Graph correction model calibration method and device, graph correction method and electronic equipment
By measuring and positioning the electrical signal waveform of the photoresist experimental pattern, the calculation of model calibration parameters is used to calibrate the initial graph correction model, which solves the problem of low optical proximity correction accuracy in the prior art, and achieves higher accuracy and accuracy.
Patent Information
- Application Number
- CN202411795793.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-06
- Publication Date
- 2025-02-28
AI Technical Summary
The data of the existing optical proximity effect correction model is an approximation of the actual measured values, resulting in a decrease in the accuracy of the optical proximity correction.
By obtaining the experimental graph of the graphical photoresist, measuring its electrical signal waveform, positioning the measurement point, and calculating the model calibration parameters based on the position parameters of the measurement point, and then calibrating the initial graph correction model.
Improve the accuracy of the graphic correction model, and thus improve the accuracy of optical proximity correction.
Smart Images
Figure CN119535908A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor technology, and in particular to a calibration method and device for a graphic correction model, a graphic correction method and electronic equipment. Background Art
[0002] In the field of semiconductor manufacturing, Optical Proximity Correction (OPC) can effectively offset the photoresist image distortion caused by the diffraction phenomenon of light when the lithography system is imaged. At present, the optical proximity correction technology is a model-based optical proximity correction, which simulates the imaging law of the actual lithography system by collecting the actual photoresist profile data on the wafer and fitting the parameters of the approximate lithography model. Therefore, the more information the actual photoresist profile data has, the more accurate the model parameters are, the higher the model accuracy is, and the more accurate the correction result of OPC is.
[0003] However, the data of the existing optical proximity effect correction model is an approximation of the actual measured value, which leads to errors in the subsequent correction process and reduces the accuracy of the optical proximity correction. Summary of the invention
[0004] The technical problem solved by the present invention is to provide a calibration method and device for a graphic correction model, a graphic correction method and an electronic device to improve the accuracy of optical proximity correction.
[0005] To solve the above technical problems, an embodiment of the present invention provides a calibration method for a graphic correction model, which is used to calibrate an initial graphic correction model, including: obtaining a patterned photoresist, wherein the photoresist has an experimental pattern; measuring the experimental pattern to obtain a waveform of an electrical signal of the experimental pattern; locating a measurement point according to the waveform; calculating a model calibration parameter according to a position parameter corresponding to the measurement point; and calibrating the initial graphic correction model based on the model calibration parameter to obtain a graphic correction model.
[0006] Optionally, according to the waveform, the step of locating the measurement point includes: obtaining the position parameters corresponding to the peak value or the position parameters corresponding to the valley value of the waveform; locating the first measurement point and the second measurement point according to the position parameters corresponding to the peak value or the position parameters corresponding to the valley value, the first measurement point and the second measurement point are respectively located on both sides of the position parameters corresponding to the peak value or the position parameters corresponding to the valley value.
[0007] Optionally, the step of calculating the model calibration parameters according to the position parameters corresponding to the measurement points includes: obtaining the position parameters of the first measurement point and the position parameters of the second measurement point; and calculating the line width between the first measurement point and the second measurement point according to the position parameters.
[0008] Optionally, the step of calculating the line width between the first measurement point and the second measurement point according to the position parameter further includes: acquiring the photoresist thickness; and obtaining the photoresist tilt angle according to the line width and the photoresist thickness.
[0009] Optionally, the step of obtaining the photoresist inclination according to the line width and the photoresist thickness includes: calculating the photoresist inclination angle θ=arctan(h / w) based on trigonometric functions, where θ represents the photoresist inclination angle, h represents the photoresist thickness, and w represents the line width.
[0010] Optionally, the step of calibrating the initial graphic correction model based on the model calibration parameters includes: calibrating the initial graphic correction model based on the photoresist tilt angle, the line width, and the photoresist thickness.
[0011] Optionally, the calibration method of the graphic correction model further includes: acquiring a measurement image of the experimental graphic.
