Thin film capacitor
By adopting a metal grid position layout in the film capacitor, the capacity loss problem caused by the connection areas of the thickened metal coating and the non-thickened area is solved, and the reliability and long-term stable performance of the capacitor are improved.
Patent Information
- Application Number
- CN202411138668.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-19
- Publication Date
- 2025-02-18
AI Technical Summary
The existing metallized film capacitors have problems such as large capacity loss or fast attenuation, which cannot meet the needs of use. It is mainly because the connection areas of the thickened zone and the non-thickened zone of the metal plating are prone to defects, resulting in capacity loss.
By using a metal grid position layout in the film capacitor, the non-high-quad-resistance area of one metal plating layer and the high-quad-resistance area connection area correspond to at least one-order metal film grid area of another metal plating layer, thereby reducing self-healing due to defects Capacitor capacity loss caused.
It effectively reduces capacitor capacity loss, improves the reliability of the capacitor, and ensures the long-term stable performance of the capacitor.
Smart Images
Figure CN119480447A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of capacitors, and in particular to a film capacitor. Background Art
[0002] Metallized film capacitors are increasingly used in industrial control, new energy, automotive electronics, rail transit, power grids and other fields. At the same time, the failure safety issues of metallized film capacitors are becoming more and more prominent. Metallized film capacitors are formed by winding metallized films in pairs to improve safety. In related technologies, various metallized films have been developed, but existing metallized film capacitors still have problems with large capacity loss or fast attenuation, which cannot meet the use requirements.
[0003] Among them, the metal coating of the metallized film is provided with a thickened area, i.e., a non-high square resistance area, so as to play a role in sealing and moisture-proofing when a large current is passed through and the package is wound at the same time. There is a height difference between the thickened area of the metal coating and the non-thickened area, i.e., the high square resistance area. Since the dielectric film is prone to defects in the thickened area of the metal coating and the connection area between the thickened area and the non-thickened area during the process of metal film evaporation and slitting, the non-thickened area of the metal coating of the other metallized film is easily punctured, resulting in capacity loss. That is, due to the deviation of the evaporation tooling and the parameter deviation during the evaporation process, the metal in the thickened area (non-high square resistance area) will diffuse to the non-thickened area (high square resistance area), and defects will occur in the connection area between the thickened area and the non-thickened area, making the non-thickened area of the metal coating of the other metallized film easily punctured, resulting in capacity loss. Summary of the invention
[0004] The present invention aims to solve at least one of the technical problems in the above-mentioned technology to a certain extent. To this end, the purpose of the present invention is to provide a thin film capacitor, through the layout of the metal grid position, so that the non-high square resistance area of one metal coating layer and the connection area with the high square resistance area and the non-high square resistance area correspond to at least one order metal film grid area of another metal coating layer, thereby reducing the capacitor capacity loss caused by defect self-healing in the grid area of the other metal coating layer and improving the reliability of the capacitor.
[0005] To achieve the above-mentioned object, an embodiment of the present invention provides a thin film capacitor, comprising a dielectric film, a first metal coating layer and a second metal coating layer; the first metal coating layer covers a first film surface of the dielectric film, and the second metal coating layer covers a second film surface of the dielectric film;
[0006] The first metal coating is provided with a non-high square resistance region and a high square resistance region connected to the non-high square resistance region, the second metal coating is provided with a high square resistance region or a non-high square resistance region and a high square resistance region connected to the non-high square resistance region, a metal grid surrounded by a transverse insulating gap and a longitudinal insulating gap is formed on the high square resistance region, and the metal grids are connected by fuses;
[0007] The non-high square resistance region of the first metal coating is opposite to the high square resistance region of the second metal coating, the non-high square resistance region of the first metal coating is connected to the high square resistance region, and the non-high square resistance region corresponds to at least one first-order metal film grid region of the second metal coating, the non-high square resistance region and the high square resistance region are connected by a connecting line extending from the non-high square resistance region to the high square resistance region along the film width direction, and the width of the non-high square resistance region and the high square resistance region along the film width is 0-6mm;
[0008] The edge of the connecting region between the non-high square resistance region and the high square resistance region of the first metal plating layer close to the high square resistance region is opposite to the longitudinal insulating gap of the metal grid of the second metal plating layer.
