Gas supply assembly and semiconductor etching equipment

Abstract

The present invention provides a gas supply assembly, comprising: a first spray disc, the first spray disc comprising a central circular area, an edge annular area and a transition annular area located between the central circular area and the edge annular area; the first spraying disc is provided with first air holes, and the first air holes are formed in the thickness direction of the first spraying disc. First air holes are formed in at least one of the central circular area, the transition annular area and the edge annular area of the first spraying disc; the first spraying disc is provided with first air holes, the second spraying disc is provided with second air holes, the second air holes are formed in the thickness direction of the second spraying disc, and the first spraying disc and the second spraying disc are stacked up and down; the first air inlet is positioned right above the first spraying disc; and the second air inlet is positioned between the first spraying disc and the second spraying disc. The gas supply assembly provided by the invention can improve the uniformity of plasma distribution.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor equipment, and in particular to a gas supply component and semiconductor etching equipment. Background Art

[0002] In the process of integrated circuit manufacturing, etching equipment is required to perform multiple etching operations on the substrate. For example, in the plasma etching process, the plasma generated by the plasma source reaches the substrate surface through the gas distribution plate (showerhead), thereby forming plasma on the mask surface of the substrate. By adjusting the potential of the substrate, the charged particles in the plasma can be directed to collide vertically on the substrate, so that the material in the unmasked area on the substrate is removed. In order to make the etching rate of the substrate surface uniform, it is necessary to improve the uniformity of the distribution of the plasma on the substrate surface.

[0003] In the prior art, the etching equipment includes an upper chamber cover and a chamber, wherein a plasma gas inlet is provided at the center of the upper chamber cover, and a gas distribution plate is provided directly below the gas inlet, through which the plasma flows to a processing area defined between the gas distribution plate and a substrate support of the processing chamber. The uniformity of plasma distribution on the substrate surface can be improved by designing the gas distribution plate. Summary of the invention

[0004] The object of the present invention is to provide a gas supply component and a semiconductor etching device using the gas supply component.

[0005] In order to achieve the above objectives, the present invention is implemented by the following technical solutions: a gas supply assembly, comprising:

[0006] A first spray plate, the first spray plate comprising a central circular area, an edge annular area and a transition annular area between the central circular area and the edge annular area; the first spray plate is provided with first air holes, and the first air holes are arranged along the thickness direction of the first spray plate; at least one of the central circular area, the transition annular area and the edge annular area of ​​the first spray plate is provided with the first air holes;

[0007] A second spray plate, wherein the second spray plate is provided with second air holes, and the second air holes are arranged along the thickness direction of the second spray plate, and the first spray plate and the second spray plate are stacked up and down;

[0008] A first air inlet, wherein the first air inlet is located directly above the first spray plate;

[0009] The second air inlet is located between the first spray plate and the second spray plate, and an air inlet direction of the second air inlet is different from an air inlet direction of the first air inlet.

[0010] Preferably, the central circular area, transition annular area and edge annular area of ​​the first spray plate are all provided with first air holes, and the densities of the first air holes in the central circular area, transition annular area and edge annular area are different.

[0011] Preferably, the transition annular region and the edge annular region of the first spray plate are provided with first pores, and the density of the first pores in the transition annular region is greater than the density of the first pores in the edge annular region.

[0012] Preferably, the central circular area and the transition annular area of ​​the first spray plate are provided with first pores, and the density of the first pores in the central circular area is smaller than the density of the first pores in the transition annular area.

[0013] Preferably, the edge annular region of the first spray plate is also provided with first air holes, and the density of the first air holes in the edge annular region is less than the density of the first air holes in the transition annular region.

[0014] Preferably, the first air holes in the central circular area, the transition annular area and the edge annular area of ​​the first spray plate have different apertures.

[0015] Preferably, the aperture of the first pores of the first spray plate located in the central circular area is smaller than the aperture of the first pores located in the transition annular area.

[0016] Preferably, the aperture of the first pores of the first spray plate located in the transition annular region is larger than the aperture of the first pores located in the edge annular region.

[0017] Preferably, the first air holes in the central circular area, the transition annular area and the edge annular area of ​​the first spray plate are arranged radially.

