Novel magnetoelectric coupling memory and preparation method thereof

Abstract

The invention provides a novel magnetoelectric coupling memory and a preparation method thereof. The novel magnetoelectric coupling memory sequentially comprises a substrate, bottom electrode metal, a magnetic vibrator transmission layer, a first metal electrode, a spin current injection structure, a plurality of grid electrodes and a spin current detection structure from top to bottom, the bottom electrode metal is arranged on the substrate; the bottom electrode metal is provided with the magnetic vibrator transmission layer and the first metal electrode; the spin current injection structure, the plurality of grid electrodes and the spin current detection structure are sequentially arranged on the magneton transmission layer along the magneton transmission direction; wherein the first metal electrode and any grid electrode form a device for writing information; the spin current injection structure, the magnetic vibrator transmission layer, the grid electrode to be read and the spin current detection structure form a device used for reading information. According to the technical scheme provided by the invention, the information can be read and written in the memory by utilizing the magnetic vibrator.

Description

Technical Field

[0001] This document relates to the field of memory technology, and in particular to a novel magnetoelectric coupling memory and a preparation method thereof. Background Art

[0002] Traditional NAND FLASH memory is widely used due to its low cost and three-dimensional integration. However, NAND FLASH has high energy consumption and slow speed in reading and writing, which makes it mainly suitable for external data storage. Therefore, how to optimize NAND FLASH memory in view of the above problems has become the focus of attention.

[0003] However, the existing writing method of NAND FLASH devices is to inject high current hot electrons into the gate dielectric, etc. The above process takes a long time to write, reduces the writing efficiency of the memory, has high energy consumption, and has low durability. When reading data, the series channel is longer, so the resistance is larger and the energy consumption is also higher. Summary of the invention

[0004] In view of the above analysis, the present application aims to propose a novel magnetoelectric coupling memory and a preparation method thereof to solve at least one of the above problems.

[0005] In a first aspect, one or more embodiments of this specification provide a novel magnetoelectric coupling memory, comprising: a substrate, a bottom electrode metal, a magnon transport layer, a first metal electrode, a spin current injection structure, a plurality of gates, and a spin current detection structure;

[0006] The bottom electrode metal is disposed on the substrate;

[0007] The bottom electrode metal is provided with the magnetic vibrator transmission layer and the first metal electrode; and

[0008] The spin current injection structure, the plurality of gates, and the spin current detection structure are sequentially arranged on the magnon transmission layer along the magnon transmission direction;

[0009] Among them, the first metal electrode and any of the gates constitute a device for writing information; the spin current injection structure, the magnetic oscillator transport layer, the gate to be read and the spin current detection structure constitute a device for reading information.

[0010] Furthermore, when reading information, the spin current injection structure generates a spin current;

[0011] The spin current enters the magnon transport layer to induce the generation of magnons; and

[0012] A voltage is applied to each of the gates, so that the magnetic oscillators are regulated by the gate voltage during the process of flowing from the spin current injection structure to the spin current detection structure.

[0013] Further, the plurality of gates include: a gate to be read and other gates, and the gate includes: a magnetoelectric coupling layer; and

[0014] The other gates are applied with a first voltage, and the gate to be read is applied with a second voltage;

[0015] The first voltage puts the magnetic oscillator in a saturated state, and the second voltage and the polarization voltage of the magnetoelectric coupling layer together put the magnetic oscillator in a saturated state or a non-saturated state.

[0016] Further, the spin current injection structure comprises: a first spin-orbit coupling layer and a second metal electrode;

[0017] The first spin-orbit coupling layer is disposed on the magnon transport layer;

[0018] The second metal electrode is disposed on the spin-orbit coupling layer;

[0019] injecting current into the first spin-orbit coupling layer through the second metal electrode; and

[0020] The first spin-orbit coupling layer generates the spin current in a preset direction.

[0021] Furthermore, the methods of inducing magnetic oscillators include: spin Hall effect / Rashba effect of heavy metal / antiferromagnetic / topological materials or spin transfer torque of magnetic tunnel junction / spin valve and antenna.

