Power supply module and charging equipment

Abstract

The invention provides a power supply module and charging equipment. The power module comprises a substrate, a power device and a radiator. The substrate comprises at least two conductive layers, the at least two conductive layers are stacked in the thickness direction of the substrate, and an insulating medium layer is arranged between any two adjacent conductive layers. The at least two conductive layers comprise a first conductive layer and a second conductive layer, and the first conductive layer and the second conductive layer are located on the two surfaces of the substrate in the thickness direction respectively. The power device is arranged on the surface, away from the second conductive layer, of the first conductive layer. The radiator is arranged on the surface, away from the first conductive layer, of the second conductive layer.

Description

Power modules and charging equipment Technical Field

[0001] The present application relates to the field of heat dissipation technology, and in particular to a power module and a charging device. Background Art

[0002] Surface mount technology (SMT) is a commonly used technique and process in the electronics assembly industry. Due to its high assembly density and reliable performance, SMT is used in electronic component assembly structures requiring high power density. For example, in power modules, SMD power devices contribute to increased power density. However, heat dissipation from SMD power devices has always been a challenge in product design. Product design requires a balance between performance and heat dissipation, while also considering the electromagnetic interference (EMI) of power devices.

[0003] Summary of the Invention

[0004] The present application provides a power module and a charging device. The power module has high heat dissipation efficiency and can also avoid electromagnetic interference problems caused by the radiator being charged.

[0005] In a first aspect, the present application provides a power module, which specifically includes a substrate, a power device, and a heat sink. The substrate is a multi-layer circuit board structure, specifically including at least two conductive layers, which are stacked along the thickness direction of the substrate, and an insulating dielectric layer is provided between any two adjacent conductive layers. Specifically, the at least two conductive layers include a first conductive layer and a second conductive layer, and the first conductive layer and the second conductive layer are respectively located on two surfaces in the thickness direction of the substrate. The power device is provided on the surface of the first conductive layer facing away from the second conductive layer using a patch process, which can reduce the structural volume and facilitate device miniaturization. The heat sink is provided on the surface of the second conductive layer facing away from the first conductive layer, which can fully utilize the space on the side of the substrate facing away from the power device, increase the heat exchange area of ​​the heat sink, and improve the heat dissipation efficiency. The heat generated by the power device can be transferred to the heat sink through the substrate, and the heat sink then transfers the heat to the outside through heat exchange. In addition, the insulating dielectric layer in the substrate can be used to isolate the second conductive layer from the other conductive layers to prevent the heat sink from being charged.

[0006] In the above-mentioned power module, the power device and the heat sink are integrated on both sides of the substrate in the thickness direction. The heat emitted by the power device can be transferred to the heat sink through the substrate and dissipated through the heat sink. The power device is soldered on the substrate using mounting technology, which can improve space utilization. The heat sink and the power device are respectively located on both sides of the substrate in the thickness direction, so that the heat sink can have a larger volume to improve the heat dissipation efficiency. In addition, a dielectric layer is provided between the two adjacent conductive layers in the substrate, and the dielectric layer can be used to ground the heat sink to prevent the heat sink from being charged and causing electromagnetic interference problems.

[0007] In some possible implementations, the at least two conductive layers further include at least one intermediate conductive layer disposed between the first conductive layer and the second conductive layer. The second conductive layer is insulated from the intermediate conductive layer closest to the second conductive layer to ensure electrical insulation of a heat sink connected to the second conductive layer.

[0008] Specifically, along the direction from the second conductive layer to the first conductive layer, there are no metal vias in the insulating dielectric layer between the second conductive layer and the intermediate conductive layer closest to the second conductive layer, so that the second conductive layer and the intermediate layer closest to the second conductive layer are insulated from each other, and the heat sink is insulated from other conductive layers except the second conductive layer.

[0009] In some possible implementations, under the premise that the thermal conductivity of the conductive layer is higher than that of the insulating dielectric layer, in order to increase the heat transfer rate, the other conductive layers except the second conductive layer can be connected through metal vias. In the at least one intermediate conductive layer and the first conductive layer, a metal via is provided between any two adjacent conductive layers, and the metal via specifically penetrates the insulating dielectric layer between the two conductive layers. The metal via can quickly conduct heat from one conductive layer to another conductive layer. The metal via can be realized by filling the hole with metal material, or by electroplating the conductive layer on the inner wall of the hole. In order to improve the heat dissipation efficiency, the metal vias on different insulating dielectric layers can be roughly corresponding along the thickness direction of the substrate, so that the heat dissipation path extends basically along the thickness direction of the substrate, and the metal via is on the heat dissipation path of heat transfer. Such a structure can shorten the heat dissipation path as much as possible and improve the heat dissipation rate.

