Crystal growth device with sacrificial structure

Abstract

The embodiment of the invention provides a crystal growth device with a sacrificial structure, and relates to the technical field of silicon carbide crystal growth. The crystal growing device comprises a crucible, a temperature adjusting cavity, a heating device and a sacrificial structure. Wherein the crucible comprises a crucible body, a crucible cover and a seed crystal, the crucible cover and the crucible body jointly define a crystal growth cavity, and the seed crystal is arranged on the inner side wall of the crucible cover and located in the crystal growth cavity. The temperature adjusting cavity covers the crucible cover, and a temperature adjusting cavity is defined by the temperature adjusting cavity and the crucible cover. The heating device is arranged on the periphery of the crucible body and the temperature adjusting cavity and used for heating the crucible body and the temperature adjusting cavity. The sacrifice structure is arranged on the outer side wall of the crucible cover and located in the temperature adjusting cavity, and the sacrifice structure is used for sublimating under the heating condition of the heating device so as to adjust the temperature gradient in the crystal growth cavity. The crystal growth device can improve the crystal growth efficiency and quality.

Description

Technical Field

[0001] The invention relates to the technical field of silicon carbide crystal growth, and in particular to a crystal growth device with a sacrificial structure. Background Art

[0002] At present, the main methods for growing silicon carbide crystals include physical vapor transport method (PVT method), liquid phase method, etc. Among them, the PVT method is a relatively mature method suitable for industrial mass production. The so-called PVT method refers to placing a silicon carbide seed crystal on the top of a crucible and placing silicon carbide powder as a raw material at the bottom of the crucible. In a closed environment of high temperature and low pressure, the silicon carbide powder sublimates and is transferred upward to the vicinity of the seed crystal under the action of a temperature gradient, and then recrystallizes after reaching a supersaturated state.

[0003] For silicon carbide crystal growth devices, temperature gradient is a key factor affecting the crystal growth rate and quality. However, in the related art, the temperature gradient regulation effect in the silicon carbide crystal growth device is poor, resulting in low crystal growth efficiency and low quality of the grown crystal. Summary of the invention

[0004] The object of the present invention includes providing a crystal growth device with a sacrificial structure, which can improve the crystal growth efficiency and quality.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a crystal growth device with a sacrificial structure, comprising a crucible, a temperature regulating chamber, a heating device and a sacrificial structure.

[0007] The crucible includes a crucible body, a crucible cover and a seed crystal. The crucible cover is detachably connected to the top of the crucible body. The crucible cover and the crucible body together form a crystal growth chamber for accommodating crystal growth raw materials. The seed crystal is arranged on the inner side wall of the crucible cover and is located in the crystal growth chamber.

[0008] The temperature regulating cavity is covered outside the crucible cover and together with the crucible cover form a temperature regulating cavity.

[0009] The heating device is arranged on the periphery of the crucible body and the temperature regulating cavity, and is used for heating the crucible body and the temperature regulating cavity.

[0010] The sacrificial structure is arranged on the outer side wall of the crucible cover and is located in the temperature regulating chamber. The sacrificial structure is used to sublime when heated by the heating device so as to adjust the temperature gradient in the crystal growth chamber.

[0011] Further, in an optional embodiment, the projection of the sacrificial structure on the inner sidewall surrounds the projection of the seed crystal on the inner sidewall.

[0012] Further, in an optional embodiment, the sacrificial structure is a layered structure formed by pressing carbon powder and silicon carbide powder.

[0013] Further, in an optional embodiment, in the sacrificial structure, the silicon content in a portion where the projection on the inner side wall coincides with the projection on the inner side wall of the concave part of the crystal to be improved grown on the seed crystal, is greater than the silicon content in a portion where the projection on the inner side wall coincides with the projection on the inner side wall of the convex part of the crystal to be improved grown on the seed crystal.

[0014] Further, in an optional embodiment, the sacrificial structure includes a first sacrificial block and a second sacrificial block;

[0015] The second sacrificial block is arranged around the outer periphery of the first sacrificial block, and the projection of the seed crystal on the inner side wall is located within the projection range of the second sacrificial block on the inner side wall;

[0016] The first sacrificial block and the second sacrificial block are both made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the second sacrificial block is greater than the silicon content in the first sacrificial block.

[0017] Further, in an optional embodiment, the sacrificial structure includes a third sacrificial block, a fourth sacrificial block and a fifth sacrificial block;

[0018] The fourth sacrificial block is arranged around the outer periphery of the third sacrificial block, the fifth sacrificial block is arranged around the outer periphery of the fourth sacrificial block, and the projection of the seed crystal on the inner side wall is located within the projection range of the fifth sacrificial block on the inner side wall;

[0019] The third sacrificial block, the fourth sacrificial block and the fifth sacrificial block are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the third sacrificial block and the silicon content in the fifth sacrificial block are both less than the silicon content in the fourth sacrificial block.

[0020] Further, in an optional embodiment, the sacrificial structure includes a sixth sacrificial block, a seventh sacrificial block and an eighth sacrificial block;

[0021] The seventh sacrificial block is arranged around the outer periphery of the sixth sacrificial block, the eighth sacrificial block is arranged around the outer periphery of the seventh sacrificial block, and the projection of the seed crystal on the inner side wall is located within the projection range of the eighth sacrificial block on the inner side wall;

[0022] The sixth sacrificial block, the seventh sacrificial block and the eighth sacrificial block are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the sixth sacrificial block, the silicon content in the seventh sacrificial block and the silicon content in the eighth sacrificial block decreases in sequence.

[0023] Furthermore, in an optional embodiment, a receiving groove is provided on the outer side wall of the crucible cover, and the sacrificial structure is at least partially embedded in the receiving groove.

[0024] Further, in an optional embodiment, the sacrificial structure is a layered structure formed by pressing carbon powder and silicon carbide powder, and the sacrificial structure is installed in the receiving groove after being pressed;

[0025] Alternatively, the sacrificial structure is a layered structure formed by pressing the carbon powder and silicon carbide powder filled in the receiving groove.

[0026] Further, in an optional embodiment, the temperature regulating chamber includes a first sleeve and a regulating chamber cover;

[0027] The first sleeve cover is arranged outside the crucible cover, the regulating chamber cover is detachably connected to the top of the first sleeve, and the first sleeve, the crucible cover and the regulating chamber cover together form the temperature regulating chamber.

