Air treatment equipment

Abstract

An air duct is formed in a shell, a water ion generation device is arranged in the air duct, the water ion generation device comprises an emission electrode, a high-voltage electrode, a high-voltage power source, a refrigeration part, a low-voltage power source, a relative humidity sensor, an ozone sensor and a control system, and the control system controls the water ion generation device to operate. Whether the low-voltage power supply needs to be started or not is judged according to the relative humidity H detected by the relative humidity sensor; when the relative humidity H is larger than a preset relative humidity value k, the low-voltage power supply is turned off, the high-voltage power supply is turned on, water in the air is ionized, and nano water ions are generated; and when the relative humidity H is below the preset relative humidity value k, turning on the low-voltage power supply, and adjusting the power supply voltage of the low-voltage power supply according to the ozone value x detected by the ozone sensor. The risk of overflow caused by insufficient condensate water or excessive condensate water of the nano water ion generator can be effectively prevented.

Description

Technical Field

[0001] The present application relates to the technical field of air treatment, and in particular to an air treatment device. Background Art

[0002] In addition to providing users with functions such as temperature regulation and air circulation, air handling equipment such as air conditioners and fresh air fans are also equipped with sterilization and disinfection modules for sterilizing and disinfecting indoor air.

[0003] The existing sterilization and disinfection module uses nano-water ion technology, which discharges water droplets on the tip electrode at high voltage, causing them to gradually split into water mist and decompose into highly active nano-scale water ions, which contain a large number of highly active hydroxyl free radicals. Hydroxyl free radicals have extremely high oxidizing properties and can decompose and remove bacteria, microorganisms, formaldehyde, VOCs and other components in the air.

[0004] However, water will be gradually consumed in the process of producing nano-water ions. One of the existing nano-water ion technologies is to use semiconductor refrigeration technology to directly cool the emitter electrode to produce condensed water. However, this technology makes it difficult for the emitter electrode to produce condensed water when the air humidity is low, and thus nano-water ions cannot be produced. In addition, semiconductors generally use a pair of PN junctions with limited cooling capacity, which has limited cooling effect on the emitter electrode, thus reducing the amount of condensed water produced.

[0005] In addition, the nano water ion generators currently on the market cannot control the amount of condensed water during semiconductor refrigeration, which can easily lead to the risk of less condensed water or more condensed water overflowing.

[0006] The above information disclosed in the background technology is only used to increase the understanding of the background technology of the present application, and therefore, it may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0007] In some embodiments of the present application, an air treatment device is provided, which detects the concentration of ozone and then infers the electric field strength between the emission electrode and the high-voltage electrode, and then infers the amount of condensed water on the emission electrode, which can effectively prevent the risk of insufficient condensed water or excessive condensed water overflowing in the nano water ion generator.

[0008] In some embodiments of the present application, an air treatment device is provided, comprising: A shell, in which an air duct is formed for gas circulation; a water ion generator is arranged in the air duct and is used to provide nano water ions to purify the gas; An emitting electrode, which is used to emit nano water ions; A high-voltage electrode, which is used to generate a high-voltage electric field with the emission electrode to ionize moisture on the emission electrode into nano-aqueous ions; A high-voltage power supply, which is used to supply power to the high-voltage electrode; A refrigeration unit, which is used to cool the emission electrode; A low-voltage power supply, which is used to supply power to the refrigeration unit; A relative humidity sensor, which is located at the emission electrode of the aqueous ion generating device and is used to detect the relative humidity H around the emission electrode; An ozone sensor, which is located at the emission port position of the aqueous ion generating device and is used to detect the ozone concentration; A control system, which controls the operation of the aqueous ion generating device, detects the relative humidity H of the air around the emission electrode through the relative humidity sensor, and determines whether to turn on the low-voltage power supply according to the relative humidity H; When the relative humidity H is greater than the preset relative humidity value k, turn off the low-voltage power supply, turn on the high-voltage power supply, ionize water in the air, and generate nano-aqueous ions; When the relative humidity H is below the preset relative humidity value k, turn on the low-voltage power supply, and adjust the supply voltage of the low-voltage power supply according to the ozone value x detected by the ozone sensor.

[0009] In some embodiments of the present application, the preset relative humidity value k is 90%RH.

[0010] In some embodiments of the present application, the control system collects the value of the ozone sensor once every preset time, and the preset time is 1 min.

[0011] In some embodiments of the present application, when the ozone value x is below the preset value a, keep the high-voltage power supply unchanged and increase the output voltage of the low-voltage power supply; when the output voltage of the low-voltage power supply increases by Δx, the control system first determines whether the output voltage reaches the upper limit value. If it reaches the upper limit value, it remains unchanged. If it does not reach the upper limit value, continue to read the value of the relative humidity sensor for cyclic judgment.

[0012] In some embodiments of the present application, when the output voltage of the low-voltage power supply reaches the upper limit and the ozone concentration is still below the preset value a, maintain the current state and continue to operate.

[0013] In some embodiments of the present application, when a < ozone value x < b, the system maintains the current state unchanged and continues to operate.

[0014] In some embodiments of the present application, when the ozone value x is above the preset value b, the control system controls the low-voltage power supply to reduce the output power by Δx, and after the reduction, read the value of the relative humidity sensor H again for another cycle. When the output voltage of the low-voltage power supply drops to 0V, the control system directly turns off the low-voltage power supply.