[0022] Further, the spin current detection structure includes: a second spin-orbit coupling layer and a third metal electrode;

[0023] The second spin-orbit coupling layer is disposed on the magnon transport layer;

[0024] The third metal electrode is disposed on the second spin-orbit coupling layer;

[0025] injecting current into the second spin-orbit coupling layer through the second metal electrode; and

[0026] According to the inverse spin Hall effect, a corresponding electrical signal is read out through the second spin-orbit coupling layer.

[0027] Furthermore, methods for reading out corresponding electrical signals include: inverse spin Hall effect / inverse Rashba effect or magnetic tunnel junction / spin valve of heavy metal / antiferromagnetic / topological materials and antenna.

[0028] Furthermore, the gate includes: a magnetoelectric coupling layer and a gate electrode; and

[0029] When writing information, a voltage is applied between the gate electrode and the first metal electrode to flip the magnetoelectric coupling layer to a specified polarization state so as to write a different state.

[0030] Further, the spin current injection structure includes: a first spin-orbit coupling layer and a second metal electrode, and the spin current detection structure includes: a second spin-orbit coupling layer and a third metal electrode;

[0031] The materials of the first spin-orbit coupling layer and the second spin-orbit coupling layer include: heavy metals Pt, Ta, W and their alloys, antiferromagnetic IrMn, FeMn, PtMn, PdMn, light metal oxide CuO x 、TiO x , topological insulators BiSe, BiSb, BiSbTe, oxide two-dimensional electron gas SrTiO3 / LaAlO3, SrTiO3 / AlOx, KTaO3 / LaAlO3, KTaO3 / LaVO3, two-dimensional semi-metal materials MoTe2, PtSe2, PtTe2, one or more of WTe2, with a thickness of 1-20nm;

[0032] The gate comprises: a magnetoelectric coupling layer;

[0033] The material of the magnetoelectric coupling layer includes one or more of BiFeO3, BiLaFeO3, TbMnO3, MbTiO3, CaMnO3, LuMnO3, BaSrMnO3, HfZrO, HfO2, and the thickness thereof is 2-100 nm;

[0034] The material of the magnon transmission layer includes: one or more of YIG, CoFeB, CoFe, Co / Pt, CoFeAl, Co / Pd and composite materials thereof, and the thickness thereof is 0.5-20 nm;

[0035] The material of the bottom electrode metal includes: one or more of SrTiO3, LaSrMnO, Pt, and its thickness is 1-50nm;

[0036] The materials of the first metal electrode, the second metal electrode and the third metal electrode include: one or more of Ru, Ta, Ti, Cr, Pt, Au, CuN, TiN and their composite materials, and their thickness is 2-200nm.

[0037] In a second aspect, one or more embodiments of this specification provide a method for manufacturing a memory as described in any one of the first aspects, comprising the following steps:

[0038] Prepare front-end wafers;

[0039] Depositing a film stack by magnetron sputtering on the front-end wafer, wherein the deposited film stack includes: a substrate, a bottom electrode metal, a magnetic vibrator transmission layer, a magnetoelectric coupling layer and a metal electrode layer;

[0040] Ion beam / reactive ion beam etching of columnar structures and magnetron sputtering deposition of insulating materials for isolation;

[0041] Ion beam / reactive ion beam etching of the grooved structure and magnetron sputtering deposition of the spin-orbit coupling layer;

[0042] Ion beam / reactive ion beam etching of the groove structure and magnetron sputtering deposition of insulating material isolation;

[0043] Ion beam / reactive ion beam etching of through-hole structures;

[0044] Magnetron sputtering / electron beam evaporation of metal electrodes.

