Silicon wafer thermal annealing treatment equipment

Abstract

The invention discloses silicon wafer thermal annealing treatment equipment, and relates to the technical field of wafer annealing. The silicon wafer thermal annealing treatment equipment comprises a thermal annealing treatment device, the edge of a silicon wafer is slightly contacted and fixed by arranging a plurality of ceramic cambered surface reinforcing blocks, so that the silicon wafer is kept stable in the rotating process and the thermal annealing treatment process, the silicon wafer is effectively prevented from deviating in the thermal annealing treatment or rotating process, and the service life of the silicon wafer is prolonged. Therefore, the overall stability is improved, potential damage or deviation caused by vibration of the silicon wafer is reduced, it is ensured that the silicon wafer is evenly heated in the thermal annealing process, by providing stable fixing force, thermal stress generated in the thermal treatment process of the silicon wafer is reduced, the deformation risk is reduced, and the service life of the silicon wafer is prolonged. Compared with the prior art, the integrity of the silicon wafer in the optical test or related application is ensured, the reduction of the optical performance of the silicon wafer caused by movement is avoided, and compared with the prior art, the integrity of the silicon wafer in the optical test or related application is improved.

Description

Technical Field

[0001] The invention relates to the technical field of wafer annealing, in particular to a silicon wafer thermal annealing treatment device. Background Art

[0002] Silicon wafers are the basic material in semiconductor manufacturing and are usually made of high-purity single-crystal silicon. Silicon wafers are smooth and flat, and are the carriers of electronic components such as integrated circuits and optoelectronic devices. Thermal annealing devices are equipment used to heat and cool silicon wafers, aiming to improve the physical and electrical properties of silicon wafers. By heating, defects generated in the previous processing process can be eliminated and the crystal structure can be optimized. Subsequent heating of doped silicon can activate the conductivity of doped atoms and improve wafer performance. The application of thermal annealing devices can ensure that the physical and electrical properties of the final product meet the specified standards and enhance the stability and reliability of the product.

[0003] According to the Chinese utility model patent with patent number CN220439561U, a semiconductor wafer continuous annealing treatment device is disclosed. In this device, a support ring is fixed to the outer wall of the annealing box, and the support ring is used to provide support for the rotating ring. The rotating ring is rotatably installed on the inner side of the support ring. A positioning box is installed on the inner side of the rotating ring. The positioning box is used for placing wafers. The pop-up mechanism distributed on the rotating ring and the positioning box is used to automatically open the positioning box; the pop-up mechanism includes a limit unit and a reset unit; the limit unit is used to limit the positioning box and the rotating ring and automatically release the limit. The utility model sets a pop-up mechanism, so that when the rotating ring drives the positioning box to move to the highest point, the stop block contacts the limit block, releases the limit on the positioning box, and makes the positioning box automatically pop up under the action of the second spring, without manual operation, avoiding missing the annealed wafer, and further improving work efficiency.

[0004] Although the above-mentioned silicon wafer thermal annealing equipment has certain advantages in installation, disassembly and material collection, it still has certain disadvantages:

[0005] 1. During the thermal annealing process of silicon wafers, the thermal annealing equipment has poor fixing effect when performing thermal annealing on multiple silicon wafers simultaneously, resulting in positional displacement of the silicon wafers during the heating process, resulting in uneven heat distribution, affecting the annealing effect. The deviation causes the temperature in some areas to be too high and the temperature in other areas to be insufficient, causing local overheating or cooling of the silicon wafer, thereby causing structural damage, resulting in differences in electrical performance after treatment, and reducing the consistency and reliability of the product.

[0006] 2. During the thermal annealing process of silicon wafers, during the process of taking or transporting multiple silicon wafers, dust and particulate matter in the air may adhere to the surface of the silicon wafer, causing scratches or other physical damage, affecting subsequent processing. Dust may cause surface defects, leading to carrier traps, and reducing electrical properties, such as increasing leakage current or reducing breakdown voltage, causing contamination or chemical corrosion, affecting the cleanliness and performance of the wafer. Summary of the invention

[0007] In view of the disadvantage of the prior art that the thermal annealing treatment of multiple silicon wafers has poor stability effect resulting in uneven thermal annealing treatment, the present invention provides a silicon wafer thermal annealing treatment device to solve the problem of position offset during the thermal annealing treatment of multiple silicon wafers.

