Semiconductor power module
By designing a combination of an inverter unit and a liquid tank in a semiconductor power module, the heat dissipation column of the terminals is used to directly transfer heat to the coolant, solving the problem of low heat dissipation efficiency in the prior art, achieving more efficient heat dissipation and longer service life.
Patent Information
- Application Number
- CN202311100380.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-29
- Publication Date
- 2025-02-28
AI Technical Summary
After long-term operation, the existing semiconductor power modules have low heat dissipation efficiency due to heat accumulation, which affects the normal operation of the module and even causes damage.
A semiconductor power module is designed, which uses the heat dissipation column of the AC terminal and the DC positive terminal to directly transfer heat to the coolant through the combination of the inverter unit and the liquid tank, avoiding the medium of the insulating layer and improving the heat transfer efficiency.
It achieves more efficient heat dissipation, reduces the risk of heat accumulation, extends the service life of semiconductor power modules, and reduces the cost of heat dissipation.
Smart Images
Figure CN119542278A_ABST
Abstract
Description
Technical Field
[0001] The present application mainly relates to the field of semiconductor device packaging, and specifically to a semiconductor power module. Background Art
[0002] Semiconductor power modules are one of the core components of power drive devices in new energy vehicles. The power of a single power chip is low, and semiconductor power modules usually use multiple power chips in parallel to increase power density. Multiple power chips will generate a lot of heat after long-term operation. If the heat is not dissipated in a timely and effective manner, it will affect the normal operation of the semiconductor power module and even cause damage to the semiconductor power module.
[0003] In the existing water cooling solution, an insulating layer is set between the water cooling device and the power chip, and the heat generated by the power chip is transferred to the water cooling device through the insulating layer. As the switching speed of the power chip is getting faster and faster, the heat generated by it is significantly higher than that of the previous low-power chip; in addition, the size of the power chip is getting smaller and smaller, and the number of power chips placed per unit area is gradually increasing, and the heat dissipation requirements per unit area are also higher. Summary of the invention
[0004] The technical problem to be solved by the present application is to provide a semiconductor power module, which can dissipate heat from a power chip in a timely and effective manner.
[0005] The technical solution adopted by the present application to solve the above-mentioned technical problems is a semiconductor power module, comprising: a plurality of inverter units, each of the inverter units comprising a plurality of power chips, an AC terminal, a DC positive terminal and a DC negative terminal, the upper surface of the AC terminal being connected to the plurality of power chips, the AC terminal having a plurality of first heat dissipation columns arranged on the lower surface, the upper surface of the DC positive terminal being connected to the plurality of power chips, the positive DC terminal having a plurality of second heat dissipation columns arranged on the lower surface; and a liquid tank having a groove for accommodating a coolant, the lower surface of the AC terminal facing the groove, the first heat dissipation column extending into the groove, the lower surface of the DC positive terminal facing the groove, the second heat dissipation column extending into the groove, and the coolant being an insulating liquid.
[0006] In one embodiment of the present application, the groove includes adjacent first sub-groove and second sub-groove, the lower surface of the AC terminal faces the first sub-groove, the first heat dissipation column extends into the first sub-groove, the lower surface of the DC positive terminal faces the second sub-groove, and the second heat dissipation column extends into the second sub-groove.
[0007] In one embodiment of the present application, the first sub-groove has a first liquid inlet and a first liquid outlet, and the second sub-groove has a second liquid inlet and a second liquid outlet, wherein the coolant enters the groove from the liquid inlet and is discharged from the groove from the liquid outlet.
[0008] In an embodiment of the present application, the plurality of power chips are arranged into a first row of power chips and a second row of power chips, and the first row of power chips and the second row of power chips are arranged adjacent to each other.
[0009] In an embodiment of the present application, an upper surface of the AC terminal is connected to the drain of the first row of power chips and the source of the second row of power chips.
[0010] In an embodiment of the present application, the upper surface of the DC positive terminal is connected to the drain of the second row of power chips, and the upper surface of the DC negative terminal is connected to the source of the first row of power chips.
[0011] In an embodiment of the present application, the groove further includes a third sub-groove, the first sub-groove is located between the second sub-groove and the third sub-groove, wherein the lower surface of the DC negative terminal faces the third sub-groove.
[0012] In an embodiment of the present application, the materials of the AC terminal, the DC positive terminal and the DC negative terminal are all made of metallic copper.
