Chip surface charge elimination method and device

Abstract

The invention provides a chip surface charge elimination method and device. The method comprises the following steps: injecting a gas precursor to the side surface of a chip substrate at a first angle by using a gas injection needle; emitting an ion beam to the side surface of the chip substrate at a second angle by using focused ion beam equipment, and bombarding and decomposing the gas precursor by using the ion beam so as to deposit metal at a target position on the side surface of the chip substrate; the first angle and the second angle are included angles relative to the plane where the side surface of the chip substrate is located; and surface charges of the chip are eliminated by metal grounding. According to the method, the gas precursor is bombarded and decomposed through the ion beam to deposit the metal at the target position on the side surface of the chip substrate, and the chip substrate and the ground are connected through the metal, so that charges on the surface of the chip in the chip circuit repairing process can be exported and eliminated, chip image malformation and drifting are avoided, and the circuit repairing precision is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method and device for eliminating charge on a chip surface. Background Art

[0002] In semiconductor failure analysis, circuit repair is a commonly used chip-level failure analysis method. Circuit repair refers to processing chip circuits using a dual-beam focused ion beam (FIB, Focused Ion beam).

[0003] Using dual-beam focused ion beams to repair the nanoscale signal circuits required for chip testing requires the chip to be stable under electron beam irradiation. During the circuit repair process, hot melt adhesive is usually used to fix the chip, which has the advantage of being easy to take and place chip samples.

[0004] However, when a chip is exposed to electron beam, a large amount of charge will accumulate on the chip using hot melt adhesive spacers, causing the chip image to become deformed and drift, thus affecting the accuracy of circuit repair. Summary of the invention

[0005] In view of this, this summary of the invention is provided to introduce the concepts in a brief form, which will be described in detail in the detailed description section below. This summary of the invention is not intended to identify the key features or essential features of the technical solution claimed for protection, nor is it intended to be used to limit the scope of the technical solution claimed for protection.

[0006] The purpose of the present application is to provide a chip surface charge elimination method and device, which can eliminate the charge on the chip surface during the chip circuit repair process, avoid chip image distortion and drift, and improve the accuracy of circuit repair.

[0007] To achieve the above purpose, this application has the following technical solutions:

[0008] In a first aspect, an embodiment of the present application provides a method for eliminating charge on a chip surface, characterized by comprising:

[0009] Using a gas injection needle to inject a gas precursor toward the side of the chip substrate at a first angle;

[0010] Using a focused ion beam device to emit an ion beam at a second angle toward the side of the chip substrate, so as to use the ion beam to bombard and decompose the gas precursor, so as to deposit metal at a target position on the side of the chip substrate; the first angle and the second angle are both angles relative to the plane where the side of the chip substrate is located;

[0011] The metal grounding is used to eliminate the surface charge of the chip.

[0012] In a possible implementation, the method further includes: fixing the bottom surface of the chip substrate on a conductive transfer base plate by hot melt adhesive, and before spraying the gas precursor, rotating the conductive transfer base plate to a third angle, wherein the third angle is the angle between the bottom surface of the chip substrate and the vertical direction.

[0013] In one possible implementation, the method also includes: forming at least one linear groove on the surface and side of the hot melt adhesive; adjusting the emission position of the ion beam to deposit metal in the linear groove to form a conductive metal wire, one end of the conductive metal wire is connected to the side of the chip substrate, and the other end is connected to the conductive transfer base plate.

[0014] In a possible implementation manner, the third angle is [52.1°, 59.1°], and the resistance of the conductive metal wire formed at the third angle is less than 100Ω.

[0015] In a possible implementation, the ion beam includes a Ga ion beam; the convergence degree of the ion beam is [-50 μm, 50 μm]; and the pattern repeatability of the metal deposition is [-200%, -150%].

[0016] In a possible implementation, the metal includes Pt and / or W.

[0017] In one possible implementation, the gas precursor includes C9H 16 Pt or W(CO)6.

[0018] In a second aspect, an embodiment of the present application provides a chip surface charge elimination device using the method described above, the device comprising:

[0019] A conductive transfer base plate, and hot melt adhesive on the conductive transfer base plate;

[0020] The chip comprises a chip substrate; the bottom surface of the chip substrate is located on a side surface of the hot melt adhesive away from the conductive transfer base plate; and a conductive metal wire is deposited on a side surface of the chip substrate;

[0021] At least one conductive metal wire is located on the side of the chip substrate and the surface of the hot melt adhesive, and the conductive metal wire connects the side of the substrate and the conductive transfer base plate.

