Display panel, display device and manufacturing method of display panel

Abstract

The embodiment of the invention provides a display panel, a display device and a manufacturing method of the display panel. The display panel comprises a substrate, a light-emitting layer and a thermoelectric unit, the light-emitting layer is arranged on one side of the substrate and comprises a plurality of light-emitting units which are arranged at intervals; the thermoelectric unit is arranged on the side, away from the substrate, of the light emitting layer and comprises a first conductive part, a second conductive part and a semiconductor part located between the first conductive part and the second conductive part which are sequentially arranged on the side, away from the substrate, of the light emitting layer; wherein the semiconductor part is electrically connected with the first conductive part and the second conductive part, and the semiconductor part comprises an electronic type semiconductor part and a hole type semiconductor part which are adjacently arranged in the direction perpendicular to the thickness direction of the display panel. The light-emitting unit emits light to generate heat, holes and electrons in the semiconductor part are driven by a temperature field to diffuse towards the low-temperature end to form potential difference, so that thermocurrent is generated in the closed loop, and the power consumption of the display panel can be reduced by reutilizing the current generated in the thermoelectric unit.

Description

Technical Field

[0001] The present application relates to the technical field of display devices, and in particular to a display panel, a display device, and a method for manufacturing a display panel. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat panel display devices based on technologies such as Light Emitting Diode (LED) generate heat during use, causing the display panel to have a large energy loss. The high power consumption of the display panel is an urgent problem to be solved. Summary of the invention

[0003] The embodiments of the present application provide a display panel, a display device and a method for manufacturing a display panel, aiming to reduce the power consumption of the display panel.

[0004] An embodiment of the first aspect of the present application provides a display panel, comprising: a substrate, a light-emitting layer and a thermoelectric unit; the light-emitting layer is arranged on one side of the substrate, and the light-emitting layer includes a plurality of light-emitting units arranged at intervals; the thermoelectric unit is arranged on the side of the light-emitting layer away from the substrate, and the thermoelectric unit includes a first conductive part, a second conductive part, and a semiconductor part located between the first conductive part and the second conductive part, which are sequentially arranged along the side away from the substrate; wherein the semiconductor part is electrically connected to the first conductive part and the second conductive part, and the semiconductor part includes an electron-type semiconductor part and a hole-type semiconductor part which are adjacently arranged along a direction perpendicular to the thickness of the display panel.

[0005] According to an embodiment of the present application, the display panel further includes a first encapsulation layer for encapsulating the light-emitting unit, and the thermoelectric unit is arranged on a side of the first encapsulation layer away from the light-emitting unit.

[0006] According to an embodiment of the present application, the display panel also includes a second packaging layer, which is located on the side of the first conductive part away from the first packaging layer. The second packaging layer is provided with multiple first openings extending along the thickness direction of the display panel, and each semiconductor part is located in the first opening.

[0007] According to an embodiment of the present application, the encapsulation layer also includes a third encapsulation layer, the third encapsulation layer is located on the side of the second encapsulation layer away from the substrate, the second conductive portion is located between the second encapsulation layer and the third encapsulation layer, or the second conductive portion is located on the side of the third encapsulation layer away from the second encapsulation layer, the third encapsulation layer includes a second opening, the first opening and the second opening are connected, and the semiconductor portion is electrically connected to the second conductive portion through the second opening.

[0008] According to an embodiment of the present application, a size of the semiconductor portion along a thickness direction of the display panel is greater than a size of the first conductive portion and / or the second conductive portion along the thickness direction of the display panel.

[0009] According to an embodiment of the present application, the display panel includes a plurality of thermoelectric units, and the first conductive portions of the plurality of thermoelectric units are arranged at intervals from each other, or the first conductive portions of the plurality of thermoelectric units are arranged continuously over the entire surface; and / or the second conductive portions of the plurality of thermoelectric units are arranged at intervals from each other, or the second conductive portions of the plurality of thermoelectric units are arranged continuously over the entire surface.

[0010] According to an embodiment of the present application, an orthographic projection of the semiconductor portion on the substrate at least partially overlaps with an orthographic projection of the light emitting unit on the substrate.

[0011] According to an embodiment of the present application, the display panel includes a plurality of thermoelectric units, and the electron-type semiconductor portion and the hole-type semiconductor portion in at least one thermoelectric unit are located on a side of the same light-emitting unit away from the substrate.

[0012] According to an embodiment of the present application, the orthographic projection of the light emitting unit on the substrate is located within the orthographic projection of the electron-type semiconductor portion or the hole-type semiconductor portion on the substrate.

