GaN trench switch device and preparation process thereof
By setting the longitudinal structure and n-type GaN layer in the GaN trench switching device, the problems of low power density and low voltage resistance of GaN trench switching are solved, and higher power density and voltage resistance of GaN trench switching are achieved.
Patent Information
- Application Number
- CN202411509817.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-28
- Publication Date
- 2025-02-18
AI Technical Summary
The power density of GaN trench switches is low, resulting in a low voltage resistance.
By setting a longitudinal structure in the GaN trench switching device, including drain metal, GaN structure layer, gate metal layer and source metal layer, the n-type GaN layer uniformly distributes electrons, avoid heat concentration, reduce on-resistance, and improves Power density.
The power density and voltage resistance of GaN trench switching devices are improved, and the on-resistance is reduced by evenly distributing electrons and dispersing heat.
Smart Images
Figure CN119486185A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a GaN trench switch device and a preparation process thereof. Background Art
[0002] GaN trench switches are semiconductor switching devices made of gallium nitride (GaN) materials. Because of their low on-resistance, high output current and large threshold voltage, they are mainly used in high-frequency and high-power applications.
[0003] At present, GaN trench switches are mainly composed of a substrate, a buffer layer, a channel layer, a gate metal, a source metal and a drain metal, and usually control the current to enter the GaN trench switch from the source metal, and then the drain metal outputs the switched current. Common GaN trench switches usually set the gate metal between the source metal and the drain metal to adjust the magnitude of the current flowing through the GaN trench switch through the gate metal. However, the current power density of the GaN trench switch is relatively low, resulting in low voltage resistance of the GaN trench switch.
[0004] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention
[0005] The main purpose of the present application is to provide a GaN trench switch device, aiming to solve the technical problem that the power density of the GaN trench switch is low, resulting in low voltage resistance of the GaN trench switch.
[0006] To achieve the above object, the present application proposes a GaN trench switch device, the GaN trench switch device comprising: a drain metal, a GaN structure layer, a gate metal layer and a source metal layer, the drain metal, the GaN structure layer, the gate metal and the source metal layer forming a vertical structure, the GaN structure layer comprising an n-type GaN layer;
[0007] The drain metal and the gate metal are respectively arranged at two ends of the GaN structure layer, and the source metal layer is arranged on a side of the gate metal away from the drain metal.
[0008] In one embodiment, the GaN structure layer further includes: an n+GaN substrate and an n+GaN layer;
[0009] The n-type GaN layer is disposed between the n+GaN substrate and the n+GaN layer, and the n+GaN substrate is disposed on the drain metal.
[0010] In one embodiment, the n-type thickness of the n-type GaN layer is greater than the n+ thickness of the n+GaN layer and the substrate thickness of the n+GaN substrate;
[0011] The n+ thickness is less than the substrate thickness.
[0012] In one embodiment, the doping concentrations of the n+GaN substrate, the n+GaN layer, and the n-type GaN layer are sequentially set from high to low.
[0013] In one embodiment, the GaN structure layer further includes: an intrinsic GaN layer, an AlGaN layer and an insulating dielectric layer;
[0014] The gate metal layer is arranged at a middle position of the n+GaN layer away from the n-type GaN layer, the insulating dielectric layer is arranged at both ends of the gate metal layer, the AlGaN layer is arranged on the insulating dielectric layer away from the gate metal layer, and the intrinsic GaN is arranged on the AlGaN layer away from the insulating dielectric layer.
[0015] In one embodiment, the gate metal layer is configured as a HEMT structure.
[0016] In addition, to achieve the above-mentioned purpose, the present application also proposes a preparation process of a GaN trench switch device, the process comprising:
[0017] epitaxially growing a GaN structure layer on the drain metal, wherein the GaN structure layer includes an n-type GaN layer;
[0018] Etching a gate metal through hole at a middle recessed position of the GaN structure layer, and depositing a gate metal in the gate metal through hole to obtain a gate metal layer;
[0019] A source metal through hole is etched at a protruding position of the GaN structure layer, and a source metal is deposited in the source metal through hole to obtain a source metal layer.
[0020] In one embodiment, the step of epitaxially growing a GaN structure layer on the drain metal comprises:
[0021] Disposing an n+GaN substrate on the drain metal;
[0022] Growing the n-type GaN layer on the n+GaN substrate at a side away from the drain metal;
[0023] An n+GaN layer is grown on the n-type GaN layer.
