Radio frequency amplification device based on bias current

Abstract

The invention discloses a radio frequency amplification device based on bias current. The radio frequency amplification device based on the bias current comprises a bias circuit module and a signal amplification link module, the signal amplification link module comprises a resistor unit and a multi-stage amplifier unit; the bias circuit module comprises a reference current source unit, a first current mirror and conversion unit and a second current mirror and conversion unit; the reference current source unit is electrically connected with the resistor unit and the first current mirror and conversion unit, and the first current mirror and conversion unit and the second current mirror and conversion unit are used for performing current operation according to a reference current signal and outputting a control current signal to the multi-stage amplifier unit; the control current signal is in positive correlation with the resistance change proportion of the resistor unit, and the resistance change proportion of the resistor unit is the same as the resistance change proportion of the resistor in the multi-stage amplifier unit, so that the fluctuation of the quiescent current output by the radio frequency amplification device is reduced, and the performance of the radio frequency amplification device is improved.

Description

Technical Field

[0001] The embodiments of the present invention relate to the technical field of radio frequency circuits, and in particular to a radio frequency amplification device based on bias current. Background Art

[0002] With the continuous development of communication technology, mobile communication terminals have higher and higher performance requirements for RF front-end modules. Among them, the RF power amplifier is an important component of the RF front-end module, and its main technical performance indicators such as bandwidth, gain, loss, linearity, transmission power and efficiency, and service life are particularly important.

[0003] The internal structure of the RF amplifier can be divided into two parts: the signal amplification link circuit and the bias circuit. The bias circuit module will output the bias current, thereby controlling the opening and closing of the amplifier and the quiescent current; in practice, the quiescent current of the RF amplifier has a large fluctuation, which is not only determined by the fluctuation of the bias circuit module, but also depends on the fluctuation of the parameters of the internal components of the amplifier chip; generally speaking, the bias current output by the bias circuit module has good anti-fluctuation performance, and the resistance value is one of the most critical fluctuation influencing factors; currently, the bias circuit module commonly uses complementary metal oxide semiconductor technology, and the typical fluctuation range of the complementary metal oxide semiconductor process resistor is ±20%~30%. The output current signal of the bias circuit module fluctuates greatly, so the quiescent current output by the RF amplifier fluctuates greatly, which in turn affects the performance of the RF amplifier. Summary of the invention

[0004] The present invention provides a radio frequency amplifying device based on bias current, so as to reduce the fluctuation of static current output by the radio frequency amplifying device and improve the performance of the radio frequency amplifying device.

[0005] An embodiment of the present invention provides a radio frequency amplification device based on bias current, and the radio frequency amplification device based on bias current includes: a bias circuit module and a signal amplification link module;

[0006] The signal amplification link module includes a resistor unit and a multi-stage amplifier unit; the bias circuit module includes a reference current source unit, a first current mirror and conversion unit, and a second current mirror and conversion unit; the reference current source unit is electrically connected to the resistor unit and the first current mirror and conversion unit, respectively, and is used to output a reference current signal to the first current mirror and conversion unit according to the resistance change ratio of the resistor unit; the first current mirror and conversion unit is electrically connected to the second current mirror and conversion unit, and the first current mirror and conversion unit and the second current mirror and conversion unit are used to perform current calculations according to the reference current signal and output control current signals to the multi-stage amplifier units; wherein the control current signal is positively correlated with the resistance change ratio of the resistor unit, and the resistance change ratio of the resistor unit is the same as the resistance change ratio of the resistors in the multi-stage amplifier units.

[0007] Optionally, the bias circuit module is located in a first chip, the signal amplification link module is located in a second chip, and the first chip and the second chip are independently configured; or, the bias circuit module and the signal amplification link module are both located in the same chip.

[0008] Optionally, the first current mirror and conversion unit includes a first sub-transistor, an eighth sub-transistor and a ninth sub-transistor; the reference current source unit includes a second sub-transistor, a third sub-transistor, a sixth sub-transistor and a seventh sub-transistor; the second current mirror and conversion unit includes a fourth sub-transistor and a fifth sub-transistor;

[0009] The power supply is electrically connected to the first end of the first sub-transistor, the first end of the second sub-transistor, the first end of the third sub-transistor, the first end of the fourth sub-transistor and the first end of the fifth sub-transistor respectively; the control end of the first sub-transistor is electrically connected to the control end of the second sub-transistor, the second end of the second sub-transistor, the control end of the third sub-transistor and the second end of the sixth sub-transistor respectively; the second end of the third sub-transistor is electrically connected to the control end of the seventh sub-transistor, the second end of the seventh sub-transistor and the control end of the sixth sub-transistor respectively; the second end of the first sub-transistor is electrically connected to the second end of the eighth sub-transistor, the control end of the eighth sub-transistor and the control end of the ninth sub-transistor respectively; the second end of the ninth sub-transistor is electrically connected to the second end of the fourth sub-transistor and the output end of the bias circuit module respectively; the first end of the sixth sub-transistor is electrically connected to the first end of the resistor unit; the first end of the seventh sub-transistor, the second end of the resistor unit, the first end of the eighth sub-transistor, the first end of the ninth sub-transistor, the second end of the fifth sub-transistor, the control end of the fifth sub-transistor and the control end of the fourth sub-transistor are all grounded.