[0012] Optionally, the step of acquiring a measurement image of the experimental pattern includes: measuring the experimental pattern, acquiring a waveform of an electrical signal of the experimental pattern, and acquiring the measurement image of the experimental pattern.
[0013] Optionally, in the step of measuring the experimental pattern and obtaining the waveform of the electrical signal of the experimental pattern, the experimental pattern is measured by CD-SEM to obtain the waveform of the electrical signal of the experimental pattern.
[0014] Optionally, the calibration method of the graphic correction model further includes: providing a photoresist layer before the step of obtaining the patterned photoresist; and patterning the photoresist layer to form a patterned photoresist layer.
[0015] Correspondingly, the present invention also provides a graphic correction method, comprising: obtaining a design layout; obtaining a graphic correction model, wherein the graphic correction model is calibrated by the calibration method described above; and correcting the design layout based on the graphic correction model.
[0016] Correspondingly, the present invention also provides a calibration device for a graphic correction model, comprising: an acquisition unit, used to acquire a patterned photoresist, the photoresist having an experimental pattern; a measuring unit, used to measure the experimental pattern and acquire the waveform of the electrical signal of the experimental pattern; a positioning unit, used to position a measurement point according to the waveform; a calculation unit, used to calculate a model calibration parameter according to a position parameter corresponding to the measurement point; and a calibration unit, used to calibrate the initial graphic correction model based on the model calibration parameter to obtain a graphic correction model.
[0017] Correspondingly, the present invention also provides an electronic device, including a memory and a processor, wherein the memory stores a computer program that can be run on the processor, and the processor executes the steps of the above method when running the computer program.
[0018] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:
[0019] The embodiment of the present invention locates the measurement point according to the waveform of the electrical signal of the experimental figure, and calculates the model calibration parameters through the position parameters of the measurement point. Compared with the prior art method of approximating the model calibration parameters by the slope of the electrical signal waveform, the model calibration parameters of the present invention are more accurate, thereby achieving an improvement in the accuracy of the graphic correction model. Subsequently, the graphic to be corrected is corrected based on the corrected graphic correction model, thereby improving the accuracy of the optical proximity correction. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] Figure 1 FIG. 1 is a flow chart of a calibration method for a graphics correction model according to an embodiment of the present invention. Figure 1 ;
[0021] Figure 2 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in one embodiment of the present invention Figure 1 ;
[0022] Figure 3 FIG. 1 is a schematic diagram of the structure of a waveform in a calibration method of a graphics correction model in an embodiment of the present invention. Figure 1 ;
[0023] Figure 4 FIG. 1 is a schematic diagram of the structure of a waveform in a calibration method of a graphics correction model in an embodiment of the present invention. Figure 2 ;
[0024] Figure 5 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in one embodiment of the present invention Figure 2 ;
[0025] Figure 6Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in another embodiment of the present invention Figure 1 ;
[0026] Figure 7 FIG. 1 is a schematic diagram of a waveform in a calibration method of a graphics correction model in another embodiment of the present invention. Figure 1 ;
[0027] Figure 8 FIG. 1 is a schematic diagram of a waveform in a calibration method of a graphics correction model in another embodiment of the present invention. Figure 2 ;
[0028] Fig. 9 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in another embodiment of the present invention Figure 2 ;
[0029] Fig.10 It is a structural schematic diagram of a calibration device for a graphic correction model in another embodiment of the present invention. DETAILED DESCRIPTION
[0030] At present, the edge of the photoresist on the wafer after exposure and development is tilted downward, not perpendicular to the wafer plane. When using CD-SEM for measurement, grabbing the edge of the photoresist at a vertical downward angle will make the edge of the photoresist blurred and there will be no clear boundary. Therefore, the line width data obtained by CD-SEM is an approximate value extracted from the blurred boundary using parameters such as the slope and threshold of the electrical signal. When doing model simulation later, using a single contour to approximate the actual measured value is prone to large errors.
