Silicon material surface treatment process

Abstract

The invention provides a silicon material surface treatment process. The silicon material surface treatment process comprises the following steps: obtaining a sintered positive plate, a silicon wafer, silica powder # 1500 and deionized water; the silica powder # 1500 and deionized water are fused, and first silica powder is obtained; filtering the first silica powder by using a plate-and-frame filter press, and circulating the silica powder by using a circulating pump to obtain second silica powder; washing the sintered positive plate with deionized water; placing the silicon wafer into a clamp and then flatly placing, so that the silicon wafer, the sintering positive plate and the second silicon micro-powder are positioned at opposite positions and are kept in contact; rotating the sintering positive plate, and grinding the silicon wafer to obtain a processed silicon wafer; washing the processed silicon wafer by using deionized water; cleaning the processed silicon wafer by using ultrasonic waves; and carrying out surface inspection on the processed silicon wafer. According to the method, the problems of impurity solidification, scratches on the surface of a product, pollution, substandard roughness and the like can be solved, the product quality can be remarkably improved, the cost can be saved on the aspects of processing time and process optimization, and the economic benefit is remarkably improved.

Description

Technical Field

[0001] The invention relates to the technical field of silicon material processing, and in particular to a silicon material surface treatment process. Background Art

[0002] In the semiconductor and electronics industries, silicon materials are core non-metallic materials, and their surface treatment quality directly affects the subsequent processing steps and the performance and reliability of the product. With the advancement of technology and the increase in market demand, the requirements for the surface treatment of silicon materials are becoming increasingly stringent. However, silicon materials are easily affected by scratches, contamination and other problems during processing, resulting in reduced product performance and even waste.

[0003] At present, the production method of silicon material surface treatment mainly adopts the friction method combining sintering tools and cutting fluid. This technology realizes the processing and treatment of the material surface through the physical contact between the tool and the material surface, supplemented by the lubrication and cooling effect of the cutting fluid. However, this technology has exposed obvious defects in practical applications. In the processing environment of high-speed turntable and high-temperature cutting fluid, the processed non-metallic debris is easy to solidify on the surface of products, equipment and tools. These debris may fall off to the surface of the product at any time during the processing, causing scratches and contamination on the product, and even damage to the product in severe cases, increasing the defective rate of the product. In addition, this technology is also prone to leaving marks and tool marks on the surface of the product, making the roughness and aesthetics of the product unable to meet customer requirements.

[0004] Therefore, there is an urgent need for an efficient and reliable silicon material surface treatment technology to solve problems such as solidification of debris, scratches, pollution, and substandard roughness on the product surface, significantly improve product quality, achieve cost savings in processing time and process optimization, and significantly improve economic benefits. Summary of the invention

[0005] In view of the shortcomings of the prior art, the present invention aims to provide a silicon material surface treatment process, which uses silicon micropowder as raw material, sintering tools and grinding and polishing machines to treat the surface of the silicon material to solve problems such as solidification of debris, scratches, pollution, and substandard roughness on the product surface, significantly improve product quality, achieve cost savings in processing time and process optimization, and significantly improve economic benefits.

[0006] The present invention provides a silicon material surface treatment process, comprising the following steps:

[0007] Obtain sintered positive plate, silicon wafer, silicon powder #1500 and deionized water;

[0008] Mixing silicon micropowder #1500 and deionized water to obtain a first silicon micropowder;

[0009] The first silicon micropowder is filtered by a plate and frame filter press, and the silicon micropowder is circulated by a circulation pump to obtain a second silicon micropowder;

[0010] Rinse the sintered positive plate with deionized water;

[0011] Place the silicon wafer in the fixture and lay it flat, so that the silicon wafer, the sintered positive plate and the second silicon powder are in relative positions and keep in contact;

[0012] The sintered positive plate is rotated to grind the silicon wafer to obtain a processed silicon wafer;

[0013] Rinse the processed silicon wafers with deionized water;

[0014] Use ultrasonic cleaning to clean processed silicon wafers;

[0015] Perform surface inspection on processed silicon wafers.

[0016] As a further improvement of the present invention, the first silicon micropowder is obtained by fusing silicon micropowder #1500 and deionized water in a mass ratio of 1:5.

[0017] As a further improvement of the present invention, the gap between the clamp and the silicon wafer does not exceed 2 mm.

[0018] As a further improvement of the present invention, the step of rotating the sintered positive plate to grind the silicon wafer includes rotating the sintered positive plate to grind using a double-sided grinding and polishing machine.

