Semiconductor packaging method, semiconductor packaging structure and scribing film

Abstract

The invention relates to a semiconductor packaging method, a semiconductor packaging structure and a scribing film. The semiconductor packaging method comprises the following steps: providing a wafer, and attaching a scribing film on the wafer; sequentially executing a scribing process, a peptizing process, a baking process and a packaging process on the wafer attached with the scribing film to obtain a semiconductor packaging structure; the scribing film comprises a modified base film and an adhesive layer which are laminated, the water absorption rate of the glue layer is lower than that of the blue film; the film expansion capability of the modified base film after the baking process is greater than that of a blue film, and the critical temperature of irreversible plastic deformation of the modified base film is greater than a target threshold value. According to the semiconductor packaging method, the technological process can be saved, and defects caused by moisture vaporization are avoided.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a semiconductor packaging method, a semiconductor packaging structure and a dicing film. Background Art

[0002] In the traditional semiconductor packaging process, a laminating machine, a dicing machine, a UV dissolving machine, a sorting and transferring device, an oven, and a flip-chip machine are usually used in sequence to perform the laminating process, dicing process, dissolving process, sorting and transferring process, baking process, and flip-chip process on the wafer to complete the packaging. However, the above process flow is long, the production cycle is long, and more process equipment is involved, resulting in a high packaging cost.

[0003] Moreover, when the integrated circuit chip is damp, the water inside the chip will vaporize due to the rapid rise in temperature during the thermal process such as reflow soldering. The vaporization causes the volume of the water to increase rapidly, thus causing the chip to expand or deform. Summary of the invention

[0004] Based on this, the embodiments of the present application provide a semiconductor packaging method and a semiconductor packaging structure, which can save process steps and avoid defects caused by moisture vaporization.

[0005] According to some embodiments, the present application provides a semiconductor packaging method, including:

[0006] Providing a wafer and attaching a dicing film on the wafer;

[0007] The wafer with the dicing film attached thereto is subjected to a dicing process, a debonding process, a baking process and a packaging process in sequence to obtain a semiconductor packaging structure;

[0008] Among them, the dicing film includes a stacked modified base film and an adhesive layer; the water absorption rate of the adhesive layer is lower than that of the blue film; the film expansion ability of the modified base film after the baking process is greater than that of the blue film, and the critical temperature of the modified base film undergoing irreversible plastic deformation is greater than the target threshold.

[0009] In the semiconductor packaging method of the above embodiment, the dicing film includes a stacked modified base film and a glue layer. Since the water absorption rate of the glue layer is lower than that of the blue film, defects caused by water vaporization can be avoided, thereby reducing the risk of material damage and improving product yield. In addition, since the film expansion capacity of the modified base film after the baking process is greater than that of the blue film, and the critical temperature of the modified base film undergoing irreversible plastic deformation is greater than the target threshold, the sorting and transfer process can be effectively saved, so that the semiconductor packaging structure can be obtained by only sequentially performing the dicing process, the debonding process, the baking process and the packaging process on the wafer after the dicing film is attached, which is conducive to simplifying the process and shortening the process cycle time. And improve the degree of automation of the packaging process. In this way, the process can be simplified, the introduction of jigs and materials can be reduced, thereby effectively reducing equipment use, operation risks and production costs. Compared with the sorting and transfer method, the above-mentioned semiconductor packaging method does not involve the customization of jigs, has strong universality and low difficulty in implementation.

[0010] In some embodiments, the heating temperature range of the baking process includes 100° C.-150° C.; and / or the heating time of the baking process is greater than or equal to 10 h.

[0011] In some embodiments, no volatile substances are generated when the modified base film is subjected to a baking process.

[0012] In some embodiments, attaching a dicing film to a wafer includes: providing a dicing film, the dicing film including a modified base film, an adhesive layer, and a release film that are stacked; peeling off the release film, and attaching the adhesive layer to the wafer;

[0013] Alternatively, an initial base film and a glue layer are stacked on the wafer; the initial base film is treated with a polarization cross-linking modification process to form a modified base film.

[0014] In some embodiments, a debonding process is performed on the wafer after the dicing film is attached, including: using ultraviolet light to cure the adhesive layer; wherein the adhesive peeling force of the adhesive layer after curing is less than 1000mN / 20mm.

