Full-color Micro-LED screen body structure and manufacturing method

Abstract

The invention discloses a full-color Micro-LED screen body structure and a manufacturing method. The full-color Micro-LED screen body structure comprises a second substrate; a bonding layer is arranged on the second substrate; a third light-emitting layer is arranged on the bonding layer; a second light-emitting layer is arranged on the third light-emitting layer through a tunnel junction layer; a first light-emitting layer is arranged on the second light-emitting layer through a tunnel junction layer; a first electrode is arranged at the upper end of the first light-emitting layer; a second electrode is arranged on one side of the tunnel junction layer between the first light-emitting layer and the second light-emitting layer; a third electrode is arranged on one side of the tunnel junction layer between the second light-emitting layer and the third light-emitting layer; a fourth electrode is arranged between the third light-emitting layer and the bonding layer; the light-emitting layers are arranged in a manner of vertical growth of the multi-color epitaxial layer, and each light-emitting layer is independently controlled through a plurality of electrode structures, so that a single pixel in the vertical direction can emit light of different colors, the service life is longer, the thermal stability is higher, the product reliability is improved, and the enterprise competitiveness is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a full-color Micro-LED screen structure and a manufacturing method thereof. Background Art

[0002] In the existing micro-display Micro-Led technology, CMOS wafers are integrated with LED pixels to achieve a high ppi Micro-Led screen. In order to prepare a single full-color screen, quantum dot color conversion is usually used to convert LED pixels of a single luminous color into multiple colors. However, quantum dot technology has problems such as low lifespan and poor thermal stability, which makes it impossible to achieve a high-life, high-brightness full-color Micro-Led screen.

[0003] In order to solve the above problems, a full-color Micro-LED screen structure and manufacturing method were developed and designed. Summary of the invention

[0004] The purpose of the present invention is to provide a full-color Micro-LED screen structure and a manufacturing method to solve the problems of short service life and poor thermal stability of existing Micro-Led screens.

[0005] In order to solve the above technical problems, the technical solution adopted by the present invention is: A full-color Micro-LED screen structure, comprising: a second substrate; A bonding layer is provided on the second substrate; A third light-emitting layer is disposed on the bonding layer; A second light-emitting layer is disposed on the third light-emitting layer via a tunnel junction layer; A first light-emitting layer is disposed on the second light-emitting layer via a tunnel junction layer; The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are stacked in sequence; A first electrode is provided on the upper end of the first light-emitting layer; A second electrode is provided on one side of the tunnel junction layer between the first light-emitting layer and the second light-emitting layer; A third electrode is provided on one side of the tunnel junction layer between the second light-emitting layer and the third light-emitting layer; A fourth electrode is disposed between the third light-emitting layer and the bonding layer.

[0006] In a preferred embodiment, the first light-emitting layer, the second light-emitting layer and the third light-emitting layer all include an N-GaN layer, an MQW layer and a P-GaN layer stacked in sequence; the MQW layer is arranged between the N-GaN layer and the P-GaN layer.

[0007] In a preferred solution, in the first light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å.

[0008] Preferably, in the second light-emitting layer, the thickness of the N-GaN layer is controlled within 1-2 μm, the thickness of the MQW layer is controlled within 300-5000 Å, and the thickness of the P-GaN layer is controlled within 300-5000 Å.

[0009] Preferably, in the third light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å.

[0010] Preferably, the thickness of the tunnel junction layer is controlled within a range of 100-1000 Å.

[0011] In addition, the present application also proposes a method for manufacturing a full-color Micro-LED screen structure, comprising the following steps: S1, preparing a first substrate as an epitaxial substrate, and vertically growing three-color epitaxial layers, including a U-GaN layer, a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer generated on the first substrate; and providing a tunnel junction layer between the first light-emitting layer and the second light-emitting layer and between the second light-emitting layer and the third light-emitting layer; S2, bonding the three-color epitaxial layer on the first substrate to the second substrate by full-surface metal bonding, removing the first substrate, and transferring the three-color epitaxial layer to the second substrate; S3, firstly removing the entire surface of the U-GaN layer on the second substrate; S4, preparing the electrode position area of ​​the first light-emitting layer by photolithography patterning and etching and resist removal process; S5, preparing the electrode position area of ​​the second light-emitting layer by photolithography patterning and etching and resist removal process; S6, preparing the electrode position area of ​​the third light-emitting layer by photolithography patterning and etching and resist removal process; S7, making electrode contact points in the electrode position regions of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer, namely, the first electrode, the second electrode, the third electrode and the fourth electrode; S8, the first electrode serves as the upper electrode of the first light-emitting layer; through the action of the tunnel junction layer, the second electrode serves as both the lower electrode of the first light-emitting layer and the upper electrode of the second light-emitting layer; the third electrode serves as both the lower electrode of the second light-emitting layer and the upper electrode of the third light-emitting layer; the fourth electrode serves as the lower electrode of the third light-emitting layer; S9, respectively providing voltages between the first electrode and the second electrode, the second electrode and the third electrode, and the third electrode and the fourth electrode to operate the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer; S10, after the first light-emitting layer, the second light-emitting layer and the third light-emitting layer are working and are individually controlled by the driving circuit, a full-color Micro-LED screen structure can be formed.

