Photo-thermal effect enhanced semiconductor chip temperature alarm and monitoring system

Abstract

The invention discloses a photothermal effect enhanced semiconductor chip temperature alarm and a monitoring system, which are applied to the technical field of temperature monitoring, and the temperature alarm comprises an LED chip used for emitting ultraviolet light. And the halogen inorganic salt-thermal radiation quantum dot film is used for receiving the ultraviolet light emitted by the LED chip and is excited. And the clamping device can be conveniently clamped on an object to be detected. Meanwhile, the invention also discloses a temperature monitoring system, which carries out temperature visual monitoring by arranging an optical filter, a silicon detector, a memory and the like and utilizing an information transmission module, an information processing module, a storage unit module and the like. The temperature alarm adopts the halogen inorganic salt-thermal radiation quantum dot film, solves the technical problems of inaccurate measurement result, slow response speed and complex installation caused by external electromagnetic wave interference in the prior art, realizes the technical effects of high-precision temperature measurement, fast response speed and convenient installation and use, and is matched with a monitoring system for use. And the temperature controllability is further effectively improved.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite quantum dot applications, and in particular to a photothermal effect enhanced semiconductor chip temperature alarm and a monitoring system. Background Art

[0002] A temperature alarm is an instrument that uses a temperature sensor to detect the external temperature in real time. When the temperature exceeds or falls below the critical value set by the user, it will sound an alarm. This alarm can be connected to a variety of alarm devices, such as sound devices, prompt lights, or send alarm information or real-time temperature information to the user through the network. The three major foundations of modern information technology are information acquisition (i.e. sensor technology), information transmission (communication technology) and information processing (computer technology).

[0003] Temperature sensors are mainly divided into distributed fiber temperature sensors, grating temperature sensors, fluorescence temperature sensors, interferometric temperature sensors, etc. Among them, nano-fluorescence temperature sensors use the temperature-dependent characteristics of nano-materials to measure temperature changes. At present, new temperature sensors in the world are developing from analog to digital, from integration to intelligence and networking. For example, intelligent temperature sensors and analog integrated temperature sensors / controllers are widely used in the production of temperature alarms.

[0004] However, the inventors of this application found that the above technology has at least the following technical problems in the process of implementing the technical solution of the invention in the embodiment of this application:

[0005] 1. Currently, the temperature alarm is still greatly affected by the environment. Under conditions such as electromagnetic interference, abrasion and mechanical vibration, the measurement results will be unstable, thus affecting the accuracy of temperature control.

[0006] 2. Currently, the response speed of temperature alarms is still not fast enough. General temperature alarms require multiple links of processing before they can alarm, and their response speed is not as fast as other alarms.

[0007] 3. Currently, the installation and wiring of temperature alarms are relatively complicated, which increases the difficulty of use and maintenance. Summary of the invention

[0008] The embodiments of the present application provide a photothermal effect enhanced semiconductor chip temperature alarm and monitoring system, which solves the technical problems in the prior art caused by external electromagnetic wave interference, such as inaccurate measurement results, slow response speed and complex installation, and achieves the technical effects of high-precision temperature measurement, fast response speed and easy installation and use.

[0009] In order to solve the above technical problems, the present invention provides a photothermal effect enhanced semiconductor chip temperature alarm and monitoring system, which includes:

[0010] LED chip 1, emitting ultraviolet light;

[0011] The halogen inorganic salt-thermal radiation quantum dot film 2 receives the ultraviolet light emitted by the LED chip and is excited;

[0012] The clamping device 3 is used to clamp the temperature alarm on the object to be tested.

[0013] Furthermore, the LED chip 1 is a 310nm LED chip that emits ultraviolet light.

[0014] Furthermore, the temperature adjustment range of the photothermal effect enhanced semiconductor chip temperature alarm is 90 to 120°C.

[0015] Furthermore, the preparation method of the halogen inorganic salt-thermal radiation quantum dot film 2 comprises the following steps:

[0016] S1: Weigh the ZnS composite glass matrix and the halogen inorganic salt according to a certain molar mass ratio, pour them into a purple agate mortar and grind them evenly.