[0045] Compared with the prior art, this application can at least achieve the following technical effects:

[0046] During reading, the spin current injection structure is used to generate magnetic oscillators, which are transmitted in the magnetic oscillator transmission layer. At this time, by applying a voltage to the gate to be read, the corresponding electrical signal can be read in the spin current detection structure. It can be seen that the above structure can realize the use of magnetic oscillators to read and write information in the memory. Due to the ultra-low energy consumption of magnetic oscillators, the energy consumption of the readout process of this application is lower than that of the prior art. In addition, setting multiple gates can increase the storage density of the memory. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate one or more embodiments of this specification or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this specification. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0048] Figure 1 A schematic diagram of the structure of a novel magnetoelectric coupling memory provided for one or more embodiments of this specification;

[0049] Figure 2 One or more embodiments of this specification provide Figure 1 Flow chart of the method for preparing the memory;

[0050] Figure 3 A schematic diagram of the structure of a deposition film stack provided for one or more embodiments of the present specification. DETAILED DESCRIPTION

[0051] In order to enable those skilled in the art to better understand the technical solutions in one or more embodiments of this specification, the following will be combined with the drawings in one or more embodiments of this specification to clearly and completely describe the technical solutions in one or more embodiments of this specification. Obviously, the described embodiments are only part of the embodiments of this specification, not all of the embodiments. Based on one or more embodiments of this specification, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of this document.

[0052] The present application embodiment provides a novel magnetoelectric coupling memory, such as Figure 1 As shown, including:

[0053] Substrate 101, bottom electrode metal 102, magnon transport layer 103, multiple gates 104, spin current injection structure 105, spin current detection structure 106 and first metal electrode 107;

[0054] A bottom electrode metal 102 is disposed on the substrate 101;

[0055] A magnon transport layer 103 and a first metal electrode 107 are disposed on the bottom electrode metal 102;

[0056] A spin current injection structure 105, a plurality of gates 104, and a spin current detection structure 106 are sequentially arranged on the magnon transmission layer 103 along the magnon transmission direction;

[0057] The first metal electrode 107 and the arbitrary gate 104 constitute a device for writing information; the spin current injection structure 105, the magnon transport layer 103, the gate to be read and the spin current detection structure 106 constitute a device for reading information.

[0058] In the embodiment of the present application, based on the low energy consumption of magnetic oscillators, magnetic oscillators are used to complete the data reading process. Specifically, during reading, the spin current injection structure is used to generate magnetic oscillators, and the magnetic oscillators are transmitted in the magnetic oscillator transmission layer. At this time, a voltage is applied to the gate to be read, and the corresponding electrical signal can be read in the spin current detection structure.

[0059] In addition, providing multiple gates can improve the storage density of the memory. Specifically, the number of gates in the memory can be adjusted according to the actual scenario to obtain a reasonable storage density.

[0060] In the embodiment of the present application, the spin current injection structure 105 includes: a first spin-orbit coupling layer 1051 and a second metal electrode 1052;

[0061] The first spin-orbit coupling layer 1051 is disposed on the magnon transport layer 103;

[0062] The second metal electrode 1052 is disposed on the spin-orbit coupling layer 1051;

[0063] Injecting current into the first spin-orbit coupling layer 1051 through the second metal electrode 1052;

[0064] The first spin-orbit coupling layer 1051 generates a spin current in a preset direction.

[0065] In the embodiment of the present application, the spin current detection structure 106 includes: a second spin-orbit coupling layer 1061 and a third metal electrode 1062;

[0066] The second spin-orbit coupling layer 1061 is disposed on the magnon transport layer 103;

[0067] The third metal electrode 1062 is disposed on the second spin-orbit coupling layer 1601;

[0068] injecting current into the second spin-orbit coupling layer 1061 through the second metal electrode 1062;

[0069] According to the inverse spin Hall effect, the corresponding electrical signal is read out through the second spin-orbit coupling layer 1061 .

[0070] Based on the above structure, when reading data, the working process of the memory is:

[0071] By injecting current, the spin current injection structure 105 generates a spin current. The spin current enters the magnon transport layer 103, inducing the generation of magnons. A voltage is applied to each gate 104, so that the magnons are regulated by the gate voltage during the process of flowing from the spin current injection structure to the spin current detection structure. The spin current detection structure 106 reads the electrical signal stored in the gate to be read according to the influence of the voltage applied to the gate to be read on the magnon.

