Ultraviolet-visible self-driven photoelectric detector and application thereof

Abstract

The invention discloses an ultraviolet-visible self-driven photoelectric detector and application thereof. The surface of a substrate of the ultraviolet-visible self-driven photoelectric detector is along lt; 111gt, 111gt; monocrystalline silicon growing in crystal orientation; the optical detection layer is a Bi < 1-x > Sb < x > quasi-single crystal thin film deposited on the surface of single crystal silicon; and the electrode is arranged at the edge of the surface of the Bi < 1-x > Sb < x > pseudo-single The ultraviolet-visible self-driven photoelectric detector can convert an optical signal with the wavelength of 365-632 nm into an electric signal under the condition that no voltage is applied. According to the invention, a Bi < 1-x > Sb < x > quasi-single crystal film is deposited on the lt; 111gt, 111gt; a Bi1-xSbx / Si heterostructure is formed on the surface of monocrystalline silicon growing in the crystal orientation, ultraviolet light or visible light signals can be converted into electric signals without additionally applying voltage under the irradiation of light with the wavelength of 365-632 nm, the specific detection rate reaches the 1014 magnitude, and the sensitivity is high; the response time is 16ms, the recovery time is 16ms, and the response efficiency is very high.

Description

Technical Field

[0001] The present invention belongs to the technical field of photoelectric detectors, and in particular relates to an ultraviolet visible self-driven photoelectric detector and applications thereof. Background Art

[0002] In recent years, with the rapid development of photodetectors in various fields such as imaging and environmental monitoring, scientists have continuously increased their requirements for their responsiveness, specific detection, noise performance and stability. Traditional photodetectors require external voltage bias, which not only incurs additional costs, but also limits their application range.

[0003] In the prior art, self-driven photodetectors have the following disadvantages: (1) the device sensitivity is insufficient, which limits its ability to operate in dim light environments; (2) the device structure is complex, the manufacturing process is challenging, and the cost is high. Summary of the invention

[0004] The present invention provides an ultraviolet visible self-driven photoelectric detector and its application, aiming to solve the shortcomings of the self-driven photoelectric detector in the prior art, such as insufficient sensitivity and high manufacturing cost caused by complex device structure.

[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0006] In a first aspect, the present invention provides an ultraviolet-visible self-driven photodetector, the ultraviolet-visible self-driven photodetector comprising:

[0007] Substrate, the substrate surface is along <111> Single crystal silicon grown in a crystalline direction;

[0008] The light detection layer is a Bi layer deposited on the surface of the single crystal silicon. 1-x Sb x Quasi-single-crystalline thin films; and

[0009] The electrode is provided at Bi 1-x Sb x The edge of the quasi-single-crystalline film surface;

[0010] The ultraviolet visible self-driven photoelectric detector can convert a light signal with a wavelength of 365nm to 632nm into an electrical signal without applying a voltage.

[0011] In conjunction with the first aspect of the present invention, in some implementations, x=0.34.

[0012] In conjunction with the first aspect of the present invention, in some embodiments, the Bi 1-x Sb x The thickness of the quasi-single-crystalline film is 30 to 100 nm.

[0013] In combination with the first aspect of the present invention, in some embodiments, the thickness of the 111 phase single crystal silicon substrate is 50 μm to 300 μm.

[0014] In combination with the first aspect of the present invention, in some embodiments, the electrode is made of one or more of Ag, Au, C, Cu, Ti and In.

[0015] In conjunction with the first aspect of the present invention, in some embodiments, the Bi 1-x Sb x The quasi-single-crystalline thin film is formed by dual-target co-sputtering.

[0016] In conjunction with the first aspect of the present invention, in some embodiments, the Bi 1-x Sb x The quasi-single-crystalline film contains dopant atoms.

[0017] In combination with the first aspect of the present invention, in some embodiments, the ultraviolet-visible self-driven photodetector includes one or more of a photodiode, a phototransistor, a photomultiplier tube, and a photoelectric array.

[0018] In a second aspect, the present invention provides the application of the above-mentioned ultraviolet-visible self-driven photoelectric detector in the field of visible light photoelectric detection.