[0015] In other embodiments of the present application, an air treatment device is provided, which can increase the cooling temperature difference, thereby improving the cooling effect on the emitting electrode, improving the condensation ability of the emitting electrode from the air, and then reliably and stably generating nano water ions, thereby improving the air purification effect.

[0016] In some other embodiments of the present application, an air treatment device is provided, wherein an air duct is formed in a housing, and a water ion generating device is provided in the air duct, which includes an emitting electrode, a high-voltage electrode, a refrigeration part, and an insulating part; A high voltage electric field is generated between the high voltage electrode and the emission electrode to ionize the water on the emission electrode into nano water ions; The refrigeration part is used to cool the emission electrode, and includes a positive electrode part and a negative electrode part which are arranged opposite to each other, the positive electrode part is connected to the electron-type semiconductor, the negative electrode part is connected to the hole-type semiconductor, and the emission electrode is arranged at the junction of the electron-type semiconductor and the hole-type semiconductor; The insulating part is arranged between the high voltage electrode and the refrigeration part, and serves as a mounting carrier for the high voltage electrode and the refrigeration part.

[0017] When working, the PN junction formed by the electron semiconductor and the hole semiconductor starts to work, cooling the emitting electrode. The temperature of the emitting electrode gradually decreases, condensing moisture from the air. At the same time, a high-voltage electric field is formed between the emitting electrode and the high-voltage electrode. The moisture on the emitting electrode is ionized under the action of the high-voltage electric field to produce nano-water ions. The nano-water ions are sprayed into the air under the action of the electric field force to achieve sterilization and disinfection of the air.

[0018] According to the principle of semiconductor refrigeration technology, the temperature at the junction of the electron semiconductor and the hole semiconductor is the lowest. Placing the emitter electrode here is equivalent to strengthening the refrigeration capacity of the refrigeration unit on the emitter electrode, maximizing the refrigeration temperature difference, improving the cooling effect on the emitter electrode, and then improving the ability of the emitter electrode to condense moisture from the air, so that the emitter electrode can obtain condensed water even when the air humidity is low, thereby improving the reliability of the emitter electrode in emitting nano-water ions, thereby improving the sterilization and disinfection effect of the air treatment equipment on the air.

[0019] In some embodiments of the present application, the positive electrode portion includes a positive electrode plate, the negative electrode portion includes a negative electrode plate, and an installation space for installing the electron-type semiconductor and the hole-type semiconductor is enclosed between the positive electrode plate and the negative electrode plate; The electron-type semiconductor extends from the positive electrode plate to the negative electrode plate, and the hole-type semiconductor extends from the negative electrode plate to the positive electrode plate. The butt joint position between the electron-type semiconductor and the hole-type semiconductor is located in the installation space.

[0020] In some embodiments of the present application, the positive plate and the negative plate are in an arc-shaped structure, a plurality of the electron-type semiconductors are arranged at intervals on the positive plate, and a plurality of the hole-type semiconductors are arranged at intervals on the negative plate. The plurality of the electron-type semiconductors and the plurality of the hole-type semiconductors are arranged in one-to-one correspondence and are distributed in a spoke shape with the emitting electrode as the center.

[0021] In some embodiments of the present application, the positive plate is provided with a plurality of positive electrode heat dissipation fins and positive electrode plug terminals arranged at intervals on a side away from the installation space; The negative electrode plate is provided with a plurality of negative electrode heat dissipation fins and a negative electrode plug-in terminal arranged at intervals on a side facing away from the installation space.

[0022] In some embodiments of the present application, the installation space is filled with epoxy resin to seal the electron-type semiconductor, the hole-type semiconductor, the positive electrode plate, and the negative electrode plate.

[0023] In some embodiments of the present application, the insulating portion includes a base, and two supporting columns are arranged opposite to each other on the base, and the two supporting columns extend toward the same side of the base; The refrigeration part is arranged on one end of the two supporting columns close to the base, and the high-voltage electrode is arranged on the other end of the two supporting columns away from the base. The high-voltage electrode is provided with an ion emission port, and the emission tip of the emission electrode faces the ion emission port.

[0024] In some embodiments of the present application, the positive plate is provided with a positive mounting plate on a side away from the mounting space, and the positive mounting plate is connected to one of the supporting columns; A negative electrode mounting plate is provided on the side of the negative electrode plate facing away from the mounting space, and the negative electrode mounting plate is connected to another of the supporting columns.

[0025] In some embodiments of the present application, the support column is provided with a limiting notch at one end close to the base, and a hot melt column is provided in the limiting notch; The positive electrode mounting plate is embedded in the limiting notch on the corresponding side and fixed with the corresponding hot melt column by hot melting; The negative electrode mounting plate is embedded in the limiting notch on the corresponding side and fixed with the corresponding hot melt column by thermal melting.

[0026] In some embodiments of the present application, a positioning portion is provided on the base, and the positioning portion is inserted upward into the installation space from the bottom of the installation space to receive the electron-type semiconductor and the hole-type semiconductor.