[0008] In order to achieve the purpose of keeping the positions of multiple silicon wafers stable during thermal annealing and performing thermal annealing of multiple silicon wafers simultaneously, the present invention is implemented through the following technical scheme: a silicon wafer thermal annealing device, comprising a thermal annealing device, a sealing cover plate is installed on the top surface of the thermal annealing device, two automatic inspection components are installed on the top surface of the thermal annealing device, a rotating replacement component is installed inside the thermal annealing device, a silicon wafer placement aluminum plate is evenly and movably installed on the inner surface of the rotating replacement component, silicon wafer limit blocks are evenly installed on the top surface of the silicon wafer placement aluminum plate, and the rotating replacement component is installed on the inner surface of the rotating replacement component. The inner surface of the replacement component is evenly installed with a supporting bottom block, the top surfaces of several of the supporting bottom blocks are installed with inclined plugs, several of the inclined plugs are provided with a first inclined surface, several of the silicon wafer limit blocks are provided with an active cavity inside, several of the inner walls of the active cavity are evenly installed with extrusion springs, several of the extrusion springs are installed on the inner wall of the active cavity, several of the extrusion springs are commonly installed with extrusion blocks on their outer surfaces, several of the extrusion blocks are provided with a second inclined surface, a ceramic arc reinforcement block is installed on one end surface of the extrusion block, and the thermal annealing treatment device is installed with a push-to-move replacement component.

[0009] Furthermore, the outer surface of the first inclined surface is in active contact with the outer surface of the second inclined surface, and the outer surface of the ceramic arc surface reinforcement block and the outer surface of the extrusion block are both in active contact with the inner wall of the active cavity.

[0010] Furthermore, the rotation replacement component includes a second motor and a lifting chamber, two lifting chambers are opened inside the thermal annealing treatment device, a second motor is installed inside the thermal annealing treatment device, a rotating shaft is installed on the outer surface of the output end of the second motor, and one end surface of the rotating shaft is in active contact with the inside of the thermal annealing treatment device.

[0011] Furthermore, a thermal annealing turntable is installed on the outer surface of the rotating shaft, and turntable cavities are evenly opened inside the thermal annealing turntable. The inner surfaces of several turntable cavities are fixedly connected to one end surface of the supporting bottom block.

[0012] Furthermore, the pushing and moving replacement assembly includes a hydraulic press and an aluminum top block. The hydraulic press is installed inside the thermal annealing treatment device, and the aluminum top block is installed on the outer surface of the output end of the hydraulic press.

[0013] Furthermore, a top block cavity is provided on the bottom surface of the aluminum plate where the plurality of silicon wafers are placed, and the inner wall of the top block cavity is in active contact with the outer surface of the aluminum top block.

[0014] Furthermore, the interior of the aluminum top block is evenly provided with bullet cavities, a rotating column is movably installed on the inner wall of the bullet cavity, and an extrusion plate is installed on the outer surface of the rotating column.

[0015] Furthermore, connecting springs are installed on the inner walls of several of the bullet cavities, and one end surfaces of several of the connecting springs are fixedly connected to the outer surface of the extrusion plate. Pressure plate grooves are evenly opened inside the aluminum top block, and the inner walls of the pressure plate grooves are in active contact with the outer surface of the extrusion plate.

[0016] Furthermore, the automatic inspection component includes a first motor and a ball screw, the first motor is installed on the top surface of the thermal annealing device, the ball screw is installed on the outer surface of the output end of the first motor, and a limiting slide rail is installed on the top surface of the thermal annealing device.