[0015] In some embodiments, a dicing process is performed on a wafer with a dicing film attached thereto, including: dicing the wafer to obtain a plurality of semiconductor devices distributed at intervals;

[0016] The wafer with the dicing film attached thereto is subjected to a packaging process, including: flip-chip packaging of the semiconductor device and stripping of the dicing film.

[0017] According to some embodiments, the present application also provides a semiconductor packaging structure, which is prepared using the semiconductor packaging method in any of the above embodiments.

[0018] According to some embodiments, the present application also provides a slicing film, which includes a modified base film, an adhesive layer and a release film stacked in sequence from bottom to top; wherein the water absorption rate of the adhesive layer is lower than that of the blue film; the modified base film has a greater film expansion ability than the blue film after performing a baking process, and the critical temperature of the modified base film undergoing irreversible plastic deformation is greater than the target threshold.

[0019] In the scribe film of the above embodiment, the scribe film includes a stacked modified base film and a glue layer. Since the water absorption rate of the glue layer is lower than that of the blue film, it can avoid defects caused by water vaporization, thereby reducing the risk of material damage and improving product yield. In addition, since the film expansion capacity of the modified base film after the baking process is greater than that of the blue film, and the critical temperature of the modified base film undergoing irreversible plastic deformation is greater than the target threshold, the sorting and transfer process can be effectively saved, so that the semiconductor packaging structure can be obtained by only sequentially performing the scribe process, debonding process, baking process and packaging process on the wafer after the scribe film is attached, which is conducive to simplifying the process and shortening the process cycle time. And improve the degree of automation of the packaging process. In this way, the process can be simplified, the introduction of jigs and materials can be reduced, thereby effectively reducing equipment use, operation risks and production costs. Compared with the sorting and transfer method, the above-mentioned semiconductor packaging method does not involve the customization of jigs, has strong universality and low difficulty in implementation.

[0020] In some embodiments, the adhesive layer has an adhesive peel force of less than 1000 mN / 20 mm after curing.

[0021] In some embodiments, the material of the modified base film includes modified polyolefins; the material of the adhesive layer includes polyacrylates; and / or the material of the release film includes polyethylene terephthalate. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] FIG1 is a schematic diagram of a flow chart of a semiconductor packaging method provided by an embodiment;

[0023] FIG. 2 is a schematic cross-sectional view of a dicing film provided in an embodiment.

[0024] Explanation of reference numerals: 10, dicing film; 101, modified base film; 102, adhesive layer; 103, release film. DETAILED DESCRIPTION

[0025] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings. Preferred embodiments of the present invention are provided in the drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0026] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present invention belongs. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more of the related listed items.

[0027] In the case of using “including”, “having”, and “comprising” described herein, another component may be added unless a clear limiting term such as “only”, “consisting of”, etc. is used. Unless mentioned otherwise, a term in the singular form may include a plural form and should not be understood as being one in number.

[0028] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it can be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. In contrast, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there are no intervening elements or layers.

[0029] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic representations of idealized embodiments (and intermediate structures) of the present disclosure, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Thus, embodiments of the present disclosure should not be limited to the specific shapes of the regions shown herein, but rather include deviations in shapes due to, for example, manufacturing techniques. Thus, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shapes of the regions of the device, and do not limit the scope of the present disclosure.

[0030] The adhesive peeling degree of traditional UV film or blue film is usually between 1000mN / 20mm and 3000mN / 20mm, so traditional UV film or blue film is easily affected by temperature and produces residual adhesive. When the temperature rises, UV fails and the viscosity increases, so it is only suitable for demolding at room temperature. Although traditional UV film or blue film is low in cost, the characteristic that the viscosity changes with temperature limits its application in some fine processes. At the same time, due to the influence of the base film material factors, after long-term high-temperature baking, the base film is prone to irreversible plastic deformation, resulting in weakened film expansion ability. In addition, the irreversible deformation of the base film is prone to extrusion and mutual friction of the chip, resulting in fragmentation (chipping). Fragmentation usually refers to the tiny damage or gaps on the edge or surface of the material during material processing or surface treatment, especially in processes such as cutting, dicing or grinding. For the above reasons, products involving baking processes in related technologies can usually only be realized by sorting and transferring, which is a long and complicated process, involving many process sites, and greatly increasing the risk of operation.