[0024] In one embodiment, after the step of growing an n+GaN layer on the n-type GaN layer, the method further includes:
[0025] Etching an intrinsic GaN through hole on the n+GaN layer, and depositing intrinsic GaN in the intrinsic GaN through hole to obtain intrinsic GaN, wherein the middle position of the intrinsic GaN forms a depression;
[0026] An AlGaN through hole is etched on the right-angled edge formed by the inner wall of the recess and the n+GaN layer, and AlGaN is deposited in the AlGaN through hole to obtain an AlGaN layer.
[0027] In one embodiment, after the step of etching an AlGaN through hole on the right angle formed by the inner wall of the recess and the n+GaN layer, and depositing AlGaN in the AlGaN through hole to obtain the AlGaN layer, the step further includes:
[0028] A gate trench is etched on the right-angled edge formed by the AlGaN layer and the n+GaN layer, and an insulating medium is deposited in the gate trench to obtain an insulating medium layer. The insulating metal layer and the n+GaN layer form a middle recess of the GaN structural layer.
[0029] One or more technical solutions proposed in this application have at least the following technical effects:
[0030] By arranging the gate metal layer and the GaN structure layer between the drain metal and the source metal layer, the GaN trench switch device composed of the drain metal, the GaN structure layer, the gate metal layer and the source metal layer forms a vertical structure, so that when the current flows vertically toward the drain through the GaN structure layer, and then the electrons in the current pass through the n-type GaN layer in the GaN structure layer, the n-type GaN layer will evenly distribute the electrons in the GaN structure layer, so that the electrons are evenly distributed in the GaN structure layer laterally, thereby avoiding heat concentration inside the GaN trench switch device, reducing the on-resistance of the GaN trench switch device, thereby improving the power density of the GaN trench switch device, and further improving the voltage resistance of the GaN trench switch. BRIEF DESCRIPTION OF THE DRAWINGS
[0031] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the present application.
[0032] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.
[0033] Figure 1 This is a schematic diagram of the structure of the GaN trench switch device of this application;
[0034] Figure 2 A first flow chart provided for an embodiment of a process for preparing a GaN trench switch device of the present application;
[0035] Figure 3 A second flow diagram provided for an embodiment of a process for preparing a GaN trench switch device of the present application;
[0036] Figure 4 A schematic diagram of the deposition structure of an n-type GaN layer provided for the manufacturing process embodiment of the GaN trench switch device of the present application;
[0037] Figure 5 A schematic diagram of the deposition structure of an n+GaN layer provided for the manufacturing process embodiment of the GaN trench switch device of the present application;
[0038] Figure 6 A third flow chart provided for the manufacturing process embodiment of the GaN trench switch device of the present application;
[0039] Figure 7 A schematic diagram of the deposition structure of intrinsic GaN provided for the manufacturing process embodiment of the GaN trench switch device of the present application;
[0040] Figure 8 A schematic diagram of the AlGaN deposition structure provided for the manufacturing process embodiment of the GaN trench switch device of the present application;
[0041] Fig. 9 A second flow diagram provided for an embodiment of a process for preparing a GaN trench switch device of the present application;
[0042] Fig.10 A schematic diagram of the structure of etching a gate trench provided in an embodiment of the manufacturing process of a GaN trench switch device of the present application;
[0043] Fig.11 A schematic diagram of the deposition structure of the insulating medium provided for the manufacturing process embodiment of the GaN trench switch device of the present application;
[0044] Fig.12 A schematic diagram of a gate metal deposition structure provided for a manufacturing process embodiment of a GaN trench switch device of the present application;
[0045] Fig.13 Schematic diagram of the equipment structure of the hardware operating environment involved in the preparation process of the GaN trench switch device in the embodiment of the present application.
[0046] Description of Figure Numbers:
[0047] Drain metal 10 , n+GaN substrate 11 , n-type GaN layer 12 , n+GaN layer 13 , AlGaN layer 14 , insulating medium 15 , intrinsic GaN 16 , source metal 17 , two-dimensional electron gas 18 , gate metal layer 19 , gate trench 20 , GaN structure layer 100 .
[0048] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION
[0049] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0050] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.
[0051] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.
[0052] Based on this, the embodiment of the present application provides a wide bandgap semiconductor device, referring to Figure 1 , Figure 1 This is a schematic diagram of the structure of the GaN trench switch device of this application.
