De-bonding device, bonding method and de-bonding method

Abstract

The invention discloses a de-bonding device, a bonding method and a de-bonding method. The de-bonding device comprises a laser source for providing infrared laser for performing de-bonding through a carrier silicon wafer; the galvanometer is used for transmitting the infrared laser to the first surface of the carrier silicon wafer and irradiating a bonding layer through the carrier silicon wafer, and the galvanometer is used for de-bonding the carrier silicon wafer and a device according to a target scanning speed by adjusting the laser frequency, and the device is bonded on the second surface of the carrier silicon wafer through the bonding layer, and a laser spot generated by a next pulse corresponding to the target scanning speed is next to a laser spot generated by a previous pulse and is not overlapped with the laser spot generated by the previous pulse. According to the invention, nondestructive de-bonding can be carried out on the permanently bonded silicon wafer, so that the separated silicon wafer can be reused, subsequent processing is facilitated, the permanent bonding de-bonding efficiency can be improved, and the overall size of de-bonding equipment is reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processes, and in particular to a debonding device, a wafer bonding method, a wafer debonding method, and a computer-readable storage medium. Background Art

[0002] In the prior art, after the carrier and the device are permanently bonded, they can usually only be debonded by mechanical peeling. However, when mechanical peeling is used to debond the device only before annealing, this method is not only easy to damage the carrier and there is a risk of cracking, but also makes the carrier and the device separated by debonding after annealing unusable.

[0003] In order to avoid the damage to the debonded wafer and device caused by the above mechanical method, the commonly used debonding technology is UV laser debonding technology. The UV laser debonding technology targets a glass substrate that can be penetrated by UV lasers, and uses an organic adhesive to temporarily bond the wafer and device. Then, the UV laser penetrates the glass material to melt the organic adhesive, completing the temporary debonding process.

[0004] However, there are still significant technical limitations in using UV lasers for debonding. First, the glass substrate used for temporary bonding cannot be used for permanent bonding. Permanent bonding is obtained by bonding silicon wafers and then annealing. Now it can only be debonded mechanically. Existing semiconductor equipment is mainly designed around silicon devices, but UV lasers cannot penetrate the silicon wafer carrier made of silicon material. Therefore, UV lasers cannot be used to debond permanent bonds. If UV lasers must be used to debond permanent bonds, expensive upgrades are required to enable it to handle glass substrates. For example, specific tools are required to process glass substrates, and the maximum processing temperature needs to be 350°C, and the process conditions are strictly limited. Moreover, the organic adhesive melted by UV laser is difficult to peel off and remove from the silicon wafer carrier and / or device after being melted, and it is easy to remain, which will affect the subsequent use of the silicon wafer carrier and the device.

[0005] In order to solve the above-mentioned problems existing in the prior art, the art urgently needs a debonding technology that can non-destructively debond permanently bonded silicon wafers, so that the separated silicon wafers can be reused, which is beneficial for subsequent processing. At the same time, it can also improve the efficiency of debonding and reduce the overall volume of the debonding equipment. Summary of the invention

[0006] A brief summary of one or more aspects is given below to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceived aspects, and is neither intended to identify the key or decisive elements of all aspects nor to define the scope of any or all aspects. Its only purpose is to give some concepts of one or more aspects in a simplified form as a prelude to a more detailed description that will be given later.

[0007] In order to overcome the above-mentioned defects of the prior art, the present invention provides a debonding device, a wafer bonding method, a wafer debonding method, and a computer-readable storage medium, which can non-destructively debond permanently bonded silicon wafers, so that the separated silicon wafers can be reused, which is beneficial for subsequent processing. At the same time, it can also improve the efficiency of debonding permanent bonds and reduce the overall volume of the debonding equipment.

[0008] Specifically, the debonding device provided according to the first aspect of the present invention includes: a laser source, which provides an infrared laser for debonding through a carrier silicon wafer; and a galvanometer, which is used to transmit the infrared laser to the first side of the carrier silicon wafer and irradiate the bonding layer through the carrier silicon wafer, and by adjusting the laser frequency, the galvanometer debonds the carrier silicon wafer and the device at a target scanning speed, wherein the device is bonded to the second side of the carrier silicon wafer via the bonding layer, and the laser spot generated by the next pulse corresponding to the target scanning speed is adjacent to the laser spot generated by the previous pulse and do not overlap with each other.