[0031] In the semiconductor packaging process using sorting and transfer, a film laminating machine, a dicing machine, a UV degumming machine, a sorting and transfer equipment, an oven, and a flip-chip machine are usually used in sequence to perform film laminating, dicing, degumming, sorting and transfer, baking, and flip-chip processes on the wafer to complete the packaging. In the above process flow, it is usually necessary to adopt a variety of tooling and materials such as waffle packs, waffle pack adapters, baking clips, baking special carriers (Cassette), UV dicing films, etc., some of which need to be customized, resulting in high costs and long production cycles. In addition, some steps require manual processing (for example, waffle packs in and out of baking clips, baking clips in and out of ovens, and waffle packs transferred to adapters), which poses a risk of damaging materials. Therefore, the above process flow has a long process and a long production cycle, and requires more process equipment, resulting in a high packaging cost.

[0032] Moreover, when the integrated circuit chip is damp, the water inside the chip will vaporize due to the rapid rise in temperature during the thermal process such as reflow soldering. Vaporization causes the volume of water to increase sharply, which causes the chip to expand or deform, resulting in cracking, delamination, peeling, microcracks and other undesirable phenomena inside the chip. Severe expansion or deformation will directly form a popcorn phenomenon, causing the chip to be scrapped. These undesirable phenomena will shorten the life of the chip and the effect will be poor. For typical 2.5D packaging processes, especially products containing high bandwidth memory (HBM), since epoxy materials are easy to absorb moisture, if the water vapor is not dried in time, it is easy to cause product failure at excessively high temperatures.

[0033] Based on this, a semiconductor packaging method, a semiconductor packaging structure and a dicing film are provided, which can save process steps and avoid defects caused by water vaporization.

[0034] Please refer to FIG. 1 and FIG. 2 . According to some embodiments, the present application provides a semiconductor packaging method, including the following steps S10 and S20 .

[0035] Step S10 , providing a wafer, and attaching a dicing film 10 on the wafer.

[0036] For example, in step S10, a chip is formed on the provided wafer. When manufacturing semiconductor devices or integrated circuits, it is usually necessary to cut the wafer into small chips or grains through a dicing process. Therefore, attaching a dicing film 10 on the wafer can protect the chip on the wafer. The dicing film 10 can provide physical protection in the subsequent wafer dicing process to prevent the wafer surface from being scratched, contaminated or otherwise damaged. In addition, during the dicing process, the dicing film 10 can provide additional support to help maintain the structural stability of the wafer and prevent cracks or fractures caused by cutting stress. The dicing film 10 can also reduce the direct contact between the cutting tool and the wafer during the dicing process, thereby avoiding damage to the cutting edge or the formation of burrs, and reducing the risk of wafer surface contamination, thereby improving the quality and reliability of the final product. At the same time, after attaching the dicing film 10 on the wafer, it is beneficial to the handling and processing of the wafer, and can reduce the risk of accidental damage caused by direct contact with the wafer.

[0037] For example, in step S10, before attaching the dicing film 10 to the wafer, a step of cleaning the wafer surface is also included to remove particles, impurities or oxides on the wafer surface. Chemical cleaning agents (such as isopropyl alcohol, deionized water) can be used for cleaning, and ultrasonic cleaning or gas drying can be used.

[0038] In step S30 , the wafer with the dicing film 10 attached thereto is subjected to a dicing process, a debonding process, a baking process and a packaging process in sequence to obtain a semiconductor packaging structure.

[0039] Please understand in conjunction with Figure 2 that the dicing film 10 includes a stacked modified base film 101 and an adhesive layer 102; the water absorption rate of the adhesive layer 102 is lower than that of the blue film; the film expansion ability of the modified base film 101 after the baking process is greater than that of the blue film, and the critical temperature of the modified base film 101 undergoing irreversible plastic deformation is greater than the target threshold.

[0040] Illustratively, the target threshold is greater than 125° C. For example, the target threshold may be 150° C.

[0041] It can be understood that in step S30, the scribing process can be used to cut the wafer into individual chips, and the scribing process can be performed based on a scribing machine. The scribing process can generally include processes such as alignment calibration, parameter setting, scribing and cutting. In the alignment calibration process, the wafer can be calibrated and positioned to ensure accuracy in the subsequent scribing process, and an optical or laser alignment system can be used to assist in alignment. In the parameter setting process, a scribing machine (such as a laser scribing machine or a diamond scribing machine, etc.) is set to adjust the cutting parameters (such as cutting speed, feed speed, tool type, etc.) according to the material, thickness and design pattern of the wafer. In scribing and cutting, a cutting tool is used to cut the wafer along a pre-designed route.

