Deposition apparatus and method of operating deposition apparatus

Abstract

The invention relates to a deposition apparatus and a method of operating a deposition apparatus. The deposition apparatus includes: a base substrate; an electrostatic chuck on the base substrate; and a plate on the electrostatic chuck. The plate has a first region in which the first magnet unit is arranged and a second region in which the second magnet unit is arranged. The first magnet units are spaced apart from each other by a first distance and the second magnet units are spaced apart from each other by a second distance. The second distance is greater than the first distance.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0113123 filed in the Korean Intellectual Property Office on August 28, 2023, the disclosure of which is incorporated herein in its entirety by reference. Technical Field

[0003] Aspects of embodiments of the present disclosure relate to deposition apparatuses and methods of operating deposition apparatuses. Background Art

[0004] Recently, as interest in information display increases, research and development of display devices have been continuously conducted.

[0005] The display device may include layers including various materials. For example, the display device may include an anode electrode, a cathode electrode, and an organic light emitting layer disposed between the anode electrode and the cathode electrode.

[0006] The organic light emitting layer may be formed by various methods. For example, the organic light emitting layer may be formed by a deposition process using a fine metal mask (FMM).

[0007] In order to realize (or manufacture) a high-resolution display device, the structure forming the display device has been miniaturized, and therefore, it is necessary to finely operate a deposition apparatus.

[0008] The above information disclosed in this Background section is for enhancement of understanding of the background of the present disclosure and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art. Summary of the invention

[0009] Embodiments of the present disclosure provide a deposition apparatus that can operate with improved reliability.

[0010] Embodiments of the present disclosure also provide methods of operating a deposition apparatus.

[0011] According to an embodiment of the present disclosure, a deposition device includes: a base substrate; an electrostatic chuck on the base substrate; and a plate on the electrostatic chuck. The plate has a first area in which a first magnet unit is arranged and a second area in which a second magnet unit is arranged. The first magnet units are spaced apart from each other at a first distance, and the second magnet units are spaced apart from each other at a second distance, and the second distance is greater than the first distance.

[0012] A distance between one of the first magnet units and one of the second magnet units adjacent to the one of the first magnet units may be greater than the first distance.

[0013] The second magnet unit may include first sub-magnet units spaced apart from each other by a second distance and second sub-magnet units spaced apart from each other by a third distance greater than the second distance. The first sub-magnet unit may be closer to the first magnet unit than the second sub-magnet unit.

[0014] A distance between one of the first sub-magnet units and one of the second sub-magnet units adjacent to the one of the first sub-magnet units may be greater than the second distance.

[0015] The magnetic flux density of the first magnet unit may be smaller than the magnetic flux density of the second magnet unit.

[0016] The electrostatic chuck may have a first electrode region and a second electrode region different from the first electrode region. When viewed on a plane, the first electrode region and the first region may overlap each other.

[0017] At least one of the first magnet unit and the second magnet unit may include a permanent magnet.

[0018] The deposition apparatus may further include a driver configured to independently control a voltage applied to each of the first electrode region and the second electrode region.

[0019] According to another embodiment of the present disclosure, a deposition apparatus includes: a base substrate; an electrostatic chuck having a first electrode region and a second electrode region different from the first electrode region on the base substrate; a driver configured to independently control a voltage applied to each of the first electrode region and the second electrode region; and a plate on the electrostatic chuck. The plate has a first region in which a first magnet unit is arranged and a second region in which a second magnet unit is arranged.

[0020] According to another embodiment of the present disclosure, a method for operating a deposition device includes: arranging an electrostatic chuck having a first electrode region and a second electrode region different from the first electrode region on a base substrate; applying a first voltage to the first electrode region and applying a second voltage lower than the first voltage to the second electrode region; and arranging a plate adjacent to the electrostatic chuck so that the base substrate and the mask are closely adhered to each other. The plate includes a first magnet unit in a first region of the plate and a second magnet unit in a second region of the plate that does not overlap with the first region. The first magnet units are spaced apart from each other by a first distance, and the second magnet units are spaced apart from each other by a second distance greater than the first distance.

[0021] When a first voltage is applied to the first electrode region and a second voltage is applied to the second electrode region, at least a portion of the mask may contact the base substrate.

[0022] The method may further include aligning the base substrate and the mask.

[0023] When the mask is aligned with the base substrate, substantially the same voltage may be applied to the first electrode region and the second electrode region.

[0024] The same voltage may be lower than the first voltage.

[0025] A distance between one of the first magnet units and one of the second magnet units adjacent to the one of the first magnet units may be greater than the first distance.

[0026] The second magnet unit may include first sub-magnet units spaced apart from each other by a second distance and second sub-magnet units spaced apart from each other by a third distance greater than the second distance. The first sub-magnet unit may be closer to the first magnet unit than the second sub-magnet unit.

[0027] A distance between one of the first sub-magnet units and one of the second sub-magnet units adjacent to the one of the first sub-magnet units may be greater than the second distance.

[0028] The magnetic flux density of the first magnet unit may be smaller than the magnetic flux density of the second magnet unit.

