Semiconductor device, power conversion unit, and method for manufacturing semiconductor device

Abstract

The semiconductor device includes a first semiconductor element, a second semiconductor element, a support substrate, a sealing resin, and a heat dissipation member disposed on a back surface. The heat dissipation member includes a plurality of first convex members each having a first base portion, a second base portion, a first raised portion, a second raised portion, and a first tip portion. The plurality of first convex members are arranged in a matrix along a plane including a first direction and a second direction.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device, a power conversion unit, and a method for manufacturing the semiconductor device. Background Art

[0002] In the past, semiconductor devices having power switching elements such as MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are known. Such semiconductor devices are mounted on all electronic devices from industrial equipment to home appliances, information terminals, and automotive equipment. Patent document 1 discloses an existing semiconductor device (power module). The semiconductor device described in patent document 1 includes a semiconductor element and a supporting substrate (ceramic substrate). The semiconductor element is, for example, an IGBT made of Si (silicon). The supporting substrate supports the semiconductor element. The supporting substrate includes an insulating substrate and conductor layers stacked on both sides of the substrate. The substrate is made of, for example, ceramic. Each conductor layer is made of, for example, Cu (copper), and a semiconductor element is bonded to one of the conductor layers. The semiconductor element is covered with, for example, a sealing resin.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-190505 Summary of the invention

[0006] Problems to be solved by the invention

[0007] When the power module is operated, the semiconductor element generates heat. In order to properly operate the power module, it is preferable to quickly dissipate the heat from the semiconductor element to the outside.

[0008] One of the problems of the present disclosure is to provide a semiconductor device, a power conversion unit, and a method for manufacturing a semiconductor device that are improved compared to the past. In particular, in view of the above, one of the problems of the present disclosure is to provide a semiconductor device, a power conversion unit, and a method for manufacturing a semiconductor device that can dissipate heat more quickly.

[0009] Solutions to Solve Problems

[0010] The semiconductor device provided by the first scheme of the present disclosure includes: a semiconductor element; a support substrate that supports the semiconductor element; and a sealing resin that covers the semiconductor element and a part of the support substrate. The support substrate has a main surface facing the first side in the thickness direction, and a back surface facing the second side and exposed from the sealing resin. The semiconductor element is mounted on the main surface, and further includes a heat dissipation component arranged on the back surface. The heat dissipation component includes a plurality of first convex members, each of which has a first base, a second base, a first rising portion, a second rising portion, and a first front end portion. The first base and the second base are spaced apart from each other in a first direction orthogonal to the thickness direction, and are respectively bonded to the back surface. The first front end portion is located between the first base and the second base in the first direction, and is located closer to the second side than the first base and the second base in the thickness direction. The first rising portion is connected to the first base and the first front end portion. The second rising portion is connected to the second base and the first front end portion. The plurality of first convex members are arranged in a matrix along a plane including the first direction and a second direction perpendicular to the thickness direction and the first direction.

[0011] The power conversion unit provided by the second aspect of the present disclosure comprises: the semiconductor device provided by the first aspect of the present disclosure; and a cooling device disposed on the second side of the semiconductor device in the thickness direction. The cooling device has a housing that accommodates the heat dissipation component and allows a cooling medium to flow.

[0012] The method for manufacturing a semiconductor device provided by the third aspect of the present disclosure comprises: a step of forming a heat dissipation component using a metal plate material; and a step of arranging the heat dissipation component on the back side of a support substrate. The step of forming the heat dissipation component includes: forming a plurality of cutting lines along a first direction perpendicular to the thickness direction of the metal plate material; and deforming a portion of the metal plate material sandwiched by adjacent cutting lines in a second direction perpendicular to the thickness direction and the first direction into a shape protruding in the thickness direction, thereby forming a plurality of first convex portions.

[0013] Effects of the Invention

[0014] According to the above configuration, heat from the semiconductor element can be dissipated more quickly.

[0015] Other features and advantages of the present disclosure will become more apparent from the following detailed description with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.

[0017] Figure 2 It is a partial perspective view showing a semiconductor device according to the first embodiment of the present disclosure.

[0018] Figure 3 It is a partial perspective view showing a semiconductor device according to the first embodiment of the present disclosure.

[0019] Figure 4 It is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0020] Figure 5 It is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0021] Figure 6 It is a partial side view showing the semiconductor device according to the first embodiment of the present disclosure.

[0022] Figure 7 It is a partially enlarged plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0023] Figure 8 It is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0024] Fig. 9 It is a partial plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0025] Fig.10 It is a side view showing the semiconductor device according to the first embodiment of the present disclosure.

[0026] Fig.11 It is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.

[0027] Fig.12 is along Figure 5 Cross-sectional view along line XII-XII.

[0028] Fig.13 is along Figure 5 Cross-sectional view along line XIII-XIII.

[0029] Fig.14 This is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.

[0030] Fig.15 This is a partially enlarged cross-sectional view showing the semiconductor device according to the first embodiment of the present disclosure.

[0031] Fig.16 is along Figure 5 Cross-sectional view along line XVI-XVI.

[0032] Fig.17 is along Figure 5 Cross-sectional view along line XVII-XVII.

[0033] Fig.18 is along Figure 5 Cross-sectional view of line XVIII-XVIII.

[0034] Fig.19 is along Figure 5 Cross-sectional view of the XIX-XIX line.

[0035] Fig. 20 is along Figure 5 Cross-sectional view of the XX-XX line.

[0036] Fig.21 It is a partial perspective view showing a heat dissipation member of a semiconductor device according to the first embodiment of the present disclosure.

[0037] Fig. 22 It is a partial plan view showing a heat dissipation member of the semiconductor device according to the first embodiment of the present disclosure.

[0038] Fig.23 is along Fig. 22 A partial cross-sectional view of line XXIII-XXIII.

[0039] Fig.24 is along Fig. 22 A partial cross-sectional view of line XXIV-XXIV.

[0040] Fig.25 is along Fig. 22 A partial cross-sectional view of the XXV-XXV line.

[0041] Fig.26 is along Fig. 22 A partial cross-sectional view of the line XXVI-XXVI.

[0042] Fig. 27 (a) is a partial front view of the heat dissipation component of the semiconductor device according to the first embodiment of the present disclosure, (b) is a partial cross-sectional view of the metal plate material, and (c) is a partial top view of the metal plate material.

[0043] Fig.28 (a) is a partial perspective view of the heat dissipation component of the semiconductor device according to the first embodiment of the present disclosure, and (b) to (d) are perspective views showing the bonding plane.

[0044] Fig.29 It is a cross-sectional view showing the power conversion unit according to the first embodiment of the present disclosure.

[0045] Fig.30It is a cross-sectional view showing the power conversion unit according to the first embodiment of the present disclosure.

[0046] Fig.31 It is a partial perspective view showing a heat dissipation member of a semiconductor device according to a second embodiment of the present disclosure.

[0047] Fig.32 It is a partial plan view showing a heat dissipation member of a semiconductor device according to a second embodiment of the present disclosure.

[0048] Fig.33 is along Fig.32 A partial cross-sectional view of line XXXIII-XXXIII.

[0049] Fig.34 is along Fig.32 A partial cross-sectional view of line XXXIV-XXXIV.

[0050] Fig.35 is along Fig.32 A partial cross-sectional view of line XXXV-XXXV.

[0051] Fig.36 is along Fig.32 A partial cross-sectional view of the line XXXVI-XXXVI.

[0052] Fig.37 It is a partial perspective view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure.

[0053] Fig.38 It is a partial plan view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure.

[0054] Fig.39 is along Fig.38 A partial cross-sectional view of line XXXIX-XXXIX.

[0055] Fig.40 is along Fig.38 Partial cross-sectional view of the XL-XL line.

[0056] Fig.41 is along Fig.38 A partial cross-sectional view of the XLI-XLI line.

[0057] Fig.42 is along Fig.38 Partial cross-sectional view of line XLII-XLII.

[0058] Fig.43 It is a partial perspective view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure.

[0059] Fig.44It is a partial plan view showing a heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure.

[0060] Fig.45 is along Fig.44 Partial cross-sectional view of the XLV-XLV line.

[0061] Fig.46 is along Fig.44 Partial cross-sectional view of line XLVI-XLVI.

[0062] Fig.47 is along Fig.44 Partial cross-sectional view of line XLVII-XLVII.

[0063] Fig.48 is along Fig.44 Partial cross-sectional view of line XLVIII-XLVIII. DETAILED DESCRIPTION

[0064] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the drawings.

[0065] The terms "first", "second", "third" and the like in the present disclosure are used only for identification and are not intended to indicate the order of these objects.

[0066] In the present disclosure, “something A is formed on thing B” and “something A is formed on thing B”, unless otherwise specified, include “something A is directly formed on thing B” and “something else is interposed between thing A and thing B and thing A is formed on thing B”. Similarly, “something A is arranged on thing B” and “something A is arranged on thing B”, unless otherwise specified, include “something A is directly arranged on thing B” and “something else is interposed between thing A and thing B and thing A is arranged on thing B”. Similarly, “something A is located on thing B”, unless otherwise specified, includes “something A is in contact with thing B and thing A is located on thing B” and “something else is interposed between thing A and thing B and thing A is located on thing B”. In addition, “something A and something B observed in a certain direction overlap” includes “something A and something B overlap in their entirety” and “something A and something B overlap in part” unless otherwise specified. In addition, in the present disclosure, “some surface A faces (to one side or the other side of) direction B” is not limited to the case where the angle of surface A with respect to direction B is 90°, and includes the case where surface A is inclined with respect to direction B.

[0067] First embodiment:

[0068] Figures 1 to 30The semiconductor device and the power conversion unit of the first embodiment of the present disclosure are shown. The semiconductor device A1 of the present embodiment includes a plurality of first semiconductor elements 10A, a plurality of second semiconductor elements 10B, a heat dissipation component 2, a support substrate 3, a first terminal 41, a second terminal 42, a plurality of third terminals 43, a fourth terminal 44, a plurality of control terminals 45, a control terminal support 48, a first conductive component 5, a second conductive component 6, and a sealing resin 8.