[0010] Optionally, a first end of the resistor unit is electrically connected to the bias circuit module, and a second end of the resistor unit is grounded;

[0011] Alternatively, the first end of the resistor unit is electrically connected to the bias circuit module, and the second end of the resistor unit is electrically connected to a fixed potential;

[0012] Alternatively, the first end of the resistor unit and the second end of the resistor unit are both electrically connected to the bias circuit module.

[0013] Optionally, the resistor unit includes at least one resistor.

[0014] Optionally, each of the amplifier units at each level includes an amplification bias subunit and an amplification subunit;

[0015] The amplifying bias subunit is electrically connected to the bias circuit module and the amplifying subunit respectively, and is used to transmit the received control current signal to the amplifying subunit to determine the DC static operating point output by the amplifying subunit.

[0016] Optionally, the amplification bias subunit includes: a first transistor, a second transistor, a third transistor and a first capacitor;

[0017] The bias circuit module is electrically connected to the control end of the first transistor, the second end of the first transistor, the first end of the first capacitor and the control end of the third transistor respectively; the first end of the first transistor is electrically connected to the second end of the second transistor and the control end of the second transistor; the first end of the second transistor is grounded; the second end of the first capacitor is grounded; the second end of the third transistor is electrically connected to the current source; and the first end of the third transistor is electrically connected to the amplifier unit.

[0018] Optionally, the amplification bias subunit further includes: a first resistor;

[0019] The first end of the first resistor is electrically connected to the bias circuit module; the second end of the first resistor is electrically connected to the control end of the first transistor, the second end of the first transistor, the first end of the first capacitor and the control end of the third transistor respectively.

[0020] Optionally, the amplifying subunit includes: a second capacitor, a second resistor and a fourth transistor;

[0021] The RF signal is input through the first end of the second capacitor; the second end of the second capacitor is electrically connected to the first end of the second resistor and the control end of the fourth transistor; the second end of the second resistor is electrically connected to the first end of the third transistor; the first end of the fourth transistor is grounded, and the second end of the fourth transistor serves as the output end of the amplifier unit.

[0022] According to the technical solution provided by the embodiment of the present invention, the bias circuit module is electrically connected to the resistance unit and the signal amplification link module respectively, so that the resistance unit located on the signal amplification link module can be introduced into the bias circuit module, and the resistance change ratio of the resistance unit is the same as the resistance change ratio of the resistance in the multi-stage amplifier unit, thereby reducing the fluctuation of the control current signal output by the bias circuit module. In addition, the control current signal is positively correlated with the resistance change ratio of the resistance unit, thereby compensating for the static current fluctuation caused by the fluctuation of the resistance in the amplifier unit, thereby reducing the fluctuation of the static current output by the radio frequency amplifier device and improving the performance of the radio frequency amplifier device. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of the electrical principle of a first bias current-based radio frequency amplification device provided in an embodiment of the present invention;

[0024] Figure 2 A schematic diagram of an electrical principle of a bias circuit module provided by an embodiment of the present invention;

[0025] Figure 3 It is a schematic diagram of a curve showing a change ratio of a static current output by a radio frequency amplifier device based on bias current as a function of a resistance change ratio in a bias circuit module in the prior art;

[0026] Figure 4 A schematic diagram of a curve showing a change ratio of a static current output by a bias current-based radio frequency amplifier according to a resistance change ratio of a resistance unit in a bias circuit module provided by an embodiment of the present invention;

[0027] Figure 5 A schematic diagram of a curve showing a change ratio of a static current output by a radio frequency amplification device based on bias current in the prior art as a function of a resistance change ratio in a multi-stage amplifier unit;

[0028] Figure 6 A schematic diagram of a curve showing a change ratio of a static current output by a bias current-based radio frequency amplifier according to an embodiment of the present invention as a function of a resistance change ratio of a resistor unit;

[0029] Figure 7 A schematic diagram of the electrical principle of a second bias current-based radio frequency amplification device provided in an embodiment of the present invention;