[0010] To simplify the manufacturing process, metal vias on different insulating dielectric layers can be formed through a single punching operation. For example, a metal via can extend from the first conductive layer to the intermediate conductive layer closest to the second conductive layer. Alternatively, each intermediate conductive layer can be connected via a first metal via, while the first conductive layer and the intermediate conductive layer closest to the first conductive layer can be connected via a second metal via. In this case, the first metal via and the second metal via do not need to correspond along the thickness of the substrate.

[0011] In one possible implementation, the heat sink and substrate are connected via multiple thermal pads, with gaps between adjacent thermal pads. This prevents heat sink deformation from affecting the reliability and stability of the connection between the power device and the substrate. The power device includes a control electrode, which can specifically be a gate. The orthographic projection of the soldering location between the control electrode and the first conductive layer on the second conductive layer does not overlap with the orthographic projection of any thermal pad on the second conductive layer. In other words, the connection location between the control electrode and the first conductive layer avoids the location of the heat sink's thermal pads, which helps improve device reliability.

[0012] The power device also includes connecting electrodes, which can specifically be source and drain electrodes. To shorten the heat dissipation path, the heat dissipation pad, metal vias, and connecting electrodes can be aligned along the thickness of the substrate. This ensures that when heat dissipated by the power device is transferred to the heat sink, the heat dissipation path remains parallel to the thickness of the substrate as much as possible, achieving rapid heat dissipation.

[0013] The power module provided herein also includes a capacitor. The capacitor can be disposed on a surface of the first conductive layer facing away from the second conductive layer, or can be embedded in the substrate. The capacitor can form a power conversion circuit with the power device through the first conductive layer. During operation, the power conversion circuit can convert current from the power supply and supply it to the power-consuming device.

[0014] In a second aspect, the present application provides a charging device, which may specifically be a charging pile, a charger, or other device. The charging device includes at least one charging interface and at least one power module provided in the first aspect above. The input end of the charging interface is used to connect to the output end of the power module; the output end of the charging interface is used to connect to an electrical device to transmit the current output by the power module to the electrical device. The connection relationship between the power module and the charging interface is not limited. Each power module can be connected to a charging interface one-to-one, or each power module can be connected to one or more charging interfaces. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] FIG1 is a schematic structural diagram of a power supply module provided in an embodiment of the present application;

[0016] FIG2a is a schematic structural diagram of a power module provided in an embodiment of the present application;

[0017] FIG2b is a schematic diagram of a heat dissipation path of the power module shown in FIG2a;

[0018] FIG3a is a schematic structural diagram of a power module provided in an embodiment of the present application;

[0019] FIG3 b is a schematic diagram of a heat dissipation path of the power module shown in FIG3 a ;

[0020] FIG4 a is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0021] FIG4 b is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0022] FIG5a is a schematic structural diagram of a power supply module provided in an embodiment of the present application;

[0023] FIG5b is a schematic diagram of a heat dissipation path of the power module shown in FIG5a;

[0024] FIG6 is a schematic structural diagram of a power module provided in an embodiment of the present application;

[0025] FIG7 a is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0026] FIG7 b is a schematic structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0027] FIG7 c is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0028] FIG8 is a schematic structural diagram of a power supply module provided in an embodiment of the present application;

[0029] FIG9 a is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0030] FIG9 b is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0031] FIG9c is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0032] FIG9 d is a structural diagram of a substrate preparation process of a power module provided in an embodiment of the present application;

[0033] FIG10a is a schematic structural diagram of a power module provided in an embodiment of the present application;

[0034] FIG10b is a schematic structural diagram of a power supply module provided in an embodiment of the present application;

[0035] FIG11a is a schematic structural diagram of a power module provided in an embodiment of the present application;

[0036] FIG11b is a schematic structural diagram of a power module provided in an embodiment of the present application;

[0037] FIG12 is a schematic diagram of a power conversion circuit of a power module provided in an embodiment of the present application;

[0038] FIG13a is a schematic diagram of a charging device provided in an embodiment of the present application;

