Packaging structure with interconnection channel and preparation method thereof

Abstract

The invention relates to the technical field of electronic packaging, and particularly discloses a packaging structure with interconnection channels and a preparation method thereof.The packaging structure with the interconnection channels comprises a first glass substrate, a second glass substrate, a third glass substrate and a fourth glass substrate, the glass conversion block is mounted in the embedding groove; the plurality of processing units are arranged on the top surface of the first glass substrate and are mutually connected through the glass conversion block; the first glass substrate is further provided with a plurality of first glass through holes and conductive metal filled in the first glass through holes, and the processing unit is further connected with the conductive metal in the first glass through holes; according to the packaging structure, a packaging solution with high integration, high performance and high reliability is realized, the influence of thermal cycle and mechanical stress can be effectively resisted, the problems of welding spot breakage or substrate warping and the like easily occurring under the action of temperature change or mechanical stress when the packaging structure is used are solved, and the reliability and durability of a product are greatly improved.

Description

Technical Field

[0001] The present application relates to the technical field of electronic packaging, and in particular to a packaging structure with interconnected channels and a preparation method thereof. Background Art

[0002] With the continuous development of electronic products, the requirements for packaging structures are becoming higher and higher. Traditional packaging structures usually use a single substrate and directly mount multiple processing units on the substrate.

[0003] EMIB is a 2.5D packaging technology led by Intel that uses multiple embedded bridge chips (Silicon Bridge) to achieve high-speed interconnection between chiplets.

[0004] The EMIB package generally embeds a silicon bridge on a substrate, and uses the silicon bridge to interconnect multiple different chips; however, the substrate used to embed the silicon bridge is generally made of materials such as ABF, BT, and FR-4. The thermal expansion coefficients of the substrates of these materials and the silicon bridges embedded inside them are quite different, which causes the package to be prone to problems such as solder joint breakage or substrate warping under temperature changes or mechanical stress during use, affecting the long-term reliability of the system.

[0005] There is currently no effective technical solution to the above problems. Summary of the invention

[0006] The purpose of the present application is to provide a packaging structure with interconnected channels and a preparation method thereof, so as to solve the problems of solder joint fracture and substrate warping of the packaging structure.

[0007] In a first aspect, the present application provides a packaging structure with interconnected channels, the packaging structure with interconnected channels comprising: A first glass substrate having an embedding groove on its top surface; A glass conversion block is installed in the embedding groove; a plurality of processing units, all disposed on the top surface of the first glass substrate and interconnected through the glass conversion block; The first glass substrate also has a plurality of first through-glass holes and conductive metals filled in the first through-glass holes, and the processing unit is also interconnected with the conductive metals in the first through-glass holes.

[0008] The packaging structure with interconnected channels of the present application is combined with a glass substrate, a glass conversion block and multiple processing units to achieve a highly integrated, high-performance and high-reliability packaging solution. It can effectively resist the influence of thermal cycles and mechanical stress, and solve the problems of solder joint breakage or substrate warping that are prone to occur when the packaging structure is used under temperature changes or mechanical stress, thereby greatly improving the reliability and durability of the product.

[0009] The packaging structure with interconnected channels, wherein a first metal layer is provided at the bottom of the embedded groove.

[0010] In this example, the first metal layer acts as a good thermal bridge between the glass converter block and the substrate, improves the thermal conductivity, and can help to more effectively dissipate the heat generated by the glass converter block and the processing unit. It can quickly conduct the heat generated by the glass converter block to the first glass substrate, and then dissipate it through the heat dissipation system, which helps to keep the chip within a suitable operating temperature range, helps to maintain the temperature stability of the entire packaging structure, and prevents performance degradation or damage caused by overheating. In addition, the first metal layer also plays an important role in electromagnetic shielding. During high-frequency signal transmission, the first metal layer can effectively reduce electromagnetic interference and improve signal integrity.

[0011] The packaging structure with interconnected channels, wherein the glass transition block comprises an insulating layer, a glass transition block wiring layer, a glass transition block substrate and a bonding layer which are sequentially arranged from top to bottom.