[0030] Figure 8 A schematic diagram of the electrical principle of an amplifier subunit provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0032] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0033] Figure 1 The electrical principle diagram of the first bias current-based radio frequency amplification device provided by an embodiment of the present invention is as follows: Figure 2 A schematic diagram of an electrical principle of a bias circuit module provided by an embodiment of the present invention, such as Figure 1 and Figure 2As shown, the RF amplification device based on bias current includes: a bias circuit module 10 and a signal amplification link module 20; the signal amplification link module 20 includes a resistor unit 201 and a multi-stage amplifier unit 202; the bias circuit module 10 includes a reference current source unit 101, a first current mirror and conversion unit 102, and a second current mirror and conversion unit 103; the reference current source unit 101 is electrically connected to the resistor unit 201 and the first current mirror and conversion unit 102, respectively, and is used to output a reference current signal to the first current mirror and conversion unit 102 according to the resistance change ratio of the resistor unit 201, the first current mirror and conversion unit 102 is electrically connected to the second current mirror and conversion unit 103, and the first current mirror and conversion unit 102 and the second current mirror and conversion unit 103 are used to perform current calculation according to the reference current signal and output a control current signal to the multi-stage amplifier unit 202; wherein the control current signal is positively correlated with the resistance change ratio of the resistor unit 201, and the resistance change ratio of the resistor unit 201 is the same as the resistance change ratio of the resistor in the multi-stage amplifier unit 202.

[0034] For details, please refer to Figure 2 The bias circuit module 10 includes a reference current source unit 101, a first current mirror and conversion unit 102, and a second current mirror and conversion unit 103. The power supply Vdd supplies power to the reference current source unit 101, the first current mirror and conversion unit 102, and the second current mirror and conversion unit 103, respectively. The reference current source unit 101 is electrically connected to the resistance unit 201 and the first current mirror and conversion unit 102, respectively, so that the reference current signal output by the reference current source unit 101 is related to the resistance unit 201. The first current mirror and conversion unit 102 and the second current mirror and conversion unit 103 can operate on the current signal and output a control current signal to the multi-stage amplifier unit 202, so that the control current signal finally output by the bias circuit module 10 is related to the resistance value of the resistance unit, and the control current signal is positively correlated with the resistance change ratio of the resistance unit. Specifically, the first current mirror and conversion unit 102 and the second current mirror and conversion unit 103 can operate on the current signal so as to construct a functional relationship between the resistance of the resistance unit and the control current signal, and can compensate for the static current fluctuation caused by the fluctuation of the resistance in the amplifier unit, thereby reducing the fluctuation of the static current output by the RF amplifying device and improving the performance of the RF amplifying device.

[0035] For details, please refer to Figure 1, the signal amplification link circuit 20 and the bias circuit module 10 have different processes, and the bias circuit module 10 and the signal amplification link module 20 can be prepared using two preparation processes respectively. Exemplarily, the bias circuit module 10 can adopt a complementary metal oxide semiconductor process, and the signal amplification link module 20 can adopt a gallium arsenide heterojunction bipolar transistor process. Since the resistance unit 201 is a part of the signal amplification link module 20, the resistance unit 201 is located in the second chip 200, and the bias circuit module 10 needs to cross the second chip 200 to be electrically connected to the resistance unit 201.

[0036] Specifically, the resistance change ratio can be understood as the fluctuation range of the resistance on the ideal resistance value. For example, if the ideal resistance value of a resistor is 100Ω and the fluctuation range is ±5%, the actual resistance value of the resistor may be 95Ω-100Ω, and the fluctuation coefficient of the resistor may be 0.95-1.05.

[0037] Specifically, the quiescent current may be the quiescent current output by the radio frequency amplifying device detected by the ammeter 30 .

[0038] As a comparative example, Figure 3 The following is a schematic diagram of a curve showing the change ratio of the static current output by the RF amplifier device based on bias current as the resistance in the bias circuit module changes in the prior art. Figure 1 and Figure 3 As shown, the bias circuit module 10 in the prior art is provided with a conventional resistor, and the bias circuit module 10 is usually prepared by a complementary metal oxide semiconductor process. Since the fluctuation range of the complementary metal oxide semiconductor process resistor is typically ±20%~30%, the bias current output by the bias circuit module 10 to the multi-stage amplifier unit 202 fluctuates greatly, and the fluctuation range of the quiescent current is 240mA~360mA, that is, the fluctuation amplitude is about 40%.

[0039] Specifically, in the embodiment of the present invention, the resistor unit 201 is introduced into the bias circuit module 10. In other words, the resistor unit 201 is used to replace the conventional resistor provided in the bias circuit module 10. Due to the process of the resistor unit 201, the resistance fluctuation of the resistor unit is smaller than that of the conventional resistor, so that the fluctuation of the output signal of the bias circuit module 10 can be reduced.