[0029] When viewed on a plane, the first electrode region and the first region may overlap each other. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Embodiments will now be described more fully below with reference to the accompanying drawings; however, the present disclosure may be implemented in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that the present disclosure will be thorough and complete and will fully convey the scope of the present disclosure to those skilled in the art.

[0031] Figure 1 is a cross-sectional view schematically illustrating a deposition apparatus according to an embodiment of the present disclosure.

[0032] Figure 2 As Figure 1 A perspective view of a base substrate that is a deposition target of a deposition apparatus is shown in FIG.

[0033] Figure 3 yes Figure 1 A perspective view of the electrostatic chuck and plate shown in FIG.

[0034] Figure 4 It is shown Figure 1 A cross-sectional view of the plate shown in FIG.

[0035] Figure 5 The operation of the embodiment according to the present disclosure is described Figure 1 A flow chart of the steps of a method of depositing an apparatus is shown in FIG.

[0036] Figures 6 to 8It is shown Figure 5 Schematic cross-sectional view of the operating steps of the method of operating a deposition apparatus shown in .

[0037] Fig. 9 The operation of another embodiment of the present disclosure is described Figure 1 A flow chart of the steps of a method of depositing an apparatus is shown in FIG. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the following description, aspects and features necessary for understanding the operation according to embodiments of the present disclosure are described, and the description of other aspects and features may be omitted or shortened so as not to unnecessarily confuse the subject matter of the present disclosure. In addition, the present disclosure is not limited to the embodiments described herein, and may be implemented in various different forms. On the contrary, the embodiments described herein are provided to thoroughly and completely describe the present disclosure to those of ordinary skill in the art.

[0039] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it may be directly on, directly connected to, or directly coupled to the other element or layer, or there may be one or more intervening elements or layers. When an element or layer is referred to as being "directly on," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. For example, when a first element is described as being "coupled to" or "connected to" a second element, the first element may be directly coupled or directly connected to the second element, or the first element may be indirectly coupled or indirectly connected to the second element through one or more intervening elements.

[0040] In the accompanying drawings, for the clarity of illustration, the sizes of various elements, layers, etc. can be exaggerated. The same reference numerals designate the same elements. As used herein, the term "and / or" includes any and all combinations of one or more of the related listed items. In addition, the "may" used when describing the embodiments of the present disclosure refers to "one or more embodiments of the present disclosure". When after a list element, expressions such as "at least one of" and "any one of" modify the entire list of elements and do not modify the individual elements in the list. For example, the statement "at least one of a, b, and c" represents only a, only b, only c, a and b, a and c, b and c, a, b, and c, all or its deformation. As used herein, the terms "use", "using" and "used" can be considered to be synonymous with the terms "utilize", "utilize" and "utilize" respectively. As used herein, the terms "substantially," "about," and similar terms are used as terms of approximation and not as terms of degree, and are intended to allow for the inherent deviations in measurements or calculations that would be recognized by one of ordinary skill in the art.

[0041] It will be understood that although the terms first, second, third, etc. can be used in this article to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the example embodiments, the first element, first component, first region, first layer or first part discussed below can be referred to as the second element, second component, second region, second layer or second part.

[0042] For ease of description, spatially relative terms such as "below," "below," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or feature to another element or feature as shown in the drawings. It will be understood that, in addition to the orientation depicted in the drawings, spatially relative terms are intended to encompass different orientations of the device in use or operation. For example, if the device in the drawings is flipped, an element described as being "below" or "below" other elements or features will then be oriented "above" or "on" the other elements or features. Thus, the term "below" may encompass both above and below orientations. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein should be interpreted accordingly.

[0043] The terms used herein are for the purpose of describing the embodiments of the present disclosure and are not intended to limit the present disclosure. As used herein, the singular forms "a" and "an" are intended to also include the plural forms, unless the context clearly indicates otherwise. It will also be understood that when used in this specification, the terms "includes", "including", "comprises" and / or "comprising" specify the presence of stated features, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, parts and / or groups thereof.

[0044] In addition, embodiments of the present disclosure are described herein with reference to schematic diagrams of ideal embodiments (or intermediate structures) of the present disclosure, so that variations in the shapes shown in the drawings due to, for example, manufacturing techniques and / or tolerances can be expected. Therefore, the present disclosure should not be limited to the specific shapes of the regions shown herein, but includes shape deviations caused by, for example, manufacturing techniques. The regions shown in the drawings are schematic in nature, and their shapes do not represent the actual shapes of regions of the device and do not limit the scope of the present disclosure.

[0045] Figure 1 is a cross-sectional view schematically illustrating a deposition apparatus according to an embodiment of the present disclosure.

[0046] Figure 2 As Figure 1 A perspective view of a base substrate that is a deposition target of a deposition apparatus is shown in FIG.

[0047] Figure 3 It is shown Figure 1 A perspective view of the electrostatic chuck and plate shown in FIG. Figure 4 yes Figure 1 A cross-sectional view of the plate shown in FIG.

[0048] refer to Figure 1 According to an embodiment of the present disclosure, the deposition apparatus 100 may deposit (or may be configured to deposit) a deposition material on a base substrate BS.