[0028] Further, in an optional embodiment, a second sleeve is also included;

[0029] The second sleeve is sleeved outside the crucible body, and the top of the second sleeve is connected to the bottom of the first sleeve.

[0030] Furthermore, in an optional embodiment, it also includes graphite soft felt;

[0031] The regulating chamber cover is provided with a plurality of air holes, and the graphite soft felt is laid on a side of the regulating chamber cover away from the temperature regulating chamber and covers the plurality of air holes.

[0032] The beneficial effects of the crystal growth device with a sacrificial structure provided by the embodiment of the present invention include:

[0033] The crystal growth device with a sacrificial structure provided by the embodiment of the present invention, when growing silicon carbide crystals, places the crystal growth raw materials of silicon carbide in the crystal growth chamber, heats the crucible body and the temperature adjustment chamber by a heating device, and the crystal growth raw materials of silicon carbide sublime, and are transferred upward to the vicinity of the seed crystal for recrystallization under the action of the temperature gradient. During the growth of silicon carbide crystals, the sacrificial structure is heated to a preset temperature and sublimated by the heating device, and since sublimation absorbs heat, the heat conduction through the crucible cover realizes the adjustment of the temperature gradient in the crystal growth chamber, and the temperature adjustment of the seed crystal growth interface is more direct and significant, thereby maintaining the temperature of the seed crystal growth interface, and improving the crystal growth efficiency and quality.

[0034] Furthermore, the specific structure and component ratio of the sacrificial structure can be adjusted accordingly according to the convexity of the crystal to be improved, so as to maintain the temperature of the seed crystal growth interface and regulate the convexity of the crystal, thereby further improving the quality of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0036] Figure 1 A schematic structural diagram of a crystal growth device with a sacrificial structure provided by an embodiment of the present invention;

[0037] Figure 2 for Figure 1 A schematic diagram of the structure of the crucible cover;

[0038] Figure 3 A schematic diagram of the growth structure of an "over-convex" type crystal to be improved obtained after the first crystal growth using a crystal growth device without a sacrificial structure;

[0039] Figure 4 A schematic diagram of the local structure of a crystal growth device with a sacrificial structure at a first sacrificial structure provided in an optional embodiment of the present invention;

[0040] Figure 5 A schematic diagram of the local structure of a crystal growth device with a sacrificial structure provided in an optional embodiment of the present invention at the first sacrificial structure after crystal growth; wherein the shape of the crystal micro-convexity and the shape of the sacrificial structure after sublimation are shown;

[0041] Figure 6A schematic diagram of the growth structure of a "W"-shaped crystal to be improved obtained after the first crystal growth using a crystal growth device without a sacrificial structure;

[0042] Figure 7 A schematic diagram of the local structure of a crystal growth device with a sacrificial structure at a second sacrificial structure provided in an optional embodiment of the present invention;

[0043] Figure 8 A schematic diagram of the local structure of a second sacrificial structure of a crystal growth device with a sacrificial structure provided in an optional embodiment of the present invention after crystal growth; wherein the shape of the crystal micro-convexity and the shape of the sacrificial structure after sublimation are shown;

[0044] Fig. 9 A schematic diagram of the growth structure of a "concave" crystal to be improved obtained after the first crystal growth using a crystal growth device without a sacrificial structure;

[0045] Fig.10 A schematic diagram of the partial structure of a crystal growth device with a sacrificial structure at a third sacrificial structure provided in an optional embodiment of the present invention;

[0046] Fig.11 A schematic diagram of the local structure of a crystal growth device with a sacrificial structure provided in an optional embodiment of the present invention at a third sacrificial structure after crystal growth; wherein the shape of the crystal micro-convexity and the shape of the sacrificial structure after sublimation are shown.

[0047] icon:

[0048] 10-crystal growth device with sacrificial structure; 12-crystal growth raw material; 14-crystal; 16-crystal to be improved;

[0049] 100-crucible; 110-crucible body; 120-crucible cover; 121-inner wall; 122-outer wall; 123-accommodating groove; 130-seed crystal; 140-crystal growth chamber;

[0050] 200 - temperature regulating cavity; 210 - temperature regulating cavity; 220 - first sleeve; 230 - regulating cavity cover; 231 - air vent;

[0051] 300-heating device;

[0052] 400-sacrificial structure; 410-first sacrificial block; 420-second sacrificial block; 430-third sacrificial block; 440-fourth sacrificial block; 450-fifth sacrificial block; 460-sixth sacrificial block; 470-seventh sacrificial block; 480-eighth sacrificial block;

[0053] 500 - second sleeve;

[0054] 600 - Graphite soft felt. DETAILED DESCRIPTION

[0055] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0056] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0057] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0058] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear to indicate an orientation or position relationship, they are based on the orientation or position relationship shown in the accompanying drawings, or are the orientation or position relationship in which the product of the invention is usually placed when used. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0059] In addition, the terms “first”, “second”, etc., if used, are merely used to distinguish between the descriptions and should not be understood as indicating or implying relative importance.

[0060] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0061] See also Figure 1 An embodiment of the present invention provides a crystal growth device 10 with a sacrificial structure, which can be applied to the growth of a crystal 14, such as the growth of a silicon carbide crystal 14. The crystal growth device 10 with a sacrificial structure can effectively improve the growth efficiency and quality of the crystal 14.

[0062] See also Figure 1 and Figure 2The crystal growth device 10 with a sacrificial structure includes a crucible 100, a temperature regulating chamber 200, a heating device 300 and a sacrificial structure 400. The crucible 100 includes a crucible body 110, a crucible cover 120 and a seed crystal 130. The crucible cover 120 is detachably connected to the top of the crucible body 110, and the crucible cover 120 and the crucible body 110 together form a crystal growth chamber 140 for accommodating a crystal growth raw material 12, and the seed crystal 130 is arranged on the inner side wall 121 of the crucible cover 120 and is located in the crystal growth chamber 140. The temperature regulating chamber 200 is covered outside the crucible cover 120, and together with the crucible cover 120, it forms a temperature regulating chamber 210. The heating device 300 is arranged on the periphery of the crucible body 110 and the temperature regulating chamber 200, and is used to heat the crucible body 110 and the temperature regulating chamber 200. The sacrificial structure 400 is disposed on the outer wall 122 of the crucible cover 120 and is located in the temperature adjustment chamber 210 . The sacrificial structure 400 is used to sublime when heated by the heating device 300 to adjust the temperature gradient in the crystal growth chamber 140 .