[0039] Figure 13b is a schematic diagram of a charging device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0040] In the field of power electronics, high-density power can be achieved by assembling power devices through surface mount technology. Taking power modules as an example, as the power consumption of equipment such as servers continues to increase, power modules are gradually moving towards higher frequencies and planar magnetic components to increase the power density of power modules. Specifically, surface mount power devices can be used to increase the power density of power modules. The heat dissipation pads of surface mount power devices in power modules are high-voltage, high-frequency network dynamic points. If a heat sink is directly connected to the heat dissipation pad, this heat dissipation method will cause serious safety issues. To avoid safety issues, sufficient space for heat dissipation needs to be reserved, but this conflicts with the design of high power density. In addition, if the heat sink is energized, electromagnetic interference (EMI) will be generated. Therefore, electrical isolation of the heat sink is also required during the device heat dissipation process.

[0041] Based on this, an embodiment of the present application provides a power module and a charging device. The power module has the advantages of small size and high heat dissipation efficiency, and can avoid electromagnetic interference problems caused by the radiator being charged.

[0042] In order to more clearly describe the technical solutions of the embodiments of the present application, the power module and charging device provided in the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0043] As shown in FIG1 , the power module 10 provided in an embodiment of the present application may specifically include a substrate 1, a power device 2, and a heat sink 3. The power device 2 may specifically be any one of a metal oxide semiconductor field effect transistor (MOSFET), an insulated gate bipolar transistor (IGBT), a diode, gallium nitride (GaN), and silicon carbide (SiC), or a combination of at least two thereof. Taking a metal oxide field effect transistor as an example, the power device 2 generates heat during operation. In order to ensure the normal operation of the device, the power device 2 needs to be cooled.

[0044] As shown in Figure 1, the substrate 1 is a multi-layer circuit board structure, specifically including at least two conductive layers 11, which are stacked along the thickness direction of the substrate 1. It can also be considered that all the conductive layers 11 are stacked along the thickness direction of the substrate 1. An insulating dielectric layer 12 is provided between any two adjacent conductive layers 11. Among them, the conductive layer 11 can be a metal layer, such as a copper layer. The conductive layer 11 can also be other materials with conductive properties, such as an indium tin oxide (ITO) film layer. Alternatively, the conductive layer 11 can also be a combination structure of a metal layer and other materials, as long as it can play a conductive role.

[0045] Exemplarily, the at least two conductive layers 11 include a first conductive layer 111 and a second conductive layer 112. Along the thickness direction of the substrate 1, the first conductive layer 111 and the second conductive layer 112 are respectively located on two surfaces of the substrate 1. The power device 2 is mounted on the surface of the first conductive layer 111 facing away from the second conductive layer 112 using a patch process. This mounting method not only reduces the volume of the power module 10 but also increases the power density of the power module 10, thereby facilitating miniaturization of the power module 10. Compared with the heat dissipation method using plug-in devices, the space occupancy rate of the power module 10 provided in the embodiment of the present application can be reduced by approximately 50%. The heat sink 3 is mounted on the surface of the second conductive layer 112 facing away from the first conductive layer 111 using processes such as welding. The heat sink 3 can fully utilize the space on the side of the substrate 1 where the second conductive layer 112 is provided, which means that the volume of the heat sink 3 can be made sufficiently large. The increased volume of the heat sink 3 allows the heat sink 3 to have a larger heat exchange area, thereby improving heat exchange efficiency. Compared with the heat dissipation method of a chip heat sink next to the power device, the heat dissipation capacity of the power module 10 provided in the embodiment of the present application can be increased by about twice. Among them, the heat sink 3 can achieve heat dissipation through heat exchange in a water cooling, air cooling or other methods.

[0046] In the power module 10 provided in the embodiment of the present application, the heat generated by the power device 2 can be transferred to the heat sink 3 through the substrate 1. The heat sink 3 then transfers the heat to the outside through heat exchange. With the substrate 1 as a reference, the power device 2 and the heat sink 3 are located on either side of the substrate 1 in the thickness direction. Based on the circuit board structure of the substrate 1, the insulating dielectric layer 12 in the substrate 1 can be used to isolate the second conductive layer 112 from the other conductive layers 11. The heat sink 3 installed on the second conductive layer 112 can then be grounded, avoiding electromagnetic interference caused by the heat sink 3 being charged.