[0013] In one embodiment of the present application, a plurality of sealing rings are further included, each of which is arranged between a corresponding inverter unit and the groove to seal the groove.
[0014] On the other hand, the present application further proposes a motor controller, which includes the power module mentioned above.
[0015] The heat transfer path of the semiconductor power module of the present application does not pass through the insulating layer, but is directly transferred to the coolant through the terminal, which has the advantage of high heat dissipation efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings, wherein:
[0017] Figure 1 is a three-dimensional schematic diagram of a semiconductor power module according to an embodiment of the present application;
[0018] Figure 2A is a three-dimensional schematic diagram of a semiconductor power module according to another embodiment of the present application;
[0019] Figure 2B yes Figure 2AA top view of a semiconductor power module;
[0020] Figure 2C yes Figure 2B A schematic cross-sectional view of the semiconductor power module along line AA;
[0021] Figure 2D yes Figure 2C A partial enlarged schematic diagram of the middle circle B;
[0022] Figure 3A and Figure 3B is a three-dimensional schematic diagram of an inverter unit according to an embodiment of the present application;
[0023] Figure 3C yes Figure 3A A top view schematic diagram of the middle inverter unit;
[0024] Figure 3D yes Figure 3A A bottom view of the middle inverter unit;
[0025] Figure 3E yes Figure 3A Schematic diagram of the main view of the inverter unit.
[0026] Reference numerals
[0027] Inverter unit 110 Lower surface 113b First sub-groove 121a
[0028] Power chip 111 Second heat dissipation column 113c First liquid inlet 121a-1
[0029] First row of power chips 111a DC negative terminal 114 First liquid outlet 121a-2
[0030] The second row of power chips 111b The upper surface 114a The second sub-groove 121b
[0031] AC terminal 112 Lower surface 114b Second liquid inlet 121b-1
[0032] Upper surface 112a Shell 115 Second liquid outlet 121b-2
[0033] Lower surface 112b Second mounting hole 116 Third sub-groove 121c
[0034] First heat dissipation column 112c Positioning pin 117 First mounting hole 122
[0035] DC positive terminal 113 liquid tank 120 positioning hole 123
[0036] Upper surface 113a Groove 121 Sealing ring 130 DETAILED DESCRIPTION
[0037] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are described in detail below with reference to the accompanying drawings.
[0038] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application may also be implemented in other ways different from those described herein, and therefore the present application is not limited to the specific embodiments disclosed below.
[0039] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.
[0040] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.
[0041] Next, the semiconductor power module of the present application is described through specific embodiments.
[0042] Figure 1 is a three-dimensional schematic diagram of a semiconductor power module according to an embodiment, Figure 2A is a three-dimensional schematic diagram of a semiconductor power module according to another embodiment, Figure 2B yes Figure 2A A top view of a semiconductor power module. Figure 2C yes Figure 2B The schematic cross-sectional view of the semiconductor power module along the AA line. Figure 2D yes Figure 2C A partial enlarged diagram of the circle B in the middle. Figures 1 to 2D As shown, the semiconductor power module includes three inverter units 110 and a liquid tank 120. The three inverter units 110 are arranged above the liquid tank 120 along a first direction D1 and are arranged adjacent to each other along a second direction D2. The three inverter units 110 can form three phases U, V, and W for converting direct current into three-phase alternating current. In some embodiments, the number of the inverter units 110 can also be two.
[0043] like Figure 1 As shown, each inverter unit 110 includes a plurality of power chips 111, an AC terminal 112, a DC positive terminal 113, and a DC negative terminal 114. Figure 1 In the figure, for the sake of simplicity, the power chips on the two inverter units 110 on the right are omitted. Figure 1 In the embodiment, a plurality of power chips 110 are arranged into a first row of power chips 111a and a second row of power chips 111b. The first row of power chips 111a and the second row of power chips 111b are arranged adjacent to each other in the second direction D2. Each row includes six power chips 111 arranged adjacent to each other in the third direction D3. The number of power chips 111 on each inverter unit 110 is not limited to Figure 1 The number of power chips 111 can be changed according to the demand. The power chip 111 of the present application can be selected from silicon carbide-based metal oxide semiconductor field effect transistor (SiCMOSFET), silicon-based metal oxide semiconductor field effect transistor (SiMOSFET), gallium nitride high electron mobility transistor (GaNHEMT) or insulated gate bipolar transistor (IGBT).