[0049] Further references Figure 2 , the base substrate BS may have a deposition area DPA, and the deposition material may be deposited on (or to) the deposition area DPA. For ease of description, Figure 2 1 shows an embodiment in which the base substrate BS has one deposition area DPA. However, this is only exemplary, and the base substrate BS may have a plurality of deposition areas DPA. In addition, for ease of description, Figure 2The size and shape of the deposition area DPA of the base substrate BS shown in FIG. 1 are merely schematic. The size and shape of the deposition area DPA may vary depending on the deposition process.

[0050] The deposition area DPA of the base substrate BS may be parallel to a surface defined by a first direction axis (e.g., an axis extending in the first direction DR1) and a second direction axis (e.g., an axis extending in the second direction DR2). In addition, the normal direction of the deposition area DPA may be defined as a third direction DR3. The first direction DR1, the second direction DR2, and the third direction DR3 shown in the accompanying drawings are merely examples defined for ease of description. The first direction DR1, the second direction DR2, and the third direction DR3 are relative concepts and may be changed to other directions. In the following, for ease of description, the first direction DR1, the second direction DR2, and the third direction DR3 are designated by similar reference numerals.

[0051] Return to reference Figure 1 , the deposition apparatus 100 may include a chamber CH, a transfer unit DM, a mask assembly 110 , a support member 120 , an electrostatic chuck (ESC) 130 , a driving unit (eg, driver) 140 , a connection member 145 , a plate 150 , and a deposition source 160 .

[0052] The cavity CH may have a space formed therein, and a deposition process may be performed in the space formed inside the cavity CH. For example, the mask assembly 110, the support member 120, the ESC 130, the driving unit 140, the connection member 145, the plate 150, the deposition source 160, and the transfer rod ML of the transfer unit DM may be disposed in the space formed inside the cavity CH.

[0053] In some embodiments, the cavity CH may be formed such that at least a portion thereof is open (or opened). For example, a gate valve or the like may be provided in the open portion of the cavity CH, and the open portion of the cavity CH may be opened or closed by using the gate valve or the like.

[0054] The support member 120 may support and fix the mask assembly 110. In addition, the support member 120 may move the mask assembly 110 up and / or down within a distance range (e.g., within a certain distance range), or rotate the mask assembly 110 within an angle range (e.g., within a certain angle range). In addition, the support member 120 may linearly move the mask assembly 110 within a distance range (e.g., within a certain distance range) in various directions.

[0055] The mask assembly 110 may be disposed on the support member 120. The mask assembly 110 may include a mask 111 and a mask frame 112.

[0056] The mask frame 112 may have an opening through which a deposition material may pass, and may include a plurality of frames surrounding the opening (eg, extending around a periphery of the opening).

[0057] The mask frame 112 may support the mask 111. For example, the mask frame 112 may further include a support rod. The support rod may prevent a warping phenomenon caused by the weight of the mask 111 itself and may support the mask 111.

[0058] The mask 111 may be disposed on top of the mask frame 112. In some embodiments, one mask 111 may be disposed on the mask frame 112, or in other embodiments, a plurality of masks 111 may be disposed on the mask frame 112. For example, when a plurality of masks 111 are disposed on the mask frame 112, the plurality of masks 111 may be arranged in one direction (e.g., the first direction DR1 or the second direction DR2) to be close to (or cover) at least a portion of an opening defined in the mask frame 112. For ease of description, hereinafter, an embodiment in which one mask 111 is disposed to be disposed on the mask frame 112 and to be close to (or cover) at least a portion of an opening in the mask frame 112 will be mainly described.

[0059] The mask 111 may be a fine metal mask (FMM) for depositing (e.g., forming) R pixels, G pixels, and B pixels on a substrate. The mask 111 may be formed of a material widely used for FMM. For example, the mask 111 may be made of stainless steel, invar (also known as FeNi36), nickel (Ni), cobalt (Co), a nickel alloy, a nickel-cobalt alloy, and the like. The above materials have a relatively low coefficient of thermal expansion. Therefore, the phenomenon that the mask 111 is deformed by heat during the process of manufacturing the mask 111 may be alleviated or prevented.

[0060] The mask 111 may have at least one opening. When the opening is provided in plural, the plurality of openings may be provided so that a pattern is formed in at least a portion of the mask 111. In addition, when the opening is provided in plural, the plurality of openings may be provided in a plurality of regions in the mask 111 to be distinguished from (or spaced apart from) each other, and may be provided so that a pattern is formed in each region.

[0061] A base substrate BS on which a deposition material is to be deposited may be disposed on (or arranged on) the mask assembly 110. The base substrate BS may be a mother substrate that becomes a deposition target.

[0062] The deposition area DPA of the base substrate BS may be defined as an area corresponding to the at least one opening in the mask 111 of the mask assembly 110. Therefore, an area on the base substrate BS exposed by (or exposed through) the at least one opening in the mask 111 may be defined as the deposition area DPA of the base substrate BS, and an area covered by the mask 111 may be defined as a non-deposition area of ​​the base substrate BS.