[0040] Exemplarily, the resistor used in the resistor unit 201 may be a thin film resistor, and the resistor in the amplifier unit 202 may be a thin film resistor, which can reduce the fluctuation of the static current.

[0041] Figure 4 A schematic diagram of a curve showing a change ratio of a static current output by a bias current-based radio frequency amplifier according to an embodiment of the present invention as a function of a resistance change ratio of a resistor unit in a bias circuit module, such as Figure 1 and Figure 4 As shown, the resistor unit is introduced into the bias circuit module 10. In other words, after the conventional resistor is replaced with the resistor unit on the second chip in the bias circuit module, the fluctuation range of the static current is 287mA~317mA, that is, the fluctuation range is about 10%. Therefore, compared with Figure 3 and Figure 4 It can be found that the embodiment of the present invention uses a resistor unit to replace a conventional resistor, which can reduce the fluctuation of the static current and thus improve the performance of the radio frequency amplification device.

[0042] Specifically, Figure 5 The following is a schematic diagram of a curve showing a change ratio of a static current output by a radio frequency amplifier device based on bias current in the prior art as a function of a change ratio of a resistance in a multi-stage amplifier unit. Figure 1 and Figure 5 As shown, taking the bias current output by the bias circuit module 10 as 1 mA as an example, since the resistance in the multi-stage amplifier unit 202 also fluctuates, the fluctuation of the bias current and the fluctuation of the resistance in the multi-stage amplifier unit 202 are superimposed, so that the static current output by the RF amplifier device fluctuates greatly, and as the resistance change ratio increases, the static current gradually decreases, thereby affecting the performance of the RF amplifier device. Figure 5 As shown, the fluctuation range of the quiescent current is 304mA~319mA, that is, the fluctuation range is about 5%.

[0043] Specifically, the signal amplification link module 20 in the embodiment of the present invention includes a resistor unit 201 and a multi-stage amplifier unit 202, that is, the resistor unit 201 and the multi-stage amplifier unit 202 are prepared by the same process, and the two are integrated on the same chip, so the resistance change ratio of the resistor unit 201 is the same as the resistance change ratio of the resistor in the multi-stage amplifier unit 202. Exemplarily, when the resistance change ratio of the resistor unit 201 is 5%, the resistance change ratio of the resistor 202 in the multi-stage amplifier unit is also 5%, so that the fluctuation of the resistance in the amplifier unit can be compensated according to the resistance change of the resistor unit.

[0044] Optional, continue to refer to Figure 1 When the resistance change ratio of the resistance unit 201 is equal to 1, the static current value output by the RF amplification device based on the bias current satisfies the preset static current range.

[0045] Specifically, Figure 6 A schematic diagram of a curve showing a change in the ratio of the static current output by the bias current-based RF amplifier provided in an embodiment of the present invention as a function of the resistance change ratio is shown in FIG. Figure 6As shown, the resistance change ratio of the resistance unit is the same as the resistance change ratio of the resistance in the multi-stage amplifier unit. For example, the resistance in the resistance unit and the resistance in the multi-stage amplifier unit are both thin film resistors, and the resistance change ratio of the resistance in the resistance unit and the resistance in the multi-stage amplifier unit is the same. Therefore, Figure 6 The resistance change ratio shown in the horizontal axis can be the resistance change ratio of the resistance unit, or the resistance change ratio of the resistance in the multi-stage amplifier unit. Because the greater the resistance change ratio of the resistance unit, the greater the resistance of the resistance unit. By setting the control current signal to be positively correlated with the resistance change ratio of the resistance unit 201, that is, when the resistance change ratio becomes larger, the resistance of the resistance unit becomes larger, and the control current signal also becomes larger, when the resistance change ratio becomes smaller, the resistance of the resistance unit becomes smaller, and the control current signal also becomes smaller, that is, the static current increases with the resistance change ratio of the resistance unit, so that the functional relationship between the resistance of the resistance unit and the control current signal can be constructed. When the resistance change ratio of the resistance unit 201 is equal to 1, the static current value output by the RF amplification device based on the bias current meets the preset static current range, so that the range of the control current signal can be limited, and the control current signal can be avoided in the area outside the preset static current range, thereby compensating for the static current fluctuation caused by the fluctuation of the resistance in the amplifier unit. Figure 6 The fluctuation range of the quiescent current is 345.32mA~345.65mA, that is, the fluctuation amplitude is about 0.1%. It can be seen that by setting the control current signal to follow the resistance change ratio of the resistance unit 201, the fluctuation of the quiescent current can be further reduced and the performance of the RF amplification device can be improved.