[0044] Figure 3A and Figure 3B is a three-dimensional schematic diagram of an inverter unit of an embodiment, Figure 3C yes Figure 3A A top view of the inverter unit. Figure 3D yes Figure 3A The bottom view of the inverter unit. Figure 3E yes Figure 3A The main view of the inverter unit. FIG. 3A to FIG. 3E As shown, the AC terminal 112 has an upper surface 112a and a lower surface 112b opposite to each other. Figure 1 , FIG. 3A to FIG. 3E As shown, the upper surface 112a of the AC terminal 112 is connected to the drain of the first row of power chips 111a, and the upper surface 112a is also connected to the source of the second row of power chips 111b. Figure 3C As shown, the upper surface 112a can be connected to the drain of the first row of power chips 111a through the drain pad 112a-1 and to the source of the second row of power chips 111b through the source pad 112a-2. In this way, the AC terminal 112 can establish an electrical connection with the power chip 111.
[0045] like Figure 3C and 3D As shown, the DC positive terminal has an upper surface 113a and a lower surface 113b opposite to each other. The DC negative terminal has an upper surface 114a and a lower surface 114b opposite to each other. Figure 1As shown, the upper surface 113a of the DC positive terminal is connected to the drain of the second row of power chips 111b, and the upper surface 113a can be connected to the drain of the second row of power chips 111b through the drain pad 113a-1. The upper surface 114a of the DC negative terminal is connected to the source of the first row of power chips 111a, and the upper surface 114a can be connected to the source of the first row of power chips 111a through the source pad 114a-1. In this way, the DC positive terminal 113 and the DC negative terminal 114 can establish electrical connections with the power chips respectively.
[0046] refer to FIG. 3A to FIG. 3D As shown, the inverter unit 110 includes a housing 115. The housing 115 covers the upper surface 112a of the AC terminal 112, the upper surface 113a of the DC positive terminal 113, and the upper surface 114a of the DC negative terminal 114. Figure 3C Only a portion of the upper surface of each terminal can be seen in the figure. In some embodiments, the housing 115 and each terminal can be formed by an inlay casting process.
[0047] refer to FIG. 3B to FIG. 3E As shown, the AC terminal 112 has a plurality of first heat dissipation columns 112c disposed on the lower surface 112b. One end of the first heat dissipation column 112c is connected to the lower surface 112b, and the other end extends downward in the first direction D1. The AC terminal 112 and the first heat dissipation column 112c can be integrally formed, for example, by a casting process. Figure 3D As shown, a plurality of first heat dissipation columns 112c are distributed on the lower surface 112b, and a certain distance is spaced between two adjacent first heat dissipation columns 112c, which is conducive to heat exchange between the first heat dissipation columns 112c and the coolant. The present application does not limit the number, cross-sectional shape, and arrangement of the first heat dissipation columns 112c.
[0048] Similar to the first heat dissipation column 112c in the AC terminal 112, the DC positive terminal 113 has a plurality of second heat dissipation columns 113c disposed on the lower surface 113b. Figure 3D and Figure 3E As shown, one end of the second heat dissipation column 113c is connected to the lower surface 113b, and the other end extends downward in the first direction D1. The DC positive terminal 113 and the second heat dissipation column 113c can be integrally formed, such as Figure 3D As shown, a plurality of second heat dissipation columns 113c are distributed on the lower surface 113b, and a certain distance is spaced between two adjacent second heat dissipation columns 113c, which is conducive to heat exchange between the second heat dissipation columns 113c and the coolant. The present application does not limit the number, cross-sectional shape, and arrangement of the second heat dissipation columns 113c.
[0049] refer to Figure 2A and Figure 2C As shown, the liquid tank 120 has a groove 121, and the groove 121 can be used to contain the cooling liquid. The groove 121 can be further divided into a first sub-groove 121a and a second sub-groove 121b. The first sub-groove 121a and the second sub-groove 121b are adjacently distributed in the second direction D2, and have a certain depth in the first direction D1, and each groove has an opening facing upward in the first direction D1.
[0050] Combination Figure 1 and Figure 2C As shown, the liquid tank 120 has three grooves 121 adjacently distributed in the second direction D2, and each groove 121 covers the corresponding inverter unit 110. The groove 121 can be used to accommodate the coolant, and the heat dissipation column of the terminal can extend into the corresponding groove, so as to perform heat exchange with the coolant in the groove to dissipate heat for the power chip, which is specifically described as follows.