[0042] For example, the dicing process may also include a detection and cleaning step, which ensures that there are no debris or defects by checking the cutting edge and the integrity of the chip, and removes particles or particles that may be generated during the dicing process by cleaning the wafer after dicing.

[0043] It can be understood that in step S30, the debonding process can be used to remove the dicing film 10 on the surface of the wafer after dicing, exposing the single dies that have been diced.

[0044] For example, a debonding method can be selected according to the type and characteristics of the dicing film 10, and the debonding methods include thermal debonding, chemical debonding or mechanical debonding. Thermal debonding is to soften the adhesive by heating so that it can be removed by physical means (such as peeling). In the thermal debonding process, the equipment is usually heated to a suitable temperature and maintained for a certain period of time to soften the adhesive in the dicing film 10 to achieve debonding. Chemical debonding is to use a specific solvent or chemical agent to dissolve the adhesive. In the chemical debonding process, the selected solvent / chemical agent is usually applied to the dicing film 10, and it is removed after it is fully infiltrated and reacted to achieve debonding. Mechanical debonding is to use a tool or mechanical means to remove the adhesive layer 102. In the mechanical debonding process, a stripping tool, a scraper, etc. are usually used to gently peel off the adhesive layer 102 to achieve debonding.

[0045] It can be understood that in step S30, the baking process may include a pre-baking process (Soft Bake) and a post-baking process (Hard Bake). In the pre-baking process, light heating is usually adopted to remove the solvent in the coating material. In the post-baking process: further heating is performed to solidify the material and enhance the mechanical strength and adhesion of the film layer. After the baking is completed, the wafer is usually left to cool to room temperature to prevent stress or deformation caused by rapid cooling.

[0046] For example, a suitable baking temperature and time can be set as needed. In some embodiments, the heating temperature range of the baking process includes 100°C-150°C. For example, the heating temperature of the baking process is 100°C, 110°C, 120°C, 130°C, 140°C or 150°C, etc. It can be understood that since the film expansion ability of the modified base film 101 after the baking process is greater than that of the blue film, and the critical temperature of the irreversible plastic deformation of the modified base film 101 is greater than the target threshold, the scribe film 10 including the modified base film 101 can increase the high temperature resistance while ensuring that the film expansion ability of the base film remains unchanged. At a baking temperature of 150°C, the scribe film 10 will not undergo irreversible plastic deformation, and the size change is small, so as to achieve repeated baking.

[0047] In some embodiments, the heating time of the baking process is greater than or equal to 10 hours. For example, the heating time of the baking process is 10 hours, 11 hours, 12 hours, 13 hours or 14 hours, etc. In some embodiments, the modified base film 101 does not produce volatile substances when performing the baking process. In a specific embodiment, since the water absorption rate of the glue layer 102 is lower than that of the blue film, the modified base film 101 does not produce volatile substances when performing the baking process. When undergoing a long-term baking process of 12 hours at a temperature above 125°C, the modified base film 101 will not produce total volatile organic compounds (Total Volatile Organic Compounds). These compounds refer to organic substances that can volatilize at room temperature, and their presence may affect the performance of semiconductor materials and the cleanliness of the manufacturing process. Controlling and detecting the level of total volatile organic compounds is very important for ensuring the quality and reliability of semiconductor devices. Therefore, performing a baking process on the wafer after attaching the dicing film 10 can ensure the adequacy and safety of the baking process.