[0053] In this embodiment, the GaN trench switch device includes: a drain metal 10, a GaN structure layer 100, a gate metal layer 19 and a source metal 17 layer, wherein the drain metal 10, the GaN structure layer 100, the gate metal and the source metal 17 layers form a vertical structure, and the GaN structure layer 100 includes an n-type GaN layer 12;
[0054] The drain metal 10 and the gate metal are respectively disposed at two ends of the GaN structure layer 100 , and the source metal 17 layer is disposed on the side of the gate metal away from the drain metal 10 .
[0055] It should be noted that the drain metal 10 can be a terminal of a semiconductor switching device for outputting current. The GaN structure layer 100 can be composed of various GaN layers, AlGaN and an insulating medium 15 layer. The gate metal layer 19 can be a structure layer composed of a gate metal, wherein the gate metal can be a material for manufacturing a gate for controlling electron emission and movement. The source metal 17 layer can be a structure layer composed of a source metal 17, wherein the source metal 17 can be a terminal as a starting point or end point of the current.
[0056] Among them, the terminal can be an accessory product used to achieve electrical connection.
[0057] In this embodiment, since n-type GaN has the characteristics of a wide bandgap and high electron mobility, it can enable n-type GaN to withstand higher electric field strengths without being prone to breakdown, and allow electrons to move faster in the material. Therefore, providing an n-type GaN layer 12 in the GaN trench switch device can improve the switching speed and efficiency of the device.
[0058] The technical solution of the present application forms a vertical structure for a GaN trench switch device composed of the drain metal 10, the GaN structure layer 100, the gate metal layer 19 and the source metal 17 by arranging the gate metal layer 19 and the GaN structure layer 100 between the drain metal 10 and the source metal 17 layers. When the current flows vertically toward the drain through the GaN structure layer 100, and the electrons in the current pass through the n-type GaN layer 12 in the GaN structure layer 100, the n-type GaN layer 12 will evenly distribute the electrons in the GaN structure layer 100, so that the electrons are evenly distributed in the GaN structure layer 100 laterally, thereby avoiding heat concentration inside the GaN trench switch device, reducing the on-resistance of the GaN trench switch device, and improving the power density of the GaN trench switch device, thereby improving the voltage resistance of the GaN trench switch.
[0059] Furthermore, the GaN structure layer 100 further includes: an n+GaN substrate 11 and an n+GaN layer 13;
[0060] The n-type GaN layer 12 is disposed between the n+GaN substrate 11 and the n+GaN layer 13 , and the n+GaN substrate 11 is disposed on the drain metal 10 .
[0061] It should be noted that the n+GaN substrate 11 is a basic support layer made of GaN (gallium nitride) single crystal material. The n+GaN layer 13 is a layer of highly doped gallium nitride material on the substrate, which is usually used to form a conductive channel or source / drain region of a device.
[0062] In this embodiment, since n+GaN has a higher electron concentration, a stronger electric field can be formed inside the device. Therefore, using n+GaN as a substrate can optimize the electric field distribution inside the GaN trench switch device and further improve the voltage resistance of the GaN trench switch device.
[0063] In this embodiment, by setting the n+GaN layer 13, since the n+GaN layer 13 has a high doping concentration and has a high electron mobility and good thermal conductivity, it can effectively disperse the heat caused by the high current and maintain the stability and reliability of the GaN trench switch device at high temperature.
[0064] In this embodiment, the n-type GaN layer 12 is arranged between the n+GaN layer 13 and the n+GaN substrate 11. The electrons in the current can be first laterally uniformly distributed through the n+GaN layer 13 to avoid accumulation of electrons when passing through the n++GaN layer and the n-type GaN layer 12, thereby reducing the on-resistance of the GaN trench switch device and further improving the voltage resistance of the GaN trench switch device.
[0065] Furthermore, the n-type thickness of the n-type GaN layer 12 is greater than the n+ thickness of the n+GaN layer 13 and the substrate thickness of the n+GaN substrate 11;
[0066] The n+ thickness is less than the substrate thickness.
[0067] It should be noted that the n-type thickness, n+ thickness and substrate thickness are the thicknesses of the n-type GaN layer 12 , the n+ GaN layer 13 and the n+ GaN substrate 11 in the longitudinal direction, respectively.
[0068] In a specific implementation, the substrate thickness of the n+GaN substrate 11 can be set to 500-800nm to ensure the support of the substrate for subsequent processes. The n-type thickness of the n-type GaN layer 12 can be set to 10-30μm according to the device on-resistance and withstand voltage requirements. In order to ensure the current sharing capability of the n+GaN layer 13, the thickness of the n+GaN layer 13 can be set to 200nm.