[0009] According to a thin film capacitor of an embodiment of the present invention, since the non-high square resistance area of the first metal coating layer is connected to the high square resistance area, and the non-high square resistance area corresponds to at least a first-order metal film grid area of the second metal coating layer, the width of the connection area between the non-high square resistance area and the high square resistance area is 0-6mm along the film width, so that due to the deviation of the evaporation tooling and the parameter deviation in the evaporation process, the metal in the non-high square resistance area will diffuse to the high square resistance area, and defects are likely to occur in the non-high square resistance area of the metal coating layer and the connection area between the non-high square resistance area and the high square resistance area. When the high square resistance area of the other metal coating layer is broken down, only the first-order metal grid capacity is lost, thereby reducing the capacitor capacity loss caused by self-healing of defects in the grid area of the other metal coating layer, thereby improving the reliability of the capacitor.
[0010] In addition, a film capacitor according to the above embodiment of the present invention may also have the following additional technical features:
[0011] Optionally, the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 0-2 mm.
[0012] Optionally, the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 2-4 mm.
[0013] Optionally, the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 4-6 mm.
[0014] Specifically, the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 6 mm.
[0015] Optionally, the first metal coating and the second metal coating are both provided with a non-high square resistance region and a high square resistance region connected to the non-high square resistance region.
[0016] Specifically, the non-high square resistance region is arranged at one end portion in the film width direction and extends along the film length direction.
[0017] Optionally, the first metal coating has non-high square resistance regions at both ends in the film width direction and extends along the film length direction, and a margin is provided in the middle of the film width; the second metal coating has a high square resistance region.
[0018] Optionally, the first metal coating layer and the second metal coating layer are each provided with at least two adjacent non-high square resistance regions and a high square resistance region connected to the non-high square resistance region.
[0019] Specifically, the at least two adjacent non-high square resistance regions are arranged at one end portion in the film width direction and extend along the film length direction.
[0020] Optionally, the first metal coating layer is evaporated on the front surface of the dielectric film, and the second metal coating layer is evaporated on the back surface of the dielectric film. BRIEF DESCRIPTION OF THE DRAWINGS
[0021] Figure 1 This is a schematic diagram of the structure of Embodiment 1 of the present invention;
[0022] Figure 2 is another structural schematic diagram of the first embodiment of the present invention;
[0023] Figure 3 This is a schematic diagram of the structure of Embodiment 2 of the present invention;
[0024] Figure 4 This is a schematic diagram of the structure of the third embodiment of the present invention.
[0025] Description of symbols
[0026] A first metallized film 1, a second metallized film 2, a non-high square resistance region (11, 21), a high square resistance region (12, 22), a margin (13, 23), a metal grid (14, 24), a transverse insulating gap (141, 241), a longitudinal insulating gap (142, 242), and a fuse (15, 25). DETAILED DESCRIPTION
[0027] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are intended to be used to explain the present invention, and should not be construed as limiting the present invention.
[0028] In order to better understand the above technical solution, exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.
[0029] An embodiment of the present invention provides a thin film capacitor, comprising a dielectric film, a first metal coating and a second metal coating; the first metal coating covers a first film surface of the dielectric film, and the second metal coating covers a second film surface of the dielectric film.
[0030] The first metal coating is provided with a non-high square resistance area and a high square resistance area connected to the non-high square resistance area, the second metal coating is provided with a high square resistance area or a non-high square resistance area and a high square resistance area connected to the non-high square resistance area, a metal grid surrounded by a horizontal insulating gap and a vertical insulating gap is formed on the high square resistance area, and the metal grids are connected by fuses.
[0031] The non-high square resistance area of the first metal coating is opposite to the high square resistance area of the second metal coating, the non-high square resistance area of the first metal coating is connected to the high square resistance area, and the non-high square resistance area corresponds to at least one first-order metal film grid area of the second metal coating, the non-high square resistance area and the high square resistance area are connected to each other by a connecting line between the non-high square resistance area and the high square resistance area extending to the high square resistance area along the film width direction, and the width of the non-high square resistance area and the high square resistance area along the film width is 0-6mm.
[0032] The edge of the connecting area between the non-high square resistance area and the high square resistance area of the first metal coating layer close to the high square resistance area is opposite to the longitudinal insulating gap of the metal grid of the second metal coating layer, so as to minimize the capacitor capacity loss caused by capacitor self-healing and improve the reliability of the capacitor.