[0047] It should be understood that when the heat generated by the power device 2 passes through the substrate 1, the thermal conductivity of the conductive layer 11 is generally higher than that of the insulating dielectric layer 12. Most of the heat can be transferred through the thickness of the conductive layer 11, but a small amount of heat can also be transferred through the plane of the conductive layer 11. The power module 10 provided in the embodiment of the present application is mainly aimed at the situation where the heat of the power device 2 is transferred to the heat sink 3 along the thickness of the substrate 1.

[0048] Specifically, in the power module 10 shown in Figure 1, the substrate 1 includes two conductive layers 11: a first conductive layer 111 and a second conductive layer 112. The power device 2 is mounted on the first conductive layer 111, and the heat sink 3 is connected to the second conductive layer 112. The insulating dielectric layer 12 between the first and second conductive layers 111, 112, electrically insulates the heat sink 3, preventing electromagnetic interference from the heat sink's thermal pads on the power device. Heat generated by the power device 2 is transferred to the heat sink 3 via the first conductive layer 111, the insulating dielectric layer 12, and the second conductive layer 112.

[0049] In other embodiments, as shown in FIG2a , the substrate 1 includes at least three conductive layers 11, including a first conductive layer 111, a second conductive layer 112, and at least one intermediate conductive layer 113. All intermediate conductive layers 113 are located between the first conductive layer 111 and the second conductive layer 112. Exemplarily, the intermediate conductive layers 113 have four layers. Along the direction from the second conductive layer 112 to the first conductive layer 111, the first intermediate conductive layer 113 is insulated from the second conductive layer 112 to ensure electrical insulation of the heat sink 3 connected to the second conductive layer 112. It can be considered that, along the direction from the second conductive layer 112 to the first conductive layer 111, of all intermediate conductive layers 113, the first intermediate conductive layer 113 is closest to the second conductive layer 112, and the last intermediate conductive layer 113 is closest to the first conductive layer 111. In the power module 10 shown in FIG2 a , the intermediate conductive layer 113 closest to the first conductive layer 111 is located at the bottom of all intermediate conductive layers 113, and the intermediate conductive layer 113 closest to the second conductive layer 112 is located at the top of all intermediate conductive layers 113. In other words, the intermediate conductive layer 113 closest to the second conductive layer 112 is electrically insulated from the second conductive layer 112.

[0050] Continuing with FIG2 a , an insulating dielectric layer 12 is also provided between the second conductive layer 112 and the intermediate conductive layer 113 closest to the second conductive layer 112. An insulating dielectric layer 12 is also provided between the first conductive layer 111 and the intermediate conductive layer 113 closest to the first conductive layer 111. An insulating dielectric layer 12 is also provided between any two adjacent intermediate conductive layers 113. To ensure electrical insulation of the heat sink 3, the insulating dielectric layer 12 between the second conductive layer 112 and the intermediate conductive layer 113 closest to the second conductive layer 112 has no metal vias, thereby isolating the second conductive layer 112 from the intermediate layer 113 closest to the second conductive layer 112, and is also isolating the heat sink 3 from the conductive layers 11 other than the second conductive layer 112.

[0051] The insulating dielectric layer 12 between the second conductive layer 112 and the intermediate conductive layer 113 closest to the second conductive layer 112 can provide insulation. While ensuring insulation, the thickness of the insulating dielectric layer 12 can be minimized to facilitate heat dissipation. Furthermore, the insulating dielectric layer 12 can be made of an insulating material with good thermal conductivity to improve heat dissipation efficiency.

[0052] To improve the heat transfer rate, provided that the thermal conductivity of the conductive layer 11 is higher than that of the insulating dielectric layer 12, the conductive layers 11 other than the second conductive layer 112 can be connected via metal vias 13. The metal vias 13 can quickly conduct heat from one conductive layer 11 to another. Specifically, the insulating dielectric layer 12 between the intermediate conductive layer 113 closest to the first conductive layer 111 and the first conductive layer 111 is provided with a metal via 13. This metal via 13 can connect the intermediate conductive layer 113 closest to the first conductive layer 111 with the first conductive layer 111. The insulating dielectric layer 12 between any two adjacent intermediate conductive layers 113 is also provided with a metal via 13. This metal via 13 can connect the two adjacent intermediate conductive layers 113. It should be understood that the presence of the metal vias 13 allows the majority of the heat to be transferred more quickly through the metal vias 13, but it does not rule out the possibility that a small amount of heat will still be transferred through the insulating dielectric layer 12. The metal via 13 may be formed by filling the hole with metal material, or by electroplating a conductive layer on the inner wall of the hole.