[0018] Preferably, the first air holes in the central circular area, the transition annular area and the edge annular area of ​​the first spray plate are arranged along the circumferential direction.

[0019] Preferably, the second air holes of the second spray plate have the same aperture, and the intervals between adjacent second air holes are the same.

[0020] Preferably, the minimum aperture of the first air hole of the first spray plate is larger than the aperture of the second air hole of the second spray plate, and the first air hole and the second air hole are arranged in a staggered manner.

[0021] Preferably, the thickness of the central circular area of ​​the first spray plate is greater than the thickness of the edge annular area.

[0022] Preferably, the first spray plate has a first surface opposite to the second spray plate, and the second spray plate has a second surface opposite to the first spray plate; an annular connecting side wall is provided between the first surface and the second surface, and the annular connecting side wall is located at the edge of the first spray plate and the second spray plate; the upper surface of the annular connecting side wall is connected to the first surface, and the lower surface of the annular connecting side wall is connected to the second surface; the annular connecting side wall is provided with a third air hole, and the third air hole is arranged along the thickness direction of the annular connecting side wall.

[0023] Preferably, the edge of the second spray plate is provided with a mounting protrusion higher than the second surface; the first spray plate and the annular connecting side wall are integrally formed, and the edge of the first spray plate is provided with an annular extension portion, and the annular extension portion is connected to the side wall of the mounting protrusion; the lower surface of the annular extension portion of the first spray plate, the second surface of the second spray plate, the annular outer surface of the annular connecting side wall and the side wall of the mounting protrusion form a first uniform air zone.

[0024] Preferably, the second air inlet is located at a mounting protrusion of the second spray plate, and the second air inlet is communicated with the first gas homogenizing zone.

[0025] Preferably, the third air holes formed in the annular connecting side wall have a high-density area and a low-density area, the low-density area is arranged near the second air inlet area, and the high-density area is arranged far away from the second air inlet area.

[0026] A semiconductor etching device comprises an upper chamber cover, a first air inlet is provided at a central position of the upper chamber cover, a gas supply assembly is fixed to the upper chamber cover, and the gas supply assembly is located directly below the first air inlet; a chamber, the upper chamber cover is located above the chamber, a support base is provided inside the chamber, the gas supply assembly is located directly above the support base, and the center of the gas supply assembly is aligned with the center of the support base.

[0027] Compared with the prior art, the present invention has the following advantages:

[0028] 1. The present invention includes a first spray plate located in the upper layer and a second spray plate located in the lower layer. The first spray plate and the upper cavity cover form a primary uniform gas space, and a secondary uniform gas space is formed between the first spray plate and the second spray plate. The uniform distribution of plasma on the substrate surface is achieved through the design of two layers of gas spray plates.

[0029] 2. The first pore density and aperture of the central circular area, transition annular area and edge annular area of ​​the first spray plate of the present invention are different. The density and aperture of the first pores are determined by the etching rate spectrum. By arranging the first pores with different densities and apertures, the uniformity of plasma distribution on the substrate surface can be improved.

[0030] 3. The present invention adds a second gas inlet located on the side of the gas supply assembly, and another process gas or dilution gas can be introduced into the second gas inlet, thereby adjusting the uniformity of the plasma on the substrate surface and improving the uniformity of etching. In addition, when the etching gas is two or more process gases, in order to avoid premature mixing of the gases, the two gases are introduced into the first gas inlet and the second gas inlet respectively to achieve the desired mixing effect.

[0031] 4. The present invention sets a first uniform air zone between the second air inlet and the third air hole, and divides the third air hole formed on the annular connecting side wall into a high-density zone and a low-density zone, thereby achieving uniform air intake of the annular connecting side wall by setting third air holes of different densities. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] In order to more clearly illustrate the technical solution of the present invention, the following briefly introduces the drawings required for the description. Obviously, the drawings described below are an embodiment of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work:

[0033] Figure 1 A schematic diagram of the structure of a semiconductor etching device provided by an embodiment of the present invention;

[0034] Figure 2A A top view of a first spray plate provided in one embodiment of the present invention;