[0033] Since the non-high square resistance area of the first metal coating is connected to the high square resistance area, and the non-high square resistance area corresponds to at least a first-order metal film grid area of the second metal coating, the width of the connection area between the non-high square resistance area and the high square resistance area along the film width is 0-6mm, so that due to the deviation of the evaporation tooling and the parameter deviation in the evaporation process, the metal in the non-high square resistance area will diffuse to the high square resistance area, and it is easy to produce defects in the non-high square resistance area of the metal coating and the connection area between the non-high square resistance area and the high square resistance area. When the high square resistance area of the other metal coating is broken down, only the first-order metal grid capacity is lost, reducing the capacitor capacity loss caused by defect self-healing in the grid area of the other metal coating, thereby improving the reliability of the capacitor.
[0034] Optionally, the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 0-2 mm; or the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 2-4 mm; or the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 4-6 mm. Preferably, the width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 6 mm.
[0035] Specifically, the capacitor film is 50 mm wide, and only one non-high square resistance area (thickened area) is set at the edge of the film width. The length of the non-high square resistance area along the film width is 3 mm, and the width of the grid unit along the film length is 3 mm.
[0036] The longitudinal insulating gap of the metal grid of one of the metallized films of the capacitor of Scheme A is set at the connection position between the non-high square resistance area (thickened area) of the other metallized film and the high square resistance area, extending to 2mm in the direction of the high square resistance area, and only a first-order grid is set, and the number of capacitors is 10.
[0037] The longitudinal insulating gap of the metal grid of one of the metallized films of the capacitor of Scheme B is set at the connection position between the non-high square resistance area (thickened area) of the other metallized film and the high square resistance area, extending to 4mm in the direction of the high square resistance area, and only a first-order grid is set, and the number of capacitors is 10.
[0038] The longitudinal insulating gap of the metal grid of one of the metallized films of the capacitor of Scheme C is set at the connection position between the non-high square resistance area (thickened area) of the other metallized film and the high square resistance area, extending to 6mm in the direction of the high square resistance area, and only a first-order grid is set, and the number of capacitors is 10.
[0039] The longitudinal insulating gap of the metal grid of one of the metallized films of the capacitor of Scheme D is set at the connection position between the non-high square resistance area (thickened area) of the other metallized film and the high square resistance area, extending to 7mm in the direction of the high square resistance area, and only a first-order grid is set, and the number of capacitors is 10.
[0040] After endurance at 105c-250v / um-1000h, the capacity loss rate of the capacitor is as follows:
[0041]
[0042] Embodiment 1
[0043] like Figure 1As shown, a film capacitor of the first embodiment of the present invention is formed by winding a metallized film, that is, by winding a first metallized film 1 and a second metallized film 2. The two metallized films have the same structure. The first metallized film 1 and the second metallized film 2 are respectively composed of a dielectric film and a metal coating evaporated on the dielectric film. Specifically, the first metallized film 1 is composed of a first metal coating layer covering a first dielectric film, and the second metallized film 2 is composed of a second metal coating layer covering a second dielectric film.
[0044] The first metal coating of the first metallized film 1 and the second metal coating of the second metallized film 2 are both provided with a non-high square resistance region (11, 21) and a high square resistance region (12, 22) connected to the non-high square resistance region (11, 21). Specifically, the non-high square resistance region (11, 21) is provided at one end portion in the film width direction and extends along the film length direction.
[0045] The first metallized film 1 and the second metallized film 2 are respectively provided with margins (13, 23) at the ends of the other side opposite to the side where the non-high square resistance region (11, 21) is provided. When the first metallized film 1 and the second metallized film 2 are wound in pairs, the first metallized film 1 and the second metallized film 2 are opposite to each other at staggered sides, the non-high square resistance region 11 of the first metallized film 1 is opposite to the margin 23 of the second metallized film 2 at staggered sides, and the non-high square resistance region 21 of the second metallized film 2 is opposite to the margin 13 of the first metallized film 1 at staggered sides.
[0046] A metal grid (14, 24) surrounded by a transverse insulating gap (141, 241) and a longitudinal insulating gap (142, 242) is formed on the high square resistance region (12, 22), and the metal grids (14, 24) are connected via fuses (15, 25).
[0047] The non-high square resistance region 11 of the first metal coating of the first metallized film 1 is opposite to the high square resistance region 22 of the second metal coating of the second metallized film 2, wherein the connection area between the non-high square resistance region 11 and the high square resistance region 12 of the first metallized film 1 corresponds to the first-order metal grid 24 area of the second metallized film 2.
