Wafer edge defect detection device and method

Abstract

The invention relates to a wafer edge defect detection device and method, and the device comprises a side edge detection module which is configured to collect the image data of the side edge of a to-be-detected wafer based on the scattering of the side edge of the to-be-detected wafer, the side edge detection module comprises a U-shaped light source, and the U-shaped light source is used for irradiating the side edge of the wafer at different angles; the chamfer detection module is configured to collect image data of the to-be-detected wafer chamfer based on scattering of the to-be-detected wafer chamfer; and the transmission detection module is configured to acquire image data of internal defects of the edge of the wafer to be detected through transmission of the short-wave infrared light source. According to the wafer edge defect detection device provided by the invention, the defects at the same position are comprehensively judged through three detection modes, so that the possibility of misjudgment is reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment technology, and in particular to a wafer edge defect detection device and method. Background Art

[0003] During the manufacturing process, defects are prone to occur at the edge of the wafer. These defects will spread to the internal area and surface of the wafer, affecting the devices inside the wafer. As the feature size continues to shrink, the devices are getting closer to the edge of the wafer. The impact of wafer edge defects on the process and product yield is increasing. Wafers with edge defects flowing into subsequent processes will have a serious impact on product performance and yield. As an important inspection method, Automated Optical Inspection (AOI) technology is widely used in wafer inspection.

[0004] The edge of the wafer has a variety of chamfer shapes. The imaging of different chamfer shapes will produce obvious differences, affecting the detection effect. As for the location of the wafer defect distribution, some are distributed on the wafer surface, and some are distributed inside the wafer. In order to meet these detection requirements at the same time, the optical detection module needs to have sufficient compatibility to meet the detection of defects in different shapes and locations. The optical module needs to ensure a consistent imaging background for different objects, and at the same time make the difference between defect imaging and background imaging large enough to meet the detection requirements of subsequent algorithms. Summary of the invention

[0006] In view of some or all of the problems in the prior art, the present invention provides a wafer edge defect detection device, comprising: A side detection module, which is configured to collect image data of the side of the wafer to be tested based on scattering of the side of the wafer to be tested, the side detection module comprising a U-shaped light source, the U-shaped light source being used to illuminate the side of the wafer at different angles; A chamfer detection module configured to collect image data of the chamfer of the wafer to be tested based on scattering of the chamfer of the wafer to be tested; and The transmission detection module is configured to collect image data of internal defects at the edge of the wafer to be tested through the transmission of a short-wave infrared light source.

[0007] Furthermore, the wafer edge defect detection device further comprises: A carrying platform, on which the side detection module, the chamfer detection module and the transmission detection module are arranged; and / or A positioning device, which is arranged on the carrier and is used for fixing, rotating and positioning the wafer to be tested; and / or The data processing module is configured to receive the image data collected by the side detection module, the chamfer detection module and the transmission detection module, and process and generate a detection report containing wafer edge defects.

[0008] Furthermore, the side detection module also includes A reflector, wherein the reflector is a right-angle reflector and is used to reflect scattered light from the side of the wafer to be tested; A first telecentric lens, the first telecentric lens is used to receive scattered light reflected by the reflector; and A first line scan camera is arranged on the first telecentric lens, and the first line scan camera responds to a light band of 400nm-1100nm.

[0009] Furthermore, the U-shaped light source comprises: A first lighting source, wherein the first lighting source comprises four groups of light bars; A first lens, the first lens is arranged before the four groups of light bars, and the first lens is used to reduce the divergence angle of the illumination light beam; a light homogenizer, the light homogenizer being arranged before the first lens; and A housing, the housing comprising a U-shaped portion and a vertical portion; Light holes are arranged at the centers of the housing and the light homogenizer.

[0010] Further, each group of light bars includes two light bars; and / or Each light bar includes a plurality of light beads; and / or The lamp beads are blue light LED lamp beads.

[0011] Furthermore, the chamfer detection module includes: A second illumination light source, wherein the angle between the light beam emitted by the second illumination light source and the surface of the wafer to be measured is 50°; A second telecentric lens, the second telecentric lens is used to receive scattered light of the light beam emitted by the second illumination light source on the surface of the wafer to be measured; and A second line scan camera is arranged on the second telecentric lens, and the second line scan camera responds to a light band of 400nm-1100nm.

[0012] Furthermore, the second illumination light source is a blue LED light source; and / or The second illumination light source includes a second lens.