[0019] As a further improvement of the present invention, the surface flatness of the double-sided grinding and polishing machine is not less than 0.01 mm and not more than 0.03.

[0020] As a further improvement of the present invention, the rotation speed of the double-sided grinding and polishing machine is 3 to 3.5 RPM, and the machine processing operation time is 30 minutes.

[0021] As a further improvement of the present invention, the ultrasonic cleaning time is set to 5 minutes.

[0022] As a further improvement of the present invention, the surface roughness of the processed silicon wafer is below 0.2Ra.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] The present invention provides an efficient and reliable silicon material surface treatment process, which can solve the problems of solidification of debris, scratches, pollution, and roughness not meeting the standards on the product surface, so that the roughness reaches below 0.2Ra, which can significantly improve product quality, achieve cost savings in processing time and process optimization, and significantly improve economic benefits. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 The present invention discloses a silicon material surface treatment process flow chart according to an embodiment of the present invention. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the present invention will combine the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments, wherein steps S1, S2... in the embodiments described in the present invention do not limit the only execution steps of the present invention; the basic principles of the present invention defined in the description of the present invention can be applied to other implementation schemes, variant schemes, improved schemes, equivalent schemes and other technical schemes that do not deviate from the spirit and scope of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0027] like Figure 1 As shown, the present invention provides a silicon material surface treatment process, using silicon micropowder as raw material, using a sintering tool and a grinding and polishing machine to treat the surface of the silicon material, including the following steps:

[0028] S1: Obtain sintered positive plate (tool), silicon wafer (product), silicon powder #1500 and deionized water;

[0029] S2: Mixing silicon micropowder #1500 and deionized water to obtain a first silicon micropowder;

[0030] Preferably, the first silicon powder is obtained by fusing silicon powder #1500 and deionized water in a mass ratio of 1:5.

[0031] S3: filtering the first silicon micropowder by a plate and frame filter press, and then circulating the silicon micropowder by a circulating pump to obtain a second silicon micropowder;

[0032] S4: Rinse the sintered positive plate with deionized water;

[0033] S5: Place the silicon wafer in the fixture and lay it flat, so that the silicon wafer, the sintered positive plate and the second silicon powder are in relative positions and keep in contact;

[0034] Preferably, the clamp is not smaller than the size of the silicon wafer, and the gap between the clamp and the silicon wafer does not exceed 2 mm.

[0035] S6: rotating the sintered positive plate to grind the silicon wafer to obtain a processed silicon wafer;

[0036] Preferably, the step of rotating the sintered positive plate to grind the silicon wafer comprises rotating the sintered positive plate to grind using a double-sided grinding and polishing machine.

[0037] Preferably, the surface flatness of the double-sided grinding and polishing machine is not less than 0.01 mm and not more than 0.03 mm.

[0038] Surface flatness refers to the flatness and accuracy of an object's surface on its plane. If the surface flatness of the polishing machine is too high or too low, it will affect the accuracy requirements of the silicon wafer surface.

[0039] Preferably, the rotation speed of the double-sided grinding and polishing machine is 3-3.5 RPM, and the machine processing operation time is 30 minutes. It should be noted that the processing operation time that can be set is different for different grinding and polishing requirements.

[0040] S7: Rinse the processed silicon wafer with deionized water;

[0041] S8: placing the processed silicon wafer in a cleaning tank and using ultrasonic cleaning;

[0042] Preferably, the ultrasonic cleaning time is set to 5 minutes.

[0043] S9: After the processed silicon wafer is dried, a surface inspection is performed.

[0044] Preferably, the surface roughness of the processed silicon wafer is below 0.2Ra.

[0045] In the process described in the present invention, all ratios are by mass and all water is deionized water.

[0046] The following is specifically described by examples:

[0047] Example 1

[0048] S1: Obtain sintered positive plate, silicon wafer, 100 g of silicon powder #1500 and deionized water;

[0049] S2: Mixing silicon micropowder #1500 and deionized water to obtain a first silicon micropowder;

[0050] In this embodiment, the first silicon powder is obtained by fusing silicon powder #1500 and deionized water in a mass ratio of 1:5.

[0051] S3: filtering the first silicon micropowder by a plate and frame filter press, and then circulating the silicon micropowder by a circulating pump to obtain a second silicon micropowder;

[0052] S4: Rinse the sintered positive plate with deionized water and wipe it dry with a scouring pad after rinsing;

[0053] S5: Place the silicon wafer in the fixture and lay it flat, so that the silicon wafer, the sintered positive plate and the second silicon powder are in relative positions and keep in contact;

[0054] In this embodiment, the gap between the clamp and the silicon wafer does not exceed 2 mm.