[0048] Specifically, the end position of the non-high square resistance area 11 of the first metal coating of the first metallized film 1 is taken as the starting point, and within 6 mm in the direction of the high square resistance area 12, the high square resistance area 22 of the second metallized film 2 is corresponding, and a longitudinal insulating gap 242 is provided in the high square resistance area 22, and at least one metal grid 24 is provided along the film width direction in the area between the longitudinal insulating gap 242 and the margin 23.
[0049] like Figure 2As shown, the first metallized film 1 and the second metallized film 2 share a dielectric film, that is, metal coatings are respectively deposited on the front and back surfaces of the dielectric film. Specifically, the first metal coating is deposited on the front surface of the dielectric film, and the second metal coating is deposited on the back surface of the dielectric film.
[0050] Embodiment 2
[0051] like Figure 3 As shown, a film capacitor of the second embodiment of the present invention is formed by winding a metallized film, that is, by winding a first metallized film 1 and a second metallized film 2. The first metallized film 1 and the second metallized film 2 are respectively composed of a dielectric film and a metal coating evaporated on the dielectric film. Specifically, the first metallized film 1 is composed of a first metal coating covering a first dielectric film, and the second metallized film 2 is composed of a second metal coating covering a second dielectric film. Of course, the first metallized film 1 and the second metallized film 2 can share a dielectric film, that is, metal coatings are respectively evaporated on the front and back of the dielectric film. Specifically, the first metal coating is evaporated on the front of the dielectric film, and the second metal coating is evaporated on the back of the dielectric film.
[0052] The first metallized film 1 is provided with non-high square resistance regions 11 at both ends of the film width direction and extends along the film length direction, and a margin 13 is provided at the middle of the film width of the first metallized film 1. The second metallized film 2 is provided with a high square resistance region 22, and the second metallized film 2 is provided with margins 23 at both ends of the film width direction, and the high square resistance region 22 is formed between the two margins 23. Metal grids (14, 24) surrounded by transverse insulating gaps (141, 241) and longitudinal insulating gaps (142, 242) are formed on the high square resistance regions (12, 22), and the metal grids (14, 24) are connected by fuses (15, 25).
[0053] The non-high square resistance region 11 of the first metal coating of the first metallized film 1 is opposite to the high square resistance region 22 of the second metal coating of the second metallized film 2, wherein the connection area between the non-high square resistance region 11 and the high square resistance region 12 of the first metallized film 1 corresponds to the first-order metal grid 24 area of the second metallized film 2.
[0054] Specifically, the non-high square resistance regions 11 on both sides of the first metallized film 1 are connected to the high square resistance region 12 respectively, with the end position of the non-high square resistance region 11 as the starting point, that is, the connection position between the non-high square resistance region 11 and the high square resistance region 12 as the starting point, within 6 mm in the direction of the high square resistance region 12 corresponding to the high square resistance region 22 of the second metallized film 2, a longitudinal insulating gap 242 is provided in the high square resistance region 22, and at least one metal grid 24 is provided along the film width direction in the area between the longitudinal insulating gap 242 and the margin 23.
[0055] Embodiment 3
[0056] like Figure 4 As shown, a film capacitor of the third embodiment of the present invention is formed by winding a metallized film, that is, by winding a first metallized film 1 and a second metallized film 2. The first metallized film 1 and the second metallized film 2 have the same structure, and the first metallized film 1 and the second metallized film 2 are respectively composed of a dielectric film and a metal coating evaporated on the dielectric film. Specifically, the first metallized film 1 is composed of a first metal coating covering a first dielectric film, and the second metallized film 2 is composed of a second metal coating covering a second dielectric film. Of course, the first metallized film 1 and the second metallized film 2 can share a dielectric film, that is, metal coatings are respectively evaporated on the front and back of the dielectric film. Specifically, the first metal coating is evaporated on the front of the dielectric film, and the second metal coating is evaporated on the back of the dielectric film.
[0057] The first metal coating layer and the second metal coating layer are each provided with at least two adjacent non-high square resistance regions 11 and a high square resistance region 12 connected to the non-high square resistance region 11, and the high square resistance region 12 is located between the two adjacent non-high square resistance regions 11. At least two adjacent non-high square resistance regions 11 are provided at one end portion in the film width direction and extend along the film length direction.
