Semiconductor laser light source device

Abstract

This semiconductor laser light source device is provided with: a metal base; a conductive first support block provided on the main surface of the metal socket; a temperature control module having an upper surface and a back surface on the opposite side from the upper surface, the back surface being provided on the main surface of the metal socket; a conductive second support block provided on the upper surface of the temperature control module; a first substrate which is provided on a first side surface of the first support block and on which a signal line is formed; a second substrate which is provided on a second side surface of the second support block and on which a signal line is formed; an optical semiconductor chip provided on the second substrate; a conductive cover which is provided on the main surface of the metal socket and covers the first support block, the temperature control module, the second support block, the first substrate, the second substrate, and the optical semiconductor chip; and a metal block provided between the second support block and the cover.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor laser light source device. Background Art

[0002] Patent document 1 discloses a semiconductor light modulator having a metal stem. A first support block and a temperature control module are mounted on the metal stem. A first dielectric substrate is mounted on the side of the first support block. A second support block is mounted on the temperature control module. A semiconductor light modulator is mounted on the second dielectric substrate.

[0003] Patent Document 1: Japanese Patent No. 5188625

[0004] SNS (Social Networking Service), video sharing services, etc. are becoming popular all over the world, and the large-capacity data transmission is accelerating. In order to cope with the high-speed and large-capacity signals in a limited installation space, the optical transceiver is required to be high-speed, miniaturized, and low-cost. As the structure of a semiconductor laser light source device equipped with a semiconductor light modulator, the TO-CAN (Transistor-Outlined CAN) type that can be commercialized inexpensively is generally used. In the TO-CAN type, glass is usually used to seal the pins to the metal stem. This sealing and fixing utilizes the pressure caused by the difference in thermal expansion coefficients of each component. Therefore, in order to ensure high airtightness, the configuration of the pins and the spacing between the pins become important. In addition, the components that constitute the semiconductor laser light source device can basically only be installed on the metal stem. In this way, in the TO-CAN type semiconductor laser light source device, it is necessary to achieve high speed and low cost under many structural restrictions.

[0005] As a semiconductor light modulator, for example, when using EAM-LD (Electroabsorption Modulator-Laser Diode), in order to suppress the degradation of the frequency response characteristics, it is preferable to apply a stable reference potential to the signal line. In this way, the resonance within the frequency band can be suppressed. Here, the semiconductor light modulator causes the oscillation wavelength or light output to change due to heat. In the laser light source device of Patent Document 1, a temperature control module is used to keep the temperature of the semiconductor light modulator constant. In such a structure, the potential of components such as a support block mounted on the temperature control module may sometimes become higher relative to the reference potential. At this time, especially when transmitting signals above 20 Gbps, sometimes a signal is transmitted from a structure with a higher potential than the reference potential to a structure with a lower potential in the space inside the CAN. As a result, it is possible that the frequency response characteristics may be degraded due to resonance. Summary of the invention

[0006] An object of the present disclosure is to obtain a semiconductor laser light source device capable of improving high-frequency characteristics.

[0007] The semiconductor laser light source device involved in the present disclosure comprises: a metal tube seat; a conductive first support block, which is arranged on the main surface of the above-mentioned metal tube seat; a temperature control module, which has an upper surface and a back surface opposite to the above-mentioned upper surface, and the above-mentioned back surface is arranged on the above-mentioned main surface of the above-mentioned metal tube seat; a conductive second support block, which is arranged on the above-mentioned upper surface of the above-mentioned temperature control module; a first substrate, which is arranged on the first side surface of the above-mentioned first support block and has a signal line formed thereon; a second substrate, which is arranged on the second side surface of the above-mentioned second support block and has a signal line formed thereon; an optical semiconductor chip, which is arranged on the above-mentioned second substrate; a conductive cover, which is arranged on the above-mentioned main surface of the above-mentioned metal tube seat and covers the above-mentioned first support block, the above-mentioned temperature control module, the above-mentioned second support block, the above-mentioned first substrate, the above-mentioned second substrate and the above-mentioned optical semiconductor chip; and a metal block, which is arranged between the above-mentioned second support block and the above-mentioned cover.

[0008] In the semiconductor laser light source device according to the present disclosure, the signal emitted from the second support block or the temperature control module to the space can be absorbed by the metal block, thereby suppressing resonance and improving high-frequency characteristics. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a front perspective view of the semiconductor laser light source device according to the first embodiment.

[0010] Figure 2 It is a top view of the semiconductor laser light source device involved in Embodiment 1.

[0011] Figure 3 It is a side view of the semiconductor laser light source device involved in Embodiment 1.

[0012] Figure 4 This is a rear perspective view of the semiconductor laser light source device according to Embodiment 1.

[0013] Figure 5 This is a schematic diagram of the semiconductor laser light source device involved in Embodiment 1.

[0014] Figure 6 It is a graph showing frequency response characteristics of a semiconductor laser light source device according to a comparative example when a cover is provided and when no cover is provided.

[0015] Figure 7 It is a graph showing the frequency response characteristics of the semiconductor laser light source device according to Embodiment 1 and the semiconductor laser light source device according to the comparative example.