[0022] In a possible implementation manner, a linear groove is provided on the surface of the hot melt adhesive, and the conductive metal wire is located in the linear groove.

[0023] In a possible implementation manner, the length of the conductive metal wire is greater than or equal to 200 μm, and the thickness of the metal is greater than or equal to 10 μm.

[0024] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0025] The embodiment of the present application provides a method and device for eliminating charge on the chip surface, the method comprising: using a gas jet needle to spray a gas precursor at a first angle to the side of the chip substrate; using a focused ion beam device to emit an ion beam at a second angle to the side of the chip substrate, so as to use the ion beam to bombard and decompose the gas precursor to deposit metal at a target position on the side of the chip substrate; the first angle and the second angle are both angles relative to the plane where the side of the chip substrate is located; and using metal grounding to eliminate the charge on the chip surface. The present application uses ion beam bombardment to decompose the gas precursor to deposit metal at a target position on the side of the chip substrate, and connects the chip substrate and the ground through metal, so that the charge on the chip surface during the chip circuit repair process can be derived and eliminated, avoiding chip image deformity and drift, and improving the accuracy of circuit repair. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the accompanying drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the originals and elements are not necessarily drawn to scale.

[0028] Figure 1 A schematic diagram of an electron microscope image under a charging effect provided in the related art is shown;

[0029] Figure 2 A flow chart of a chip surface charge elimination method provided by an embodiment of the present application is shown;

[0030] Figure 3 A schematic diagram of a chip surface charge elimination device provided in an embodiment of the present application is shown;

[0031] Figure 4 A schematic diagram of another chip surface charge elimination device provided in an embodiment of the present application is shown;

[0032] Figure 5 An electron microscope photograph of a chip surface charge elimination device provided in an embodiment of the present application is shown;

[0033] Figure 6 An electron microscope photograph of another chip surface charge elimination device provided in an embodiment of the present application is shown;

[0034] Figure 7 A schematic diagram of another chip surface charge elimination device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0035] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.

[0036] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and those skilled in the art may make similar generalizations without violating the connotation of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0037] As described in the related art, in semiconductor failure analysis, circuit repair is a commonly used chip-level failure analysis method. Circuit repair refers to processing chip circuits using a dual-beam focused ion beam (FIB, Focused Ion beam).

[0038] Using dual-beam focused ion beams to repair the nanoscale signal circuits required for chip testing requires the chip to be stable under electron beam irradiation. During the circuit repair process, hot melt adhesive is usually used to fix the chip, which has the advantage of being easy to take and place chip samples.

[0039] However, when a chip is exposed to electron beam, a large amount of charge will accumulate on the chip using hot melt adhesive spacers, causing the chip image to become deformed and drift, thus affecting the accuracy of circuit repair.

[0040] Specifically, a large amount of charge accumulated on the chip surface will produce a charging effect. The charging effect will cause the secondary electron emission to be affected by the irregular charge accumulation, which will cause part of the chip observation image received to be abnormally bright and part to be dark. See Figure 1 As shown, it is a schematic diagram of an electron microscope image under a charging effect provided in the related art. Under the action of the charging effect, the surface of the chip 10 and the surface of the hot melt adhesive 20 are severely charged. Part of the electron microscope observation image is abnormally bright, part of it is dark, and the image of the earth 30 is darker. At the same time, due to the electrostatic field generated by the charge, the incident electron beam is irregularly deflected during the irradiation process, resulting in image distortion or phase difference. Due to the action of the electrostatic field, the incident electron beam will also be deflected in a certain direction to form an image drift. In addition, due to the irregularity of charge accumulation, the charged chip often undergoes irregular discharge, resulting in irregular bright spots and bright lines in the image.

[0041] If image distortion occurs, the electron beam observation and alignment in circuit repair will be hindered, and accurate positioning cannot be achieved. If image drift occurs, the target area of ​​chip circuit repair will change with the chip drift, and the target area cannot be accurately processed, and non-target areas will be damaged.

[0042] The related technical route is to add silver glue to the hot melt adhesive to increase the conductivity, so as to guide the charge on the chip surface during the circuit repair process. However, the mixing ratio and uniformity are difficult to control, and the actual effect is not obvious.