[0017] Furthermore, a screw slider is movably mounted on the outer surface of the ball screw, and the outer surface of the screw slider is in movably contact with the outer surface of the limiting slide rail. A plug post is mounted on the outer surface of the screw slider, and two slots are provided inside the aluminum plate where the silicon wafer is placed, and the outer surface of the plug post is in movably contact with the inner wall of the slot.

[0018] The present invention has the following beneficial effects:

[0019] 1. The silicon wafer thermal annealing treatment equipment, by setting a plurality of ceramic arc-surface reinforcement blocks to slightly contact and fix the edge of the silicon wafer, achieves the stability of the silicon wafer during rotation and thermal annealing treatment, effectively prevents the silicon wafer from shifting during thermal annealing treatment or rotation, thereby improving the overall stability, reducing potential damage or shift of the silicon wafer due to vibration, ensuring that the silicon wafer is heated evenly during the thermal annealing process, and reducing the thermal stress generated by the silicon wafer during the heat treatment process by providing a stable fixing force, reducing the risk of deformation, ensuring that the silicon wafer maintains integrity in optical testing or related applications, avoiding the degradation of the optical performance of the silicon wafer due to movement, and improving the integrity of the silicon wafer in optical testing or related applications compared with the prior art.

[0020] 2. The silicon wafer thermal annealing treatment equipment performs thermal annealing treatment on several stably fixed silicon wafers, and can simultaneously process multiple silicon wafers in one thermal annealing, thereby significantly improving production efficiency, reducing single processing time, shortening the conversion time and downtime of the thermal annealing treatment device, and improving overall production efficiency. Stably fixed silicon wafers can ensure that each wafer maintains the same heating conditions during the thermal annealing process, avoid local temperature differences, ensure the consistency and repeatability of the treatment, and consistent thermal treatment conditions help to improve the yield of the final product. Stable fixation can reduce displacement and deformation during the thermal treatment process, and reduce the risk of silicon wafer cracking or failure due to thermal stress, thereby ensuring the properties and structural integrity of the silicon wafer.

[0021] 3. The silicon wafer thermal annealing treatment equipment operates in a closed environment without manual operation, thereby reducing the probability of contamination of the silicon wafer after thermal annealing treatment. Automated operation helps to ensure that each silicon wafer is processed under satisfactory conditions before detection, further reducing the risk of contamination. Operation in a closed environment can effectively prevent the influence of external dust, chemicals and other pollution sources on the silicon wafer. The closed environment can provide controllable atmosphere conditions such as gas composition and humidity, etc., to prevent pollutants produced by chemical reactions from interfering with the wafer, and help maintain the consistency of detection conditions, thereby improving the accuracy and reliability of the detection results, preventing the detection from being affected by contamination, and more accurately reflecting the true state of the silicon wafer, which is helpful for subsequent quality control.

[0022] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the overall structure of the present invention;

[0024] Figure 2 This is a schematic diagram of the internal structure of the thermal annealing treatment device of the present invention;

[0025] Figure 3This is a schematic diagram of the overall structure of the push-pull mobile replacement assembly of the present invention;

[0026] Figure 4 This is a schematic diagram of the internal structure of the push-to-move replacement assembly of the present invention;

[0027] Figure 5 This is a schematic diagram of the internal structure of the aluminum top block of the present invention;

[0028] Figure 6 This is a schematic diagram of the overall structure of the rotary replacement assembly of the present invention;

[0029] Figure 7 This is a schematic diagram of the external structure of the aluminum plate for placing the silicon wafer of the present invention;

[0030] Figure 8 This is a schematic diagram of the internal structure of the silicon wafer limit block of the present invention;

[0031] Fig. 9 Schematic diagram of the overall structure of the automatic inspection component of the present invention.