[0016] Figure 8It is a graph showing frequency response characteristics of a semiconductor laser light source device according to a modification of Embodiment 1 and a semiconductor laser light source device according to a comparative example.

[0017] Fig. 9 It is a graph showing frequency response characteristics of a semiconductor laser light source device according to a modification of Embodiment 1 and a semiconductor laser light source device according to a comparative example.

[0018] Fig.10 This is a rear perspective view of the semiconductor laser light source device according to the second embodiment.

[0019] Fig.11 It is a top view of the semiconductor laser light source device involved in Embodiment 2.

[0020] Fig.12 It is a side view of the semiconductor laser light source device involved in Embodiment 2.

[0021] Fig.13 It is a diagram showing the frequency response characteristics of the semiconductor laser light source device according to the second embodiment and the semiconductor laser light source device according to the comparative example.

[0022] Fig.14 This is a rear perspective view of the semiconductor laser light source device involved in Embodiment 3.

[0023] Fig.15 It is a top view of the semiconductor laser light source device involved in Embodiment 3.

[0024] Fig.16 It is a side view of the semiconductor laser light source device involved in Embodiment 3.

[0025] Fig.17 It is a diagram showing the frequency response characteristics of the semiconductor laser light source device according to Embodiment 3 and the semiconductor laser light source device according to the comparative example.

[0026] Fig.18 This is a rear perspective view of the semiconductor laser light source device involved in Embodiment 4.

[0027] Fig.19 It is a top view of the semiconductor laser light source device involved in Embodiment 4.

[0028] Fig. 20 It is a side view of the semiconductor laser light source device involved in Embodiment 4.

[0029] Fig.21 It is a diagram showing the frequency response characteristics of the semiconductor laser light source device according to the fourth embodiment and the semiconductor laser light source device according to the comparative example.

[0030] Fig. 22 This is a rear perspective view of the semiconductor laser light source device involved in Embodiment 5.

[0031] Fig.23 It is a top view of the semiconductor laser light source device involved in Embodiment 5.

[0032] Fig.24 It is a side view of the semiconductor laser light source device involved in Embodiment 5.

[0033] Fig.25 It is a diagram showing the frequency response characteristics of the semiconductor laser light source device according to Embodiment 5 and the semiconductor laser light source device according to the comparative example.

[0034] Fig.26 This is a rear perspective view of the semiconductor laser light source device involved in Embodiment 6.

[0035] Fig. 27 It is a diagram showing the frequency response characteristics of the semiconductor laser light source device according to Embodiment 6 and the semiconductor laser light source device according to the comparative example. DETAILED DESCRIPTION

[0036] The semiconductor laser light source device involved in each embodiment is described with reference to the accompanying drawings. The same or corresponding components are marked with the same figure marks, and repeated descriptions are omitted. In the following description, terms such as "upper", "lower", "front", "back", "left", "right", and "side" are sometimes used to indicate specific positions and directions. These terms are used for convenience in order to facilitate understanding of the contents of the embodiments, and do not limit the position and direction during implementation.

[0037] Implementation Method 1

[0038] Figure 1 This is a front perspective view of the semiconductor laser light source device 100 according to the first embodiment. Figure 2 1 is a plan view of the semiconductor laser light source device 100 according to the first embodiment. Figure 3 It is a side view of the semiconductor laser light source device 100 according to the first embodiment. Figure 4 This is a rear perspective view of the semiconductor laser light source device 100 according to the first embodiment. Figure 5 FIG. 1 is a schematic diagram of a semiconductor laser light source device 100 according to Embodiment 1. Figures 1 to 4 The cover 20 is omitted.

[0039] The semiconductor laser light source device 100 includes a metal stem 1. The metal stem 1 is plate-shaped and circular when viewed from above. A plurality of pins 2a to 2e penetrate the metal stem 1 from the main surface 1a to the surface opposite to the main surface 1a. As the material of the metal stem 1 and the pins 2, for example, metals such as copper, iron or stainless steel can be used. The surfaces of the metal stem 1 and the pins 2 can also be plated with gold or nickel.

[0040] For example, glass 3 is filled between the metal stem 1 and the pins 2a to 2e. The pins 2a to 2e are fixed to the metal stem 1 through the glass 3. If the impedance is not matched, the frequency response characteristics will deteriorate due to multiple reflections of the signal, and high-speed modulation will become difficult. Therefore, the glass 3 is preferably formed of a material with a low dielectric constant so as to have the same impedance as the signal generator.

[0041] A temperature control module 5 and a conductive first support block 4 are mounted on the main surface 1a of the metal tube seat 1. The first support block 4 can be made of, for example, metal such as copper, iron or stainless steel. The surface of the first support block 4 can also be plated with gold or nickel. In addition, the first support block 4 can also be integrally formed with the metal tube seat 1. The first support block 4 is, for example, a rectangular parallelepiped. The back side of the first support block 4 on the opposite side to the upper surface 4c is arranged on the main surface 1a of the metal tube seat 1. Among the side surfaces of the first support block 4 connected to the upper surface 4c and the back side, the surface facing the positive direction of the Y axis is the side surface 4a, and the surface facing the negative direction of the Y axis is the back side 4b.