[0012] In this example, the specific structure of the glass converter block plays a key role in solving the problem of efficient signal transmission. Its insulation layer effectively isolates external interference and protects the internal circuit. Its glass converter block wiring layer achieves high-speed, low-loss signal transmission through optimized wiring design. Its glass converter block substrate not only provides mechanical support, but also can integrate additional functions to enhance the performance of the glass converter block. Its bonding layer ensures the stability and reliability of the entire structure.

[0013] In the packaging structure with interconnected channels, the bonding layer and the insulating layer are made of the same material.

[0014] The packaging structure with interconnected channels, wherein the top surface of the glass conversion block further has a pad surrounded by a solder resist layer.

[0015] The packaging structure with interconnected channels, wherein the processing unit is one of FPGA, GPU, CPU, memory, I / O chip, and EIC.

[0016] The package structure with interconnected channels, wherein the package structure with interconnected channels further comprises: The second glass substrate is fixed on the top surface of the first glass substrate and has a plurality of second through-glass holes corresponding to the first through-glass holes and a plurality of third through-glass holes corresponding to the contacts of the glass transition block, and the second through-glass holes and the third through-glass holes are filled with conductive metal.

[0017] The packaging structure with interconnected channels, wherein the middle of the bottom surface of the second glass substrate has a dam extending downward, the dam is inserted into the embedding groove, and the inner and outer walls are respectively in contact with the outer periphery of the glass conversion block and the inner wall of the embedding groove.

[0018] In the packaging structure with interconnected channels, the thickness of a portion of the second glass substrate located inside the dam is smaller than the thickness of a portion located outside the dam.

[0019] In a second aspect, the present application further provides a method for preparing a packaging structure with interconnected channels, which is used to prepare the packaging structure with interconnected channels provided in the first aspect, and the preparation method comprises the following steps: Preparing a first glass substrate, and punching the first glass substrate to form an embedding groove and a plurality of first glass through holes; Filling a conductive metal in the first through-glass hole; preparing a glass transition block according to the bonding requirements of the processing unit, and fixing the glass transition block in the embedding groove; A plurality of processing units are bonded over the first glass substrate so that the plurality of processing units are interconnected with the conductive metal in the first through-glass vias and the plurality of processing units are interconnected through the glass transition block.

[0020] From the above, it can be seen that the present application provides a packaging structure with interconnected channels and a preparation method thereof, wherein the packaging structure with interconnected channels is made by the preparation method of the packaging structure with interconnected channels, which is combined with a glass substrate, a glass conversion block and multiple processing units to achieve a highly integrated, high-performance and high-reliability packaging solution, which can effectively resist the influence of thermal cycles and mechanical stress, and solve the problems of solder joint breakage or substrate warping that are prone to occur when the packaging structure is used under temperature changes or mechanical stress, thereby greatly improving the reliability and durability of the product. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 A schematic diagram of a packaging structure with interconnected channels provided in some embodiments of the present application.

[0022] Figure 2 A schematic diagram of a packaging structure with interconnected channels provided in some other embodiments of the present application.

[0023] Figure 3 Schematic diagram of the structure of the glass transition block.

[0024] Figure 4 A schematic diagram of a packaging structure with interconnected channels provided in some other embodiments of the present application.

[0025] Figure 5A schematic structural diagram of a packaging structure with interconnected channels provided in some further embodiments of the present application.

[0026] Figure 6 A flow chart of a method for preparing a packaging structure with interconnected channels provided in an embodiment of the present application.

[0027] Figure numerals: 1, first glass substrate; 2, glass converter block; 3, processing unit; 4, first metal layer; 5, solder resist layer; 6, pad; 7, second glass substrate; 8, second metal layer; 9, third glass substrate; 11, embedding groove; 12, first through-glass hole; 21, insulating layer; 22, glass converter block wiring layer; 23, glass converter block substrate; 24, bonding layer; 71, second through-glass hole; 72, third through-glass hole; 73, dam; 91, fourth through-glass hole; 92, fifth through-glass hole. DETAILED DESCRIPTION

[0028] The embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0029] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.