[0013] Furthermore, the transmission detection module includes: A short-wave infrared light source, which is arranged under the wafer to be tested and emits light in the wavelength range of 400nm-1700nm; A short-wave infrared lens, the short-wave infrared lens is used to receive the light beam after the short-wave infrared light source transmits through the wafer to be tested; and A short-wave line scan camera is arranged on the short-wave infrared lens, and the short-wave line scan camera responds to a light band of 400nm-1700nm.

[0014] The present invention also provides a wafer edge defect detection method, the method comprising the following steps: Use a positioning device to fix and position the wafer to be tested; Move the side inspection module, the chamfer inspection module and the transmission inspection module to the inspection position; The positioning device is used to rotate the wafer to be tested, and the side detection module, the chamfer detection module and the transmission detection module are sequentially completed; Analyze the inspection results of the side inspection module, chamfer inspection module and transmission inspection module, determine the defect location and defect type, and generate an inspection report.

[0015] Furthermore, the detection results of the side detection module, the chamfer detection module and the transmission detection module are analyzed to determine the defect location and defect type including: Determine the defect morphology according to the defects detected by the side detection module, the chamfer detection module and the transmission detection module respectively; The size of the defect is determined based on the consistency of the defect positions detected by different detection modules; when the defect positions are consistent, it is determined whether the defect is a surface defect or an internal defect, and the extension of the defect is determined.

[0016] The technical solution provided by the present invention has the following advantages: 1. The wafer edge defect detection device provided by the present invention adopts a bright field illumination method for the wafer side (apex), which solves the problem of stray light easily generated by the dark field method, provides a stable and uniform imaging background, and greatly improves the accuracy of side detection.

[0017] 2. The wafer edge defect detection device provided by the present invention adopts a dark field illumination method for the chamfered portion (shoulder) of the wafer, which can effectively improve the contrast of the defect image in this area, and is conducive to the stable and accurate detection of defects in this area.

[0018] 3. The wafer edge defect detection device provided by the present invention uses a short-wave infrared (SWIR) light source to detect defects inside the edge through transmission imaging, which can effectively solve the problem that visible light cannot detect internal defects.

[0019] 4. The wafer edge defect detection device provided by the present invention makes a comprehensive judgment on defects at the same position through three detection methods, thereby reducing the possibility of misjudgment. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] To further illustrate the above and other advantages and features of various embodiments of the present invention, a more specific description of various embodiments of the present invention will be presented with reference to the accompanying drawings. It will be understood that these drawings only depict typical embodiments of the present invention and are therefore not to be considered as limiting the scope thereof. In the accompanying drawings, for clarity, identical or corresponding parts will be represented by identical or similar reference numerals.

[0022] Figure 1 A three-dimensional schematic diagram of a wafer edge defect detection device according to an embodiment of the present invention is shown; Figure 2 A schematic diagram of a wafer edge detection area according to an embodiment of the present invention is shown; Figure 3 A schematic diagram showing the structure of a side detection module according to an embodiment of the present invention is shown; Figure 4 A schematic diagram showing the structure of a U-shaped light source according to an embodiment of the present invention is shown; Figure 5 A schematic diagram of a light hole of a U-shaped light source according to an embodiment of the present invention is shown; Figure 6 A three-dimensional schematic diagram of a chamfer detection module according to an embodiment of the present invention is shown; Figure 7 A schematic diagram of an optical path of a chamfer detection module according to an embodiment of the present invention is shown; Figure 8 A schematic diagram showing the structure of a transmission detection module according to an embodiment of the present invention Fig. 9 A schematic diagram showing a process flow of a wafer edge defect detection method according to an embodiment of the present invention; and Fig.10 A defect determination logic schematic diagram of a wafer edge defect detection method according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0024] In the following description, the present invention is described with reference to various embodiments. However, those skilled in the art will recognize that various embodiments may be implemented without one or more specific details or with other replacement and / or additional methods or components. In other cases, well-known structures or operations are not shown or described in detail to avoid obscuring the inventive point of the present invention. Similarly, for the purpose of explanation, specific numbers and configurations are set forth to provide a comprehensive understanding of embodiments of the present invention. However, the present invention is not limited to these specific details.

[0025] In the present invention, unless otherwise specified, "arranged on..." or "arranged above..." does not exclude the presence of an intermediate object between the two. In addition, "arranged on or above..." merely indicates the relative positional relationship between two components, and in certain circumstances, such as after reversing the product direction, it can also be converted to "arranged below or below...", and vice versa.