[0027] In some embodiments of the present application, an air treatment device is provided, comprising: A shell, in which an air duct is formed for gas circulation; a water ion generator is arranged in the air duct and is used to provide nano water ions to purify the gas; An emitting electrode, which is used to emit nano water ions; A high-voltage electrode, which is used to generate a high-voltage electric field between the emitting electrode and the emitting electrode to ionize the water on the emitting electrode into nano-water ions; A refrigeration unit is used to cool the emitting electrode. The refrigeration unit includes a plurality of pairs of electron-type semiconductors and hole-type semiconductors arranged one by one. The docking position of each pair of the electron-type semiconductor and the hole-type semiconductor is connected to the emitting electrode.

[0028] After reading the specific implementation manner of the present application in conjunction with the accompanying drawings, other features and advantages of the present application will become more clear. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0030] Figure 1 is a schematic structural diagram of a water ion generating device according to an embodiment; Figure 2 is a cross-sectional view of a water ion generating device according to an embodiment; Figure 3 is a schematic diagram of the morphology of condensed water on the emission electrode of the water ion generating device according to the embodiment; Figure 4 is a schematic structural diagram of a refrigeration unit and an emitting electrode according to an embodiment; Figure 5 Schematic diagram of the sealing structure of the refrigeration unit and the emitter electrode according to the embodiment; Figure 6 is a schematic structural diagram of a negative electrode portion according to an embodiment; Figure 7 is a schematic structural diagram of an insulating portion according to an embodiment; Figure 8 is a schematic structural diagram of a high voltage electrode according to an embodiment; Fig. 9 It is a schematic structural diagram of a water ion generating device releasing water ions according to an embodiment; Fig.10 is a schematic diagram of a control system of a water ion generating device according to an embodiment; Fig.11 The control flow of the water ion generating device according to the embodiment is as follows Figure 1 ; Fig.12 The control flow of the water ion generating device according to the embodiment is as follows Figure 2 .

[0031] Reference numerals: 100. transmitting electrode; 200, refrigeration unit; 210, positive electrode unit; 211, positive electrode plate; 212, positive electrode heat dissipation fin; 213, positive electrode plug-in terminal; 214, positive electrode mounting plate; 215, positive electrode mounting hole; 220, negative electrode unit; 221, negative electrode plate; 222, negative electrode heat dissipation fin; 223, negative electrode plug-in terminal; 224, negative electrode mounting plate; 225, negative electrode mounting hole; 230, electron-type semiconductor; 240, hole-type semiconductor; 250, mounting space; 260, epoxy resin; 270, gap; 300, insulating part; 310, base; 311, positioning part; 321, positive electrode supporting column; 3211, positive limit position notch; 3212, positive electrode hot melt column; 322, negative electrode supporting column; 3221, negative limit position notch; 323, high-voltage hot melt column; 400, high voltage electrode; 410, high voltage electrode plate; 411, ion emission port; 412, high voltage mounting hole; 420, high voltage plug terminal; 500, high voltage power supply; 600, low voltage power supply; 700, relative humidity sensor; 800, temperature sensor; 10. Condensation water. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0033] This embodiment discloses an air treatment device, such as an air conditioner, a fresh air blower, etc. These devices can provide users with functions such as temperature adjustment and air circulation to improve the comfort of the indoor air environment.

[0034] The air handling device comprises a shell, and an air duct for air circulation is formed in the shell.

[0035] A water ion generator is arranged in the air duct, and the water ion generator is used to provide nano water ions to purify the air, so as to realize the sterilization and disinfection function of the air treatment equipment on the indoor air.

[0036] The principle of sterilization and disinfection of air by nano-water ions is: the hydroxyl free radicals produced by high-voltage ionization in nano-water ions have extremely strong oxidizing properties. When they come into contact with bacteria and viruses on the surface of particles or bacteria and viruses in the air, the hydroxyl free radicals grab hydrogen elements from the cell walls of the bacteria, thereby destroying the cell wall structure and inactivating the cells. Due to its strong oxidizing effect, it denatures proteins, thereby playing a role in sterilization and disinfection.

[0037] Take an air conditioner as an example. Its working principle is as follows: The air conditioner performs the refrigeration cycle of the air conditioner by using a compressor, condenser, expansion valve and evaporator. The refrigeration cycle includes a series of processes involving compression, condensation, expansion and evaporation to cool or heat the indoor space.

[0038] The low-temperature and low-pressure refrigerant enters the compressor, which compresses it into high-temperature and high-pressure refrigerant gas and discharges the compressed refrigerant gas. The discharged refrigerant gas flows into the condenser. The condenser condenses the compressed refrigerant into a liquid phase, and the heat is released to the surrounding environment through the condensation process.

[0039] The expansion valve expands the high-temperature and high-pressure liquid refrigerant condensed in the condenser into a low-pressure liquid refrigerant. The evaporator evaporates the refrigerant expanded in the expansion valve and returns the low-temperature and low-pressure refrigerant gas to the compressor. The evaporator can achieve a cooling effect by utilizing the latent heat of evaporation of the refrigerant to exchange heat with the material to be cooled. In the entire cycle, the air conditioner can adjust the temperature of the indoor space.

[0040] The outdoor unit of the air conditioner refers to a part of a refrigeration cycle including a compressor and an outdoor heat exchanger, the indoor unit of the air conditioner includes an indoor heat exchanger, and the expansion valve may be provided in the indoor unit or the outdoor unit.