[0063] The crystal growth device 10 with a sacrificial structure provided in the embodiment of the present invention, when growing a silicon carbide crystal 14, places a silicon carbide crystal growth raw material 12 in a crystal growth chamber 140, heats the crucible body 110 and the temperature adjustment chamber 200 by a heating device 300, and the crystal growth raw material 12 sublimates and is transferred upward to the vicinity of the seed crystal 130 for recrystallization under the action of the temperature gradient. During the growth of the crystal 14, the sacrificial structure 400 is heated to a preset temperature and sublimated by the heating device 300. Since the sublimation absorbs heat, the heat conduction through the crucible cover 120 is realized to adjust the temperature gradient in the crystal growth chamber 140, and the temperature adjustment of the growth interface of the seed crystal 130 is more direct and significant, thereby maintaining the temperature of the growth interface of the seed crystal 130, and improving the growth efficiency and quality of the crystal 14.

[0064] It should be noted that the crucible cover 120 can be optionally connected to the top of the crucible body 110 by threads to facilitate disassembly and assembly. In the present embodiment, the crucible cover 120 is made of graphite. The crucible cover 120 has an inner side wall 121 and an outer side wall 122 that are arranged opposite to each other. Optionally, the inner side wall 121 and the outer side wall 122 are arranged in parallel. The inner side wall 121 is used to enclose a crystal growth chamber 140 together with the crucible body 110, and the seed crystal 130 is bonded to the inner side wall 121 of the crucible cover 120. Of course, in some embodiments, a seed crystal holder can be provided on the inner side wall 121 of the crucible cover 120, and the seed crystal 130 can be bonded to the seed crystal holder. In addition, the outer wall 122 of the crucible cover 120 and the temperature regulating chamber 200 together form a temperature regulating chamber 210, and the outer wall 122 is used to set a sacrificial structure 400 so that the sacrificial structure 400 can better perform heat conduction when sublimating and absorbing heat, thereby adjusting the temperature gradient in the crystal growth chamber 140.

[0065] In this embodiment, the sacrificial structure 400 is a layered structure formed by pressing carbon powder and silicon carbide powder. As an example, in each embodiment of the present invention, the sacrificial structure 400 is a layered structure as a whole.

[0066] The sacrificial structure 400 utilizes the principle that the sublimation temperature of silicon is lower than that of carbon. By adjusting the carbon-silicon ratio, the sublimation speed at different positions can be regulated, and the sacrificial speed and shape of the sacrificial structure 400 can be adjusted to achieve a suitable radial temperature gradient and the growth interface temperature of the seed crystal 130. For example, a component with a higher silicon content is used for a sacrificial location that requires faster sublimation, and a component with a higher carbon content is used for a sacrificial location that requires slower sublimation. During the growth of the silicon carbide crystal 14, the sacrificial structure 400 sublimates and becomes thinner, while the sublimation absorbs heat, thereby maintaining the temperature of the growth interface and adjusting the temperature gradient.

[0067] In addition, it should be noted that the sacrificial structure 400 can be selected as a circular layered structure. When the sacrificial structure 400 is set, the content of the carbon-silicon component can be set as required along its radial direction, so that the radial temperature gradient can be adjusted while adjusting the axial temperature gradient in the crystal growth chamber 140. In this way, after the crystal growth raw material 12 is sublimated, it can be more quickly transferred to the seed crystal 130 under the action of the axial temperature gradient and the radial temperature gradient, thereby improving the efficiency and quality of the crystal 14 growth.

[0068] In addition, the projection of the sacrificial structure 400 on the inner sidewall 121 surrounds the projection of the seed crystal 130 on the inner sidewall 121. That is to say, in an optional embodiment, the location of the sacrificial structure 400 on the outer sidewall 122 corresponds to the location of the seed crystal 130 on the inner sidewall 121. The axis of the sacrificial structure 400 roughly coincides with the axis of the seed crystal 130, and the diameter of the sacrificial structure 400 is greater than or equal to the diameter of the seed crystal 130. In this way, the axial temperature gradient can be effectively adjusted, and the radial temperature gradient can also be well adjusted, so that the crystal growth raw material 12 is more quickly transferred to the seed crystal 130 after sublimation, further improving the efficiency and quality of the growth of the crystal 14. In addition, the sacrificial structure 400 can adjust the temperature of the entire growth interface to improve the adjustment effect.

[0069] In addition, since the sacrificial structure 400 is formed by pressing carbon powder and silicon carbide powder, the material is easy to obtain and the cost is low. Waste generated during the growth of the silicon carbide crystal 14 can also be used, further reducing the cost.

[0070] Also, see Figure 3 to Figure 11 In an optional embodiment, in the sacrificial structure 400, the silicon content in a portion where the projection on the inner wall 121 coincides with the projection on the inner wall 121 of the concave portion of the crystal 14 grown on the seed crystal 130 is greater than the silicon content in a portion where the projection on the inner wall 121 coincides with the projection on the inner wall 121 of the convex portion of the crystal 14 grown on the seed crystal 130.

[0071] It should be noted that after the first growth using a crystal growth device without a sacrificial structure, a crystal to be improved 16 is obtained. The crystal to be improved 16 may have different shapes. On the end face of the crystal to be improved 16 away from the seed crystal 130, some parts are concave and some parts are convex. The "concave" and "convex" referred to here refer to the surface shape of the end of the crystal to be improved 16 away from the seed crystal 130, wherein the part closer to the seed crystal 130 can be considered "concave", and the part farther from the seed crystal 130 can be considered "convex". The concave part on the crystal 16 to be improved can be considered as a part with a relatively higher temperature during the growth of the crystal 16 to be improved, and its growth rate is slower. If the temperature is adjusted, the temperature corresponding to the concave part on the crystal 16 to be improved needs to be lowered faster during the subsequent growth of the crystal 14; the convex part on the crystal 16 to be improved can be considered as a part with a relatively lower temperature during the growth of the crystal 16 to be improved, and its growth rate is faster. If the temperature is adjusted, the temperature of the crystal 14 corresponding to the convex part on the crystal 16 to be improved needs to be higher than the temperature of the concave part during the subsequent growth of the crystal 14. Therefore, in order to improve the temperature of the growth interface and the convexity of the crystal 16 to be improved during the growth of the above-mentioned crystal 16 to be improved, the crystal growth device 10 with a sacrificial structure provided in the embodiment of the present invention can be used, and the sacrificial structure 400 is added for adjustment, and a new crystal 14 is grown on the new seed crystal 130, thereby improving the growth efficiency and quality of the crystal 14.