[0046] Specifically, the preset quiescent current range can be understood as the quiescent current range output by the RF amplifier device when the resistance is in an ideal state, that is, when the resistance change ratio of the resistance unit 201 is equal to 1, that is, when there is no resistance fluctuation. By setting the resistance change ratio of the resistance unit 201 to be equal to 1, the quiescent current value output by the RF amplifier device satisfies the preset quiescent current range, so that the quiescent current change range after compensation can be smaller, that is, the quiescent current fluctuation after compensation is smaller.

[0047] In the bias current-based RF amplifying device provided by the embodiment of the present invention, the bias circuit module is electrically connected to the resistor unit and the signal amplifying link module, respectively, so that the resistor unit located on the signal amplifying link module can be introduced into the bias circuit module, and the control current signal is positively correlated with the resistance change ratio of the resistor unit, and the resistance change ratio of the resistor unit is the same as the resistance change ratio of the resistor in the multi-stage amplifier unit, thereby reducing the fluctuation of the control current signal output by the bias circuit module. In addition, the control current signal is positively correlated with the resistance change ratio of the resistor unit, thereby compensating for the static current fluctuation caused by the fluctuation of the resistor in the amplifier unit, thereby reducing the fluctuation of the static current output by the RF amplifying device and improving the performance of the RF amplifying device.

[0048] Optional, Figure 7 The electrical principle diagram of the second bias current-based RF amplification device provided by the embodiment of the present invention is as follows: Figure 1 and Figure 7 As shown, the bias circuit module 10 is located in the first chip 100 , the signal amplification link module 20 is located in the second chip 200 , and the first chip 100 and the second chip 200 are independently configured; or, the bias circuit module 10 and the signal amplification link module 20 are both located in the same chip 300 .

[0049] As a feasible implementation method, continue to refer to Figure 1 , the bias circuit module 10 is located in the first chip 100, the signal amplification link module 20 is located in the second chip 200, the first chip 100 and the second chip 200 are independently set, that is, the bias circuit module 10 and the signal amplification link module 20 are not integrated on the same chip, but are independently set, that is, the bias circuit module 10 is located in the first chip 100, and the signal amplification link module 20 is located in the second chip 200. The bias circuit module 10 and the signal amplification link module 20 can be prepared using two preparation processes respectively. Since the thin film resistor unit 201 is part of the signal amplification link module 20, the thin film resistor unit 201 is located in the second chip 200, and the bias circuit module 10 needs to cross the second chip 200 to be electrically connected to the thin film resistor unit 201.

[0050] As another possible implementation, continue to refer to Figure 7 The bias circuit module 10 and the signal amplification link module 20 are both located in the same chip 300, that is, the bias circuit module 10 and the signal amplification link module 20 are integrated on the same chip 300 using the same manufacturing process. In this way, the bias circuit module 10 and the thin film resistor unit 201 can be electrically connected without crossing other chips. The connection method is simple and is conducive to the miniaturization of the radio frequency amplification device.

[0051] Optional, continue to refer to Figure 2 , the first current mirror and conversion unit 102 includes a first sub-transistor Q1, an eighth sub-transistor Q8 and a ninth sub-transistor Q9; the reference current source unit 101 includes a second sub-transistor Q2, a third sub-transistor Q3, a sixth sub-transistor Q6 and a seventh sub-transistor Q7; the second current mirror and conversion unit 103 includes a fourth sub-transistor Q4 and a fifth sub-transistor Q5; the power supply Vdd is electrically connected to the first end of the first sub-transistor Q1, the first end of the second sub-transistor Q2, the first end of the third sub-transistor Q3, the first end of the fourth sub-transistor Q4 and the first end of the fifth sub-transistor Q5 respectively; the control end of the first sub-transistor Q1 is electrically connected to the control end of the second sub-transistor Q2, the second end of the second sub-transistor Q2, the control end of the third sub-transistor Q3 and the second end of the sixth sub-transistor Q6 respectively; the third sub-transistor Q3 is electrically connected to the control end of the fourth sub-transistor Q4 and the second end of the fifth sub-transistor Q5 respectively; the control end of the first sub-transistor Q1 is electrically connected to the control end of the second sub-transistor Q2, the second end of the second sub-transistor Q2, the control end of the third sub-transistor Q3 and the second end of the sixth sub-transistor Q6 respectively; The second end of the transistor Q3 is electrically connected to the control end of the seventh sub-transistor Q7, the second end of the seventh sub-transistor Q7 and the control end of the sixth sub-transistor Q6 respectively; the second end of the first sub-transistor Q1 is electrically connected to the second end of the eighth sub-transistor Q8, the control end of the eighth sub-transistor Q8 and the control end of the ninth sub-transistor Q9 respectively; the second end of the ninth sub-transistor Q9 is electrically connected to the second end of the fourth sub-transistor Q4 and the output end out of the bias circuit module 10 respectively; the first end of the sixth sub-transistor Q6 is electrically connected to the first end of the resistor unit 201; the first end of the seventh sub-transistor Q7, the second end of the resistor unit 201, the first end of the eighth sub-transistor Q8, the first end of the ninth sub-transistor Q9, the second end of the fifth sub-transistor Q5, the control end of the fifth sub-transistor Q5 and the control end of the fourth sub-transistor Q4 are all grounded.