[0009] Furthermore, in some embodiments of the present invention, the target scanning speed of the galvanometer is calculated by the overlap rate of the laser spots and the laser frequency, and the calculation formula of the target scanning speed is as follows: Wherein, freq represents the laser frequency, τ represents the pulse width, v represents the target scanning speed, d represents the spot diameter, and a represents the overlap rate.

[0010] Furthermore, in some embodiments of the present invention, the laser repetition rate provided by the laser source is in the range of 100 Hz to 100 MHz.

[0011] Furthermore, in some embodiments of the present invention, a field lens is further included, which is located at the output end of the galvanometer and is used to receive the infrared laser emitted by the galvanometer and focus it onto the bonding layer.

[0012] Further, in some embodiments of the present invention, the actual scanning speed range of the galvanometer is obtained by calculating the focal length of the field lens, and is used to constrain the target scanning speed, wherein the formula for calculating the actual scanning speed range is as follows: Wherein, f represents the actual focal length of the field lens, f′ represents the given focal length of the field lens, and V represents the given scanning speed range corresponding to the given focal length of the field lens.

[0013] Furthermore, in some embodiments of the present invention, the bonding layer includes an inorganic adhesive and is bonded to the device through molecular forces.

[0014] Further, in some embodiments of the present invention, the inorganic binder includes titanium nitride.

[0015] Furthermore, in some embodiments of the present invention, a beam expansion and collimation system is also included, which is located between the laser source and the galvanometer and is used to expand the spot diameter of the infrared laser to match the spot size of the galvanometer.

[0016] In addition, the above-mentioned bonding method provided according to the second aspect of the present invention includes the following steps: obtaining a carrier silicon wafer; preparing a bonding peeling layer on the second side of the carrier silicon wafer, wherein the bonding peeling layer includes an inorganic adhesive; and bonding a device to the second side of the carrier silicon wafer via the bonding layer to obtain a bonding component.

[0017] In addition, the above-mentioned debonding method provided according to the third aspect of the present invention includes the following steps: obtaining the bonding part prepared by the above-mentioned bonding method provided by the second aspect of the present invention, wherein the bonding part includes a carrier silicon wafer and a device; obtaining an infrared laser for debonding through the carrier silicon wafer through the laser source in the above-mentioned debonding device provided by the first aspect of the present invention; and adjusting the laser frequency so that the galvanometer in the debonding device debonds the carrier silicon wafer and the device at a target scanning speed.

[0018] In addition, according to the fourth aspect of the present invention, there is also provided a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed by a processor, the above-mentioned debonding method provided by the third aspect of the present invention is implemented. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or features may have the same or similar reference numerals.

[0020] Figure 1A A flow chart of a bonding method provided according to some embodiments of the present invention is shown;

[0021] Figure 1B for Figure 1A A schematic diagram of the structure of a bonding component obtained by the wafer bonding method shown;

[0022] Figure 2 A schematic structural diagram of a debonding device provided according to some embodiments of the present invention is shown; and

[0023] Figure 3 A flow chart of a debonding method provided according to some embodiments of the present invention is shown.

[0024] Reference numerals:

[0025] Steps S110 to S130;

[0026] 100 Bonding parts;

[0027] 110 carrier silicon wafer;

[0028] 120 bonding layer;

[0029] 130 devices;

[0030] 200 Debonding device;

[0031] 210 laser source;

[0032] 220 Optical system;

[0033] 221 galvanometer;

[0034] 222 Field Mirror;

[0035] 223 Beam expansion and collimation system;

[0036] 230 chuck assembly;

[0037] 240 infrared laser; and

[0038] Steps S310~S330. DETAILED DESCRIPTION

[0039] The following specific embodiments illustrate the implementation of the present invention, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this invention are limited to this implementation. On the contrary, the purpose of introducing the invention in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide a deep understanding of the present invention, the following description will include many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0040] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] In addition, the terms "upper", "lower", "left", "right", "top", "bottom", "horizontal" and "vertical" used in the following description should be understood as the directions shown in the paragraph and the related drawings. Such relative terms are only used for the convenience of description and do not mean that the device described therein must be manufactured or operated in a specific direction, and therefore should not be understood as limiting the present invention.