[0069] Figure 1 as well as Figure 2 It is a perspective view showing the semiconductor device A1. Figure 3 It is a partial perspective view showing the semiconductor device A1. Figure 4 It is a top view showing the semiconductor device A1. Figure 5 It is a partial top view showing the semiconductor device A1. Figure 6 It is a partial side view showing the semiconductor device A1. Figure 7 It is a partially enlarged top view showing the semiconductor device A1. Figure 8 , Fig. 9 It is a partial top view showing the semiconductor device A1. Fig.10 It is a side view showing the semiconductor device A1. Fig.11 It is a bottom view showing the semiconductor device A1. Fig.12 is along Figure 5 Cross-sectional view along line XII-XII. Fig.13 is along Figure 5 Cross-sectional view along line XIII-XIII. Fig.14 , Fig.15 It is a partially enlarged cross-sectional view showing the semiconductor device A1. Fig.16 is along Figure 5 Cross-sectional view along line XVI-XVI. Fig.17 is along Figure 5 Cross-sectional view along line XVII-XVII. Fig.18 is along Figure 5 Cross-sectional view of line XVIII-XVIII. Fig.19 is along Figure 5 Cross-sectional view of the XX-XX line. Fig. 20 is along Figure 5 Cross-sectional view of line XXI-XXI. Fig.21 It is a partial perspective view showing the heat dissipation member 2 of the semiconductor device A1. Fig. 22 It is a partial plan view showing the heat dissipation member 2 of the semiconductor device A1. Fig.23 is along Fig. 22 A partial cross-sectional view of line XXIII-XXIII. Fig.24 is along Fig. 22 A partial cross-sectional view of line XXIV-XXIV. Fig.25 is along Fig. 22 A partial cross-sectional view of line XXIV-XXIV. Fig.26 is along Fig. 22 A partial cross-sectional view of the line XXVI-XXVI. Fig. 27 (a) is a partial front view of the heat dissipation component 2 of the semiconductor device A1, (b) is a partial cross-sectional view of the metal plate material, and (c) is a partial top view of the metal plate material. Fig.28 (a) is a partial perspective view of the heat dissipation member 2 of the semiconductor device A1, and (b) to (d) are perspective views showing the bonding plane. Fig.29 as well as Fig.30 It is a cross-sectional view showing the power conversion unit B1.

[0070] In these figures, one side of the first direction x is referred to as the x1 side of the first direction x, and the other side of the first direction x is referred to as the x2 side of the first direction x. In addition, one side of the second direction y is referred to as the y1 side of the second direction y, and the other side of the second direction y is referred to as the y2 side of the second direction y. In addition, one side of the thickness direction z is referred to as the z1 side of the thickness direction z, and the other side of the thickness direction z is referred to as the z2 side of the thickness direction z.

[0071] First semiconductor element 10A, second semiconductor element 10B:

[0072] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B are electronic components that serve as the functional core of the semiconductor device A1. The constituent material of each first semiconductor element 10A and each second semiconductor element 10B is, for example, a semiconductor material based on SiC (silicon carbide). The semiconductor material is not limited to SiC, and may also be Si (silicon), GaN (gallium nitride) or C (diamond), etc. Each first semiconductor element 10A and each second semiconductor element 10B is, for example, a power semiconductor chip with a switching function such as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor). In the present embodiment, the first semiconductor element 10A and the second semiconductor element 10B are shown as MOSFETs, but are not limited to this, and may also be other transistors such as IGBTs (Insulated Gate Bipolar Transistor). Each first semiconductor element 10A and each second semiconductor element 10B are the same element. Each of the first semiconductor elements 10A and each of the second semiconductor elements 10B is, for example, an n-channel MOSFET, but may also be a p-channel MOSFET.

[0073] like Fig.14 , Fig.15As shown, the first semiconductor element 10A and the second semiconductor element 10B each have an element main surface 101 and an element back surface 102. In each of the first semiconductor element 10A and each of the second semiconductor elements 10B, the element main surface 101 and the element back surface 102 are spaced apart in the thickness direction z. The element main surface 101 faces the z1 side of the thickness direction z, and the element back surface 102 faces the z2 side of the thickness direction z.

[0074] In this embodiment, the semiconductor device A1 includes four first semiconductor elements 10A and four second semiconductor elements 10B, but the number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B are not limited to this structure and can be appropriately changed according to the performance required of the semiconductor device A1. Figure 8 , Fig. 9 In the example, four first semiconductor elements 10A and four second semiconductor elements 10B are respectively configured. The number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B may be two or three, or five or more. The number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B may be equal to or different from each other. The number of the first semiconductor elements 10A and the number of the second semiconductor elements 10B is determined according to the current capacity handled by the semiconductor device A1.

[0075] The semiconductor device A1 is configured as a half-bridge switching circuit, for example. In this case, a plurality of first semiconductor elements 10A constitute an upper arm circuit of the semiconductor device A1, and a plurality of second semiconductor elements 10B constitute a lower arm circuit. In the upper arm circuit, the plurality of first semiconductor elements 10A are connected in parallel to each other, and in the lower arm circuit, the plurality of second semiconductor elements 10B are connected in parallel to each other. Each first semiconductor element 10A and each second semiconductor element 10B are connected in series to form a bridge layer.

[0076] like Figure 8 , Fig. 9 as well as Fig.19 As shown in FIG. 1 and FIG. 2 , a plurality of first semiconductor elements 10A are mounted on first conductive portions 32A of a support substrate 3 described later. Figure 8 , Fig. 9 In the example shown, a plurality of first semiconductor elements 10A are arranged, for example, in the second direction y, and are spaced apart from each other. Each first semiconductor element 10A is conductively bonded to the first conductive portion 32A via the first conductive bonding material 19A. When each first semiconductor element 10A is bonded to the first conductive portion 32A, the back surface 102 of the element is opposite to the first conductive portion 32A. In addition, unlike the present embodiment, a plurality of first semiconductor elements 10A may be mounted on a metal component that is different from a part of the DBC substrate, etc. In this case, the metal component is equivalent to the first conductive portion in the present disclosure. The metal component may also be supported on the first conductive portion 32A, for example.

[0077] like Figure 8 , Fig. 9 as well as Fig.18 As shown in FIG. 1 and FIG. 2 , a plurality of second semiconductor elements 10B are mounted on second conductive portions 32B of a support substrate 3 described later. Figure 8 , Fig. 9 In the example shown, a plurality of second semiconductor elements 10B are arranged in the second direction y, for example, and are spaced apart from each other. Each second semiconductor element 10B is conductively bonded to the second conductive portion 32B via the second conductive bonding material 19B. When each second semiconductor element 10B is bonded to the second conductive portion 32B, the element back surface 102 faces the second conductive portion 32B. Fig. 9 As can be understood, when viewed in the first direction x, the plurality of first semiconductor elements 10A overlap with the plurality of second semiconductor elements 10B, but they may not overlap. In addition, unlike the present embodiment, the plurality of second semiconductor elements 10B may be mounted on a metal component different from a part of the DBC substrate or the like. In this case, the metal component is equivalent to the second conductive portion in the present disclosure. The metal component may also be supported on the second conductive portion 32B, for example.

[0078] The plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B respectively have a first main surface electrode 11, a second main surface electrode 12, a third main surface electrode 13 and a back surface electrode 15. The structures of the first main surface electrode 11, the second main surface electrode 12, the third main surface electrode 13 and the back surface electrode 15 described below are common to each of the first semiconductor elements 10A and each of the second semiconductor elements 10B. The first main surface electrode 11, the second main surface electrode 12 and the third main surface electrode 13 are provided on the element main surface 101. The first main surface electrode 11, the second main surface electrode 12 and the third main surface electrode 13 are insulated by an insulating film not shown. The back surface electrode 15 is provided on the element back surface 102.

[0079] The first main surface electrode 11 is, for example, a gate electrode, and a driving signal (for example, a gate voltage) for driving the first semiconductor element 10A (the second semiconductor element 10B) is input. In the first semiconductor element 10A (the second semiconductor element 10B), the second main surface electrode 12 is, for example, a source electrode, and a source current flows. The second main surface electrode 12 of this embodiment has a gate finger 121. The gate finger 121 is, for example, composed of a linear insulator extending in the first direction x, and divides the second main surface electrode 12 into two parts in the second direction y. The third main surface electrode 13 is, for example, a source sensing electrode, and a source current flows. The back electrode 15 is, for example, a drain electrode, and a drain current flows. The back electrode 15 covers substantially the entire area of ​​the back surface 102 of the element. The back electrode 15 is, for example, formed by Ag (silver) plating.

[0080] If a driving signal (gate voltage) is input to the first main surface electrode 11 (gate electrode), each first semiconductor element 10A (each second semiconductor element 10B) switches between the on state and the off state according to the driving signal. In the on state, the current flows from the back electrode 15 (drain electrode) to the second main surface electrode 12 (source electrode), and in the off state, the current does not flow. That is, each first semiconductor element 10A (each second semiconductor element 10B) performs a switching action. The semiconductor device A1 converts the DC voltage input to a fourth terminal 44 and the two first terminals 41 and the second terminal 42 into an AC voltage, for example, through the switching function of the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B, and outputs the AC voltage from the third terminal 43.

[0081] In the semiconductor device A1, as Figure 5 , Figure 8 , Fig. 9 As shown in FIG. 1 and FIG. 2 , the thermistor 17 is provided. The thermistor 17 is used as a temperature detection sensor. In addition to the thermistor 17, for example, a temperature sensing diode or the like may be provided, or a thermistor 17 or the like may not be provided.

[0082] Support substrate 3:

[0083] The support substrate 3 supports a plurality of first semiconductor elements 10A and a plurality of second semiconductor elements 10B. The specific structure of the support substrate 3 is not limited in any way, and is, for example, composed of a DBC (Direct Bonded Copper) substrate or an AMB (Active Metal Brazing) substrate. The support substrate 3 includes an insulating layer 31, a first metal layer 32, and a back metal layer 33. The first metal layer 32 includes a first conductive portion 32A and a second conductive portion 32B. The dimension of the support substrate 3 in the thickness direction z is, for example, greater than 0.4 mm and less than 3.0 mm.

[0084] The insulating layer 31 is, for example, a ceramic having excellent thermal conductivity. Such a ceramic includes, for example, SiN (silicon nitride). The insulating layer 31 is not limited to ceramics, and may also be an insulating resin sheet or the like. The insulating layer 31 is, for example, rectangular in plan view. The dimension of the insulating layer 31 in the thickness direction z is, for example, not less than 0.05 mm and not more than 1.0 mm.

[0085] The first conductive portion 32A supports a plurality of first semiconductor elements 10A, and the second conductive portion 32B supports a plurality of second semiconductor elements 10B. The first conductive portion 32A and the second conductive portion 32B are formed on the upper surface of the insulating layer 31 (the surface facing the z1 side of the thickness direction z). The constituent material of the first conductive portion 32A and the second conductive portion 32B includes, for example, Cu (copper). The constituent material may also include, for example, Al (aluminum) other than Cu (copper). The first conductive portion 32A and the second conductive portion 32B are spaced apart in the first direction x. The first conductive portion 32A is located on the x1 side of the first direction x of the second conductive portion 32B. The first conductive portion 32A and the second conductive portion 32B are each rectangular in shape, for example, when viewed from above. The first conductive portion 32A and the second conductive portion 32B, together with the first conductive component 5 and the second conductive component 6, constitute a path for the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B.