[0055] S6: rotating the sintered positive plate to grind the silicon wafer to obtain a processed silicon wafer;

[0056] In this embodiment, a double-sided grinding and polishing machine is used to rotate the sintered positive plate to grind the silicon wafer.

[0057] In this embodiment, the surface flatness of the double-sided grinding and polishing machine is 0.01 to 0.03 mm.

[0058] In this embodiment, the rotation speed of the double-sided grinding and polishing machine is 3.5 RPM, and the machine processing operation time is 30 minutes.

[0059] S7: Rinse the processed silicon wafer with deionized water;

[0060] S8: placing the processed silicon wafer in a cleaning tank and using ultrasonic cleaning;

[0061] In this embodiment, the ultrasonic cleaning time is set to 5 minutes.

[0062] S9: After the processed silicon wafer is dried, a surface inspection is performed.

[0063] Comparative Example 1

[0064] In this comparative example, 100 g of silicon powder #600 was used, and the remaining steps were the same as those in Example 1.

[0065] Comparative Example 2

[0066] In this comparative example, 100 g of silicon powder #800 was used, and the remaining steps were the same as those in Example 1.

[0067] Comparative Example 3

[0068] In this comparative example, 100 g of silicon powder #1200 was used, and the remaining steps were the same as those in Example 1.

[0069] The roughness of the silicon wafers processed by the process of Example 1 of the present invention and Comparative Examples 1, 2 and 3 was tested by a roughness measuring instrument. The test results are shown in Table 1.

[0070] Table 1:

[0071]

[0072] As shown in Table 1, by comparing Example 1 of the present invention with Comparative Examples 1-3, the present invention uses silicon micropowder #1500 as a raw material, and the surface of the obtained silicon wafer has no solidified impurities, no scratches, no pollution, and the roughness meets the standard, which is significantly better than the process using silicon micropowder #600, silicon micropowder #800, and silicon micropowder #1200 as raw materials.

[0073] In Example 1 of the present invention, the silicon wafer surface obtained by the silicon material surface treatment process provided by the present invention has no solidified impurities, no scratches, no pollution, and the roughness meets the standard, which is significantly better than the friction process using the traditional sintering tool and cutting fluid combination;

[0074] The present invention provides an efficient and reliable silicon material surface treatment process, which can solve the problems of solidification of debris, scratches, pollution, and roughness not meeting the standards on the product surface, so that the roughness reaches below 0.2Ra, which can significantly improve product quality, achieve cost savings in processing time and process optimization, and significantly improve economic benefits.

Claims

1. A silicon material surface treatment process, characterized in that: The following steps are involved: Obtain sintered positive plate, silicon wafer, silicon powder #1500 and deionized water; Mixing silicon micropowder #1500 and deionized water to obtain a first silicon micropowder; The first silicon micropowder is filtered by a plate and frame filter press, and the silicon micropowder is circulated by a circulation pump to obtain a second silicon micropowder; Rinse the sintered positive plate with deionized water; Place the silicon wafer in the fixture and lay it flat, so that the silicon wafer, the sintered positive plate and the second silicon powder are in relative positions and keep in contact; The sintered positive plate is rotated to grind the silicon wafer to obtain a processed silicon wafer; Rinse the processed silicon wafers with deionized water; Use ultrasonic cleaning to clean processed silicon wafers; Perform surface inspection on processed silicon wafers.

2. The silicon material surface treatment process according to claim 1, characterized in that: The first silicon micropowder is obtained by fusing silicon micropowder #1500 and deionized water in a mass ratio of 1:

5.

3. The silicon material surface treatment process according to claim 1, characterized in that: The gap between the clamp and the silicon wafer does not exceed 2 mm.

4. The silicon material surface treatment process according to claim 1, characterized in that: The method of rotating the sintered positive plate to grind the silicon wafer includes using a double-sided grinding and polishing machine to rotate the sintered positive plate to grind.

5. The silicon material surface treatment process according to claim 4, characterized in that: The surface flatness of the double-sided grinding and polishing machine is not less than 0.01 mm and not more than 0.

03.

6. The silicon material surface treatment process according to claim 4 or 5, characterized in that: The rotation speed of the double-sided grinding and polishing machine is 3-3.5 RPM, and the machine processing operation time is 30 minutes.

7. The silicon material surface treatment process according to claim 1, characterized in that: The ultrasonic cleaning time is set to 5 minutes.

8. The silicon material surface treatment process according to claim 1, characterized in that: The surface roughness of the processed silicon wafer is below 0.2Ra.

Images