[0042] The temperature control module 5 has an upper surface and a back surface opposite to the upper surface, and the back surface is arranged on the main surface 1a of the metal tube seat 1. The temperature control module 5 has, for example, a lower substrate 5b and an upper substrate 5c formed of AlN or the like, and a plurality of thermoelectric elements 5a sandwiched by the lower substrate 5b and the upper substrate 5c and formed of BiTe or the like. The upper surface of the temperature control module 5 is equivalent to the upper surface of the upper substrate 5c, and the back surface of the temperature control module 5 is equivalent to the back surface of the lower substrate 5b. For example, the main surface 1a of the metal tube seat 1 and the lower substrate 5b are joined by a joining material such as SnAgCu solder or AuSn solder. The lower substrate 5b has a protrusion that protrudes forward than the upper substrate 5c. A metallized portion 5d for supplying power to the thermoelectric element 5a is provided on the protrusion. In addition, the front is Figure 1 The positive direction of the Y axis.

[0043] A conductive second support block 6 is provided on the upper surface of the temperature control module 5. The second support block 6 is formed of, for example, a metal material having an Au plating layer applied to the surface of a metal such as copper, iron or stainless steel. The second support block 6 can also be formed by coating a metal on an insulator such as ceramic or resin. The second support block 6 has, for example, a seat portion 6a provided on the upper surface of the temperature control module 5, and a side wall portion 6b extending upward from the seat portion 6a. The surface of the side wall portion 6b facing the positive direction of the Y axis is the side surface 6c, and the surface facing the negative direction of the Y axis is the back surface 6d. In addition, the upper side is Figure 1 The positive direction of the Z axis.

[0044] A dielectric substrate 7 is mounted on the side surface 4a of the first support block 4. A dielectric substrate 8 is mounted on the side surface 6c of the second support block 6. The dielectric substrates 7 and 8 are formed of a ceramic material such as aluminum nitride. The dielectric substrates 7 and 8 have an electrical insulation function and a heat transfer function.

[0045] The dielectric substrate 7 is provided with a signal line 9 and a ground conductor 10. The signal line 9 is, for example, arranged over mutually orthogonal sides of the front surface of the dielectric substrate 7. In addition, the ground conductor 10 is, for example, formed on the front surface of the dielectric substrate 7 in a state where the interval between the signal line 9 is kept constant. Thus, a coplanar line can be formed. The ground conductor 10 is formed from the front surface to the back surface of the dielectric substrate 7, and is electrically connected to the first support block 4 on the back surface. The ground conductors 10 on the front and back surfaces of the dielectric substrate 7 are electrically connected, for example, via a castellation structure.

[0046] The signal line 11 and the ground conductor 12 are formed on the dielectric substrate 8. The ground conductor 12 is formed on the front surface of the dielectric substrate 8, for example, in a state where the gap between the ground conductor 12 and the signal line 11 is kept constant. The ground conductor 12 is provided from the front surface to the side surface and the back surface of the dielectric substrate 8. The ground conductor 12 on the back surface is joined to the second support block 6 and is electrically connected to the second support block 6.

[0047] A metal block 13 is provided on the back side 4b of the first support block 4. The metal block 13 covers at least a portion of the back side 6d of the second support block 6 on the opposite side to the side 6c. The metal block 13 is separated from the second support block 6. The metal block 13 has a shape that can be connected to the first support block 4 and does not contact the second support block 6. The metal block 13 is, for example, L-shaped or J-shaped when viewed from above. The metal block 13 is formed of a metal material such as copper, iron or stainless steel. The surface of the metal block 13 may also be plated with Au or the like. In addition, the metal block 13 may also be formed by coating a metal on an insulator such as ceramic or resin. The thickness of the portion of the metal block 13 that is opposite to the second support block 6 is, for example, 0.6 mm.

[0048] An optical semiconductor chip 14 is provided on the front surface of the dielectric substrate 8. The optical semiconductor chip 14 is, for example, a semiconductor light modulator. The modulator section of the optical semiconductor chip 14 is composed of a plurality of electric field absorption type light modulators. The optical semiconductor chip 14 is, for example, a modulator integrated laser diode in which an electric field absorption type light modulator using an InGaAsP quantum well absorption layer and a distributed feedback type laser diode are integrated into a single chip. Laser light is radiated from the light emitting point of the optical semiconductor chip 14 along an optical axis that is perpendicular to the chip end face and parallel to the chip main face.

[0049] The light receiving element 15, the temperature sensor 16 and the ceramic block 17 are mounted on the base portion 6a of the second support block 6. As a bonding material for bonding the temperature sensor 16 and the ceramic block 17 to the second support block 6, for example, SnAgCu solder or AuSn solder can be used. The temperature sensor 16 is, for example, a thermistor. The ceramic block 17 is, for example, an AlN substrate having a conductor film on its upper surface. The light receiving element 15 is arranged on the negative Z-axis side of the optical semiconductor chip 14.