[0053] Based on the power module 10 shown in Figure 2a, as shown in Figure 2b, the main heat dissipation path formed when the power device 2 transfers heat through the substrate 1 is indicated by the arrows. Metal vias 13 can accelerate the speed and efficiency of heat transfer between the conductive layers 11 located on both sides of the metal vias 13. Heat is transferred between any two adjacent metal vias 13 through the conductive layer 11. It can be considered that the metal vias 13 are on the heat dissipation path.

[0054] In order to improve the heat dissipation efficiency, as shown in FIG3a, the metal vias 13 on different insulating dielectric layers 12 can be roughly aligned along the thickness direction of the substrate 1. If the metal via 13 has a center line extending along the thickness direction of the substrate 1, it can be considered that the center lines of each metal via 13 are roughly collinear. For example, when the metal via 13 is cylindrical, the axis lines of the metal vias 13 in the same metal via group G can remain aligned, and the heat dissipation path formed by the metal vias 13 in the metal via group G coincides with the axis line of each metal via 13. As shown in FIG3b, the main heat dissipation path formed when the heat of the power device 2 is transferred to the substrate 1 is shown by the arrow. The correspondence of each metal via 13 along the thickness direction of the substrate 1 can ensure that the heat dissipation path is the shortest, thereby improving the heat dissipation rate and efficiency.

[0055] Of course, to reduce the difficulty of the process, it is sufficient as long as the metal vias 13 are roughly aligned in the thickness direction of the substrate 1. For example, along the thickness direction of the substrate 1, the orthographic projections of any two adjacent metal vias 13 on the first conductive layer 111 at least partially overlap, so that the metal vias 13 can form a heat dissipation path that extends roughly along the thickness direction of the substrate 1.

[0056] In the power module 10 shown in FIG2a or FIG3a, each metal via 13 can be made when each insulating dielectric layer 12 is formed. As shown in FIG4a, after a conductive layer 11a and an insulating dielectric layer 12 are stacked to form a conductive layer 11a, a metal via 13 is formed on the insulating dielectric layer 12 by filling a plating hole or other processes. The metal via 13 penetrates the insulating dielectric layer 12 and is connected to the conductive layer 11a. Then, as shown in FIG4b, another conductive layer 11b is formed on the surface of the insulating dielectric layer 12 away from the conductive layer 11a. The conductive layer 11b is in contact with the metal via 13. The metal via 13 can connect the conductive layer 11a and the conductive layer 11b. By analogy, the insulating dielectric layer 12 and the conductive layer 11 are continued to be stacked to obtain the substrate 1 shown in FIG2a or FIG3b.

[0057] In some embodiments, as shown in Figure 5a , two or more metal vias 13 are provided on each insulating dielectric layer 12 between the first conductive layer 111 and the intermediate conductive layer 113 closest to the second conductive layer 112. Here, two metal vias 13 are shown. The metal vias 13 on different insulating dielectric layers 12 can be distributed in a regular pattern, with the metal vias 13 on multiple corresponding insulating dielectric layers 12 along the thickness of the substrate 1 being grouped together into a metal via group G. Figure 5a illustrates two metal via groups G. The metal vias 13 within each metal via group G are approximately aligned along the same heat dissipation path along the thickness of the substrate 1. If the metal vias 13 have centerlines extending along the thickness of the substrate 1, the centerlines of the metal vias 13 within each metal via group G can be considered to be approximately collinear, ensuring the shortest heat dissipation path and improving heat dissipation rate and efficiency. Specifically, along the thickness of the substrate 1, the orthographic projections of any two adjacent metal vias 13 within the same metal via group G onto the first conductive layer 111 can overlap. Exemplarily, when the metal via 13 is cylindrical, the axis lines of the metal vias 13 in the same metal via group G can remain coincident, and the heat dissipation path formed by the metal vias 13 in the metal via group G coincides with the axis line of each metal via 13 .

[0058] As shown in Figure 5b, the main heat dissipation paths formed by power device 2 as it transfers through substrate 1 are indicated by arrows. With the direction of power device 2 toward heat sink 3 as a reference, heat is transferred from power device 2 through substrate 1 to heat sink 3. During this heat transfer process, the majority of the heat is transferred along the metal vias 13 within each metal via group G in insulating dielectric layer 12.