[0026] In this specification, reference to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present invention. The phrase "in one embodiment" appearing in various places in this specification does not necessarily all refer to the same embodiment.

[0027] It should be noted that it should also be understood that in the embodiments of the present invention, the terms "comprises", "including", "having", "includes" and / or "comprising", when used in this specification, indicate the existence of stated features, elements and / or parts, but do not exclude the existence or addition of one or more other features, elements, parts and / or combinations thereof.

[0028] In this specification, unless otherwise specified, "first" and "second" are only used for distinguishing descriptions, do not include differences in size, and cannot be understood as expressing or implying relative importance.

[0029] In this specification, the quantifiers "plurality" and "multiple" refer to one or more than one element.

[0030] The scheme of the present invention is further described below in conjunction with the accompanying drawings of the embodiments.

[0031] Figure 1 FIG. 2 is a three-dimensional schematic diagram of a wafer edge defect detection device according to an embodiment of the present invention. Figure 1As shown, the wafer edge defect detection device includes a side detection module 2, a chamfer detection module 3, and a chamfer detection module 4. The side detection module 2 is configured to collect image data of the side of the wafer to be tested based on the scattering of the side of the wafer 1 to be tested. The chamfer detection module 3 is configured to collect image data of the chamfer of the wafer to be tested based on the scattering of the chamfer of the wafer to be tested. The chamfer detection module 4 is configured to collect image data of internal defects of the edge of the wafer to be tested through transmission of a short-wave infrared light source. In one embodiment of the present invention, the wafer edge defect detection device also includes a carrier, and the side detection module 2, the chamfer detection module 3 and the transmission detection module 4 are arranged on the carrier. In one embodiment of the present invention, the wafer edge defect detection device also includes a positioning device arranged on the carrier, which is used for fixing, rotating and positioning the wafer to be tested. In one embodiment of the present invention, the wafer edge defect detection device also includes a data processing module, which is configured to receive the image data collected by the side detection module 2, the chamfer detection module 3 and the transmission detection module 4, and process and generate a detection report containing wafer edge defects.

[0032] Figure 2 FIG. 2 shows a schematic diagram of a wafer edge detection area according to an embodiment of the present invention. Figure 2 As shown, the edge detection area of ​​the wafer 1 to be tested includes the side area 11, the chamfer area 12 and the inner edge 13. The side detection module 2 is used to detect the side (apex) area 11. The main defects of the side area 11 include edge collapse, scratches, cracks, and a small amount of dirt; the chamfer detection module 3 is used to detect the chamfer (shoulder) area 12. The defects of the chamfer area 12 include scratches, cracks, edge collapse, dirt, stacking faults, slip lines, etc.; the transmission detection module 4 is used to detect the inner edge 13. The defects of the inner edge 13 mainly include cracks and bubbles. Some defects of the inner edge 13 will extend to the surface of the wafer. The defects can be comprehensively judged based on the detection results of the side detection module 2, the chamfer detection module 3 and the transmission detection module 4. Larger defects, such as a corner of the entire edge collapse, are reflected in the detection results of the three modules.

[0033] Figure 3 FIG. 2 shows a schematic diagram of the structure of a side detection module according to an embodiment of the present invention. Figure 3 As shown, the side detection module 2 includes a U-shaped light source 21, a reflector 22, a first telecentric lens 23, a first line scan camera 24, and an electric Z axis 25. The wafer 1 to be tested is moved to a set position by a positioning device for detection. The light beam of the U-shaped light source 21 is scattered by the wafer 1 to be tested and passes through the reflector 22 before entering the first telecentric lens 23 and the first line scan camera 24 to complete imaging. Figure 4 FIG. 1 is a schematic diagram showing the structure of a U-shaped light source according to an embodiment of the present invention. Figure 4As shown, the U-shaped light source 21 is divided into four areas, namely the first area 211, the second area 212, the third area 213 and the fourth area 214. The four areas respectively include a group of light bars, each group of light bars includes 2 light bars, and the light bars are used to emit lighting beams. In one embodiment of the present invention, each light bar may include a plurality of lamp beads; the lamp beads may be blue light LED lamp beads with a wavelength of 420nm-500nm. The power of the light bars in the four areas is provided by the first power device 215, the second power device 216, the third power device 217 and the fourth power device 218 respectively. The distribution angle of the light bars in each area is different, and the power of the light bars in different areas can be controlled independently. The power of the four areas can be set according to the shape of the edge chamfer of the wafer. For example, if the edge chamfer shape is single, only the light bars in the first area 211 and the second area 212 can be used for lighting according to the needs; if the edge chamfer shape is complex, it is necessary to use all four areas for lighting, and the imaging grayscale of each lighting area is consistent through the respective power settings. In one embodiment of the present invention, the U-shaped light source 21 also includes a first lens, a light homogenizer and an outer shell; the first lens is arranged in front of the four groups of light bars, and the first lens is used to reduce the divergence angle of the illumination light beam; the light homogenizer is arranged in front of the first lens; the outer shell includes a U-shaped part and a vertical part; the light homogenizer constitutes the inner surface of the U-shaped light source, and the outer shell constitutes the outer surface of the U-shaped light source, and the four groups of light bars and the first lens are arranged in the area surrounded by the outer shell and the light homogenizer. Figure 5 A schematic diagram of a light hole of a U-shaped light source according to an embodiment of the present invention is shown. A light hole 219 is arranged in the center of the housing and the light homogenizer. The light hole allows light scattered by the side of the wafer to pass through to achieve imaging.