[0042] It is understood that although the terms "first", "second", "third", etc. may be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below may be referred to as a second component, region, layer and / or part without departing from some embodiments of the present invention.

[0043] As mentioned above, there are still considerable technical limitations in using UV lasers for debonding. First, the glass substrate used for debonding temporary bonding cannot be used for permanent bonding. Permanent bonding is obtained by bonding silicon wafers and then annealing. Now it can only be debonded mechanically. Existing semiconductor equipment is mainly designed around silicon devices, but UV lasers cannot penetrate silicon wafer carriers made of silicon materials. Therefore, UV lasers cannot be used to debond permanent bonds. If UV lasers must be used to debond permanent bonds, expensive upgrades are required to enable it to handle glass substrates. For example, specific tools are required to process glass substrates, and the maximum processing temperature needs to be 350°C, and the process conditions are strictly limited. Moreover, the organic adhesive melted by UV laser is difficult to peel off and remove from the silicon wafer carrier and / or device after being melted, and it is easy to remain, which will affect the subsequent use of the silicon wafer carrier and the device.

[0044] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a debonding device, a bonding method, a debonding method, and a computer-readable storage medium, which can non-destructively debond permanently bonded silicon wafers, so that the separated silicon wafers can be reused, which is beneficial to subsequent processing. At the same time, it can also improve the efficiency of debonding permanent bonds and reduce the overall volume of the debonding equipment.

[0045] In some non-limiting embodiments, the debonding device provided in the first aspect of the present invention can debond the bonded member obtained by the bonding method provided in the second aspect of the present invention. Further, the debonding can be performed by the debonding method provided in the third aspect of the present invention.

[0046] Specifically, in some non-limiting embodiments, the computer-readable storage medium provided in the fourth aspect of the present invention stores computer instructions, which, when executed by a processor, can be used to implement the debonding method provided in the third aspect of the present invention.

[0047] The working principle of the above-mentioned debonding device will be described below in conjunction with some embodiments of bonding methods and debonding methods. Those skilled in the art will understand that these embodiments of bonding methods and debonding methods are only some non-limiting implementation methods provided by the present invention, which are intended to clearly demonstrate the main concept of the present invention and provide some specific solutions that are convenient for the public to implement, rather than to limit all working modes or all functions of the debonding device. Similarly, the debonding device is also only a non-limiting implementation method provided by the present invention, and does not constitute a limitation on the implementation subject of each step in these bonding methods and debonding methods.

[0048] Please refer to Figure 1A and Figure 1B , Figure 1A A flow chart of a bonding method provided according to some embodiments of the present invention is shown. Figure 1B for Figure 1A Schematic diagram of the structure of the bonding part obtained by the bonding method shown.

[0049] like Figure 1A As shown, in some embodiments of the present invention, the wafer bonding method may include the following steps: First, step S110 may be performed: obtaining a carrier silicon wafer.

[0050] Specifically, by integrating circuits on a wafer, a chip device that can achieve a specific function can be formed. Since thicker wafer devices are difficult to meet the heat dissipation and packaging requirements of high-end chips, the semiconductor field often requires the wafer used as a device to be thinned to achieve the required thickness. When the thickness of the wafer is reduced to less than 200 microns, the ultra-thin wafer becomes fragile and prone to warping. Therefore, Figure 1B As shown, a carrier silicon wafer 110 with relatively high mechanical strength can be used to carry such a relatively fragile device 130, such as an ultra-thin wafer, to fix and protect the device 130. By supporting and fixing the carrier silicon wafer 110, the device 130 can be thinned, processed in circuits, and other subsequent processes.

[0051] Furthermore, current semiconductor devices are mainly designed around silicon devices, so using a silicon wafer as the carrier silicon wafer 110 can facilitate subsequent processing and preparation. Semiconductors, as precision devices, have extremely high requirements for the purity of silicon. Therefore, the carrier silicon wafer 110 can preferably be a high-purity silicon wafer made of silicon material.