[0035] Figure 2B A top view of a first spray plate provided in another embodiment of the present invention;

[0036] Figure 2C A top view of a first spray plate provided in another embodiment of the present invention;

[0037] Figure 2D A top view of a first spray plate provided in another embodiment of the present invention;

[0038] Figure 3A A side view of a gas supply assembly provided for another embodiment of the present invention;

[0039] Figure 3B A side view of a gas supply assembly provided for another embodiment of the present invention;

[0040] Figure 3C A side view of a gas supply assembly provided for another embodiment of the present invention;

[0041] Figure 4 A side view of a first spray plate provided in accordance with another embodiment of the present invention;

[0042] Figure 5It is a schematic structural diagram of the gas supply assembly along the AA' direction of the present invention. DETAILED DESCRIPTION

[0043] The scheme proposed by the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purposes, features and advantages of the present invention more obvious and easy to understand, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. illustrated in the accompanying drawings of this specification are only used to match the contents disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the limiting conditions for the implementation of the present invention, so they have no technical substantive significance. Any structural modification, change in proportional relationship or adjustment of size, without affecting the effects that the present invention can produce and the purposes that can be achieved, should still fall within the scope of the technical content disclosed by the present invention.

[0044] The invention provides a gas supply component which can be used in semiconductor etching equipment. Figure 1 A semiconductor etching device provided according to an embodiment of the present invention is shown.

[0045] like Figure 1 As shown, the semiconductor etching equipment includes an upper chamber cover, an electrode assembly, a gas supply assembly, a chamber and an exhaust assembly (not shown). The semiconductor etching equipment can use an upper electrode radio frequency coil to excite plasma, or use remote plasma, and there is no restriction on the electrode for generating plasma. Among them, the remote plasma device 10 is used to excite the introduced process gas into plasma. The gas supply assembly 12 includes a first spray plate 121 and a second spray plate 122, the first spray plate and the second spray plate are stacked up and down, and an annular connecting side wall 123 is provided between the first spray plate and the second spray plate. The gas supply assembly is fixed below the upper chamber cover 14, and a first air inlet 141 is provided at the central position of the upper chamber cover, and the symmetry center line Z of the gas supply assembly coincides with the symmetry center line of the first air inlet. The gas supply assembly is also provided with a second air inlet 142, the second air inlet is located between the first spray plate and the second spray plate, and the air inlet direction of the second air inlet is different from the air inlet direction of the first air inlet. The first spray plate is provided with a plurality of first air holes, and the second spray plate is provided with a plurality of second air holes.

[0046] The chamber includes a support base 16 and a bushing 17. The support base is arranged in the chamber and is used to place the substrate W to be processed. The gas supply assembly is located directly above the support base, and the symmetry center line of the gas supply assembly coincides with the symmetry center line of the support base. The bushing 17 is arranged on the inner surface of the side wall of the chamber and is arranged around the support base 16, and is used to evenly distribute the process gas on the surface of the substrate, and the process gas after the process treatment is discharged from the chamber. The support base also includes a plurality of lifting pins 161. The substrate is supported by the lifting pins so that the substrate is separated from the support base so that the robot can take the substrate. A lifting device is provided at the bottom of the support base so that the support base can move up and down. The chamber side wall 18 is provided with an exhaust port, and the exhaust port is connected to the exhaust assembly, which is used to discharge the process gas after the process treatment from the chamber. The exhaust assembly includes a pump. The chamber side wall is also provided with an air inlet pipe 19, and the air inlet pipe is used to provide a second process gas to the second air inlet of the gas supply assembly. The gas inlet pipe of the second process gas is arranged on the side wall of the chamber, which can effectively avoid interference during the opening process.