[0031] In order to solve the above technical problems, the technical solution of the present invention provides a method for obtaining the position parameters of the measurement points according to the waveform of the electrical signal of the experimental figure, and calculating the model calibration parameters according to the position parameters of the measurement points, so as to improve the accuracy of the graphic correction model, and subsequently correct the graphic to be corrected based on the corrected graphic correction model to improve the accuracy of the optical proximity correction.
[0032] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0033] Figure 1 FIG. 1 is a flow chart of a calibration method for a graphics correction model according to an embodiment of the present invention. Figure 1 .
[0034] Please refer to Figure 1 , Figure 1 FIG. 1 is a flow chart of a calibration method for a graphics correction model according to an embodiment of the present invention. Figure 1The calibration method of the image correction model is used to calibrate the initial image correction model, comprising the following steps:
[0035] S1: Obtaining a patterned photoresist, wherein the photoresist has an experimental pattern.
[0036] S2: measuring the experimental pattern and obtaining the waveform of the electrical signal of the experimental pattern.
[0037] S3: Locate the measuring point according to the waveform.
[0038] S4: Calculate model calibration parameters according to the position parameters corresponding to the measurement points.
[0039] S5: Calibrate the initial image correction model based on the model calibration parameters to obtain an image correction model.
[0040] Wherein, the experimental pattern in the photoresist is a space pattern or a wide pattern.
[0041] Next, taking the experimental pattern in the photoresist as a space pattern as an example, each step is analyzed and explained.
[0042] In this embodiment, step S1 is performed to obtain a patterned photoresist 600 .
[0043] Please refer to Figure 2 , Figure 2 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in one embodiment of the present invention Figure 1 , the experimental pattern in the photoresist 600 is a space pattern, wherein the space pattern can be a photoresist pattern including a first opening 601, and the first opening 601 is located between adjacent photoresists 600.
[0044] The step of obtaining the patterned photoresist 600 further includes: obtaining a measurement image of the experimental pattern.
[0045] Specifically, by measuring the experimental pattern, a waveform of an electrical signal of the experimental pattern is obtained, and at the same time, a measurement image of the experimental pattern is obtained.
[0046] In this embodiment, in the step of measuring the experimental pattern and obtaining the waveform of the electrical signal of the experimental pattern, the experimental pattern is measured by CD-SEM to obtain the waveform of the electrical signal of the experimental pattern.
[0047] Before executing step S1 to obtain the patterned photoresist 600 , the method further includes: providing a photoresist layer; and patterning the photoresist layer to form a patterned photoresist layer.
[0048] Execute step S2 to measure the experimental pattern and obtain a first waveform of the electrical signal of the experimental pattern.
[0049] Please refer to Figure 3 , Figure 3 FIG. 1 is a schematic diagram of the structure of a waveform in a calibration method of a graphics correction model in an embodiment of the present invention. Figure 1 , the first waveform is a waveform corresponding to the space figure. Taking the rectangular coordinate system as an example, the horizontal coordinate of the first waveform is the position, and the vertical coordinate of the first waveform is the electrical signal, wherein the position corresponds to the measured wafer (i.e., photoresist) position, and the electrical signal corresponds to the photoresist state of the current wafer position. Specifically, if the currently scanned wafer position is at the edge of photoresist development, an electrical signal peak or valley appears on the first waveform.
[0050] Specifically, the electrical signal may be a voltage signal or a current signal.
[0051] Step S3 is executed to locate the measurement point according to the first waveform 602 .
[0052] Specifically, step S3 includes: obtaining the position parameters corresponding to the peak value 603 of the first waveform 602; locating the first measurement point 604 and the second measurement point 605 according to the position parameters corresponding to the peak value 603, and the first measurement point 604 and the second measurement point 605 are respectively located on both sides of the position parameters corresponding to the peak value 603.