[0048] It can be understood that in step S30, the packaging process is usually used in semiconductor manufacturing to isolate the chip from the external environment and connect it to the circuit, aiming to protect the chip and improve its reliability, operability and electrical connection performance. The packaging process usually includes but is not limited to bare chip preparation, substrate bonding, welding or lead frame connection, hot pressing welding (WireBonding), flip chip (Flip Chip), packaging material filling, curing treatment, cutting and trimming, electrical testing, marking packaging and other processes. In the bare chip preparation process, the chip that has been diced is cleaned and verified to ensure that it is defect-free and meets the packaging requirements. In the substrate bonding process, the chip is fixed to the packaging substrate through a bonding process. Thermally conductive adhesives are usually used to ensure good thermal management. In the welding or lead frame connection process, the chip contacts are welded to the connection pins of the packaging substrate through metal solder balls or lead frames. It can be completed by hot pressing welding or flip chip method. Hot pressing welding is to use ultrasound or hot pressing to weld gold wires or aluminum wires to ensure electrical contact. Flip chip is to directly flip the chip and solder it to the substrate, usually using solder for connection, which helps to improve conductivity and reduce the package volume. In the packaging material filling, packaging materials (such as epoxy resin, glue, etc.) are usually used to fill between the chip and the packaging substrate to form a protective layer to prevent environmental influences (such as moisture, dust, etc.). In the curing process, the coated packaging material is cured, usually by heating or ultraviolet irradiation, so that the material hardens and ensures its physical and chemical properties. In cutting and trimming, the completed package body is cut into individual packaging units, and the edges are trimmed if necessary to improve the appearance and meet the needs of subsequent processing. In the electrical testing process, the packaged chip is electrically tested to ensure that its performance meets the specifications. The test may include functional testing, short circuit and open circuit testing, etc. After the packaging is completed, it can also include marking and packaging processes, that is, marking each packaging unit (such as model, batch number, etc.), and then final packaging for easy transportation and storage.

[0049] In the semiconductor packaging method of the above embodiment, the dicing film 10 includes a stacked modified base film 101 and a glue layer 102. Since the water absorption rate of the glue layer 102 is lower than that of the blue film, defects caused by water vaporization can be avoided, thereby reducing the risk of material damage and improving product yield. In addition, since the film expansion capacity of the modified base film 101 after the baking process is greater than that of the blue film, and the critical temperature of the modified base film 101 undergoing irreversible plastic deformation is greater than the target threshold, the sorting and transfer process can be effectively saved, so that only by sequentially performing the dicing process, the debonding process, the baking process and the packaging process on the wafer after the dicing film 10 is attached, the semiconductor packaging structure can be obtained, which is conducive to simplifying the process and shortening the process cycle time. And improve the degree of automation of the packaging process. In this way, the process can be simplified, the introduction of jigs and materials can be reduced, thereby effectively reducing the use of equipment, operation risks and production costs. Compared with the sorting and transfer method, the above-mentioned semiconductor packaging method does not involve the customization of jigs, has strong universality and low difficulty in implementation.

[0050] In the above embodiments of the present disclosure, unless otherwise specified herein, the execution of each step in the method is not strictly limited in order, and these steps may not necessarily be executed in the order described, and may be executed in other ways. Moreover, at least a part of any step may include multiple sub-steps or multiple stages, and these sub-steps or stages are not necessarily executed at the same time, but may be executed at different times, and the execution order of these sub-steps or stages is not necessarily sequential, but may be executed in turn or alternately with other steps or at least a part of the sub-steps or stages of other steps.

[0051] In some embodiments, step S10, attaching a dicing film 10 on a wafer, includes the following steps S11 and S12.

[0052] Step S11, providing a dicing film 10, wherein the dicing film 10 includes a modified base film 101, a glue layer 102 and a release film 103 which are stacked;

[0053] Step S12, peeling off the release film 103, and attaching the adhesive layer 102 to the wafer.

[0054] It can be understood that in step S11, the modified base film 101 is usually made of a polymer material, has excellent mechanical strength and heat resistance, and can withstand temperature changes and forces in subsequent processing. The physical properties of the base film need to match the specific application requirements to ensure successful scribing and subsequent processing. The adhesive layer 102 has high adhesion to ensure that the scribing film 10 can fit tightly to the wafer surface during the scribing process. The selection of the adhesive layer 102 is usually based on the characteristics of the material to be processed, and it must have good solvent resistance and thermal stability to ensure that its adhesion is maintained during scribing and silicon wafer cutting.

[0055] In step S12, the release film 103 is peeled off after the dicing film 10 is attached, in order to protect the integrity of the adhesive layer 102 during the bonding and cutting process. It can be understood that by selecting a suitable release film 103, it helps to reduce the adhesion, thereby reducing the risk of tearing or adhesive residue on the wafer surface. When peeling off the release film 103, it is necessary to maintain a steady and uniform stretch to avoid tearing or damage to the adhesive layer 102. The speed and angle of peeling also need to be controlled to reduce the generation of bubbles and wrinkles, and ensure that the adhesive layer 102 is fully adhered to the wafer.