[0041] The indoor heat exchanger and the outdoor heat exchanger function as a condenser or an evaporator. When the indoor heat exchanger functions as a condenser, the air conditioner functions as a heater in a heating mode, and when the indoor heat exchanger functions as an evaporator, the air conditioner functions as a cooler in a cooling mode.

[0042] An air duct for air circulation is formed in the indoor unit of the air conditioner, and the air duct includes a return air duct and an outlet air duct. An indoor heat exchanger is arranged in the inner cavity of the indoor unit. The indoor air circulates through the return air duct and the outlet air duct while flowing through the indoor heat exchanger to exchange heat with the indoor heat exchanger to achieve heating or cooling of the indoor air.

[0043] The water ion generating device is arranged in the return air duct and / or the outlet air duct, and the nano water ions generated by the water ion generating device enter the room along with the air flow to sterilize and disinfect the indoor air.

[0044] The water ion generator is installed at the air outlet of the indoor unit so that the generated nano water ions can directly enter the room with the air flow, which helps to improve the sterilization effect.

[0045] The structure of the water ion generator is shown in Figure 1 and Figure 2 , which mainly includes an emitting electrode 100, a high-voltage electrode 400, a cooling part 200, and an insulating part 300.

[0046] The emitter electrode 100 is used to emit nano water ions. The refrigeration unit 200 is used to cool the emitter electrode 100 so that the emitter electrode 100 condenses water from the air for ionization. The high-voltage electrode 400 is used to generate a high-voltage electric field with the emitter electrode 100 to ionize the condensed water on the emitter electrode 100 into nano water ions.

[0047] The emitting electrode 100 can be made of a special conductive water-absorbing material. At this time, the condensed water of the emitting electrode 100 has two sources. One part is that the water-absorbing material directly absorbs water from the air, and the other part is water condensed from the air by the emitting electrode 100 under the cooling effect of the refrigeration unit 200, thereby ensuring that the emitting electrode 100 has sufficient water for ionization. After the emitting electrode 100 is powered on, the water in the micropores on the surface of the water-absorbing material can be ionized into nano-water ions.

[0048] The emitter electrode 100 may also be a carbon fiber electrode with a pointed tip made of carbon fiber material, or a metal electrode made of corrosion-resistant material such as titanium-nickel alloy.

[0049] The structure of the refrigeration unit 200 is shown in FIG. Figure 4 It includes a positive electrode portion 210 and a negative electrode portion 220 that are arranged opposite to each other. The positive electrode portion 210 is connected to an electron-type semiconductor 230 (i.e., an N-type semiconductor), and the negative electrode portion 220 is connected to a hole-type semiconductor 240 (i.e., a P-type semiconductor). An emitting electrode 100 is arranged at the junction of the electron-type semiconductor 230 and the hole-type semiconductor 240.

[0050] When working, refer to Fig. 9 The low voltage power supply provides power to the cooling part 200, the positive electrode part 210 and the negative electrode part 220 are connected to the power supply respectively, and the PN junction formed by the electron semiconductor 230 and the hole semiconductor 240 starts to work, and the temperature of the emitting electrode 100 is gradually reduced, and moisture is condensed from the air. Figure 3The figure shows the shape of the condensed water 10 on the emitting electrode 100. At the same time, the high-voltage power supply 500 provides 3000-6000V high-voltage electricity to the high-voltage electrode 400, so that a high-voltage electric field is formed between the emitting electrode 100 and the high-voltage electrode 400. The water on the emitting electrode 100 is ionized under the action of the high-voltage electric field to produce nano-water ions. The nano-water ions are sprayed into the air under the action of the electric field force to achieve sterilization and disinfection of the air.

[0051] According to the principle of semiconductor refrigeration technology, the temperature at the junction of the electron-type semiconductor 230 and the hole-type semiconductor 240 is the lowest. Placing the emitter electrode 100 here is equivalent to strengthening the cooling capacity of the refrigeration unit 200 on the emitter electrode 100, maximizing the cooling temperature difference, and improving the cooling effect on the emitter electrode 100, thereby improving the ability of the emitter electrode 100 to condense moisture from the air, so that the emitter electrode 100 can obtain condensed water even when the air humidity is low, thereby improving the reliability of the emitter electrode 100 in emitting nano-water ions, thereby improving the sterilization and disinfection effect of the air treatment equipment on the air.

[0052] The insulating portion 300 is disposed between the high voltage electrode 400 and the cooling portion 200 , and serves as a mounting carrier for the high voltage electrode 400 and the cooling portion 200 .

[0053] The insulating part 300 also plays a role in controlling the distance between the high-voltage electrode 400 and the emitting electrode 100 , so that a constant distance is maintained between the high-voltage electrode 400 and the emitting electrode 100 , thereby forming a stable high-voltage electric field.

[0054] In some embodiments of the present application, a plurality of electron-type semiconductors 230 are arranged on the positive electrode portion 210, and a plurality of hole-type semiconductors 240 are arranged on the negative electrode portion 220. The plurality of electron-type semiconductors 230 correspond one-to-one to the plurality of hole-type semiconductors 240 to form a plurality of pairs of PN junctions. The plurality of pairs of PN junctions help to improve the semiconductor cooling effect and further improve the cooling effect of the emitter electrode 100.