[0052] Specifically, in the circuit formed by the second sub-transistor Q2, the third sub-transistor Q3, the sixth sub-transistor Q6 and the seventh sub-transistor Q7, the first end of the sixth sub-transistor Q6 is electrically connected to the first end of the resistor unit 201, and the second end of the resistor unit 201 is grounded, so that the voltage V Rx The current I outputted from the circuit formed by the second sub-transistor Q2, the third sub-transistor Q3, the sixth sub-transistor Q6 and the seventh sub-transistor Q7 ref They are:

[0053] ;

[0054] ;

[0055] Among them, V Tis the voltage in the circuit formed by the second sub-transistor Q2, the third sub-transistor Q3, the sixth sub-transistor Q6 and the seventh sub-transistor Q7, Rx is the resistance of the resistance unit 201, and β is a physical parameter of the transistor, also known as the current amplification factor or the DC current gain, which is a dimensionless multiple describing the amplification capability of the transistor. 3 is the physical parameter of the third sub-transistor Q3, β 6 is the physical parameter of the sixth sub-transistor Q6, β 2 is the physical parameter of the second sub-transistor Q2, β 7 are the physical parameters of the seventh sub-transistor Q7.

[0056] Specifically, the circuit formed by the first sub-transistor Q1, the eighth sub-transistor Q8, and the ninth sub-transistor Q9 is a current mirror structure, which can convert the current I ref The current of the ninth sub-transistor Q9 is proportionally copied to the ninth sub-transistor Q9, that is, the current of the ninth sub-transistor Q9 is I1=K1*I ref , where K1 is the replication ratio. ,therefore , where A, K1 and V Rx The circuit formed by the fourth sub-transistor Q4 and the fifth sub-transistor Q5 is a current mirror structure, which is used to copy the total current I in the bias circuit module 10 to the fourth sub-transistor Q4 in proportion, that is, the current of the fourth sub-transistor Q4 is I3= K2*I, where K2 is the copy ratio. From this, it can be calculated that the current output by the output terminal out of the bias circuit module 10 is In this way, the control current Iout output by the bias circuit module 10 is positively correlated with the resistance value Rx of the resistance unit, and a current function with Rx as the independent variable in the RF amplifier device can be constructed, thereby compensating for the influence of the process fluctuation of the resistor integrated in the amplifier chip, and further improving the static current fluctuation of the RF amplifier device.

[0057] Optional, continue to refer to Figure 1 , the first end of the resistor unit 201 is electrically connected to the bias circuit module 10, and the second end of the resistor unit 201 is grounded; or, the first end of the resistor unit 201 is electrically connected to the bias circuit module 10, and the second end of the resistor unit 201 is electrically connected to a fixed potential; or, the first end of the resistor unit 201 and the second end of the resistor unit 201 are both electrically connected to the bias circuit module 10.

[0058] As a feasible implementation mode, the first end of the resistor unit 201 is electrically connected to the bias circuit module 10, and the second end of the resistor unit 201 is grounded or the second end is electrically connected to a fixed potential, so that interference and noise in the circuit can be reduced. Regardless of whether the second end is grounded or connected to a fixed potential, a stable reference point can be provided for the resistor unit 201, reducing uncertainty and potential noise sources in the signal path, thereby improving the performance of the RF amplification device.

[0059] As another feasible implementation, since the resistor unit 201 can limit the bias current output by the bias circuit module 10, both ends of the resistor unit 201 are connected to the bias circuit module 10, and the control current signal output by the bias circuit module 10 changes with the change of the resistance value in the resistor unit 201. In this way, a functional relationship between the control current signal and the resistance value in the resistor unit 201 can be established, and then the influence of the process fluctuation of the resistor integrated in the amplifier chip can be compensated, thereby achieving improvement in the static current fluctuation of the RF amplifier device.

[0060] Optional, continue to refer to Figure 1 , the resistance unit 201 includes at least one resistor.

[0061] Specifically, Figure 1 Only a technical solution in which the resistor unit 201 includes only one resistor is shown. It can be understood that the number of resistors connected to the bias circuit module in the resistor unit 201 can be multiple, and the multiple resistors can be connected to the bias circuit module 10 through a single port or dual ports in series. Since the fluctuation of the resistance is small, on the one hand, the fluctuation of the control current signal output by the bias circuit module 10 can be reduced, thereby improving the stability of the static voltage, and on the other hand, the diversified settings of the resistor unit 201 can be realized.