[0059] Alternatively, as shown in FIG6 , the metal via 13 may extend from the first conductive layer 111 to the intermediate conductive layer 113 closest to the second conductive layer 112. In other words, the metal via 13 may sequentially connect the first conductive layer 111 to all intermediate conductive layers 113. The metal via 13 may be arranged at an angle, or may extend along the thickness direction of the substrate 1. When the metal via 13 extends along the thickness direction of the substrate 1, the metal via 13 is perpendicular to the first conductive layer 111, and the heat dissipation path of the power device 2 through the metal via 13 is the shortest, resulting in a higher heat dissipation rate.

[0060] During the preparation of the substrate 1 shown in FIG6 , each intermediate conductive layer 113 and insulating dielectric layer 12 in the substrate 1 can be completed to obtain the structure shown in FIG7 a . Then, metal vias 13 are formed using processes such as fill-plated holes to obtain the structure shown in FIG7 b . The metal vias 13 can connect all the intermediate conductive layers 113 . Next, as shown in FIG7 c , a first conductive layer 111 is provided at the bottom of the structure shown in FIG7 b , and the first conductive layer 111 is in contact and connected with the metal vias 13 to obtain the structure shown in FIG7 c . At this point, any two adjacent conductive layers 11 in the first conductive layer 111 and all the intermediate conductive layers 113 are connected via metal vias 13 . Two metal vias 13 are illustrated here, and each metal via 13 can simultaneously connect the first conductive layer 111 and all the intermediate conductive layers 113 .

[0061] In some embodiments, considering the manufacturing process of substrate 1, first conductive layer 111 may be prepared after all intermediate conductive layers 113 are completed. Therefore, as shown in FIG8 , all intermediate conductive layers 113 can be connected via metal vias 13, which are defined as first metal vias 131. The metal vias 13 between first conductive layer 111 and the intermediate conductive layer 113 closest to first conductive layer 111 are defined as second metal vias 132. First metal vias 131 and second metal vias 132 may not correspond to each other along the thickness direction of substrate 1.

[0062] During the preparation of the substrate 1 shown in FIG8 , the second conductive layer 112, the remaining intermediate conductive layers 113 except for the intermediate conductive layer 113 closest to the first conductive layer 111, and the insulating dielectric layer 12 can be sequentially stacked. A first metal via 131 is formed using a process such as fill-plated vias. The first metal via 131 extends to the intermediate conductive layer 113 closest to the second conductive layer 112, resulting in the structure shown in FIG9 a . An intermediate conductive layer 113 is then positioned at the bottom of the structure shown in FIG9 a . This intermediate conductive layer 113 is the intermediate conductive layer 113 furthest from the second conductive layer 112, resulting in the structure shown in FIG9 b . At this point, all intermediate conductive layers 113 are connected via the first metal via 131. Next, an insulating dielectric layer 12 is stacked at the bottom of the structure shown in FIG9 b . A second metal via 132 is formed using a process such as fill-plated vias. The second metal via 132 extends to the intermediate conductive layer 113 furthest from the second conductive layer 112, resulting in the structure shown in FIG9 c . A first conductive layer 111 is provided at the bottom of the structure shown in Figure 9c, resulting in the structure shown in Figure 9d. At this point, any two adjacent conductive layers 111 in the first conductive layer 111 and all intermediate conductive layers 113 are connected via metal vias 13. As shown in Figures 9a to 9d, when preparing the second metal via 132 between the first conductive layer 111 and the second metal via 132 closest to the first conductive layer 111, alignment with the first metal via 131 is not necessary, reducing process complexity, saving production costs, and improving production efficiency.

[0063] It should be understood that there may be other possibilities for the number and distribution of the metal vias 13, as long as metal vias 13 are provided between any two adjacent conductive layers 11 in the first conductive layer 111 and all the intermediate conductive layers 113. Adjustments can be made as needed in the specific preparation, and this application does not limit this.

[0064] As shown in Figure 10a, the heat sink 3 is soldered to the second conductive layer 112 via a plurality of heat dissipation pads 4. The power device 2 has a control electrode 21 and a connection electrode 22. The connection electrode 22 and the control electrode 21 of the power device 2 are respectively connected to the first conductive layer 111. The connection electrode 22 can be the source or drain of the power device 2. The heat generated by the power device 2 can be transferred to the first conductive layer 111 through the connection electrode 22. The control electrode 21 can be the gate of the power device 2 and can be used for signal exchange between the power device 2 and the controller.