[0086] The first conductive portion 32A has a first main surface 301A. The first main surface 301A is a plane facing the z1 side of the thickness direction z. On the first main surface 301A of the first conductive portion 32A, a plurality of first semiconductor elements 10A are bonded via the first conductive bonding material 19A. The second conductive portion 32B has a second main surface 301B. The second main surface 301B is a plane facing the z1 side of the thickness direction z. On the second main surface 301B of the second conductive portion 32B, a plurality of second semiconductor elements 10B are bonded via the second conductive bonding material 19B. The constituent materials of the first conductive bonding material 19A and the second conductive bonding material 19B are not particularly limited, and may be, for example, solder, a metal paste containing a metal such as Ag (silver), or a sintered metal containing a metal such as Ag (silver). The dimensions of the first conductive portion 32A and the second conductive portion 32B in the thickness direction z are, for example, greater than 0.1 mm and less than 1.5 mm.

[0087] The back metal layer 33 is formed on the lower surface of the insulating layer 31 (the surface facing the z2 side of the thickness direction z). The constituent material of the back metal layer 33 is the same as the constituent material of the first metal layer 32. The back metal layer 33 has a back surface 302. The back surface 302 is a plane facing the z2 side of the thickness direction z. The back surface 302 is exposed from the sealing resin 8. The back metal layer 33 overlaps both the first conductive portion 32A and the second conductive portion 32B when viewed from above.

[0088] Heat dissipation component 2:

[0089] like Figure 2 , Figure 6 , Figure 10 to Figure 13 as well as Figure 16 to Figure 26As shown, the heat dissipation component 2 is disposed on the back side 302 of the back metal layer 33 of the support substrate 3. The heat dissipation component 2 includes a plurality of first convex portions 21. In addition, the heat dissipation component 2 of this embodiment also includes a plurality of second convex portions 22. In addition, for the convenience of description, Figure 21 to Figure 26 A part of the heat dissipation member 2 is shown. The material of the heat dissipation member 2 is not limited at all, and is formed of, for example, a metal plate material. The metal plate material includes, for example, metals such as Cu (copper), Al (aluminum), stainless steel, or alloys thereof.

[0090] The plurality of first convex portions 21 are shaped to protrude toward the z2 side of the thickness direction z. The plurality of first convex portions 21 are arranged in a matrix along a plane including the first direction x and the second direction y. The matrix arrangement in the present disclosure includes a configuration in which each of the first direction x and the second direction y is arranged in a lattice shape, a configuration in a so-called staggered shape, etc., and refers to a configuration with a constant regularity along the plane.

[0091] The plurality of second convex portions 22 are shaped to protrude toward the z2 side of the thickness direction z. The plurality of second convex portions 22 are arranged in a matrix along a plane including the first direction x and the second direction y. The matrix arrangement of the second convex portions 22 is also the same concept as the matrix arrangement of the first convex portions 21.

[0092] The first convex portion 21 has a first base portion 211 , a second base portion 212 , a first rising portion 213 , a second rising portion 214 , and a first front end portion 215 .

[0093] The first base 211 and the second base 212 are spaced apart from each other in the x direction. In the present embodiment, the first base 211 and the second base 212 of the first convex portion 21 adjacent to each other in the first direction x are connected to each other to form an integral part. The shapes of the first base 211 and the second base 212 are not limited in any way. In the present embodiment, they are long rectangles with the second direction y as the length direction when viewed in the thickness direction z.

[0094] The first base 211 and the second base 212 are respectively joined to the back surface 302. There is no limitation on the method of joining the first base 211 and the second base 212, and a welding method such as laser welding, a method using a bonding layer such as an adhesive or solder, an ultrasonic bonding or a solid phase diffusion bonding method, etc. can be appropriately selected. In the present embodiment, the first base 211 and the second base 212 are joined to the back surface 302 by laser welding. As a result, a plurality of welding portions M are formed by each part of the first base 211 and the second base 212 and the back surface 302 (back metal layer 33). In the example shown in the figure, two welding portions M are formed at the portion where a first base 211 and a second base 212 are connected. The two welding portions M are arranged in the second direction y.

[0095] The first front end portion 215 is located between the first base portion 211 and the second base portion 212 in the first direction x. In addition, the first front end portion 215 is located on the z2 side of the first base portion 211 and the second base portion 212 in the thickness direction z. The first front end portion 215 of this embodiment is flat. The shape of the first front end portion 215 is not limited in any way, and when viewed in the thickness direction z, it is a long rectangle with the second direction y as the length direction.

[0096] The first rising portion 213 is connected to the first base portion 211 and the first front end portion 215. More specifically, the first rising portion 213 is connected to the end edge on the x2 side of the first direction x of the first base portion 211 and the end edge on the x1 side of the first direction x of the first front end portion 215. The shape of the first rising portion 213 is not limited in any way, and in the present embodiment, it is a rectangular shape when viewed in the first direction x.

[0097] The second rising portion 214 is connected to the second base portion 212 and the first front end portion 215. More specifically, the second rising portion 214 is connected to the end edge on the x1 side of the first direction x of the second base portion 212 and the end edge on the x2 side of the first direction x of the first front end portion 215. The shape of the second rising portion 214 is not limited in any way, and in the present embodiment, it is a rectangular shape when viewed in the first direction x.

[0098] The size of each part of the first convex portion 21 is not limited in any way. In the present embodiment, the size of the first convex portion 21 in the thickness direction z is larger than the distance between the first rising portion 213 and the second rising portion 214 in the first direction x.

[0099] The second convex portion 22 has a third base portion 221 , a fourth base portion 222 , a third rising portion 223 , a fourth rising portion 224 , and a second front end portion 225 .

[0100] The third base portion 221 and the fourth base portion 222 are spaced apart from each other in the x direction. In the present embodiment, the third base portion 221 and the fourth base portion 222 of the second convex portion 22 adjacent in the first direction x are connected to each other to form an integral part. The shapes of the third base portion 221 and the fourth base portion 222 are not limited in any way. In the present embodiment, they are long rectangles with the second direction y as the length direction when viewed in the thickness direction z.

[0101] The third base 221 and the fourth base 222 are connected to the first front end 215 of the first convex portion 21. More specifically, the third base 221 and the fourth base 222 are located between the first front end 215 of the adjacent first convex portions 21 in the second direction y, and are connected to the first front end 215 thereof. The positions of the third base 221 and the fourth base 222 in the thickness direction z are the same (or substantially the same) as the first front end 215. That is, in the present embodiment, the third base 221 and the fourth base 222 of the plurality of second convex portions 22 are connected to the first front end 215 of the plurality of first convex portions 21 in a manner that forms a strip-shaped portion extending in the second direction y.

[0102] The second front end portion 225 is located between the third base portion 221 and the fourth base portion 222 in the first direction x. In addition, the second front end portion 225 is located on the z2 side of the third base portion 221 and the fourth base portion 222 in the thickness direction z. The second front end portion 225 of this embodiment is flat. The shape of the second front end portion 225 is not limited in any way, and when viewed in the thickness direction z, it is a long rectangle with the second direction y as the length direction. When viewed in the thickness direction z, the second front end portion 225 is located between the first base portion 211 and the second base portion 212 of the first convex portion 21 adjacent to each other in the second direction y.

[0103] The third rising portion 223 is connected to the third base portion 221 and the second front end portion 225. More specifically, the third rising portion 223 is connected to the end edge on the x2 side of the first direction x of the third base portion 221 and the end edge on the x1 side of the first direction x of the second front end portion 225. The shape of the third rising portion 223 is not limited in any way, and in the present embodiment, it is a rectangular shape when viewed in the first direction x.

[0104] The fourth rising portion 224 is connected to the fourth base portion 222 and the second front end portion 225. More specifically, the fourth rising portion 224 is connected to the end edge on the x1 side of the first direction x of the fourth base portion 222 and the end edge on the x2 side of the first direction x of the second front end portion 225. The shape of the fourth rising portion 224 is not limited in any way, and in the present embodiment, it is a rectangular shape when viewed in the first direction x.

[0105] The size of each part of the second convex portion 22 is not limited in any way. In the present embodiment, the size of the second convex portion 22 in the thickness direction z is larger than the distance between the third upright portion 223 and the fourth upright portion 224 in the first direction x. In addition, in the present embodiment, the size of the second convex portion 22 in the thickness direction z is the same (or substantially the same) as the size of the first convex portion 21 in the thickness direction z. However, the size of the first convex portion 21 in the thickness direction z and the size of the second convex portion 22 in the thickness direction z may be different from each other.

[0106] Fig. 27 The process of forming the heat dissipation component 2 in an example of a method for manufacturing a semiconductor device A1 is shown. (a) of the figure shows a portion of the heat dissipation component 2, and (b) and (c) of the figure show a metal plate material 20 used to form the portion of the heat dissipation component 2 shown in (a) of the figure. (c) of the figure is a top view of the metal plate material 20. A plurality of cutting lines 201 are formed in the metal plate material 20. (b) of the figure is a zx cross-sectional view including the cutting lines 201.

[0107] The cutting lines 201 penetrate the metal plate material 20 in the thickness direction z. The cutting lines 201 extend in the first direction x and are linear in the present embodiment. A plurality of cutting lines 201 are arranged in a matrix along the xy plane.

[0108] The area between the cutting lines 201 adjacent to each other in the first direction x of the metal plate material 20 is the area that becomes the first front end portion 215 or the area that becomes the third base portion 221 and the fourth base portion 222. The area between the cutting lines 201 adjacent to each other in the second direction y of the metal plate material 20 is the area that becomes the first base portion 211, the second base portion 212, the first rising portion 213, and the second rising portion 214, or the area that becomes the third rising portion 223, the fourth rising portion 224, and the second front end portion 225.

[0109] The regions of the metal plate material 20 that are to be the first base 211, the second base 212, the first rising portion 213, and the second rising portion 214 are subjected to bending processing so as to protrude toward the z1 side in the thickness direction z, thereby forming a plurality of first convex portions 21. In addition, the regions of the metal plate material 20 that are to be the third rising portion 223, the fourth rising portion 224, and the second front end portion 225 are subjected to bending processing so as to protrude toward the z2 side in the thickness direction z, thereby forming a plurality of second convex portions 22. Through this bending processing, the metal plate material 20 shown in (b) of the figure becomes the heat dissipation component 2 shown in (a) of the figure. As can be understood from (a) and (b) of the figure, when the metal plate material 20 is subjected to bending processing, it is reduced in the first direction x to become the heat dissipation component 2. That is, the size of the heat dissipation component 2 in the first direction x is smaller than the size of the metal plate material 20 in the first direction x before the bending processing is performed.

[0110] After the heat dissipation component 2 is formed, a process of arranging the heat dissipation component 2 on the back surface 302 of the support substrate 3 is performed. In this process, for example, the plurality of first bases 211 and the second bases 212 of the heat dissipation component 2 are joined to the back surface 302 using laser welding. Thus, there is no joining layer or the like between the heat dissipation component 2 and the back surface 302, and the heat dissipation component 2 and the back surface 302 are directly connected.