[0053] Please refer to Figure 4 , Figure 4 FIG. 1 is a schematic diagram of the structure of a waveform in a calibration method of a graphics correction model in an embodiment of the present invention. Figure 2 , the first measurement point 604 is located on the right side of the peak 603 , and the second measurement point 605 is located on the left side of the peak 603 .
[0054] In this embodiment, the ordinate of the first measurement point 604 is: half of the sum of the ordinate of the peak value 603 and the ordinate of the valley value located on the right side of the peak value 603 and closest to the peak value 603. After obtaining the ordinate of the first measurement point 604, the abscissa of the first measurement point 604 is: the abscissa value corresponding to the ordinate of the current first measurement point 604 on the waveform between the peak value 603 and the valley value located on the right side of the peak value 603 and closest to the peak value 603.
[0055] Specifically, the ordinate corresponding to the peak value 603 is 5V, the abscissa corresponding to the peak value 603 is 10nm, the ordinate of the valley value located on the right side of the peak value 603 and closest to the peak value 603 is 1V, the abscissa of the valley value located on the right side of the peak value 603 and closest to the peak value 603 is 14nm, the ordinate of the first measurement point 604 is 3V, and the abscissa of the first measurement point 604 is 12nm.
[0056] In this embodiment, the ordinate of the second measurement point 605 is: half of the sum of the ordinate of the peak value 603 and the ordinate of the valley value located on the left side of the peak value 603 and closest to the peak value 603. After obtaining the ordinate of the second measurement point 605, the abscissa of the second measurement point 605 is: the abscissa value corresponding to the ordinate of the current second measurement point 605 on the waveform between the peak value 603 and the valley value located on the left side of the peak value 603 and closest to the peak value 603.
[0057] Specifically, the ordinate corresponding to the peak value 603 is 5V, the abscissa corresponding to the peak value 603 is 10nm, the ordinate of the valley value located on the left side of the peak value 603 and closest to the peak value 603 is 4V, the abscissa of the valley value located on the left side of the peak value 603 and closest to the peak value 603 is 6nm, the ordinate of the first measurement point is 4.5V, and the abscissa of the first measurement point is 8nm.
[0058] In other embodiments, the ordinate of the first measurement point is: one third of the sum of the ordinate of the peak value and the ordinate of the valley value located on the right side of the peak value and closest to the peak value. After obtaining the ordinate of the first measurement point, the abscissa of the first measurement point is: the abscissa value corresponding to the ordinate of the current first measurement point on the waveform between the peak value and the valley value located on the right side of the peak value and closest to the peak value.
[0059] Specifically, the vertical coordinate corresponding to the peak value is 5V, the horizontal coordinate corresponding to the peak value is 10nm, the vertical coordinate of the valley value located on the right side of the peak value and closest to the peak value is 1V, the horizontal coordinate of the valley value located on the right side of the peak value and closest to the peak value is 14nm, the vertical coordinate of the first measurement point is 2V, and the horizontal coordinate of the first measurement point is 11.3nm.
[0060] In other embodiments, the ordinate of the second measurement point is: one third of the sum of the ordinate of the peak value and the ordinate of the valley value located on the left side of the peak value and closest to the peak value. After obtaining the ordinate of the second measurement point, the abscissa of the second measurement point is: the abscissa value corresponding to the ordinate of the current second measurement point on the waveform between the peak value and the valley value located on the left side of the peak value and closest to the peak value.
[0061] Specifically, the vertical coordinate corresponding to the peak is 5V, the horizontal coordinate corresponding to the peak is 10nm, the vertical coordinate of the valley value located on the left side of the peak and closest to the peak is 4V, the horizontal coordinate of the valley value located on the left side of the peak and closest to the peak is 6nm, the vertical coordinate of the second measurement point is 4.3V, and the horizontal coordinate of the second measurement point is 7.3nm.
[0062] Execute step S4 to calculate the model calibration parameters according to the position parameters corresponding to the measurement points.