[0062] Optional, continue to refer to Figure 1 Each level of amplifier unit 202 includes an amplifying bias subunit 2021 and an amplifying subunit 2022; the amplifying bias subunit 2021 is electrically connected to the bias circuit module 10 and the amplifying subunit 2022 respectively, and is used to transmit the received control current signal to the amplifying subunit 2022 to determine the DC static operating point output by the amplifying subunit 2022.

[0063] Specifically, the bias circuit module 10 outputs a control current signal to the amplifying bias subunit 2021 , and then the amplifying bias subunit 2021 transmits the control current signal to the amplifying subunit 2022 to determine the DC static operating point output by the amplifying subunit 2022 .

[0064] Optional, continue to refer to Figure 1The amplification bias subunit 2021 includes: a first transistor Q11, a second transistor Q12, a third transistor Q13 and a first capacitor C1; the bias circuit module 10 is electrically connected to the control end of the first transistor Q11, the second end of the first transistor Q11, the first end of the first capacitor C1 and the control end of the third transistor Q13 respectively; the first end of the first transistor Q11 is electrically connected to the second end of the second transistor Q12 and the control end of the second transistor Q12; the second end of the second transistor Q12 is grounded; the second end of the first capacitor C1 is grounded; the second end of the third transistor Q13 is electrically connected to the current source; the first end of the third transistor Q13 is electrically connected to the amplification subunit 2022.

[0065] Specifically, the bias circuit module 10 outputs a control current signal to be transmitted to the first transistor Q11, and the first transistor Q11 and the third transistor Q13 form a current mirror structure, so that the current passing through the first transistor Q11 can be proportionally copied to the third transistor Q13, and then input to the amplifier unit 2022 through the third transistor Q13. The amplifier unit 2022 can be understood as an amplifier, so that the amplifier unit 2022 can amplify the current and output a radio frequency amplified signal.

[0066] Optionally, the amplification bias subunit also includes: a first resistor R1; the first end of the first resistor R1 is electrically connected to the bias circuit module; the second end of the first resistor R1 is electrically connected to the control end of the first transistor Q11, the second end of the first transistor Q11, the first end of the first capacitor C1 and the control end of the third transistor Q13 respectively.

[0067] Specifically, the bias circuit module 10 outputs a control current signal which is transmitted to the first transistor Q11 through the first resistor R1, so that the first resistor R1 can limit the current passing through the first transistor Q11 to prevent the first transistor Q11 from being damaged due to overcurrent, thereby protecting the RF amplifier circuit.

[0068] Optional, Figure 8 The electrical principle diagram of the amplifying subunit provided in the embodiment of the present invention is as follows: Figure 8 As shown, the amplifier subunit 2022 includes: a second capacitor C2, a second resistor R2 and a fourth transistor Q14; the RF signal is input through the first end of the second capacitor C2; the second end of the second capacitor C2 is electrically connected to the first end of the second resistor R2 and the control end of the fourth transistor Q14; the second end of the second resistor R2 is electrically connected to the first end of the third transistor Q13; the first end of the fourth transistor Q14 is grounded, and the second end of the fourth transistor Q14 serves as the output end of the amplifier subunit.

[0069] Specifically, the RF signal is input to the control end of the fourth transistor Q14 through the second capacitor C2, and the current signal output by the amplification bias subunit 2021 is input to the control end of the second resistor R2 through the second resistor R2, so that the RF amplified signal can be output through the second end of the fourth transistor Q14.

[0070] Optionally, the first transistor, the second transistor, the third transistor and the fourth transistor all include bipolar junction transistors or field effect transistors, so that the type of transistor can be selected according to actual applications to meet specific technical requirements in different application scenarios.

[0071] In summary, the bias current-based RF amplifier provided by the embodiment of the present invention can reduce the fluctuation of the output signal of the bias circuit module by introducing the resistor unit located in the signal amplification link module into the bias circuit module, thereby reducing the fluctuation of the static current output by the RF amplifier. In addition, the control current signal output by the bias circuit module is positively correlated with the resistance of the resistor unit, so that a functional relationship between the resistance value of the resistor unit and the output current of the bias circuit module can be constructed. Therefore, according to the resistance fluctuation of the resistor unit, the fluctuation of the resistance in the amplifier unit can be compensated, thereby further reducing the fluctuation of the static current and improving the performance of the RF amplifier.