[0111] First terminal 41, second terminal 42, third terminal 43, fourth terminal 44:

[0112] The first terminal 41, the second terminal 42, the third terminals 43, and the fourth terminal 44 are each formed of a plate-shaped metal plate. The metal plate contains, for example, Cu (copper) or a Cu (copper) alloy. Figure 1 to Figure 5 , Figure 8 , Fig. 9 as well as Fig.11 In the illustrated example, the semiconductor device A1 includes one each of the first terminal 41 , the second terminal 42 , and the fourth terminal 44 , and two third terminals 43 , but the number of each terminal is not limited at all.

[0113] A DC voltage to be the object of power conversion is input to the first terminal 41, the second terminal 42, and the fourth terminal 44. The fourth terminal 44 is a positive electrode (P terminal), and the first terminal 41 and the second terminal 42 are negative electrodes (N terminals). The AC voltage converted by the first semiconductor element 10A and the second semiconductor element 10B is output from the plurality of third terminals 43. The first terminal 41, the second terminal 42, the plurality of third terminals 43, and the fourth terminal 44 each include a portion covered by the sealing resin 8 and a portion exposed from the sealing resin 8.

[0114] like Fig.13 As shown, the fourth terminal 44 is conductively bonded to the first conductive portion 32A. The conductive bonding method is not limited in any way, and ultrasonic bonding, laser bonding, welding, or a method using solder, metal paste, silver sintered body, etc. may be appropriately used. Figure 8 , Fig. 9 As shown in FIG. 1 , the fourth terminal 44 is located on the x1 side of the first direction x relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The fourth terminal 44 is electrically connected to the first conductive portion 32A and to the back surface electrode 15 (drain electrode) of each first semiconductor element 10A via the first conductive portion 32A.

[0115] The first terminal 41 and the second terminal 42 are electrically connected to the second conductive component 6. In the present embodiment, the first terminal 41 and the second conductive component 6 are formed integrally. The first terminal 41 and the second conductive component 6 are formed integrally, for example, by cutting and bending a single metal plate material, and do not include a bonding material for bonding them to each other. In addition, in the present embodiment, the second terminal 42 is formed integrally with the second conductive component 6. In addition, the first terminal 41 and the second terminal 42 only need to be electrically connected to the second conductive component 6, and may be a structure having a bonding portion for bonding them to each other, unlike the present embodiment. Figure 5 , Figure 8As shown in the figures, the first terminal 41 and the second terminal 42 are located on the x1 side of the first direction x relative to the plurality of first semiconductor elements 10A and the first conductive portion 32A. The first terminal 41 and the second terminal 42 are respectively connected to the second conductive component 6, and are connected to the second main surface electrode 12 (source electrode) of each second semiconductor element 10B via the second conductive component 6.

[0116] like Figure 1 to Figure 5 as well as Fig.11 As shown in FIG. 1 and FIG. 2 , in the semiconductor device A1, the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the sealing resin 8 to the x1 side of the first direction x, respectively. The first terminal 41, the second terminal 42, and the fourth terminal 44 are spaced apart from each other. The first terminal 41 and the second terminal 42 are located on opposite sides of each other in the second direction y across the fourth terminal 44. The first terminal 41 is located on the y1 side of the second direction y of the fourth terminal 44, and the second terminal 42 is located on the y2 side of the second direction y of the fourth terminal 44. The first terminal 41, the second terminal 42, and the fourth terminal 44 overlap each other when viewed in the second direction y.

[0117] As from Figure 8 , Fig. 9 as well as Fig.12 As can be understood, the two third terminals 43 are respectively connected to the second conductive portion 32B. The connection method is not limited in any way, and ultrasonic bonding, laser bonding, welding, or a method using solder, metal paste, silver sintered body, etc. can be appropriately used. Figure 8 As shown in the figure, the two third terminals 43 are respectively located on the x2 side of the first direction x relative to the plurality of second semiconductor elements 10B and the second conductive portion 32B. Each third terminal 43 is connected to the second conductive portion 32B, and is connected to the back electrode 15 (drain electrode) of each second semiconductor element 10B via the second conductive portion 32B. In addition, the number of the third terminals 43 is not limited to two, and for example, it can be one or more than three. For example, when there is one third terminal 43, it is preferably connected to the central portion of the second conductive portion 32B in the second direction y.

[0118] The plurality of control terminals 45 are pin-shaped terminals for controlling each first semiconductor element 10A and each second semiconductor element 10B. The plurality of control terminals 45 include a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D. The plurality of first control terminals 46A to 46E are used for controlling each first semiconductor element 10A, etc. The plurality of second control terminals 47A to 47D are used for controlling each second semiconductor element 10B, etc.

[0119] First control terminals 46A-46E:

[0120] The plurality of first control terminals 46A to 46E are arranged at intervals in the second direction y. Figure 8 , Fig.13 as well as Fig. 20 As shown in FIG. 1 and FIG. 2 , each of the first control terminals 46A to 46E is supported by the first conductive portion 32A via a control terminal support body 48 (a first support portion 48A described later). Figure 5 as well as Figure 8 As shown, each of the first control terminals 46A to 46E is located between the plurality of first semiconductor elements 10A and the first terminal 41 , the second terminal 42 , and the fourth terminal 44 in the first direction x.

[0121] The first control terminal 46A is a terminal (gate terminal) for inputting a drive signal to the plurality of first semiconductor elements 10A. A drive signal (eg, a gate voltage is applied) for driving the plurality of first semiconductor elements 10A is input to the first control terminal 46A.

[0122] The first control terminal 46B is a terminal for detecting source signals of the plurality of first semiconductor elements 10A (source sensing terminal), and detects a voltage (voltage corresponding to a source current) applied from the first control terminal 46B to each second main surface electrode 12 (source electrode) of the plurality of first semiconductor elements 10A.

[0123] The first control terminal 46C and the first control terminal 46D are terminals that are electrically connected to the thermistor 17 .

[0124] The first control terminal 46E is a terminal (drain sense terminal) for detecting drain signals of the plurality of first semiconductor elements 10A, and detects a voltage (voltage corresponding to a drain current) applied from the first control terminal 46E to each back electrode 15 (drain electrode) of the plurality of first semiconductor elements 10A.

[0125] The plurality of second control terminals 47A to 47D are arranged at intervals in the second direction y. Figure 8 as well as Fig.13 As shown in FIG. 1 and FIG. 2 , each of the second control terminals 47A to 47D is supported by the second conductive portion 32B via a control terminal support 48 (a second support portion 48B described later). Figure 5 as well as Figure 8 As shown, each of the second control terminals 47A to 47D is located between the plurality of second semiconductor elements 10B and the two third terminals 43 in the first direction x.

[0126] The second control terminal 47A is a terminal (gate terminal) for inputting a drive signal to the plurality of second semiconductor elements 10B. A drive signal (e.g., a gate voltage) for driving the plurality of second semiconductor elements 10B is input to the second control terminal 47A. The second control terminal 47B is a terminal (source sensing terminal) for detecting a source signal of the plurality of second semiconductor elements 10B. The voltage (voltage corresponding to the source current) applied from the second control terminal 47B to each second main surface electrode 12 (source electrode) of the plurality of second semiconductor elements 10B is detected. The second control terminal 47C and the second control terminal 47D are terminals that are connected to the thermistor 17.

[0127] The plurality of control terminals 45 (the plurality of first control terminals 46A to 46E and the plurality of second control terminals 47A to 47D) each include a bracket 451 and a metal pin 452 .

[0128] The support 451 is made of a conductive material. Fig.14 , Fig.15 As shown, the bracket 451 is bonded to the control terminal support 48 (the first metal layer 482 described later) via the conductive bonding material 459. The bracket 451 includes a cylindrical portion, an upper flange portion, and a lower flange portion. The upper flange portion is connected to the upper portion of the cylindrical portion, and the lower flange portion is connected to the lower portion of the cylindrical portion. A metal pin 452 is inserted through at least the upper flange portion and the cylindrical portion of the bracket 451. The bracket 451 is covered with a sealing resin 8 (the second protrusion 852 described later).

[0129] The metal pin 452 is a rod-shaped member extending in the thickness direction z. The metal pin 452 is supported by being pressed into the bracket 451. The metal pin 452 is electrically connected to the control terminal support body 48 (the first metal layer 482 described later) at least via the bracket 451. Fig.14 , Fig.15 As shown in the example shown, when the lower end of the metal pin 452 (the end on the z2 side in the thickness direction z) is in contact with the conductive bonding material 459 in the insertion hole of the bracket 451, the metal pin 452 is connected to the control terminal support body 48 via the conductive bonding material 459.

[0130] Control terminal support 48:

[0131] The control terminal support body 48 supports the plurality of control terminals 45. The control terminal support body 48 is interposed between the first main surface 301A and the second main surface 301B and the plurality of control terminals 45 in the thickness direction z.

[0132] The control terminal support body 48 includes a first support portion 48A and a second support portion 48B. The first support portion 48A is disposed on the first conductive portion 32A and supports a plurality of first control terminals 46A to 46E among the plurality of control terminals 45. Fig.14 As shown, the first support portion 48A is bonded to the first conductive portion 32A via a bonding material 49. The bonding material 49 may be conductive or insulating, such as solder. The second support portion 48B is disposed on the second conductive portion 32B and supports a plurality of second control terminals 47A to 47D among the plurality of control terminals 45. Fig.15 As shown, the second supporting portion 48B is bonded to the second conductive portion 32B via a bonding material 49 .

[0133] The control terminal support body 48 (each of the first support portion 48A and the second support portion 48B) is formed of, for example, a DBC (Direct Bonded Copper) substrate and includes an insulating layer 481 , a first metal layer 482 , and a second metal layer 483 stacked on top of each other.

[0134] The insulating layer 481 is made of, for example, ceramics and has, for example, a rectangular shape in a plan view.

[0135] like Fig.14 , Fig.15 As shown in FIG. 4 , the first metal layer 482 is formed on the upper surface of the insulating layer 481. Each control terminal 45 is vertically arranged on the first metal layer 482. The first metal layer 482 includes, for example, Cu (copper) or a Cu (copper) alloy. Figure 8 As shown in FIG. 1 , the first metal layer 482 includes a first portion 482A, a second portion 482B, a third portion 482C, a fourth portion 482D, a fifth portion 482E, and a sixth portion 482F. The first portion 482A, the second portion 482B, the third portion 482C, the fourth portion 482D, the fifth portion 482E, and the sixth portion 482F are spaced apart and insulated from each other.