[0052] Continue as Figure 1A As shown, step S120 may be performed: preparing a bonding layer on the second surface of the carrier silicon wafer.

[0053] Specifically, if Figure 1B As shown, a layer of inorganic material can be grown on the carrier silicon wafer 110 by plasma enhanced chemical vapor deposition (PECVD) equipment to prepare a bonding layer 120. Optionally, the inorganic material used to prepare the bonding layer 120 can be titanium nitride (TiN), but the inorganic material includes but is not limited to TiN, which can be developed according to subsequent process requirements. Compared with the organic adhesive commonly used in the absorption technology, the inorganic adhesive has higher thermal stability, can be applied to high temperature and high pressure semiconductor processing conditions, and is not easy to be decomposed by heat during the processing process and fall off suddenly.

[0054] Continue as Figure 1A As shown, step S130 may be performed: bonding the device to the second surface of the carrier silicon wafer via the bonding layer to obtain a bonded component.

[0055] Specifically, if Figure 1B As shown, in this embodiment, an inorganic adhesive can be selected as the bonding layer 120 to bond the device 130 to the carrier silicon wafer 110, and the device 130 is bonded to the second surface (e.g., the lower surface) of the carrier silicon wafer 110 to form a bonding member 100. Since the bonding layer 120 and the device 130 can be directly bonded, that is, bonded by molecular force to form a Si-O bond, the bonding layer 120 does not affect the bonding effect between the device 130 and the carrier silicon wafer 110.

[0056] The bonded bonding member 100 can be debonded by using a debonding device and a debonding method provided in another aspect of the present invention.

[0057] Specifically, see Figure 2 , Figure 2 A schematic structural diagram of a debonding device provided according to some embodiments of the present invention is shown.

[0058] like Figure 2As shown, in some embodiments of the present invention, the debonding device 200 may include a laser source 210 and an optical system 220. The laser source 210 may provide an infrared laser 240 for debonding through the carrier silicon wafer 110, and the first surface of the carrier silicon wafer 110 is the laser incident side. The optical system 220 may transmit the infrared laser 240 to the first surface (such as the upper surface) of the carrier silicon wafer 110, and irradiate the bonding layer 120 through the carrier silicon wafer 110 to debond the carrier silicon wafer 110 and the device 130, wherein the device 130 may be bonded to the second surface (such as the lower surface) of the carrier silicon wafer 110 via the bonding layer 120.

[0059] In this embodiment, since the carrier silicon wafer 110 is made of silicon material, the conventional ultraviolet laser cannot penetrate the carrier silicon wafer 110, and only the infrared laser with a wavelength greater than 1200 nm can penetrate the silicon without damage and irradiate the bonding layer 120 of the bonding component 100. The laser source 210 may emit an infrared laser with a wavelength greater than 1300 nm.

[0060] Furthermore, since the bonding layer 120 in this embodiment is made of inorganic material, when the energy density of the infrared laser 240 reaching the bonding layer 120 reaches a certain threshold, the inorganic material will form multi-photon absorption, and the lattice absorbs energy to generate oscillations, resulting in chemical bond breakage, thereby achieving inorganic material modification of the bonding layer 120, and non-destructively completing the permanent debonding of the device 130 and the carrier silicon wafer 110. Moreover, compared with the common organic bonding layer, the bonding layer 120 made of inorganic material in this embodiment is easy to remove after being peeled off.

[0061] Continue as Figure 2 As shown, in some embodiments of the present invention, the optical system 220 may include a galvanometer 221. The laser frequency is adjusted so that the galvanometer 221 debonds the carrier silicon wafer 110 and the device 130 at a target scanning speed, wherein the laser spot generated by the next pulse corresponding to the target scanning speed is adjacent to the laser spot generated by the previous pulse and does not overlap each other.