[0017] S2: The fully ground mixture is transferred into a corundum crucible, and the corundum crucible is placed in a muffle furnace for heat preservation.

[0018] S3: The mixture after heat preservation is quickly taken out and poured into a mold for forming and heat preservation, and then naturally cooled to room temperature to obtain halogen inorganic salt doped ZnS composite glass ceramics.

[0019] S4: Grinding the obtained halogen inorganic salt-doped ZnS composite glass-ceramic into powder.

[0020] S5: Add curing resin to the above powder, mix well and centrifuge in a high speed centrifuge to obtain slurry.

[0021] S6: introducing the slurry into a mold and curing it at room temperature or high temperature to obtain a halogen inorganic salt-thermal radiation quantum dot film.

[0022] Furthermore, in step S1, the composition of the ZnS composite glass matrix is ​​Na2O-B2O3-SiO2-ZnO-mZnS (m=1-10mol%), the halogen ion inorganic salt is in the form of AB (A: one or more of Li, Na, K; B: one or more of Cl, Br, I, F), and the doping amount of the halogen ion inorganic salt is determined according to the proportion of ZnS, specifically 1-30mol%.

[0023] Furthermore, the curing resin in step S5 is a thermoplastic resin, including but not limited to polydimethylsiloxane (PDMS), acrylic resin (PMMA), ABS resin, and polyvinyl chloride resin (PVC).

[0024] Furthermore, in step S5, the mass ratio of the halogen ion-doped ZnS composite glass ceramic powder to the curing resin is 1:0.1-5.

[0025] Furthermore, in step S2, the temperature of the high-temperature sintering in the muffle furnace is 900°C-1350°C, and the sintering time is 5-60 minutes; in step S3, the preheating temperature of the mold is 200-300°C, and the insulation time in the mold is 0.5-3 hours; in step S5, the mass ratio of the halogen ion-doped ZnS composite glass ceramic powder to the curing resin is 1:0.1-5; in step S5, the centrifugation time is 1-10 minutes.; in step S6, the curing temperature is determined according to the selected curing resin, and the temperature range is 10-150°C; the curing time is determined according to the curing temperature, and the curing time is 3-720 minutes.

[0026] Furthermore, the photothermal effect enhanced semiconductor chip temperature alarm further comprises:

[0027] The filter 4 is arranged on the right side of the halogen inorganic salt-thermal radiation quantum dot film 2, and is used to filter the fluorescence emitted by the quantum dot film and the transmitted ultraviolet light;

[0028] A silicon detector 5, arranged on the inner wall of the right end surface of the temperature alarm, is used to receive the filtered light and convert the spectrum information into an electrical signal;

[0029] A display screen 6, which runs through the right end surface of the temperature alarm and is located below the silicon detector 5, and is used to display temperature information;

[0030] A first processor 7, disposed on a port on the inner wall of the clamping rod of the clamping device 3, for converting the electrical signal into temperature information;

[0031] A second processor 8 is disposed at the lower part of the first processor 7 and is used to process the temperature information and transmit it to the external display 6;

[0032] The storage device 9 is disposed at the lower part of the second processor 8 and is used for collecting and storing the temperature information.

[0033] Furthermore, the optical filter 4 is a high-pass filter with a cut-off wavelength of 410 nm.

[0034] In addition, the present invention also provides a temperature monitoring system suitable for the photothermal effect enhanced semiconductor chip temperature alarm, which includes:

[0035] The information collection module 402 is used to receive the information of the silicon detector 5 and generate first identification information, and send it to the information processing module, wherein the first identification information is the electrical signal converted by the silicon detector 5 from the spectral information;

[0036] An information processing module 403 is used to process the first identification information into first display information and first storage information, wherein the first display information and the first storage information are both temperature information;

[0037] An information transmission module 404, configured to receive the first display information and the first storage information, transmit the first display information to a display module, and transmit the first storage information to a storage module;

[0038] Display module 405, receiving the first display information and displaying it to the outside;

[0039] Storage module 406 receives the first storage information and stores it in the storage

[0040] (9) Medium;

[0041] The power module 401 is used to supply power to the information collection module 402 and the information processing module

[0042] 403 , information transmission module 404 , display module 405 , and storage module 406 provide power.