[0034] In one embodiment of the present invention, the reflector 22 is a right-angle reflector, which is used to reflect scattered light from the side of the wafer to be tested. The reflective surface of the reflector 22 can be coated with a broadband dielectric film, and the dielectric film reflects a wavelength band of 400nm-750nm with an average reflectivity of >99%.

[0035] In one embodiment of the present invention, the first telecentric lens 23 is used to receive scattered light reflected by the reflector. The magnification can be selected based on the balance between the camera target surface and the wafer thickness and diameter tolerance. The commonly available magnification is 1X-4X, and the highest single pixel resolution of less than 1um can be achieved, which can meet the existing side edge collapse detection accuracy requirements.

[0036] In one embodiment of the present invention, the first line scan camera 24 is arranged on the first telecentric lens 23. The main parameters of the first line scan camera include: the resolution can be 6560x256, the pixel size can be 3.5umx3.5um, the maximum frame rate can be 160KHz, the light band responded by the photosensitive chip is 400nm-1100nm, and it has TDI time delay integration function, which can effectively improve the wafer detection efficiency.

[0037] Figure 6 A three-dimensional schematic diagram of a chamfer detection module according to an embodiment of the present invention is shown. Figure 7 The optical path schematic diagram of the chamfer detection module of an embodiment of the present invention is shown. As shown in the figure, the chamfer detection module 3 includes a second telecentric lens 31, a second line scan camera 32 and a second illumination light source 33. The chamfer detection module adopts a dark field detection method. When the surface of the wafer to be tested is flat and has no defects, the imaging field of view is completely black. When there are defects such as cracks and scratches, scattered light with surface information will be generated and collected by the second line scan camera 32 to form an image of the defect. In one embodiment of the present invention, the angle between the light beam emitted by the second illumination light source 33 and the surface of the wafer 1 to be tested is about 50°. The second illumination light source 33 uses a high-brightness blue light LED to cooperate with the second lens to obtain an approximately collimated illumination light source, which reduces the loss of light power under the same situation and improves the illumination of the detection area. The arrangement of the lamp beads used in the second illumination light source 33 adopts a linear arrangement to match the imaging area of ​​the second line scan camera 32. The second illumination light source 33 uses a blue light LED mainly because of two factors: the wavelength of blue light is relatively short, and the diffraction limit size is smaller, which is conducive to improving the resolution of the detection system; within the blue light band, the quantum efficiency of the camera is relatively high. In one embodiment of the present invention, the second telecentric lens 31 is used to receive the scattered light of the light beam emitted by the second illumination light source 33 on the surface of the wafer 1 to be tested; due to the presence of relatively fine cracks in the chamfered area, the second telecentric lens 31 usually adopts a lens magnification of 2x-6x, and the single pixel resolution is 1.75um-0.58um. Usually, defects occupying more than 3 pixels can be stably detected, so the maximum detection accuracy of the chamfer detection module is about 1.8um. ​​In one embodiment of the present invention, the second line scan camera 32 is arranged on the second telecentric lens 31, and the light band responded by the second line scan camera 32 is 400nm-1100nm; the imaging chip size of the second line scan camera 32 can be 22mm, and the detection range is 11mm-3.7mm. In order to ensure that the entire imaging field of view is bright and uniform, the collimated spot size of the second illumination light source 33 is 15mm, and the geometric center of the spot needs to be located on the main optical axis of the lens.

