Wafer level package assembly with side wettable structure and manufacturing method thereof

By forming a side wetable structure in the half-cut groove of the wafer, it is directly cut on the wafer to form an independent packaging component, which solves the complex process and heat dissipation problems of traditional packaging methods, and achieves the effect of simplifying the process and reducing costs.

CN119542320APending Publication Date: 2025-02-28PAN JIT INT
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Patent Information

Application Number
CN202311090007.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2023-08-28
Publication Date
2025-02-28

AI Technical Summary

Technical Problem

The packaging method of traditional semiconductor components requires first cutting the grains from the wafer, resulting in complex processes such as sticking, sealing, and grinding, which increases costs, and the use of solid-state mold sealing materials leads to heat dissipation problems.

Method used

A wafer-level packaging assembly with a side wettable structure is adopted. By forming a side wettable structure in the half-cut groove of the wafer, it is directly cut on the wafer to form an independent packaging assembly, avoiding processes such as sticking crystals, sealing glue, and grinding. The wafer itself is used as a substrate to avoid heat dissipation problems caused by solid-state mold sealing materials.

Benefits of technology

The packaging process steps are simplified, process costs are reduced, and heat dissipation problems caused by solid-state mold sealing materials are avoided, and the performance of packaging components is improved.

✦ Generated by Eureka AI based on patent content.

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Abstract

The invention relates to a wafer-level package assembly with a side wettable structure and a manufacturing method thereof. The wafer-level package assembly comprises a substrate, a functional area, a first protective layer and a redistribution layer. Semi-cut grooves are formed in the two opposite side edges of the base material respectively. The functional area is wrapped in the base material and is provided with a connecting pad exposed out of the top surface of the base material. The first protective layer is disposed on the top surface of the substrate and has an opening to expose the connecting pad of the functional region. The redistribution layer is arranged on the first protection layer, is provided with a redistribution circuit, is used for being connected with the connection pad, and extends into the semi-cut groove. In the manufacturing process, the crystal grains do not need to be cut off from the wafer firstly, so that the manufacturing processes of crystal bonding, glue sealing, grinding and the like do not need to be carried out, the manufacturing process steps can be simplified, and the cost can be reduced.
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Description

Technical Field

[0001] The present invention relates to a wafer-level semiconductor component packaging technology, in particular to a wafer-level packaging component with a side wettable structure and a manufacturing method thereof. Background Art

[0002] The traditional packaging method of semiconductor components is to cut the wafer into dies and then package them into a packaged component.

[0003] Please see Figure 5 and Figure 6 , which is an appearance diagram and a cross-sectional structure diagram of one of the current packaging components 50. Figure 5 As shown, the packaging component 50 has two connection pads 51 disposed on one surface. Figure 6 As shown, generally speaking, the packaging component 50 includes a die 52 and a redistribution layer (RDL) 53. The die 52 is disposed in a first substrate 501, such as an epoxy molding compound (EMC). And the two pins 522 of a top surface 521 of the die 52 are connected to the two connection pads 51 disposed on the surface through a redistribution line 531 in the redistribution layer 53. A second substrate 502 and a third substrate 503 are respectively disposed on opposite sides of the first substrate 501. The redistribution layer 53 is disposed in the second substrate 502. And the third substrate 503 is used to cover a bottom surface 523 of the die 52.

[0004] However, the current method of packaging the package component 50 requires cutting the die 52 from the wafer (not shown) first. Therefore, when packaging the die 52, processes such as die bonding, molding, and grinding are required to complete the packaging of the die 52.

[0005] The packaging component manufactured by the above method has the following disadvantages:

[0006] First, it is necessary to perform processes such as die bonding, sealing, and grinding, thereby increasing the manufacturing cost of the packaging component 50.

[0007] Second, using solid mold encapsulation material (EMC) as the substrate will cause heat dissipation problems. Summary of the invention

[0008] According to a preferred embodiment of the present invention, the present invention provides a wafer-level package component with a side-wettable structure, comprising:

[0009] A substrate having a top surface and two opposite first side surfaces; wherein the two opposite side edges of the top surface are respectively connected to the two first side surfaces, and a half-cut groove is respectively formed at the connection between the two first side surfaces and the top surface;

[0010] A function area is enclosed in the substrate, and a plurality of connection pads are formed on an upper surface of the function area; wherein the connection pads of the function area are respectively exposed from the top surface of the substrate;

[0011] a first protective layer, disposed on the top surface of the substrate and having a plurality of openings; wherein the connection pads of the functional area are respectively exposed from the openings of the first protective layer;

[0012] A redistribution layer is disposed on an upper surface of the first protective layer and has a plurality of redistribution circuits; wherein the redistribution circuits respectively have a connection end and a welding end, and the connection ends of the redistribution circuits are respectively electrically connected to the connection pads of the functional area, and the welding ends of the redistribution circuits respectively extend into the half-cut grooves of the substrate.