[0062] Specifically, the galvanometer 221 may include a first reflector and a second reflector, and the two reflectors are respectively mounted on two corresponding rotation axes ( Figure 2The two rotating shafts can be driven to rotate by two motors respectively. The working principle of the galvanometer 221 is to make the infrared laser 240 incident on the two reflectors, and then control the reflection angles of the two reflectors respectively through their respective motors, so that the infrared laser 240 reflected by the two reflectors can be respectively scanned along the X and Y axes, thereby achieving the deflection of the infrared laser 240, so that the infrared laser 240 with a certain power density is reflected to any point on the bonding layer 120 (i.e., the target area). In other words, through the vibration of the galvanometer 221, the direction and angle of the incident infrared laser 240 can be changed, so that the infrared laser 240 irradiated to the bonding layer 120 can be moved and scanned in the X and Y directions, thereby achieving complete debonding of the carrier silicon wafer 110 and the device 130.

[0063] Compared to the traditional method of adjusting the scanning position of the light beam by linearly moving the platform of the wafer carrier, firstly, the movement speed of the general carrier is completely unable to reach the movement speed of the galvanometer 221. Therefore, the use of the galvanometer 221 in this embodiment can reduce the scanning radiation time of the entire wafer, thereby improving the efficiency of de-permanent bonding. Secondly, the movement of the carrier requires a larger movement space. In contrast, the galvanometer 221 in the present invention controls the movement position of the laser by adjusting the angle in situ. Therefore, the galvanometer itself does not have translational movement and does not require more movement space, which is conducive to reducing the volume of the whole machine.

[0064] Furthermore, in some embodiments of the present invention, the target scanning speed of the galvanometer 221 can be calculated by the overlap of the laser spots and the laser frequency. The calculation formula of the target scanning speed can be as follows:

[0065]

[0066] Wherein, freq represents the laser frequency (Hz), τ represents the pulse width, v represents the target scanning speed (m / s), d represents the spot diameter (m), and a represents the overlap rate (%). The laser frequency freq and the overlap rate a are adjustable variables, so the scanning speed that matches them can be obtained. Since the repetition rate of the pulsed laser determines the number of pulses it outputs per second, the scanning speed of the galvanometer 221 can be adjusted by adjusting the laser frequency so that the laser spot generated by the next pulse is close to the laser spot generated by the previous pulse and does not overlap with each other, thereby speeding up the scanning speed of the bonding layer and improving the debonding efficiency.

[0067] Those skilled in the art will understand that it is an ideal state that the laser spot generated by the next pulse does not overlap with the laser spot generated by the previous pulse. In the actual process of laser debonding, the laser spots generated by the previous and subsequent pulses may have a certain small overlap rate, for example, the overlap rate a=10%. The smaller the overlap rate of the spots, the shorter the time spent on debonding.

[0068] Optionally, the laser repetition rate may be adjustable in the range of 100 Hz to 100 MHz, the output energy may be in the range of 100 nJ to 1 mJ, and the pulse width may be in the range of 400 fs to 10 ns.

[0069] like Figure 2 As shown, the optical system 220 may further include a field lens 222. The field lens 222 may receive the infrared laser 240 emitted by the galvanometer 221 and focus it onto the bonding layer 120. The function of the field lens 222 is to focus the infrared laser 240 so that the laser energy is more concentrated. In the process of infrared laser debonding by scanning irradiation by the galvanometer 221, the field lens 222 may allow the focused light spot to maintain a very small deformation within the entire scanning range, thereby ensuring the consistency of the laser energy of the infrared laser 240 within the entire scanning range, achieving uniform debonding, and avoiding damage to the device 130 caused by a large amount of laser energy hitting a certain area, and incomplete peeling caused by a small amount of laser energy hitting another area.

[0070] Furthermore, in some optional embodiments, the target scanning speed selected by the galvanometer 221 can be limited by the focal length of the field lens 222. Specifically, the actual scanning speed range of the galvanometer 221 can be calculated by the focal length of the field lens 222, and the formula for calculating the actual scanning speed range can be as follows:

[0071]

[0072] Where f represents the actual focal length of the field lens, f′ represents the given focal length of the field lens, and V represents the given scanning speed range corresponding to the given focal length of the field lens. The given focal length of the field lens and its corresponding given scanning speed range can both be data provided by the manufacturer. For example, when the given focal length of the field lens f ′ When 163 mm is selected, the given scanning speed range corresponding to this focal length is 5 mm / s to 8 m / s. At this time, if the actual field lens focal length f is selected as 423 mm, the actual scanning speed range of a selected galvanometer 221 can be determined by the above actual scanning speed range formula. The target scanning speed of the galvanometer 221 preset later cannot exceed the above actual scanning speed range.