[0012] In a preferred solution, in step S1, the first substrate includes but is not limited to a sapphire or silicon substrate; The three-color epitaxial layers are vertically grown using methods including but not limited to MOCVD.

[0013] Preferably, in step S1, when preparing the U-GaN layer, its thickness is controlled to be 1-4 μm.

[0014] Preferably, in step S1, the first light-emitting layer, the second light-emitting layer and the third light-emitting layer all include an N-GaN layer, an MQW layer and a P-GaN layer; Wherein, when preparing the first light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å; When preparing the second light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å; When preparing the third light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å; When preparing the tunnel junction layer, its thickness is controlled within 100-1000 Å.

[0015] Due to the application of the above technical solution, the beneficial effects of the present application compared with the prior art are: The present application provides a full-color Micro-LED screen structure and a manufacturing method. The light-emitting layer in the full-color Micro-LED screen structure is arranged by vertically growing a multi-color epitaxial layer, and each light-emitting layer is individually controlled by a plurality of electrode structures, so that a single vertical pixel can emit light of different colors, thereby realizing a single full-color screen. Compared with the prior art, the direct light emission of the Micro-LED screen has a higher lifespan and thermal stability, which greatly improves the reliability of the product, improves production efficiency, meets the production needs of the enterprise, and enhances the competitiveness of the enterprise. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 It is a structural schematic diagram of a full-color Micro-LED screen structure of the present invention; Figure 2 Schematic diagram of the structure of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer of the present invention; Figure 3 It is a flow chart of a method for manufacturing a full-color Micro-LED screen structure of the present invention; Figure 4 It is a structural schematic diagram of step S1 in the manufacturing method of embodiment 4 of the present invention; Figure 5 , Figure 6 It is a structural schematic diagram of step S2 in the manufacturing method of embodiment 4 of the present invention; Figure 7 It is a structural schematic diagram of step S3 in the manufacturing method of embodiment 4 of the present invention; Figure 8 It is a structural schematic diagram of step S4 in the manufacturing method of embodiment 4 of the present invention; Fig. 9 It is a structural schematic diagram of step S5 in the manufacturing method of embodiment 4 of the present invention; Fig.10 It is a structural schematic diagram of step S6 in the manufacturing method of embodiment 4 of the present invention; Fig.11 It is a structural schematic diagram of step S7 in the manufacturing method of embodiment 4 of the present invention; Among them, 1. second substrate; 2. bonding layer; 3. third light-emitting layer; 4. second light-emitting layer; 5. first light-emitting layer; 6. tunnel junction layer; 7. first electrode; 8. second electrode; 9. third electrode; 10. fourth electrode; 11. N-GaN layer; 12. MQW layer; 13. P-GaN layer. DETAILED DESCRIPTION

[0018] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0019] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0020] In the present application, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings. These terms are mainly used to better describe the present invention and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific orientation, or to be constructed and operated in a specific orientation.

[0021] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those skilled in the art, the specific meanings of these terms in the present invention can be understood according to specific circumstances.