[0063] The ESC 130 may be disposed on the base substrate BS. In some embodiments, a lower surface (e.g., second surface SF2) of the ESC 130 may be in contact with the base substrate BS. The ESC 130 may fix the base substrate BS by using an electrostatic force and closely adhere the base substrate BS to the mask 111. The ESC 130 may be coupled to the base substrate BS to prevent the base substrate BS from moving when aligned during a deposition process (e.g., to prevent the base substrate BS from becoming misaligned).

[0064] refer to Figures 1 to 3 , the ESC 130 may have a plurality of electrode areas EA. For example, the ESC 130 may have a first electrode area EA1 and a second electrode area EA2 that does not overlap with the first electrode area EA1 (eg, is offset from the first electrode area EA1).

[0065] A plurality of electrodes may be included in the plurality of electrode regions EA. For example, at least one first electrode and at least one second electrode may be included in the first electrode region EA1 and the second electrode region EA2. At least one first electrode may have a first polarity, and at least one second electrode may have a second polarity (e.g., a polarity opposite to the first polarity). For example, the first polarity may be a positive polarity (+), and the second polarity may be a negative polarity (-).

[0066] The driving unit 140 may drive the ESC 130. For example, the driving unit 140 may be connected to the ESC 130 through a connecting member 145 to drive the ESC 130.

[0067] The driving unit 140 may include a power source, and the power source of the driving unit 140 may be supplied to at least one first electrode and at least one second electrode included in the ESC 130 through the connecting member 145. For example, the power source included in the driving unit 140 may include one terminal defined as a positive electrode and another terminal defined as a negative electrode. One terminal of the power source may be connected to the first electrode so that a voltage having a positive polarity may be applied to the first electrode by the power source, and the other terminal of the power source may be connected to the second electrode so that a voltage having a negative polarity may be applied to the second electrode by the power source. Therefore, the first electrode may have a positive polarity, and the second electrode may have a negative polarity.

[0068] When a voltage is applied to the ESC 130 by the power supply of the driving unit 140, the ESC 130 may generate an electrostatic force. For example, when a voltage (e.g., a predetermined voltage) is applied to the first electrode and the second electrode of the ESC 130 by the power supply of the driving unit 140, an electrostatic force may be generated. Therefore, the base substrate BS and the mask 111 may be closely adhered to each other due to the electrostatic force. For example, the electrostatic force generated by the ESC 130 may attract the base substrate BS and the mask 111 in a direction toward the ESC 130. For example, an attractive force (e.g., an attractive force or a suction force) may be generated between the ESC 130 and the base substrate BS and / or between the ESC 130 and the mask 111, and the corresponding attractive force may attract the base substrate BS and the mask 111 in the third direction DR3. Therefore, the sagging of the base substrate BS and the mask 111 may be alleviated or prevented.

[0069] The first electrode area EA1 and the second electrode area EA2 may be independently controlled. For example, the driving unit 140 may independently control the voltage applied to each of the first electrode area EA1 and the second electrode area EA2. The driving unit 140 may independently apply a voltage to each of the plurality of first electrodes and the plurality of second electrodes included in the first electrode area EA1 and the second electrode area EA2. Therefore, the electrostatic forces generated by the first electrode area EA1 and the second electrode area EA2 may be different from each other. For example, the gravitational force caused by the first electrode area EA1 and the gravitational force caused by the second electrode area EA2 applied to the base substrate BS and the mask 111 may be different from each other.

[0070] The drive unit 140 may translate the ESC 130 upward or downward (e.g., may move it upward or downward). In addition, the drive unit 140 may rotate the ESC 130 within an angle range (e.g., within a certain angle range), and may linearly move the ESC 130 within a distance range (e.g., within a certain distance range) in various directions. For example, the drive unit 140 may include a device or structure such as a motor or a cylinder.

[0071] The connection member 145 may contact at least a portion of the upper surface of the ESC 130 to connect the ESC 130 and the driving unit 140 to each other. For example, the connection member 145 may contact the first surface SF1 of the ESC 130 to electrically connect the ESC 130 and the driving unit 140.

[0072] The connection member 145 may define (e.g., may have) an opening OP exposing at least a portion of the upper surface (e.g., the first surface SF1) of the ESC 130. The opening OP defined in the connection member 145 may be a region in which the board 150 is installed. For example, the board 150 may be installed in the opening OP defined by the connection member 145 to allow the base substrate BS and the mask 111 to be closely adhered to each other.

[0073] The plate 150 may be arranged to overlap with the ESC 130. The plate 150 may include a yoke plate including a permanent magnet. The plate 150 including the yoke plate is arranged to overlap with the ESC 130, so that in addition to the electrostatic force generated by the ESC 130 described above, the base substrate BS and the mask 111 may be closely adhered to each other by the magnetic field generated by the plate 150. For example, the magnetic field generated by the plate 150 attracts the mask 111 made of metal in a direction toward the plate 150 (e.g., a gravitational force or an attractive force is generated between the plate 150 and the mask 111), so that the coupling force between the base substrate BS and the mask 111 can be further increased, and sagging of the base substrate BS and the mask 111 can be prevented.