[0072] In the process of growing the crystal 14 using the crystal growth device 10 with a sacrificial structure provided by the embodiment of the present invention, the shape of the sacrificial structure 400 can be set accordingly according to the shape of the crystal 16 to be improved. For example, if the concave portion of the crystal 16 to be improved needs to lower the temperature faster, the portion corresponding to the concave portion of the crystal 16 to be improved on the added sacrificial structure 400 can be set with a carbon-silicon ratio with a faster sublimation speed, that is, the portion where the projection on the inner side wall 121 overlaps with the projection on the inner side wall 121 of the concave portion of the crystal 16 to be improved grown on the seed crystal 130 has a greater silicon content, which can make the sublimation speed faster and the sublimation absorb heat faster, thereby reducing the temperature of the crystal 14 corresponding to the concave portion and increasing the growth speed of the crystal 14 corresponding to the concave portion. Similarly, the crystal 14 grown on the new seed crystal 130 corresponds to the convex part on the crystal 16 to be improved, which needs to have a higher temperature than the concave part. In this case, the part on the sacrificial structure 400 corresponding to the convex part can be set with a carbon-silicon ratio with a slower sublimation rate. That is to say, the silicon content of the part where the projection on the inner wall 121 overlaps with the projection on the inner wall 121 of the convex part of the crystal 16 to be improved grown on the seed crystal 130 is smaller. This can make the sublimation rate slower and the sublimation heat absorption slower, so that the temperature of the crystal 14 corresponding to the convex part is higher than the temperature of the concave part, thereby reducing the growth rate of the crystal 14 corresponding to the convex part.

[0073] In simple terms, in a plane perpendicular to the inner sidewall 121, the end of the crystal 16 to be improved away from the seed crystal 130 is concave, and the corresponding part of the sacrificial structure 400 needs to sublimate faster, so the corresponding part of the sacrificial structure 400 has a higher silicon content; the end of the crystal 16 to be improved away from the seed crystal 130 is convex, and the corresponding part of the sacrificial structure 400 needs to sublimate slower, so the corresponding part of the sacrificial structure 400 has a lower silicon content. By setting it in this way, the radial temperature gradient and the growth interface temperature of the seed crystal 130 can be effectively adjusted, thereby maintaining the temperature of the growth interface and regulating the convexity of the crystal 14, so that the end of the crystal 14 obtained after the subsequent growth of the crystal 14 away from the seed crystal 130 is adjusted to be slightly convex or more flat, thereby improving the quality of the crystal 14.

[0074] In order to better adjust the radial temperature gradient and control the convexity of the crystal 14 , in an optional embodiment of the present invention, different shapes of the sacrificial structure 400 are designed to adapt to different shapes of the crystal 16 to be improved.

[0075] See also Figure 3 to Figure 5, the first case: after the first growth of the crystal 16 to be improved, the crucible cover 120 is opened, and it can be seen that the convex part on the surface of the end of the crystal 16 to be improved away from the seed crystal 130 is located in the middle area, the concave part is located in the peripheral area, and the height difference between the convex part and the concave part is too large, then this crystal 16 to be improved can be considered as an "over-convex" type crystal 16 to be improved, and its longitudinal section is roughly U-shaped. For this "over-convex" type crystal 16 to be improved, when the crystal 14 is subsequently grown, the following corresponding sacrificial structure 400 can be set:

[0076] The sacrificial structure 400 includes a first sacrificial block 410 and a second sacrificial block 420. The first sacrificial block 410 and the second sacrificial block 420 are both disposed on the outer side wall 122. The second sacrificial block 420 is disposed around the outer periphery of the first sacrificial block 410, and the projection of the seed crystal 130 on the inner side wall 121 is located within the projection range of the second sacrificial block 420 on the inner side wall 121. The first sacrificial block 410 and the second sacrificial block 420 are both made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the second sacrificial block 420 is greater than the silicon content in the first sacrificial block 410.

[0077] It should be noted that the first sacrificial block 410 is roughly circular, and its axis is roughly coincident with the axis of the seed crystal 130. The second sacrificial block 420 is annular and is arranged around the outer periphery of the first sacrificial block 410, wherein the inner peripheral wall of the second sacrificial block 420 is in contact with the outer peripheral wall of the first sacrificial block 410. In addition, the projection of the seed crystal 130 on the inner side wall 121 is located within the projection range of the second sacrificial block 420 on the inner side wall 121, which means that the projection of the seed crystal 130 on the inner side wall 121 is located between the projection of the inner peripheral wall and the outer peripheral wall of the second sacrificial block 420 on the inner side wall 121, that is, the diameter of the seed crystal 130 is smaller than the outer diameter of the second sacrificial block 420, and larger than the inner diameter of the second sacrificial block 420. In addition, when viewed from a plane perpendicular to the inner side wall 121, the first sacrificial block 410 corresponds to the convex portion of the middle area on the crystal 16 to be improved, and the second sacrificial block 420 corresponds to the concave portion of the outer peripheral area on the crystal 16 to be improved. In this way, the first sacrificial block 410 and the second sacrificial block 420 can adjust the temperature of the entire growth interface and the convexity of the crystal 14, thereby improving the adjustment effect.

[0078] In addition, it should be noted that the first sacrificial block 410 and the second sacrificial block 420 are both made of at least one of carbon powder and silicon carbide powder, wherein the first sacrificial block 410 can be made of only carbon powder, or only silicon carbide powder, or both carbon powder and silicon carbide powder, and the second sacrificial block 420 is at least made of silicon carbide powder, which may contain carbon powder or may not contain carbon powder, as long as the silicon content in the second sacrificial block 420 is greater than the silicon content in the first sacrificial block 410.