[0047] When the semiconductor etching equipment is working, a near-vacuum state is created and maintained in the chamber through exhaust components such as pumps. In this state, process gas and plasma are uniformly input into the chamber through the gas supply component. For example, in the semiconductor processing process, silicon-based materials are usually used to manufacture substrates. When the silicon substrate is placed in the air, the surface will naturally oxidize to form a dense SiO2 layer. Some processes require the removal of the SiO2 layer on the surface of the silicon substrate before processing. At present, plasma etching is usually used to remove SiO2 on the substrate surface, such as etching SiO2 with plasma generated by HF and NH3. During the etching process, HF, NH3 and SiO2 react to generate (NH4)2SiF6, which can achieve the removal of SiO2. The generation of plasma can be achieved by a remote plasma source (RPS). The remote plasma source is a device that excites process gas to generate plasma, which is specifically used to provide activated gas and free radicals for the reaction chamber. Since the plasma is generated in the remote plasma source reaction chamber, the activated gas and free radicals enter the process chamber through the first gas inlet to process the substrate in the process chamber.

[0048] The present invention provides a gas supply assembly, comprising: a first spray plate 121, the first spray plate comprising a central circular area 21, an edge annular area 23 and a transition annular area 22 located between the central circular area and the edge annular area; the first spray plate is provided with a first air hole 25, the first air hole is arranged along the thickness direction of the first spray plate; at least one of the central circular area, the transition annular area and the edge annular area of ​​the first spray plate is provided with the first air hole 25;

[0049] A second spray plate 122, wherein the second spray plate is provided with second air holes, and the second air holes are arranged along the thickness direction of the second spray plate, and the first spray plate and the second spray plate are stacked up and down;

[0050] A first air inlet 141 is located directly above the first spray plate 121;

[0051] The second air inlet 142 is located between the first spray plate and the second spray plate, and the air inlet direction of the second air inlet is different from that of the first air inlet.

[0052] like FIG. 2A to FIG. 2D As shown, the main bodies of the first spray plate 121 and the second spray plate 122 are generally discs or plates. The first spray plate and the second spray plate can be made of transparent fused quartz material or opaque quartz glass material. The gas supply assembly can also be made of any suitable material and coated with transparent quartz material. Any material can be aluminum, aluminum alloy, steel, stainless steel, aluminum oxide or other metals and alloys.

[0053] The air inlet direction refers to the direction in which the process gas flows along the air inlet. Specifically, the air inlet direction of the process gas along the first air inlet is a vertical direction, and the air inlet direction of the process gas along the second air inlet is a horizontal direction. The air inlet direction of the first air inlet is perpendicular to the air inlet direction of the second air inlet. Furthermore, the air inlet direction of the first air inlet is at a certain angle to the air inlet direction of the second air inlet.

[0054] like FIG. 3A to FIG. 3C As shown, the first spray plate 121 has a first surface 321 opposite to the second spray plate, and the first spray plate is provided with a third surface 322 opposite to the first surface. The second spray plate has a second surface 323 opposite to the first spray plate, and the second spray plate is provided with a fourth surface 324 opposite to the second surface.

[0055] A gas supply assembly provided by the present invention includes a first spray plate 121 located at the upper layer and a second spray plate 122 located at the lower layer. A primary uniform gas space is formed between the third surface 322 of the first spray plate 121 opposite to the upper cavity cover and the lower surface of the upper cavity cover, and a secondary uniform gas space is formed between the first surface of the first spray plate 121 and the second surface 323 of the second spray plate. The first process gas or plasma enters the primary uniform gas space through the first gas inlet 141. Since the gas concentrations near the first gas inlet 141 and far from the first gas inlet 141 are different, the primary uniform gas space can achieve preliminary mixing of the first process gas or plasma. Through the second gas inlet 142 located on the side arranged between the first spray plate 121 and the second spray plate 122, the second gas inlet 142 can be introduced into the second process gas or dilution gas. By controlling the flow rate and type of the second process gas or dilution gas, the secondary uniform gas space can be used to achieve further uniform distribution of the process gas, thereby improving the uniformity of the plasma on the substrate surface. In addition, since plasma has a strong etching ability, the plasma will not only react with the substrate, but also corrode the side walls of the chamber of the semiconductor etching equipment and the top wall of the upper chamber cover, for example, the upper chamber cover is made of aluminum. By inputting different process gases or plasma into the chamber respectively, the corrosion of the lower surface of the upper chamber cover by the plasma can be reduced.

[0056] In some embodiments, FIG. 2A to FIG. 2D As shown, the central circular area 21, the transition annular area 22 and the edge annular area 23 of the first spray plate are all provided with first air holes 25, and the densities of the first air holes in the central circular area, the transition annular area and the edge annular area are different.