[0136] The first portion 482A is connected to a plurality of leads 71, and is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each lead 71. The first portion 482A and the sixth portion 482F are connected to a plurality of leads 73. Thus, the sixth portion 482F is electrically connected to the first main surface electrode 11 (gate electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via the leads 73 and the leads 71. Figure 8 As shown, the first control terminal 46A is joined to the sixth portion 482F of the first support portion 48A, and the second control terminal 47A is joined to the sixth portion 482F of the second support portion 48B.

[0137] The second portion 482B is bonded to a plurality of wires 72 and is electrically connected to the third main surface electrode 13 (source sensing electrode) of each first semiconductor element 10A (each second semiconductor element 10B) via each wire 72. Figure 8 As shown, the first control terminal 46B is joined to the second portion 482B of the first support portion 48A, and the second control terminal 47B is joined to the second portion 482B of the second support portion 48B.

[0138] The third portion 482C and the fourth portion 482D are for thermistor 17 to be joined. Figure 8 As shown, the first control terminals 46C and 46D are joined to the third portion 482C and the fourth portion 482D of the first support portion 48A, and the second control terminals 47C and 47D are joined to the third portion 482C and the fourth portion 482D of the second support portion 48B.

[0139] The fifth portion 482E of the first support portion 48A is joined to the lead wire 74 and is electrically connected to the first conductive portion 32A via the lead wire 74. Figure 8 As shown, the first control terminal 46E is bonded to the fifth portion 482E of the first support portion 48A. The fifth portion 482E of the second support portion 48B is not electrically connected to other structural parts. The above-mentioned leads 71 ​​to 74 are, for example, bonding wires. The constituent material of each lead 71 to 74 includes, for example, Au (gold), Al (aluminum) or Cu (copper).

[0140] like Fig.14 , Fig.15 As shown in FIG. 4 , the second metal layer 483 is formed on the lower surface of the insulating layer 481. Fig.14 As shown, the second metal layer 483 of the first support portion 48A is bonded to the first conductive portion 32A via the bonding material 49. Fig.15 As shown, the second metal layer 483 of the second support portion 48B is bonded to the second conductive portion 32B via the bonding material 49 .

[0141] First conductive component 5, second conductive component 6:

[0142] The first conductive component 5 and the second conductive component 6 together with the first conductive portion 32A and the second conductive portion 32B constitute a path of the main circuit current switched by the plurality of first semiconductor elements 10A and the plurality of second semiconductor elements 10B. The first conductive component 5 and the second conductive component 6 are spaced apart from the first main surface 301A and the second main surface 301B to the z1 side of the thickness direction z, and overlap with the first main surface 301A and the second main surface 301B when viewed from above. In the present embodiment, the first conductive component 5 and the second conductive component 6 are respectively formed of a metal plate. The metal includes, for example, Cu (copper) or a Cu (copper) alloy. Specifically, the first conductive component 5 and the second conductive component 6 are appropriately bent metal plates.

[0143] The first conductive component 5 is connected to the second main surface electrode 12 (source electrode) of each first semiconductor element 10A and the second conductive portion 32B, so that the second main surface electrode 12 of each first semiconductor element 10A and the second conductive portion 32B are conductively connected. The first conductive component 5 constitutes a path for the main circuit current switched by the plurality of first semiconductor elements 10A. Figure 7 as well as Figure 8 As shown, the first conductive component 5 includes a main portion 51 , a plurality of first bonding portions 52 , and a plurality of second bonding portions 53 .

[0144] The main portion 51 is located between the plurality of first semiconductor elements 10A and the second conductive portion 32B in the first direction x, and is a strip-shaped portion extending in the second direction y when viewed from above. The main portion 51 overlaps both the first conductive portion 32A and the second conductive portion 32B when viewed from above, and is spaced from the first main surface 301A and the second main surface 301B toward the z1 side of the thickness direction z in the thickness direction z. Fig.16 As shown in FIG. 1 , the main portion 51 is located on the z2 side in the thickness direction z relative to a third path portion 66 and a fourth path portion 67 of a second conductive member 6 described later, and is closer to the first main surface 301A and the second main surface 301B than the third path portion 66 and the fourth path portion 67 .

[0145] In the present embodiment, the main portion 51 is arranged parallel to the first main surface 301A and the second main surface 301B.

[0146] like Figure 8 As shown in FIG. 1 and FIG. 2 , the main portion 51 extends continuously in the second direction y corresponding to the region where the plurality of first semiconductor elements 10A are arranged. Figure 7 , Figure 8 , Fig.13As shown in the figures, a plurality of first openings 514 are formed in the main part 51. The plurality of first openings 514 are, for example, through holes that penetrate in the thickness direction z (the plate thickness direction of the main part 51). The plurality of first openings 514 are arranged at intervals in the second direction y. The plurality of first openings 514 are respectively provided corresponding to the plurality of first semiconductor elements 10A. In the present embodiment, four first openings 514 are provided in the main part 51, and the positions of these first openings 514 and the plurality of (four) first semiconductor elements 10A in the second direction y are equal to each other.

[0147] In this embodiment, if Figure 8 , Fig.13 As shown in FIG. 1 and FIG. 2 , each first opening 514 overlaps with the gap between the first conductive portion 32A and the second conductive portion 32B in a plan view. The plurality of first openings 514 are formed to facilitate the flow of the resin material between the upper side (z1 side in the thickness direction z) and the lower side (z2 side in the thickness direction z) near the main portion 51 (first conductive member 5) when injecting a fluid resin material to form the sealing resin 8.

[0148] like Figure 8 As shown in FIG. 1 , a plurality of first bonding portions 52 and a plurality of second bonding portions 53 are respectively connected to the main portion 51 and are arranged corresponding to the plurality of first semiconductor elements 10A. Specifically, each first bonding portion 52 is located on the x1 side of the first direction x relative to the main portion 51. Each second bonding portion 53 is located on the x2 side of the first direction x relative to the main portion 51. Fig.14 As shown, each first bonding portion 52 is bonded to the second main surface electrode 12 of any corresponding first semiconductor element 10A via a conductive bonding material 59. Each second bonding portion 53 is bonded to the second conductive portion 32B via a conductive bonding material 59. The constituent material of the conductive bonding material 59 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In the present embodiment, the first bonding portion 52 has two portions separated by a gap in the second direction y. The two portions are bonded to the second main surface electrode 12 on both sides of the second direction y via the gate finger 121 of the second main surface electrode 12 of the first semiconductor element 10A.

[0149] The second conductive component 6 conducts the second main surface electrode 12 (source electrode) of each second semiconductor element 10B to the first terminal 41 and the second terminal 42. The second conductive component 6 is formed integrally with the first terminal 41 and the second terminal 42. The second conductive component 6 constitutes a path for the main circuit current switched by the plurality of second semiconductor elements 10B. Figure 3 , Figure 5 to Figure 7 , Fig.12 , Fig.13 , Figure 16 to Figure 18As shown, the second conductive member 6 includes a plurality of third joint portions 61, a first path portion 64, a second path portion 65, a plurality of third path portions 66, and a fourth path portion 67. In the example shown, the second conductive member 6 includes a first step portion 602 and a second step portion 603.

[0150] The plurality of third bonding portions 61 are portions bonded to the plurality of second semiconductor elements 10B, respectively. Each third bonding portion 61 is bonded to the second main surface electrode 12 of each second semiconductor element 10B via a conductive bonding material 69. The constituent material of the conductive bonding material 69 is not particularly limited, and may be, for example, solder, metal paste, or sintered metal. In the present embodiment, the third bonding portion 61 has two flat portions 611 and two first inclined portions 612.

[0151] The two flat portions 611 are arranged in the second direction y. The two flat portions 611 are spaced apart from each other in the second direction y. The shape of the flat portion 611 is not limited in any way, and in the example shown in the figure, it is a rectangular shape. The two flat portions are bonded to the second main surface electrode 12 on both sides of the second semiconductor element 10B via the gate fingers 121 of the second main surface electrode 12.

[0152] The two first inclined portions 612 are connected to the outer sides of the two flat portions 611 in the second direction y. That is, the first inclined portion 612 located on the y1 side of the second direction y is connected to the y1 side of the second direction y relative to the flat portion 611 located on the y1 side of the second direction y. In addition, the first inclined portion 612 located on the y2 side of the second direction y is connected to the y2 side of the second direction y relative to the flat portion 611 located on the y2 side of the second direction y. The first inclined portion 612 is inclined so that the farther away from the flat portion 611 in the second direction y, the closer it is to the z1 side of the thickness direction z.

[0153] The first path portion 64 is interposed between the plurality of third bonding portions 61 and the first terminal 41. In the illustrated example, the first path portion 64 is connected to the first terminal 41 via the first step portion 602. The first path portion 64 overlaps the first conductive portion 32A in a plan view. The first path portion 64 is shaped to extend in the first direction x as a whole.

[0154] The first path portion 64 includes a first strip portion 641 and a first extension portion 643. The first strip portion 641 is located on the x2 side of the first direction x relative to the first terminal 41 and is substantially parallel to the first main surface 301A. The first strip portion 641 is shaped to extend in the first direction x as a whole. In the example shown in the figure, the first strip portion 641 has a recess 649. The recess 649 is a portion of the first strip portion 641 that is recessed toward the y1 side of the second direction y. Figure 5 In the figure, the first metal portion 35 is presented through the recess 649 .

[0155] The first extension portion 643 extends from the side end of the first strip-shaped portion 641 on the y1 side in the second direction y to the z2 side in the thickness direction z. The first extension portion 643 is spaced apart from the first conductive portion 32A. In the example shown in the figure, the first extension portion 643 is a long rectangular shape along the thickness direction z with the first direction x as the length direction. In addition, the first path portion 64 may also be a structure without the first extension portion 643.

[0156] The second path portion 65 is interposed between the plurality of third bonding portions 61 and the second terminal 42. In the illustrated example, the second path portion 65 is connected to the second terminal 42 via the second step portion 603. The second path portion 65 overlaps the first conductive portion 32A in a plan view. The second path portion 65 is shaped to extend in the first direction x as a whole.

[0157] The second path portion 65 includes a second strip portion 651 and a second extension portion 653. The second strip portion 651 is located on the x2 side of the first direction x relative to the second terminal 42 and is substantially parallel to the first main surface 301A. The second strip portion 651 is shaped to extend in the first direction x as a whole. In the example shown in the figure, the second strip portion 651 has a recess 659. The recess 659 is a portion where a portion of the second strip portion 651 is recessed toward the y2 side of the second direction y. Figure 5 In the figure, the second metal portion 36 is presented through the recess 659 .

[0158] The second extension portion 653 extends from the side end of the second strip-shaped portion 651 on the y2 side in the second direction y to the z2 side in the thickness direction z. The second extension portion 653 is spaced apart from the first conductive portion 32A. In the example shown in the figure, the second extension portion 653 is a long rectangular shape along the thickness direction z with the first direction x as the length direction. In addition, the second path portion 65 may also be a structure without the second extension portion 653.