[0072] In the embodiment of the present application, the multiple gates include: a gate to be read and other gates, and the gates include: a magnetoelectric coupling layer; the other gates apply a first voltage, and the gate to be read applies a second voltage; the first voltage puts the magnetic oscillator in a saturated state, and the second voltage and the polarization voltage of the magnetoelectric coupling layer together put the magnetic oscillator in a saturated state or an unsaturated state. Different voltages will have different degrees of influence on the amplitude of the magnetic oscillator. Based on this principle, the voltage applied to each gate can be adjusted so that the voltage of the gate to be read is different from that of other gates, so that the spin current detection structure 106 can capture the electrical signal of the gate to be read.

[0073] Specifically, a read voltage V is applied to the gate to be read. read , the other gate is applied with a saturation voltage V sat ,

[0074] During reading, the other gates are in a saturated state for regulating the magnetic oscillator, and the gate to be read is in a saturated state according to the read voltage V read The polarization state of the magnetoelectric coupling layer of the gate generates saturation or unsaturation control on the magnetic oscillator passing through the gate to be read, so the polarization state of the gate to be read can be determined according to the amplitude of the spin current detection structure 106, thereby determining the storage state. It should be noted that the saturation or unsaturation control of the gate to be read makes the magnetic oscillator corresponding to the gate to be read have two states, which just correspond to 0 and 1 in binary.

[0075] In the embodiment of the present application, the method of inducing magnons includes: spin Hall effect / Rashba effect of heavy metal / antiferromagnetic / topological materials or spin transfer torque of magnetic tunnel junction / spin valve and antenna. Among them, the antenna is the transmission medium of microwave signal, that is, the magnon injection is realized by microwave signal injection.

[0076] Accordingly, the method of reading out the corresponding electrical signal includes: inverse spin Hall effect / inverse Rashba effect or magnetic tunnel junction / spin valve of heavy metal / antiferromagnetic / topological materials and antenna. Among them, the antenna is the transmission medium of microwave signal, that is, the magnetic vibrator readout is realized in the form of microwave signal.

[0077] In the embodiment of the present application, the gate 104 includes: a magnetoelectric coupling layer 1401 and a gate electrode 1402. When writing information, a voltage is applied between the gate electrode 1042 and the first metal electrode 107 to flip the magnetoelectric coupling layer 1401 to a specified polarization state to write a different state. However, the prior art uses hot electrons to inject into the gate dielectric, which requires a process of exciting hot electrons. The time to flip the magnetoelectric coupling layer is much shorter than the time to excite hot electrons. Therefore, the writing speed of the present application is faster than that of the prior art.

[0078] In the embodiment of the present application, the materials of the first spin-orbit coupling layer and the second spin-orbit coupling layer include: heavy metals Pt, Ta, W and their alloys, antiferromagnetic IrMn, FeMn, PtMn, PdMn, light metal oxide CuO x 、TiO x , topological insulators BiSe, BiSb, BiSbTe, oxide two-dimensional electron gas SrTiO3 / LaAlO3, SrTiO3 / AlOx, KTaO3 / LaAlO3, KTaO3 / LaVO3, two-dimensional semi-metal materials MoTe2, PtSe2, PtTe2, one or more of WTe2, with a thickness of 1-20nm;

[0079] In the embodiment of the present application, the magnetoelectric coupling layer material includes: one or more of BiFeO3, BiLaFeO3, TbMnO3, MbTiO3, CaMnO3, LuMnO3, BaSrMnO3, HfZrO, HfO2, and its thickness is 2-100nm;

[0080] In the embodiment of the present application, the material of the magnetic oscillator transport layer includes: one or more of YIG, CoFeB, CoFe, Co / Pt, CoFeAl, Co / Pd and composite materials thereof, and the thickness thereof is 0.5-20 nm;

[0081] In the embodiment of the present application, the material of the bottom electrode metal includes: one or more of SrTiO3, LaSrMnO, Pt, and the thickness thereof is 1-50 nm;

[0082] In an embodiment of the present application, the materials of the first metal electrode, the second metal electrode and the third metal electrode include: one or more of Ru, Ta, Ti, Cr, Pt, Au, CuN, TiN and their composite materials, and their thickness is 2-200nm.