[0032] In the figure: 1. thermal annealing treatment device; 2. turntable cavity; 3. sealing cover plate; 4. first motor; 5. ball screw; 6. screw slider; 7. limit slide rail; 8. plug column; 9. lifting cavity; 10. connecting spring; 11. second motor; 12. rotating shaft; 13. thermal annealing turntable; 14. aluminum plate for placing silicon wafer; 15. slot; 16. supporting bottom block; 17. tilting plug block; 18. first inclined surface; 19. silicon wafer limit block; 20. movable cavity; 21. extrusion spring; 22. extrusion block; 23. second inclined surface; 24. ceramic arc surface reinforcement block; 25. hydraulic press; 26. aluminum top block; 27. top block cavity; 28. spring cavity; 29. ​​rotating column; 30. extrusion plate; 31. pressure plate groove. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0034] In the description of the present invention, it should be understood that the terms "opening", "upper", "lower", "thickness", "top", "middle", "length", "inside", "all around" and the like indicating orientation or positional relationship are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the components or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0035] See also Figure 1-Figure 9 The embodiment of the present invention provides a technical solution: a silicon wafer thermal annealing treatment device, comprising a thermal annealing treatment device 1, a sealing cover plate 3 is installed on the top surface of the thermal annealing treatment device 1, two automatic inspection components are installed on the top surface of the thermal annealing treatment device 1, a rotating replacement component is installed inside the thermal annealing treatment device 1, a silicon wafer placement aluminum plate 14 is evenly and movably installed on the inner surface of the rotating replacement component, a silicon wafer placement aluminum plate 14 is evenly distributed on the top surface of the silicon wafer placement aluminum plate 14, a supporting bottom block 16 is evenly installed on the inner surface of the rotating replacement component, and the top surfaces of the plurality of supporting bottom blocks 16 are arranged A tilted plug block 17 is installed, and a plurality of tilted plug blocks 17 are provided with a first tilted surface 18, and a plurality of silicon wafer limit blocks 19 are provided with an active cavity 20 inside, and a plurality of active cavities 20 are uniformly provided with extrusion springs 21 on the inner wall, and a plurality of extrusion springs 21 are installed on the inner wall of the active cavity 20, and an extrusion block 22 is commonly installed on the outer surface of the plurality of extrusion springs 21, and a plurality of extrusion blocks 22 are provided with a second tilted surface 23, and a ceramic arc surface reinforcement block 24 is installed on one end surface of the extrusion block 22, and the thermal annealing treatment device 1 is provided with a push-movement replacement component, and the outer surface of the first tilted surface 18 is connected to the outer surface of the first tilted surface 18. The outer surface of the second inclined surface 23 is in active contact, and the outer surface of the ceramic arc surface reinforcement block 24 and the outer surface of the extrusion block 22 are both in active contact with the inner wall of the active cavity 20. The inclined plug block 17 is inserted into the aluminum plate 14 for placing the silicon wafer. The first inclined surface 18 of the inclined plug block 17 slightly squeezes the second inclined surface 23 of the extrusion block 22, so that the extrusion block 22 drives the extrusion spring 21 and the ceramic arc surface reinforcement block 24 to move a small distance toward the edge of the silicon wafer, so that several ceramic arc surface reinforcement blocks 24 automatically slightly contact and fix the edge of the silicon wafer, so that the silicon wafer is kept during the rotation process and thermal annealing treatment. Stable, effectively preventing the silicon wafer from shifting during thermal annealing or rotation, thereby improving the overall stability and reducing potential damage or shifting of the silicon wafer due to vibration. The ceramic material of the ceramic arc reinforcement block 24 has good thermal conductivity, and slight contact can enhance heat conduction, ensuring that the silicon wafer is heated evenly during thermal annealing, avoiding local overheating or uneven cooling, and reducing the thermal stress generated by the silicon wafer during heat treatment by providing a stable fixing force, reducing the risk of deformation, ensuring that the silicon wafer maintains its integrity during optical testing or related applications, and avoiding the degradation of the optical performance of the silicon wafer due to movement.