[0056] In some embodiments, the material of the modified base film 101 includes modified polyolefins. The modified base film 101 made of modified polyolefins has excellent mechanical properties. Since the modified polyolefins have high tensile strength and toughness, they can effectively withstand the physical pressure generated during cutting and processing, reducing the risk of base film rupture. In addition, the modified base film 101 made of modified polyolefins has good heat resistance, and its good thermal stability makes it suitable for high-temperature processing, which can ensure the stability of the base film under different process conditions. By increasing the high temperature resistance of the dicing film 10, it can be baked at a baking temperature of 150°C without irreversible plastic deformation, and the size change is small, so as to achieve repeated baking. At the same time, the modified base film 101 made of modified polyolefins has good plasticity and formability, and the modified polyolefins can be adjusted as needed to adapt to wafers of different sizes and shapes, providing better adaptability. Since the modified base film 101 made of modified polyolefin material has low rust embedding and pinhole properties, the lower surface energy of the modified polyolefin material helps to achieve more uniform coating, thereby effectively preventing bubble formation and ensuring better adhesion.

[0057] In some embodiments, the material of the adhesive layer 102 includes polyacrylates. The adhesive layer 102 made of polyacrylates has excellent adhesion. Polyacrylate materials show excellent adhesion on a variety of surfaces, which can ensure that the adhesive layer 102 is firmly attached to the wafer surface and avoid dicing defects caused by poor adhesion. In addition, the adhesive layer 102 made of polyacrylates has excellent solvent resistance and is suitable for various chemical solvent environments. It can maintain stable adhesion during dicing and subsequent cleaning. At the same time, the viscosity of the adhesive layer 102 made of polyacrylates is adjustable. The formula of polyacrylates can adjust its viscosity according to specific needs to meet the requirements of different processes, and also control its peeling performance. The adhesive layer 102 made of polyacrylates can be suitable for line adhesion of various materials, especially to cope with the different physical and chemical properties of the target materials.

[0058] In some embodiments, the material of the release film 103 includes polyethylene terephthalate. The release film 103 made of polyethylene terephthalate has good peeling performance. Polyethylene terephthalate has excellent peeling properties, which helps to avoid adhesion of the adhesive layer 102 during the peeling process and ensure the smooth progress of the dicing process. In addition, the release film 103 made of polyethylene terephthalate has excellent transparency. The good transparency enables the operator to clearly observe the bonding effect between the adhesive layer 102 and the wafer, which is convenient for quality control. At the same time, the release film 103 made of polyethylene terephthalate has excellent chemical resistance and moisture resistance. During the processing, polyethylene terephthalate has good tolerance to most chemical solvents and moisture, which can prevent the degradation of the material in a high humidity environment. The release film 103 made of polyethylene terephthalate has a stable structure. Under different temperature and humidity conditions, polyethylene terephthalate can maintain good dimensional stability to ensure the working ability of the dicing film 10 .

[0059] Alternatively, in some other embodiments, step S10, attaching a dicing film 10 on the wafer, includes the following steps S13 and S14.

[0060] Step S13, forming an initial base film and a glue layer 102 on the wafer;

[0061] Step S14 , treating the initial base film with a polarization cross-linking modification process to form a modified base film 101 .

[0062] For example, in step S13 , the material of the base film includes polyolefins.

[0063] For example, in step S14, a suitable cross-linking agent may be selected to implement a polarization cross-linking modification process, for example, the cross-linking agent may be an organic peroxide, an epoxy compound, etc.

[0064] In some embodiments, step S14 may include the steps of treating the initial base film with a polarization process, and then treating the initial base film with a cross-linking process to obtain a modified base film 101. In a specific embodiment, before the cross-linking process, the initial base film may be polarized by a physical or chemical method. For example, the initial base film may be treated with a surface modification process or a functionalization process. Surface modification may improve the polarity of the film by methods such as plasma treatment, gas treatment or chemical coating. In the functionalization process, the wettability and compatibility of the base film with water, solvents, etc. are increased by introducing polar groups (such as hydroxyl groups, amino groups, etc.). In the cross-linking process, the initial base film is first mixed with a cross-linking agent, and a cross-linking reaction is carried out under heating or under appropriate catalyst conditions. This process results in cross-linking between polymer chains, thereby forming a three-dimensional network structure.