[0074] The board 150 may have a first area CA and a second area OA that does not overlap with (e.g., is offset from or spaced apart from) the first area CA. For example, the first area CA of the board 150 may overlap with the first electrode area EA1, and the second area OA of the board 150 may overlap with the second electrode area EA2.

[0075] The transfer unit DM may be connected to the plate 150. The transfer unit DM may include a transfer rod ML and a transfer body MC. The transfer body MC may transfer the plate 150 in a third direction DR3 and / or in a direction opposite to the third direction DR3 by using the transfer rod ML. In addition, the transfer body MC may rotate the plate 150 within an angle range (e.g., within a certain angle range) and may linearly move the plate 150 in various directions within a distance range (e.g., within a certain distance range) through the transfer rod ML.

[0076] For example, the transfer body MC may be disposed outside the cavity CH and may include any one of a cylinder and a motor. For example, when the transfer body MC includes a cylinder, the transfer rod ML may be a piston. In another embodiment, when the transfer body MC includes a motor, the transfer rod ML may be implemented as a ball screw that can move up / down according to the rotation (e.g., the direction of rotation) of the motor. However, this is merely schematic, and the transfer unit DM may include various devices capable of moving the plate 150.

[0077] The ESC 130 and the plate 150 may be driven and / or transferred independently of each other. For example, the ESC 130 may be driven and / or transferred by the driving unit 140, and the plate 150 may be driven and / or transferred by the transfer unit DM. Therefore, the ESC 130 and the plate 150 are driven and / or transferred independently of each other by different components, so that the alignment may be prevented from being distorted due to vibration. Therefore, the yield of the deposition process may be improved.

[0078] The deposition source 160 may be disposed inside the chamber CH. The deposition material may be accommodated inside the deposition source 160 .

[0079] The deposition source 160 may evaporate at least one deposition material among an organic material, an inorganic material, and a conductive material toward the mask 111. The deposition material may be deposited on the deposition area DPA of the base substrate BS while passing through at least one opening included in the mask 111. For example, the deposition source 160 may deposit the deposition material on (or to) the deposition area DPA of the base substrate BS by using a method of heating and evaporating the deposition material at a high temperature. In an example, the deposition source 160 may include a heater for heating the deposition material.

[0080] The deposition apparatus 100 may further include a transfer device for moving the deposition source 160 in a horizontal direction (eg, the first direction DR1 or the second direction DR2 ).

[0081] The nozzle unit 165 may be connected to the deposition source 160 to provide the deposition material evaporated or sublimated from the deposition source 160 to the outside. The nozzle unit 165 may include at least one nozzle. For example, the nozzle may be provided in the form of a point nozzle that is spaced apart from each other and arranged in a point form. In another embodiment, the nozzle may be provided in the form of a line nozzle that sprays the deposition material on a specific area.

[0082] refer to Figure 4 , a plurality of magnet units MG may be disposed on the plate 150. For example, the first magnet unit MG1 may be disposed in the first area CA, and the second magnet unit MG2 may be disposed in the second area OA.

[0083] The plurality of magnet units MG may be arranged to be spaced apart from each other. For example, the magnet units MG may be spaced apart from each other in the first direction DR1 or the second direction DR2. In some embodiments, the magnet units MG may be arranged in a matrix structure on a plane relative to the first direction DR1 and the second direction DR2. The first direction DR1 may be a row direction, and the second direction DR2 may be a column direction.

[0084] In some embodiments, the plurality of magnet units MG may be alternately formed (or have) different polarities. For example, magnet units forming N poles and magnet units forming S poles may be alternately disposed along the first direction DR1.

[0085] The plurality of magnet units MG may include permanent magnets. For example, the magnet unit MG may include ferromagnets including ferrite-based magnets, neodymium-based magnets, samarium-cobalt-based magnets, etc. However, the present disclosure is not limited thereto. In some embodiments, at least one of the first magnet unit MG1 and the second magnet unit MG2 may include a permanent magnet.

[0086] The first area CA of the board 150 may correspond to the central area of ​​the board 150, and the second area OA may correspond to the outer area of ​​the board 150. For example, in a cross-sectional view, the board 150 may have a first area CA adjacent to a virtual center line and a second area OA relatively farther from the center line of the board 150 than the first area CA.

[0087] The first magnet units MG1 may be disposed to be spaced apart from each other by a certain distance. For example, the first magnet units MG1 may be disposed to be spaced apart from each other by a first distance WT1.

[0088] In some embodiments, any one of the first magnet units MG1 and any one of the second magnet units MG2 adjacent to the corresponding first magnet unit MG1 may be disposed to be spaced apart from each other by a second distance WT2 .