[0036] The rotating replacement component includes a second motor 11 and a lifting chamber 9. Two lifting chambers 9 are provided inside the thermal annealing treatment device 1. The second motor 11 is installed inside the thermal annealing treatment device 1. A rotating shaft 12 is installed on the outer surface of the output end of the second motor 11. One end surface of the rotating shaft 12 is in active contact with the inside of the thermal annealing treatment device 1. A thermal annealing turntable 13 is installed on the outer surface of the rotating shaft 12. Turntable chambers 2 are evenly provided inside the thermal annealing turntable 13. The inner surfaces of several turntable chambers 2 are fixedly connected to one end surface of the supporting bottom block 16. When the thermal annealing treatment of multiple silicon wafers is completed, the above operation is repeated in reverse, and the silicon wafers after the thermal annealing treatment are slowly sent for inspection in batches. The silicon wafers after the thermal annealing treatment are automatically sent for inspection, and in a closed The environment does not require manual operation, which reduces the probability of contamination of silicon wafers after thermal annealing. Pollution that may be introduced during manual operation, such as dust and grease on the hands, can be introduced by automated operation. It helps to ensure that each silicon wafer is handled under full conditions before testing, further reducing the risk of contamination. Operation in a closed environment can effectively prevent the influence of external dust, chemicals and other pollution sources on silicon wafers. The closed environment can provide controllable atmosphere conditions such as gas composition and humidity, etc., to prevent pollutants produced by chemical reactions from interfering with the wafers, which helps to maintain the consistency of testing conditions, thereby improving the accuracy and reliability of test results, preventing pollution from affecting the test, and more accurately reflecting the true state of the silicon wafer, which is helpful for subsequent quality control.

[0037] The push-and-move replacement assembly includes a hydraulic press 25 and an aluminum top block 26. The hydraulic press 25 is installed inside the thermal annealing treatment device 1. The aluminum top block 26 is installed on the outer surface of the output end of the hydraulic press 25. The bottom surface of the aluminum plate 14 on which the silicon wafers are placed is provided with a top block cavity 27. The inner wall of the top block cavity 27 is in active contact with the outer surface of the aluminum top block 26. The inside of the aluminum top block 26 is evenly provided with a spring cavity 28. A rotating column 29 is movably installed on the inner wall of the spring cavity 28. An extrusion plate 30 is installed on the outer surface of the rotating column 29. A connecting spring 10 is installed on the inner wall of the plurality of spring cavities 28. The plurality of connecting springs 10 One end surface is fixedly connected to the outer surface of the extrusion plate 30, and the interior of the aluminum top block 26 is evenly provided with a pressure plate groove 31. The inner wall of the pressure plate groove 31 is in active contact with the outer surface of the extrusion plate 30. The automatic inspection component includes a first motor 4 and a ball screw 5. The first motor 4 is mounted on the top surface of the thermal annealing device 1, and the ball screw 5 is mounted on the outer surface of the output end of the first motor 4. A limiting slide rail 7 is installed on the top surface of the thermal annealing device 1. A screw slider 6 is movably mounted on the outer surface of the ball screw 5. The outer surface of the screw slider 6 is in active contact with the outer surface of the limiting slide rail 7. The outer surface is provided with a plug 8, and the interior of the aluminum plate 14 for placing the silicon wafer is provided with two slots 15. The outer surface of the plug 8 is in active contact with the inner wall of the slot 15. By controlling the second motor 11 to work, the second motor 11 drives the rotating shaft 12 to rotate, and the rotating shaft 12 drives the thermal annealing turntable 13 to rotate, and the next turntable cavity 2 to be installed is replaced, so that several stably fixed silicon wafers are subjected to thermal annealing treatment. Multiple silicon wafers can be processed simultaneously in one thermal annealing, thereby significantly improving production efficiency, reducing single processing time, and shortening conversion time and downtime of the thermal annealing treatment device 1. The stable and fixed silicon wafers can ensure that each wafer maintains the same heating conditions during the thermal annealing process, avoid local temperature differences, and ensure the consistency and repeatability of the treatment. The consistent heat treatment conditions help to improve the yield of the final product and reduce waste caused by improper treatment. Stable fixation can reduce displacement and deformation during the heat treatment process, and reduce the risk of silicon wafer cracking or failure due to thermal stress, thereby ensuring the properties and structural integrity of the silicon wafer. Concentrated processing of multiple silicon wafers can make it easier to control key parameters such as thermal annealing temperature, time and atmosphere, thereby optimizing the treatment effect.