[0073] In the above-mentioned embodiment of the present invention, the target scanning speed of the galvanometer 221 can be determined by the laser frequency. In other optional embodiments, the laser repetition rate of the laser can also be calculated based on the target scanning speed of the galvanometer 221. As long as the laser spot of the next pulse corresponding to the target scanning speed of the galvanometer 221 is adjacent to the previous laser spot and does not overlap each other when the galvanometer 221 is used to scan and debond the bond. For example, when the galvanometer 221 performs laser debonding at a target line scanning speed v of 8m / s, according to the focus spot diameter d of 70um and the pulse width τ of 5 picoseconds, it can be determined by calculation that the laser repetition rate output by the laser source 210 can be 282KHz.

[0074] In the above embodiment of the present invention, the infrared laser 240 enters the galvanometer 221, and is transmitted from the galvanometer 221 to enter the field lens 222. The field lens 222 can focus the infrared laser 240 on the bonding layer 120. By controlling the swing of the galvanometer 221 in the X-axis and Y-axis directions, the focused beam can achieve scanning irradiation of the entire bonding layer 120. Through the irradiation of the infrared laser, the entire bonding layer 120 made of inorganic materials can be decomposed or modified, and the bonding layer 120 can be peeled off.

[0075] Optionally, in other preferred embodiments, the optical system 220 may further include a beam expansion and collimation system 223, which is used to improve the spatial divergence angle of the infrared laser 240, improve the collimation of the light beam, and enable the laser beam to meet the aperture requirements of subsequent optical components. In this embodiment, the beam expansion and collimation system 223 may be located between the laser source 210 and the galvanometer 221. The infrared laser 240 emitted from the laser source 210 passes through the beam expansion and collimation system 223, and its divergence angle is compressed. As the beam waist radius increases, the spot size of the infrared laser 240 is expanded so that it can match the spot size of the subsequent galvanometer 221 and / or field lens 222, thereby achieving the purpose of collimating and expanding the infrared laser 240.

[0076] Please continue as Figure 2 As shown, the debonding device 200 may further include a chuck assembly 230. The chuck assembly may include an upper chuck and a lower chuck ( Figure 2 (not shown in the figure), wherein the upper chuck and the lower chuck may be provided with a suction cup structure for adsorption and picking. When the infrared laser 240 irradiates all target areas on the bonding layer 120, the carrier silicon wafer 110 and the device 130 are debonded, and the carrier silicon wafer 110 and the device 130 can be adsorbed by the upper chuck and the lower chuck respectively to complete the lossless separation of the two.

[0077] The following debonding method can be performed by using the debonding device 200 provided above.

[0078] Next, see Figure 3 , Figure 3 A flow chart of a debonding method provided according to some embodiments of the present invention is shown.

[0079] like Figure 3 As shown, in some embodiments of the present invention, the debonding method may include the following steps: First, step S310 may be performed: obtaining a bonded component prepared by the bonding method.

[0080] Specifically, it can be combined Figure 2 It is commonly understood that the bonding component 100 prepared by the above bonding method (including steps S110 to S130 ) can be obtained and flattened by the lower chuck in the chuck assembly 230 , wherein the bonding component 100 can include a carrier silicon wafer 110 and a device 130 .

[0081] Then, step S320 may be performed: obtaining infrared laser for debonding through the carrier silicon wafer through a laser source in the debonding device.

[0082] Specifically, the laser source 210 may be a laser, and a suitable infrared wavelength, generally a wavelength greater than 1300 nm, is selected as the infrared laser 240 for debonding through the carrier silicon wafer 110 .

[0083] Then, step S330 may be performed: adjusting the laser frequency so that the galvanometer in the debonding device debonds the carrier silicon wafer and the device at a target scanning speed.

[0084] Specifically, in some preferred embodiments of the present invention, before the target scanning speed of the galvanometer 221 is preset, the actual scanning speed range of the galvanometer 221 can be obtained according to the focal length of the field lens 222 to constrain the target scanning speed.