[0043] Based on the above technical problems, the embodiment of the present application provides a method and device for eliminating charge on the chip surface, the method comprising: using a gas jet needle to spray a gas precursor at a first angle to the side of the chip substrate; using a focused ion beam device to emit an ion beam at a second angle to the side of the chip substrate, so as to use the ion beam to bombard and decompose the gas precursor to deposit metal at a target position on the side of the chip substrate; the first angle and the second angle are both angles relative to the plane where the side of the chip substrate is located; and using metal grounding to eliminate the charge on the chip surface. The present application uses ion beam bombardment to decompose the gas precursor to deposit metal at a target position on the side of the chip substrate, and connects the chip substrate and the ground through metal, so that the charge on the chip surface during the chip circuit repair process can be derived and eliminated, avoiding chip image deformity and drift, and improving the accuracy of circuit repair. In order to better understand the technical scheme and technical effects of the present application, the specific embodiments will be described in detail below in conjunction with the accompanying drawings.

[0044] Exemplary Methods

[0045] See also Figure 2 As shown, Figure 2 A flow chart of a chip surface charge elimination method provided in an embodiment of the present application, the method comprising:

[0046] S101: using a gas injection needle to inject a gas precursor toward a side surface of the chip substrate at a first angle;

[0047] S102: Use a focused ion beam device to emit an ion beam at a second angle toward the side of the chip substrate, so as to use the ion beam to bombard and decompose the gas precursor to deposit metal at a target position on the side of the chip substrate; the first angle and the second angle are both angles relative to the plane where the side of the chip substrate is located.

[0048] In the examples of this application, see Figure 3 , which is a schematic diagram of a chip surface charge elimination device provided in an embodiment of the present application.

[0049] The chip substrate 1 provided in the embodiment of the present application may be a semiconductor substrate, for example, a Si substrate, a Ge substrate, a SiGe substrate, SOI (Silicon On Insulator) or GOI (Germanium On Insulator), etc. In other embodiments, the semiconductor substrate may also be a substrate including other element semiconductors or compound semiconductors, such as GaAs, InP or SiC, etc., and may also be a stacked structure, such as Si / SiGe, etc., and may also be other epitaxial structures, such as SGOI (Silicon Germanium On Insulator), etc. In this embodiment, the substrate 1 is a bulk silicon substrate.

[0050] The gas injection needle 6 can inject a gas precursor toward the side of the chip substrate 1 at a first angle A, so as to subsequently decompose the gas precursor to deposit the metal 4 on the side of the chip substrate 1 .

[0051] For example, the gas injection needle 6 can inject the gas precursor horizontally toward the side of the chip substrate 1 to ensure that the gas precursor can be injected exactly onto the side of the chip substrate 1 , facilitating the subsequent deposition of the metal 4 on the side of the chip substrate 1 .

[0052] At the same time, the embodiment of the present application can also use a focused ion beam device 5 to emit an ion beam at a second angle B to the side of the chip substrate 1, so as to use the ion beam to bombard and decompose the gas precursor to deposit metal 4 at the target position on the side of the chip substrate 1; the above-mentioned first angle A and second angle B are both angles relative to the plane where the side of the chip substrate 1 is located.

[0053] Then, the surface charge of the chip is eliminated by grounding the metal 4, that is, the embodiment of the present application decomposes the gas precursor by ion beam bombardment to deposit the metal 4 at the target position on the side of the chip substrate 1, and the chip substrate 1 and the ground are connected by the metal 4, so that the charge on the chip surface during the chip circuit repair process can be derived and eliminated, thereby avoiding chip image deformity and drift and improving the accuracy of circuit repair.

[0054] Optionally, the first angle A may be greater than 0°, and the second angle B may also be greater than 0°. Therefore, in the embodiment of the present application, by not emitting the ion beam parallel to the side of the chip substrate 1, the situation where the metal 4 cannot be deposited on the side of the chip substrate 1 is avoided. At the same time, the chip substrate 1 is grounded through the metal 4, so that the charge on the chip surface during the chip circuit repair process can be eliminated, the chip image is avoided from being deformed and drifted, and the accuracy of the circuit repair is improved. In addition, the embodiment of the present application does not perform destructive grounding treatment on the chip structure by the way of deriving the chip surface charge, which can ensure the integrity of the chip electrical performance, and the chip can continue to be used for subsequent circuit editing.