[0013] According to an embodiment of the present application, the display panel also includes a pixel definition layer, the pixel definition layer includes a pixel defining portion and a pixel opening formed by the pixel defining portion, at least part of the light-emitting unit is located in the pixel opening, and at least part of the semiconductor portion is located on the side of the pixel defining portion away from the substrate.

[0014] According to an embodiment of the present application, the pixel defining portion includes multiple first segments, the first segment is located between two adjacent pixel openings, and the electron-type semiconductor portion and the hole-type semiconductor portion in at least one thermoelectric unit are located on the side of the same first segment away from the substrate.

[0015] According to an embodiment of the present application, an orthographic projection of the first conductive portion and / or the second conductive portion on the substrate at least partially overlaps with an orthographic projection of the pixel defining portion on the substrate.

[0016] According to an embodiment of the present application, the semiconductor portion includes a light-transmitting material; and / or the first conductive portion includes a light-transmitting material; and / or the second conductive portion includes a light-transmitting material.

[0017] An embodiment of the second aspect of the present application further provides a display device, comprising the display panel of any one of the above-mentioned first aspects.

[0018] The third aspect of the present application also provides a method for manufacturing a display panel, including:

[0019] A light-emitting layer is formed on one side of the substrate, wherein the light-emitting layer includes a plurality of light-emitting units arranged at intervals;

[0020] forming a first conductive portion on a side of the light emitting layer away from the substrate;

[0021] Forming a semiconductor portion on the side of the first conductive portion away from the substrate, the semiconductor portion comprising an electron-type semiconductor portion and a hole-type semiconductor portion adjacently arranged in a direction perpendicular to the thickness of the display panel;

[0022] A second conductive portion is formed on the side of the semiconductor portion facing away from the substrate, and the first conductive portion, the second conductive portion, the electron-type semiconductor portion and the hole-type semiconductor portion form a thermoelectric unit.

[0023] According to an embodiment of the present application, the step of forming a semiconductor portion on a side of the first conductive portion facing away from the substrate includes:

[0024] forming a second packaging layer on a side of the first conductive portion facing away from the substrate;

[0025] Patterning the second encapsulation layer to form a first opening extending along a thickness direction of the display panel;

[0026] A semiconductor portion located in the first opening is formed on the side of the first conductive portion away from the substrate.

[0027] According to an embodiment of the present application, the step of forming a semiconductor portion on a side of the first conductive portion facing away from the substrate further includes:

[0028] A second packaging layer is formed on the side of the first conductive portion facing away from the substrate, and the second packaging layer surrounds at least a portion of the semiconductor portion to form a first opening.

[0029] In an embodiment of the present application, the thermoelectric unit is located on the side of the light-emitting layer away from the substrate, and a first conductive part, a semiconductor part and a second conductive part are sequentially arranged in a direction away from the substrate, and the semiconductor part includes an electron-type semiconductor part and a hole-type semiconductor part arranged adjacent to each other in a direction perpendicular to the thickness of the display panel, and the two ends of the electron-type semiconductor part and the hole-type semiconductor part in the thickness direction of the display panel are respectively connected to the first conductive part and the second conductive part to form a closed loop. The light-emitting unit emits light to generate heat, and the temperature of the thermoelectric unit is higher on the side close to the light-emitting unit, and the temperature gradually decreases in the direction away from the light-emitting unit. The holes and electrons in the semiconductor part diffuse to the low-temperature end under the drive of the temperature field to form an electric potential difference, thereby generating a thermal current in the closed loop. The secondary use of the current generated in the thermoelectric unit can reduce the power consumption of the display panel. In addition, the thermoelectric unit absorbs part of the heat generated by the light-emitting unit, reduces the reduction in the service life of the light-emitting unit caused by overheating of the light-emitting unit, and improves the performance of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Other features, objects and advantages of the present application will become more apparent by reading the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals represent the same or similar features.

[0031] Figure 1is a structural schematic diagram of a display panel provided in an embodiment of the present application;

[0032] Figure 2 yes Figure 1 Schematic diagram of the structure at AA in the middle;

[0033] Figure 3 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0034] Figure 4 is a structural schematic diagram of another display panel provided in an embodiment of the present application;

[0035] Figure 5 is a structural schematic diagram of another display panel provided in an embodiment of the present application;

[0036] Figure 6 is a structural schematic diagram of another display panel provided in an embodiment of the present application;

[0037] Figure 7 is a structural schematic diagram of another display panel provided in an embodiment of the present application;

[0038] Figure 8 is a flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0039] Figures 9 to 11 It is a schematic diagram of a method for manufacturing a display panel provided in an embodiment of the present application.