[0079] As an example, in an optional embodiment, the mass proportion of silicon carbide powder in the first sacrificial block 410 is 0% to 30%, wherein if the mass proportion of silicon carbide powder in the first sacrificial block 410 is 0%, it can be considered that the first sacrificial block 410 contains only carbon powder and no silicon carbide powder. If the mass proportion of silicon carbide powder in the first sacrificial block 410 is 30%, it can be considered that the mass proportion of silicon carbide powder in the first sacrificial block 410 is 30%, and the mass proportion of carbon powder is 70%. If the mass proportion of silicon carbide powder in the second sacrificial block 420 is greater than 30% and less than or equal to 70%, the second sacrificial block 420 contains both silicon carbide powder and carbon powder.

[0080] By setting the first sacrificial block 410 and the second sacrificial block 420, when the crystal 14 is subsequently grown, the first sacrificial block 410 has a smaller silicon content and a slower sublimation speed, which can correspondingly adjust the temperature of the convex part of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the part of the crystal 14 corresponding to the convex part of the crystal 16 to be improved is relatively slowed down; similarly, the second sacrificial block 420 has a larger silicon content and a faster sublimation speed, which can correspondingly adjust the temperature of the concave part of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the part of the crystal 14 corresponding to the concave part of the crystal 16 to be improved is relatively accelerated, so that the end of the grown crystal 14 away from the seed crystal 130 is adjusted to be slightly convex or flatter, thereby improving the quality of the crystal 14.

[0081] See also Figure 6 to Figure 8 , the second case: after the crystal 16 to be improved is grown, the crucible cover 120 is opened, and it can be seen that the surface of the end of the crystal 16 to be improved away from the seed crystal 130 has an inner convex part, an annular inner concave part, and an outer convex part from the inside to the outside. This crystal 16 to be improved can be considered to be a "W"-shaped crystal 16 to be improved, and its longitudinal section is roughly in an inverted W shape. For this "W"-shaped crystal 16 to be improved, when the crystal 14 is subsequently grown, the following corresponding sacrificial structure 400 can be set:

[0082] The sacrificial structure 400 includes a third sacrificial block 430, a fourth sacrificial block 440 and a fifth sacrificial block 450. The third sacrificial block 430, the fourth sacrificial block 440 and the fifth sacrificial block 450 are all arranged on the outer side wall 122. The fourth sacrificial block 440 is arranged around the outer periphery of the third sacrificial block 430, and the fifth sacrificial block 450 is arranged around the outer periphery of the fourth sacrificial block 440. The projection of the seed crystal 130 on the inner side wall 121 is located within the projection range of the fifth sacrificial block 450 on the inner side wall 121. The third sacrificial block 430, the fourth sacrificial block 440 and the fifth sacrificial block 450 are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the third sacrificial block 430 and the silicon content in the fifth sacrificial block 450 are both less than the silicon content in the fourth sacrificial block 440.

[0083] It should be noted that the third sacrificial block 430 is roughly circular, and its axis roughly coincides with the axis of the seed crystal 130. The fourth sacrificial block 440 and the fifth sacrificial block 450 are both annular, and their axis roughly coincides with the axis of the third sacrificial block 430. The fourth sacrificial block 440 is arranged around the periphery of the third sacrificial block 430, and the inner peripheral wall of the fourth sacrificial block 440 is in contact with the outer peripheral wall of the third sacrificial block 430. The fifth sacrificial block 450 is arranged around the periphery of the fourth sacrificial block 440, and the inner peripheral wall of the fifth sacrificial block 450 is in contact with the outer peripheral wall of the fourth sacrificial block 440. The projection of the seed crystal 130 on the inner side wall 121 is located within the projection range of the fifth sacrificial block 450 on the inner side wall 121, which means that the projection of the seed crystal 130 on the inner side wall 121 is located between the projections of the inner peripheral wall and the outer peripheral wall of the fifth sacrificial block 450 on the inner side wall 121, that is, the diameter of the seed crystal 130 is smaller than the outer diameter of the fifth sacrificial block 450, and larger than the inner diameter of the fifth sacrificial block 450. In addition, when viewed from a plane perpendicular to the inner side wall 121, the third sacrificial block 430 corresponds to the convex portion of the inner periphery of the middle region of the crystal 16 to be improved, the fourth sacrificial block 440 corresponds to the concave portion of the middle region of the crystal 16 to be improved, and the fifth sacrificial block 450 corresponds to the convex portion of the outer periphery of the crystal 16 to be improved. In this way, the third sacrificial block 430, the fourth sacrificial block 440 and the fifth sacrificial block 450 can adjust the temperature of the entire growth interface and the convexity of the crystal 14, thereby improving the adjustment effect.

[0084] In addition, it should be noted that the third sacrificial block 430, the fourth sacrificial block 440 and the fifth sacrificial block 450 are all made of at least one of carbon powder and silicon carbide powder, wherein the third sacrificial block 430 and the fifth sacrificial block 450 can only use carbon powder, or only use silicon carbide powder, or both carbon powder and silicon carbide powder, and the fourth sacrificial block 440 is at least made of silicon carbide powder, which may contain carbon powder or may not contain carbon powder, as long as the silicon content in the third sacrificial block 430 and the silicon content in the fifth sacrificial block 450 are both less than the silicon content in the fourth sacrificial block 440. In addition, the silicon content in the third sacrificial block 430 and the fifth sacrificial block 450 can be the same or different, and can be set accordingly according to the convexity of the inner circumference of the crystal 16 to be improved and the convexity of the outer circumference.

[0085] As an example, in an optional embodiment, the silicon content in the third sacrificial block 430 and the fifth sacrificial block 450 is the same, for example, the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 0% to 30%, wherein if the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 0%, it can be considered that the third sacrificial block 430 and the fifth sacrificial block 450 only contain carbon powder. If the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 30%, it can be considered that the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 30%, and the mass proportion of carbon powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 70%. If the mass proportion of silicon carbide powder in the fourth sacrificial block 440 is greater than 30% and less than or equal to 70%, the fourth sacrificial block 440 contains both silicon carbide powder and carbon powder.