[0055] Specifically, since the focused ion beam device 5 is generally fixed, it means that the direction of the ion beam is also fixed. Figure 4 As shown, it is a schematic diagram of another chip surface charge elimination device provided by an embodiment of the present application. If the side of the chip substrate 1 is placed parallel to the ion beam, the ion beam may not be emitted to the side of the chip substrate 1, and the metal 4 generated by the ion beam bombarding the gas precursor cannot be deposited on the side of the chip substrate 1, and the effect of eliminating the charge accumulated in the chip circuit repair process is not good.

[0056] See also Figure 3 As shown, in a possible implementation, the method for eliminating chip surface charge provided in the embodiment of the present application may also include: fixing the bottom surface of the chip substrate 1 on the conductive transfer base plate 3 by hot melt adhesive 2, and before spraying the gas precursor, rotating the conductive transfer base plate 3 to a third angle, wherein the third angle is the angle between the bottom surface of the chip substrate 1 and the vertical direction.

[0057] Therefore, in the embodiment of the present application, the position of the chip sample is actually adjusted, that is, the angle C between the bottom surface of the chip substrate 1 and the vertical direction can be adjusted to be greater than or equal to 52.1° and less than or equal to 59.1°. For example, the angle C can be specifically 53°, 54°, 55°, 56°, 57°, 58°, 59°, etc. Thus, the focused ion beam device 5 emits an ion beam at a second angle B to the side of the chip substrate 1. Since the angle between the second angle B and the side of the chip substrate 1 is greater than 0°, the metal 4 generated by the ion beam bombarding the gas precursor can be deposited on the side of the chip substrate 1. In addition, since the detector (not shown in the figure) in the chip circuit repair is in the vertical direction, if the angle C between the bottom surface of the chip substrate 1 and the vertical direction is too large, such as angle C greater than 59.1°, the ion beam is easy to sputter onto the detector, affecting the observation of the circuit repair; if the angle C between the bottom surface of the chip substrate 1 and the vertical direction is too small, such as angle C less than 52.1°, the deposition effect of the metal 4 cannot be guaranteed, which may cause the resistance of the conductive metal wire formed by the deposition to be too large, which is not conducive to the transmission of charge. Therefore, the angle C between the bottom surface of the chip substrate 1 and the vertical direction is set to be greater than or equal to 52.1° and less than or equal to 59.1°.

[0058] In another embodiment, in order to ensure a better metal deposition effect, reduce the resistance of the conductive metal wire formed by metal deposition, and reduce the impact of the ion beam on other equipment, the third angle C can be set to be greater than or equal to 55° and less than or equal to 57°. For example, the third angle C can be preferentially set to 56°.

[0059] The detector generally maintains a working distance of 4-6 mm relative to the chip sample, and by setting the angle C, the chip sample, the detector and the gas injection needle 6 do not contact each other during the chip circuit repair process, thereby ensuring the safety of the equipment and the chip.

[0060] See also Figure 5 As shown, it is an electron microscope photograph of a chip surface charge elimination device provided in an embodiment of the present application. The chip substrate 1 is connected to the conductive transfer base plate 3 along the surface of the hot melt adhesive 2 through the metal 4. The conductive transfer base plate 3 is grounded. The metal 4 can eliminate the charge on the chip surface through the metal 4.

[0061] See also Figure 6 As shown, it is an electron microscope photograph of another chip surface charge elimination device provided in an embodiment of the present application, which further shows the position of the gas injection needle 6 provided in an embodiment of the present application. The chip substrate 1 is connected to the conductive transfer base plate 3 along the surface of the hot melt adhesive 2 through the metal 4, and the conductive transfer base plate 3 is grounded. The metal 4 can eliminate the charge on the chip surface through the metal 4.

[0062] In one possible implementation, see Figure 7 As shown, it is a schematic diagram of another chip surface charge elimination device provided in an embodiment of the present application. The method provided in the embodiment of the present application may also include: forming at least one linear groove 41 on the surface and side of the hot melt adhesive 2; adjusting the emission position of the ion beam to deposit metal 4 in the linear groove 41 to form a conductive metal wire, one end of the conductive metal wire is connected to the side of the chip substrate 1, and the other end is connected to the conductive transfer base plate 3.