[0065] Here, the multiple heat dissipation pads 4 include two or more heat dissipation pads 4. Each heat dissipation pad 4 is independently configured so that a gap Q exists between any two heat dissipation pads 4. When the power module 10 is in use, the power device 2 generates heat, which is transferred to the heat sink 3 through the substrate 1. The heat sink 3 may also deform to a certain extent during the heat exchange process. The structure in which the heat sink 3 is connected to the substrate 1 via the multiple heat dissipation pads 4 and the gap Q between the heat dissipation pads 4 can act as a deformation buffer, absorbing deformation energy and preventing deformation of the heat sink 3 from affecting the reliability and stability of the connection between the power device 2 and the substrate 1 through the substrate 1.

[0066] Continuing with the power module 10 shown in FIG10a , the heat dissipated by the power device 2 is transferred to the first conductive layer 111 through the connecting electrode 22, and then transferred to the heat sink 3 through the substrate 1. In order to shorten the heat dissipation path, the heat dissipation pad 4, the metal via 13, and the connecting electrode 22 can be aligned along the thickness direction of the substrate 1. Specifically, along the thickness direction of the substrate 1, the orthographic projection of the metal via 13 on the second conductive layer 112 and the orthographic projection of the connecting electrode 22 on the second conductive layer 112 at least partially overlap, and the orthographic projection of the metal via 13 on the second conductive layer 112 and the orthographic projection of the heat dissipation pad 4 on the second conductive layer 112 at least partially overlap. Thus, in the process of transferring the heat dissipated by the power device 2 to the heat sink 3, the heat dissipation path can be kept as parallel to the thickness direction of the substrate 1 as possible, thereby achieving a rapid heat dissipation effect.

[0067] In Figure 10a, two power devices 2 are provided, and one heat sink 3 is provided, and the heat sink 3 is connected to the second conductive layer 112 via two heat dissipation pads 4. Three groups of metal vias 13 are provided for each power device 2, and one heat dissipation pad 4 is provided for each power device 2. It should be understood that the number of heat sinks 3 does not necessarily need to have a certain correspondence with the number of power devices 2. For example, as shown in Figure 10b, two heat sinks 3 are provided, and the two heat sinks 3 correspond one-to-one with the two power devices 2 along the thickness direction of the substrate 1. Multiple groups of metal vias 13 can be provided between the corresponding heat sinks 3 and power devices 2 to optimize the heat dissipation effect.

[0068] Referring to both Figures 10a and 10b , the orthographic projection of the soldering position of the control electrode 21 on the first conductive layer 111 on the second conductive layer 112 does not overlap with the orthographic projection of any of the heat dissipation pads 4 on the second conductive layer 112. In other words, the gap Q between the soldering position of the control electrode 21 on the first conductive layer 111 and the heat dissipation pad 4 corresponds along the thickness direction of the substrate 1. This structure allows the connection position of the control electrode 21 and the first conductive layer 111 to avoid the location of the heat dissipation pad 4 of the heat sink 3, which helps improve device reliability.

[0069] In summary, the power module 10 provided in the embodiment of the present application adopts a patch process to mount the power device 2 on the substrate 1, which can achieve device miniaturization and provide power density. The heat sink 3 is arranged on the side of the substrate 1 away from the power device 2, and the heat sink 3 can be made larger to improve the heat dissipation efficiency. The heat sink 3 and the conductive layer 11 of the substrate 1 can be electrically insulated by the insulating dielectric layer 12 of the substrate 1 to prevent the heat sink 3 from being charged and generating electromagnetic interference. In the process of the heat generated by the power device 2 being transferred to the heat sink 3 through the substrate 1, the metal vias 13 can improve the heat dissipation efficiency.

[0070] Therefore, the power module 10 provided in the embodiment of the present application can achieve both high heat dissipation capacity and good electrical isolation capability, and has a good development prospect. It should be understood that the structure of the power device 2 and the heat sink 3 in the power module 10 provided in the embodiment of the present application, which conducts heat and dissipates heat through the substrate 1, can also be used in the fields of lasers, photovoltaics, etc. after adjustment and modification.

[0071] As shown in Figure 11a, the power module 10 provided in the embodiment of the present application may also include a capacitor device 5. The capacitor device 5 may be mounted on the side of the first conductive layer 111 facing away from the second conductive layer 112. Alternatively, as shown in Figure 11b, the capacitor device 5 may be embedded in the substrate 1, although this embodiment of the present application is not limited thereto. Of course, the power module 10 may also include other components such as inductors and resistors, which are not shown in detail here.