[0038] The working principle and use process of the present invention are as follows: when the silicon wafer needs to be thermally annealed, it is placed on the silicon wafer placement aluminum plate 14 through a mechanical arm, and the controller controls the first motor 4 to work. The first motor 4 drives the ball screw 5 to rotate, and the ball screw 5 cooperates with the screw slider 6, and the outer surface of the screw slider 6 interacts with the outer surface of the limit slide 7. The limit slide 7 stably limits the moving direction of the screw slider 6, so that the screw slider 6 stably drives the plug 8 to move. The inside of the plug 8 is installed with magnetic material, and the inside of the slot 15 contains iron elements. The plug 8 slowly drives the silicon wafer placement aluminum plate 14 to move to the top of the lifting chamber 9 through the friction and magnetic attraction between the plug 8 and the slot 15. By controlling The device controls the hydraulic press 25 to move, so that the hydraulic press 25 drives the aluminum top block 26 to move, and the aluminum top block 26 is inserted into the top block cavity 27 at the bottom end of the aluminum disk 14 for placing the silicon wafer. The top block cavity 27 squeezes the extrusion plate 30, so that the extrusion plate 30 drives the rotating column 29 to rotate in the elastic cavity 28, so that the extrusion plate 30 squeezes the connecting spring 10, and the surface of one end of the extrusion plate 30 returns to the pressure plate groove 31. The connecting spring 10 has elastic deformation, so that the extrusion plate 30 squeezes the inner wall of the top block cavity 27, so that the aluminum top block 26 is fixed in the top block cavity 27. At this time, the aluminum disk 14 for placing the silicon wafer is fixed on the aluminum top block 26. The first motor 4 is controlled to continue to move, so that the screw slider 6 drives the plug 8 to slowly move out of the slot 15.

[0039] The hydraulic press 25 drives the aluminum plate 14 for placing the silicon wafer to move downward into the lifting chamber 9 through the aluminum top block 26, so as to facilitate the lifting and lowering of the aluminum plate 14 for placing the silicon wafer. When the aluminum plate 14 for placing the silicon wafer moves into the turntable chamber 2 inside the thermal annealing turntable 13, the bottom surface of the aluminum plate 14 for placing the silicon wafer is in active contact with the top surface of the supporting bottom block 16. The supporting bottom block 16 limits the moving distance of the aluminum plate 14 for placing the silicon wafer, and when the bottom surface of the aluminum plate 14 for placing the silicon wafer is in contact with the top surface of the supporting bottom block 16, the inclined plug block 17 is inserted into the aluminum plate 14 for placing the silicon wafer, and the first inclined surface 18 of the inclined plug block 17 slightly squeezes the second inclined surface 23 of the extrusion block 22, so that the extrusion block 22 drives the extrusion spring 21 and the ceramic arc surface reinforcement block 24 to move a small distance toward the edge of the silicon wafer. The ceramic arc-surface reinforcement blocks 24 move away from each other, so that several ceramic arc-surface reinforcement blocks 24 automatically make slight contact and fix the edge of the silicon wafer, so that the silicon wafer remains stable during the rotation process and thermal annealing treatment, and effectively prevents the silicon wafer from shifting during the thermal annealing treatment or rotation process, thereby improving the overall stability and reducing the potential damage or shift of the silicon wafer caused by vibration. The ceramic material of the ceramic arc-surface reinforcement block 24 has good thermal conductivity, and slight contact can enhance the conduction of heat, ensuring that the silicon wafer is heated evenly during the thermal annealing process, avoiding local overheating or uneven cooling, and by providing a stable fixing force, reducing the thermal stress generated by the silicon wafer during the heat treatment process, reducing the risk of deformation, ensuring that the silicon wafer maintains its integrity in optical testing or related applications, and avoiding the degradation of the optical performance of the silicon wafer due to movement.