[0065] For example, after the initial base film is treated by a polarized cross-linking modification process to form a modified base film 101, cooling and curing, post-processing, testing and evaluation and other processes may also be included. After the cross-linking is completed, the dicing film 10 is gradually cooled to control the degree of cross-linking and maintain the stability of the film. Post-processing can be achieved by cleaning to remove unreacted cross-linking agents and surface residues to ensure the surface quality of the dicing film 10. After post-processing, the physical and chemical properties of the modified base film 101, such as adhesion, mechanical properties and chemical resistance, can be evaluated using methods such as microscopy, spectral analysis and mechanical testing.

[0066] In the above embodiment, the initial base film is treated by a polarized cross-linking modification process to form a modified base film 101, which can enhance the adhesion of the dicing film 10. Polarized cross-linking increases the surface energy of the base film, making it more suitable for bonding with the glue layer 102 and the wafer to significantly improve the adhesion performance. The cross-linked structure also gives the material higher mechanical strength and durability, reduces damage and fracture that may occur during cutting and processing, thereby improving the mechanical properties of the dicing film 10. In addition, the modified base film 101 has chemical resistance, environmental resistance, optimized thermal stability and excellent insulation. The modified base film has enhanced resistance to a variety of chemicals, solvents and humidity, and is suitable for a wider range of process conditions. The cross-linking process enhances the thermal stability of the dicing film 10, so that it can maintain performance and work stably during high-temperature processing. The modified base film provides excellent electrical insulation performance in electronic and semiconductor packaging, which helps to improve the reliability of the device. Since the durability and stability of the dicing film 10 are improved, it helps to reduce the environmental impact that may be caused during production and use. In this way, the performance of the base film can be effectively improved through the polarization cross-linking modification process, thereby providing a better and more reliable solution for semiconductor manufacturing, packaging and other applications.

[0067] In some embodiments, the wafer with the dicing film 10 attached thereto is subjected to a debonding process, including: curing the adhesive layer 102 with ultraviolet light; wherein the adhesive peeling force of the adhesive layer 102 after curing is less than 1000 mN / 20 mm. For example, the adhesive peeling force of the adhesive layer 102 after curing is 950 mN / 20 mm, 900 mN / 20 mm, or 850 mN / 20 mm.

[0068] It can be understood that the principle of using UV light to cure the adhesive layer 102 is that the photoinitiator (or photosensitizer) in the curing material absorbs ultraviolet light under ultraviolet light to generate active free radicals or cations, which trigger monomer polymerization, cross-linking and branching chemical reactions, so that the adhesive is converted from liquid to solid within a few seconds. After the viscosity of the adhesive layer 102 decreases, there is no change in adhesion and no residual glue. After curing, the cross-linking reaction of the adhesive layer 102 occurs completely. After subsequent high-temperature baking, the dicing film 10 will not produce small molecules that volatilize to cause the adhesive layer 102 to delaminate, and no residual glue is generated.

[0069] In some embodiments, in step S20, a dicing process is performed on the wafer to which the dicing film 10 is attached, including:

[0070] Step S21, dicing the wafer to obtain a plurality of semiconductor devices distributed at intervals. For example, the semiconductor devices may be chips.

[0071] In some embodiments, in step S20, a packaging process is performed on the wafer after the dicing film 10 is attached, including:

[0072] Step S22, performing flip-chip packaging on the semiconductor device, and peeling off the dicing film 10. Since the dicing film 10 in the above embodiment is used, no residual glue and residual silicon slag will be generated when peeling off the dicing film 10. In addition, when the semiconductor device is flip-chip packaged, no ejector pin mark will be generated on the back of the semiconductor device to ensure that the dicing film 10 is not broken, thereby avoiding vacuum leakage.

[0073] According to some embodiments, the present application further provides a semiconductor packaging structure, which is prepared by the semiconductor packaging method in any of the above embodiments. Since the semiconductor packaging structure is prepared by the semiconductor packaging method in any of the above embodiments, the semiconductor packaging structure in this embodiment also has the beneficial effects of the above semiconductor packaging method, which will not be repeated here.