[0063] Please Figure 4 Based on reference Figure 5 , Figure 5 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in one embodiment of the present invention Figure 2 , Figure 5 yes Figure 2 The cross-sectional schematic diagram along line AA1 in FIG. 1 shows that the experimental pattern includes a first opening 601 and photoresists 600 located on both sides of the first opening 601 .
[0064] The measurement points on the first waveform 602 correspond to the measurement points on the photoresist 600 .
[0065] Specifically, step S4 includes obtaining position parameters of the first measurement point 604 and position parameters of the second measurement point 605 ; and calculating the line width between the first measurement point 604 and the second measurement point 605 according to the position parameters.
[0066] Among them, the step of calculating the line width between the first measurement point 604 and the second measurement point 605 includes: obtaining the photoresist thickness h1; obtaining the photoresist tilt angle θ1 according to the line width w1 and the photoresist thickness h1; based on the trigonometric function, calculating the photoresist tilt angle θ1 = arctan (h1 / w1), θ1 represents the photoresist tilt angle, h1 represents the photoresist thickness, and w1 represents the line width.
[0067] The line width w1 is the difference between the abscissa of the first measuring point 604 and the abscissa of the second measuring point 605 .
[0068] Step S5 is executed to calibrate the initial pattern correction model based on the photoresist tilt angle θ1, the line width w1, and the photoresist thickness h1.
[0069] Next, taking the experimental pattern in the photoresist as a wide pattern as an example, each step is analyzed and explained.
[0070] In this embodiment, step S1 is performed to obtain a patterned photoresist 700 .
[0071] Please refer to Figure 6 , Figure 6 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in another embodiment of the present invention Figure 1 , the experimental pattern in the photoresist 700 is a wide pattern, wherein the wide pattern can be a photoresist pattern including a second opening 701, and the second opening 701 is located on both sides of the photoresist.
[0072] The step of obtaining the patterned photoresist also includes: obtaining a measurement image of the experimental pattern.
[0073] Specifically, by measuring the experimental pattern, a waveform of an electrical signal of the experimental pattern is obtained, and at the same time, a measurement image of the experimental pattern is obtained.
[0074] In this embodiment, in the step of measuring the experimental pattern and obtaining the waveform of the electrical signal of the experimental pattern, the experimental pattern is measured by CD-SEM to obtain the waveform of the electrical signal of the experimental pattern.
[0075] Before executing step S1 to obtain the patterned photoresist, the method further includes: providing a photoresist layer; and patterning the photoresist layer to form a patterned photoresist layer.
[0076] Step S2 is executed to measure the experimental pattern and obtain a second waveform 702 of the electrical signal of the experimental pattern.
[0077] Please refer to Figure 7 , Figure 7 FIG. 1 is a schematic diagram of a waveform in a calibration method of a graphics correction model in another embodiment of the present invention. Figure 1 The second waveform 702 is a waveform corresponding to the wide graph. Taking the rectangular coordinate system as an example, the horizontal coordinate of the second waveform 702 is the position, and the vertical coordinate of the second waveform 702 is the electrical signal, wherein the position corresponds to the measured wafer (i.e., photoresist) position, and the electrical signal corresponds to the photoresist state of the current wafer position. Specifically, if the currently scanned wafer position is at the edge of photoresist development, an electrical signal peak or valley appears on the second waveform.
[0078] Specifically, the electrical signal may be a voltage signal or a current signal.
[0079] Execute step S3 to locate the measurement point according to the second waveform 702 .
[0080] Specifically, step S3 includes: obtaining the position parameters corresponding to the valley value 703 of the second waveform 702; locating the first measurement point 704 and the second measurement point 705 according to the position parameters corresponding to the valley value 703, and the first measurement point 704 and the second measurement point 705 are respectively located on both sides of the position parameters corresponding to the valley value 703.
[0081] Please refer to Figure 8 , Figure 8 FIG. 1 is a schematic diagram of a waveform in a calibration method of a graphics correction model in another embodiment of the present invention. Figure 2 , the first measurement point 704 is located on the right side of the valley value 703 , and the second measurement point 705 is located on the left side of the valley value 703 .