[0086] By setting the third sacrificial block 430, the fourth sacrificial block 440 and the fifth sacrificial block 450, when the crystal 14 is subsequently grown, the third sacrificial block 430 and the fifth sacrificial block 450 have a smaller silicon content and a slower sublimation speed than the fourth sacrificial block 440, and can correspondingly adjust the temperature of the convex parts of the inner and outer peripheries of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the crystal 14 at the convex part of the crystal 14 corresponding to the crystal 16 to be improved is relatively slowed down; similarly, the fourth sacrificial block 440 has a larger silicon content and a faster sublimation speed, and can correspondingly adjust the temperature of the concave part of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the part of the crystal 14 corresponding to the concave part of the crystal 16 to be improved is relatively accelerated, so that the end of the grown crystal 14 away from the seed crystal 130 is adjusted to be slightly convex or flatter, thereby improving the quality of the crystal 14.

[0087] See also Figures 9 to 11, the third case: after the crystal 16 to be improved is grown, the crucible cover 120 is opened, and it can be seen that the surface of the end of the crystal 16 to be improved away from the seed crystal 130 forms a concave part in the central area, a concave part in the middle, and a convex part on the periphery from the inside to the outside, wherein the concave part in the central area is more concave than the concave part in the middle, and it can be considered that the crystal 16 to be improved is a "concave" type crystal 16 to be improved, and its longitudinal section is roughly inverted U-shaped. For this "concave" type crystal 16 to be improved, when the crystal 14 is subsequently grown, the following corresponding sacrificial structure 400 can be set:

[0088] The sacrificial structure 400 includes a sixth sacrificial block 460, a seventh sacrificial block 470 and an eighth sacrificial block 480. The sixth sacrificial block 460, the seventh sacrificial block 470 and the eighth sacrificial block 480 are all arranged on the outer side wall 122. The seventh sacrificial block 470 is arranged around the outer periphery of the sixth sacrificial block 460, and the eighth sacrificial block 480 is arranged around the outer periphery of the seventh sacrificial block 470. The projection of the seed crystal 130 on the inner side wall 121 is located within the projection range of the eighth sacrificial block 480 on the inner side wall 121. The sixth sacrificial block 460, the seventh sacrificial block 470 and the eighth sacrificial block 480 are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the sixth sacrificial block 460, the silicon content in the seventh sacrificial block 470 and the silicon content in the eighth sacrificial block 480 decrease in sequence.

[0089] It should be noted that the sixth sacrificial block 460 is roughly circular, and its axis is roughly coincident with the axis of the seed crystal 130. The seventh sacrificial block 470 and the eighth sacrificial block 480 are both annular, the seventh sacrificial block 470 is arranged around the outer periphery of the sixth sacrificial block 460, and the inner peripheral wall of the seventh sacrificial block 470 is in contact with the outer peripheral wall of the sixth sacrificial block 460, and the eighth sacrificial block 480 is arranged around the outer periphery of the seventh sacrificial block 470, and the inner peripheral wall of the eighth sacrificial block 480 is in contact with the outer peripheral wall of the seventh sacrificial block 470. The projection of the seed crystal 130 on the inner side wall 121 is located within the projection range of the eighth sacrificial block 480 on the inner side wall 121, which means that the projection of the seed crystal 130 on the inner side wall 121 is located between the projection of the inner peripheral wall and the outer peripheral wall of the eighth sacrificial block 480 on the inner side wall 121, that is, the diameter of the seed crystal 130 is smaller than the outer diameter of the eighth sacrificial block 480, and larger than the inner diameter of the eighth sacrificial block 480. In addition, when viewed from a plane perpendicular to the inner side wall 121, the sixth sacrificial block 460 corresponds to the concave portion of the middle region of the crystal 16 to be improved, the seventh sacrificial block 470 corresponds to the convex portion of the inner periphery of the crystal 16 to be improved, and the eighth sacrificial block 480 corresponds to the convex portion of the outer periphery of the crystal 16 to be improved. In this way, the sixth sacrificial block 460, the seventh sacrificial block 470 and the eighth sacrificial block 480 can adjust the temperature of the entire growth interface and the convexity of the crystal 14, thereby improving the adjustment effect.

[0090] In addition, it should be noted that the sixth sacrificial block 460, the seventh sacrificial block 470 and the eighth sacrificial block 480 are all made of at least one of carbon powder and silicon carbide powder, wherein the sixth sacrificial block 460 can only use silicon carbide powder, or contain both carbon powder and silicon carbide powder, and the seventh sacrificial block 470 is made of carbon powder and silicon carbide powder, and the eighth sacrificial block 480 can only use carbon powder, or only use silicon carbide powder, or contain both carbon powder and silicon carbide powder. It is sufficient to ensure that the silicon content in the sixth sacrificial block 460, the silicon content in the seventh sacrificial block 470 and the silicon content in the eighth sacrificial block 480 decreases in sequence.

[0091] As an example, in an optional embodiment, the mass proportion of silicon carbide powder in the sixth sacrificial block 460 is 70% to 100%, wherein if the mass proportion of silicon carbide powder in the sixth sacrificial block 460 is 70%, it can be considered that the silicon carbide powder in the sixth sacrificial block 460 accounts for 70% and the carbon powder accounts for 30%; if the mass proportion of silicon carbide powder in the sixth sacrificial block 460 is 100%, it can be considered that the sixth sacrificial block 460 only contains silicon carbide powder and does not contain carbon powder. The mass proportion of silicon carbide powder and carbon powder in the seventh sacrificial block 470 is greater than 30% and less than or equal to 70%. The mass proportion of silicon carbide powder in the eighth sacrificial block 480 is 0% to 30%, wherein if the mass proportion of silicon carbide powder in the eighth sacrificial block 480 is 0%, it can be considered that the eighth sacrificial block 480 only contains carbon powder and does not contain silicon carbide powder. If the mass proportion of silicon carbide powder in the eighth sacrificial block 480 is 30%, it can be considered that the mass proportion of silicon carbide powder in the eighth sacrificial block 480 is 30%, and the mass proportion of carbon powder is 70%.