[0040] Explanation of the figure marks: 100, substrate; 200, light-emitting unit; 210, first electrode; 220, second electrode; 300, thermoelectric unit; 310, first conductive part; 320, second conductive part; 330, semiconductor part; 331, electron-type semiconductor part; 332, hole-type semiconductor part; 410, first encapsulation layer; 420, second encapsulation layer; 421, first opening; 430, third encapsulation layer; 431, second opening; 500, pixel defining part; 510, pixel opening; 520, first segment; X, thickness direction. DETAILED DESCRIPTION

[0041] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In the detailed description below, many specific details are proposed to provide a comprehensive understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating examples of the present application. In the accompanying drawings and the following description, at least some of the known structures and technologies are not shown to avoid unnecessary ambiguity in the present application; and, for clarity, the size of some structures may be exaggerated. In addition, the features, structures or characteristics described below may be combined in one or more embodiments in any suitable manner.

[0042] In the description of the present application, it should be noted that, unless otherwise specified, "multiple" means more than two; the terms "upper", "lower", "left", "right", "inner", "outer", etc., indicating directions or positional relationships, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0043] The directional words appearing in the following description are all directions shown in the figures, and do not limit the specific structure of the embodiments of the present application. In the description of the present application, it should also be noted that, unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances.

[0044] like Figure 1 and Figure 2 As shown, a display panel provided by an embodiment of the first aspect of the present application includes: a substrate 100, a light-emitting layer and a thermoelectric unit 300; the light-emitting layer is arranged on one side of the substrate 100, and the light-emitting layer includes a plurality of light-emitting units 200 arranged at intervals; the thermoelectric unit 300 is arranged on the side of the light-emitting layer away from the substrate 100, and the thermoelectric unit 300 includes a first conductive part 310 and a second conductive part 320 arranged in sequence along the side away from the substrate 100, and a semiconductor part 330 located between the first conductive part 310 and the second conductive part 320; wherein the semiconductor part 330 is electrically connected to the first conductive part 310 and the second conductive part 320, and the semiconductor part 330 includes an electron-type semiconductor part 331 and a hole-type semiconductor part 332 adjacently arranged along a direction X perpendicular to the thickness of the display panel.

[0045] In this embodiment, the semiconductor will generate thermally excited carriers when heated. If there is a temperature difference between the two ends of the semiconductor, the end with a higher temperature will generate more thermally excited carriers than the end with a lower temperature, and there will be a concentration gradient of thermally excited carriers, that is, along the direction in which the temperature gradient of the semiconductor decreases, the concentration of thermally excited carriers becomes smaller and smaller. Therefore, there will be a phenomenon that thermally excited carriers diffuse from high concentration areas to low concentration areas, thereby generating temperature difference current and potential difference. The concentration of free electrons in the electron-type semiconductor part 331 is much greater than the concentration of holes. That is, in the electron-type semiconductor part 331, free electrons are majority carriers, holes are minority carriers, and the main conduction is by free electrons. The concentration of holes in the hole-type semiconductor part 332 is much greater than the concentration of free electrons. That is, in the hole-type semiconductor part 332, holes are majority carriers, free electrons are minority carriers, and the main conduction is by holes. The thermoelectric unit 300 is located on the side of the light-emitting layer away from the substrate 100, and the first conductive part 310, the semiconductor part 330 and the second conductive part 320 are sequentially arranged in the direction away from the substrate 100. The semiconductor part 330 includes an electron-type semiconductor part 331 and a hole-type semiconductor part 332 arranged adjacent to each other in a direction perpendicular to the thickness direction X of the display panel. The two ends of the electron-type semiconductor part 331 and the hole-type semiconductor part 332 in the thickness direction X of the display panel are respectively connected to the first conductive part 310 and the second conductive part 320 to form a closed loop. The light-emitting unit 200 emits light to generate heat. The temperature of the thermoelectric unit 300 close to the light-emitting unit 200 is higher, and the temperature gradually decreases in the direction away from the light-emitting unit 200. The holes and electrons in the semiconductor part 330 diffuse to the low temperature end under the drive of the temperature field to form a potential difference, thereby generating a thermal current in the closed loop. The secondary use of the current generated in the thermoelectric unit 300 can reduce the power consumption of the display panel. Furthermore, the thermoelectric unit 300 absorbs part of the heat generated by the light emitting unit 200, thereby reducing the reduction in the service life of the light emitting unit 200 caused by overheating of the light emitting unit 200, and improving the performance of the display panel.

[0046] Optionally, a thickness direction X of the display panel is perpendicular to a display surface of the display panel.

[0047] like Figure 2 As shown, in some optional embodiments, the display panel further includes a first encapsulation layer 410 for encapsulating the light emitting unit 200 , and the thermoelectric unit 300 is disposed on a side of the first encapsulation layer 410 away from the light emitting unit 200 .