[0089] According to an embodiment of the present disclosure, the magnetic force applied to the ESC 130 and the mask 111 through the second area OA of the plate 150 may be stronger than the magnetic force applied to the ESC 130 and the mask 111 through the first area CA of the plate 150. For example, when the distance between two adjacent magnets is set less than a certain distance, the magnetic force generated by the two magnets may become stronger as the distance between the two magnets becomes larger. For example, the magnetic force generated by the second magnet unit MG2 set to be spaced apart from each other by the second distance WT2 may be stronger than the magnetic force generated by the first magnet unit MG1 set to be spaced apart from each other by the first distance WT1. Therefore, the magnetic force applied to the ESC 130 and the mask 111 overlapping with the second area OA may be stronger than the magnetic force applied to the ESC 130 and the mask 111 overlapping with the first area CA. For example, the magnitude of the magnetic force applied to the ESC 130 and the mask 111 in the upper direction (e.g., the third direction DR3) by the plate 150 may become stronger as it approaches the two end portions from the central portion of each of the ESC 130 and the mask 111 (or may increase as it approaches the two end portions from the central portion of each of the ESC 130 and the mask 111).

[0090] The second magnet unit MG2 may include a first sub-magnet unit MG2_1 and a second sub-magnet unit MG2_2 disposed relatively farther from the first magnet unit MG1 than the first sub-magnet unit MG2_1. Each of the first sub-magnet unit MG2_1 and the second sub-magnet unit MG2_2 may be disposed to be spaced apart from each other at a fixed distance. For example, the first sub-magnet unit MG2_1 may be disposed to be spaced apart from each other at a second distance WT2, and the second sub-magnet unit MG2_2 may be disposed to be spaced apart from each other at a third distance WT3 greater than the second distance WT2.

[0091] In some embodiments, any one of the first sub magnet units MG2_1 and any one of the second sub magnet units MG2_2 adjacent to the corresponding first sub magnet unit MG2_1 may be disposed to be spaced apart from each other by a third distance WT3 .

[0092] According to an embodiment of the present disclosure, the magnetic force generated by the second sub-magnet units MG2_2 spaced apart from each other by a third distance WT3 greater than the second distance WT2 may be stronger than the magnetic force generated by the first sub-magnet units MG2_1 spaced apart from each other by the second distance WT2. Therefore, the magnitude of the magnetic force applied to the ESC 130 and the mask 111 in the upward direction through the plate 150 may become stronger as the central portion of each of the ESC 130 and the mask 111 approaches (or may increase as the central portion of each of the ESC 130 and the mask 111 approaches (or approaches) the two end portions).

[0093] In some embodiments, the magnetic flux density of the first magnet unit MG1 may be smaller than the magnetic flux density of the second magnet unit MG2. For example, the magnetic flux density of the first magnet unit MG1 may be 400 Gauss or less, and the magnetic flux density of the second magnet unit MG2 may be 450 Gauss or greater. Therefore, the magnetic force applied to the ESC 130 and the mask 111 overlapping the first area CA may be weaker than the magnetic force applied to the ESC 130 and the mask 111 overlapping the second area OA, and the magnitude of the magnetic force applied to the ESC 130 and the mask 111 in the upper direction through the plate 150 may become weaker as the two end portions of each of the ESC 130 and the mask 111 approach (or approach) the central portion (or may decrease as the two end portions of each of the ESC 130 and the mask 111 approach (or approach) the central portion).

[0094] Next, we will refer to Figures 5 to 8 A method of operating a deposition apparatus according to an embodiment of the present disclosure is described. Figures 5 to 8 In the description, the description of the parts already described above will be simplified or will not be repeated.

[0095] Figure 5 is a flow chart describing the steps of a method of operating a deposition apparatus according to an embodiment of the present disclosure.

[0096] Figures 6 to 8 It is shown Figure 5 Schematic cross-sectional view of the operating steps of the method of operating a deposition device described in.

[0097] refer to Figure 5 , the method of operating the deposition device 100 according to an embodiment of the present disclosure may include a step S510 of setting an electrostatic chuck (ESC) on a base substrate, a step S520 of applying a first voltage to a first electrode region and a second voltage to a second electrode region, and a step S530 of allowing the base substrate and the mask to be closely adhered to each other by allowing a plate to be adjacent to the ESC.

[0098] and Figure 3 Reference together Figure 5 and Figure 6 In step S510 , the ESC 130 having the first electrode area EA1 and the second electrode area EA2 different from the first electrode area EA1 may be disposed on the base substrate BS.

[0099] In this step, the base substrate BS can be closely adhered to the ESC 130. For example, referring to Figure 1 and Figure 3 , a voltage may be applied to the ESC 130 by the power supply of the driving unit 140. For example, a voltage may be applied to a plurality of electrodes included in the first electrode area EA1 and the second electrode area EA2. Therefore, an attractive force (or attraction) may be generated in a direction (eg, a third direction DR3) from the base substrate BS toward the ESC 130, and the base substrate BS may be closely adhered to the ESC 130.