[0057] In some embodiments, the transition annular region 22 and the edge annular region 23 of the first spray plate are provided with first pores 25 , and the first pore density in the transition annular region 22 is greater than the first pore density 23 in the edge annular region.

[0058] like Figure 2A and 3AAs shown, the first air hole 25 is not provided in the central circular area 21 of the first spray plate 121. If the first air hole 25 is opened in the central circular area 21, and the density and aperture of the first air hole are the same as those of the transition annular area and / or the edge annular area, then when the first process gas passes through the first spray plate 121, since the first air inlet 141 is located at the central position of the upper cavity cover, the gas concentration of the first process gas in the central circular area of ​​the first surface 321 of the first spray plate 121 will be greater than the gas concentration in the surrounding area of ​​the first surface of the first spray plate. If the first air hole 25 in the central circular area is not regulated, that is, the same first air hole as that in the transition annular area, i.e., the edge annular area, is opened in the central circular area, even if the secondary gas uniformity is performed by the second spray plate, the process gas distribution on the substrate surface may be uneven, resulting in a situation where the etching rate in the middle of the substrate is fast and the etching rate at the edge is slow.

[0059] The density and aperture of the first pores in the transition annular region 22 are greater than the density and aperture of the first pores in the edge annular region 23. In some embodiments, since the gas supply assembly also performs side air intake through the third pores arranged on the annular connecting side wall, the gas concentration in the edge region of the secondary uniform gas space will be greater than the gas concentration in its central region. By setting the density of the first pores 25 in the transition annular region greater than the density of the first pores 25 in the edge annular region, it is possible to achieve uniform distribution of gas flow in the secondary uniform gas space, thereby making the plasma uniformly distributed on the substrate surface after flowing through the second pores 26. In addition, for side air intake, the flow rate of the gas in the edge annular region is fast, and the flow rate of the gas in the central circular region is slow. When the first pore is opened in the central circular region, due to the slow gas flow rate in the central circular region, the process gas entering from the first air inlet and the process gas entering from the second air inlet will mix in the central circular region, which is easy to form particle deposition. For example, the first process gas introduced into the first gas inlet 141 is NH3 and hydrogen, and the second process gas introduced into the second gas inlet 142 is a mixed gas of HF, helium and hydrogen. By not providing a through hole in the central circular area, the first process gas and the second process gas are mixed in the transition annular area and the edge annular area, and particle deposition can be avoided because the gas flow rate in the transition annular area and the edge annular area is fast.

[0060] In some embodiments, the central circular area and the transition annular area are provided with first pores, and the density of the first pores in the central circular area is less than the density of the first pores in the transition annular area.

[0061] like Figure 2B and 3BAs shown, the edge annular region 23 of the first spray plate is not provided with the first air holes 25. The first air holes 25 are provided in the central circular region, but the density and aperture of the first air holes 25 are much smaller than those of the first air holes in the transition annular region. The first air holes 25 are provided in the central circular region only to allow a small amount of airflow to pass through. If the central circular region of the first spray plate 121 is not provided with the first air holes, then since there is no airflow in the central region, after a period of etching process, the product of the etching process is easily accumulated in the central circular region of the first surface of the first spray plate. The accumulation of the product will cause the heat dissipation of the central circular region to deteriorate, thereby affecting the uniformity of plasma distribution.

[0062] In some embodiments, the edge annular region is also provided with first pores 25, and the density of the first pores in the edge annular region is less than the density of the first pores in the transition annular region.

[0063] like Figure 2C As shown, the first spray plate has first air holes in both the central circular area 21 and the edge annular area, and the density and / or aperture of the first air holes are smaller than the first air holes in the transition annular area. By adjusting the density and aperture of the first air holes in different areas of the first spray plate, the uniformity of gas distribution in the secondary uniform gas space can be improved.

[0064] In some embodiments, Figure 2D and 3C As shown, the first air hole can be opened in the central circular area instead of the first air hole 25 in the transition annular area, thereby increasing the first air hole density and / or aperture in the edge annular area, and improving the uniform distribution of the process gas or plasma in the secondary uniform gas space through the edge air intake of the first spray plate and the edge air intake of the second air inlet.