[0050] The conductive bonding material 18 connects the pin 2a to one end of the signal line 9. The conductive bonding material 18 is, for example, SnAgCu solder or AuSn solder. The conductive bonding material 18 may also be a conductive lead. The conductive lead 19a connects the other end of the signal line 9 to one end of the signal line 11. The conductive lead 19b connects the other end of the signal line 11 to the EAM electrode of the optical semiconductor chip 14. The conductive lead 19c connects the ground conductor 10 to the ground conductor 12. The conductive lead 19d connects the temperature sensor 16 to the conductor film of the ceramic block 17. The conductive lead 19e connects the conductor film of the ceramic block 17 to the pin 2b. The conductive lead 19f connects the metallization portion 5d of the temperature control module 5 to the pins 2c and 2d. The conductive lead 19g connects the light receiving element 15 to the pin 2e.

[0051] The cover 20 for airtight sealing is bonded to the metal stem 1. The cover 20 is conductive and has a lens 21. The cover 20 is provided on the main surface 1a of the metal stem 1, covers the first support block 4, the temperature control module 5, the second support block 6, the dielectric substrates 7, 8, the optical semiconductor chip 14, the temperature sensor 16, etc., and performs airtight sealing. Thus, the moisture resistance and anti-interference performance of the semiconductor laser light source device 100 can be improved. The lens 21 is formed of glass such as SiO2, for example. The lens 21 converges the laser light emitted from the optical semiconductor chip 14 and makes it incident on the optical fiber.

[0052] If the temperature of the optical semiconductor chip 14 changes, the oscillation wavelength changes. Therefore, it is necessary to keep the temperature of the optical semiconductor chip 14 constant. To this end, when the temperature of the optical semiconductor chip 14 rises, the temperature control module 5 is cooled, and when the temperature of the optical semiconductor chip 14 decreases, the temperature control module 5 generates heat. In this way, the temperature of the optical semiconductor chip 14 can be kept constant. The heat generated in the optical semiconductor chip 14 is transferred to the upper substrate 5c of the temperature control module 5 via the dielectric substrate 8 and the second support block 6. The temperature control module 5 absorbs the heat from the optical semiconductor chip 14. The heat absorbed by the temperature control module 5 is transferred from the lower substrate 5b of the temperature control module 5 via the metal stem 1 to the negative direction of the Z axis, and is dissipated to the lower surface side of the metal stem 1.

[0053] The temperature sensor 16 indirectly measures the temperature of the optical semiconductor chip 14. The temperature sensor 16 feeds back the measured temperature to the temperature control module 5. When the temperature of the optical semiconductor chip 14 is higher than the target value, the temperature control module 5 cools the chip, and when the temperature of the optical semiconductor chip 14 is lower than the target value, the temperature control module 5 generates heat. Thus, the temperature of the optical semiconductor chip 14 can be stabilized.

[0054] The temperature sensor 16 is electrically connected to the pin 2b via the conductor film of the ceramic block 17. If the temperature sensor 16 and the pin 2b are directly connected by a wire, the ambient temperature transmitted from the outside to the metal stem 1 may flow into the temperature sensor 16 through the wire. Therefore, there is a concern that the temperature sensor 16 cannot measure the correct temperature. Therefore, by configuring the ceramic block 17 between the temperature sensor 16 and the pin 2b, the heat flowing into the temperature sensor 16 is reduced, and the temperature sensor 16 can measure the correct temperature.

[0055] The light receiving element 15 performs O / E (Optical / Electronic) conversion of the optical signal into an electrical signal. The electrical signal is transmitted to the pin 2e via the connected conductive lead 19g. By providing the light receiving element 15, the number of pins penetrating the metal stem 1 increases by one, but the intensity of the back light of the optical semiconductor chip 14 can be monitored. By feeding back the monitoring result, the driving current of the optical semiconductor chip 14 can be controlled in such a way that the light output becomes constant.

[0056] The electrical signal input to the pin 2a is applied to the modulator of the optical semiconductor chip 14 via the conductive bonding material 18, the signal line 9, the conductive lead 19a, the signal line 11, and the conductive lead 19b. Since the electrical signal input to the pin 2a is electromagnetically coupled to the metal stem 1, the metal stem 1 functions as an AC ground. When the metal stem 1 functions as an AC ground, the first support block 4 and the cover 20 connected to the metal stem 1 also become AC grounds. Similarly, the ground conductor 10 and the metal block 13 connected to the first support block 4 also become AC grounds. In addition, the ground conductor 10 is connected to the ground conductor 12 via the conductive lead 19c, and the ground conductor 12 is connected to the upper substrate 5c of the temperature control module 5 via the second support block 6. Therefore, the ground conductor 12, the second support block 6, and the temperature control module 5 also function as AC grounds.