[0022] In addition, the terms "installed", "set", "provided with", "connected", "connected", and "socketed" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0023] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0024] Embodiment 1 See also Figure 1 , the present application provides a full-color Micro-LED screen structure, including: The second substrate 1 may be a sapphire or silicon substrate; A bonding layer 2 is provided on the second substrate 1; A third light-emitting layer 3 is provided on the bonding layer 2; A second light-emitting layer 4 is disposed on the third light-emitting layer 3 via a tunnel junction layer 6; A first light-emitting layer 5 is disposed on the second light-emitting layer 4 via a tunnel junction layer 6; The first light-emitting layer 5, the second light-emitting layer 4 and the third light-emitting layer 3 are stacked in sequence; The first light-emitting layer 5, the second light-emitting layer 4 and the third light-emitting layer 3 all include an N-GaN layer 11, an MQW layer 12 and a P-GaN layer 13 which are stacked in sequence; the MQW layer 12 is arranged between the N-GaN layer 11 and the P-GaN layer 13; in the first light-emitting layer 5, the thickness of the N-GaN layer 11 is controlled to be 1 μm, the thickness of the MQW layer 12 is controlled to be 300A, and the thickness of the P-GaN layer 13 is controlled to be 300A; in the second light-emitting layer 4, the thickness of the N-GaN layer 11 is controlled to be 1 μm, the thickness of the MQW layer 12 is controlled to be 300A, and the thickness of the P-GaN layer 13 is controlled to be 300A; in the third light-emitting layer 3, the thickness of the N-GaN layer 11 is controlled to be 1 μm, the thickness of the MQW layer 12 is controlled to be 300A, and the thickness of the P-GaN layer 13 is controlled to be 300A; the thickness of the tunnel junction layer 6 is controlled to be 100A; A first electrode 7 is disposed on the upper end of the first light-emitting layer 5; A second electrode 8 is provided on one side of the tunnel junction layer 6 between the first light-emitting layer 5 and the second light-emitting layer 4; A third electrode 9 is provided on one side of the tunnel junction layer 6 between the second light-emitting layer 4 and the third light-emitting layer 3; A fourth electrode 10 is provided between the third light emitting layer 3 and the bonding layer 2; When the overall structure is in forward bias, the tunnel junction layer 6 between the first light-emitting layer 5 and the second light-emitting layer 4 and between the second light-emitting layer 4 and the third light-emitting layer 3 becomes reverse biased, and electrons can tunnel from the valence band of the P-GaN layer 13 to the conduction band of the N-GaN layer 11, while serving as the P pole of the lower light-emitting layer and the N pole of the upper light-emitting layer.

[0025] Embodiment 2 According to the above-mentioned embodiment 1, in the first light-emitting layer 5, the thickness of the N-GaN layer 11 is controlled at 1.5 μm, the thickness of the MQW layer 12 is controlled at 2650A, and the thickness of the P-GaN layer 13 is controlled at 2650A; in the second light-emitting layer 4, the thickness of the N-GaN layer 11 is controlled at 1.5 μm, the thickness of the MQW layer 12 is controlled at 2650A, and the thickness of the P-GaN layer 13 is controlled at 2650A; in the third light-emitting layer 3, the thickness of the N-GaN layer 11 is controlled at 1.5 μm, the thickness of the MQW layer 12 is controlled at 2650A, and the thickness of the P-GaN layer 13 is controlled at 2650A; the thickness of the tunnel junction layer 6 is controlled at 550A.

[0026] Embodiment 3 According to the above-mentioned embodiment 1, in the first light-emitting layer 5, the thickness of the N-GaN layer 11 is controlled at 2 μm, the thickness of the MQW layer 12 is controlled at 5000A, and the thickness of the P-GaN layer 13 is controlled at 5000A; in the second light-emitting layer 4, the thickness of the N-GaN layer 11 is controlled at 2 μm, the thickness of the MQW layer 12 is controlled at 5000A, and the thickness of the P-GaN layer 13 is controlled at 5000A; in the third light-emitting layer 3, the thickness of the N-GaN layer 11 is controlled at 2 μm, the thickness of the MQW layer 12 is controlled at 5000A, and the thickness of the P-GaN layer 13 is controlled at 5000A; the thickness of the tunnel junction layer 6 is controlled at 1000A.

[0027] Based on the above embodiment, a further preferred solution also includes: In the first light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 3000-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-1000 Å; In the second light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 3000-5000 Å, and the thickness of the P-GaN layer is controlled to be 3000-5000 Å; In the third light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 1000-3000 Å, and the thickness of the P-GaN layer is controlled to be 1000-3000 Å.