[0055] In some embodiments of the present application, refer to Figure 4 The positive electrode portion 210 includes a positive electrode plate 211, and the negative electrode portion 220 includes a negative electrode plate 221. The positive electrode plate 211 and the negative electrode plate 221 are arranged opposite to each other, and an installation space 250 for installing the electron-type semiconductor 230 and the hole-type semiconductor 240 is formed between the positive electrode plate 211 and the negative electrode plate 221. The docking position of the electron-type semiconductor 230 and the hole-type semiconductor 240 is located in the installation space 250.

[0056] The electron semiconductor 230 extends from the positive plate 211 to the negative plate 221, and the hole semiconductor 240 extends from the negative plate 221 to the positive plate 211. The electron semiconductor 230 and the hole semiconductor 240 facing each other are close to each other, and the emitter electrode 100 is placed at the joint of the two.

[0057] All the electron semiconductors 230 and hole semiconductors 240 are located in the installation space 250. The installation space 250 provides an independent installation space 250 for the electron semiconductors 230 and the hole semiconductors 240. The emitter electrode 100 extends from the PN node to the outside of the installation space 250, and the emission tip of the emitter electrode 100 points to the high-voltage electrode 400.

[0058] In some embodiments of the present application, the positive plate 211 and the negative plate 221 are arc-shaped structures, a plurality of electron-type semiconductors 230 are arranged at intervals on the positive plate 211 , and a plurality of hole-type semiconductors 240 are arranged at intervals on the negative plate 221 .

[0059] The positive electrode plate 211 and the negative electrode plate 221 of the arc-shaped structure are arranged opposite to each other on the left and right, and form an installation space 250 with a circular outline. A plurality of electron-type semiconductors 230 and a plurality of hole-type semiconductors 240 are distributed in a spoke shape with the emitting electrode 100 as the center. The emitting electrode 100 is located at the center of the circular installation space 250, and the structural layout is compact.

[0060] In some embodiments of the present application, a plurality of positive electrode heat dissipation fins 212 and a positive electrode plug-in terminal 213 arranged at intervals are provided on the side of the positive electrode plate 211 facing away from the installation space 250 .

[0061] The positive plate 211, the positive heat sink fins 212, and the positive plug-in terminal 213 are made of thermally conductive metal in one piece, and the integrated structure can simultaneously realize the functions of conducting electricity and dissipating heat. The positive heat sink fins 212 are used to dissipate heat for the positive plate 211, which helps to improve the cooling effect of the PN junction. The positive plug-in terminal 213 is used to connect to a low-voltage power supply.

[0062] Same, refer to Figure 6 The negative electrode plate 221 is provided with a plurality of negative electrode heat dissipation fins 222 and a negative electrode plug-in terminal 223 arranged at intervals on a side facing away from the installation space 250 .

[0063] The negative plate 221, the negative heat sink fin 222, and the negative plug terminal 223 are made of thermally conductive metal in one piece, and the integrated structure can simultaneously realize the functions of conducting electricity and dissipating heat. The negative heat sink fin 222 is used to dissipate heat for the negative plate 221, which helps to improve the cooling effect of the PN junction. The negative plug terminal 223 is used to connect to a low-voltage power supply.

[0064] In some embodiments of the present application, the positive electrode plug terminal 213 and the negative electrode plug terminal 223 are arranged opposite to each other, and the widths of the positive electrode plug terminal 213 and the negative electrode plug terminal 223 are different, which plays an anti-mistake effect in installation and prevents the positive and negative poles from being connected incorrectly during installation. If the positive and negative poles are connected in reverse, the emitting electrode 100 will not work properly.

[0065] In some embodiments of the present application, refer to Figure 5 Since the structural strength of the electron-type semiconductor 230 and the hole-type semiconductor 240 is relatively weak, in order to improve the structural strength and reliability, epoxy resin 260 is filled in the installation space 250 to seal the electron-type semiconductor 230, the hole-type semiconductor 240, the positive plate 211, and the negative plate 221. The epoxy resin 260 wraps the electron-type semiconductor 230 and the hole-type semiconductor 240 to prevent the electronic semiconductor 230 and the hole-type semiconductor 240 from breaking at both ends of the semiconductor during installation and use.

[0066] Refer to Figure 4 The electron-type semiconductor 230, the hole-type semiconductor 240, and the emitter electrode 100 are located in an installation space 250 surrounded by the positive plate 211 and the negative plate 221, and the positive heat dissipation fins 212, the positive plug-in terminal 213, the negative heat dissipation fins 222, and the negative plug-in terminal 223 are located outside the installation space 250.

[0067] The formation of the installation space 250 facilitates the injection and sealing of the epoxy resin 260 , while not affecting the heat dissipation of the externally arranged heat dissipation fins and the wiring operation of the plug-in terminals.

[0068] The external heat sink facilitates heat dissipation, and the external plug-in terminals also facilitate wiring operations.

[0069] In some embodiments of the present application, refer to Figure 7 The insulating part 300 includes a base 310 , on which two supporting columns (denoted as a positive electrode supporting column 321 and a negative electrode supporting column 322 ) are arranged opposite to each other, and the two supporting columns extend toward the same side of the base 310 .