[0083] The present application embodiment provides a manufacturing method for the memory described in any of the above embodiments, such as Figure 2 As shown, the following steps are included:

[0084] Step 1: Prepare the front-end wafer.

[0085] Step 2: depositing a film stack by magnetron sputtering on the front-end wafer.

[0086] In the embodiment of the present application, the deposition film stack is as follows Figure 3 As shown, from bottom to top, there are: substrate 101, bottom electrode metal 102, magnetic vibrator transmission layer 103, magnetoelectric coupling layer 104A and metal electrode layer 104B. Among them, the magnetoelectric coupling layer 104A is used to make the magnetoelectric coupling layer 1041 of the gate 104, and the metal electrode layer 104B is used to make the gate electrode 1042.

[0087] Step 3: Ion beam / reactive ion beam etching of the columnar structure and magnetron sputtering deposition of insulating material for isolation.

[0088] Step 4: ion beam / reactive ion beam etching the groove structure, and magnetron sputtering deposition of the spin-orbit coupling layer.

[0089] Step 5: Ion beam / reactive ion beam etching the groove structure, and magnetron sputtering deposition of insulating material for isolation.

[0090] Step 6: Ion beam / reactive ion beam etching of through-hole structures.

[0091] Step 7: magnetron sputtering / electron beam evaporation of metal electrodes.

[0092] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0093] One or more embodiments of the present specification may be described in the general context of computer-executable instructions executed by a computer, such as program modules. Generally, program modules include routines, programs, objects, components, data structures, etc. that perform specific tasks or implement specific abstract data types. One or more embodiments of the present specification may also be practiced in distributed computing environments where tasks are performed by remote processing devices connected through a communication network. In a distributed computing environment, program modules may be located in local and remote computer storage media, including storage devices.

[0094] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0095] The above description is only an embodiment of this document and is not intended to limit this document. For those skilled in the art, this document may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this document should be included in the scope of the claims of this document.

Claims

1. A novel magnetoelectric coupling memory, characterized in that: include: A substrate, a bottom electrode metal, a magnon transport layer, a first metal electrode, a spin current injection structure, a plurality of gates and a spin current detection structure; The bottom electrode metal is disposed on the substrate; The bottom electrode metal is provided with the magnetic vibrator transmission layer and the first metal electrode; and The spin current injection structure, the plurality of gates, and the spin current detection structure are sequentially arranged on the magnon transmission layer along the magnon transmission direction; Among them, the first metal electrode and any gate constitute a device for writing information; the spin current injection structure, the magnetic oscillator transmission layer, the gate to be read and the spin current detection structure constitute a device for reading information.

2. The memory according to claim 1, characterized in that: When reading information, the spin current injection structure generates a spin current; The spin current enters the magnon transport layer to induce the generation of magnons; and A voltage is applied to each of the gates, so that the magnetic oscillators are regulated by the gate voltage during the process of flowing from the spin current injection structure to the spin current detection structure.

3. The memory according to claim 2, characterized in that: The plurality of gates include: a gate to be read and other gates, the gates include: a magnetoelectric coupling layer; and The other gates are applied with a first voltage, and the gate to be read is applied with a second voltage; and The first voltage puts the magnetic oscillator in a saturated state, and the second voltage and the polarization voltage of the magnetoelectric coupling layer together put the magnetic oscillator in a saturated state or a non-saturated state.