[0048] In these optional embodiments, the first encapsulation layer 410 can provide encapsulation protection for the light-emitting unit 200, and improve the yield of the light-emitting unit 200 affected by water and oxygen intrusion. The thermoelectric unit 300 is arranged on the side of the first encapsulation layer 410 away from the light-emitting unit 200, and the first encapsulation layer 410 can insulate the thermoelectric unit 300 from the light-emitting unit 200, thereby reducing the probability of the thermoelectric unit 300 and the light-emitting unit 200 being conductive.

[0049] Optionally, the first encapsulation layer 410 includes an inorganic material, so that the first encapsulation layer 410 is thinner to reduce the heat loss of the light emitting unit 200 .

[0050] Optional, such as Figure 2 As shown, a first electrode 210 is disposed on the side of the light-emitting unit 200 facing the substrate 100, and a second electrode 220 is disposed on the side of the light-emitting unit 200 facing away from the substrate 100. The second electrode 220 is located on the side of the first encapsulation layer 410 facing the substrate 100. The first electrode 210 and the second electrode 220 are used to drive the light-emitting unit 200 to emit light.

[0051] like Figure 2 As shown, in some optional embodiments, the display panel also includes a second packaging layer 420, which is located on the side of the first conductive part 310 away from the first packaging layer 410, and the second packaging layer 420 is provided with a plurality of first openings 421 extending along the thickness direction X of the display panel, and each semiconductor part 330 is located in the first opening 421.

[0052] In these optional embodiments, each semiconductor part 330 is at least partially located in the first opening 421, so that the semiconductor part 330 and the second packaging layer 420 are arranged on the same layer, thereby reducing the thickness of the display panel. Each semiconductor part 330 is electrically connected to the first conductive part 310 through the first opening 421. The second packaging layer 420 can reduce the risk of contact short circuit between the semiconductor parts 330, thereby improving the reliability of the thermoelectric unit 300.

[0053] Optionally, the second encapsulation layer 420 includes an organic material, and the second encapsulation layer 420 is filled between the semiconductor portions 330 , so as to planarize the side of the semiconductor portion 330 away from the substrate 100 , thereby facilitating the preparation of subsequent film layers.

[0054] like Figure 2 As shown, in some optional embodiments, the encapsulation layer further includes a third encapsulation layer 430 , which is located on the side of the second encapsulation layer 420 away from the substrate 100 , and the second conductive portion 320 is located between the second encapsulation layer 420 and the third encapsulation layer 430 .

[0055] In these optional embodiments, the second conductive part 320 is located between the second packaging layer 420 and the third packaging layer 430 . The second packaging layer 420 and the third packaging layer 430 can reduce the probability of the second conductive part 320 being conductive with other film layers, thereby improving the reliability of the thermoelectric unit 300 .

[0056] like Figure 3As shown, in some other optional embodiments, the second conductive portion 320 is located on a side of the third packaging layer 430 away from the second packaging layer 420, the third packaging layer 430 includes a second opening 431, the first opening 421 and the second opening 431 are connected, and the semiconductor portion 330 is electrically connected to the second conductive portion 320 through the second opening 431.

[0057] In these optional embodiments, the second conductive portion 320 is disposed on a side of the third encapsulation layer 430 away from the second encapsulation layer, a second opening 431 is provided in the third encapsulation layer 430, and the second opening 431 is connected to the first opening 421, so that the semiconductor portion 330 can be electrically connected to the second conductive portion 320 through the second opening 431. The second conductive portion 320 is disposed on a side of the third encapsulation layer 430 away from the second encapsulation layer 420, which can increase the size of the thermoelectric unit 300 along the thickness direction X of the display panel, thereby increasing the temperature difference of the thermoelectric unit 300 and improving the thermoelectric conversion efficiency.

[0058] like Figure 2 As shown, in some optional embodiments, the size of the semiconductor portion 330 along the thickness direction X of the display panel is greater than the size of the first conductive portion 310 and / or the second conductive portion 320 along the thickness direction X of the display panel.

[0059] In these optional embodiments, the larger dimension X of the semiconductor portion 330 along the thickness direction of the display panel can increase the temperature difference between the two ends of the semiconductor portion 330 and improve the thermoelectric conversion efficiency.

[0060] like Figure 3 and Figure 4 As shown, in some optional embodiments, the display panel includes a plurality of thermoelectric units 300 , and the first conductive portions 310 of the plurality of thermoelectric units 300 are arranged at intervals from each other.

[0061] In these optional embodiments, the first conductive portions 310 of the plurality of thermoelectric units 300 are arranged at intervals, thereby reducing the influence of the first conductive portions 310 on the light extraction efficiency of the light emitting unit 200. Optionally, the orthographic projection of the first conductive portion 310 on the substrate 100 and the upper orthographic projection of the light emitting unit 200 on the substrate 100 are arranged in a staggered manner, thereby preventing the first conductive portion 310 from affecting the light extraction efficiency of the light emitting unit 200.