[0057] Usually, resonance within the frequency band is suppressed and degradation of the frequency response characteristics is suppressed by applying a reference potential from the metal tube seat 1 to the upper substrate 5c of the temperature control module 5. However, the reference potential actually applied from the metal tube seat 1 to the second support block 6 and the upper substrate 5c of the temperature control module 5 passes through several structures and conductive leads. Therefore, the potential of the second support block 6 and the upper substrate 5c of the temperature control module 5 sometimes becomes higher than the reference potential. At this time, especially in the high-frequency region exceeding 20 GHz, a signal is sometimes emitted from a component with a high potential to a component with a low potential in the space within the package. Specifically, it is possible that a signal is emitted from the second support block 6 or the upper substrate 5c of the temperature control module 5 toward the metal tube seat 1, the first support block 4 directly connected to the metal tube seat 1, or the cover 20. As a result, there is a concern that resonance will occur and broadbandization will be limited.

[0058] In contrast, in the first embodiment, the metal block 13 is provided between the second support block 6 and the cover 20. The metal block 13 can shield and absorb the signal emitted from the second support block 6 and the upper substrate 5c of the temperature control module 5 to the space. Therefore, the resonance can be suppressed or the frequency of the resonance can be changed. Therefore, the high-frequency characteristics can be improved.

[0059] In particular, in this embodiment, the metal block 13 is disposed near the second support block 6 and the upper substrate 5c of the temperature control module 5, and is connected to the first support block 4 whose potential is infinitely close to the reference potential. Thus, the metal block 13 can effectively shield and absorb the signal emitted from the second support block 6 and the upper substrate 5c of the temperature control module 5 to the space.

[0060] In addition, when viewed from a direction perpendicular to the side surface 6c of the second support block 6, the metal block 13 protrudes from the side of the second support block 6 opposite to the first support block 4. Thus, the metal block 13 can cover a large area of ​​the back surface 6d of the second support block 6, and can greatly ensure an area that can absorb signals. Therefore, the effect of resonance suppression can be improved. In addition, even if the metal block 13 is configured not to protrude relative to the second support block 6 in the positive direction of the X-axis, the effect of resonance suppression can be obtained.

[0061] Figure 6 2 is a graph showing frequency response characteristics of a semiconductor laser light source device according to a comparative example with a cover 20 and without the cover 20. Here, the semiconductor laser light source device according to the comparative example differs from the semiconductor laser light source device 100 of the present embodiment in that the metal block 13 is not provided. Figure 6 The data is based on the data of the three-dimensional electromagnetic field simulation. In the case where the cover 20 is excluded as shown by the solid line 81, it can be seen that the significant decrease in gain disappears compared to the case where the cover 20 is installed as shown by the dotted line 80. In other words, it can be seen that the decrease in gain is caused by the resonance with the cover 20.

[0062] Figure 7 1 is a diagram showing frequency response characteristics of the semiconductor laser light source device 100 according to the first embodiment and a semiconductor laser light source device according to a comparative example. Figure 8 , Fig. 9 It is a graph showing frequency response characteristics of a semiconductor laser light source device according to a modification of Embodiment 1 and a semiconductor laser light source device according to a comparative example. Figure 7 to Figure 9 The data is also based on three-dimensional electromagnetic field simulation data. Figure 7 In FIG. 8 , the solid line 82 represents the characteristics of the present embodiment, and the dotted line 80 represents the characteristics of the comparative example. Figure 7 , the simulation results are shown in which the length of the metal block 13 in the X-axis direction is made longer than the length of the second support block 6 in the X-axis direction, and the area of ​​the back surface 6d of the second support block 6 covered by the metal block 13 is increased as much as possible. In this embodiment, it can be confirmed that the significant decrease in gain at 24 GHz and 37 GHz in the comparative example disappears.

[0063] Figure 8 The solid line 83 shows the simulation result when the metal block 13 is made shorter in the X-axis direction than in the present embodiment. Specifically, the area covered by the metal block 13 in the back surface 6d of the second support block 6 is set to 50% of that in the present embodiment. Fig. 9 The solid line 84 shows the simulation result when the area covered by the metal block 13 in the back surface 6d of the second support block 6 is set to 10% of that in the present embodiment. Figure 8 , Fig. 9In any of the modifications shown, the significant drop in gain at 37 GHz disappears. That is, it is found that even when a portion of the back surface 6 d of the second support block 6 is exposed from the metal block 13 , the resonance suppression effect can be obtained.

[0064] In addition, the metal block 13 and the second support block 6 may be in contact. In this case, the frequency response characteristics can also be improved. In this case, the heat from the outside that flows into the metal stem 1 may flow into the second support block 6 via the first support block 4 and the metal block 13. Therefore, the heat is also transferred to the optical semiconductor chip 14 and the temperature sensor 16, and the temperature control by the temperature control module 5 may become difficult. Therefore, it is preferred that the metal block 13 and the second support block 6 do not contact.

[0065] In addition, the pin 2a connected to the signal line 9 has an inner pin portion protruding from the upper surface of the metal stem 1. The shorter the length of the inner pin portion, the less the inductance component, and the less the loss caused by the reflection of the signal in the inner pin portion. Therefore, the passband can be ensured to be wide. In addition, in order to obtain the maximum voltage amplitude from the signal generator, a matching resistor can also be provided on the front surface of the dielectric substrate 8 and connected in parallel with the optical semiconductor chip 14. In addition, the metal block 13 can also be integrally formed with the first support block 4.