[0058] The first metallized film 1 and the second metallized film 2 are provided with margins (13, 23) at the ends of the other side opposite to the side where the non-high square resistance region (11, 21) is provided. When the first metallized film 1 and the second metallized film 2 are wound, the first metallized film 1 and the second metallized film 2 are opposite to each other at staggered sides, the non-high square resistance region 11 of the first metallized film 1 is opposite to the margin 23 of the second metallized film 2 at staggered sides, and the non-high square resistance region 21 of the second metallized film 2 is opposite to the margin 13 of the first metallized film 1 at staggered sides.
[0059] A metal grid (14, 24) surrounded by a transverse insulating gap (141, 241) and a longitudinal insulating gap (142, 242) is formed on the high square resistance region (12, 22), and the metal grids (14, 24) are connected via fuses (15, 25);
[0060] The non-high square resistance region 11 of the first metal coating of the first metallized film 1 is opposite to the high square resistance region 22 of the second metal coating of the second metallized film 2, wherein the connection area between the non-high square resistance region 11 and the high square resistance region 12 of the first metallized film 1 corresponds to the first-order metal grid 24 area of the second metallized film 2.
[0061] Specifically, the end position of the non-high square resistance area 11 of the metal plating layer of the first metallized film 1 is taken as the starting point, and within 6 mm in the direction of the high square resistance area 12, the high square resistance area 22 of the second metallized film 2 is corresponding. A longitudinal insulating gap 242 is provided in the high square resistance area 22, and at least one metal grid 24 is provided along the film width direction in the area between the longitudinal insulating gap 242 and the margin 23.
[0062] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.
[0063] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0064] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0065] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0066] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms should not be understood as necessarily being directed to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification.
[0067] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.
Claims
1. A film capacitor, characterized in that: It comprises a dielectric film, a first metal coating and a second metal coating; the first metal coating is covered on a first film surface of the dielectric film, and the second metal coating is covered on a second film surface of the dielectric film; The first metal coating is provided with a non-high square resistance region and a high square resistance region connected to the non-high square resistance region, the second metal coating is provided with a high square resistance region or a non-high square resistance region and a high square resistance region connected to the non-high square resistance region, a metal grid surrounded by a transverse insulating gap and a longitudinal insulating gap is formed on the high square resistance region, and the metal grids are connected by fuses; The non-high square resistance region of the first metal coating is opposite to the high square resistance region of the second metal coating, the non-high square resistance region of the first metal coating is connected to the high square resistance region, and the non-high square resistance region corresponds to at least one first-order metal film grid region of the second metal coating, the non-high square resistance region and the high square resistance region are connected by a connecting line extending from the non-high square resistance region to the high square resistance region along the film width direction, and the width of the non-high square resistance region and the high square resistance region along the film width is 0-6mm; The edge of the connecting region between the non-high square resistance region and the high square resistance region of the first metal plating layer close to the high square resistance region is opposite to the longitudinal insulating gap of the metal grid of the second metal plating layer.
2. A film capacitor according to claim 1, characterized in that: The width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 0-2 mm.
3. A film capacitor according to claim 1, characterized in that: The width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 2-4 mm.
4. A film capacitor according to claim 1, characterized in that: The width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 4-6 mm.
5. A film capacitor according to claim 4, characterized in that: The width of the connecting region between the non-high square resistance region and the high square resistance region along the film width is 6 mm.
6. A film capacitor according to claim 1, characterized in that: The first metal coating layer and the second metal coating layer are both provided with a non-high square resistance region and a high square resistance region connected to the non-high square resistance region.
7. A film capacitor according to claim 6, characterized in that: The non-high square resistance region is arranged at one end portion in the film width direction and extends along the film length direction.
8. A film capacitor according to claim 1, characterized in that: The first metal coating has non-high square resistance regions at both ends in the film width direction and extends along the film length direction, and a margin is provided in the middle of the film width; the second metal coating has a high square resistance region.
9. A film capacitor according to claim 1, characterized in that: The first metal coating layer and the second metal coating layer are each provided with at least two adjacent non-high square resistance regions and a high square resistance region connected to the non-high square resistance region.
10. A film capacitor according to claim 9, characterized in that: The at least two adjacent non-high square resistance regions are arranged at one end portion in the film width direction and extend along the film length direction.
11. A film capacitor according to claim 1, characterized in that: The first metal coating layer is evaporated on the front surface of the dielectric film, and the second metal coating layer is evaporated on the back surface of the dielectric film.