[0019] In conjunction with the second aspect of the present invention, in some embodiments, the application includes applications in communications, imaging, remote sensing, medical treatment, industrial automation, and scientific research.

[0020] Compared with the prior art, the present invention has at least the following beneficial effects:

[0021] 1. The present invention will Bi 1-x Sb x Quasi-single-crystalline thin films are deposited along <111> The surface of the single crystal silicon grown in the crystal direction forms Bi 1- x Sb x / Si heterostructure, under the irradiation of light with a wavelength of 365nm~632nm, without applying additional voltage, it can convert ultraviolet or visible light signals into electrical signals, with a detection rate of 10 14 The response time is 16ms, the recovery time is 16ms, and the efficiency is very high.

[0022] 2. The ultraviolet-visible self-driven photoelectric detector provided by the present invention has a simple structure and low manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0024] Figure 1 : A schematic diagram of a UV-visible self-driven photodetector provided by the present invention;

[0025] Figure 2 : A graph showing the change in current over time (IT) of the UV-visible self-driven photodetector provided in an embodiment of the present application under light with wavelengths of 365 nm and 632 nm without an external voltage;

[0026] Among them: 1. substrate; 2. light detection layer; 3. electrode. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in combination with the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] For simplicity, only some numerical ranges are explicitly disclosed herein. However, any lower limit can be combined with any upper limit to form an unambiguous range; and any lower limit can be combined with other lower limits to form an unambiguous range. Similarly, any upper limit can be combined with any other upper limit to form an unambiguous range. In addition, although not explicitly stated, each point or single value between the range endpoints is included in the range. Thus, each point or single value can be combined with any other point or single value as its own lower limit or upper limit or with other lower limits or upper limits to form an unambiguous range.

[0029] It should be noted that, in the description of this article, unless otherwise specified, "above", "below" include the number, and the meaning of "multiple" in "one or more" is two or more. Relational terms such as "first" and "second" are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or equipment. In the absence of more restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or equipment including the elements.

[0030] In the description of this specification, the description with reference to the terms "any embodiment / method", "one embodiment / method", "some embodiments / methods", "example", "specific example" or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment / method or example are included in at least one embodiment / method or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment / method or example. Moreover, the specific features, structures, materials or characteristics described may be combined in a suitable manner in any one or more embodiments / methods or examples. In addition, those skilled in the art may combine and combine the different embodiments / methods or examples described in this specification and the features of the different embodiments / methods or examples, unless they are contradictory.

[0031] The above summary of the invention of the present invention is not intended to describe each disclosed embodiment or each implementation in the present invention. The following description more specifically illustrates exemplary embodiments. These embodiments can be used in various combinations. In each example, the enumeration is only used as a representative group and should not be interpreted as exhaustive.

[0032] As described in the background art, self-driven photodetectors have the following disadvantages: (1) the device sensitivity is insufficient, which limits its ability to operate in dim light environments; (2) the device structure is complex, the manufacturing process is challenging, and the cost is high.

[0033] The present invention provides a UV-visible self-driven photoelectric detector, which can convert a light signal with a wavelength of 365nm to 632nm into an electrical signal without applying a voltage, and the detection rate reaches 10 14The UV-visible self-driven photodetector has a very simple structure, simple preparation process and low cost.

[0034] like Figure 1 As shown, the ultraviolet visible self-driven photodetector includes:

[0035] Substrate, the substrate surface is along <111> Single crystal silicon grown in a crystalline direction;

[0036] The light detection layer is a Bi layer deposited on the surface of the single crystal silicon. 1-x Sb x Quasi-single-crystalline thin films; and

[0037] The electrode is provided at Bi 1-x Sb x The edge of the quasi-single-crystalline film surface;

[0038] The ultraviolet visible self-driven photoelectric detector can convert a light signal with a wavelength of 365nm to 632nm into an electrical signal without applying a voltage.