[0066] The above-mentioned modifications can be appropriately applied to the semiconductor laser light source devices according to the following embodiments. In addition, since the semiconductor laser light source devices according to the following embodiments have many common points with the first embodiment, the description will be centered on the differences from the first embodiment.

[0067] Implementation Method 2

[0068] Fig.10 This is a rear perspective view of a semiconductor laser light source device 200 according to the second embodiment. Fig.11 It is a top view of a semiconductor laser light source device 200 according to the second embodiment. Fig.12 1 is a side view of a semiconductor laser light source device 200 according to Embodiment 2. This embodiment is different from Embodiment 1 in that a metal plate 213 is provided instead of the metal block 13. The other structures are the same as those of Embodiment 1.

[0069] The metal plate 213 includes: a first portion 213a, which covers at least a portion of the back side 6d of the second support block 6; and a second portion 213b, which is bent from the first portion 213a and covers at least a portion of the base portion 6a. The cross section of the metal plate 213 when viewed from the X-axis direction is, for example, L-shaped. The metal plate 213 is thinner than the metal block 13. The thickness of the first portion 213a and the second portion 213b of the metal plate 213 is, for example, 0.05 mm. The thickness of the first portion 213a and the second portion 213b of the metal plate 213 is preferably 0.2 mm or less. As in Embodiment 1, the metal plate 213 is provided on the back side 4b of the first support block 4 and is separated from the second support block 6.

[0070] Fig.13 2 is a graph showing the frequency response characteristics of the semiconductor laser light source device 200 according to Embodiment 2 and the semiconductor laser light source device according to the comparative example. The semiconductor laser light source device according to the comparative example is different from the semiconductor laser light source device 200 according to the present embodiment in that the metal plate 213 is not provided. Fig.13 In the simulation results shown, it can be confirmed that the significant decrease in gain at 24 GHz and 37 GHz in the characteristic of the comparative example shown by the dotted line 80 disappears in the characteristic of the present embodiment shown by the solid line 85. Thus, in the present embodiment, the high frequency characteristic can also be improved.

[0071] In addition, the metal plate 213 of this embodiment is smaller than the metal block 13 of Embodiment 1. Therefore, the cost can be suppressed.

[0072] Implementation 3

[0073] Fig.14 This is a rear perspective view of a semiconductor laser light source device 300 according to the third embodiment. Fig.15 1 is a plan view of a semiconductor laser light source device 300 according to the third embodiment. Fig.16 3 is a side view of a semiconductor laser light source device 300 according to Embodiment 3. This embodiment is different from Embodiment 1 in that a metal plate 313 is provided instead of the metal block 13. The other structures are the same as those of Embodiment 1.

[0074] The cross section of the metal plate 313 when viewed from the X-axis direction is, for example, an I-shape. The metal plate 313 is thinner than the metal block 13. The thickness of the portion of the metal plate 313 facing the second support block 6 is, for example, 0.05 mm. As in the first embodiment, the metal plate 313 is provided on the back surface 4 b of the first support block 4 and is separated from the second support block 6.

[0075] Fig.173 is a graph showing the frequency response characteristics of the semiconductor laser light source device 300 according to Embodiment 3 and the semiconductor laser light source device according to the comparative example. The semiconductor laser light source device according to the comparative example is different from the semiconductor laser light source device 300 according to the present embodiment in that the metal plate 313 is not provided. Fig.17 In the simulation results shown, it can be confirmed that the significant decrease in gain at 24 GHz and 37 GHz in the characteristic of the comparative example shown by the dotted line 80 disappears in the characteristic of the present embodiment shown by the solid line 86. Thus, in the present embodiment, the high frequency characteristic can also be improved.

[0076] In addition, the metal plate 313 is smaller than the metal plate 213 in the second embodiment. Therefore, the cost can be further suppressed. In addition, the metal plate 313 occupies a smaller space inside the semiconductor laser light source device 300 than the metal block 13 and the metal plate 213. Therefore, the metal plate 313 is not easy to interfere with other components, and the assembly performance can be improved. When the thickness of the portion of the metal plate 313 that is opposite to the second support block 6 is less than 0.2 mm, it is particularly possible to prevent interference between components from occurring.

[0077] In Embodiments 2 and 3, similarly to Embodiment 1, even if the metal plates 213 and 313 are configured not to protrude in the positive direction of the X-axis relative to the second support block 6, the resonance suppression effect can be obtained. In addition, the greater the distance between the second support block 6 and the metal plate 313, the closer the positional relationship between the second support block 6 and the metal plate 313 is to the positional relationship between the second support block 6 and the cover 20 involved in the comparative example. Therefore, the metal plate 313 is preferably as close to the second support block 6 as possible.