[0043] In addition, the present invention also provides an information processing method, applicable to the temperature monitoring system according to claim 9, comprising:

[0044] S1 'receives data from the silicon detector and generates a first identification information;

[0045] S2 'processes the first identification information and generates the first display information, the first storage information;

[0046] S3 'receive the first storage information and store it;

[0047] S4'. Receive and display the first display information.

[0048] One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:

[0049] 1. Due to the use of halogen inorganic salt-thermal radiation quantum dot film, it can emit light of a certain color under certain ultraviolet light excitation, and this quantum dot film can change from the first color to the second color within the range of 90 to 120°C, has a good thermal environment response, and is a visual change. Therefore, it effectively solves the technical problem of slow response speed of temperature alarm in the prior art, and thus achieves the technical effect of rapid response of temperature alarm.

[0050] 2. Due to the use of halogen inorganic salt-thermal radiation quantum dot film, it has a certain ability to resist electromagnetic interference and has strong resistance to water and oxygen. It can still emit bright colors in water. Therefore, it effectively solves the technical problem of being affected by the environment and causing unstable measurement results under conditions such as electromagnetic interference and water environment, thereby achieving the accuracy of the temperature alarm.

[0051] 3. Due to the use of a simple clamping device and a micro-structure device, it can be independently clamped at the place where measurement is required, thus effectively solving the technical problems of complex installation and use of temperature alarms in the prior art, thereby achieving the technical effect of portability and easy use of the temperature alarm. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 This is a front view of the device in Example 1 of the present application.

[0053] Figure 2 This is a front cross-sectional view of the device in Example 1 of the present application.

[0054] Figure 3 It is a side cross-sectional view of the device in Example 1 of the present application.

[0055] Figure 4 This is a fluorescence emission diagram of the thermal radiation film in Example 1 of the present application.

[0056] Figure 5 This is the excitation light spectrum of the thermal radiation film in Example 1 of the present application.

[0057] Figure 6 This is a diagram showing the appearance of the thermal radiation film in the first embodiment of the present application in water.

[0058] Figure 7 This is a diagram of the appearance of the thermal radiation film in Example 1 of the present application when it is excited in water.

[0059] Figure 8 This is a color coordinate spectrum diagram of the thermal radiation film in Example 1 of the present application.

[0060] Fig. 9 This is a structural diagram of the device in Example 4 of the present application.

[0061] Fig.10 This is a detailed diagram of the clamping device in Example 4 of the present application.

[0062] Fig.11 This is a flow chart of the monitoring system in Example 4 of the present application.

[0063] Fig.12 This is a diagram of an information processing method suitable for a monitoring system in Embodiment 4 of the present application. DETAILED DESCRIPTION

[0064] The embodiment of the present application provides a photothermal effect enhanced semiconductor chip temperature alarm and monitoring system, and uses a halogen inorganic salt-thermal radiation quantum dot film to solve the technical problems in the prior art that the temperature alarm is greatly affected by the environment, has a slow response speed, and is complicated to install and use.

[0065] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0066] Embodiment 1

[0067] A photothermal effect enhanced semiconductor chip temperature alarm, comprising:

[0068] The LED chip 1 is used for emitting ultraviolet light, and specifically a 310nm LED chip is used.

[0069] The halogen inorganic salt-thermal radiation quantum dot film 2 is used to receive the ultraviolet light emitted by the LED chip and be excited.

[0070] The clamping device 3 is used to clamp the temperature alarm on the object to be tested.

[0071] The upper end of the temperature alarm is made of heat-resistant glass or other transparent and heat-resistant materials.

[0072] The ultraviolet light emitted by LED chip 1 is focused onto the NaBr-thermal radiation film. After excitation, the NaBr-thermal radiation film emits corresponding fluorescent color. As the temperature changes, the color of the fluorescence also changes. At this time, at 90-120℃, the color changes from cyan to green. The color change is visible to the naked eye, and a temperature alarm signal is conveyed at this time.