[0072] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A radio frequency amplification device based on bias current, characterized in that: include: Bias circuit module and signal amplification link module; The signal amplification link module includes a resistance unit and a multi-stage amplifier unit; The bias circuit module includes a reference current source unit, a first current mirror and conversion unit, and a second current mirror and conversion unit; the reference current source unit is electrically connected to the resistance unit and the first current mirror and conversion unit, respectively, and is used to output a reference current signal to the first current mirror and conversion unit according to the resistance change ratio of the resistance unit; the first current mirror and conversion unit is electrically connected to the second current mirror and conversion unit, and the first current mirror and conversion unit and the second current mirror and conversion unit are used to perform current calculations according to the reference current signal and output control current signals to the multiple stages of the amplifier units; wherein the control current signal is positively correlated with the resistance change ratio of the resistance unit, and the resistance change ratio of the resistance unit is the same as the resistance change ratio of the resistors in the multiple stages of the amplifier units.

2. The RF amplification device based on bias current according to claim 1, characterized in that: The bias circuit module is located in a first chip, the signal amplification link module is located in a second chip, and the first chip and the second chip are independently configured; or, the bias circuit module and the signal amplification link module are both located in the same chip.

3. The RF amplification device based on bias current according to claim 1, characterized in that: The first current mirror and conversion unit includes a first sub-transistor, an eighth sub-transistor and a ninth sub-transistor; the reference current source unit includes a second sub-transistor, a third sub-transistor, a sixth sub-transistor and a seventh sub-transistor; the second current mirror and conversion unit includes a fourth sub-transistor and a fifth sub-transistor; The power supply is electrically connected to the first end of the first sub-transistor, the first end of the second sub-transistor, the first end of the third sub-transistor, the first end of the fourth sub-transistor and the first end of the fifth sub-transistor respectively; the control end of the first sub-transistor is electrically connected to the control end of the second sub-transistor, the second end of the second sub-transistor, the control end of the third sub-transistor and the second end of the sixth sub-transistor respectively; the second end of the third sub-transistor is electrically connected to the control end of the seventh sub-transistor, the second end of the seventh sub-transistor and the control end of the sixth sub-transistor respectively; the second end of the first sub-transistor is electrically connected to the second end of the eighth sub-transistor, the control end of the eighth sub-transistor and the control end of the ninth sub-transistor respectively; the second end of the ninth sub-transistor is electrically connected to the second end of the fourth sub-transistor and the output end of the bias circuit module respectively; the first end of the sixth sub-transistor is electrically connected to the first end of the resistor unit; the first end of the seventh sub-transistor, the second end of the resistor unit, the first end of the eighth sub-transistor, the first end of the ninth sub-transistor, the second end of the fifth sub-transistor, the control end of the fifth sub-transistor and the control end of the fourth sub-transistor are all grounded.

4. The RF amplification device based on bias current according to claim 1, characterized in that: The first end of the resistor unit is electrically connected to the bias circuit module, and the second end of the resistor unit is grounded; Alternatively, the first end of the resistor unit is electrically connected to the bias circuit module, and the second end of the resistor unit is electrically connected to a fixed potential; Alternatively, the first end of the resistance unit and the second end of the resistance unit are both electrically connected to the bias circuit module.

5. The RF amplification device based on bias current according to claim 1, characterized in that: The resistor unit includes at least one resistor.

6. The RF amplification device based on bias current according to claim 1, characterized in that: Each level of the amplifier unit includes an amplification bias subunit and an amplification subunit; The amplifying bias subunit is electrically connected to the bias circuit module and the amplifying subunit respectively, and is used to transmit the received control current signal to the amplifying subunit to determine the DC static operating point output by the amplifying subunit.

7. The radio frequency amplification device based on bias current according to claim 6, characterized in that: The amplification bias subunit includes: a first transistor, a second transistor, a third transistor, and a first capacitor; The bias circuit module is electrically connected to the control end of the first transistor, the second end of the first transistor, the first end of the first capacitor and the control end of the third transistor respectively; the first end of the first transistor is electrically connected to the second end of the second transistor and the control end of the second transistor; the first end of the second transistor is grounded; the second end of the first capacitor is grounded; the second end of the third transistor is electrically connected to the current source; and the first end of the third transistor is electrically connected to the amplifier unit.

8. The radio frequency amplification device based on bias current according to claim 7, characterized in that: The amplification bias subunit further includes: a first resistor; The first end of the first resistor is electrically connected to the bias circuit module; the second end of the first resistor is electrically connected to the control end of the first transistor, the second end of the first transistor, the first end of the first capacitor and the control end of the third transistor respectively.

9. The radio frequency amplification device based on bias current according to claim 7, characterized in that: The amplifying subunit includes: a second capacitor, a second resistor and a fourth transistor; The RF signal is input through the first end of the second capacitor; the second end of the second capacitor is electrically connected to the first end of the second resistor and the control end of the fourth transistor; the second end of the second resistor is electrically connected to the first end of the third transistor; the first end of the fourth transistor is grounded, and the second end of the fourth transistor serves as the output end of the amplifier unit.

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