4. The memory according to claim 2, characterized in that: The spin current injection structure comprises: a first spin-orbit coupling layer and a second metal electrode; The first spin-orbit coupling layer is disposed on the magnon transport layer; The second metal electrode is disposed on the spin-orbit coupling layer; injecting current into the first spin-orbit coupling layer through the second metal electrode; and The first spin-orbit coupling layer generates the spin current in a preset direction.

5. The memory according to claim 2, characterized in that: Methods for inducing magnons include: spin Hall effect / Rashba effect of heavy metal / antiferromagnetic / topological materials or spin transfer torque of magnetic tunnel junction / spin valve and antenna.

6. The memory according to claim 2, characterized in that: The spin current detection structure comprises: a second spin-orbit coupling layer and a third metal electrode; The second spin-orbit coupling layer is disposed on the magnon transport layer; The third metal electrode is disposed on the second spin-orbit coupling layer; injecting current into the second spin-orbit coupling layer through the second metal electrode; and According to the inverse spin Hall effect, a corresponding electrical signal is read out through the second spin-orbit coupling layer.

7. The memory according to claim 6, characterized in that: Methods for reading out the corresponding electrical signals include: inverse spin Hall effect / inverse Rashba effect or magnetic tunnel junction / spin valve of heavy metal / antiferromagnetic / topological materials and antenna.

8. The memory according to claim 1, characterized in that: The gate comprises: a magnetoelectric coupling layer and a gate electrode; and When writing information, a voltage is applied between the gate electrode and the first metal electrode to flip the magnetoelectric coupling layer to a specified polarization state so as to write a different state.

9. The memory according to claim 1, characterized in that: The spin current injection structure includes: a first spin-orbit coupling layer and a second metal electrode, and the spin current detection structure includes: a second spin-orbit coupling layer and a third metal electrode; The materials of the first spin-orbit coupling layer and the second spin-orbit coupling layer include: heavy metals Pt, Ta, W and their alloys, antiferromagnetic IrMn, FeMn, PtMn, PdMn, light metal oxide CuO x 、TiO x , topological insulators BiSe, BiSb, BiSbTe, oxide two-dimensional electron gas SrTiO3 / LaAlO3, SrTiO3 / AlOx, KTaO3 / LaAlO3, KTaO3 / LaVO3, two-dimensional semi-metal materials MoTe2, PtSe2, PtTe2, one or more of WTe2, with a thickness of 1-20nm; The gate comprises: a magnetoelectric coupling layer; The material of the magnetoelectric coupling layer includes one or more of BiFeO3, BiLaFeO3, TbMnO3, MbTiO3, CaMnO3, LuMnO3, BaSrMnO3, HfZrO, HfO2, and the thickness thereof is 2-100 nm; The material of the magnetic oscillator transmission layer includes: one or more of YIG, CoFeB, CoFe, Co / Pt, CoFeAl, Co / Pd and composite materials thereof, and the thickness thereof is 0.5-20 nm; The material of the bottom electrode metal includes: one or more of SrTiO3, LaSrMnO, Pt, and the thickness thereof is 1-50 nm; and The materials of the first metal electrode, the second metal electrode and the third metal electrode include: one or more of Ru, Ta, Ti, Cr, Pt, Au, CuN, TiN and their composite materials, and their thickness is 2-200nm.

10. A method for manufacturing a memory according to any one of claims 1 to 9, characterized in that: The following steps are involved: Prepare front-end wafers; Depositing a film stack by magnetron sputtering on the front-end wafer, wherein the deposited film stack includes: a substrate, a bottom electrode metal, a magnetic vibrator transmission layer, a magnetoelectric coupling layer and a metal electrode layer; Ion beam / reactive ion beam etching of columnar structures and magnetron sputtering deposition of insulating materials for isolation; Ion beam / reactive ion beam etching of the grooved structure and magnetron sputtering deposition of the spin-orbit coupling layer; Ion beam / reactive ion beam etching of the groove structure and magnetron sputtering deposition of insulating material isolation; Ion beam / reactive ion beam etching of via structures; and Magnetron sputtering / electron beam evaporation of metal electrodes.

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