, upper surface) of the supporting substrate 1 .

[0109] The support substrate 1 may be formed with a circuit pattern 11, and the other side surface (e.g., the lower surface) of the support substrate 1 may be provided with a plurality of conductive pins 12. The chip body 2 may be provided with at least one sensor chip 21 on a side surface away from the support substrate 1. The plurality of conductive pins 12 are configured to electrically connect the circuit pattern 11 and the sensor chip 21.

[0110] like Fig. 11BAs shown, the step 120 includes: connecting the plurality of metal leads 3 between the support substrate 1 and the chip body 2 respectively, so that the support substrate 1 and the chip body 2 can be electrically connected to each other through the plurality of metal leads 3 .

[0111] like Fig. 11C As shown, the step S130 includes: placing a light-transmitting plate 5 on the chip body 2 through a spacer component 4, so that the chip body 2, the spacer component 4, and the light-transmitting plate 5 together surround a closed space SP. The sensing chip 21 is located in the closed space SP, and the plurality of metal leads 3 are located outside the closed space SP.

[0112] like Fig.11D As shown, the step S140 includes: forming a packaging colloid 6 on the supporting substrate 1 and covering the chip body 2, the spacer element 4, and the transparent plate 5 relative to the outer side of the closed space SP, and the packaging colloid 6 covers the plurality of metal leads 3 therein.

[0113] In this embodiment, the encapsulation 6 may be, for example, formed by curing a liquid resin encapsulant, and may be, for example, formed on the support substrate 1 by dispensing to cover the outside of the closed space SP.

[0114] The packaging colloid 6 includes a plurality of first fillers FP11 and a plurality of second fillers FP12 dispersed therein.

[0115] Specifically, the material properties of the plurality of first fillers FP11 and the plurality of second fillers FP12 satisfy the following conditions.

[0116] Before the liquid resin sealant is cured (and is in a flowing state), the sinking rate of each first filler FP11 in the liquid resin sealant is defined as a first sinking rate, and the sinking rate of each second filler FP12 in the liquid resin sealant is defined as a second sinking rate, and the second sinking rate is less than the first sinking rate.

[0117] From another perspective, each of the first fillers FP11 encounters a smaller sinking resistance when sinking in the liquid resin sealant, and can sink faster, thus having a larger first sinking rate. In addition, each of the second fillers FP12 encounters a larger sinking resistance when sinking in the liquid resin sealant, and will sink slower, thus having a smaller second sinking rate.

[0118] According to the above configuration, the manufacturing method of the semiconductor packaging structure of this embodiment can effectively improve the filler distribution by designing the material properties of the first filler FP11 and the second filler FP12 in the packaging colloid 6, and further effectively improve the problem of glass breakage caused by filler separation in the prior art.

[0119] Beneficial Effects of Embodiments One of the beneficial effects of the present application is that the semiconductor packaging structure and the manufacturing method thereof provided by the present application can effectively improve the filler distribution through the material characteristic design of the first filler and the second filler in the encapsulation colloid, and effectively improve the problem of glass breakage caused by filler separation in the prior art.

[0120] The contents disclosed above are only optional feasible embodiments of the present application, and are not intended to limit the scope of the present patent application. Therefore, all equivalent technical changes made using the description and drawings of the present application are included in the scope of the present patent application.

Claims

1. A semiconductor packaging structure, characterized in that: The semiconductor packaging structure comprises: a supporting substrate; A chip body is disposed on a side surface of the supporting substrate; A metal lead connected between the support substrate and the chip body; A spacer component is disposed on a side surface of the chip body; a light-transmitting plate body, which is disposed on the chip body through the spacer component, and the chip body, the spacer component and the light-transmitting plate body together surround a closed space; and A packaging colloid is formed on the supporting substrate and covers the chip body, the spacer component, and the outer side of the light-transmitting plate relative to the closed space, and the packaging colloid covers the metal lead; The encapsulation colloid is formed by curing a liquid resin sealant; the encapsulation colloid contains a plurality of first fillers and a plurality of second fillers dispersed therein; Among them, the material properties of multiple first fillers and multiple second fillers meet the following conditions: before the liquid resin sealant is cured, the sinking rate of each first filler in the liquid resin sealant is defined as a first sinking rate, and the sinking rate of each second filler in the liquid resin sealant is defined as a second sinking rate, and the second sinking rate is less than the first sinking rate.

2. The semiconductor package structure according to claim 1, wherein: A sensing chip is arranged on a surface of one side of the chip body away from the supporting substrate. The sensing chip is located in the closed space, and the metal lead is located outside the closed space.

3. The semiconductor package structure according to claim 1, wherein: The portion of the upper part of the encapsulating body sandwiched between a body surface of the encapsulating body and an outer side wall of the transparent plate is defined as a top edge region, and at least part of the second fillers are dispersed in the top edge region of the encapsulating body.

4. The semiconductor package structure according to claim 1, wherein: In the encapsulant, at least 65% of the first fillers are distributed in a lower portion of the encapsulant, and at least 65% of the second fillers are distributed in an upper portion of the encapsulant.

5. The semiconductor package structure according to claim 1, wherein: Each of the first fillers has a first density, and each of the second fillers has a second density; wherein the first density of each of the first fillers is greater than the second density of each of the second fillers.

6. The semiconductor package structure according to claim 1, wherein: Each of the first fillers has a spherical appearance and is defined by a first true sphericity, and each of the second fillers has a non-spherical appearance and is defined by a second true sphericity; wherein the first true sphericity of each of the first fillers is greater than the second true sphericity of each of the second fillers.

7. The semiconductor package structure according to claim 1, wherein: The outer surface of each first filler is defined with a first surface roughness, and the outer surface of each second filler is defined with a second surface roughness; wherein the first surface roughness of each first filler is smaller than the second surface roughness of each second filler.

8. The semiconductor package structure according to claim 3, wherein: The width of the light-transmitting plate increases gradually from its top surface to its bottom surface, and one side wall of the light-transmitting plate is a downwardly inclined side wall, so that the top edge area defined by the portion sandwiched between the colloid surface and the outer side wall of the light-transmitting plate in the upper half of the encapsulating colloid becomes smaller in space.

9. A method for manufacturing a semiconductor packaging structure, characterized in that: The manufacturing method of the semiconductor packaging structure comprises: providing a supporting substrate; Disposing a chip body on a side surface of the supporting substrate; Connecting a metal lead between the support substrate and the chip body; Disposing a spacer component on a side surface of the chip body; A light-transmitting plate is disposed on the chip body through the spacer component, wherein the chip body, the spacer component and the light-transmitting plate are surrounded together to form a closed space; Forming a packaging colloid on the supporting substrate and covering the chip body, the spacer component, and the outer side of the light-transmitting plate relative to the closed space; wherein the packaging colloid covers the metal lead; The encapsulation colloid is formed by curing a liquid resin sealant; the encapsulation colloid contains a plurality of first fillers and a plurality of second fillers dispersed therein; Among them, the material properties of multiple first fillers and multiple second fillers meet the following conditions: before the liquid resin sealant is cured, the sinking rate of each first filler in the liquid resin sealant is defined as a first sinking rate, and the sinking rate of each second filler in the liquid resin sealant is defined as a second sinking rate, and the second sinking rate is less than the second sinking rate.

10. The method for manufacturing a semiconductor package structure according to claim 9, wherein: The portion of the upper part of the encapsulating body sandwiched between a body surface of the encapsulating body and an outer side wall of the transparent plate is defined as a top edge region, and at least part of the second fillers are dispersed in the top edge region of the encapsulating body.

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