[0078] Implementation 4

[0079] Fig.18 This is a rear perspective view of a semiconductor laser light source device 400 according to the fourth embodiment. Fig.19 1 is a plan view of a semiconductor laser light source device 400 according to a fourth embodiment. Fig. 20 4 is a side view of a semiconductor laser light source device 400 according to Embodiment 4. This embodiment is different from Embodiment 1 in that a metal block 413 is provided instead of the metal block 13. The other structures are the same as those of Embodiment 1.

[0080] The metal block 413 is connected to the upper surface 4c of the first support block 4. The metal block 413 extends from the first support block 4 to the top of the second support block 6. Fig.19As shown, the metal block 413 is configured so as not to block the laser from the optical semiconductor chip 14. That is, the metal block 413 is configured to avoid being directly above the optical semiconductor chip 14. In addition, in order to absorb more signals emitted from the second support block 6, the metal block 413 is preferably as large as possible within a range that does not block the laser.

[0081] Fig.21 4 is a graph showing the frequency response characteristics of the semiconductor laser light source device 400 according to the fourth embodiment and the semiconductor laser light source device according to the comparative example. The semiconductor laser light source device according to the comparative example is different from the semiconductor laser light source device 400 according to the present embodiment in that the metal block 413 is not provided. Fig.21 In the simulation results shown, it can be confirmed that the significant decrease in gain at 24 GHz in the characteristics of the comparative example shown by the dotted line 80 disappears in the characteristics of the present embodiment shown by the solid line 87. In addition, in the present embodiment, it can be confirmed that the decrease in gain at 37 GHz in the characteristics of the comparative example does not disappear, but the decrease is reduced. In this way, in the present embodiment, resonance can also be suppressed and high-frequency characteristics can be improved.

[0082] Implementation method 5

[0083] Fig. 22 This is a rear perspective view of a semiconductor laser light source device 500 according to the fifth embodiment. Fig.23 1 is a plan view of a semiconductor laser light source device 500 according to the fifth embodiment. Fig.24 1 is a side view of a semiconductor laser light source device 500 according to Embodiment 5. In this embodiment, the difference from Embodiment 1 is that a metal block 513 is provided instead of the metal block 13. The other structures are the same as those of Embodiment 1. The metal block 513 is provided on the back surface 6d of the second support block 6. The metal block 513 covers at least a portion of the back surface 4b of the first support block 4. The metal block 513 is separated from the first support block 4.

[0084] Fig.25 1 is a graph showing the frequency response characteristics of the semiconductor laser light source device 500 according to Embodiment 5 and the semiconductor laser light source device according to the comparative example. The semiconductor laser light source device according to the comparative example is different from the semiconductor laser light source device 500 according to the present embodiment in that the metal block 513 is not provided. Fig.25 In the simulation results shown, it can be confirmed that the significant drop in gain at 37 GHz in the characteristic of the comparative example shown by the dotted line 80 disappears in the characteristic of the present embodiment shown by the solid line 88. Thus, in the present embodiment, the high frequency characteristic can also be improved.

[0085] In the present embodiment, the distance between the second support block 6 and the cover 20, which causes the resonance, can be considered to be changed by the metal block 513. Therefore, similarly to the first embodiment, the effect of suppressing the resonance can be obtained.

[0086] In addition, the metal block 513 is opposite to the back surface 4b of the first support block 4. Thus, the distance between the second support block 6 and the metal block 513 and the first support block 4 close to the reference potential can be shortened. The signal emitted from the second support block 6 to the space is attracted to the reference potential. Therefore, according to the configuration of this embodiment, the first support block 4 can easily absorb the signal emitted from the second support block 6. That is, the signal emitted from the second support block 6 to the cover 20 can be reduced, and resonance can be suppressed.

[0087] In addition, the air between the metal block 513 or the second support block as the signal source and the grounded first support block 4 can be considered to constitute a capacitor. Therefore, by making the metal block 513 and the first support block 4 as close as possible, the capacitance component that causes resonance can be reduced.

[0088] Implementation 6

[0089] Fig.26 1 is a rear perspective view of a semiconductor laser light source device 600 according to Embodiment 6. In this embodiment, the difference from Embodiment 1 is that a metal block 613 is provided instead of the metal block 13. The other structures are the same as those of Embodiment 1. The metal block 613 is provided on the main surface 1a of the metal stem 1. The metal block 613 is provided on the side opposite to the first support block 4 with respect to the second support block 6. The metal block 613 is separated from the second support block 6.

[0090] Fig. 27 6 is a graph showing the frequency response characteristics of the semiconductor laser light source device 600 according to Embodiment 6 and the semiconductor laser light source device according to the comparative example. The semiconductor laser light source device according to the comparative example is different from the semiconductor laser light source device 600 according to the present embodiment in that the metal block 613 is not provided. Fig. 27 In the simulation results shown, in the characteristics of the present embodiment shown by the solid line 89, the decrease in gain at 24 GHz and 37 GHz in the characteristics of the comparative example shown by the dotted line 80 moves to the high-frequency band side. That is, in the present embodiment, it can be confirmed that the frequency response characteristics are broadbanded. In this way, in the present embodiment, it is also possible to suppress resonance and improve high-frequency characteristics.