[0065] In some embodiments, the first pores in the first spray plate located in the central circular area, the transition annular area, and the edge annular area have different apertures. In some embodiments, the aperture of the first pores in the central circular area of ​​the first spray plate is smaller than the aperture of the first pores in the transition annular area. The aperture of the first pores in the transition annular area of ​​the first spray plate is larger than the aperture of the first pores in the edge annular area.

[0066] In some embodiments, the first air holes in the central circular area, transition annular area and edge annular area of ​​the first spray plate are arranged radially. The radial arrangement means that the first air holes in different areas of the first spray plate are arranged along the diameter or radius direction respectively.

[0067] In some embodiments, the first air holes in the central circular area, transition annular area and edge annular area of ​​the first spray plate are arranged circumferentially. The circumferential arrangement means that the first air holes in the first spray plate are distributed along a circular ring concentric with the first spray plate.

[0068] There is no restriction on the specific distribution of the first pores in the central circular area, transition annular area and edge annular area of ​​the first spray plate. Specifically, the distribution of the first pores in the transition annular area and edge annular area may also be provided with dense areas and sparse areas, and the distribution of the dense areas and sparse areas is determined according to the etching rate spectrum. In other words, the first pores in each area of ​​the central circular area, transition annular area and edge annular area of ​​the first spray plate may also be unevenly distributed.

[0069] In some embodiments, the second air holes 26 of the second spray plate have the same apertures, and the spacings between adjacent second air holes are the same. The same spacing means that the distances between any two adjacent second air hole circles are the same.

[0070] In some embodiments, the minimum aperture of the first air hole 25 of the first spray plate is larger than the aperture of the second air hole 26 of the second spray plate, and the first air hole and the second air hole are arranged in a staggered manner. The staggered arrangement means that the opening position of the first air hole is not completely opposite to the opening position of the second air hole, that is, the process gas or plasma cannot flow directly from the first gas inlet through the first air hole and the second air hole to reach the substrate surface.

[0071] In some embodiments, the thickness of the central circular area of ​​the first spray plate is greater than the thickness of the edge annular area. Figure 4 As shown, the thickness of the central circular area of ​​the first spray plate is D, and the thickness of the edge annular area is d, and D>d. In the primary uniform gas space, the pressure of the first process gas or plasma in the central circular area is higher than the pressure in the edge annular area. As the first process gas or plasma passes through the first pores, pressure loss is caused due to friction. Generally speaking, if the aperture of the first pores in the central circular area and the edge annular area is the same, since the thickness D of the central circular area is greater than the thickness d of the edge annular area, the pressure loss of the first pores in the central circular area is greater than the pressure loss of the first pores in the edge annular area. Therefore, the uniformity of gas distribution can be adjusted by adjusting the thickness, aperture and density of the first pores in different areas of the first spray plate.

[0072] In some embodiments, Figure 3AAs shown, the first spray plate 121 has a first surface 321 opposite to the second spray plate, and the second spray plate 122 has a second surface 323 opposite to the first spray plate 121; an annular connecting side wall 36 is provided between the first surface 321 and the second surface 323, and the annular connecting side wall is located at the edge of the first spray plate and the second spray plate; the upper surface of the annular connecting side wall is connected to the first surface, and the lower surface of the annular connecting side wall is connected to the second surface, and the upper surface and the lower surface are connected through an annular inner surface and an annular outer surface; the annular connecting side wall is provided with a third air hole 361, and the third air hole 361 is arranged along the thickness direction of the annular side wall.

[0073] like Figure 3C As shown, the edge of the second spray plate is provided with a mounting protrusion 40 which is higher than the second surface 323; the first spray plate and the annular connecting side wall are integrally formed, and the edge of the first spray plate is provided with an annular extension portion 1211, and the annular extension portion 1211 is connected to the side wall of the mounting protrusion 40; the lower surface of the annular extension portion of the first spray plate, the second surface of the second spray plate, the annular outer surface of the annular connecting side wall and the side wall of the mounting protrusion form a first uniform gas zone 30.