[0085] Specifically, the actual scanning speed range of the galvanometer 221 can be calculated by the focal length of the field lens 222. The formula for calculating the actual scanning speed range can be as follows:

[0086]

[0087] Wherein, f represents the actual focal length of the field lens, f′ represents the given focal length of the field lens, and V represents the given scanning speed range corresponding to the given focal length of the field lens. The given focal length of the field lens and the corresponding given scanning speed range can both be data provided by the manufacturer.

[0088] After that, since the scanning speed of the galvanometer 221 is related to the overlap rate of the laser spot and the laser frequency, and the scanning speed of the galvanometer 221 can mainly determine the time required for the entire bonding layer 120 to be debonded, the target scanning speed of the galvanometer 221 can be calculated by the overlap rate of the laser spot and the laser frequency, and the calculation formula of the target scanning speed can be as follows:

[0089]

[0090] Wherein, freq represents the laser frequency (Hz), τ represents the pulse width, v represents the target scanning speed (m / s), d represents the spot diameter (m), and a represents the overlap rate (%). The laser frequency freq and the overlap rate a are adjustable variables, so that the scanning speed matched therewith can be obtained. In addition, alternatively, in other optional embodiments, the laser repetition rate of the laser can also be reversely calculated based on the target scanning speed of the galvanometer 221. Therefore, the target scanning speed of the galvanometer 221 can also be set in advance, and then based on the target scanning speed, the corresponding output frequency of the laser source 210 is selected, so that the laser spot generated by the next pulse corresponding to the target scanning speed is close to the laser spot generated by the previous pulse and does not overlap with each other, which is conducive to speeding up the scanning speed of the bonding layer, thereby improving the debonding efficiency.

[0091] like Figure 2 As shown, in the process of infrared laser debonding, the optical system 220 may include a galvanometer 221, a field lens 222 and a beam expansion collimation system 223. The infrared laser 240 emitted by the laser may first pass through the beam expansion collimation system 223 to compress its divergence angle. At the same time, as the beam waist radius increases, the spot diameter of the infrared laser 240 expands so that it can match the spot size of the subsequent galvanometer 221 and the field lens 222. The infrared laser 240 emitted from the beam expansion collimation system 223 is incident on the two reflectors in the galvanometer 221, and the reflection angles of the two reflectors are controlled by their respective motors, so that the infrared laser 240 reflected by the two reflectors can be respectively scanned along the X and Y axes, thereby achieving the deflection of the infrared laser 240, so that the infrared laser 240 with a certain power density is reflected to any point on the bonding layer 120 (i.e., the target area). The field lens 222 can receive the infrared laser 240 emitted by the galvanometer 221 and focus it on the bonding layer 120. By controlling the swing of the galvanometer 221 in the X-axis and Y-axis directions, the focused beam can achieve scanning irradiation of the entire bonding layer 120. Through infrared laser irradiation, the entire bonding layer 120 made of inorganic materials can be decomposed or modified, and the bonding layer 120 can be peeled off.

[0092] Finally, after the infrared laser 240 completes the scanning irradiation of the entire bonding layer 120, the bonding layer 120 is inorganically decomposed and modified, and the carrier silicon wafer 110 and the device 130 are debonded. The upper chuck and the lower chuck can be used to adsorb the carrier silicon wafer 110 and the device 130 respectively, thereby completing the lossless separation of the two.

[0093] Although the above methods are illustrated and described as a series of actions for simplicity of explanation, it should be understood and appreciated that these methods are not limited by the order of the actions, because according to one or more embodiments, some actions may occur in a different order and / or concurrently with other actions from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art.

[0094] Those skilled in the art will further appreciate that the steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be directly embodied in hardware, in a software module executed by a processor, or in a combination of the two. The software module may reside in a RAM memory, a flash memory, a ROM memory, an EPROM memory, an EEPROM memory, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to a processor so that the processor can read and write information from / to the storage medium. In an alternative, a storage medium may be integrated into a processor. The processor and the storage medium may reside in an ASIC. The ASIC may reside in a user terminal. In an alternative, the processor and the storage medium may reside in a user terminal as discrete components.