[0030] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or mutual communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0032] The disclosure below provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0033] First, please refer to Figure 1-Figure 5 Some embodiments of the present application provide a packaging structure with interconnection channels, and the packaging structure with interconnection channels includes: A first glass substrate 1, having an embedding groove 11 on its top surface; The glass conversion block 2 is installed in the embedding groove 11; A plurality of processing units 3 are arranged on the top surface of the first glass substrate 1 and are interconnected through the glass conversion block 2; The first glass substrate 1 further has a plurality of first through-glass holes 12 and conductive metals filled in the first through-glass holes 12 , and the processing unit 3 is also interconnected with the conductive metals in the first through-glass holes 12 .

[0034] Specifically, the packaging structure with interconnection channels in the embodiment of the present application belongs to an improved application of EMIB (Embedded Multi-Die Interconnect Bridge) technology. The packaging structure with interconnection channels in the embodiment of the present application uses glass as the substrate material of the package body. The first glass substrate 1 not only has good insulation and flatness, but also can form precise embedding grooves 11 and through holes through a specific process, which lays a foundation for the subsequent installation of the glass conversion block 2 and the interconnection of the processing unit 3. The glass conversion block 2, as an interconnection medium between multiple processing units 3, undertakes the important task of signal transmission and is mainly used to provide a short-distance, low-loss interconnection path to reduce signal delay and interference; the packaging structure with interconnection channels in the embodiment of the present application utilizes the combination of the first glass substrate 1 and the glass conversion block 2 to achieve efficient interconnection between multiple processing units 3. This structure not only improves the packaging density, but also significantly improves the signal transmission efficiency, providing a solid hardware foundation for high-performance computing and data processing.

[0035] More specifically, unlike the traditional EMIB technology, the first glass substrate 1 replaces the existing substrate made of ABS, BT or FR-4 and other materials. Its material is consistent with the main material of the glass transition block 2, so its thermal expansion coefficient (CTE) is basically consistent with the heat dissipation expansion coefficient of the glass transition block 2, and can effectively resist the influence of thermal cycles and mechanical stress. In long-term reliability tests, the packaging structure with interconnected channels in the embodiment of the present application can effectively solve the problems of solder joint breakage or substrate warping that are prone to occur when the packaging structure is used under temperature changes or mechanical stress, thereby improving the reliability and durability of the product, and showing excellent stability, and maintaining good electrical performance even under extreme temperature and humidity conditions.

[0036] More specifically, the use of the first glass substrate 1 also improves the heat dissipation performance of the packaging structure, which is beneficial to maintaining a stable operating temperature of the processing unit 3 .

[0037] More specifically, considering that glass materials doped with different materials will still exhibit greatly different thermal expansion coefficients, in the embodiment of the present application, the first glass substrate 1 is preferably made of BF33 glass or Pyrex 7740 glass, which can more effectively avoid problems such as solder joint breakage or substrate warping.

[0038] It should be noted that a solder or pad connected to the conductive metal in the first glass through hole 12 is provided at the bottom of the first glass substrate 1 for soldering and fixing the packaging structure with interconnected channels of the embodiment of the present application in the circuit board to realize the installation of the processing unit 3.

[0039] It should be noted that, in the embodiment of the present application, the processing unit 3 is preferably interconnected with the conductive metal in the first through-glass hole 12 and the glass transition block 2 by soldering.

[0040] It should be noted that the glass transition block 2 (Silicon Bridge) is used to realize the electrical connection between different processing units 3. It provides short-distance high-density interconnection, which greatly improves the data transmission bandwidth between chips and meets the needs of high-performance computing applications. The processing unit 3 can be various chips or chip components. The packaging structure with interconnection channels in the embodiment of the present application realizes the function of heterogeneous integration by interconnecting the processing units 3 based on the glass transition block 2.

[0041] In general, the packaging structure with interconnected channels in the embodiment of the present application is combined with a glass substrate, a glass conversion block 2 and multiple processing units 3 to achieve a highly integrated, high-performance and high-reliability packaging solution, which can effectively resist the influence of thermal cycles and mechanical stress, and solve the problems of solder joint breakage or substrate warping that are prone to occur when the packaging structure is used under temperature changes or mechanical stress, thereby greatly improving the reliability and durability of the product.

[0042] In some preferred embodiments, Figure 2 As shown, the bottom of the embedding groove 11 is provided with a first metal layer 4 .