[0069] Furthermore, the doping concentrations of the n+GaN substrate 11 , the n+GaN layer 13 , and the n-type GaN layer 12 are sequentially set from high to low.
[0070] It should be noted that the doping concentration can be the number of impurity atoms in the semiconductor crystal. These impurity atoms can change the electronic structure of the material by replacing or filling the atoms in the original lattice positions. By precisely controlling the doping concentration, the electrical and optical properties of GaN trench switch devices can be effectively improved, power loss can be reduced, and the breakdown voltage can be increased.
[0071] In this embodiment, in order to form an ohmic contact with the leakage metal, the doping concentration of the n+GaN substrate 11 is required to be the highest, and the doping concentration of the n+GaN layer 13 is the second highest, which must be greater than the doping concentration of the n-type GaN layer 12 to achieve a current equalization effect. The doping concentration of the n-type GaN layer 12 is a compromise between the withstand voltage and the pressure resistance. Therefore, the doping concentration of the n-type GaN layer 12 can be set to the lowest.
[0072] In a specific implementation, the doping concentration of the n+GaN substrate 11 is 6e18cm-3-2e19cm-3, the doping concentration of the n-type GaN layer 12 is 2e15cm-3-5e16cm-3, and the doping concentration of the n+GaN layer 13 is 2e17cm-3-1e18cm-3.
[0073] Furthermore, the GaN structure layer 100 also includes: an intrinsic GaN 16, an AlGaN layer 14 and an insulating medium 15 layer;
[0074] The gate metal layer 19 is arranged at the middle position of the n+GaN layer 13 away from the n-type GaN layer 12, the insulating medium 15 layer is arranged at both ends of the gate metal layer 19, the AlGaN layer 14 is arranged on the side of the insulating medium 15 layer away from the gate metal layer 19, and the intrinsic GaN 16 is arranged on the side of the AlGaN layer 14 away from the insulating medium 15 layer.
[0075] It should be noted that intrinsic GaN 16 can be a gallium nitride material that has not undergone any doping treatment, has a pure crystal structure, has high electron mobility and excellent thermal stability, these characteristics make it an ideal choice for manufacturing high-frequency, high-power electronic devices. AlGaN layer 14 is aluminum gallium nitride (AlGaN) material, composed of a nitride alloy of aluminum (Al) and gallium (Ga). By adjusting the ratio of Al and Ga, its physical properties such as band gap width and electron mobility can be changed. The insulating medium 15 layer is composed of an insulating medium 15, wherein the insulating medium 15 can be used to isolate different regions in the semiconductor material, prevent the disordered flow of current, and ensure that electrons move only in a predetermined path, wherein the insulating medium 15 can be aluminum oxide.
[0076] It can be understood that, according to the characteristics of the insulating medium 15 , disposing the insulating medium 15 layer between the gate metal layer 19 and the AlGaN layer 14 can play a role in controlling the current switch.
[0077] It can be understood that a two-dimensional electron gas 18 can be formed between the intrinsic GaN 16 and the AlGaN layer 14 , and the two-dimensional electron gas 18 forms a two-dimensional electron gas channel between the GaN and AlGaN layers 14 , so that electrons in the current can flow through the two-dimensional electron gas channel in the GaN trench switch device.
[0078] In the specific implementation, the ratio of Al to GaN in AlGaN is between 2:8-4:6, and the corresponding device threshold voltage is 1-4V. It is combined with the thickness of the insulating medium 15 to achieve a device threshold voltage of 3V. Among them, the ratio of Al in AlGaN has nothing to do with the doping concentration of other parts. As the doping ratio of Al in AlGaN increases, the potential well depth formed by the AlGaN layer 14 and the intrinsic GaN 16 becomes deeper, the concentration of the two-dimensional electron gas 18 in the n+GaN layer becomes higher, and the threshold voltage decreases. Among them, the material and thickness of the insulating medium 15 affect the threshold voltage. The insulating medium 15 is generally set to Al2O3 with a thickness of 30nm. Therefore, after matching, the threshold voltage can be controlled to be 3V, and other voltage values can also be set according to needs.
[0079] In a specific implementation, the GaN trench switch device is turned on when a positive voltage (greater than a threshold voltage) is applied to the gate metal, and electrons flow downward from the source metal 17 along the two-dimensional electron gas channel. Since the n+GaN doping concentration is high and the higher the doping concentration, the lower the resistance, after reaching the n+GaN layer, the electrons flow laterally along the n+GaN layer 13 and then flow toward the drain, so that the electrons are laterally distributed inside the GaN trench switch device, thereby reducing the on-resistance of the GaN trench switch device and avoiding heat concentration inside the GaN trench switch device, thereby improving the reliability of the GaN trench switch device. When no voltage is applied to the gate metal of the GaN trench switch device, the large voltage of the drain is distributed longitudinally, and the space charge region diffuses from the n+GaN substrate to the top of the GaN trench switch device, thereby avoiding thermal failure, improving the reliability of the GaN trench switch device, and achieving the voltage resistance performance of the GaN trench switch device.