[0092] By setting the sixth sacrificial block 460, the seventh sacrificial block 470 and the eighth sacrificial block 480, when the crystal 14 is subsequently grown, the silicon content in the sixth sacrificial block 460, the seventh sacrificial block 470 and the eighth sacrificial block 480 gradually decreases, wherein the sixth sacrificial block 460 has a larger silicon content and a faster sublimation speed, and can correspondingly adjust the temperature of the concave portion of the central region of the crystal 16 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth speed of the portion of the crystal 14 corresponding to the concave portion of the central region of the crystal 16 to be improved is relatively accelerated. Similarly, the seventh sacrificial block 470 has a medium silicon content, and although the sublimation speed is not as fast as that of the sixth sacrificial block 460, it is still faster than the sublimation speed of the eighth sacrificial block 480, and can correspondingly adjust the temperature of the concave portion of the middle of the crystal 16 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth speed of the portion of the crystal 14 corresponding to the concave portion of the middle of the crystal 16 to be improved is relatively accelerated. Similarly, the eighth sacrificial block 480 has a smaller silicon content and a slower sublimation speed, and can correspondingly adjust the temperature of the convex portion of the crystal 14 corresponding to the periphery of the crystal 16 to be improved and the convexity of the crystal 14, so that the growth speed of the part of the crystal 14 corresponding to the convex portion of the periphery of the crystal 16 to be improved is relatively slowed down. In this way, the end of the grown crystal 14 away from the seed crystal 130 can be adjusted to be slightly convex or more flat, thereby improving the quality of the crystal 14.

[0093] Please continue reading Figure 1 and Figure 2 In addition, in this embodiment, a receiving groove 123 is provided on the outer wall 122 of the crucible cover 120, and the sacrificial structure 400 is at least partially embedded in the receiving groove 123. In this way, on the one hand, it is convenient to set the sacrificial structure 400 on the outer wall 122 of the crucible cover 120; on the other hand, the sacrificial structure 400 makes it easier to generate heat conduction in the crucible cover 120 during sublimation, thereby adjusting the temperature gradient in the crystal growth chamber 140.

[0094] Furthermore, since the sacrificial structure 400 is a layered structure formed by pressing carbon powder and silicon carbide powder, in this embodiment, the sacrificial structure 400 can be disposed in the receiving groove 123 in the following two ways:

[0095] The first method is that the sacrificial structure 400 is installed in the receiving groove 123 after being pressed. That is, the carbon powder and the silicon carbide powder are first arranged according to the preset molding shape and ratio of the sacrificial structure 400, and then pressed into blocks to form a layered structure, and then the pressed sacrificial structure 400 is installed in the receiving groove 123, for example, it can be pressed into the receiving groove 123.

[0096] Alternatively, a second method may be adopted: the sacrificial structure 400 is a layered structure formed by pressing the carbon powder and silicon carbide powder filled in the receiving groove 123. That is, the carbon powder and silicon carbide powder are first filled in the receiving groove 123 according to the preset molding shape of the sacrificial structure 400, and then the carbon powder and silicon carbide powder are pressed into blocks in the receiving groove 123 by pressing, thereby forming the sacrificial structure 400 filled in the receiving groove 123.

[0097] The sacrificial structure 400 can be obtained by pressing in both of the above two ways, and the pressing is convenient and easy to operate. The three different sacrificial structures 400 in the above embodiments can be obtained by adjusting the component ratio and the molding shape of each part of the sacrificial structure 400 from the inside to the outside in the radial direction as needed.

[0098] In order to better form the temperature regulating chamber 210, in this embodiment, the temperature regulating chamber 200 includes a first sleeve 220 and a regulating chamber cover 230. The first sleeve 220 is disposed outside the crucible cover 120, and the regulating chamber cover 230 is detachably connected to the top of the first sleeve 220. The first sleeve 220, the crucible cover 120 and the regulating chamber cover 230 together form the temperature regulating chamber 210.

[0099] It should be noted that the first sleeve 220 and the regulating chamber cover 230 are both made of graphite. The regulating chamber cover 230 can be optionally threadedly connected to the first sleeve 220. In addition, in some optional embodiments of the present invention, the first sleeve 220 can be installed on the outer side wall 122 of the crucible cover 120, as long as the first sleeve 220, the crucible cover 120 and the regulating chamber cover 230 can jointly enclose the temperature regulating chamber 210.

[0100] In this embodiment, in order to facilitate the installation of the first sleeve 220, the crystal growth device 10 with a sacrificial structure further includes a second sleeve 500. The second sleeve 500 is sleeved outside the crucible body 110, and the top of the second sleeve 500 is connected to the bottom of the first sleeve 220. In this way, it is only necessary to sleeve the second sleeve 500 outside the crucible body 110, and then install the regulating chamber cover 230 on the top of the first sleeve 220, so that the first sleeve 220, the crucible cover 120 and the regulating chamber cover 230 together surround the temperature regulating chamber 210, which is very convenient to install.

[0101] In this embodiment, the first sleeve 220 and the second sleeve 500 are integrally formed. Thus, when the second sleeve 500 is sleeved outside the crucible body 110, the first sleeve 220 protrudes from the outer side wall 122 of the crucible cover 120, and can more conveniently form the temperature regulating chamber 210 together with the crucible cover 120 and the regulating chamber cover 230.

[0102] Of course, in other embodiments of the present invention, the first sleeve 220 and the second sleeve 500 may not be integrally formed, and may be connected together by threaded connection or other connection methods.

[0103] In addition, in this embodiment, the crystal growth device 10 with a sacrificial structure further includes a graphite felt 600. The regulating chamber cover 230 is provided with a plurality of vent holes 231, and the graphite felt 600 is laid on a side of the regulating chamber cover 230 away from the temperature regulating chamber 210 and covers the plurality of vent holes 231.

[0104] It should be noted that, in this embodiment, the graphite soft felt 600 has a certain porosity, a certain number of pores, and a certain thickness. The porosity, number of pores, and thickness of the graphite soft felt 600 are set accordingly according to the size of the sacrificial structure 400 and the carbon silicon content. By setting the graphite soft felt 600, the gas formed by the sublimation of the sacrificial structure 400 can pass through the air vents 231, so that the graphite soft felt 600 can collect and filter the crystals generated by the sublimation of the sacrificial structure 400, reducing the pollution to the crystal growth furnace. In addition, the first sleeve 220, the second sleeve 500, and the regulating chamber cover 230 can jointly play a good supporting role for the graphite soft felt 600.