[0091] The arrangement and shape of the metal blocks shown in Embodiments 1 to 6 are examples and are not limiting. Signals are emitted in all directions from the second support block 6. Therefore, the effect of suppressing resonance can be obtained regardless of the direction in which the metal block is arranged for the second support block 6.

[0092] The technical features described in each embodiment may be used in combination as appropriate.

[0093] Description of Reference Numerals

[0094] 1...Metallic stem; 1a...Main surface; 2...Pin; 2a-2e...Pin; 3...Glass; 4...First support block; 4a...Side; 4b...Back; 4c...Upper surface; 5...Temperature control module; 5a...Thermoelectric element; 5b...Lower substrate; 5c...Upper substrate; 5d...Metalized portion; 6...Second support block; 6a...Pedestal portion; 6b...Side wall portion; 6c...Side; 6d...Back; 7...Dielectric substrate; 8...Dielectric substrate; 9...Signal line; 10...Ground conductor; 11...Signal line; 12...Ground conductor; 13...Metal block; 14...Optical semiconductor chip; 15...light receiving element; 16...temperature sensor; 17...ceramic block; 18...conductive bonding material; 19a~19g...conductive leads; 20...cover; 21...lens; 100...semiconductor laser light source device; 200...semiconductor laser light source device; 213...metal plate; 213a...first part; 213b...second part; 300...semiconductor laser light source device; 313...metal plate; 400...semiconductor laser light source device; 413...metal block; 500...semiconductor laser light source device; 513...metal block; 600...semiconductor laser light source device; 613...metal block.

Claims

1. A semiconductor laser light source device, characterized in that: have: Metal pipe socket; A conductive first support block is disposed on the main surface of the metal tube seat; A temperature control module having an upper surface and a back surface opposite to the upper surface, wherein the back surface is arranged on the main surface of the metal tube seat; A conductive second support block, disposed on the upper surface of the temperature control module; A first substrate, disposed on a first side surface of the first supporting block and formed with a signal circuit; A second substrate, disposed on a second side surface of the second supporting block and formed with a signal circuit; an optical semiconductor chip, disposed on the second substrate; a conductive cover, disposed on the main surface of the metal stem, and covering the first support block, the temperature control module, the second support block, the first substrate, the second substrate, and the optical semiconductor chip; as well as A metal block is disposed between the second supporting block and the cover.

2. The semiconductor laser light source device according to claim 1, characterized in that: The metal block is disposed on the first supporting block.

3. The semiconductor laser light source device according to claim 2, characterized in that: The metal block is separated from the second supporting block.

4. The semiconductor laser light source device according to claim 2 or 3, characterized in that: The metal block covers at least a portion of a second back surface of the second supporting block opposite to the second side surface.

5. The semiconductor laser light source device according to claim 4, characterized in that: The metal block protrudes from a side of the second supporting block opposite to the first supporting block when viewed from a direction perpendicular to the second side surface of the second supporting block.

6. The semiconductor laser light source device according to claim 4 or 5, characterized in that: The second support block includes: a seat portion provided on the upper surface of the temperature control module; and a side wall portion extending upward from the seat portion and including the second side surface and the second back surface. The metal block has: a first portion covering at least a portion of the second back surface of the second support block; and a second portion bent from the first portion and covering at least a portion of the seat portion.

7. The semiconductor laser light source device according to any one of claims 4 to 6, characterized in that: The metal block is a metal plate having a thickness of 0.2 mm or less.

8. The semiconductor laser light source device according to claim 2 or 3, characterized in that: The metal block extends from the first support block to directly above the second support block.

9. The semiconductor laser light source device according to claim 1, characterized in that: The metal block is disposed on the second supporting block.

10. The semiconductor laser light source device according to claim 9, characterized in that: The metal block is provided on a second back surface of the second supporting block opposite to the second side surface.

11. The semiconductor laser light source device according to claim 10, characterized in that: The metal block covers at least a portion of a first back surface of the first supporting block opposite to the first side surface.

12. The semiconductor laser light source device according to any one of claims 9 to 11, characterized in that: The metal block is separated from the first supporting block.

13. The semiconductor laser light source device according to claim 1, characterized in that: The metal block is arranged on the main surface of the metal stem.

14. The semiconductor laser light source device according to claim 13, characterized in that: The metal block is disposed on a side of the second supporting block opposite to the first supporting block.

15. The semiconductor laser light source device according to claim 13 or 14, characterized in that: The metal block is separated from the second supporting block.

16. The semiconductor laser light source device according to any one of claims 1 to 15, characterized in that: A ground conductor electrically connected to the first support block is provided on the first substrate. The second substrate is provided with a ground conductor electrically connected to the second support block.

17. The semiconductor laser light source device according to any one of claims 1 to 16, characterized in that: have: A pin penetrates the metal stem from the main surface to the surface opposite to the main surface; a ceramic block, disposed on the second supporting block and having a conductor film; and The temperature sensor is disposed on the second supporting block and is electrically connected to the lead pin via the ceramic block.

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