[0038] Figure 8 FIG. 2 shows a schematic diagram of the structure of a transmission detection module according to an embodiment of the present invention. Figure 8As shown, the transmission detection module 4 includes a short-wave infrared light source 41, a short-wave infrared lens 42 and a short-wave line scan camera 43. In one embodiment of the present invention, the short-wave infrared light source 41 is arranged under the wafer 1 to be tested, and the short-wave infrared light source 41 uses a halogen lamp light source, and the light band emitted is 400nm-1700nm; the short-wave infrared light source 41 is located inside the light box, and the maximum power of the light box can be 50W, and the power can be adjusted according to the gray value of the imaging, and the power size is generally suitable for the imaging gray value to reach 60%-70% of the saturation value; the light inside the light box is guided to the square light-emitting surface through the optical fiber, and the size of the light-emitting surface can be 30mm*30mm. In one embodiment of the present invention, the short-wave infrared lens 42 is used to receive the light beam after the short-wave infrared light source transmits the wafer to be tested; the short-wave line scan camera 43 is arranged above the short-wave infrared lens 42, and the light band responded by the short-wave line scan camera 43 is 400nm-1700nm. The original distribution of the light beam of the short-wave infrared light source 41 is close to uniform distribution. If there are no defects in the wafer structure, the influence of each position on the light is the same, and the distribution imaging of the light after passing through the wafer is still uniform. If there are defects such as cracks or bubbles, the scattering at this position will become stronger, and corresponding dark stripes or dark circular spots will be formed at this position when imaging on the short-wave line scan camera 43.

[0039] In one embodiment of the present invention, the side detection module 2, the chamfer detection module 3 and the transmission detection module 4 may all include a moving device for controlling the movement of the module.

[0040] Fig. 9 FIG. 1 is a flow chart showing a method for detecting wafer edge defects according to an embodiment of the present invention. Fig. 9 As shown, the method includes the following steps: using a positioning device to fix and position the wafer to be tested; moving the side detection module, the chamfer detection module and the transmission detection module to the detection position; using the positioning device to rotate the wafer to be tested, and completing the detection of the side detection module, the chamfer detection module and the transmission detection module in sequence; analyzing the detection results of the side detection module, the chamfer detection module and the transmission detection module, determining the defect location and defect type, and generating a detection report.

[0041] Fig.10 FIG. 1 is a schematic diagram showing a defect determination logic of a wafer edge defect detection method according to an embodiment of the present invention. Fig.10As shown in the figure, there are two ways to analyze the detection results of the side detection module, chamfer detection module and transmission detection module: one is to judge the defects detected by the three detection modules according to their morphology, and judge the type by the difference in their physical morphology. This judgment can obtain basic information, such as position, length, etc., but cannot fully judge the extension of the defect, such as whether the side defect extends to the surface, and whether the surface crack originates from the inside or the surface. Through the second method, further detection can be carried out by using the comprehensive judgment of the detection results of the three modules. For the second method, first determine whether the positions of the defects detected by different detection modules are consistent. If the positions are inconsistent, the defects are small, and if the positions are consistent, the defects are large; when the positions are consistent, determine whether the defects are surface defects or internal defects. For example, if the transmission detection module and the chamfer detection module detect cracks at the same time, and the width detected by the transmission detection module is larger than that detected by the chamfer detection module, it can be judged that the crack originates from inside the wafer; if the transmission detection module and the side detection module detect cracks at the same time, and the width detected by the transmission detection module is smaller than that detected by the side detection module, it can be judged that the crack is located on the surface of the wafer; if the chamfer detection module and the side detection module detect scratches at the same time, and the positions of the two are consistent, it can be judged that the defect is larger and the chamfer scratch extends to the side.

[0042] The wafer edge defect detection device provided by the present invention adopts a bright field lighting method for the side of the wafer, which solves the problem of stray light easily generated by the dark field method, provides a stable and uniform imaging background, and greatly improves the accuracy of side edge detection; adopts a dark field lighting method for the chamfered part of the wafer, which can effectively improve the difference of the defect image in the area, which is conducive to the stable and accurate detection of defects in the area; adopts a short-wave infrared light source for defects inside the edge, and detects through transmission imaging, which can effectively solve the problem that visible light cannot detect internal defects; and comprehensively judges defects at the same position through three detection methods, reducing the possibility of misjudgment.