[0013] According to a preferred embodiment of the present invention, the present invention provides a method for manufacturing a wafer-level package component having a side wettable structure, the method comprising:

[0014] A wafer is prepared; wherein the wafer has a substrate, a plurality of functional areas and a plurality of cutting paths, wherein the cutting paths are respectively formed between the functional areas; wherein a plurality of connection pads are respectively formed on an upper surface of the functional areas;

[0015] Performing half-cutting on the scribe lines of the wafer, half-cutting the wafer from an upper surface of the wafer to a lower half, so as to form a plurality of half-cut grooves;

[0016] Cutting is performed on a predetermined cutting path of the substrate, and the substrate and the lead frame are completely cut downward from the surface of the substrate to form a plurality of independent packaging components;

[0017] A first protective layer is formed on the upper surface of the wafer; wherein the first protective layer has a plurality of openings, and the connection pads of the functional areas are respectively exposed from the openings of the first protective layer;

[0018] A redistribution layer is formed on an upper surface of the first protective layer; wherein the redistribution layer has a plurality of redistribution lines, and the redistribution lines respectively have a connection end and a welding end, the connection ends of the redistribution lines are respectively electrically connected to the connection pads of the functional area, and the welding ends of the redistribution lines respectively extend into the half-cut grooves.

[0019] Compared with the prior art, the present invention does not need to cut the die from the wafer first, but directly forms a side wettable structure in the half-cut groove of the wafer, so there is no need to perform processes such as die bonding, molding, and grinding, and the substrate is the substrate of the wafer, not solid mold encapsulation material (EMC). Therefore, it can achieve the effect of simplifying the process steps and avoiding the heat dissipation problem caused by EMC, and can reduce the process cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 : Schematic diagram of the appearance of a wafer-level packaging component with a side wettable structure according to the present invention.

[0021] Figure 2 : A schematic cross-sectional view of a wafer-level packaging component having a side wettable structure according to the present invention.

[0022] Figure 3A to Figure 3H : A flowchart of the manufacturing method of a first embodiment of a wafer-level packaging component with a side wettable structure of the present invention.

[0023] Figures 4A to 4F : A flowchart of the manufacturing method of a second embodiment of a wafer-level packaging component with a side wettable structure of the present invention.

[0024] Figure 5 : Schematic diagram of the appearance of existing packaging components.

[0025] Figure 6 : Schematic diagram of the cross-section of the existing packaging component. DETAILED DESCRIPTION

[0026] The present invention is a wafer-level packaging component with a side wettable structure. Figure 1 and Figure 2 As shown in the schematic diagram and cross-sectional diagram, the wafer-level packaging component 1 with a side-wettable structure includes a substrate 10, a functional area 20, a first protection layer 30, a redistribution layer 40, a second protection layer 50 and a plurality of edge welding pads 60.

[0027] The substrate 10 has a top surface 101 and two opposite first side surfaces 102. The two opposite sides of the top surface 101 are respectively connected to the two first side surfaces 102, and a half-cut groove 103 is formed at the connection between the two first side surfaces 102 and the top surface 101. Preferably, the substrate 10 is a silicon dielectric material or silicon.

[0028] The functional area 20 is enclosed within the substrate 10 , and a plurality of connection pads 201 are formed on an upper surface of the functional area 20 . The connection pads 210 of the functional area 20 are exposed from the top surface 101 of the substrate 10 .

[0029] The first protection layer 30 is disposed on the top surface 101 of the substrate 10 and has a plurality of openings 301. The connection pads 201 of the functional area 20 are respectively exposed from the openings 301 of the first protection layer 30. Preferably, the first protection layer 30 is a polyimide (PI) material.

[0030] The redistribution layer 40 is disposed on an upper surface of the first protection layer 30 and has a plurality of redistribution circuits 401. The redistribution circuits 401 respectively have a connection end 402 and a welding end 403, and the connection ends 402 of the redistribution circuits 401 are respectively electrically connected to the connection pads 201 of the functional area 20, and the welding ends 403 of the redistribution circuits 401 extend into the half-cut grooves 103 of the substrate 10.

[0031] The second protection layer 50 is disposed on an upper surface of the redistribution layer 40 and covers the connection ends 402 of the redistribution circuits 401 .

[0032] The edge soldering pads 60 are respectively electrically connected to the soldering ends 403 of the redistribution circuits 401. One side of the edge soldering pads 60 is a concave arc surface, and each edge soldering pad 60 is spaced apart from the substrate 10. In other words, the edge soldering pads 60 do not directly contact the substrate.