[0043] When implementing a packaging structure with interconnected channels, the present application has found that there may be some limitations in simply installing the glass transition block 2 in the embedding groove 11 of the first glass substrate 1. For example, the contact area between the glass transition block 2 and the first glass substrate 1 is limited, which may affect the stability and heat dissipation effect of the structure. In addition, signal interference and loss may occur during high-frequency signal transmission.

[0044] Specifically, the method of arranging the first metal layer 4 at the bottom of the embedded groove 11 to connect with the glass transition block 2 can enhance the connection strength between the glass transition block 2 and the first glass substrate 1, which is mainly manifested in that a stronger bonding effect can be formed with the bottom of the glass transition block 2, thereby improving the stability and reliability of the entire packaging structure, and effectively reducing the risk of damage or falling off of the glass transition block 2 caused by external factors such as vibration and impact; secondly, the first metal layer 4 plays a good thermal bridge role between the glass transition block 2 and the substrate, improves the thermal conductivity, and can help dissipate the heat generated by the glass transition block 2 and the processing unit 3. It can quickly conduct the heat generated by the glass transition block 2 to the first glass substrate 1, and then dissipate it through the heat dissipation system, which helps to keep the chip within a suitable operating temperature range, and is more helpful to maintain the temperature stability of the entire packaging structure, and prevent the packaging structure from overheating and causing performance degradation or damage; in addition, the first metal layer 4 also plays an important role in electromagnetic shielding. During high-frequency signal transmission, the first metal layer 4 can effectively reduce electromagnetic interference and improve signal integrity.

[0045] More specifically, the first metal layer 4 can be realized by a variety of materials and processes. For example, a metal material with excellent electrical conductivity such as copper, aluminum or gold can be used. In the embodiment of the present application, copper is preferred. These metals can be deposited on the bottom of the embedded groove 11 by evaporation, sputtering or electroplating.

[0046] In some preferred embodiments, Figure 3 As shown, the glass converter block 2 includes an insulating layer 21, a glass converter block wiring layer 22, a glass converter block substrate 23 and an adhesive layer 24 which are sequentially arranged from top to bottom.

[0047] Specifically, the glass conversion block 2 is a key component connecting multiple processing units 3, and its internal structure directly affects the performance of the entire packaging structure. In the embodiment of the present application, the glass transition block 2 includes four key layers: an insulating layer 21, a glass transition block wiring layer 22, a glass transition block substrate 23 and an adhesive layer 24. This multi-layer structure design can not only effectively improve the quality of signal transmission, but also ensure a firm connection between the glass transition block 2 and the glass substrate; wherein the insulating layer 21 is located at the top layer of the glass transition block 2, and is mainly used for electrical isolation and protection, and can effectively prevent signal interference, while protecting the wiring of the lower layer from the influence of the external environment; the glass transition block wiring layer 22 is responsible for the actual signal transmission task, and is usually made of a highly conductive metal material (such as copper or aluminum). The design of the wiring layer needs to consider factors such as signal integrity and impedance matching, and the wiring design is combined with the bonding requirements of the processing unit 3 to ensure the effective transmission of high-speed signals; the glass transition block substrate 23 serves as the supporting basis of the entire glass transition block 2 structure; the adhesive layer 24 is located at the bottom of the glass transition block 2, and is responsible for firmly fixing the glass transition block 2 in the embedding groove 11 of the first glass substrate 1, and is fixed by bonding to the first metal layer 4.

[0048] It should be noted that the glass converter block 2 has contacts for interconnecting the processing unit 3 , and the contacts are located on the insulating layer 21 and connected to the glass converter block wiring layer 22 through the insulating layer 21 .

[0049] More specifically, the bonding layer 24 needs to have good adhesion and thermal stability, and in the embodiment of the present application, epoxy resin or special conductive glue is preferably used.

[0050] More specifically, the specific structure of the above-mentioned glass converter block 2 plays a key role in solving the problem of efficient signal transmission. Its insulating layer 21 effectively isolates external interference and protects the internal circuit. Its glass converter block wiring layer 22 realizes high-speed and low-loss signal transmission through optimized wiring design. Its glass converter block substrate 23 not only provides mechanical support, but also can integrate additional functions to enhance the performance of the glass converter block 2. Its bonding layer 24 ensures the stability and reliability of the entire structure.