[0040] When a silicon wafer is placed on the aluminum plate 14 in the turntable cavity 2, the hydraulic press 25 drives the aluminum top block 26 to move downward, and because the support bottom block 16 limits the position of the aluminum top block 26, the silicon wafer is placed on the aluminum plate 14 stably placed on several support bottom blocks 16, so that the top surface of the aluminum top block 26 is separated from the top block cavity 27. At this time, it is convenient to control the second motor 11 to work, so that the second motor 11 drives the rotating shaft 12 to rotate, and the rotating shaft 12 drives the thermal annealing turntable 13 to rotate, and replace the next turntable cavity 2 to be installed, and control the hydraulic press 25 to move, repeat the above operation to move the silicon wafer placement aluminum plate 14 through the lifting cavity 9 into the sealing cover plate 3, and then control the first motor 4 to work through the controller to make the plug 8 contact with the slot 15, and then control the hydraulic press 25 through the controller to drive the aluminum top block 26 to move downward, and because the plug 8 limits the slot 15, the silicon wafer is placed on the aluminum plate 14 is stably mounted on two pins 8, which is convenient for placing silicon wafers. The aluminum plate 14 is stably moved in the detection direction automatically, so that several stably fixed silicon wafers can be subjected to thermal annealing treatment. Multiple silicon wafers can be processed simultaneously in one thermal annealing, thereby significantly improving production efficiency, reducing single processing time, shortening the conversion time and downtime of the thermal annealing treatment device 1, and improving overall production efficiency. Stably fixed silicon wafers can ensure that each wafer maintains the same heating conditions during the thermal annealing process, avoiding local temperature differences, and ensuring the consistency and repeatability of the treatment. Consistent thermal treatment conditions help to improve the yield of the final product and reduce waste caused by improper treatment. Stable fixation can reduce displacement and deformation during the thermal treatment process, and reduce the risk of silicon wafer cracking or failure due to thermal stress, thereby ensuring the properties and structural integrity of the silicon wafer. Concentrated processing of multiple silicon wafers can make it easier to control key parameters such as thermal annealing temperature, time and atmosphere, thereby optimizing the treatment effect.

[0041] And when the thermal annealing treatment of multiple silicon wafers is completed, the above operation is repeated in reverse, and the silicon wafers after thermal annealing are slowly sent for inspection in batches. The silicon wafers after thermal annealing are automatically sent for inspection, and the operation is performed in a closed environment without manual operation, thereby reducing the probability of contamination of the silicon wafers after thermal annealing. The contamination that may be introduced during manual operation, such as dust and grease on the hands, the automated operation helps to ensure that each silicon wafer is processed under full conditions before inspection, further reducing the risk of contamination. Operation in a closed environment can effectively prevent the influence of external dust, chemicals and other pollution sources on the silicon wafer. The closed environment can provide controllable atmosphere conditions such as gas composition, humidity, etc., to prevent pollutants produced by chemical reactions from interfering with the wafer, which helps to maintain the consistency of the inspection conditions, thereby improving the accuracy and reliability of the inspection results, preventing the impact of contamination on the inspection, and more accurately reflecting the true state of the silicon wafer, which is helpful for subsequent quality control.

Claims

1. A silicon wafer thermal annealing treatment device, comprising a thermal annealing treatment device (1), characterized in that: The top surface of the thermal annealing treatment device (1) is provided with a sealing cover plate (3), the top surface of the thermal annealing treatment device (1) is provided with two automatic inspection components, the interior of the thermal annealing treatment device (1) is provided with a rotating replacement component, the inner surface of the rotating replacement component is provided with a silicon wafer placement aluminum plate (14) evenly and movably mounted, the top surface of the silicon wafer placement aluminum plate (14) is provided with silicon wafer limit blocks (19) evenly and distributedly mounted, the inner surface of the rotating replacement component is provided with supporting bottom blocks (16) evenly mounted, the top surfaces of a plurality of the supporting bottom blocks (16) are provided with inclined plug blocks (17), and a plurality of the inclined plug blocks (17) are all provided with a first inclined surface (18), a plurality of the silicon wafer limiting blocks (19) are provided with an active cavity (20), the inner walls of the plurality of active cavities (20) are uniformly provided with extrusion springs (21), the plurality of extrusion springs (21) are installed on the inner wall of the active cavity (20), the outer surfaces of the plurality of extrusion springs (21) are commonly provided with an extrusion block (22), a second inclined surface (23) is provided on the plurality of extrusion blocks (22), one end surface of the extrusion block (22) is provided with a ceramic arc surface reinforcement block (24), and the thermal annealing treatment device (1) is provided with a push-moving replacement component.