[0051] refer to Figure 2C , Figure 2D and Figure 3D As shown, the inverter unit 110 covers the groove 121, the lower surface 112b of the AC terminal 112 faces the first sub-groove 121a, and the first heat dissipation column 112c extends into the first sub-groove 121a. The lower surface 113b of the DC positive terminal 113 faces the second sub-groove 121b, and the second heat dissipation column 113c extends into the second sub-groove 121b. The heat dissipation column that penetrates into the groove is in direct contact with the coolant in the groove. Thanks to the fact that the heat dissipation column is part of the terminal, the heat generated by the power chip and the heat generated by the terminal can be directly transferred to the heat dissipation column, and the heat dissipation column directly transfers the heat to the coolant in contact with it. In some embodiments, in order to improve the conductivity and heat dissipation performance of the terminal, the materials of the AC terminal, the DC positive terminal and the DC negative terminal are all made of metallic copper.
[0052] In existing water cooling solutions, an insulating layer (or other material layer, such as an interface thermal material layer) is provided between the heat sink and the power chip (or terminal), and the terminal is not in direct contact with the coolant. In the present application, no insulating layer is provided between the liquid tank and the power chip, and the heat generated by the power chip is directly transferred to the coolant through the terminal, which has the advantage of high heat dissipation efficiency. In other words, the heat transfer path of the present application is: power chip-terminal-coolant, and the heat transfer path of the prior art is: power chip-terminal-insulating layer-coolant. Therefore, the present application has the advantages of a short heat transfer path and high heat dissipation efficiency. In addition, the present application also saves an insulating layer or an interface thermal material layer.
[0053] In the prior art, the tank body for containing the coolant is made of metal and has no other openings except the coolant inlet and outlet. The liquid tank 120 in the present application is made of plastic material and has an open opening except the coolant inlet and outlet, because the liquid tank 120 has the advantage of low cost.
[0054] The coolant in the groove is an insulating liquid. When the semiconductor power module is working, the heat dissipation column connected to the terminal will be charged. Since the coolant is not conductive, the charged heat dissipation column will not affect other electrical units in the semiconductor power module.
[0055] refer to Figure 2A and Figure 2B As shown, in one embodiment, the first sub-recess 121a has a first liquid inlet 121a-1 and a first liquid outlet 121a-2. The first liquid inlet 121a-1 and the first liquid outlet 121a-2 are both arranged at the bottom of the first sub-recess 121a. Cooling liquid can be provided into the first sub-recess 121a through the first liquid inlet 121a-1, and the cooling liquid in the first sub-recess 121a can be discharged through the first liquid outlet 121a-2, so that a flowing cooling liquid is formed in the first sub-recess 121a.
[0056] Similarly, the second sub-recess 121b has a second liquid inlet 121b-1 and a second liquid outlet 121b-2. The second liquid inlet 121b-1 and the second liquid outlet 121b-2 are both arranged at the bottom of the second sub-recess 121b. Cooling liquid can be provided to the first sub-recess 121a through the second liquid inlet 121b-1, and the cooling liquid in the first sub-recess 121a can be discharged through the second liquid outlet 121b-2, so that flowing cooling liquid is formed in the second sub-recess 121b.
[0057] refer to Figure 2A As shown, in some embodiments, the groove 121 further includes a third sub-groove 121c. The first sub-groove 121a is located between the second sub-groove 121b and the third sub-groove 121c in the second direction D2. Figure 1 , Figure 2A and Figure 3B As shown, the lower surface 114a of the DC negative terminal 114 faces the third sub-groove 121c. The reason why no heat dissipation column is provided on the lower surface 114a of the DC negative terminal 114 is that the DC negative terminal 114 is connected to the source of the power chip 111, and the heat transferred from the power chip to the DC negative terminal 114 and the heat generated by the DC negative terminal 114 itself are relatively small. Of course, a heat dissipation column similar to that in the AC terminal can also be provided on the lower surface 114a of the DC negative terminal 114.