[0062] like Figure 2 As shown, in some other optional embodiments, the first conductive parts 310 of the plurality of thermoelectric units 300 are disposed continuously over the entire surface.

[0063] In these optional embodiments, the first conductive part 310 is arranged on the entire surface, which can reduce the resistivity of the first conductive part 310 and improve the thermoelectric conversion efficiency of the thermoelectric unit 300. When forming the first conductive part 310, there is no need to form a patterning process for the first conductive part 310, thereby simplifying the preparation process of the first conductive part 310. In addition, the first conductive part 310 can improve the efficiency of absorbing heat from the light-emitting unit 200, reduce the temperature of the display panel, and improve the reliability of the display panel.

[0064] like Figure 3 As shown, in some optional embodiments, the second conductive portions 320 of the plurality of thermoelectric units 300 are spaced apart from each other.

[0065] In these optional embodiments, the second conductive portions 320 of the plurality of thermoelectric units 300 are arranged at intervals, thereby reducing the influence of the second conductive portions 320 on the light extraction efficiency of the light emitting unit 200. Optionally, the orthographic projection of the second conductive portion 320 on the substrate 100 is staggered with the upper orthographic projection of the light emitting unit 200 on the substrate 100, thereby preventing the second conductive portion 320 from affecting the light extraction efficiency of the light emitting unit 200.

[0066] like Figure 2 and Figure 4 As shown, in some other optional embodiments, the second conductive parts 320 of the plurality of thermoelectric units 300 are disposed continuously over the entire surface.

[0067] In these optional embodiments, the second conductive part 320 is arranged on the entire surface, which can reduce the resistivity of the second conductive part 320 and improve the thermoelectric conversion efficiency of the thermoelectric unit 300. When forming the second conductive part 320, there is no need to form a patterning process for the second conductive part 320, thereby simplifying the preparation process of the second conductive part 320. In addition, the second conductive part 320 can improve the efficiency of absorbing heat from the light-emitting unit 200, reduce the temperature of the display panel, and improve the reliability of the display panel.

[0068] like Figure 5 As shown, in some optional embodiments, the orthographic projection of the semiconductor portion 330 on the substrate 100 at least partially overlaps with the orthographic projection of the light emitting unit 200 on the substrate 100 .

[0069] In these optional embodiments, the semiconductor portion 330 is on the side of the light-emitting unit 200 away from the substrate 100, and the temperature of the semiconductor portion 330 toward the light-emitting unit 200 is increased, thereby increasing the temperature difference between the end of the semiconductor portion 330 toward the light-emitting unit 200 and the end away from the light-emitting unit 200, thereby improving the thermoelectric conversion efficiency.

[0070] like Figure 5As shown, in some optional embodiments, the display panel includes a plurality of thermoelectric units 300 , and the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 in at least one thermoelectric unit 300 are located on the side of the same light-emitting unit 200 away from the substrate 100 .

[0071] In these optional embodiments, the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 in at least one thermoelectric unit 300 are located on the side of the same light-emitting unit 200 away from the substrate 100, so that the distance between the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 in the same thermoelectric unit 300 is closer, and the resistivity of the closed loop formed by the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 and the first conductive portion 310 and the second conductive portion 320 is lower, thereby improving the thermoelectric conversion efficiency.

[0072] like Figure 6 As shown, in some optional embodiments, the orthographic projection of the light emitting unit 200 on the substrate 100 is located within the orthographic projection of the electron-type semiconductor portion 331 or the hole-type semiconductor portion 332 on the substrate 100 .

[0073] In these optional embodiments, the orthographic projection of the light-emitting unit 200 on the substrate 100 is located within the orthographic projection of the electron-type semiconductor portion 331 or the hole-type semiconductor portion 332 on the substrate 100, that is, the light-emitting unit 200 is located within the orthographic projection of a semiconductor portion 330 on the substrate 100, so that the size of the electron-type semiconductor portion 331 or the hole-type semiconductor portion 332 along the direction perpendicular to the thickness of the display panel X is larger, the area facing the end of the electron-type semiconductor portion 331 or the hole-type semiconductor portion 332 facing the light-emitting layer and the light-emitting unit 200 is increased, the temperature difference between the two ends of the electron-type semiconductor portion 331 or the hole-type semiconductor portion 332 along the thickness direction X of the display panel is increased, and the thermoelectric conversion efficiency is increased.