[0074] The mounting protrusion is annular and is integrally formed with the second spray plate. The first gas homogenizing zone 30 is an annular first gas homogenizing zone. The annular center of the first gas homogenizing zone is aligned with the center of the second spray plate.

[0075] The first spray plate is provided with a first spray plate body, the first spray plate body includes a central circular area, a transition annular area and an edge annular area, and the first spray plate body is provided with a first air hole. The edge annular area of ​​the first spray plate is provided with an annular extension 1211, the annular extension 1211 is not provided with an opening, and the annular extension is connected to the mounting protrusion of the second spray plate. The lower surface of the annular extension is provided with an annular connecting side wall, the first spray plate is installed on the second surface 323 of the second spray plate through the annular connecting side wall, and the junction of the annular connecting side wall 36 and the second spray plate is provided with a first sealing structure 39, in other words, the first spray plate is connected to the second spray plate through the annular connecting side wall.

[0076] The second spray plate is provided with a mounting protrusion 40 higher than the second surface 323, and the mounting protrusion is also higher than the third surface 322 of the first spray plate. The second spray plate is connected to the upper cavity cover 14 through the mounting protrusion 40, and a second sealing structure 38 is provided at the connection between the mounting protrusion and the upper cavity cover.

[0077] In some embodiments, the second air inlet 142 is located at the mounting protrusion of the second spray plate, and the second air inlet 142 is connected to the first uniform air zone 30. The third air holes formed on the annular connecting side wall have a high-density area and a low-density area, the low-density area is arranged near the second air inlet area, and the high-density area is arranged away from the second air inlet area.

[0078] like Figure 5 As shown, the mounting protrusion 40 is provided with a second air inlet 142, which is connected to the air inlet duct 19 on the side wall of the chamber, and is used to supply gas to the second air inlet of the gas supply assembly through the air inlet duct 19.

[0079] When the second process gas enters the first uniform gas zone through the second gas inlet 142, the gas flow concentration near the second gas inlet is greater than the gas flow concentration far from the second gas inlet. Therefore, the third gas hole formed on the annular connecting side wall has a high-density area and a low-density area. The low-density area is set in the area close to the second gas inlet, and the high-density area is set in the area far from the second gas inlet. The uniformity of gas intake from the third gas hole can be improved. Further, a plurality of second gas inlets can be set on the mounting protrusion 40 of the second spray plate. Further, the number of the second gas inlets can be 3, and the second gas inlets are evenly distributed on the circumference.

[0080] Further, the opening shape of the third air inlet is not limited, and can be circular, elliptical, square, etc., preferably circular. The aperture of the third air inlet is not limited, and can be larger than or smaller than the second air inlet.

[0081] The thickness of the first gas spray plate and the second gas spray plate ranges from 1 to 50 mm. The distance between the first surface 321 of the first spray plate and the second surface 323 of the second spray plate ranges from 3 to 10 mm.

[0082] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements. In addition, the term "connection" herein means that A and B are directly connected, or that A and B are indirectly connected, such as A and B are connected through C, or even through more components such as C and D, and A and B can be connected in one piece, or in separate pieces, or removable, or fixed. The term "optional" herein means that the technical feature can be combined or not combined with any feature in the text.

[0083] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A gas supply assembly, characterized in that: include: A first spray plate, the first spray plate comprising a central circular area, an edge annular area and a transition annular area between the central circular area and the edge annular area; the first spray plate is provided with first air holes, and the first air holes are arranged along the thickness direction of the first spray plate; at least one of the central circular area, the transition annular area and the edge annular area of ​​the first spray plate is provided with the first air holes; A second spray plate, wherein the second spray plate is provided with second air holes, and the second air holes are arranged along the thickness direction of the second spray plate, and the first spray plate and the second spray plate are stacked up and down; A first air inlet, wherein the first air inlet is located directly above the first spray plate; The second air inlet is located between the first spray plate and the second spray plate, and an air inlet direction of the second air inlet is different from an air inlet direction of the first air inlet.