[0051] In some preferred embodiments, the bonding layer 24 and the insulating layer 21 are made of the same material.

[0052] Specifically, the insulating layer 21 and the bonding layer 24 are parallel to each other and are respectively located on the top and bottom surfaces of the glass transition block 2 structure. When the temperature changes, the insulating layer 21 and the bonding layer 24 corresponding to the two interfaces will generate stresses in opposite directions on the glass transition block 2 structure. If the bonding layer 24 and the insulating layer 21 are made of different materials, when the temperature changes, the upper and lower interfaces of the glass transition block 2 structure will generate stresses with large differences, resulting in asymmetric shrinkage or expansion, which in turn causes the glass transition block 2 to have interface delamination, cracking, warping and other problems. The bonding layer 24 and the insulating layer 21 in the packaging structure with interconnected channels in the embodiment of the present application are made of the same material, which can achieve stress offset at the two interfaces in the glass transition block 2 structure, further improving the reliability and durability of the product.

[0053] More specifically, in the embodiment of the present application, the adhesive layer 24 and the insulating layer 21 preferably have the same thickness to more effectively achieve stress offset.

[0054] In some preferred embodiments, Figure 1 and 2 As shown, the top surface of the glass converter block 2 further has a solder pad 6 surrounded by a solder resist layer 5 .

[0055] Specifically, the introduction of the solder resist layer 5 solves the problem that the conventional pad 6 is easily affected by the external environment. It acts as a protective barrier, effectively preventing the solder from diffusing to unnecessary areas during the soldering process when the processing unit 3 is interconnected by soldering, thereby ensuring the accuracy and reliability of soldering. At the same time, the solder resist layer 5 also plays the role of insulation and moisture resistance, further improving the stability and life of the entire packaging structure.

[0056] It should be noted that there are multiple pads 6 , and they correspond one-to-one to the contacts of the glass transition block 2 .

[0057] In some preferred embodiments, the processing unit 3 is one of chips such as FPGA (field programmable gate array), GPU (graphics processing unit), CPU (central processing unit), memory, I / O chip, EIC (edge ​​intelligence chip), etc.

[0058] Specifically, the packaging structure with interconnection channels in the embodiment of the present application utilizes the glass conversion block 2 to realize the interconnection between different processing units 3, providing a flexible solution for the integration of different types of processing units 3. By selecting a suitable combination of processing units 3, a high-performance computing system that adapts to different application scenarios can be constructed.

[0059] In some preferred embodiments, Figure 4 As shown, the package structure with interconnection channels also includes: The second glass substrate 7 is fixed on the top surface of the first glass substrate 1 and has a plurality of second through-glass holes 71 corresponding one-to-one to the first through-glass holes 12 and a plurality of third through-glass holes 72 corresponding to the contacts of the glass transition block 2. The second through-glass holes 71 and the third through-glass holes 72 are filled with conductive metal.

[0060] Specifically, in this embodiment, the processing unit 3 is arranged on the top surface of the second glass substrate 7, and is interconnected with the conductive metal in the first glass through hole 12 by connecting the conductive metal in the second glass through hole 71, and is interconnected with the glass conversion block 2 by connecting the conductive metal in the third glass through hole 72.

[0061] More specifically, the second glass substrate 7 provides an additional protective layer for the entire packaging structure, enhancing the stability and anti-interference ability of the structure. It cooperates with the first glass substrate 1 to form a closed space for fixing the glass transition block 2, effectively protecting the internal glass transition block 2. The third glass through hole 72 is specifically set for the contact of the glass transition block 2, providing a direct external connection channel for the glass transition block 2.

[0062] More specifically, the conductive metal may be copper, aluminum or other metal materials with good conductivity, preferably copper, and the filling process may be electroplating, physical vapor deposition (PVD) or chemical vapor deposition (CVD) and the like.

[0063] More specifically, the material of the second glass substrate 7 is the same as that of the first glass substrate 1 .