[0074] Optional, such as Figure 6 As shown, the orthographic projection of part of the light-emitting unit 200 on the substrate 100 is located within the orthographic projection of the electronic semiconductor portion 331 on the substrate 100, thereby increasing the area facing the end of the electronic semiconductor portion 331 facing the light-emitting layer and the light-emitting unit 200, increasing the temperature difference between the two ends of the electronic semiconductor portion 331 along the thickness direction X of the display panel, and increasing the thermoelectric conversion efficiency.

[0075] Optional, such as Figure 6 As shown, the orthographic projection of part of the light-emitting unit 200 on the substrate 100 is located within the orthographic projection of the hole-type semiconductor portion 332 on the substrate 100, which increases the area facing the end of the hole-type semiconductor portion 332 facing the light-emitting layer and the light-emitting unit 200, increases the temperature difference between the two ends of the hole-type semiconductor portion 332 along the thickness direction X of the display panel, and increases the thermoelectric conversion efficiency.

[0076] like Figure 7 As shown, in some optional embodiments, the display panel also includes a pixel definition layer, the pixel definition layer includes a pixel defining portion 500 and a pixel opening 510 formed by the pixel defining portion 500, at least a portion of the light emitting unit 200 is located in the pixel opening 510, and at least a portion of the semiconductor portion 330 is located on the side of the pixel defining portion 500 facing away from the substrate 100.

[0077] In these optional embodiments, the pixel defining portion 500 of the pixel defining layer encloses a pixel opening 510 to set the light-emitting unit 200 and realize normal light emission of the light-emitting unit 200. In addition, the pixel defining portion 500 defines the setting area of ​​each light-emitting unit 200 to reduce the cross-color defect between each light-emitting unit 200. At least part of the semiconductor portion 330 is located on the side of the pixel defining portion 500 away from the substrate 100, thereby reducing the influence of the semiconductor portion 330 on the light emission of the light-emitting unit 200. In addition, the semiconductor portion 330 is located between adjacent pixel openings 510, thereby blocking part of the large-angle light emitted by the light-emitting unit 200, reducing the crosstalk between different light-emitting units 200, and improving the display effect of the display panel.

[0078] Optionally, since the semiconductor part 330 and the light emitting unit 200 are arranged in a staggered manner, the semiconductor part 330 can be made of a light-shielding material, and the material of the semiconductor part 330 can be made of a material with excellent Seebeck effect. The material of the semiconductor part 330 can include (Bi, Sb) 2 Te 3 Base material, PbTe base material or CoSb 3 Base materials, etc.

[0079] like Figure 7 As shown, in some optional embodiments, the pixel defining portion 500 includes a plurality of first segments 520, the first segment 520 is located between two adjacent pixel openings 510, and the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 in at least one thermoelectric unit 300 are located on the side of the same first segment 520 facing away from the substrate 100.

[0080] In these optional embodiments, the first segment 520 is located between two adjacent pixel openings 510, that is, the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 in at least one thermoelectric unit 300 are arranged between two adjacent light-emitting units 200, so that the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 can fully absorb the heat of the two adjacent light-emitting units 200, thereby improving the thermoelectric conversion efficiency. In addition, the distance between the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 in the same thermoelectric unit 300 can be made closer, and the resistivity in the closed loop formed by the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 and the first conductive portion 310 and the second conductive portion 320 is low, thereby improving the thermoelectric conversion efficiency.

[0081] Optional, such as Figure 3 and Figure 4 As shown, the orthographic projection of the first conductive portion 310 on the substrate 100 at least partially overlaps with the orthographic projection of the pixel defining portion 500 on the substrate 100 , thereby reducing the influence of the first conductive portion 310 on the light emission of the light emitting unit 200 .

[0082] Optional, such as Figure 3 As shown, the orthographic projection of the second conductive portion 320 on the substrate 100 at least partially overlaps with the orthographic projection of the pixel defining portion 500 on the substrate 100 , thereby reducing the influence of the second conductive portion 320 on the light emission of the light emitting unit 200 .

[0083] Optionally, the semiconductor part 330 includes a light-transmitting material, so as to reduce the influence of the semiconductor part 330 on the light emission of the light-emitting unit 200. The material of the semiconductor part 330 may include zinc oxide, indium tin oxide, molybdenum bismuth oxide, and the like.

[0084] Optionally, the first conductive part 310 and / or the second conductive part 320 include a light-transmitting material, thereby reducing the influence of the first conductive part 310 on the light emission of the light-emitting unit 200. The material of the first conductive part 310 may include zinc oxide, indium tin oxide, indium zinc oxide, conductive polymer or metal nanowire.