[0028] Embodiment 4 Please refer to FIG. 3-13. In addition, the present application also proposes a method for manufacturing a full-color Micro-LED screen structure, including the following steps: S1, prepare a first substrate as an epitaxial substrate, the first substrate includes but is not limited to a sapphire or silicon substrate, and vertically grow three-color epitaxial layers using a method including but not limited to MOCVD, including a U-GaN layer, a first light-emitting layer 5, a second light-emitting layer 4 and a third light-emitting layer 3 generated on the first substrate; a tunnel junction layer 6 is respectively arranged between the first light-emitting layer 5 and the second light-emitting layer 4 and between the second light-emitting layer 4 and the third light-emitting layer 3; wherein, when preparing the U-GaN layer, its thickness is controlled to be 1-4 μm; the first light-emitting layer 5, the second light-emitting layer 4 and the third light-emitting layer 3 all include an N-GaN layer 11, an MQW layer 12 and a P-GaN layer 13; Wherein, when preparing the first light-emitting layer 5, the thickness of the N-GaN layer 11 is controlled to be 1-2 μm, the thickness of the MQW layer 12 is controlled to be 300-5000 Å, and the thickness of the P-GaN layer 13 is controlled to be 300-5000 Å; When preparing the second light-emitting layer 4, the thickness of the N-GaN layer 11 is controlled to be 1-2 μm, the thickness of the MQW layer 12 is controlled to be 300-5000 Å, and the thickness of the P-GaN layer 13 is controlled to be 300-5000 Å; When preparing the third light-emitting layer 3, the thickness of the N-GaN layer 11 is controlled to be 1-2 μm, the thickness of the MQW layer 12 is controlled to be 300-5000 Å, and the thickness of the P-GaN layer 13 is controlled to be 300-5000 Å; When preparing the tunnel junction layer 6, its thickness is controlled to be 100-1000A; Figure 4 As shown; Among them, UGaN is a compound material composed of indium (In), gallium (Ga) and nitrogen (N) elements; N-GaN is obtained by doping with Si, and P-GaN is obtained by doping with Mg; The MQW structure is a special semiconductor structure that contains multiple thin layers of semiconductor materials stacked alternately. The thickness of these thin layers is usually only a few nanometers. MQW refers to multiple quantum wells. A stands for Angstrom (Å), a unit of length equal to one-tenth of a nanometer.

[0029] S2, bonding the three-color epitaxial layer on the first substrate to the second substrate by full-surface metal bonding, removing the first substrate, and transferring the three-color epitaxial layer to the second substrate, such as Figure 5 and Figure 6 As shown; S3, first remove the U-GaN layer on the second substrate entirely, such as Figure 7 As shown; S4, through photolithography patterning and etching and stripping process, the electrode position area of ​​the first light-emitting layer 5 is prepared, such as Figure 8 As shown; S5, through photolithography patterning and etching and stripping process, the electrode position area of ​​the second light-emitting layer 4 is prepared, such as Fig. 9 As shown; S6, through photolithography patterning and etching and stripping process, the electrode position area of ​​the third light-emitting layer 3 is prepared, such as Fig.10 As shown; S7, electrode contact points are made in the electrode position areas of the first light-emitting layer 5, the second light-emitting layer 4 and the third light-emitting layer 3, namely the first electrode 7, the second electrode 8, the third electrode 9 and the fourth electrode 10, such as Fig.11 As shown; S8, the first electrode 7 serves as the upper electrode of the first light-emitting layer 5; through the action of the tunnel junction layer 6, the second electrode 8 serves as both the lower electrode of the first light-emitting layer 5 and the upper electrode of the second light-emitting layer 4; the third electrode 9 serves as both the lower electrode of the second light-emitting layer 4 and the upper electrode of the third light-emitting layer 3; the fourth electrode 10 serves as the lower electrode of the third light-emitting layer 3; S9, respectively providing voltages between the first electrode 7 and the second electrode 8, the second electrode 8 and the third electrode 9, and the third electrode 9 and the fourth electrode 10 to operate the first light-emitting layer 5, the second light-emitting layer 4 and the third light-emitting layer 3; S10, after the first light-emitting layer 5, the second light-emitting layer 4 and the third light-emitting layer 3 are working and are individually controlled by the driving circuit, a full-color Micro-LED screen structure can be formed.

[0030] The present application provides a full-color Micro-LED screen structure and a manufacturing method. The light-emitting layer in the full-color Micro-LED screen structure is arranged by vertically growing a multi-color epitaxial layer, and each light-emitting layer is individually controlled by a plurality of electrode structures, so that a single vertical pixel can emit light of different colors, thereby realizing a single full-color screen. Compared with the prior art, the direct light emission of the Micro-LED screen has a higher lifespan and thermal stability, which greatly improves the reliability of the product, improves production efficiency, meets the production needs of the enterprise, and enhances the competitiveness of the enterprise.