[0039] Sb and Bi are elements in adjacent periods of the VA group with similar properties. They can form Bi 100-x Sb x Solid solution, becoming a quantum topological material, Bi 1-x Sb x The quasi-single-crystal thin film forms a heterojunction with single-crystal silicon, which can expand the spectral response range, reduce dark current, increase response efficiency, and achieve regulation of the electrical properties of the material. 1-x Sb x The quasi-single-crystal film is a 3D topological insulator, and a Schottky junction is formed on the interface with single-crystal silicon. The enhanced potential of the Schottky junction significantly improves the mobility of photogenerated carriers. In addition, when x is less than 0.07 or greater than 0.22, Bi 1-x Sb x It behaves as a semi-metal with high electron mobility and low dark current characteristics, which helps to improve the photoelectric conversion efficiency of photodetectors.

[0040] The present invention found that Bi 1-x Sb x Quasi-single-crystal thin film and <111> After the single crystal silicon grown in the crystal direction is combined, it has a self-driving effect, which can convert optical signals with a wavelength of 365nm to 632nm into electrical signals without applying voltage, thereby reducing power consumption.

[0041] The ultraviolet-visible self-driven photoelectric detector provided by the present invention has only three units: a substrate, a light detection layer, and an electrode. It has a simple structure, is easy to manufacture, and has the characteristics of small size and light weight.

[0042] In the embodiment of the present invention, the substrate is a 111 phase single crystal silicon wafer, and the 111 phase single crystal silicon refers to <111> Single crystal silicon grown in a crystal direction. In crystallography, crystal planes and crystal directions are important parameters for describing crystal structures. <111> The crystal direction refers to one of the directions in which the atomic arrangement density in the crystal is higher. Those skilled in the art can also prepare 111 phase single crystal silicon layers on other substrates as needed. The method for preparing 111 phase single crystal silicon layers on other substrates is to grow them on a glass substrate by a metal induced amorphous silicon crystallization (AIC) method. This method can reduce the activation energy of the conversion of amorphous silicon to polycrystalline silicon and achieve the induced polycrystalline silicon film growth at a lower temperature.

[0043] In conjunction with the first aspect of the present invention, in some embodiments, x=0.34, that is, Bi 1-x Sb x Quasi-single-crystalline thin film is Bi 0.66 Sb 0.34 Quasi-single-crystalline thin films.

[0044] In conjunction with the first aspect of the present invention, in some embodiments, the Bi 1-x Sb x The thickness of the quasi-single-crystal film is 30 to 100 nm. Preferably, Bi 1-x Sb x The thickness of the quasi-single-crystal film is 30 to 50 nm; more preferably, Bi 1-x Sb x The thickness of the quasi-single-crystalline film is 35 to 45 nm.

[0045] In combination with the first aspect of the present invention, in some embodiments, the thickness of the 111 phase single crystal silicon substrate is 50 μm to 300 μm.

[0046] In combination with the first aspect of the present invention, in some embodiments, the electrode is made of one or more of Ag, Au, C, Cu, Ti and In.

[0047] In conjunction with the first aspect of the present invention, in some embodiments, the Bi 1-x Sb x The quasi-single-crystalline thin film is formed by co-sputtering of dual targets. In the embodiment of the present invention, the dual targets are Bi target and Sb target respectively.

[0048] In combination with the first aspect of the present invention, in some embodiments, the electrode is formed by electroplating.

[0049] In combination with the first aspect of the present invention, in some embodiments, the ultraviolet-visible self-driven photodetector includes one or more of a photodiode, a phototransistor, a photomultiplier tube, and a photoelectric array.

[0050] In a second aspect, the present invention provides the application of the above-mentioned ultraviolet-visible self-driven photoelectric detector in the field of visible light photoelectric detection.

[0051] In conjunction with the second aspect of the present invention, in some embodiments, the application includes applications in communications, imaging, remote sensing, medical treatment, industrial automation, and scientific research.

[0052] Example

[0053] The technical scheme of the present invention is described in detail by way of examples below. If the manufacturer's brand or preparation method is not specified, the raw materials, equipment or solvents used are all common raw materials, equipment or solvents on the market. Unless otherwise specified, the raw materials of the same name used in the following examples and comparative examples are all the same raw materials.