[0043] Although various embodiments of the present invention are described above, it should be understood that they are presented as examples only and not as limitations. It is obvious to those skilled in the relevant art that various combinations, modifications and changes can be made thereto without departing from the spirit and scope of the present invention. Therefore, the breadth and scope of the present invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should only be defined according to the technical solutions and their equivalents.

Claims

1. A wafer edge defect detection device, characterized in that: include: A side detection module, which is configured to collect image data of the side of the wafer to be tested based on scattering of the side of the wafer to be tested, the side detection module comprising a U-shaped light source, the U-shaped light source being used to illuminate the side of the wafer at different angles; A chamfer detection module, which is configured to collect image data of the chamfer of the wafer to be tested based on the scattering of the chamfer of the wafer to be tested; And a transmission detection module, which is configured to collect image data of internal defects at the edge of the wafer to be tested through the transmission of a short-wave infrared light source.

2. The wafer edge defect detection device according to claim 1, characterized in that: Also includes: A carrying platform, on which the side detection module, the chamfer detection module and the transmission detection module are arranged; and / or A positioning device, which is arranged on the carrier and is used for fixing, rotating and positioning the wafer to be tested; and / or The data processing module is configured to receive the image data collected by the side detection module, the chamfer detection module and the transmission detection module, and process and generate a detection report containing wafer edge defects.

3. The wafer edge defect detection device according to claim 1, characterized in that: The side detection module also includes A reflector, wherein the reflector is a right-angle reflector and is used to reflect scattered light from the side of the wafer to be tested; A first telecentric lens, wherein the first telecentric lens is used to receive scattered light reflected by the reflector; as well as A first line scan camera is arranged on the first telecentric lens, and the first line scan camera responds to a light band of 400nm-1100nm.

4. The wafer edge defect detection device according to claim 1, characterized in that: The U-shaped light source comprises: A first lighting source, wherein the first lighting source comprises four groups of light bars; A first lens, the first lens is arranged before the four groups of light bars, and the first lens is used to reduce the divergence angle of the illumination light beam; a light homogenizer, the light homogenizer being arranged before the first lens; and A housing, the housing comprising a U-shaped portion and a vertical portion; Light holes are arranged at the centers of the housing and the light homogenizer.

5. The wafer edge defect detection device according to claim 4, characterized in that: Each set of light bars comprises two light bars; and / or Each light bar includes a plurality of light beads; and / or The lamp beads are blue light LED lamp beads.

6. The wafer edge defect detection device according to claim 1, characterized in that: The chamfer detection module comprises: A second illumination light source, wherein the angle between the light beam emitted by the second illumination light source and the surface of the wafer to be measured is 50°; A second telecentric lens, the second telecentric lens is used to receive scattered light of the light beam emitted by the second illumination light source on the surface of the wafer to be measured; and A second line scan camera is arranged on the second telecentric lens, and the second line scan camera responds to a light band of 400nm-1100nm.

7. The wafer edge defect detection device according to claim 6, characterized in that: The second illumination light source is a blue LED light source; and / or The second illumination light source includes a second lens.

8. The wafer edge defect detection device according to claim 1, characterized in that: The transmission detection module comprises: A short-wave infrared light source, which is arranged under the wafer to be tested and emits light in the wavelength range of 400nm-1700nm; A short-wave infrared lens, the short-wave infrared lens is used to receive the light beam after the short-wave infrared light source transmits through the wafer to be tested; and A short-wave line scan camera is arranged on the short-wave infrared lens, and the short-wave line scan camera responds to a light band of 400nm-1700nm.

9. A detection method based on the wafer edge defect detection device according to any one of claims 1 to 8, characterized in that: The steps include: Use a positioning device to fix and position the wafer to be tested; Move the side inspection module, the chamfer inspection module and the transmission inspection module to the inspection position; The positioning device is used to rotate the wafer to be tested, and the side detection module, the chamfer detection module and the transmission detection module are sequentially completed; Analyze the inspection results of the side inspection module, chamfer inspection module and transmission inspection module, determine the defect location and defect type, and generate an inspection report.

10. The wafer edge defect detection method according to claim 9, characterized in that: Analyze the test results of the side inspection module, chamfer inspection module and transmission inspection module to determine the defect location and defect type including: Determine the defect morphology according to the defects detected by the side detection module, the chamfer detection module and the transmission detection module respectively; The size of the defect is determined based on the consistency of the defect positions detected by different detection modules; when the defect positions are consistent, it is determined whether the defect is a surface defect or an internal defect, and the extension of the defect is determined.

Images