[0159] The plurality of third path portions 66 are connected to the plurality of third bonding portions 61, respectively. Each third path portion 66 is shaped to extend in the first direction x, and is arranged at intervals in the second direction y. The number of the plurality of third path portions 66 is not limited in any way, and in the example shown in the figure, five third path portions 66 are arranged. Each third path portion 66 is arranged to be located between the plurality of second semiconductor elements 10B in the second direction y, or to be located outside the plurality of second semiconductor elements 10B in the second direction y.

[0160] The two third path portions 66 located on both outer sides in the second direction y are provided with recessed portions 669. The recessed portions 669 are recessed from the inner side to the outer side in the second direction y. In the example shown in the figure, one recessed portion 669 is formed in each of the two third path portions 66. Figure 5In the figure, the second conductive portion 32B is presented through these recesses 669 .

[0161] In the present embodiment, one third joint portion 61 is disposed between two third path portions 66 adjacent in the second direction y. In one third joint portion 61, the first inclined portion 612 located on the y1 side in the second direction y is connected to the third path portion 66 located on the y1 side in the second direction y of the two third path portions 66 adjacent in the second direction y. In one third joint portion 61, the first inclined portion 612 located on the y2 side in the second direction y is connected to the third path portion 66 located on the y2 side in the second direction y of the two third path portions 66 adjacent in the second direction y.

[0162] The fourth path portion 67 is connected to the ends on the x1 side of the first direction x of the plurality of third path portions 66. The fourth path portion 67 is shaped to extend long in the second direction y. The fourth path portion 67 is connected to the ends on the x2 side of the first direction x of the first strip-shaped portion 641 of the first path portion 64 and the second strip-shaped portion 651 of the second path portion 65. In the example shown in the figure, the first path portion 64 is connected to the end on the y1 side of the second direction y of the fourth path portion 67. In addition, the second path portion 65 is connected to the end on the y2 side of the second direction y of the fourth path portion 67.

[0163] Mounting resin 8:

[0164] The sealing resin 8 covers the plurality of first semiconductor elements 10A, the plurality of second semiconductor elements 10B, the support substrate 3 (except the back surface 302), the first terminal 41, the second terminal 42, the plurality of third terminals 43, and each part of the fourth terminal 44, each part of the plurality of control terminals 45, the control terminal support 48, the first conductive component 5, the second conductive component 6, and the plurality of leads 71 ​​to 74. The sealing resin 8 is made of, for example, a black epoxy resin. The sealing resin 8 is formed, for example, by molding. The sealing resin 8 has a dimension of, for example, about 35 mm to 60 mm in the first direction x, a dimension of, for example, about 35 mm to 50 mm in the second direction y, and a dimension of, for example, about 4 mm to 15 mm in the thickness direction z. These dimensions are the sizes of the largest parts along each direction. The sealing resin 8 has a resin main surface 81, a resin back surface 82, and a plurality of resin side surfaces 831 to 834.

[0165] like Fig.10 , Fig.12 as well as Fig.18As shown in FIG. 1 , the resin main surface 81 and the resin back surface 82 are spaced apart in the thickness direction z. The resin main surface 81 faces the z1 side of the thickness direction z, and the resin back surface 82 faces the z2 side of the thickness direction z. A plurality of control terminals 45 (a plurality of first control terminals 46A to 46E and a plurality of second control terminals 47A to 47D) protrude from the resin main surface 81. Fig.11 As shown, the resin back surface 82 is a frame-shaped structure that surrounds the back surface 302 (the lower surface of the back metal layer 33) of the support substrate 3 when viewed from above. The back surface 302 of the support substrate 3 is exposed from the resin back surface 82, for example, in line with the surface of the resin back surface 82. The plurality of resin side surfaces 831 to 834 are respectively connected to both the resin main surface 81 and the resin back surface 82, and are sandwiched by them in the thickness direction z. Figure 4 As shown in FIG. 1 , the resin side surface 831 and the resin side surface 832 are spaced apart in the first direction x. The resin side surface 831 faces the x2 side of the first direction x, and the resin side surface 832 faces the x1 side of the first direction x. The two third terminals 43 protrude from the resin side surface 831, and the first terminal 41, the second terminal 42, and the fourth terminal 44 protrude from the resin side surface 832. Figure 4 As shown in FIG. 8A and FIG. 8B , the resin side surface 833 and the resin side surface 834 are spaced apart in the second direction y. The resin side surface 833 faces the y2 side in the second direction y, and the resin side surface 834 faces the y1 side in the second direction y.

[0166] like Figure 4 As shown, a plurality of recesses 832a are formed on the resin side surface 832. Each recess 832a is a portion that is recessed in the first direction x when viewed from above. The plurality of recesses 832a have a portion formed between the first terminal 41 and the fourth terminal 44, and a portion formed between the second terminal 42 and the fourth terminal 44 when viewed from above. The plurality of recesses 832a are provided to increase the creepage distance between the first terminal 41 and the fourth terminal 44 along the resin side surface 832, and the creepage distance between the second terminal 42 and the fourth terminal 44 along the resin side surface 832.

[0167] like Fig.12 as well as Fig.13 As shown in FIGS. 8A and 8B , the sealing resin 8 has a plurality of first protrusions 851 , a plurality of second protrusions 852 , and a resin void 86 .

[0168] The plurality of first protrusions 851 protrude from the resin main surface 81 in the thickness direction z. The plurality of first protrusions 851 are arranged near the four corners of the sealing resin 8 in a plan view. A first protrusion end face 851a is formed at the front end (the end on the z1 side of the thickness direction z) of each first protrusion 851. Each first protrusion end face 851a of the plurality of first protrusions 851 is substantially parallel to the resin main surface 81 and is located on the same plane (x-y plane). Each first protrusion 851 is, for example, a truncated cone with a bottom and a hollow center. The plurality of first protrusions 851 are used as spacers when the semiconductor device A1 is mounted on a control circuit board or the like in a device using power generated by the semiconductor device A1. The plurality of first protrusions 851 each have a recess 851b and an inner wall surface 851c formed in the recess 851b. The shape of each first protrusion 851 may be columnar, and is preferably cylindrical. The shape of the recessed portion 851b is preferably cylindrical, and the inner wall surface 851c is a single perfect circle in a plan view.

[0169] In addition, the sealing resin 8 has a groove 89. The groove 89 is a portion that is recessed from the resin back surface 82 toward the z1 side in the thickness direction z. The groove 89 crosses the resin back surface 82 in the second direction y. In the example shown in the figure, the sealing resin 8 has two grooves 89. The two grooves 89 are arranged separately in the x direction. The back metal layer 33 (back surface 302) is located between the two grooves 89.

[0170] The semiconductor device A1 is sometimes mechanically fixed to a control circuit board or the like by screwing or the like. In this case, internal thread teeth can be formed on the inner wall surface 851c of the recessed portion 851b in the plurality of first protrusions 851. Nuts may also be embedded in the recessed portion 851b in the plurality of first protrusions 851.

[0171] like Fig.13 As shown in the figure, a plurality of second protrusions 852 protrude from the resin main surface 81 in the thickness direction z. The plurality of second protrusions 852 overlap with the plurality of control terminals 45 when viewed from above. Each metal pin 452 of the plurality of control terminals 45 protrudes from each second protrusion 852. Each second protrusion 852 is truncated cone-shaped. The second protrusion 852 covers a portion of the bracket 451 and the metal pin 452 in each control terminal 45.

[0172] like Fig.29 as well as Fig.30 As shown, the power conversion unit B1 includes a semiconductor device A1 and a cooling device 9 .

[0173] The cooling device 9 is disposed on the z2 side in the thickness direction z of the semiconductor device A1 . The cooling device 9 includes a housing 91 .

[0174] The housing 91 is a box-shaped member made of metal or resin. The housing 91 accommodates the heat dissipation member 2. In the present embodiment, the housing 91 is mounted on the semiconductor device A1 via a sealing material 919. The sealing material 919 is sandwiched between the end of the housing 91 and the resin back surface 82 of the sealing resin 8, and keeps the internal space of the housing 91 airtight.

[0175] The box body 91 is filled with the cooling medium Cm. The cooling medium Cm flows in the box body 91. In the present embodiment, the cooling device 9 has a supply portion 92 and a discharge portion 93. The supply portion 92 and the discharge portion 93 are separately installed on both sides of the first direction x of the box body 91. The cooling medium Cm is supplied to the box body 91 from the supply portion 92. The cooling medium Cm flowing in the box body 91 is discharged from the discharge portion 93. Thus, in the box body 91, the cooling medium Cm flows along the second direction y. In addition, the cooling medium Cm flowing along the second direction y does not mean that there is only a flow velocity component in the second direction y, but also includes flow velocity components in the first direction x and the thickness direction z, and includes a form in which the cooling medium Cm moves as a whole in the second direction y.

[0176] Next, the operation of this embodiment will be described.

[0177] The heat dissipation component 2 includes a plurality of first convex portions 21. The first convex portion 21 is a shape that protrudes from the back surface 302 to the z2 side in the thickness direction z. These plurality of first convex portions 21 are arranged in a matrix along a plane including the first direction x and the second direction y. Thus, for example, in cooling using the cooling medium Cm, the heat transferred from the first semiconductor element 10A and the second semiconductor element 10B to the heat dissipation component 2 via the support substrate 3 can be efficiently conducted to the cooling medium Cm. Therefore, the heat from the first semiconductor element 10A and the second semiconductor element 10B can be dissipated more quickly.

[0178] As reference Fig. 27 As described, the heat dissipation component 2 is a structure whose size in the first direction x is smaller than that of the metal plate material 20. For example, unlike the present embodiment, a heat dissipation component having a plurality of raised pieces is obtained by forming a plurality of V-shaped cutting lines on the metal plate material, respectively, and making the parts surrounded by these cutting lines stand up. The size and shape of the heat dissipation component observed in the thickness direction are the same (or approximately the same) as those of the metal plate material, without any reduction. Compared with such a heat dissipation component having a plurality of simple raised pieces, the heat dissipation component 2 of the present embodiment has a more complex shape in three dimensions. As a result, the contact area when the cooling medium Cm flows can be significantly enlarged, which is suitable for improving the heat dissipation efficiency.

[0179] Since the plurality of first convex portions 21 have the first rising portion 213, the second rising portion 214, and the first front end portion 215, the first convex portion 21 has a structure having a hollow portion when viewed in the second direction y. Thus, the heat dissipation component 2 in which the plurality of first convex portions 21 are arranged in a matrix form has a structure that allows the cooling medium Cm to flow easily in the second direction y. Therefore, in the power conversion unit B1, the cooling medium Cm can flow smoothly in the second direction y.