[0070] The refrigeration unit 200 is disposed on one end of the two supporting columns close to the base 310 , and the high-voltage electrode 400 is disposed on the other end of the two supporting columns away from the base 310 . An ion emission port 411 is disposed on the high-voltage electrode 400 , and the emission tip of the emission electrode 100 faces the ion emission port 411 .

[0071] The two support columns are spaced apart, and the positive plate 211, the negative plate 221, the electron semiconductor 230, the hole semiconductor 240, and the emitting electrode 100 are located between the two support columns, which does not affect the alignment between the emitting electrode 100 and the ion emission port 411 to release nano water ions.

[0072] In some embodiments of the present application, refer to Figure 4 and Figure 7 A positive electrode mounting plate 214 is provided on the side of the positive electrode plate 211 away from the mounting space 250 , and the positive electrode mounting plate 214 is connected to one of the supporting columns (specifically, the positive electrode supporting column 321 ) to achieve fixed installation of the positive electrode portion 210 .

[0073] A negative electrode mounting plate 224 is provided on the side of the negative electrode plate 221 away from the mounting space 250 . The negative electrode mounting plate 224 is connected to another supporting column (specifically, a negative electrode supporting column 322 ) to achieve fixed installation of the negative electrode portion 220 .

[0074] The positive electrode mounting plate 214 can be played by a positive electrode heat dissipation fin 212 located at the outermost side of the positive electrode part 210, and the negative electrode mounting plate 224 can be played by a negative electrode heat dissipation fin 222 located at the outermost side of the negative electrode part 220. In this way, the positive electrode mounting plate 214 and the negative electrode mounting plate 224 play both the role of heat dissipation and the role of installation and fixing.

[0075] The positive electrode mounting plate 214 and the negative electrode mounting plate 224 are arranged opposite to each other to facilitate the fixed installation of the supporting columns on the corresponding sides.

[0076] The positive electrode part 210 and the negative electrode part 220 are fixedly connected to the two supporting columns, and the base 310 supports and lifts the positive electrode part 210 and the negative electrode part 220 .

[0077] In some embodiments of the present application, refer to Figure 7 The support column has a limit notch at one end near the base 310, and a hot melt column is arranged in the limit notch. Specifically, the positive electrode support column 321 is provided with a positive limit notch 3211 and a positive hot melt column 3212, and the negative electrode support column 322 is provided with a negative limit notch 3221 and a negative hot melt column (not shown).

[0078] The positive electrode mounting plate 214 is embedded in the positive limit position notch 3211 . A positive electrode mounting hole 215 is provided on the positive electrode mounting plate 214 , and is fixed to the positive electrode hot melt column 3212 by hot melt.

[0079] The negative electrode mounting plate 224 is embedded in the negative limit notch 3221 . A negative electrode mounting hole 225 is provided on the negative electrode mounting plate 224 , and is fixed to the negative electrode hot melt column by heat melting.

[0080] The limiting notch serves as a limiting clamp for the positive mounting plate 214 and the negative mounting plate 224 . The positive limiting notch 3211 and the negative limiting notch 3221 are oriented in opposite directions, which effectively prevents the refrigeration unit 200 from twisting after installation, and helps to improve the installation reliability of the refrigeration unit 200 .

[0081] There is a gap 270 between the positive electrode portion 210 and the negative electrode portion 220 for the support pillars to extend out. The positive electrode portion 210 is located on one side of the two support pillars, and the negative electrode portion 220 is located on the other side of the two support pillars.

[0082] In some embodiments of the present application, a positioning portion 311 is provided on the base 310 , and the positioning portion 311 is inserted upward into the installation space 250 from the bottom of the installation space 250 to receive the electron-type semiconductor 230 and the hole-type semiconductor 240 .

[0083] The positioning portion 311 and the supporting column are located on the same side of the base 310. The positioning portion 311 is a hollow annular raised rib structure. When installing the refrigeration unit 200, the refrigeration unit 200 is placed on the base 310 from top to bottom, the positive electrode portion 210 is located on one side of the supporting column, and the negative electrode portion 220 is located on the other side of the supporting column. The positioning portion 311 is inserted into the installation space 250 from bottom to top, and the top of the positioning portion 311 abuts against the bottom of the electronic semiconductor 230 and the hole-type semiconductor 240, specifically, abuts against the epoxy resin 260 used to seal the electronic semiconductor 230 and the hole-type semiconductor 240. Then, the refrigeration unit 200 is rotated along the circumference of the base 310, so that the positive electrode mounting plate 214 is embedded in the positive limit position notch 3211 and then fixed by heat melting, and the negative electrode mounting plate 224 is embedded in the negative limit position notch 3221 and then fixed by heat melting.

[0084] The diameter of the cylindrical structure surrounded by the positioning portion 311 gradually decreases from bottom to top, forming a constricted shape, which serves as an installation guide and facilitates insertion into the installation space 250 .

[0085] In some embodiments of the present application, the high voltage electrode 400 includes a high voltage electrode 400 plate, on which an ion emission port 411 is provided, and on which a high voltage plug terminal 420 for connecting to a high voltage power supply 500 is provided.