2. A gas supply assembly according to claim 1, characterized in that: The central circular area, transition annular area and edge annular area of ​​the first spray plate are all provided with first air holes, and the densities of the first air holes in the central circular area, transition annular area and edge annular area are different.

3. A gas supply assembly according to claim 1, characterized in that: The transition annular region and the edge annular region of the first spray plate are provided with first pores, and the density of the first pores in the transition annular region is greater than the density of the first pores in the edge annular region.

4. A gas supply assembly according to claim 1, characterized in that: The central circular area and the transition annular area of ​​the first spray plate are provided with first air holes, and the density of the first air holes in the central circular area is less than the density of the first air holes in the transition annular area.

5. A gas supply assembly according to claim 4, characterized in that: The edge annular region of the first spray plate is also provided with first air holes, and the density of the first air holes in the edge annular region is less than the density of the first air holes in the transition annular region.

6. A gas supply assembly according to claim 1, characterized in that: The first air holes of the first spray plate located in the central circular area, the transition annular area and the edge annular area have different apertures.

7. A gas supply assembly according to claim 6, characterized in that: The aperture of the first air holes of the first spray plate located in the central circular area is smaller than the aperture of the first air holes located in the transition annular area.

8. A gas supply assembly according to claim 7, characterized in that: The aperture of the first pores of the first spray plate located in the transition annular region is larger than the aperture of the first pores located in the edge annular region.

9. A gas supply assembly according to claim 5 or 8, characterized in that: The first air holes in the central circular area, the transition annular area and the edge annular area of ​​the first spray plate are arranged radially.

10. A gas supply assembly according to claim 5 or 8, characterized in that: The first air holes in the central circular area, the transition annular area and the edge annular area of ​​the first spray plate are arranged along the circumferential direction.

11. A gas supply assembly according to claim 1, characterized in that: The second air holes of the second spray plate have the same apertures, and the intervals between adjacent second air holes are the same.

12. A gas supply assembly according to claim 11, characterized in that: The minimum aperture of the first air hole of the first spray plate is greater than the aperture of the second air hole of the second spray plate, and the first air hole and the second air hole are arranged in a staggered manner.

13. A gas supply assembly according to claim 1, characterized in that: The thickness of the central circular area of ​​the first spray plate is greater than the thickness of the edge annular area.

14. A gas supply assembly according to claim 1, characterized in that: The first spray plate has a first surface opposite to the second spray plate, and the second spray plate has a second surface opposite to the first spray plate; an annular connecting side wall is provided between the first surface and the second surface, and the annular connecting side wall is located at the edge of the first spray plate and the second spray plate; The upper surface of the annular connecting side wall is connected to the first surface, and the lower surface of the annular connecting side wall is connected to the second surface; the annular connecting side wall is provided with a third air hole, and the third air hole is arranged along the thickness direction of the annular connecting side wall.

15. A gas supply assembly according to claim 14, characterized in that: The edge of the second spray plate is provided with a mounting protrusion which is higher than the second surface of the second spray plate; the first spray plate and the annular connecting side wall are integrally formed, and the edge of the first spray plate is provided with an annular extension portion, and the annular extension portion is connected to the side wall of the mounting protrusion; the lower surface of the annular extension portion of the first spray plate, the second surface of the second spray plate, the annular connecting side wall and the side wall of the mounting protrusion form a first uniform gas zone.

16. A gas supply assembly according to claim 1, characterized in that: The second air inlet is located at the mounting protrusion of the second spray plate, and the second air inlet is communicated with the first gas homogenizing area.

17. A gas supply assembly according to claim 16, characterized in that: The third air holes formed on the annular connecting side wall have a high-density area and a low-density area, the low-density area is arranged near the second air inlet area, and the high-density area is arranged far away from the second air inlet area.

18. A semiconductor etching device, characterized in that: include, An upper cavity cover, wherein a first air inlet is provided at a central position of the upper cavity cover, and a gas supply assembly as claimed in any one of claims 1 to 17 is fixed to the upper cavity cover, and the gas supply assembly is located directly below the first air inlet; The chamber, the upper chamber cover is located above the chamber, a support base is provided inside the chamber, the gas supply assembly is located directly above the support base, and the center of the gas supply assembly is aligned with the center of the support base.

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