[0100] In this step, the direction of the resultant force applied to the mask 111 may be in the downward direction (e.g., the opposite direction of the third direction DR3), and therefore, the mask 111 may be warped in the downward direction (or may sag in the downward direction). For example, the attractive force applied to the mask 111 in the upward direction (e.g., the third direction DR3) by the ESC 130 may not be strong in the mask 111 relatively far from the ESC 130. In addition, because the support member 120 and the mask frame 112 support only two sides of the mask 111 (e.g., one side and the other side facing the one side), the support force for supporting the mask 111 may become weaker as it moves away from the two sides of the mask 111. For example, the gravity having substantially the same magnitude acts throughout the entire area of ​​the mask 111, but the magnitude of the support force in the upward direction caused by the support member 120 and the mask frame 112 may decrease as it moves away from the support member 120 and the mask frame 112. Therefore, the resultant force acting in the downward direction on the mask 111 may become stronger as it approaches the central portion of the mask 111, and a sagging (or sag) phenomenon may occur in the central portion of the mask 111. In addition, as a display device as a deposition target of the deposition apparatus 100 becomes larger, the size of each of the base substrate BS and the mask 111 increases, and therefore, a warping phenomenon of the mask 111 may become more serious.

[0101] and Figure 3 Reference together Figures 5 to 7 In step S520, a first voltage may be applied to the first electrode region EA1, and a second voltage may be applied to the second electrode region EA2. In some embodiments, the second voltage may be lower than the first voltage. Therefore, the magnitude of the electrostatic force formed in the first electrode region EA1 and the magnitude of the electrostatic force formed in the second electrode region EA2 may be different from each other. For example, the gravitational force (or attractive force) applied to the base substrate BS and the mask 111 at the first electrode region EA1 may be stronger than the gravitational force applied to the base substrate BS and the mask 111 at the second electrode region EA2.

[0102] The attractive force applied to the mask 111 overlapping the first electrode area EA1 may be stronger than the attractive force applied to the mask 111 overlapping the second electrode area EA2. Therefore, the central portion of the mask 111 may be pulled (or dragged) more strongly in the upper direction (e.g., in the third direction DR3), and thus, a warping phenomenon of the central portion of the mask 111 in the lower direction may be reduced or prevented. For example, because the central portion of the mask 111 is warped in the upper direction, at least a portion of the mask 111 may contact the base substrate BS.

[0103] refer to Figure 5 and Figure 8In step S530 , the base substrate BS and the mask 111 may be closely adhered to each other by allowing the plate 150 to be adjacent to the ESC 130 .

[0104] In this step, the plate 150 may move in a lower direction (eg, in a direction opposite to the third direction DR3). Therefore, the base substrate BS and the mask 111 may be pulled upward by the magnetic force of the plate 150, and the base substrate BS and the mask 111 may be closely adhered to each other.

[0105] and Figure 4 Reference together Figure 5 and Figure 8 , the magnetic force applied to the ESC 130 and the mask 111 by the first magnet unit MG1 may be weaker than the magnetic force applied to the ESC 130 and the mask 111 by the second magnet unit MG2. Therefore, the magnetic force applied to the ESC 130 and the mask 111 corresponding to the first area CA may be weaker than the magnetic force applied to the ESC 130 and the mask 111 corresponding to the second area OA.

[0106] When a substrate as a target to be deposited and a portion of a mask are not in contact with each other (e.g., spaced apart from each other), the distance between the central portion of the mask and the substrate may be relatively large due to a warping phenomenon of the central portion of the mask. In order to allow the substrate and the mask to adhere closely to each other, the magnetic force generated at the central portion of the plate should be strong, and the substrate and the mask attracted by the strong magnetic force may collide with each other in the corresponding process. Therefore, there is a risk that the substrate and the mask will be damaged.

[0107] On the other hand, according to an embodiment of the present disclosure, before the plate 150 moves upward in the lower direction, at least a portion of the central portion of the mask 111 may be in a state where the at least a portion is in contact with the base substrate BS. Therefore, even when the magnetic force applied to the mask 111 and the base substrate BS by the plate 150 is relatively weak, the mask 111 and the base substrate BS may be stably and tightly adhered to each other. For example, when the mask 111 and the base substrate BS are tightly adhered to each other, the impact between the mask 111 and the base substrate BS may not be large (for example, it may be limited in energy or size). Therefore, the risk that the mask 111 and the base substrate BS will be damaged can be minimized or at least reduced, and the reliability of the deposition process of the deposition device 100 can be improved.

[0108] Fig. 9 is a flow chart describing the steps of a method of operating a deposition apparatus according to another embodiment of the present disclosure.

[0109] refer to Fig. 9, a method of operating a deposition device 100 according to another embodiment of the present disclosure may include a step S910 of setting an electrostatic chuck (ESC) on a base substrate, a step S920 of aligning the base substrate and the mask, a step S930 of applying a first voltage to a first electrode region and a second voltage to a second electrode region, and a step S940 of allowing the base substrate and the mask to closely adhere to each other by allowing a plate to be adjacent to the ESC.

[0110] Steps S910, S930 and S940 may be combined with Figure 5 The described steps S510 , S520 , and S530 are similar, and repeated descriptions will be omitted.

[0111] refer to Figure 6 and Fig. 9 , the base substrate BS and the mask 111 may be aligned. For example, the mask 111 may be aligned relative to the base substrate BS so that any one of the openings in the mask 111 accurately corresponds to a portion (eg, a pixel) on the base substrate BS.