[0080] Furthermore, the gate metal layer 19 is configured as a HEMT structure.
[0081] It should be noted that the HEMT (High Electron Mobility Transistor) structure can control the density of the two-dimensional electron gas 18 (2DEG) in the channel by adjusting the external gate voltage, thereby achieving control of the drain current.
[0082] It is understandable that the gate metal can adopt the HEMT structure, and the device switching control is achieved by controlling the two-dimensional electron gas 18. Since the two-dimensional electron gas 18 is only controlled by potential energy, the gate charge of all devices is very small, which can effectively improve the switching speed of the device.
[0083] It can be understood that the two-dimensional electron gas 18 is formed due to the potential energy difference between the AlGaN layer 14 and the intrinsic GaN 16 when no voltage is applied to the gate metal layer 19, and conduction is achieved through the two-dimensional electron gas 18. The potential energy is changed by adjusting the proportion of Al in AlGaN and the insulating medium 15. Specifically, the two-dimensional electron gas 18 is not generated under zero bias conditions, and is generated with the assistance of potential difference when a positive voltage is applied to the gate, thereby controlling the presence or absence of two-dimensional electrons and controlling the device switch.
[0084] In this embodiment, for the convenience of description, the following description is made by taking the identification of the crystal growth control platform as the execution subject.
[0085] It should be noted that the execution subject of this embodiment can be a computing service device with data processing, network communication and program running functions, such as a tablet computer, a personal computer, a mobile phone, etc., or an electronic device capable of realizing the above functions, a crystal growth control platform, etc. The following takes the crystal growth control platform as an example to illustrate this embodiment and the following embodiments.
[0086] Based on this, the present application embodiment provides a preparation process of a GaN trench switch device, referring to Figure 2 , Figure 2 A first flow chart is provided for an embodiment of the process for preparing a GaN trench switch device of the present application.
[0087] In this embodiment, the manufacturing process of the GaN trench switch device includes steps S10 to S30:
[0088] Step S10, epitaxially growing a GaN structure layer on the drain metal, wherein the GaN structure layer includes an n-type GaN layer;
[0089] Step S20, etching a gate metal through hole at a middle recessed position of the GaN structure layer, and depositing a gate metal in the gate metal through hole to obtain a gate metal layer;
[0090] Step S30, etching a source metal through hole at the protruding position of the GaN structure layer, and depositing a source metal in the source metal through hole to obtain a source metal layer.
[0091] The present embodiment provides a preparation process of a GaN trench switch device. By arranging the drain metal and the source metal at both ends of the gate metal layer and the GaN structure layer, a longitudinal GaN trench switch device can be formed. By epitaxially growing the GaN structure layer on the drain metal, the characteristics of GaN are utilized to laterally and evenly distribute electrons in the GaN trench switch device, thereby avoiding heat concentration inside the GaN trench switch device and reducing the on-resistance of the GaN trench switch device, thereby increasing the power density of the GaN trench switch device and further increasing the voltage withstand capability of the GaN trench switch, so as to form a longitudinal GaN trench switch device.
[0092] Further, refer to Figure 3 , step S10 includes steps S11 to S13:
[0093] Step S11, disposing an n+GaN substrate on the drain metal;
[0094] Step S12, growing the n-type GaN layer on the n+GaN substrate at a side away from the drain metal;
[0095] Step S13, growing an n+GaN layer on the n-type GaN layer.
[0096] It can be understood that by setting the drain metal on the n+GaN substrate, the electric field distribution inside the GaN trench switch device can be optimized through the n+GaN substrate, so that electrons can flow into the drain metal evenly, avoiding concentrated heat generation and power consumption, and further improving the voltage resistance of the GaN trench switch device.
[0097] In the specific implementation, refer to Figure 4 and Figure 5 , epitaxially grow an n-type GaN layer on an n+GaN substrate containing a drain metal; and epitaxially grow an n+GaN layer on the n-type GaN layer.