[0180] The heat dissipation component 2 of this embodiment includes a plurality of second convex portions 22 in addition to the plurality of first convex portions 21. The plurality of second convex portions 22 are shaped to further protrude from the first front end portions 215 of the plurality of first convex portions 21 in the thickness direction z. Thus, the size of the heat dissipation component 2 in the thickness direction z can be further increased, and the contact area with the cooling medium Cm can be further enlarged. Therefore, it is suitable for improving the heat dissipation efficiency.

[0181] Fig.28 (a) indicates the bonding plane P2 of the heat dissipation component 2. The bonding plane P2 is a plane along the portion opposite to the back surface 302 when the heat dissipation component 2 is bonded to the back surface 302 of the support substrate 3. In the present embodiment, the bonding plane P2 is a plane along the first base 211 and the second base 212 of the plurality of first convex portions 21.

[0182] In the present embodiment, the heat dissipation component 2 has a plurality of first convex portions 21 arranged in a matrix, and is a shape that is smaller in size in the first direction x than the metal plate material 20. Therefore, for example, compared with the metal plate material 20, the heat dissipation component 2 has a structure that is easy to bend and twist in three dimensions. For example, (b) of the figure is a bending deformation in which the central part of the first direction x of the bonding plane P2 rises in the thickness direction z, and (c) of the figure is a bending deformation in which the central part of the second direction y of the bonding plane P2 rises in the thickness direction z. In addition, (d) of the figure is a twisting deformation in which the two ends of the first direction x of the bonding plane P2 rotate in different directions. In these bending deformations and twisting deformations shown in (b) to (d), the heat dissipation component 2 has sufficient softness or flexibility to follow.

[0183] Assume that even if the back surface 302 of the support substrate 3 is deformed due to manufacturing errors in the manufacturing process, thermal deformation during use, etc. Fig.28 The heat dissipation component 2 can be properly fixed to the back surface 302 of the heat dissipation component 2 by making the heat dissipation component 2 follow the deformation. In particular, by joining the first base 211 and the second base 212 of the plurality of first convex portions 21 to the back surface 302 by laser welding, the heat dissipation component 2 can be properly fixed to the back surface 302 even if deformations corresponding to (b) to (d) of FIG. Fig.28Even with the deformations shown in (b) to (d) of FIG. 3 , it is possible to suppress the generation of an undesired gap between the heat dissipating member 2 and the back surface 302 .

[0184] Figures 31 to 48 1 and 2 represent other embodiments of the present disclosure. In addition, in these figures, the same or similar elements as those in the above-mentioned embodiments are marked with the same symbols as those in the above-mentioned embodiments. In addition, the structures of the various parts in each embodiment can be appropriately combined with each other within the range that does not cause technical contradictions.

[0185] Second implementation method:

[0186] Figure 31 to Figure 36 The heat dissipation member of the semiconductor device according to the second embodiment of the present disclosure is shown. The heat dissipation member 2 of the present embodiment includes a plurality of first convex portions 21 , but does not include a plurality of second convex portions 22 .

[0187] In this embodiment, a plurality of first convex portions 21 are arranged along the first direction x and the second direction y. The first bases 211 and the second bases 212 of the first convex portions 21 adjacent to each other in the first direction x are connected to each other to form an integral part. In addition, the first bases 211 and the second bases 212 of the first convex portions 21 adjacent to each other in the second direction y are connected to each other. Thus, the first bases 211 and the second bases 212 of the plurality of first convex portions 21 arranged in the second direction y are in a band shape along the second direction y as a whole when viewed in the thickness direction z.

[0188] The first rising portion 213, the second rising portion 214, and the first front end portion 215 of the first convex portions 21 adjacent to each other in the second direction y are not connected to each other. In the present embodiment, a plurality of slits 23 are formed in the heat dissipation member 2. When viewed in the thickness direction z, the slits 23 are elongated shapes extending in the first direction x, and are located between the first convex portions 21 adjacent to each other in the second direction y.

[0189] In the present embodiment, the first convex portions 21 adjacent to each other in the second direction y are arranged offset from each other in the second direction y. That is, the plurality of first convex portions 21 arranged in the second direction y are arranged in a zigzag pattern when viewed in the thickness direction z.

[0190] According to the present embodiment, the heat from the first semiconductor element 10A and the second semiconductor element 10B can also be dissipated more quickly. In addition, in the present embodiment, the plurality of first convex portions 21 arranged in the second direction y are arranged in a zigzag shape when viewed in the thickness direction z. Thus, in the power conversion unit using the heat dissipation component 2 of the present embodiment, the above-mentioned meandering flow of the cooling medium Cm is realized. Thus, the flow path of the cooling medium Cm can be extended, and the heat dissipation efficiency can be improved.

[0191] As is apparent from the present embodiment, the heat dissipation member 2 of the present disclosure is not limited to a structure having both a plurality of first convex portions 21 and a plurality of second convex portions 22 , and may be a structure having a plurality of first convex portions 21 but not a plurality of second convex portions 22 .

[0192] Third embodiment:

[0193] Figures 37 to 42 A heat dissipation member of a semiconductor device according to a third embodiment of the present disclosure is shown. The heat dissipation member 2 of this embodiment includes a plurality of first convex portions 21 .

[0194] In this embodiment, the distance between the first rising portion 213 and the second rising portion 214 of the first convex portion 21 is smaller than that in the above-mentioned embodiment. For example, the distance between the first rising portion 213 and the second rising portion 214 is smaller than the thickness of each of the first rising portion 213 and the second rising portion 214, and is significantly smaller than the distance between adjacent first convex portions 21 in the first direction x.

[0195] The first tip portion 215 of the present embodiment is in a folded shape. That is, the first rising portion 213 and the second rising portion 214 are significantly closer to each other, so that the dimension of the first tip portion 215 in the first direction x is significantly smaller than that of the above-mentioned embodiment.

[0196] In the present embodiment, the slits 23 are also formed between the first convex portions 21 adjacent to each other in the second direction y.

[0197] According to the present embodiment, the heat from the first semiconductor element 10A and the second semiconductor element 10B can also be dissipated more quickly. In addition, as understood from the present embodiment, the first convex portion 21 is not limited to a structure in which the first rising portion 213, the second rising portion 214 and the first front end portion 215 are in a U-shape when viewed in the second direction y, and the first rising portion 213 and the second rising portion 214 may also be a very close flat shape. In such a structure, the heat dissipation efficiency can also be improved by the cooling medium Cm flowing in the space between the adjacent first convex portions 21. In addition, there is no limitation on the shape of the first front end portion 215, and in addition to a flat plate shape and a folded shape, it can also be a curved surface bulging toward the z2 side of the thickness direction z.

[0198] Fourth embodiment:

[0199] Figures 43 to 48 A heat dissipation member of a semiconductor device according to a fourth embodiment of the present disclosure is shown. The heat dissipation member 2 of this embodiment includes a plurality of first convex portions 21 .

[0200] In the present embodiment, the first tip portion 215 of the first convex portion 21 has a curved shape when viewed in the thickness direction z. In addition, the first rising portion 213 and the second rising portion 214 have a curved surface shape.

[0201] More specifically, the first front end portion 215 of a first convex portion 21 is curved so that the central portion in the second direction y is located closer to the x1 side of the first direction x than the two end portions in the second direction y. In the first convex portion 21, the first rising portion 213 and the second rising portion 214 are curved surfaces curved so that the central portion in the second direction y is located closer to the x1 side of the first direction x than the two end portions in the second direction y when viewed in the thickness direction z.

[0202] In addition, the first front end portion 215 of the other first convex portion 21 is curved so that the central portion in the second direction y is located closer to the x2 side of the first direction x than the two end portions in the second direction y. In the first convex portion 21, the first rising portion 213 and the second rising portion 214 are curved surfaces curved so that the central portion in the second direction y is located closer to the x2 side of the first direction x than the two end portions in the second direction y when viewed in the thickness direction z.

[0203] In this embodiment, the two types of first convex portions 21 are alternately arranged in the second direction y. Thus, the first front end portions 215 of the plurality of first convex portions 21 arranged in the second direction y are in the shape of a band zigzagging in the second direction y when viewed in the thickness direction z. In addition, the plurality of first convex portions 21 arranged in the first direction x are bent to the same side.

[0204] In the present embodiment, the slits 23 are also formed between the first convex portions 21 adjacent to each other in the second direction y.

[0205] According to this embodiment, the heat from the first semiconductor element 10A and the second semiconductor element 10B can also be dissipated more quickly. In addition, according to this embodiment, the plurality of first convex portions 21 arranged in the second direction y constitute a flow path that zigzags in the second direction y. Thus, the flow path of the cooling medium Cm can be extended, and the heat dissipation efficiency can be improved. In addition, the space between the plurality of first convex portions 21 in the first direction x constitutes a flow path that zigzags in the second direction y. Thus, the heat dissipation efficiency can also be improved.

[0206] In addition, as understood from the present embodiment, the first front end portion 215 is not limited to a rectangular shape having sides parallel to the second direction y, but may be a curved shape having curved sides. In addition, the first rising portion 213 and the second rising portion 214 are not limited to a flat plate structure, but may be a curved surface.

[0207] The semiconductor device, power conversion unit, and method for manufacturing a semiconductor device disclosed in the present invention are not limited to the above-mentioned embodiments. The specific structures of the semiconductor device, power conversion unit, and method for manufacturing a semiconductor device disclosed in the present invention can be freely modified in various designs. The present invention includes the embodiments described in the following supplementary notes.

[0208] Note 1.

[0209] A semiconductor device comprising:

[0210] Semiconductor components;

[0211] a supporting substrate that supports the semiconductor element; and

[0212] a sealing resin covering the semiconductor element and a portion of the supporting substrate,

[0213] The support substrate has a main surface facing a first side in a thickness direction and a back surface facing a second side and exposed from the sealing resin.

[0214] The semiconductor element is mounted on the main surface.

[0215] It also includes a heat dissipation component disposed on the back side.

[0216] The heat dissipation component includes a plurality of first convex members, each of which has a first base, a second base, a first rising portion, a second rising portion, and a first front end portion.

[0217] The first base and the second base are spaced apart from each other in a first direction perpendicular to the thickness direction and are respectively joined to the back surface.

[0218] The first front end portion is located between the first base portion and the second base portion in the first direction and is located closer to the second side than the first base portion and the second base portion in the thickness direction.

[0219] The first rising portion is connected to the first base portion and the first front end portion.

[0220] The second rising portion is connected to the second base portion and the first front end portion.

[0221] The plurality of first convex members are arranged in a matrix along a plane including the first direction and a second direction perpendicular to the thickness direction and the first direction.

[0222] Note 2.

[0223] According to the semiconductor device described in Supplementary Note 1,

[0224] The first rising portions of two of the first convex members adjacent to each other in the second direction are spaced apart from each other.

[0225] Note 3.

[0226] According to the semiconductor device described in Appendix 2,

[0227] The second rising portions of two of the first convex members adjacent to each other in the second direction are spaced apart from each other.