2. A silicon wafer thermal annealing treatment device according to claim 1, characterized in that: The outer surface of the first inclined surface (18) is in active contact with the outer surface of the second inclined surface (23), and the outer surface of the ceramic arc surface reinforcement block (24) and the outer surface of the extrusion block (22) are both in active contact with the inner wall of the active cavity (20).

3. A silicon wafer thermal annealing treatment device according to claim 1, characterized in that: The rotary replacement assembly comprises a second motor (11) and a lifting chamber (9); two lifting chambers (9) are provided inside the thermal annealing treatment device (1); a second motor (11) is installed inside the thermal annealing treatment device (1); a rotating shaft (12) is installed on the outer surface of the output end of the second motor (11); one end surface of the rotating shaft (12) is in active contact with the inside of the thermal annealing treatment device (1).

4. A silicon wafer thermal annealing treatment device according to claim 3, characterized in that: A heat annealing turntable (13) is installed on the outer surface of the rotating shaft (12), turntable cavities (2) are evenly opened inside the heat annealing turntable (13), and the inner surfaces of a plurality of the turntable cavities (2) are fixedly connected to one end surface of the supporting bottom block (16).

5. The silicon wafer thermal annealing treatment equipment according to claim 1, characterized in that: The push-movement replacement assembly comprises a hydraulic press (25) and an aluminum top block (26); the hydraulic press (25) is installed inside the thermal annealing treatment device (1); and the aluminum top block (26) is installed on the outer surface of the output end of the hydraulic press (25).

6. A silicon wafer thermal annealing treatment device according to claim 5, characterized in that: The bottom surfaces of the aluminum plates (14) on which the silicon wafers are placed are all provided with top block cavities (27), and the inner walls of the top block cavities (27) are in active contact with the outer surfaces of the aluminum top blocks (26).

7. A silicon wafer thermal annealing treatment device according to claim 6, characterized in that: The interior of the aluminum top block (26) is evenly provided with bullet cavities (28), the inner wall of the bullet cavity (28) is movably provided with a rotating column (29), and the outer surface of the rotating column (29) is provided with an extrusion plate (30).

8. A silicon wafer thermal annealing treatment device according to claim 7, characterized in that: Connecting springs (10) are installed on the inner walls of several of the elastic chambers (28), one end surface of several of the connecting springs (10) is fixedly connected to the outer surface of the extrusion plate (30), and the interior of the aluminum top block (26) is evenly provided with pressure plate grooves (31), and the inner walls of the pressure plate grooves (31) are in active contact with the outer surface of the extrusion plate (30).

9. The silicon wafer thermal annealing treatment equipment according to claim 1, characterized in that: The automatic inspection component comprises a first motor (4) and a ball screw (5), wherein the first motor (4) is mounted on the top surface of the thermal annealing device (1), and the ball screw (5) is mounted on the outer surface of the output end of the first motor (4). A limit slide rail (7) is mounted on the top surface of the thermal annealing device (1).

10. A silicon wafer thermal annealing treatment device according to claim 9, characterized in that: A screw slider (6) is movably mounted on the outer surface of the ball screw (5), and the outer surface of the screw slider (6) is in movable contact with the outer surface of the limit slide rail (7). A plug post (8) is mounted on the outer surface of the screw slider (6), and two slots (15) are provided inside the aluminum plate (14) for placing the silicon wafer, and the outer surface of the plug post (8) is in movably contact with the inner wall of the slot (15).

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