[0073] The steps for preparing the NaBr-thermal radiation film in the photothermal effect enhanced semiconductor chip temperature alarm are as follows:

[0074] Analytically pure Na2CO3, ZnO, B2O3, SiO2, ZnS, and NaBr are accurately weighed according to the matrix glass raw materials of 10mol% Na2O, 15mol% ZnO, 55mol% B2O3, 20mol% SiO2; 10wt% ZnS, 20wt% NaBr, and then placed in an agate mortar, ground evenly in the agate mortar, placed in a corundum crucible, and placed in a muffle furnace at 1000℃ for 10 minutes. Then, the glass melt is taken out and quickly cast in a mold preheated at 200℃ for forming, kept warm for 1h, and then naturally cooled to obtain NaBr-doped ZnS composite glass ceramics. The prepared NaBr-doped ZnS composite glass ceramics are ground into powder and 10g is taken out and mixed with 8g PDMS thoroughly and centrifuged to obtain slurry. The slurry is poured into a cylindrical mold and cured at 100℃ for 30 minutes to obtain a NaBr-thermal radiation film.

[0075] The technical solutions in the above embodiments of the present application have at least the following technical effects or advantages:

[0076] 1. Due to the use of halogen inorganic salt-thermal radiation quantum dot film, it can emit light of a certain color under certain ultraviolet light excitation, and this quantum dot film can change its color from cyan to green in the range of 90-120℃, has good thermal environment response, and is a visual change (such as the attached Figure 4 , 5 , 8) Therefore, the technical problem of slow response speed of the temperature alarm in the prior art is effectively solved, thereby achieving the technical effect of rapid response of the temperature alarm.

[0077] 2. Due to the use of halogen inorganic salt-thermal radiation quantum dot film, it has a certain ability to resist electromagnetic interference and has strong resistance to water and oxygen. It can still emit bright colors in water (such as attached Figure 6 , Attachment Figure 7 As shown), it effectively solves the technical problem that the measurement results will be unstable under conditions such as electromagnetic interference and water environment due to environmental influences, thereby achieving the accuracy of the temperature alarm.

[0078] 3. Due to the use of simple clamping devices and micro-structure devices, it can be independently clamped where it needs to be measured (such as attached Figure 1 , 2 , 3), therefore, the technical problem of complex installation and use of the temperature alarm in the prior art is effectively solved, thereby achieving the technical effect of making the temperature alarm portable and easy to use.

[0079] Embodiment 2

[0080] A photothermal effect enhanced semiconductor chip temperature alarm, comprising:

[0081] The LED chip 1 is used for emitting ultraviolet light, and specifically a 310nm LED chip is used.

[0082] The halogen inorganic salt-thermal radiation quantum dot film 2 is used to receive the ultraviolet light emitted by the LED chip and be excited.

[0083] The clamping device 3 is used to clamp the temperature alarm on the object to be tested.

[0084] The upper end of the temperature alarm is made of heat-resistant glass or other transparent and heat-resistant materials.

[0085] The ultraviolet light emitted by the LED chip 1 is focused onto the KCl-thermal radiation film. After being excited, the KCl-thermal radiation film emits a corresponding fluorescent color. As the temperature changes, the color of the fluorescence also changes. At this time, the color changes visible to the naked eye at 90-120°C, and a temperature alarm signal is conveyed at this time.

[0086] Since the photothermal effect enhanced semiconductor chip temperature alarm is provided with a clamping device 3, it is convenient to clamp it onto the object to be tested. The clamping device is not limited to Figure 1 Style shown.