[0105] To summarize, in the crystal growth device 10 with a sacrificial structure provided in the embodiment of the present invention, during the growth process of the silicon carbide crystal 14, the sacrificial structure 400 is heated to a preset temperature and sublimated by the heating device 300. Since the sublimation absorbs heat, the heat is conducted through the crucible cover 120, thereby realizing the adjustment of the temperature gradient in the crystal growth chamber 140, and the temperature adjustment of the growth interface of the seed crystal 130 is more direct and significant, thereby maintaining the temperature of the growth interface of the seed crystal 130, and improving the growth efficiency and quality of the crystal 14.

[0106] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A crystal growth device with a sacrificial structure, characterized in that: include: A crucible (100), the crucible (100) comprising a crucible body (110), a crucible cover (120) and a seed crystal (130), the crucible cover (120) being detachably connected to the top of the crucible body (110), the crucible cover (120) and the crucible body (110) together forming a crystal growth chamber (140) for accommodating crystal growth raw materials (12), the seed crystal (130) being arranged on an inner side wall (121) of the crucible cover (120) and located in the crystal growth chamber (140); a temperature regulating cavity (200), wherein the temperature regulating cavity (200) is disposed outside the crucible cover (120) and together with the crucible cover (120) forms a temperature regulating cavity (210); a heating device (300), the heating device (300) being arranged on the periphery of the crucible body (110) and the temperature regulating cavity (200), and being used for heating the crucible body (110) and the temperature regulating cavity (200); and, A sacrificial structure (400) is disposed on the outer wall (122) of the crucible cover (120) and is located in the temperature regulating chamber (210). The sacrificial structure (400) is used to sublime when heated by the heating device (300) so as to adjust the temperature gradient in the crystal growth chamber (140).

2. The crystal growth device with a sacrificial structure according to claim 1, characterized in that: The projection of the sacrificial structure (400) on the inner sidewall (121) surrounds the projection of the seed crystal (130) on the inner sidewall (121).

3. The crystal growth device with a sacrificial structure according to claim 1 or 2, characterized in that: The sacrificial structure (400) is a layered structure formed by pressing carbon powder and silicon carbide powder.

4. The crystal growth device with a sacrificial structure according to claim 3, characterized in that: In the sacrificial structure (400), the silicon content of a portion where the projection on the inner side wall (121) coincides with the projection on the inner side wall (121) of the concave portion of the crystal to be improved (16) grown on the seed crystal (130) is greater than the silicon content of a portion where the projection on the inner side wall (121) coincides with the projection on the inner side wall (121) of the convex portion of the crystal to be improved (16) grown on the seed crystal (130).

5. The crystal growth device with a sacrificial structure according to claim 4, characterized in that: The sacrificial structure (400) includes a first sacrificial block (410) and a second sacrificial block (420); The second sacrificial block (420) is arranged around the outer periphery of the first sacrificial block (410), and the projection of the seed crystal (130) on the inner wall (121) is located within the projection range of the second sacrificial block (420) on the inner wall (121); The first sacrificial block (410) and the second sacrificial block (420) are both made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the second sacrificial block (420) is greater than the silicon content in the first sacrificial block (410).

6. The crystal growth device with a sacrificial structure according to claim 4, characterized in that: The sacrificial structure (400) includes a third sacrificial block (430), a fourth sacrificial block (440) and a fifth sacrificial block (450); The fourth sacrificial block (440) is arranged around the outer periphery of the third sacrificial block (430), the fifth sacrificial block (450) is arranged around the outer periphery of the fourth sacrificial block (440), and the projection of the seed crystal (130) on the inner side wall (121) is located within the projection range of the fifth sacrificial block (450) on the inner side wall (121); The third sacrificial block (430), the fourth sacrificial block (440) and the fifth sacrificial block (450) are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the third sacrificial block (430) and the silicon content in the fifth sacrificial block (450) are both less than the silicon content in the fourth sacrificial block (440).

7. The crystal growth device with a sacrificial structure according to claim 4, characterized in that: The sacrificial structure (400) includes a sixth sacrificial block (460), a seventh sacrificial block (470) and an eighth sacrificial block (480); The seventh sacrificial block (470) is arranged around the outer periphery of the sixth sacrificial block (460), the eighth sacrificial block (480) is arranged around the outer periphery of the seventh sacrificial block (470), and the projection of the seed crystal (130) on the inner side wall (121) is located within the projection range of the eighth sacrificial block (480) on the inner side wall (121); The sixth sacrificial block (460), the seventh sacrificial block (470) and the eighth sacrificial block (480) are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the sixth sacrificial block (460), the silicon content in the seventh sacrificial block (470) and the silicon content in the eighth sacrificial block (480) decrease in sequence.

8. The crystal growth device with a sacrificial structure according to claim 1, characterized in that: An accommodating groove (123) is provided on the outer side wall (122) of the crucible cover (120), and the sacrificial structure (400) is at least partially embedded in the accommodating groove (123).

9. The crystal growth device with a sacrificial structure according to claim 8, characterized in that: The sacrificial structure (400) is a layered structure formed by pressing carbon powder and silicon carbide powder, and the sacrificial structure (400) is installed in the containing groove (123) after being pressed. Alternatively, the sacrificial structure (400) is a layered structure formed by pressing the carbon powder and silicon carbide powder filled in the receiving groove (123).

10. The crystal growth device with a sacrificial structure according to claim 1, characterized in that: The temperature regulating chamber (200) comprises a first sleeve (220) and a regulating chamber cover (230); The first sleeve (220) is disposed outside the crucible cover (120), the regulating chamber cover (230) is detachably connected to the top of the first sleeve (220), and the first sleeve (220), the crucible cover (120) and the regulating chamber cover (230) together form the temperature regulating chamber (210).

11. The crystal growth device with a sacrificial structure according to claim 10, characterized in that: Also includes a second sleeve (500); The second sleeve (500) is sleeved outside the crucible body (110), and the top of the second sleeve (500) is connected to the bottom of the first sleeve (220).

12. The crystal growth device with a sacrificial structure according to claim 10, characterized in that: Also included is graphite soft felt (600); The regulating chamber cover (230) is provided with a plurality of air holes (231), and the graphite soft felt (600) is laid on a side of the regulating chamber cover (230) away from the temperature regulating chamber (210) and covers the plurality of air holes (231).

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