[0085] The embodiment of the second aspect of the present application also provides a display device, including the display panel of any of the above-mentioned embodiments of the first aspect. Since the display device provided by the embodiment of the second aspect of the present application includes the display panel of any of the above-mentioned embodiments of the first aspect, the display device provided by the embodiment of the second aspect of the present application has the beneficial effects of the display panel of any of the above-mentioned embodiments of the first aspect, which will not be repeated here.

[0086] The display device in the embodiments of the present application includes but is not limited to mobile phones, personal digital assistants (PDAs), tablet computers, e-books, televisions, access control systems, smart landline phones, consoles, and other devices with display functions.

[0087] The third aspect of the present application also provides a method for manufacturing a display panel. Figure 8 As shown, including:

[0088] Step S01: Fig. 9 As shown, a light-emitting layer is formed on one side of the substrate 100 , and the light-emitting layer includes a plurality of light-emitting units 200 arranged at intervals.

[0089] Step S02: Fig.10 As shown, a first conductive portion 310 is formed on the side of the light emitting layer away from the substrate 100 .

[0090] Step S03: Fig.11 As shown, a semiconductor portion 330 is formed on the side of the first conductive portion 310 away from the substrate 100 , and the semiconductor portion 330 includes an electron-type semiconductor portion 331 and a hole-type semiconductor portion 332 that are adjacently arranged along a direction X perpendicular to the thickness of the display panel.

[0091] Step S04: Figure 2 As shown, the second conductive portion 320 is formed on the side of the semiconductor portion 330 facing away from the substrate 100 , and the first conductive portion 310 , the second conductive portion 320 , the electron-type semiconductor portion 331 and the hole-type semiconductor portion 332 form the thermoelectric unit 300 .

[0092] In this embodiment, the light-emitting unit 200 emits light to generate heat, the temperature of the thermoelectric unit 300 near the light-emitting unit 200 is higher, and the temperature gradually decreases in the direction away from the light-emitting unit 200. The holes and electrons in the semiconductor part 330 diffuse to the low-temperature end under the drive of the temperature field to form a potential difference, thereby generating a thermal current in a closed loop. The secondary use of the current generated in the thermoelectric unit 300 can reduce the power consumption of the display panel. In addition, the thermoelectric unit 300 absorbs part of the heat generated by the light-emitting unit 200, reducing the reduction in the service life of the light-emitting unit 200 caused by overheating of the light-emitting unit 200, and improving the performance of the display panel.

[0093] like Figure 2 As shown, in some optional embodiments, in step S03, it includes:

[0094] A second encapsulation layer 420 is formed on a side of the first conductive portion 310 facing away from the substrate 100 .

[0095] The second encapsulation layer 420 is patterned to form a first opening 421 extending along the thickness direction X of the display panel.

[0096] The semiconductor portion 330 is formed at the first opening 421 on the side of the first conductive portion 310 facing away from the substrate 100 .

[0097] In these optional embodiments, each semiconductor part 330 is formed in the first opening 421, so that the semiconductor part 330 and the second packaging layer 420 are arranged on the same layer, thereby reducing the thickness of the display panel. Each semiconductor part 330 is electrically connected to the first conductive part 310 through the first opening 421. The second packaging layer 420 can reduce the risk of contact short circuit between the semiconductor parts 330, thereby improving the reliability of the thermoelectric unit 300.

[0098] like Figure 2 As shown, in some other optional embodiments, in step S03 , it further includes: forming a second packaging layer 420 on the side of the first conductive portion 310 away from the substrate 100 , and the second packaging layer 420 surrounds at least a portion of the semiconductor portion 330 to form a first opening 421 .

[0099] In these optional embodiments, a semiconductor portion 330 is first formed on the first conductive portion 310, and then a second encapsulation layer 420 is formed on the first conductive portion 310. The second encapsulation layer 420 includes an organic material. When the organic material is in a liquid state, it flows between the semiconductor portions 330 to fill the spacing space between the semiconductor portions 330, thereby forming a first opening 421 surrounding the semiconductor portion 330.

[0100] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced with equivalents without departing from the scope of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A display panel, characterized in that: include: substrate; A light-emitting layer is disposed on one side of the substrate, and the light-emitting layer includes a plurality of light-emitting units disposed at intervals; A thermoelectric unit is arranged on a side of the light-emitting layer away from the substrate, and the thermoelectric unit includes a first conductive portion and a second conductive portion which are sequentially arranged along a side away from the substrate, and a semiconductor portion located between the first conductive portion and the second conductive portion; The semiconductor portion is electrically connected to the first conductive portion and the second conductive portion, and the semiconductor portion includes an electron-type semiconductor portion and a hole-type semiconductor portion which are adjacently arranged along a direction perpendicular to the thickness of the display panel.