[0058] refer to Figure 3B and Figure 3D As shown, in one embodiment, the power module further includes three sealing rings (not shown). The three sealing rings are respectively arranged around the AC terminal 112, the DC positive terminal 113 and the DC negative terminal 114, and are close to the lower surface of the corresponding terminal. Figure 3DThe sealing ring 130 located around the DC negative terminal 114 is shown in FIG. Figure 1 As shown, after the inverter unit 110 is combined with the liquid tank 120 , each sealing ring is located between the corresponding inverter unit 110 and the groove in the first direction D1 to seal the groove.
[0059] refer to Figure 2A , Figure 3A and Figure 3B As shown, the combination method between the inverter unit 110 and the liquid tank 120 is described below. Figure 2A As shown, a row of first mounting holes 122 are distributed on both sides of each tank body 121 in the liquid tank 120, wherein adjacent tank bodies 121 share a row of first mounting holes 122, which is beneficial to reducing the volume of the power module and the cost of machining the mounting holes. Positioning holes 123 are also distributed on both sides of each tank body 121. Figure 3A As shown, a row of second mounting holes 116 are distributed on both sides of each inverter unit 110. Figure 3B As shown, positioning pins 117 are distributed on both sides of each inverter unit 110. Figure 2A , Figure 3A and Figure 3B As shown, the positioning pin 117 of each inverter unit 110 is inserted into the corresponding positioning hole 123. After the inverter unit 110 is positioned, the first mounting hole 122 is aligned with the corresponding second mounting hole 116. Then, the first mounting hole 122 and the corresponding second mounting hole 116 can be connected by a bolt or other connecting member, so as to realize the combination between the inverter unit 110 and the liquid tank 120. It should be understood that the combination between the inverter unit 110 and the liquid tank 120 is not limited to the above embodiment.
[0060] On the other hand, the present application also provides a motor controller, which includes the power module mentioned above. The motor controller has the advantages of high heat dissipation efficiency and low heat dissipation cost.
[0061] The basic concepts have been described above. Obviously, for those skilled in the art, the above application disclosure is only an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.
[0062] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.
[0063] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values is as accurate as possible within the feasible range.
Claims
1. A semiconductor power module, characterized in that: include: A plurality of inverter units, each of which includes a plurality of power chips, an AC terminal, a DC positive terminal, and a DC negative terminal, wherein the upper surface of the AC terminal is connected to the plurality of power chips, the AC terminal has a plurality of first heat dissipation columns arranged on the lower surface, the upper surface of the DC positive terminal is connected to the plurality of power chips, and the positive DC terminal has a plurality of second heat dissipation columns arranged on the lower surface; as well as The liquid tank has a groove for accommodating a coolant, the lower surface of the AC terminal faces the groove, the first heat dissipation column extends into the groove, the lower surface of the DC positive terminal faces the groove, the second heat dissipation column extends into the groove, and the coolant is an insulating liquid.
2. The power module according to claim 1, characterized in that: The groove includes adjacent first sub-groove and second sub-groove, the lower surface of the AC terminal faces the first sub-groove, the first heat dissipation column extends into the first sub-groove, the lower surface of the DC positive terminal faces the second sub-groove, and the second heat dissipation column extends into the second sub-groove.
3. The power module according to claim 2, characterized in that: The first sub-groove has a first liquid inlet and a first liquid outlet, and the second sub-groove has a second liquid inlet and a second liquid outlet, wherein the coolant enters the groove from the liquid inlet and is discharged from the groove from the liquid outlet.
4. The power module according to claim 1, characterized in that: The plurality of power chips are arranged into a first row of power chips and a second row of power chips, and the first row of power chips and the second row of power chips are arranged adjacent to each other.
5. The power module according to claim 4, characterized in that: The upper surface of the AC terminal is connected to the drains of the first row of power chips and the sources of the second row of power chips.
6. The power module according to claim 5, characterized in that: The upper surface of the DC positive terminal is connected to the drain of the second row of power chips, and the upper surface of the DC negative terminal is connected to the source of the first row of power chips.
7. The power module according to claim 2, characterized in that: The groove further includes a third sub-groove, the first sub-groove is located between the second sub-groove and the third sub-groove, wherein the lower surface of the DC negative terminal faces the third sub-groove.
8. The power module according to claim 1, characterized in that: The AC terminal, the DC positive terminal and the DC negative terminal are all made of metal copper.
9. The power module according to claim 1, characterized in that It also includes a plurality of sealing rings, each of which is arranged between a corresponding inverter unit and the groove to seal the groove.
10. A motor controller, characterized in that: Includes a power module as described in any one of 1-9.