[0095] In one or more exemplary embodiments, the functions described may be implemented in hardware, software, firmware, or any combination thereof. If implemented as a computer program product in software, each function may be stored on or transmitted by a computer-readable medium as one or more instructions or codes. Computer-readable media include both computer storage media and communication media, including any medium that facilitates the transfer of a computer program from one place to another. Storage media may be any available medium that can be accessed by a computer. As an example and not limitation, such a computer-readable medium may include RAM, ROM, EEPROM, CD-ROM or other optical disk storage, disk storage or other magnetic storage device, or any other medium that can be used to carry or store the desired program code in the form of an instruction or data structure and can be accessed by a computer. Any connection is also properly referred to as a computer-readable medium. For example, if the software is transmitted from a website, a server, or other remote source using a coaxial cable, a fiber optic cable, a twisted pair, a digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwaves, the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwaves are included in the definition of the medium. Disk and disc as used herein include compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and Blu-ray disc, wherein disk often reproduces data magnetically, while disc reproduces data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0096] In summary, the present invention provides a debonding device, a wafer bonding method, a wafer debonding method, and a computer-readable storage medium, which can non-destructively debond permanently bonded silicon wafers, thereby allowing the separated silicon wafers to be reused, which is beneficial for subsequent processing. At the same time, it can also improve the efficiency of debonding permanent bonds and reduce the overall volume of the debonding equipment.

[0097] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein, but should be granted the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A debonding device, characterized in that: include: a laser source, providing infrared laser light for debonding through a carrier silicon wafer; as well as A galvanometer is used to transmit the infrared laser to the first surface of the carrier silicon wafer and irradiate the bonding layer through the carrier silicon wafer, and adjust the laser frequency so that the galvanometer debonds the carrier silicon wafer and the device at a target scanning speed, The device is bonded to the second surface of the carrier silicon wafer via the device, and the laser spot generated by the next pulse corresponding to the target scanning speed is adjacent to the laser spot generated by the previous pulse and does not overlap with each other.

2. The debonding device according to claim 1, characterized in that: The target scanning speed of the galvanometer is calculated by the overlap rate of the laser spots and the laser frequency. The calculation formula of the target scanning speed is as follows: Among them, freq represents the laser frequency, τ represents the pulse width, v represents the target scanning speed, d represents the spot diameter, and a represents the overlap rate.

3. The debonding device according to claim 2, characterized in that: The laser repetition frequency provided by the laser source ranges from 100 Hz to 100 MHz.

4. The debonding device according to claim 1, characterized in that: It also includes a field mirror, which is located at the output end of the galvanometer and is used to receive the infrared laser emitted by the galvanometer and focus it onto the bonding layer.

5. The debonding device according to claim 4, characterized in that: The actual scanning speed range of the galvanometer is obtained by calculating the focal length of the field mirror and is used to constrain the target scanning speed, wherein the formula for calculating the actual scanning speed range is as follows: Wherein, f represents the actual focal length of the field lens, f′ represents the given focal length of the field lens, and V represents the given scanning speed range corresponding to the given focal length of the field lens.

6. The debonding device according to claim 1, characterized in that: The bonding layer includes an inorganic adhesive and is bonded to the device through molecular force.

7. The debonding device according to claim 6, characterized in that: The inorganic binder includes titanium nitride.

8. The debonding device according to claim 1, characterized in that: It also includes a beam expansion and collimation system, which is located between the laser source and the galvanometer and is used to expand the spot diameter of the infrared laser to match the spot size of the galvanometer.

9. A bonding method, characterized in that: The following steps are involved: obtaining a carrier silicon wafer; preparing a bonding layer on the second surface of the carrier silicon wafer, wherein the bonding layer comprises an inorganic adhesive; and The device is bonded to the second surface of the carrier silicon wafer via the bonding layer to obtain a bonded component.

10. A debonding method, characterized in that: The following steps are involved: Obtaining a bonding component prepared by the bonding method according to claim 9, wherein the bonding component comprises a carrier silicon wafer and a device; Obtaining infrared laser for debonding through the carrier silicon wafer by means of a laser source in the debonding device according to any one of claims 1 to 8; and The laser frequency is adjusted so that the galvanometer in the debonding device debonds the carrier silicon wafer and the device at a target scanning speed.

11. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the debonding method according to claim 10 is implemented.

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