[0072] As shown in Figures 11a and 11b, the capacitor device 5 is connected to the power device 2 through the first conductive layer 111 to form a power conversion circuit as shown in Figure 12. The power conversion circuit includes a first power tube switch Q1, a second power tube switch Q2, a capacitor C, an inductor L, and a load R. Among them, the first power tube switch Q1 and the second power tube switch Q2 can be the power device 2 in the embodiment of the present application. It can also be considered that the power device 2 can realize the functions of the first power tube switch Q1 and the second power tube switch Q2. The capacitor C can be the capacitor device 5 in the embodiment of the present application. Through this power conversion circuit, the high voltage input by Vin can be converted into a low voltage, and output from Vout to the load R0 to power the load.

[0073] The power module 10 proposed in the embodiment of the present application can be applied to the charging device 100 as shown in Figure 13a or Figure 13b. The charging device 100 can be considered as a charging device such as a charging pile or a charger. The charging device 100 includes at least one power module 10 and at least one charging interface 20. The power conversion circuit in the power module 10 can convert the current supplied by the power supply, and the charging interface 20 is used to supply the current output by the power module 10 to the power-consuming device, such as an electric car or a terminal. Among them, the power supply can be a mains electricity, a generator or an uninterruptible power supply (UPS).

[0074] There are multiple ways to connect the charging port 20 and the power module 10, which are illustrated in Figures 13a and 13b respectively.

[0075] In Figure 13a, each power module 10 is connected to a charging port 20. Between the corresponding power modules 10 and charging ports 20, the input of the charging port 20 is connected to the output of the power module 10, and the output of the charging port 20 is used to connect to the power device to transmit the current output by the power module 10 to the power device.

[0076] In Figure 13b, each power module 10 can be simultaneously connected to at least one charging interface 20. Each power module 10 and all charging interfaces 20 corresponding to that power module 30 have multiple output terminals, each of which is connected to the input terminal of a charging interface 20. The output terminal of each charging interface 20 is used to connect to a charging device to transmit the current output by the power module 10 to the power-consuming device.

[0077] Obviously, those skilled in the art can make various changes and modifications to the embodiments of the present application without departing from the scope of the embodiments of the present application. Thus, if these modifications and variations of the embodiments of the present application fall within the scope of the claims of the present application and their equivalents, the present application also intends to include these modifications and variations.

Claims

1. A power module (10), characterized in that: include: A substrate (1) comprising at least two conductive layers (11); the at least two conductive layers (11) are stacked, and an insulating medium layer (12) is arranged between any two adjacent conductive layers (11); the at least two conductive layers (11) comprise a first conductive layer (111) and a second conductive layer (112), and the first conductive layer (111) and the second conductive layer (112) are respectively two surfaces located in the thickness direction of the substrate (1); A power device (2), the power device (2) being mounted on a surface of the first conductive layer (111) facing away from the second conductive layer (112); A heat sink (3), the heat sink (3) being arranged on a surface of the second conductive layer (112) facing away from the first conductive layer (111).

2. The power module (10) according to claim 1, characterized in that: In the at least one intermediate conductive layer (113) and the first conductive layer (111), the insulating dielectric layer (12) between any two adjacent conductive layers (11) is provided with a metal via (13).

3. The power module (10) according to claim 1 or 2, characterized in that: The insulating dielectric layer (12) between the second conductive layer (112) and the intermediate conductive layer (113) closest to the second conductive layer (112) has no metal vias.

4. The power module (10) according to any one of claims 1 to 3, characterized in that: The heat sink (3) and the substrate (1) are connected via a plurality of heat dissipation pads (4); The power device (2) comprises a control electrode (21), and an orthographic projection of a welding position between the control electrode (21) and the first conductive layer (111) on the second conductive layer (112) does not overlap with an orthographic projection of any one of the heat dissipation pads (4) on the second conductive layer (112).

5. The power module (10) according to any one of claims 1 to 4, characterized in that: The power module (10) further comprises a capacitor device (5), wherein the capacitor device (5) is connected to the power device (2) via the first conductive layer (111) to form a power conversion circuit.

6. A charging device (100), characterized in that: Comprising at least one charging interface (20) and at least one power module (10) according to any one of claims 1 to 5; The input end of the charging interface (20) is used to connect to the output end of the power module (10); The output end of the charging interface (20) is used to connect to an electrical device so as to transmit the current output by the power module (10) to the electrical device.

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