[0082] In this embodiment, the ordinate of the first measurement point 704 is: half of the sum of the ordinate of the valley value 703 and the ordinate of the peak located on the right side of the valley value 703 and closest to the valley value 703. After obtaining the ordinate of the first measurement point 704, the abscissa of the first measurement point 704 is: the abscissa value corresponding to the ordinate of the current first measurement point 704 on the waveform between the valley value 703 and the peak located on the right side of the valley value 703 and closest to the valley value 703.
[0083] Specifically, the vertical coordinate corresponding to the valley value 703 is 1V, the horizontal coordinate corresponding to the valley value 703 is 10nm, the vertical coordinate of the peak located on the right side of the valley value 703 and closest to the valley value 703 is 5V, the horizontal coordinate of the peak located on the right side of the valley value 703 and closest to the valley value 703 is 14nm, the vertical coordinate of the first measurement point 704 is 3V, and the horizontal coordinate of the first measurement point 704 is 12nm.
[0084] In this embodiment, the ordinate of the second measurement point 705 is: half of the sum of the ordinate of the valley value 703 and the ordinate of the peak located on the left side of the valley value 703 and closest to the valley value 703. After obtaining the ordinate of the second measurement point 705, the abscissa of the second measurement point 705 is: the abscissa value corresponding to the ordinate of the current second measurement point 705 on the waveform between the valley value 703 and the peak located on the left side of the valley value 703 and closest to the valley value 703.
[0085] Specifically, the vertical coordinate corresponding to the valley value 703 is 1V, the horizontal coordinate corresponding to the valley value 703 is 10nm, the vertical coordinate of the peak located on the left side of the valley value 703 and closest to the valley value 703 is 2V, the horizontal coordinate of the peak located on the left side of the valley value 703 and closest to the valley value 703 is 6nm, the vertical coordinate of the first measurement point 704 is 2.5V, and the horizontal coordinate of the first measurement point 704 is 8nm.
[0086] In other embodiments, the ordinate of the first measurement point is: one third of the sum of the ordinate of the valley value and the ordinate of the peak value located on the right side of the valley value and closest to the valley value. After obtaining the ordinate of the first measurement point, the abscissa of the first measurement point is: the abscissa value corresponding to the ordinate of the current first measurement point on the waveform between the valley value and the peak value located on the right side of the valley value and closest to the valley value.
[0087] Specifically, the vertical coordinate corresponding to the valley value is 1V, the horizontal coordinate corresponding to the valley value is 10nm, the vertical coordinate of the peak located on the right side of the valley value and closest to the valley value is 5V, the horizontal coordinate of the peak located on the right side of the valley value and closest to the valley value is 14nm, the vertical coordinate of the first measurement point is 2V, and the horizontal coordinate of the first measurement point is 11.3nm.
[0088] In other embodiments, the ordinate of the second measurement point is: one third of the sum of the ordinate of the valley value and the ordinate of the peak located on the left side of the valley value and closest to the valley value. After obtaining the ordinate of the second measurement point, the abscissa of the second measurement point is: the abscissa value corresponding to the ordinate of the current second measurement point on the waveform between the valley value and the peak located on the left side of the valley value and closest to the valley value.
[0089] Specifically, the vertical coordinate corresponding to the valley value is 1V, the horizontal coordinate corresponding to the valley value is 10nm, the vertical coordinate of the peak located on the left side of the valley value and closest to the valley value is 2V, the horizontal coordinate of the peak located on the left side of the valley value and closest to the valley value is 6nm, the vertical coordinate of the second measurement point is 1.3V, and the horizontal coordinate of the second measurement point is 7.3nm.
[0090] Execute step S4 to calculate the model calibration parameters according to the position parameters corresponding to the measurement points.