[0087] The steps for preparing the KCl-thermal radiation film in the photothermal effect enhanced semiconductor chip temperature alarm are as follows:

[0088] Analytically pure Na2CO3, ZnO, B2O3, SiO2, ZnS, KCl, according to the matrix glass raw materials 10mol% Na2O, 15mol% ZnO, 55mol% B2O3, 20mol% SiO2; 10wt% ZnS, 100wt% KCl are accurately weighed and placed in an agate mortar, ground evenly in the agate mortar, placed in a corundum crucible, and placed in a muffle furnace at 1050℃ for 10 minutes, and then the glass melt is taken out and quickly cast in a mold preheated at 250℃ for 1.5 hours, and then naturally cooled to obtain KCl-doped ZnS composite glass ceramics. The prepared KCl-doped ZnS composite glass ceramics are ground into powder and 5g is taken out and mixed with 10g PMMA and centrifuged to obtain slurry, and the slurry is poured into a cylindrical mold and cured at room temperature for 360 minutes to obtain a KCl-thermal radiation film.

[0089] Embodiment 3

[0090] A photothermal effect enhanced semiconductor chip temperature alarm, comprising:

[0091] The LED chip 1 is used for emitting ultraviolet light, and specifically a 310nm LED chip is used.

[0092] The halogen inorganic salt-thermal radiation quantum dot film 2 is used to receive the ultraviolet light emitted by the LED chip and be excited.

[0093] The clamping device 3 is used to clamp the temperature alarm on the object to be tested.

[0094] The ultraviolet light emitted by the LED chip 1 is focused onto the LiI-thermal radiation film. After being excited, the LiI-thermal radiation film emits a corresponding fluorescent color. As the temperature changes, the color of the fluorescence also changes. At this time, the color changes visible to the naked eye at 90-120°C, and a temperature alarm signal is conveyed at this time.

[0095] The upper end of the temperature alarm is made of heat-resistant glass or other transparent and heat-resistant materials.

[0096] The steps for preparing the LiI-thermal radiation film in the photothermal effect enhanced semiconductor chip temperature alarm are as follows:

[0097] Analytically pure Na2CO3, ZnO, B2O3, SiO2, ZnS, LiI, according to the matrix glass raw materials 10mol% Na2O, 15mol% ZnO, 55mol% B2O3, 20mol% SiO2; 10wt% ZnS, 30wt% LiI were accurately weighed and placed in an agate mortar, ground evenly in the agate mortar, placed in a corundum crucible, and placed in a muffle furnace at 1100℃ for 10 minutes, and then the glass melt was taken out and quickly cast in a mold preheated at 300℃ for forming, kept warm for 2 hours, and then naturally cooled to obtain LiI-doped ZnS composite glass ceramics. The prepared LiI-doped ZnS composite glass ceramics were ground into powder and 5g was taken out and mixed with 5g PVC and centrifuged to obtain slurry, and the slurry was poured into a cylindrical mold and cured at 150℃ for 6 minutes to obtain LiI-thermal radiation film.

[0098] Embodiment 4

[0099] As attached Fig. 9 , 10 As shown, a photothermal effect enhanced semiconductor chip temperature alarm comprises:

[0100] The LED chip 1 is used for emitting ultraviolet light, and specifically a 310nm LED chip is used.

[0101] The halogen inorganic salt-thermal radiation quantum dot film 2 is used to receive the ultraviolet light emitted by the LED chip and be excited.

[0102] The clamping device 3 is used to clamp the temperature alarm on the object to be tested.

[0103] The filter 4 is arranged on the right side of the halogen inorganic salt-thermal radiation quantum dot film 2, and is used to filter the fluorescence emitted by the quantum dot film and the transmitted ultraviolet light;

[0104] A silicon detector 5, arranged on the inner wall of the right end surface of the temperature alarm, is used to receive the filtered light and convert the spectrum information into an electrical signal;

[0105] A display screen 6, which runs through the right end surface of the temperature alarm and is located below the silicon detector 5, and is used to display temperature information;

[0106] A first processor 7, disposed on a port on the inner wall of the clamping rod of the clamping device 3, for converting the electrical signal into temperature information;

[0107] The second processor 8 is disposed at the lower part of the first processor 7 and is used to process the temperature information and transmit it to the external display screen 6;

[0108] The storage device 9 is disposed at the lower part of the second processor 8 and is used for collecting and storing the temperature information.