[0054] Example 1

[0055] like Figure 1 As shown, the UV-visible self-driven photodetector provided in this embodiment is a layered structure, including: a first layer is a substrate, and the substrate is a surface <111> The second layer is a light detection layer, which is Bi deposited on the surface of the single crystal silicon substrate. 0.66 Sb 0.34 Quasi-single-crystal thin film, thickness is about 40nm; the third layer is the electrode, the electrode is located on Bi 0.66 Sb 0.34 The edge of the quasi-single-crystalline film surface.

[0056] The method for preparing the ultraviolet-visible self-driven photodetector provided in this embodiment comprises the following steps:

[0057] 1. Bi was deposited by DC magnetron sputtering 0.66 Sb 0.34 Quasi-single-crystalline thin films are deposited on the surface of single-crystalline silicon substrates: first, the temperature of the magnetron sputtering machine is heated to 200 degrees Celsius, and Bi target and Sb target are sputtered directly on the substrate surface at this temperature. The sputtering power of Bi target and Sb target are both set to 22-26W, and the sputtering is performed for 20 seconds. After the sputtering is completed, it is cooled to room temperature; annealed at 180-200°C for 1 hour in an argon atmosphere, and then cooled to room temperature, wherein: the argon gas flow rate is 16sccm, the argon pressure is 0.5-1Pa, and the central sample disk rotation speed is 20 rpm.

[0058] 2. Use electroplating to form silver electrodes on Bi 0.66 Sb 0.34The edge of the quasi-single crystal film. This process is a conventional process and will not be specifically introduced.

[0059] Device testing:

[0060] The device was tested using a photodetection tester. The current-time (IT) curve of the UV-visible self-driven photodetector provided in the embodiment of the present application under light with wavelengths of 365nm and 632nm without an external voltage was as follows: Figure 2 As shown in the figure, it can be seen that the response time of the UV-visible self-driven photodetector is 16ms, and the recovery time is 16ms. The calculated specific detection rate is 1.81×10 14 Jones.

[0061] The above is only a specific embodiment of the present invention, so that those skilled in the art can understand or implement the present invention. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features applied herein.

Claims

1. A UV-visible self-driven photoelectric detector, characterized in that: include: Substrate, the substrate surface is along <111> Single crystal silicon grown in a crystalline direction; The light detection layer is a Bi layer deposited on the surface of the single crystal silicon. 1-x Sb x Quasi-single-crystalline thin films; as well as The electrode is provided at Bi 1-x Sb x The edge of the quasi-single-crystalline film surface; The ultraviolet visible self-driven photoelectric detector can convert a light signal with a wavelength of 365nm to 632nm into an electrical signal without applying a voltage.

2. The UV-visible self-driven photodetector according to claim 1, characterized in that: x＝0.34。 3. The UV-visible self-driven photodetector according to claim 1, characterized in that: The Bi 1-x Sb x The thickness of the quasi-single-crystalline film is 30 to 100 nm.

4. The UV-visible self-driven photodetector according to claim 1, characterized in that: The thickness of the 111 phase single crystal silicon substrate is 50 μm to 300 μm.

5. The UV-visible self-driven photodetector according to claim 1, characterized in that: The electrode is made of one or more of Ag, Au, C, Cu, Ti and In.

6. The UV-visible self-driven photodetector according to claim 1, characterized in that: The Bi 1-x Sb x The quasi-single-crystalline thin film is formed by dual-target co-sputtering.

7. The UV-visible self-driven photodetector according to claim 1, characterized in that: The Bi 1-x Sb x The quasi-single-crystalline film contains dopant atoms.

8. The UV-visible self-driven photodetector according to claim 1, characterized in that: The ultraviolet-visible self-driven photodetector includes one or more of a photodiode, a phototransistor, a photomultiplier tube, and a photoelectric array.

9. Application of the ultraviolet-visible self-driven photoelectric detector according to any one of claims 1 to 8 in the field of visible light photoelectric detection.

10. The use according to claim 8, characterized in that: The applications include applications in communications, imaging, remote sensing, medical treatment, industrial automation, and scientific research.

Images