[0091] Please Figure 8 Based on reference Fig. 9 , Fig. 9 Schematic diagram of the structure of the photoresist in the calibration method of the pattern correction model in another embodiment of the present invention Figure 2 , Fig. 9 yes Figure 7 The cross-sectional schematic diagram along line BB1 in FIG. 1 shows that the experimental pattern includes a second opening 701 and photoresists located on both sides of the second opening 701 .
[0092] The measurement points on the second waveform 702 correspond to the measurement points on the photoresist.
[0093] Specifically, step S4 includes obtaining the position parameters of the first measurement point 704 and the position parameters of the second measurement point 705 ; and calculating the line width between the first measurement point 704 and the second measurement point 705 according to the position parameters.
[0094] Among them, the step of calculating the line width between the first measurement point 704 and the second measurement point 705 includes: obtaining the photoresist thickness h2; obtaining the photoresist tilt angle θ2 according to the line width w2 and the photoresist thickness h2; based on the trigonometric function, calculating the photoresist tilt angle θ2 = arctan (h2 / w2), θ2 represents the photoresist tilt angle, h2 represents the photoresist thickness, and w2 represents the line width.
[0095] The line width w2 is the difference between the abscissa of the first measuring point 704 and the abscissa of the second measuring point 705 .
[0096] Execute step S5 to calibrate the initial pattern correction model based on the photoresist tilt angle θ2, the line width w2, and the photoresist thickness h2.
[0097] Correspondingly, the present invention also provides a graphic correction method, comprising: obtaining a design layout; obtaining a graphic correction model, wherein the graphic correction model is calibrated by the calibration method described above; and correcting the design layout based on the graphic correction model.
[0098] Wherein, the design layout is a GDS layout.
[0099] Accordingly, please refer to Fig.10 , Fig.10 is a schematic diagram of the structure of a calibration device for a graphics correction model in another embodiment of the present invention. The present invention further provides a calibration device 800 for a graphics correction model, comprising:
[0100] An acquisition unit 801 is used to acquire a patterned photoresist, wherein the photoresist has an experimental pattern;
[0101] A measuring unit 802, used to measure the experimental pattern and obtain the waveform of the electrical signal of the experimental pattern;
[0102] A positioning unit 803, used for positioning a measuring point according to the waveform;
[0103] A calculation unit 804, configured to calculate a model calibration parameter according to the position parameters corresponding to the measurement points;
[0104] The calibration unit 805 is used to calibrate the initial image correction model based on the model calibration parameters to obtain the image correction model.
[0105] An embodiment of the present invention further provides an electronic device, comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, and the processor executes the steps of any of the above methods when running the computer program.
[0106] Regarding the various modules / units included in the various devices and products described in the above embodiments, they can be software modules / units, or hardware modules / units, or they can be partially software modules / units and partially hardware modules / units. For example, for various devices and products applied to or integrated in a chip, the various modules / units included therein can all be implemented in the form of hardware such as circuits, or at least some of the modules / units can be implemented in the form of software programs, which run on a processor integrated inside the chip, and the remaining (if any) modules / units can be implemented in the form of hardware such as circuits; for various devices and products applied to or integrated in a chip module, the various modules / units included therein can all be implemented in the form of hardware such as circuits, and different modules / units can be located in the same component (such as a chip, circuit module, etc.) or different components of the chip module, or at least some of the modules / units can be implemented in the form of hardware such as circuits. The element can be implemented in the form of a software program, which runs on a processor integrated inside the chip module, and the remaining (if any) modules / units can be implemented in the form of hardware such as circuits; for various devices and products applied to or integrated in the terminal, the various modules / units contained therein can be implemented in the form of hardware such as circuits, and different modules / units can be located in the same component (for example, chip, circuit module, etc.) or in different components in the terminal, or, at least some modules / units can be implemented in the form of a software program, which runs on a processor integrated inside the terminal, and the remaining (if any) modules / units can be implemented in the form of hardware such as circuits.
[0107] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.