[0086] The two support columns are provided with heat-melting columns for fixing the high-voltage electrode 400 board at one end away from the base 310, which are denoted as high-voltage heat-melting columns 323. The high-voltage electrode 400 board is provided with high-voltage mounting holes 412 for fixing with the high-voltage heat-melting columns 323.

[0087] In some embodiments of the present application, refer to Fig.10 A temperature sensor 800 and a relative humidity sensor 70 are provided at the water ion emission port 411 .

[0088] The control system first detects the relative humidity H around the transmitting electrode 100; According to the value of relative humidity H, the system determines whether it is necessary to turn on the low voltage power supply 600 at present; If not needed, directly turn on the high voltage power supply 500 to ionize the water in the air; When the system determines that the low-voltage power supply 600 needs to be turned on, the system will detect the ambient temperature T1 around the transmitting electrode 100. The system automatically calculates the dew point temperature T2 of the moisture in the air under the current environmental conditions based on the relative humidity H and the ambient temperature T1, and calculates the difference ∆T=T1-T2 between the ambient temperature T1 and the dew point temperature T2. The smaller the ∆T value, the smaller the required cooling capacity, and the output voltage of the low-voltage power supply 600 can be reduced. The larger the ∆T value, the larger the required cooling capacity, and the output voltage of the low-voltage power supply 600 needs to be increased.

[0089] Therefore, by detecting the ∆T value to control the output voltage of the low-voltage power supply 600, the risk of insufficient condensation or excessive condensation causing overflow in the water ion generating device can be effectively prevented.

[0090] In some embodiments of the present application, since the nano water ion generators currently on the market cannot accurately control the amount of condensed water during semiconductor refrigeration, it is easy to generate less condensed water or more condensed water and cause overflow.

[0091] Reference Fig.11 , Fig.12 An ozone sensor is also provided at the water ion emitting port 411 .

[0092] The control system first detects the relative humidity H around the transmitting electrode 100; According to the value of relative humidity H, it is determined whether the low voltage power supply 600 needs to be turned on at present; If not needed, directly turn on the high voltage power supply to ionize the water in the air; at this time, there is no need to detect the ozone concentration; When the system determines that the low-voltage power supply 600 needs to be turned on, the high-voltage power supply 500 is turned on at the same time as the low-voltage power supply 600. Under the action of semiconductor refrigeration, the emitter electrode 100 begins to produce condensed water. Under the action of the electric field force, the condensed water gathers toward the emitter tip. Under the action of the high-voltage power supply 500, the water is polarized into a conductor. As the condensed water increases, the distance between the emitter electrode 100 and the high-voltage electrode becomes shorter. Under the condition of constant voltage, the electric field strength increases, thereby increasing the amount of ozone generated. The system collects the ozone value x of the ozone sensor every preset time; When the ozone value x < the preset value a, it means that the amount of ozone generated is low, the discharge intensity is weak, and there is less condensed water on the emission electrode 100, in order to provide a sufficient discharge gap; at this time, the system control maintains the high-voltage power supply 500 unchanged, increases the output voltage cV of the low-voltage power supply 600, and then increases the cooling power of the semiconductor to generate more condensed water. After the low-voltage power supply 600 increases cV, the system first determines whether the output voltage reaches the upper limit value; If the upper limit is reached, it will remain unchanged; if it is not reached, the relative humidity value will continue to be read and cycled again; If the ozone concentration x is still < a after the low-voltage power supply 600 is raised to the upper limit, it indicates that the air humidity is too low at this time, and the nano-hydrogen ion module cannot generate enough moisture to continue operating in the current state; When the ozone value a < x < b, the nano-hydrogen ion module is in a good operating state at this time. The amount of water generated by the semiconductor refrigeration is basically the same as the amount of water consumed by ionization, and the system maintains this state and continues to operate; When the ozone value x > b, it indicates that the ozone generation amount is relatively high and the discharge intensity is relatively high at this time. It further indicates that there is more condensed water on the emission electrode 100, resulting in a relatively short distance between the emission electrode 100 and the high-voltage electrode, a relatively high discharge intensity, and excessive ozone generation. At this time, the condensed water on the emission electrode 100 is extremely likely to overflow. At this time, the system automatically controls to reduce the output voltage cV of the low-voltage power supply 600, reads the value of the relative humidity sensor again after the reduction, and performs another cycle; After the output voltage of the semiconductor refrigeration power supply drops to 0V, the system controls the direct low-voltage power supply 600.

[0093] In some embodiments of the present application, the preset time is 1 min; In some embodiments of the present application, when the relative humidity H is greater than 90%RH, it indicates that there is enough moisture in the air at this time, the conductivity is relatively high, and there is no need for the semiconductor refrigeration to generate extra water. At this time, the low-voltage power supply 600 is turned off and the high-voltage power supply 500 is directly operated; when the relative humidity H is below 90%RH, the low-voltage power supply 600 is started, and at the same time, the ozone value of the ozone sensor is monitored, according to the ozone concentration; Adjust the supply voltage of the low-voltage power supply 600 according to the level of the ozone concentration to prevent insufficient or excessive condensed water on the emission electrode 100.