[0063] Therefore, in the embodiment of the present application, a linear groove 41 is formed to define the formation position and shape of the conductive metal line, so as to accurately deposit the metal 4 and effectively connect the chip substrate 1 and the conductive transfer base plate 3.

[0064] In a possible implementation, the ion beam provided in the embodiment of the present application may include a Ga ion beam, and the convergence degree of the ion beam may be greater than or equal to -50 μm and less than or equal to 50 μm. The embodiment of the present application can improve the accuracy of deposition by setting the convergence degree of the ion beam to be higher, so that the metal can be accurately deposited to the target position, and the deposited metal 4 is denser, so as to have good electrical conductivity and not easy to break.

[0065] At the same time, the chip substrate 1 provided in the embodiment of the present application is fixed on the conductive transfer base plate 3 using hot melt adhesive 2, and is generally grounded by the conductive transfer base plate 3. In the circuit repair process of the chip failure analysis, the chip is fixed using hot melt adhesive 2, which facilitates the placement of the chip, and the hot melt adhesive 2 is a polymer material that can transmit infrared light. The analyzed chip can continue to be used in the optical emission microscope in the failure analysis to capture infrared light, and then locate the abnormal transistor.

[0066] For example, the conductive transfer base plate 3 can be grounded by attaching conductive carbon glue on the sample stage, and the conductive transfer base plate 3 can be fixed on the conductive carbon glue using copper glue to achieve grounding of the conductive transfer base plate 3 during the chip circuit repair process, so as to effectively perform chip failure analysis.

[0067] Also, see Figure 3 As shown, the metal 4 provided in the embodiment of the present application can also be deposited on the hot melt adhesive 2 and the conductive transfer base plate 3 to achieve grounding, and the position of the chip can be appropriately adjusted to achieve smooth deposition of the metal 4.

[0068] In a possible implementation, the repeatability of the pattern of the metal 4 deposition provided in the embodiment of the present application may be greater than or equal to -200% and less than or equal to -150%. The embodiment of the present application sets the layout repeatability of the metal 4 deposition to be low, thereby avoiding repeated deposition of the metal 4 at the same position, improving the accuracy of the metal 4 deposition, completing the deposition of the metal 4 as quickly as possible, and improving the preparation efficiency of the chip surface charge elimination structure in circuit repair.

[0069] Generally speaking, the deposition time of the metal 4 can be controlled within ten minutes to form a firm, conductive and unbroken microscopic metal wire on the side of the chip substrate 1. In order to ensure that the charge in the chip failure analysis circuit repair process is smoothly led out from the chip surface, in a possible implementation, the resistance of the metal 4 can be set to be less than 100Ω, that is, the resistance of the conductive metal wire formed at the third angle is less than 100Ω, so as to have good conductivity.

[0070] In addition, in a possible implementation, the length of metal 4 can be set to be greater than or equal to 200 μm, that is, the length of the conductive metal wire is greater than or equal to 200 μm, and the thickness of metal 4 is greater than or equal to 10 μm. Setting a thicker metal 4 can effectively avoid the breakage of metal 4, especially the breakage at the corner contact between each film layer, such as the breakage at the contact between the chip substrate 1 and the hot melt adhesive 2. Setting a longer conductive metal wire can smoothly realize the grounding of the microscopic metal wire formed by metal 4, and smoothly eliminate the charge on the chip surface during the chip failure analysis circuit repair process. The width of metal 4 can be set to the nanometer level to adapt to the size of the side of the chip substrate 1.

[0071] Optionally, the metal 4 provided in the embodiment of the present application may include metals with good electrical conductivity such as Pt and / or W. The gas precursor may include C9H 16 Pt or W(CO)6. Thus, the gas precursor can be decomposed by ion beam bombardment to obtain the non-volatile metal 4 deposited on the side of the chip substrate 1, and the remaining volatile gas and other substances will volatilize without affecting the chip structure itself.