[0098] Further, refer to Figure 6 , after step S13, steps S14 to S16 are also included:
[0099] Step S14, etching an intrinsic GaN through hole on the n+GaN layer, and depositing intrinsic GaN in the intrinsic GaN through hole to obtain intrinsic GaN, wherein the middle position of the intrinsic GaN forms a recess;
[0100] Step S15, etching an AlGaN through hole on the right-angled edge formed by the inner wall of the recess and the n+GaN layer, and depositing AlGaN in the AlGaN through hole to obtain an AlGaN layer;
[0101] It can be understood that by depositing the intrinsic GaN and AlGaN layers on the n+GaN layer, the intrinsic GaN and AlGaN layers generate two-dimensional electron gas.
[0102] In the specific implementation, refer to Figure 7 and Figure 8 , deposit a barrier layer on the n+GaN layer, etch intrinsic GaN through holes, and deposit intrinsic GaN; remove the original barrier layer, deposit a barrier layer on the n+GaN layer, etch AlGaN through holes, and deposit AlGaN.
[0103] Further, refer to Fig. 9 , after step 15, further comprising step S16:
[0104] Step S16, etching a gate trench on the right-angled edge formed by the AlGaN layer and the n+GaN layer, and depositing an insulating dielectric in the gate trench to obtain an insulating dielectric layer, and the insulating metal layer and the n+GaN layer form a middle recess of the GaN structural layer.
[0105] It can be understood that by depositing an insulating dielectric on the n+GaN layer, the AlGaN layer can be isolated from the gate metal layer.
[0106] In the specific implementation, refer to Fig.10 and Fig.11 The original barrier layer is removed, a barrier layer is deposited on the n+GaN layer, a gate structure through hole is etched, a gate trench is etched, and an insulating medium is deposited.
[0107] From the specific implementation, refer to Fig.12 and Figure 1 , remove the original barrier layer, deposit a barrier layer on the n+GaN layer, etch the gate metal through hole, and deposit the gate metal; remove the original barrier layer, deposit a barrier layer on the n+GaN layer, etch the source metal through hole, and deposit the source metal.
[0108] It should be noted that the above examples are only used to understand the present application and do not constitute a limitation on the GaN trench switch device of the present application. More simple transformations based on this technical concept are all within the scope of protection of the present application.
[0109] The present application provides a GaN trench switch device manufacturing device, the GaN trench switch device manufacturing device comprises: at least one processor; and a memory connected to the at least one processor in communication; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the GaN trench switch device manufacturing process in the above-mentioned embodiment one.
[0110] Reference below Fig.13, which shows a schematic diagram of a structure of a manufacturing process equipment suitable for implementing the GaN trench switch device of the embodiment of the present application. The manufacturing equipment of the GaN trench switch device in the embodiment of the present application may include but is not limited to mobile terminals such as mobile phones, laptop computers, digital broadcast receivers, PDAs (Personal Digital Assistants), PADs (Portable Application Descriptions), PMPs (Portable Media Players), vehicle terminals (such as vehicle navigation terminals), etc., and fixed terminals such as digital TVs, desktop computers, etc. Fig.13 The manufacturing equipment of the GaN trench switch device shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.
[0111] like Fig.13 As shown, the manufacturing equipment of the GaN trench switch device may include a processing device 1001 (such as a central processing unit, a graphics processor, etc.), which can perform various appropriate actions and processes according to the program stored in the read-only memory (ROM: Read Only Memory) 1002 or the program loaded from the storage device 1003 to the random access memory (RAM: Random Access Memory) 1004. In RAM1004, various programs and data required for the operation of the manufacturing equipment of the GaN trench switch device are also stored. The processing device 1001, ROM1002 and RAM1004 are connected to each other through a bus 1005. The input / output (I / O) interface 1006 is also connected to the bus. Typically, the following systems can be connected to the I / O interface 1006: input devices 1007 including, for example, a touch screen, a touchpad, a keyboard, a mouse, an image sensor, a microphone, an accelerometer, a gyroscope, etc.; output devices 1008 including, for example, a liquid crystal display (LCD: Liquid Crystal Display), a speaker, a vibrator, etc.; storage devices 1003 including, for example, a magnetic tape, a hard disk, etc.; and communication devices 1009. The communication device 1009 can allow the manufacturing equipment of the GaN trench switch device to communicate wirelessly or wired with other devices to exchange data. Although the figure shows the manufacturing equipment of the GaN trench switch device with various systems, it should be understood that it is not required to implement or have all the systems shown. More or fewer systems may be implemented or have instead.