[0109] The ultraviolet light emitted by the LED chip 1 is focused onto the halogen inorganic salt-thermal radiation quantum dot film 2. At this time, the quantum dot film appears fluorescent. As the temperature rises, within 90-120°C, the color visible to the naked eye changes from the first color to the second color. Then, the quantum dot fluorescence emitted from the quantum dot film and the transmitted ultraviolet light are received by the silicon detector 5 through the filter, and the spectral information is converted into an electrical signal. The electrical signal is then transmitted to the first processor 7, which converts the electrical signal into temperature information and transmits it to the second processor 8 and storage 9. The second processor outputs the temperature information to the external display screen 6, and the storage 9 stores the temperature information. The flow chart of the device system is shown in the attached figure. Fig.11 shown.

[0110] A temperature monitoring system suitable for the temperature alarm, comprising:

[0111] The information collection module 402 is used to receive information from the silicon detector and generate first identification information, and send it to the information processing module, where the first identification information is the electrical signal converted by the silicon detector from the spectral information;

[0112] An information processing module 403 is used to process the first identification information into first display information and first storage information, wherein the first display information and the first storage information are both temperature information;

[0113] An information transmission module 404, configured to receive the first display information and the first storage information, transmit the first display information to a display module, and transmit the first storage information to a storage module;

[0114] Display module 405, receiving the first display information and displaying it to the outside;

[0115] A storage module 406 receives the first storage information and stores it in the memory;

[0116] The power module 401 is used to supply power to the information collection module 402 , the information processing module 403 , the information transmission module 404 , the display module 405 , and the storage module 406 .

[0117] Attached Fig.12 The figure shows an information processing method suitable for temperature monitoring system:

[0118] S1 'receives data from the silicon detector and generates a first identification information;

[0119] S2 'processes the first identification information and generates the first display information, the first storage information;

[0120] S3 'receive the first storage information and store it;

[0121] S4'. Receive and display the first display information.

[0122] The technical solutions in the above embodiments of the present application have at least the following technical effects or advantages:

[0123] 1. The use of halogen inorganic salt-thermal radiation quantum dot film solves the technical problems of temperature alarms in the prior art that are greatly affected by the environment, have slow response speeds, and are complex to install and use.

[0124] 2. Due to the use of sensing devices, the peak wave of the quantum dot photoluminescence spectrum can be used

[0125] The system can perform spectral analysis based on multiple optical parameters such as wavelength, peak intensity and half-maximum full width, and convert the spectral information into electrical signals and temperature information. The temperature information can be output remotely to achieve the effect of remote alarm.

[0126] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0127] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0128] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0129] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0130] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A photothermal effect enhanced semiconductor chip temperature alarm, wherein: include: An LED chip (1) emitting ultraviolet light; The halogen inorganic salt-thermal radiation quantum dot film (2) receives the ultraviolet light emitted by the LED chip and is excited; The clamping device (3) is used to clamp the temperature alarm on the object to be tested.

2. The photothermal effect enhanced semiconductor chip temperature alarm according to claim 1, wherein: The LED chip (1) is a 310nm LED chip that emits ultraviolet light.

3. The photothermal effect enhanced semiconductor chip temperature alarm according to claim 1, wherein: The temperature adjustment range of the photothermal effect enhanced semiconductor chip temperature alarm is 90-120°C.

4. The photothermal effect enhanced semiconductor chip temperature alarm according to claim 1, wherein: The preparation method of the halogen inorganic salt-thermal radiation quantum dot film (2) comprises the following steps: S1: Weigh the ZnS composite glass matrix and the halogen inorganic salt according to a certain molar mass ratio, pour them into a purple agate mortar and grind them evenly. S2: The fully ground mixture is transferred into a corundum crucible, and the corundum crucible is placed in a muffle furnace for heat preservation. S3: The mixture after heat preservation is quickly taken out and poured into a mold for forming and heat preservation, and then naturally cooled to room temperature to obtain halogen inorganic salt doped ZnS composite glass ceramics. S4: Grinding the obtained halogen inorganic salt-doped ZnS composite glass-ceramic into powder. S5: Add curing resin to the above powder, mix well and centrifuge in a high speed centrifuge to obtain slurry. S6: introducing the slurry into a mold and curing it at room temperature or high temperature to obtain a halogen inorganic salt-thermal radiation quantum dot film.