[0072] The embodiment of the present application provides a method for eliminating charge on the chip surface, the method comprising: using a gas jet needle to spray a gas precursor at a first angle to the side of the chip substrate; using a focused ion beam device to emit an ion beam at a second angle to the side of the chip substrate, so as to use the ion beam to bombard and decompose the gas precursor to deposit metal at a target position on the side of the chip substrate; the first angle and the second angle are both angles relative to the plane where the side of the chip substrate is located; and using metal grounding to eliminate the charge on the chip surface. The present application uses ion beam bombardment to decompose the gas precursor to deposit metal at a target position on the side of the chip substrate, and connects the chip substrate and the ground through metal, so that the charge on the chip surface during the chip circuit repair process can be derived and eliminated, avoiding chip image deformity and drift, and improving the accuracy of circuit repair.

[0073] Exemplary Structure

[0074] See also Figure 3 FIG. 1 is a schematic diagram of a chip surface charge elimination device using the above-mentioned method provided in an embodiment of the present application, wherein the device comprises:

[0075] A conductive transfer base plate 3, and a hot melt adhesive 2 located on the conductive transfer base plate 3;

[0076] The chip comprises a chip substrate 1; the bottom surface of the chip substrate 1 is located on the side surface of the hot melt adhesive 2 away from the conductive transfer base plate 3; a conductive metal wire 4 (ie, metal 4) is deposited on the side of the chip substrate 1;

[0077] At least one conductive metal wire 4 is located on the side surface of the chip substrate 1 and the surface of the hot melt adhesive 2 , and the conductive metal wire 4 connects the substrate side surface 1 and the conductive transfer base plate 3 .

[0078] Therefore, in the embodiment of the present application, the chip substrate 1 and the conductive transfer base plate 3 are connected by the conductive metal wire 4, and the conductive transfer base plate 3 is grounded, so that the charge on the chip surface during the chip circuit repair process can be guided out and eliminated.

[0079] The chip substrate 1 provided in the embodiment of the present application is fixed on the conductive transfer base plate 3 using hot melt adhesive 2, and is generally grounded by the conductive transfer base plate 3. In the circuit repair process of the chip failure analysis, the chip is fixed using hot melt adhesive 2, which facilitates the placement and removal of the chip. The hot melt adhesive 2 is a polymer material that can transmit infrared light. The analyzed chip can continue to be used in the optical emission microscope in the failure analysis to capture infrared light, thereby locating abnormal transistors.

[0080] For example, the conductive transfer base plate 3 can be grounded by attaching conductive carbon glue on the sample stage, and the conductive transfer base plate 3 can be fixed on the conductive carbon glue using copper glue to achieve grounding of the conductive transfer base plate 3 during the chip circuit repair process, so as to effectively perform chip failure analysis.

[0081] Also, see Figure 3 As shown, the conductive metal wire 4 provided in the embodiment of the present application can also be deposited on the hot melt adhesive 2 and the conductive transfer base plate 3 to achieve grounding, and the position of the chip can be appropriately adjusted to achieve smooth deposition of the conductive metal wire 4.

[0082] The chip substrate 1 provided in the embodiment of the present application may be a semiconductor substrate, for example, a Si substrate, a Ge substrate, a SiGe substrate, SOI (Silicon On Insulator) or GOI (Germanium On Insulator), etc. In other embodiments, the semiconductor substrate may also be a substrate including other element semiconductors or compound semiconductors, such as GaAs, InP or SiC, etc., and may also be a stacked structure, such as Si / SiGe, etc., and may also be other epitaxial structures, such as SGOI (Silicon Germanium On Insulator), etc. In this embodiment, the substrate 1 is a bulk silicon substrate.

[0083] In one possible implementation, see Figure 7 As shown, a linear groove 41 is provided on the surface of the hot melt adhesive 2 , and the conductive metal wire 4 is located in the linear groove 41 .

[0084] Therefore, in the embodiment of the present application, a linear groove 41 is formed to limit the formation position and shape of the conductive metal wire 4, so as to accurately deposit the conductive metal wire 4 and effectively connect the chip substrate 1 and the conductive transfer base plate 3.

[0085] In a possible implementation, the length of the conductive metal wire 4 provided in the embodiment of the present application is greater than or equal to 200 μm, and the thickness of the metal is greater than or equal to 10 μm.

[0086] Setting a thicker metal 4 can effectively avoid the breakage of the metal 4, especially the breakage at the corner contact between each film layer, such as the breakage at the contact between the chip substrate 1 and the hot melt adhesive 2. Setting a longer conductive metal wire 4 can smoothly realize the grounding of the microscopic metal wire formed by the conductive metal wire 4, and smoothly eliminate the charge on the chip surface during the chip failure analysis circuit repair process. The width of the metal 4 can be set to the nanometer level to adapt to the size of the side of the chip substrate 1.