[0064] More specifically, based on the multi-layer glass structure enclosing the glass transition block 2 from top to bottom, the ability of the packaging structure to resist thermal cycles and mechanical stress can be further improved. On the one hand, it is reflected in that the second glass substrate 7 and the first glass substrate 1 located above and below the glass transition block 2 respectively can generate stresses in opposite directions; on the other hand, it is reflected in that the first glass substrate 1 and the second glass substrate 7 can generate equivalent heat dissipation effects on the upper and lower surfaces of the glass transition block 2, so as to avoid local temperature differences caused by uneven heat dissipation of the glass transition block 2.

[0065] It should be noted that the second glass substrate 7 is bonded to the first glass substrate 1 .

[0066] More specifically, in this embodiment, if Figure 4 As shown, the top surface of the second glass substrate 7 also has a solder pad surrounded by a solder resist layer.

[0067] In some preferred embodiments, the second glass substrate 7 has a dam 73 extending downward in the middle of the bottom surface. The dam 73 is inserted into the embedding groove 11 , and the inner and outer walls are in contact with the outer periphery of the glass transition block 2 and the inner wall of the embedding groove 11 , respectively.

[0068] Specifically, the dam 73 of the second glass substrate 7 not only enhances the fixing effect of the glass transition block 2 , but also provides an additional protection layer for the glass transition block 2 , thereby effectively preventing the glass transition block 2 from being affected by the external environment.

[0069] More specifically, the design of the dam 73 can be implemented in a variety of ways. For example, the dam 73 structure can be directly formed on the second glass substrate 7 using a precise glass etching technique. Another method is to use a special glass molding process to directly shape the desired shape of the dam 73 when manufacturing the second glass substrate 7. In addition, it is also possible to consider using high-strength epoxy resin or other suitable materials to form the dam 73 at the bottom of the second glass substrate 7 through precise mold molding technology.

[0070] More specifically, in some embodiments, the inner and outer walls of the dam 73 may be coated with a thin layer of elastic material, such as silicone, to further enhance the sealing effect between the dam 73 and the glass transition block 2 and the embedding groove 11, while also being able to buffer possible micro-stresses and improve the stability and reliability of the overall structure.

[0071] More specifically, the contact between the inner wall of the dam 73 and the outer periphery of the glass transition block 2 can prevent the glass transition block 2 from moving in the horizontal direction, thereby enhancing the stability of the glass transition block 2 .

[0072] In some preferred embodiments, the thickness of a portion of the second glass substrate 7 located inside the dam 73 is smaller than the thickness of a portion located outside the dam 73 .

[0073] Specifically, Figure 4 As shown, in this embodiment, the height of the glass conversion block 2 is greater than the depth of the embedding groove 11, and the thickness of the portion of the second glass substrate 7 located inside the dam 73 is smaller than the thickness of the portion located outside the dam 73, so that the top surface of the second glass substrate 7 can be kept flat, so that multiple processing units 3 can be installed in a flat manner, making the entire packaging structure more compact.

[0074] like Figure 5 As shown, in some other embodiments, the packaging structure with interconnection channels further includes: A second metal layer 8 is provided on the top surface of the second glass substrate 7 and is located in the area enclosed by the contacts of the glass transition block 2; The third glass substrate 9 is disposed on the top surface of the second glass substrate 7 and has a groove in the middle, and the second metal layer 8 is located in the groove; The third glass substrate 9 further has a plurality of fourth through-glass holes 91 corresponding one-to-one to the first through-glass holes 12 and a plurality of fifth through-glass holes 92 corresponding to the contacts of the glass transition block 2 . The fourth through-glass holes 91 and the fifth through-glass holes 92 are filled with conductive metal.

[0075] Specifically, the second metal layer 8 is made of the same material as the first metal layer 4 .

[0076] More specifically, the second metal layer 8 is located above the glass transition block 2, which can further improve the thermal conductivity of the packaging structure with interconnected channels of the embodiment of the present application, further reduce electromagnetic interference, and improve signal integrity. In conjunction with the first metal layer 4, it can prevent the transmitted signal of the glass transition block 2 from being interfered with by the upper and lower signals.

[0077] More specifically, in this embodiment, the top surface of the third glass substrate 9 also has a pad surrounded by a solder resist layer.