[0033] In addition, according to a first embodiment of the present invention, referring to Figure 3A to Figure 3H The present invention also provides a method for manufacturing a wafer-level packaging component with a side wettable structure, the method comprising:

[0034] Please refer to Figure 3A As shown, first, a wafer 100 is prepared. The wafer 100 has a substrate 10, a plurality of functional regions 20 and a plurality of scribe lines 104, and the scribe lines 104 are respectively formed between the functional regions 20. A plurality of connection pads 201 are respectively formed on an upper surface of the functional regions 20.

[0035] Please refer to Figure 3B As shown, a half-cutting knife 105 is used to perform half-cutting on the cutting streets 104 of the wafer 100 , and the wafer 100 is half-cut from an upper surface of the wafer 100 to a lower half.

[0036] Please refer to Figure 3C As shown, after the half-cutting is completed, a plurality of half-cut grooves 103 are formed in the cutting streets 104 .

[0037] Please refer to Figure 3DAs shown, then, a first protective layer 30 is formed on the upper surface of the wafer 100. The first protective layer 30 has a plurality of openings 301, and the connection pads 201 of the functional areas 20 are respectively exposed from the openings 301 of the first protective layer 30. In the present embodiment, the openings 301 are formed by etching, laser or exposure and development of the first protective layer 30, but not limited thereto. In addition, for example, a notch width W1 of the half-cut grooves 103 is approximately 50 to 200 microns (μm), a groove bottom width W2 is smaller than the notch width W1, and a groove depth D1 is not more than half of the thickness of the wafer 100.

[0038] Please refer to Figure 3E As shown, further, a redistribution layer 40 is formed on an upper surface of the first protective layer 30. The redistribution layer 40 has a plurality of redistribution circuits 401, and the redistribution circuits 401 respectively have a connection end 402 and a welding end 403, the connection ends 402 of the redistribution circuits 401 are respectively electrically connected to the connection pads 201 of the functional area 20, and the welding ends 403 of the redistribution circuits 401 extend into the half-cut grooves 103 respectively.

[0039] Please refer to Figure 3F As shown, a second protection layer 50 is formed at the position corresponding to the functional areas 20 on the upper surface of the redistribution layer 40. The second protection layers 50 cover the connection ends 402 of the redistribution circuit 401 respectively.

[0040] Please refer to Figure 3G As shown, an edge welding pad 60 is formed on an upper surface of each of the welding ends 403 of the redistribution circuit 401. Preferably, a side surface of each of the edge welding pads 60 is a concave arc surface.

[0041] Please refer to Figure 3G and Figure 3H As shown, further, a full cutting blade 106 is used to cut the cutting streets 104 of the wafer 100 , and the substrate 10 of the wafer 100 is completely cut downward from the upper surface of the wafer 100 to form a plurality of independent wafer-level packaging components 1 .

[0042] In addition, according to a second embodiment of the present invention, referring to Figure 4A to Figure 4F The process flow chart shown in FIG. 1 comprises:

[0043] Please refer to Figure 4A As shown, first, a wafer 100 is prepared. The wafer 100 has a substrate 10, a plurality of functional regions 20 and a plurality of scribe lines 104, and the scribe lines 104 are respectively formed between the functional regions 20. A plurality of connection pads 201 are respectively formed on an upper surface of the functional regions 20.

[0044] Please refer to Figure 4B As shown, a half-cutting knife 105 is used to perform half-cutting on the cutting streets 104 of the wafer 100 , and the wafer 100 is half-cut from an upper surface of the wafer 100 to a lower half.

[0045] Please refer to Figure 4C As shown, after the half-cutting is completed, a plurality of half-cut grooves 103 are formed in the cutting streets 104 .

[0046] Please refer to Figure 4D As shown, a first protection layer 30 is then formed on the upper surface of the wafer 100. The first protection layer 30 has a plurality of openings 301, and the connection pads 201 of the functional areas 20 are respectively exposed from the openings 301 of the first protection layer 30.

[0047] Please refer to Figure 4E As shown, a redistribution layer 40 is formed on an upper surface of the first protective layer 30. The redistribution layer 40 has a plurality of redistribution circuits 401, and the redistribution circuits 401 respectively have a connection end 402 and a welding end 403, the connection ends 402 of the redistribution circuits 401 are respectively electrically connected to the connection pads 201 of the functional area 20, and the welding ends 403 of the redistribution circuits 401 extend into the half-cut grooves 103 respectively.