[0087] Optionally, the metal 4 provided in the embodiment of the present application may include metals with good conductive properties such as Pt and / or W and / or Co.

[0088] The embodiment of the present application provides a device for eliminating charges on the surface of a chip, the device comprising: a conductive transfer base plate, and a hot melt adhesive located on the conductive transfer base plate; a chip, including a chip substrate; the bottom surface of the chip substrate is located on the side surface of the hot melt adhesive away from the conductive transfer base plate; a conductive metal wire is deposited on the side of the chip substrate; at least one conductive metal wire is located on the side of the chip substrate and the surface of the hot melt adhesive, and the conductive metal wire connects the side of the substrate and the conductive transfer base plate. The present application connects the chip substrate and the ground through metal, so that the charges on the surface of the chip can be eliminated during the chip circuit repair process, thereby avoiding charge accumulation, avoiding chip image deformity and drift, and improving the accuracy of circuit repair. At the same time, the embodiment of the present application does not perform destructive grounding treatment on the chip structure in the way of extracting the charges on the chip surface, which can ensure the integrity of the chip's electrical performance, and the chip can continue to be used for subsequent circuit editing.

[0089] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the structural embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0090] The above is only a preferred implementation of the present application. Although the present application has been disclosed as a preferred embodiment, it is not intended to limit the present application. Any technician familiar with the art can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the present application without departing from the scope of the technical solution of the present application, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent change and modification made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application still falls within the scope of protection of the technical solution of the present application.

Claims

1. A method for eliminating charge on a chip surface, characterized in that: include: Using a gas injection needle to inject a gas precursor toward the side of the chip substrate at a first angle; Using a focused ion beam device to emit an ion beam at a second angle toward the side of the chip substrate, so as to use the ion beam to bombard and decompose the gas precursor, so as to deposit metal at a target position on the side of the chip substrate; the first angle and the second angle are both angles relative to the plane where the side of the chip substrate is located; The metal grounding is used to eliminate the surface charge of the chip.

2. The method according to claim 1, characterized in that The method also includes: fixing the bottom surface of the chip substrate on the conductive transfer base plate by hot melt adhesive, and rotating the conductive transfer base plate to a third angle before spraying the gas precursor, wherein the third angle is the angle between the bottom surface of the chip substrate and the vertical direction.

3. The method according to claim 2, characterized in that The method also includes: forming at least one linear groove on the surface and side of the hot melt adhesive; adjusting the emission position of the ion beam to deposit metal in the linear groove to form a conductive metal wire, one end of the conductive metal wire is connected to the side of the chip substrate, and the other end is connected to the conductive transfer base plate.

4. The method according to claim 3, characterized in that The third angle is [52.1°, 59.1°], and the resistance of the conductive metal wire formed at the third angle is less than 100Ω.

5. The method according to any one of claims 1 to 3, characterized in that: The ion beam includes a Ga ion beam; the convergence degree of the ion beam is [-50 μm, 50 μm]; and the pattern repeatability of the metal deposition is [-200%, -150%].

6. The method according to any one of claims 1 to 3, characterized in that: The metal includes Pt and / or W.

7. The method according to any one of claims 1 to 3, characterized in that: The gas precursor includes C9H 16 Pt or W(CO)6.

8. A chip surface charge elimination device using the method according to any one of claims 1 to 7, characterized in that: The device comprises: A conductive transfer base plate, and hot melt adhesive on the conductive transfer base plate; The chip comprises a chip substrate; the bottom surface of the chip substrate is located on a side surface of the hot melt adhesive away from the conductive transfer base plate; and a conductive metal wire is deposited on a side surface of the chip substrate; At least one conductive metal wire is located on the side of the chip substrate and the surface of the hot melt adhesive, and the conductive metal wire connects the side of the substrate and the conductive transfer base plate.

9. The device according to claim 8, characterized in that The surface of the hot melt adhesive is provided with a linear groove, and the conductive metal wire is located in the linear groove.

10. The device according to claim 8 or 9, characterized in that The length of the conductive metal wire is greater than or equal to 200 μm, and the thickness of the metal is greater than or equal to 10 μm.

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