Claims
1. A method for calibrating an image correction model, for calibrating an initial image correction model, characterized in that: include: Obtaining a patterned photoresist, wherein the photoresist has an experimental pattern; Measuring the experimental pattern and obtaining the waveform of the electrical signal of the experimental pattern; According to the waveform, locate the measuring point; Calculating model calibration parameters according to position parameters corresponding to the measurement points; The initial image correction model is calibrated based on the model calibration parameters to obtain an image correction model.
2. The calibration method of the image correction model according to claim 1, characterized in that: According to the waveform, the steps of locating the measuring point include: Obtaining position parameters corresponding to the peak value or the valley value of the waveform; According to the position parameter corresponding to the peak value or the position parameter corresponding to the valley value, the first measurement point and the second measurement point are located, and the first measurement point and the second measurement point are respectively located on both sides of the position parameter corresponding to the peak value or the position parameter corresponding to the valley value.
3. The calibration method of the image correction model according to claim 2, characterized in that: The step of calculating the model calibration parameters according to the position parameters corresponding to the measurement points comprises: Acquire the position parameters of the first measurement point and the position parameters of the second measurement point; The line width between the first measurement point and the second measurement point is calculated according to the position parameter.
4. The calibration method of the image correction model according to claim 3, characterized in that: The step of calculating the line width between the first measurement point and the second measurement point according to the position parameter further includes: Get the photoresist thickness; A photoresist tilt angle is obtained according to the line width and the photoresist thickness.
5. The calibration method of the image correction model according to claim 4, characterized in that: The step of obtaining the inclination of the photoresist according to the line width and the thickness of the photoresist comprises: Based on trigonometric functions, the photoresist tilt angle θ=arctan(h / w) is calculated, where θ represents the photoresist tilt angle, h represents the photoresist thickness, and w represents the line width.
6. The calibration method of the image correction model according to claim 4, characterized in that: Based on the model calibration parameters, the step of calibrating the initial image correction model includes: The initial pattern correction model is calibrated based on the photoresist tilt angle, the line width, and the photoresist thickness.
7. The calibration method of the image correction model according to claim 1, characterized in that: Also includes: Get the measurement image of the experimental pattern.
8. The method for calibrating a pattern correction model according to claim 7, wherein: The step of acquiring a measurement image of the experimental pattern includes: measuring the experimental pattern, acquiring the waveform of the electrical signal of the experimental pattern, and acquiring the measurement image of the experimental pattern.
9. The method for calibrating a graphic correction model according to claim 1, 7 or 8, characterized in that: In the step of measuring the experimental pattern and obtaining the waveform of the electrical signal of the experimental pattern, the experimental pattern is measured by CD-SEM to obtain the waveform of the electrical signal of the experimental pattern.
10. The method for calibrating a pattern correction model according to claim 1, wherein: Also includes: Prior to the step of obtaining the patterned photoresist, a photoresist layer is provided; The photoresist layer is patterned to form a patterned photoresist layer.
11. A method for correcting a graphic, characterized in that: include: Get the design layout; Obtaining a graphics correction model, wherein the graphics correction model is calibrated by the calibration method described in any one of claims 1 to 10; The design layout is corrected based on the graphic correction model.
12. A calibration device for a graphics correction model, characterized in that: include: An acquisition unit, used for acquiring a patterned photoresist, wherein the photoresist has an experimental pattern; A measuring unit, used to measure the experimental pattern and obtain the waveform of the electrical signal of the experimental pattern; A positioning unit, used for positioning a measuring point according to the waveform; A calculation unit, used to calculate the model calibration parameters according to the position parameters corresponding to the measurement points; The calibration unit is used to calibrate the initial image correction model based on the model calibration parameters to obtain the image correction model.
13. An electronic device comprising a memory and a processor, wherein the memory stores a computer program that can be run on the processor, wherein: When the processor runs the computer program, the steps of the method according to any one of claims 1 to 10 are performed.