2. The display panel according to claim 1, characterized in that: The display panel further includes a first encapsulation layer for encapsulating the light emitting unit, and the thermoelectric unit is arranged on a side of the first encapsulation layer away from the light emitting unit.

3. The display panel according to claim 2, characterized in that: The display panel further includes a second encapsulation layer, which is located on a side of the first conductive portion away from the first encapsulation layer. The second encapsulation layer is provided with a plurality of first openings extending along a thickness direction of the display panel, and each of the semiconductor portions is located in the first opening.

4. The display panel according to claim 3, characterized in that: The encapsulation layer further includes a third encapsulation layer, the third encapsulation layer is located on a side of the second encapsulation layer away from the substrate, the second conductive portion is located between the second encapsulation layer and the third encapsulation layer, Alternatively, the second conductive portion is located on a side of the third encapsulation layer away from the second encapsulation layer, the third encapsulation layer includes a second opening, the first opening is connected to the second opening, and the semiconductor portion is electrically connected to the second conductive portion through the second opening.

5. The display panel according to claim 1, characterized in that: A size of the semiconductor portion along a thickness direction of the display panel is greater than a size of the first conductive portion and / or the second conductive portion along the thickness direction of the display panel.

6. The display panel according to claim 1, characterized in that: The display panel includes a plurality of the thermoelectric units, the first conductive parts of the plurality of the thermoelectric units are arranged at intervals from each other, or the first conductive parts of the plurality of the thermoelectric units are arranged continuously over the entire surface; And / or, the second conductive parts of the plurality of thermoelectric units are arranged at intervals from each other, or the second conductive parts of the plurality of thermoelectric units are arranged continuously over the entire surface.

7. The display panel according to claim 1, characterized in that: An orthographic projection of the semiconductor portion on the substrate at least partially overlaps with an orthographic projection of the light emitting unit on the substrate.

8. The display panel according to claim 7, characterized in that: The display panel includes a plurality of the thermoelectric units, and the electron-type semiconductor portion and the hole-type semiconductor portion in at least one of the thermoelectric units are located on a side of the same light-emitting unit away from the substrate.

9. The display panel according to claim 1, characterized in that: The orthographic projection of the light emitting unit on the substrate is located within the orthographic projection of the electron-type semiconductor portion or the hole-type semiconductor portion on the substrate.

10. The display panel according to claim 1, characterized in that: The display panel also includes a pixel definition layer, which includes a pixel definition portion and a pixel opening formed by the pixel definition portion, at least part of the light-emitting unit is located in the pixel opening, and at least part of the semiconductor portion is located on a side of the pixel definition portion away from the substrate.

11. The display panel according to claim 10, characterized in that: The pixel defining portion includes a plurality of first segments, wherein the first segment is located between two adjacent pixel openings, and the electron-type semiconductor portion and the hole-type semiconductor portion in at least one of the thermoelectric units are located on a side of the same first segment away from the substrate.

12. The display panel according to claim 10, characterized in that: An orthographic projection of the first conductive portion and / or the second conductive portion on the substrate at least partially overlaps with an orthographic projection of the pixel defining portion on the substrate.

13. The display panel according to any one of claims 1 to 12, characterized in that: The semiconductor portion includes a light-transmitting material; And / or, the first conductive part includes a light-transmitting material; And / or, the second conductive part includes a light-transmitting material.

14. A display device, characterized in that: A display panel comprising any one of claims 1-13.

15. A method for manufacturing a display panel, characterized in that: include: Forming a light-emitting layer on one side of the substrate, wherein the light-emitting layer includes a plurality of light-emitting units arranged at intervals; forming a first conductive portion on a side of the light-emitting layer away from the substrate; forming a semiconductor portion on a side of the first conductive portion away from the substrate, the semiconductor portion comprising an electron-type semiconductor portion and a hole-type semiconductor portion adjacently arranged along a direction perpendicular to the thickness of the display panel; A second conductive portion is formed on a side of the semiconductor portion facing away from the substrate, and the first conductive portion, the second conductive portion, the electron-type semiconductor portion, and the hole-type semiconductor portion form a thermoelectric unit.

16. The manufacturing method according to claim 15, characterized in that: The step of forming a semiconductor portion on a side of the first conductive portion facing away from the substrate includes: forming a second packaging layer on a side of the first conductive portion away from the substrate; Patterning the second encapsulation layer to form a first opening extending along a thickness direction of the display panel; The semiconductor portion located in the first opening is formed on a side of the first conductive portion away from the substrate.

17. The manufacturing method according to claim 15, characterized in that: The step of forming a semiconductor portion on a side of the first conductive portion away from the substrate further includes: A second packaging layer is formed on a side of the first conductive portion facing away from the substrate, and the second packaging layer surrounds at least a portion of the semiconductor portion to form a first opening.

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