[0112] In this step, the ESC 130 may be in a state where the ESC 130 is disposed on the base substrate BS, and substantially the same voltage may be applied to the first electrode area EA1 and the second electrode area EA2 of the ESC 130. Therefore, the base substrate BS may stably maintain a state where the base substrate BS is in contact with the ESC 130 by an electrostatic force in an upper direction generated by the ESC 130.

[0113] and Figure 7 Reference together Figure 6 and Fig. 9 , in this step, a voltage lower than the first voltage may be applied to the first electrode area EA1 and the second electrode area EA2 of the ESC 130. Therefore, the mask 111 may be less affected by the electrostatic force generated by the ESC 130, and the alignment between the mask 111 and the base substrate BS may be smoothly performed. For example, when a relatively low voltage is applied to the ESC 130, the electrostatic force generated by the ESC 130 is relatively weak, and therefore, the gravitational force (or attractive force) in the upper direction applied to the mask 111 may also be relatively weak. Therefore, the movement of the mask 111 in the horizontal direction (e.g., the first direction DR1) is not restricted, and the mask 111 and the base substrate BS may be easily aligned.

[0114] In a deposition apparatus and a method of operating the deposition apparatus according to an embodiment of the present disclosure, the deposition apparatus includes an electrostatic chuck including electrodes controlled independently of each other and magnet units disposed to be spaced apart from each other by a certain distance, so that reliability of the deposition apparatus can be improved.

[0115] Embodiments are disclosed herein, and although specific terms are used, they are used and interpreted in a general and descriptive sense, and not for limiting purposes. In some instances, as will be apparent to those of ordinary skill in the art upon filing this application, unless otherwise specifically stated, features, characteristics, and / or elements described in conjunction with one embodiment may be used alone or in combination with features, characteristics, and / or elements described in conjunction with other embodiments. Therefore, it will be understood by those skilled in the art that various changes may be made in form and detail without departing from the spirit and scope of the present disclosure as set forth in the appended claims and their equivalents.

Claims

1. A deposition device, comprising: base substrate; an electrostatic chuck on the base substrate; as well as a plate having, on the electrostatic chuck, a first region in which the first magnet unit is arranged and a second region in which the second magnet unit is arranged, The first magnet units are spaced apart from each other by a first distance, and the second magnet units are spaced apart from each other by a second distance, wherein the second distance is greater than the first distance.

2. The deposition apparatus according to claim 1, wherein: A distance between one of the first magnet units and one of the second magnet units adjacent to the one of the first magnet units is greater than the first distance.

3. The deposition apparatus according to claim 1, wherein: the second magnet unit includes first sub-magnet units spaced apart from each other by the second distance and second sub-magnet units spaced apart from each other by a third distance, the third distance being greater than the second distance, and The first sub-magnet unit is closer to the first magnet unit than the second sub-magnet unit.

4. The deposition apparatus according to claim 3, wherein: A distance between one of the first sub-magnet units and one of the second sub-magnet units adjacent to the one of the first sub-magnet units is greater than the second distance.

5. The deposition apparatus according to claim 1, wherein: The magnetic flux density of the first magnet unit is smaller than the magnetic flux density of the second magnet unit.

6. The deposition apparatus according to claim 1, wherein: The electrostatic chuck has a first electrode region and a second electrode region different from the first electrode region, and Wherein, when viewed from a plane, the first electrode region and the first region overlap with each other. 7 . The deposition apparatus of claim 6 , further comprising a driver configured to independently control a voltage applied to each of the first electrode region and the second electrode region.

8. The deposition apparatus according to claim 1, wherein: At least one of the first magnet unit and the second magnet unit includes a permanent magnet.

9. A deposition apparatus comprising: base substrate; an electrostatic chuck having a first electrode region and a second electrode region different from the first electrode region on the base substrate; a driver configured to independently control a voltage applied to each of the first electrode region and the second electrode region; as well as A plate having a first region in which a first magnet unit is arranged and a second region in which a second magnet unit is arranged on the electrostatic chuck.

10. A method of operating a deposition apparatus, the method comprising: disposing an electrostatic chuck having a first electrode region and a second electrode region different from the first electrode region on a base substrate; applying a first voltage to the first electrode region and applying a second voltage lower than the first voltage to the second electrode region; as well as disposing a plate adjacent to the electrostatic chuck so that the base substrate and the mask are closely adhered to each other, wherein the plate comprises a first magnet unit arranged in a first region of the plate and a second magnet unit arranged in a second region of the plate not overlapping the first region, and The first magnet units are spaced apart from each other by a first distance, and the second magnet units are spaced apart from each other by a second distance, wherein the second distance is greater than the first distance.

11. The method according to claim 10, wherein: When the first voltage is applied to the first electrode region and the second voltage is applied to the second electrode region, at least a portion of the mask contacts the base substrate.

12. The method of claim 10, further comprising aligning the base substrate and the mask.

13. The method according to claim 12, wherein: When the mask and the base substrate are aligned, the same voltage is applied to the first electrode region and the second electrode region.

14. The method according to claim 13, wherein: The same voltage is lower than the first voltage.

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