[0078] Second, please refer to Figure 6 Some embodiments of the present application further provide a method for preparing a packaging structure with interconnected channels, which is used to prepare a packaging structure with interconnected channels as provided in the first aspect, and the preparation method comprises the following steps: S1, preparing a first glass substrate 1, and punching the first glass substrate 1 to form an embedding groove 11 and a plurality of first glass through holes 12; S2, filling the first through-glass hole 12 with a conductive metal; S3, preparing the glass transition block 2 according to the bonding requirements of the processing unit 3, and fixing the glass transition block 2 in the embedding groove 11; S4, bonding a plurality of processing units 3 onto the first glass substrate 1, so that the plurality of processing units 3 are interconnected with the conductive metal in the first through-glass hole 12, and the plurality of processing units 3 are interconnected through the glass transition block 2.

[0079] The packaging structure manufactured by the preparation method of the packaging structure with interconnected channels in the embodiment of the present application combines a glass substrate, a glass conversion block 2 and multiple processing units 3, realizing a highly integrated, high-performance and high-reliability packaging solution, which can effectively resist the influence of thermal cycles and mechanical stresses, and solve the problems of solder joint breakage or substrate warping that are prone to occur when the packaging structure is used under temperature changes or mechanical stresses, thereby greatly improving the reliability and durability of the product.

[0080] In the description of this specification, the description with reference to the terms "one embodiment", "certain embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0081] The above are only some embodiments of the present invention. For those skilled in the art, several modifications and improvements can be made without departing from the creative concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A packaging structure with interconnected channels, characterized in that: The packaging structure with interconnected channels includes: A first glass substrate having an embedding groove on its top surface; A glass conversion block is installed in the embedding groove; a plurality of processing units, all disposed on the top surface of the first glass substrate and interconnected through the glass conversion block; The first glass substrate also has a plurality of first through-glass holes and conductive metals filled in the first through-glass holes, and the processing unit is also interconnected with the conductive metals in the first through-glass holes.

2. The package structure with interconnected channels according to claim 1, characterized in that: A first metal layer is provided at the bottom of the embedded groove.

3. The package structure with interconnection channels according to claim 1, characterized in that: The glass transition block includes an insulating layer, a glass transition block wiring layer, a glass transition block substrate and a bonding layer which are arranged in sequence from top to bottom.

4. The packaging structure with interconnection channels according to claim 3, characterized in that: The bonding layer and the insulating layer are made of the same material.

5. The package structure with interconnection channels according to claim 3, characterized in that: The top surface of the glass converter block also has a solder pad surrounded by a solder resist layer.

6. The package structure with interconnection channels according to claim 1, characterized in that: The processing unit is one of FPGA, GPU, CPU, memory, I / O chip, and EIC.

7. The package structure with interconnection channels according to claim 1, characterized in that: The packaging structure with interconnected channels also includes: The second glass substrate is fixed on the top surface of the first glass substrate and has a plurality of second through-glass holes corresponding to the first through-glass holes and a plurality of third through-glass holes corresponding to the contacts of the glass transition block, and the second through-glass holes and the third through-glass holes are filled with conductive metal.

8. The package structure with interconnection channels according to claim 7, characterized in that: A dam extending downward is provided in the middle of the bottom surface of the second glass substrate. The dam is inserted into the embedding groove, and the inner and outer walls of the dam are in contact with the outer periphery of the glass transition block and the inner wall of the embedding groove respectively.

9. The package structure with interconnection channels according to claim 8, characterized in that: A portion of the second glass substrate located inside the dam has a thickness smaller than a portion of the second glass substrate located outside the dam.

10. A method for preparing a packaging structure with interconnected channels, used for preparing a packaging structure with interconnected channels as claimed in any one of claims 1 to 9, characterized in that: The preparation method comprises the following steps: Preparing a first glass substrate, and punching the first glass substrate to form an embedding groove and a plurality of first glass through holes; Filling a conductive metal in the first through-glass hole; preparing a glass transition block according to the bonding requirements of the processing unit, and fixing the glass transition block in the embedding groove; A plurality of processing units are bonded over the first glass substrate so that the plurality of processing units are interconnected with the conductive metal in the first through-glass vias and the plurality of processing units are interconnected through the glass transition block.

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