[0074] Please refer to Figure 2. According to some embodiments, the present application also provides a scriber film 10, which includes a modified base film 101, an adhesive layer 102 and a release film 103 stacked in sequence from bottom to top; wherein the water absorption rate of the adhesive layer 102 is lower than that of the blue film; the film expansion ability of the modified base film 101 after performing the baking process is greater than that of the blue film, and the critical temperature of the modified base film 101 undergoing irreversible plastic deformation is greater than the target threshold.

[0075] In the scribe film 10 of the above embodiment, the scribe film 10 includes a stacked modified base film 101 and a glue layer 102. Since the water absorption rate of the glue layer 102 is lower than that of the blue film, defects caused by water vaporization can be avoided, thereby reducing the risk of material damage and improving product yield. In addition, since the film expansion capacity of the modified base film 101 after the baking process is greater than that of the blue film, and the critical temperature of the modified base film 101 undergoing irreversible plastic deformation is greater than the target threshold, the sorting and transfer process can be effectively saved, so that only by sequentially performing the scribe process, the debonding process, the baking process and the packaging process on the wafer after the scribe film 10 is attached, the semiconductor packaging structure can be obtained, which is conducive to simplifying the process and shortening the process cycle time. And improve the degree of automation of the packaging process. In this way, the process can be simplified, the introduction of jigs and materials can be reduced, thereby effectively reducing the use of equipment, operation risks and production costs. Compared with the sorting and transfer method, the above-mentioned semiconductor packaging method does not involve the customization of jigs, has strong universality and low difficulty in implementation.

[0076] In some embodiments, the adhesive peel force of the adhesive layer 102 after curing is less than 1000 mN / 20 mm.

[0077] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0078] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A semiconductor packaging method, characterized in that: include: Providing a wafer, and attaching a dicing film on the wafer; The wafer with the dicing film attached thereto is subjected to a dicing process, a debonding process, a baking process and a packaging process in sequence to obtain a semiconductor packaging structure; Wherein, the scribe film comprises a laminated modified base film and a glue layer; the water absorption rate of the glue layer is lower than that of the blue film; The film expansion capability of the modified base film after the baking process is performed is greater than that of the blue film, and the critical temperature at which the modified base film undergoes irreversible plastic deformation is greater than a target threshold.

2. The semiconductor packaging method according to claim 1, wherein: The heating temperature range of the baking process includes 100° C.-150° C.; and / or The heating time of the baking process is greater than or equal to 10 hours.

3. The semiconductor packaging method according to claim 1, wherein: The modified base film generates no volatile substances when the baking process is performed.

4. The semiconductor packaging method according to claim 1, wherein: The step of attaching a dicing film to the wafer comprises: Providing a dicing film, wherein the dicing film comprises the modified base film, the adhesive layer and a release film which are stacked; peeling off the release film, and attaching the adhesive layer to the wafer; Alternatively, an initial base film and the adhesive layer are stacked on the wafer; and the initial base film is treated with a polarization cross-linking modification process to form the modified base film.

5. The semiconductor packaging method according to claim 1, wherein: The debonding process is performed on the wafer after the dicing film is attached, including: The adhesive layer is cured by ultraviolet light; wherein the adhesive peeling force of the adhesive layer after curing is less than 1000mN / 20mm.

6. The semiconductor packaging method according to any one of claims 1 to 5, characterized in that: The dicing process is performed on the wafer to which the dicing film is attached, including: dicing the wafer to obtain a plurality of semiconductor devices distributed at intervals; The packaging process is performed on the wafer with the dicing film attached thereto, including: flip-chip packaging of the semiconductor device and peeling off the dicing film.

7. A semiconductor packaging structure, characterized in that: The semiconductor packaging method is prepared by any one of claims 1 to 6.

8. A scribing film, characterized in that: include: A modified base film, an adhesive layer and a release film are stacked in sequence from bottom to top; Wherein, the water absorption rate of the adhesive layer is lower than that of the blue film; The film expansion capability of the modified base film after the baking process is performed is greater than that of the blue film, and the critical temperature of the modified base film undergoing irreversible plastic deformation is greater than a target threshold.

9. The dicing film according to claim 8, characterized in that: The adhesive peeling force of the adhesive layer after curing is less than 1000mN / 20mm.

10. The scribe film according to claim 8 or 9, characterized in that: The material of the modified base film includes modified polyolefins; The material of the adhesive layer includes polyacrylate; and / or The material of the release film includes polyethylene terephthalate.

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