5. The method for preparing a halogen inorganic salt-thermal radiation quantum dot thin film according to claim 4, wherein: In the step S1, the composition of the ZnS composite glass matrix is ​​Na2O-B2O3-SiO2-ZnO-mZnS (m=1-10mol%), the halogen ion inorganic salt is in the form of AB (A: one or more of Li, Na, K; B: one or more of Cl, Br, I, F), and the doping amount of the halogen ion inorganic salt is determined according to the proportion of ZnS, specifically 1-30mol%. The curing resin in step S5 is a thermoplastic resin, including but not limited to polydimethylsiloxane (PDMS), acrylic resin (PMMA), ABS resin, and polyvinyl chloride resin (PVC). In the step S5, the mass ratio of the halogen ion-doped ZnS composite glass ceramic powder to the curing resin is 1:0.1-5.

6. The method for preparing the halogen inorganic salt-thermal radiation quantum dot film according to claim 4, wherein: The temperature of the high-temperature sintering in the muffle furnace in step S2 is 900° C.-1350° C., and the sintering time is 5-60 minutes. In step S3, the preheating temperature of the mold is 200-300° C., and the insulation time in the mold is 0.5-3 hours. In the step S5, the mass ratio of the halogen ion-doped ZnS composite glass ceramic powder to the curing resin is 1:0.1-5. The centrifugation time in step S5 is 1-10 min. In step S6, the curing temperature is determined according to the selected curing resin, and the temperature range is 10-150° C.; the curing time is determined according to the curing temperature, and the curing time is 3-720 minutes.

7. The photothermal effect enhanced semiconductor chip temperature alarm according to claims 1-4, wherein: Also includes: A filter (4) is arranged on the right side of the halogen inorganic salt-thermal radiation quantum dot film (2) and is used to filter the fluorescence emitted by the quantum dot film and the transmitted ultraviolet light; A silicon detector (5), arranged on the inner wall of the right end surface of the temperature alarm, for receiving the filtered light and converting the spectrum information into an electrical signal; A display screen (6), which runs through the right end surface of the temperature alarm and is located below the silicon detector (5), and is used to display temperature information; A first processor (7), arranged on a port on the inner wall of the clamping rod of the clamping device (3), and used for converting the electrical signal into temperature information; A second processor (8), disposed at the bottom of the first processor (7), is used to process the temperature information and transmit it to an external display screen (6); The storage device (9) is arranged at the bottom of the second processor (8) and is used for collecting and storing the temperature information.

8. The photothermal effect enhanced semiconductor chip temperature alarm according to claim 7, wherein: The optical filter (4) is a high-pass filter with a cut-off wavelength of 410 nm.

9. A temperature monitoring system suitable for the photothermal effect enhanced semiconductor chip temperature alarm according to claims 7-8, wherein: include: An information collection module (402) is used to receive information from the silicon detector (5) and generate first identification information, and send the first identification information to the information processing module, wherein the first identification information is an electrical signal converted by the silicon detector (5) from the spectral information; An information processing module (403) is used to process the first identification information into first display information and first storage information, wherein the first display information and the first storage information are both temperature information; An information transmission module (404), configured to receive the first display information and the first storage information, transmit the first display information to a display module, and transmit the first storage information to a storage module; A display module (405) receives the first display information and displays it to the outside world; a storage module (406) receives the first storage information and stores it in the storage device (9); The power supply module (401) is used to supply power to the information collection module (402), the information processing module (403), the information transmission module (404), the display module (405), and the storage module (406).

10. An information processing method, applicable to the temperature monitoring system according to claim 9, comprising: S1 'receives data from the silicon detector and generates a first identification information; S2 'processes the first identification information and generates the first display information, the first storage information; S3 'receive the first storage information and store it; S4'. Receive and display the first display information.

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