[0112] In particular, according to the embodiments disclosed in the present application, the process described above with reference to the flowchart can be implemented as a computer software program. For example, the embodiments disclosed in the present application include a computer program product, which includes a computer program carried on a computer-readable medium, and the computer program includes a program code for executing the process shown in the flowchart. In such an embodiment, the computer program can be downloaded and installed from the network through a communication device, or installed from the storage device 1003, or installed from the ROM 1002. When the computer program is executed by the processing device 1001, the above-mentioned functions defined in the process of the embodiment disclosed in the present application are executed.
[0113] The manufacturing equipment of the GaN trench switch device provided in the present application adopts the manufacturing process of the GaN trench switch device in the above embodiment, which can solve the technical problem that the power density of the GaN trench switch is low, resulting in low withstand voltage capability of the GaN trench switch. Compared with the prior art, the beneficial effects of the manufacturing equipment of the GaN trench switch device provided in the present application are the same as the beneficial effects of the manufacturing process of the GaN trench switch device provided in the above embodiment, and other technical features in the manufacturing equipment of the GaN trench switch device are the same as the features disclosed in the process of the previous embodiment, which will not be repeated here.
[0114] It should be understood that the various parts disclosed in this application can be implemented by hardware, software, firmware or a combination thereof. In the description of the above embodiments, specific features, structures, materials or characteristics can be combined in any one or more embodiments or examples in a suitable manner.
[0115] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.
[0116] The present application provides a computer-readable storage medium having computer-readable program instructions (ie, computer program) stored thereon, and the computer-readable program instructions are used to execute the preparation process of the GaN trench switch device in the above-mentioned embodiment.
[0117] The computer-readable storage medium provided in the present application may be, for example, a USB flash drive, but is not limited to electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems, systems or devices, or any combination of the above. More specific examples of computer-readable storage media may include, but are not limited to: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM: Random Access Memory), a read-only memory (ROM: Read Only Memory), an erasable programmable read-only memory (EPROM: Erasable Programmable Read Only Memory or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM: CD-Read Only Memory), an optical storage device, a magnetic storage device, or any suitable combination of the above. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in combination with an instruction execution system, system or device. The program code contained on the computer-readable storage medium may be transmitted using any appropriate medium, including but not limited to: wires, optical cables, RF (Radio Frequency: Radio Frequency), etc., or any suitable combination of the above.
[0118] The computer-readable storage medium may be included in the manufacturing equipment of the GaN trench switch device; or may exist independently without being assembled into the manufacturing equipment of the GaN trench switch device.
[0119] The above-mentioned computer-readable storage medium carries one or more programs. When the above-mentioned one or more programs are executed by the preparation equipment of the GaN trench switch device, the preparation equipment of the GaN trench switch device: epitaxially grows a GaN structure layer on the drain metal, and the GaN structure layer includes an n-type GaN layer; etches a gate metal through hole at a middle recessed position of the GaN structure layer, and deposits a gate metal in the gate metal through hole to obtain a gate metal layer; etches a source metal through hole at a protruding position of the GaN structure layer, and deposits a source metal in the source metal through hole to obtain a source metal layer.
[0120] The computer program code for performing the operation of the present application can be written in one or more programming languages or a combination thereof, including object-oriented programming languages, such as Java, Smalltalk, C++, and conventional procedural programming languages, such as "C" language or similar programming languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as an independent software package, partially on the user's computer and partially on the remote computer, or entirely on the remote computer or server. In the case of a remote computer, the remote computer can be connected to the user's computer through any type of network, including a local area network (LAN) or a wide area network (WAN), or can be connected to an external computer (for example, using an Internet service provider to connect through the Internet).
[0121] The flow chart and block diagram in the accompanying drawings illustrate the possible architecture, function and operation of the system, process and computer program product according to various embodiments of the present application. In this regard, each box in the flow chart or block diagram can represent a module, a program segment or a part of a code, and the module, the program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some implementations as replacements, the functions marked in the box can also occur in a sequence different from that marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flow chart, and the combination of the boxes in the block diagram and / or flow chart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.
[0122] The modules involved in the embodiments described in this application may be implemented by software or hardware, wherein the name of the module does not constitute a limitation on the unit itself in some cases.
[0123] The readable storage medium provided in the present application is a computer-readable storage medium, which stores computer-readable program instructions (i.e., computer programs) for executing the above-mentioned preparation process of the GaN trench switch device, and can solve the technical problem that the power density of the GaN trench switch is low, resulting in low withstand voltage capability of the GaN trench switch. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided in the present application are the same as the beneficial effects of the preparation process of the GaN trench switch device provided in the above-mentioned embodiment, and will not be repeated here.