[0094] In some embodiments of the present application, an ozone sensor is installed at the nano-hydrogen ion emission port. After the emission electrode generates condensed water, under the action of the electric field force, the condensed water will gather towards the emission tip. Under the action of the high-voltage power supply, the water will be polarized and become a conductor. As the condensed water increases, the distance between the emission electrode and the high-voltage electrode shortens. Under the condition of constant voltage, the electric field strength increases. While ionizing water, the oxygen in the air will be excited into ozone. The higher the electric field strength, the higher the generated ozone concentration. Therefore, the electric field strength between the emission electrode and the high-voltage electrode can be deduced by detecting the ozone concentration, and then the amount of condensed water on the emission electrode can be deduced.

[0095] The control system can directly reversely control the output voltage of the semiconductor refrigeration power supply according to the generated ozone concentration. When the ozone concentration is low, it means that the condensed water is insufficient. The system controls to increase the voltage of the semiconductor refrigeration power supply, thereby increasing the condensed water capacity. When the ozone concentration exceeds a certain limit, it means that the condensed water is excessive. The system controls to reduce the voltage of the semiconductor refrigeration power supply, thereby reducing its condensed water capacity. This control method can effectively prevent the risk of overflow due to insufficient condensed water or excessive condensed water in the nano water ion generator.

[0096] In the description of the above embodiments, specific features, structures, materials or characteristics may be combined in a suitable manner in any one or more embodiments or examples.

[0097] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. An air treatment device, characterized in that: Comprising: A housing, inside which an air duct for gas flow is formed; A water ion generating device, which is arranged in the air duct and is used to provide nano water ions to purify the gas; The water ion generating device includes: An emission electrode, which is used to emit nano water ions; A high-voltage electrode, which is used to generate a high-voltage electric field with the emission electrode to ionize the moisture on the emission electrode into nano water ions; A high-voltage power supply, which is used to supply power to the high-voltage electrode; A refrigeration unit, which is used to cool the emission electrode; A low-voltage power supply, which is used to supply power to the refrigeration unit; A relative humidity sensor, which is located at the emission electrode and is used to detect the relative humidity H around the emission electrode; An ozone sensor, which is located at the emission port of the water ion generating device and is used to detect the ozone concentration; A control system, which controls the operation of the water ion generating device and judges whether to turn on the low-voltage power supply according to the relative humidity H detected by the relative humidity sensor; When the relative humidity H is greater than the preset relative humidity value k, turn off the low-voltage power supply, turn on the high-voltage power supply, ionize the water in the air, and generate nano water ions; When the relative humidity H is below the preset relative humidity value k, turn on the low-voltage power supply, and adjust the supply voltage of the low-voltage power supply according to the ozone value x detected by the ozone sensor.

2. An air treatment device according to claim 1, characterized in that: The preset relative humidity value k is 90%RH.

3. The air treatment equipment according to claim 1, characterized in that: The control system collects the value of the ozone sensor every preset time.

4. The air treatment equipment according to claim 1, characterized in that: When the detected ozone value x is below the preset value a, keep the high-voltage power supply unchanged and increase the output voltage of the low-voltage power supply; after the output voltage of the low-voltage power supply increases by Δx, the control system first judges whether the output voltage reaches the upper limit value. If it reaches the upper limit value, it remains unchanged. If it does not reach the upper limit value, continue to read the value of the relative humidity sensor for cyclic judgment.

5. The air treatment equipment according to claim 1, characterized in that: When the output voltage of the low-voltage power supply reaches the upper limit and the ozone concentration is still below the preset value a, maintain the current state and continue to operate.

6. The air treatment equipment according to claim 1, characterized in that: When a < ozone value x < b, the system maintains the current state unchanged and continues to operate.

7. The air treatment equipment according to claim 1, characterized in that: When the ozone value x is above the preset value b, the control system controls the low-voltage power supply to reduce the output power by Δx. After the reduction, read the value of the relative humidity sensor H again for another cycle; when the output voltage of the low-voltage power supply drops to 0V, the control system directly turns off the low-voltage power supply.

8. An air treatment device according to any one of claims 1 to 7, characterized in that: The refrigeration unit, which is used to cool the emission electrode, the refrigeration unit includes a positive electrode part and a negative electrode part arranged oppositely, the positive electrode part is connected to an electron-type semiconductor, the negative electrode part is connected to a hole-type semiconductor, and the emission electrode is arranged at the docking position of the electron-type semiconductor and the hole-type semiconductor.

9. An air treatment device according to claim 8, characterized in that: The positive electrode part includes a positive electrode plate, the negative electrode part includes a negative electrode plate, and an installation space for installing the electron-type semiconductor and the hole-type semiconductor is formed between the positive electrode plate and the negative electrode plate; The electron-type semiconductor extends from the positive electrode plate towards the negative electrode plate, and the hole-type semiconductor extends from the negative electrode plate towards the positive electrode plate; The docking position of the electron-type semiconductor and the hole-type semiconductor is located inside the installation space.

10. The air treatment device according to claim 8, wherein, The positive plate and the negative plate are in an arc-shaped structure. A plurality of the electron-type semiconductors are arranged at intervals on the positive plate, and a plurality of the hole-type semiconductors are arranged at intervals on the negative plate. The plurality of the electron-type semiconductors and the plurality of the hole-type semiconductors are arranged in one-to-one correspondence and distributed in a spoke shape with the emitting electrode as the center.

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