[0048] Please refer to Figure 4E and Figure 4F As shown, further, a full cutting blade 106 is used to cut the cutting streets 104 of the wafer 100 , and the substrate 10 of the wafer 100 is completely cut downward from the upper surface of the wafer 100 to form a plurality of independent wafer-level packaging components 1 .

[0049] In the second embodiment, since the connection pads 201 on the functional areas 20 are far apart, it is not necessary to additionally provide the second protection layer 50 and the edge welding pads 60 .

[0050] In summary, compared with the existing packaging components and manufacturing methods, the present invention not only has the characteristics of the side wettable structure itself, but also has the following features:

[0051] First, the present invention does not need to cut the die from the wafer 100 and place it in the packaging material for subsequent processing operations, but directly forms a side wettable structure in the half-cut groove 103, and then performs full cutting, cutting the die with the side wettable structure from the wafer 100 to form a plurality of independent wafer-level packaging components. Therefore, the present invention does not need to perform processes such as die bonding, molding, and grinding, which can reduce the process cost.

[0052] Second, the substrate 10 is the substrate of the wafer 100 rather than a solid molding material, thereby avoiding the heat dissipation problem caused by a non-solid molding material.

Claims

1. A wafer-level packaging component with a side-wettable structure, comprising: A substrate has a top surface and two opposite first side surfaces; wherein, Two opposite sides of the top surface are respectively connected to the two first side surfaces, and a half-cut groove is formed at the connection between the two first side surfaces and the top surface; A functional area is enclosed in the substrate, and a plurality of connection pads are formed on an upper surface of the functional area; wherein the connection pads of the functional area are respectively exposed from the top surface of the substrate; a first protective layer, disposed on the top surface of the substrate and having a plurality of openings; wherein the connection pads of the functional area are respectively exposed from the openings of the first protective layer; A redistribution layer is disposed on an upper surface of the first protective layer and has a plurality of redistribution circuits; wherein the redistribution circuits respectively have a connection end and a welding end, and the connection ends of the redistribution circuits are respectively electrically connected to the connection pads of the functional area, and the welding ends of the redistribution circuits respectively extend into the half-cut grooves of the substrate.

2. The wafer-level package assembly with a side-wettable structure according to claim 1, further comprising: A second protection layer is disposed on an upper surface of the redistribution layer and covers the connection ends of the redistribution lines.

3. The wafer-level package assembly with a side-wettable structure according to claim 1, further comprising: A plurality of edge welding pads are electrically connected to the welding ends of the redistribution circuits respectively; wherein, One side surface of the edge welding pads is an inwardly concave arc surface.

4. The wafer-level package assembly with a side-wettable structure according to claim 3, wherein: Each of the edge welding pads has a gap with the substrate.

5. The wafer-level package assembly with a side-wettable structure according to claim 1, wherein: The substrate is a silicon dielectric material.

6. The wafer-level package assembly with a side-wettable structure according to claim 1, wherein: The first protection layer is a polyimide (PI) material.

7. A method for manufacturing a wafer-level package component having a side wettable structure, comprising: A wafer is prepared; wherein, The wafer has a substrate, a plurality of functional areas and a plurality of cutting paths, wherein the cutting paths are respectively formed between the functional areas; wherein a plurality of connection pads are respectively formed on an upper surface of the functional areas; Performing half-cutting on the scribe lines of the wafer, half-cutting the wafer from an upper surface of the wafer to a lower half, so as to form a plurality of half-cut grooves; A first protective layer is formed on the upper surface of the wafer; wherein the first protective layer has a plurality of openings, and the connection pads of the functional areas are respectively exposed from the openings of the first protective layer; A redistribution layer is formed on an upper surface of the first protective layer; wherein the redistribution layer has a plurality of redistribution lines, and the redistribution lines respectively have a connection end and a welding end, the connection ends of the redistribution lines are respectively electrically connected to the connection pads of the functional area, and the welding ends of the redistribution lines respectively extend into the half-cut grooves.

8. The method for manufacturing a wafer-level package component with a side-wettable structure according to claim 7, further comprising: A second protective layer is formed on an upper surface of the redistribution layer at positions corresponding to the functional areas; wherein, The second protection layers respectively cover the connection ends of the redistribution circuit.

9. The method for manufacturing a wafer-level package component with a side-wettable structure according to claim 8, further comprising: An edge welding pad is formed on an upper surface of each of the welding ends of the redistribution circuit; wherein, One side surface of the edge welding pads is an inwardly concave arc surface.

10. The method for manufacturing a wafer-level package component with a side-wettable structure according to claim 9, further comprising: Cutting is performed on the cutting streets of the wafer to completely cut the substrate of the wafer from the upper surface of the wafer downward to form a plurality of independent wafer-level packaging components.