[0124] The present application also provides a computer program product, including a computer program, which implements the steps of the preparation process of the GaN trench switch device as described above when executed by a processor.
[0125] The computer program product provided by the present application can solve the technical problem that the power density of the GaN trench switch is low, resulting in low voltage resistance of the GaN trench switch. Compared with the prior art, the beneficial effects of the computer program product provided by the present application are the same as the beneficial effects of the preparation process of the GaN trench switch device provided by the above embodiment, which will not be described in detail here.
[0126] The above descriptions are only some embodiments of the present application, and are not intended to limit the patent scope of the present application. All equivalent structural changes made using the contents of the present application specification and drawings under the technical concept of the present application, or direct / indirect applications in other related technical fields are included in the patent protection scope of the present application.
Claims
1. A GaN trench switch device, characterized in that: The GaN trench switch device comprises: a drain metal, a GaN structure layer, a gate metal layer and a source metal layer, wherein the drain metal, the GaN structure layer, the gate metal and the source metal layer form a vertical structure, and the GaN structure layer comprises an n-type GaN layer; The drain metal and the gate metal are respectively arranged at two ends of the GaN structure layer, and the source metal layer is arranged on a side of the gate metal away from the drain metal.
2. The GaN trench switch device according to claim 1, characterized in that: The GaN structural layer also includes: an n+GaN substrate and an n+GaN layer; The n-type GaN layer is disposed between the n+GaN substrate and the n+GaN layer, and the n+GaN substrate is disposed on the drain metal.
3. The GaN trench switch device according to claim 2, characterized in that: The n-type thickness of the n-type GaN layer is greater than the n+ thickness of the n+GaN layer and the substrate thickness of the n+GaN substrate; The n+ thickness is less than the substrate thickness.
4. The GaN trench switch device according to claim 2, characterized in that: The doping concentrations of the n+GaN substrate, the n+GaN layer and the n-type GaN layer are set in order from high to low.
5. The GaN trench switch device according to claim 2, characterized in that: The GaN structure layer also includes: intrinsic GaN, AlGaN layer and insulating dielectric layer; The gate metal layer is arranged at a middle position of the n+GaN layer away from the n-type GaN layer, the insulating dielectric layer is arranged at both ends of the gate metal layer, the AlGaN layer is arranged on the insulating dielectric layer away from the gate metal layer, and the intrinsic GaN is arranged on the AlGaN layer away from the insulating dielectric layer.
6. The GaN trench switch device according to claim 1, characterized in that: The gate metal layer is configured as a HEMT structure.
7. A process for preparing a GaN trench switch device, characterized in that: The process comprises: epitaxially growing a GaN structure layer on the drain metal, wherein the GaN structure layer includes an n-type GaN layer; Etching a gate metal through hole at a middle recessed position of the GaN structure layer, and depositing a gate metal in the gate metal through hole to obtain a gate metal layer; A source metal through hole is etched at a protruding position of the GaN structure layer, and a source metal is deposited in the source metal through hole to obtain a source metal layer.
8. The process for preparing a GaN trench switch device according to claim 7, characterized in that: The step of epitaxially growing a GaN structure layer on the drain metal comprises: Disposing an n+GaN substrate on the drain metal; Growing the n-type GaN layer on the n+GaN substrate at a side away from the drain metal; An n+GaN layer is grown on the n-type GaN layer.
9. The process for preparing a GaN trench switch device according to claim 8, characterized in that: After the step of growing an n+GaN layer on the n-type GaN layer, the method further comprises: Etching an intrinsic GaN through hole on the n+GaN layer, and depositing intrinsic GaN in the intrinsic GaN through hole to obtain intrinsic GaN, wherein the middle position of the intrinsic GaN forms a depression; An AlGaN through hole is etched on the right-angled edge formed by the inner wall of the recess and the n+GaN layer, and AlGaN is deposited in the AlGaN through hole to obtain an AlGaN layer.
10. The process for preparing a GaN trench switch device according to claim 9, characterized in that: After the step of etching an AlGaN through hole on the right angle formed by the inner wall of the recess and the n+GaN layer, and depositing AlGaN in the AlGaN through hole to obtain the AlGaN layer, the method further includes: A gate trench is etched on the right-angled edge formed by the AlGaN layer and the n+GaN layer, and an insulating medium is deposited in the gate trench to obtain an insulating medium layer. The insulating metal layer and the n+GaN layer form a middle recess of the GaN structural layer.