[0031] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments, or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A full-color Micro-LED screen structure, characterized in that: include: a second substrate; A bonding layer is provided on the second substrate; A third light-emitting layer is disposed on the bonding layer; A second light-emitting layer is disposed on the third light-emitting layer via a tunnel junction layer; A first light-emitting layer is disposed on the second light-emitting layer via a tunnel junction layer; The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are stacked in sequence; A first electrode is provided on the upper end of the first light-emitting layer; A second electrode is provided on one side of the tunnel junction layer between the first light-emitting layer and the second light-emitting layer; A third electrode is provided on one side of the tunnel junction layer between the second light-emitting layer and the third light-emitting layer; A fourth electrode is disposed between the third light-emitting layer and the bonding layer.

2. The full-color Micro-LED screen structure according to claim 1, characterized in that: The first light-emitting layer, the second light-emitting layer and the third light-emitting layer each include an N-GaN layer, an MQW layer and a P-GaN layer which are sequentially stacked; the MQW layer is arranged between the N-GaN layer and the P-GaN layer.

3. The full-color Micro-LED screen structure according to claim 2, characterized in that: In the first light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å.

4. The full-color Micro-LED screen structure according to claim 2, characterized in that: In the second light-emitting layer, the thickness of the N-GaN layer is controlled within 1-2 μm, the thickness of the MQW layer is controlled within 300-5000 Å, and the thickness of the P-GaN layer is controlled within 300-5000 Å.

5. The full-color Micro-LED screen structure according to claim 2, characterized in that: In the third light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å.

6. The full-color Micro-LED screen structure according to claim 1, characterized in that: The thickness of the tunnel junction layer is controlled within a range of 100-1000 Å.

7. A method for manufacturing a full-color Micro-LED screen structure, characterized in that: The steps include: S1, preparing a first substrate as an epitaxial substrate, and vertically growing three-color epitaxial layers, including a U-GaN layer, a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer generated on the first substrate; and providing a tunnel junction layer between the first light-emitting layer and the second light-emitting layer and between the second light-emitting layer and the third light-emitting layer; S2, bonding the three-color epitaxial layer on the first substrate to the second substrate by full-surface metal bonding, removing the first substrate, and transferring the three-color epitaxial layer to the second substrate; S3, firstly removing the entire surface of the U-GaN layer on the second substrate; S4, preparing the electrode position area of ​​the first light-emitting layer by photolithography patterning and etching and resist removal process; S5, preparing the electrode position area of ​​the second light-emitting layer by photolithography patterning and etching and resist removal process; S6, preparing the electrode position area of ​​the third light-emitting layer by photolithography patterning and etching and resist removal process; S7, making electrode contact points in the electrode position regions of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer, namely, the first electrode, the second electrode, the third electrode and the fourth electrode; S8, the first electrode serves as the upper electrode of the first light-emitting layer; through the action of the tunnel junction layer, the second electrode serves as both the lower electrode of the first light-emitting layer and the upper electrode of the second light-emitting layer; the third electrode serves as both the lower electrode of the second light-emitting layer and the upper electrode of the third light-emitting layer; the fourth electrode serves as the lower electrode of the third light-emitting layer; S9, respectively providing voltages between the first electrode and the second electrode, the second electrode and the third electrode, and the third electrode and the fourth electrode to operate the first light-emitting layer, the second light-emitting layer, and the third light-emitting layer; S10, after the first light-emitting layer, the second light-emitting layer and the third light-emitting layer are working and are individually controlled by the driving circuit, a full-color Micro-LED screen structure can be formed.

8. The method for manufacturing a full-color Micro-LED screen structure according to claim 7, characterized in that: In step S1, the first substrate includes but is not limited to a sapphire or silicon substrate; The three-color epitaxial layers are vertically grown using methods including but not limited to MOCVD.

9. The method for manufacturing a full-color Micro-LED screen structure according to claim 7, characterized in that: In step S1, when preparing the U-GaN layer, its thickness is controlled to be 1-4 μm.

10. The method for manufacturing a full-color Micro-LED screen structure according to claim 7, characterized in that: In step S1, the first light-emitting layer, the second light-emitting layer and the third light-emitting layer each include an N-GaN layer, an MQW layer and a P-GaN layer; Wherein, when preparing the first light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å; When preparing the second light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å; When preparing the third light-emitting layer, the thickness of the N-GaN layer is controlled to be 1-2 μm, the thickness of the MQW layer is controlled to be 300-5000 Å, and the thickness of the P-GaN layer is controlled to be 300-5000 Å; When preparing the tunnel junction layer, its thickness is controlled within 100-1000 Å.

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