[0228] Note 4.

[0229] According to the semiconductor device described in Appendix 3,

[0230] The first base portion of one of the two first convex members adjacent to each other in the first direction is connected to the second base portion of the other one.

[0231] Note 5.

[0232] According to the semiconductor device described in Appendix 4,

[0233] The first bases of two adjacent first convex members in the second direction are spaced apart from each other.

[0234] The second base portions of two of the first convex members adjacent to each other in the second direction are spaced apart from each other.

[0235] Note 6.

[0236] According to the semiconductor device described in Supplementary Note 5,

[0237] The heat dissipation component further includes a plurality of second convex members, each of which has a third base, a fourth base, a third rising portion, a fourth rising portion, and a second front end portion.

[0238] The third base portion is connected to the first front end portions of two first convex members adjacent to each other in the second direction.

[0239] The fourth base portion is connected to the first front end portions of the other two first convex members adjacent to each other in the second direction.

[0240] The second front end portion is located between the third base portion and the fourth base portion in the first direction and is located closer to the second side than the third base portion and the fourth base portion in the thickness direction.

[0241] The third rising portion is connected to the third base portion and the second front end portion.

[0242] The third rising portion is connected to the fourth base portion and the second front end portion.

[0243] Note 7.

[0244] According to the semiconductor device described in Appendix 6,

[0245] The size of the second convex member in the thickness direction is larger than the distance between the third rising portion and the fourth rising portion in the first direction.

[0246] Note 8.

[0247] A semiconductor device according to any one of appendices 1 to 7,

[0248] The size of the first convex member in the thickness direction is larger than the distance between the first rising portion and the second rising portion in the first direction.

[0249] Note 9.

[0250] According to the semiconductor device described in Appendix 4,

[0251] The first bases of two adjacent first convex members in the second direction are connected,

[0252] The second base portions of two of the first convex members adjacent to each other in the second direction are connected.

[0253] Note 10.

[0254] According to the semiconductor device described in Supplementary Note 9,

[0255] The first convex members adjacent to each other in the second direction are arranged to be offset from each other in the second direction.

[0256] Note 11.

[0257] According to the semiconductor device described in Supplementary Note 9,

[0258] The first front end portion is curved when viewed in the thickness direction.

[0259] The first rising portion and the second rising portion are curved.

[0260] Note 12.

[0261] A semiconductor device according to any one of appendices 9 to 11,

[0262] The heat dissipation member has a slit located between the first rising portion, the second rising portion, and the first front end portion of the first convex member adjacent to each other in the second direction.

[0263] Note 13.

[0264] A semiconductor device according to any one of appendices 1 to 12,

[0265] The first front end portion is in a flat plate shape.

[0266] Note 14.

[0267] A semiconductor device according to any one of appendices 1 to 12,

[0268] The first front end portion is in a folded shape.

[0269] Note 15.

[0270] A semiconductor device according to any one of appendices 1 to 14,

[0271] The first base portion and the second base portion are joined to the back surface by welding.

[0272] Note 16.

[0273] A power conversion unit, comprising:

[0274] The semiconductor device according to any one of Supplementary Notes 1 to 15; and

[0275] a cooling device disposed on the second side in the thickness direction of the semiconductor device,

[0276] The cooling device includes a housing that accommodates the heat dissipating member and allows a cooling medium to flow.

[0277] Note 17.

[0278] According to the power conversion unit described in Appendix 16,

[0279] In the housing, the cooling medium flows in the second direction.

[0280] Note 18.

[0281] A method for manufacturing a semiconductor device, comprising:

[0282] A process of forming a heat dissipation component using a metal plate material; and

[0283] a step of disposing the heat dissipation component on the back side of the supporting substrate,

[0284] The process of forming the heat dissipation component includes:

[0285] forming a plurality of cutting lines along a first direction perpendicular to the thickness direction of the metal plate material; and

[0286] A process of forming a plurality of first convex portions by deforming a portion of the metal plate material sandwiched between the adjacent cutting lines in a second direction perpendicular to the thickness direction and the first direction into a shape protruding in the thickness direction.

[0287] Note 19.

[0288] According to the method for manufacturing a semiconductor device as described in Supplementary Note 18,

[0289] A size of the heat dissipating member in the first direction is smaller than a size of the metal plate material in the first direction.

[0290] Note 20.

[0291] A method for manufacturing a semiconductor device according to Supplement 18 or 19,

[0292] In the step of arranging the heat dissipating member on the rear surface of the supporting substrate, the heat dissipating member is joined to the rear surface by laser welding.

[0293] Explanation of symbols

[0294] A1—semiconductor device; B1—power conversion unit; 2—heat dissipation component; 3—support substrate; 5—first conductive component; 6—second conductive component; 8—sealing resin; 9—cooling device; 10A—first semiconductor element; 10B—second semiconductor element; 11—first main surface electrode; 12—second main surface electrode; 13—third main surface electrode; 15—back electrode; 17—thermistor; 19A—first conductive bonding material; 19B—second conductive bonding material; 20—metal plate material; 21—first convex portion; 22—second convex portion; 23—slit; 31—insulating layer; 32—first metal layer; 32A—first conductive portion; 32B—second conductive portion; 33—back metal layer; 35—first metal portion; 36—second metal part; 41—first terminal; 42—second terminal; 43—third terminal; 44—fourth terminal; 45—control terminal; 46A, 46B, 46C, 46D, 46E—first control terminal; 47A, 47B, 47C, 47D—second control terminal; 48—control terminal support; 48A—first support part; 48B—second support part; 49—bonding material; 51—main part; 52—first bonding part; 53—second bonding part; 59—conductive bonding material; 61—third bonding part; 64—first path part; 65—second path part; 66—third path part; 67—fourth path part; 69—conductive bonding material; 71, 72, 73, 74—lead; 81—resin main part 82—resin back surface; 86—resin gap; 89—groove; 91—box; 92—supply; 93—discharge; 101—element main surface; 102—element back surface; 121—gate finger; 201—cutting line; 211—first base; 212—second base; 213—first rising portion; 214—second rising portion; 215—first front end; 221—third base; 222—fourth base; 223—third rising portion; 224—fourth rising portion; 225—second front end; 301A—first main surface; 301B—second main surface; 302—back surface; 451—bracket; 452—metal pin; 459—conductive bonding material; 481—insulating layer; 482—first metal layer; 482 A—first part; 482B—second part; 482C—third part; 482D—fourth part; 482E—fifth part; 482F—sixth part; 483—second metal layer; 514—first opening; 602—first step portion; 603—second step portion; 611—flat portion; 612—first inclined portion; 641—first strip-shaped portion; 643—first extension portion; 649—recess; 651—second strip-shaped portion; 653—second extension portion; 659, 669—recess; 831, 832—resin side surface; 832a—recess; 833—resin side surface; 834—resin side surface; 851—first protrusion; 851a—first protrusion end surface; 851b—recess; 851c—inner wall surface;852—second protrusion; 919—sealing material; Cm—cooling medium; M—welding portion; x—first direction; y—second direction; z—thickness direction. ;

Claims

1. A semiconductor device, characterized in that: have: Semiconductor components; a supporting substrate that supports the semiconductor element; and a sealing resin covering the semiconductor element and a portion of the supporting substrate, The support substrate has a main surface facing a first side in a thickness direction and a back surface facing a second side and exposed from the sealing resin. The semiconductor element is mounted on the main surface. It also includes a heat dissipation component disposed on the back side. The heat dissipation component includes a plurality of first convex members, each of which has a first base, a second base, a first rising portion, a second rising portion, and a first front end portion. The first base and the second base are spaced apart from each other in a first direction perpendicular to the thickness direction and are respectively joined to the back surface. The first front end portion is located between the first base portion and the second base portion in the first direction and is located closer to the second side than the first base portion and the second base portion in the thickness direction. The first rising portion is connected to the first base portion and the first front end portion. The second rising portion is connected to the second base portion and the first front end portion. The plurality of first convex members are arranged in a matrix along a plane including the first direction and a second direction perpendicular to the thickness direction and the first direction.

2. The semiconductor device according to claim 1, wherein: The first rising portions of two of the first convex members adjacent to each other in the second direction are spaced apart from each other.

3. The semiconductor device according to claim 2, wherein: The second rising portions of two of the first convex members adjacent to each other in the second direction are spaced apart from each other.

4. The semiconductor device according to claim 3, wherein: The first base portion of one of the two first convex members adjacent to each other in the first direction is connected to the second base portion of the other one.

5. The semiconductor device according to claim 4, wherein: The first bases of two adjacent first convex members in the second direction are spaced apart from each other. The second base portions of two of the first convex members adjacent to each other in the second direction are spaced apart from each other.

6. The semiconductor device according to claim 5, wherein: The heat dissipation component further includes a plurality of second convex members, each of which has a third base, a fourth base, a third rising portion, a fourth rising portion, and a second front end portion. The third base portion is connected to the first front end portions of two first convex members adjacent to each other in the second direction. The fourth base portion is connected to the first front end portions of the other two first convex members adjacent to each other in the second direction. The second front end portion is located between the third base portion and the fourth base portion in the first direction and is located closer to the second side than the third base portion and the fourth base portion in the thickness direction. The third rising portion is connected to the third base portion and the second front end portion. The third rising portion is connected to the fourth base portion and the second front end portion.

7. The semiconductor device according to claim 6, wherein: The size of the second convex member in the thickness direction is larger than the distance between the third rising portion and the fourth rising portion in the first direction.

8. The semiconductor device according to any one of claims 1 to 7, characterized in that The size of the first convex member in the thickness direction is larger than the distance between the first rising portion and the second rising portion in the first direction.

9. The semiconductor device according to claim 4, wherein: The first bases of two adjacent first convex members in the second direction are connected, The second base portions of two of the first convex members adjacent to each other in the second direction are connected.

10. The semiconductor device according to claim 9, wherein: The first convex members adjacent to each other in the second direction are arranged to be offset from each other in the second direction.

11. The semiconductor device according to claim 9, wherein: The first front end portion is curved when viewed in the thickness direction. The first rising portion and the second rising portion are curved.

12. The semiconductor device according to any one of claims 9 to 11, characterized in that The heat dissipation member has a slit located between the first rising portion, the second rising portion, and the first front end portion of the first convex member adjacent to each other in the second direction.

13. The semiconductor device according to any one of claims 1 to 12, characterized in that The first front end portion is in a flat plate shape.

14. The semiconductor device according to any one of claims 1 to 12, characterized in that The first front end portion is in a folded shape.

15. The semiconductor device according to any one of claims 1 to 14, characterized in that The first base portion and the second base portion are joined to the back surface by welding.

16. A power conversion unit, characterized in that: have: The semiconductor device according to any one of claims 1 to 15; and a cooling device disposed on the second side in the thickness direction of the semiconductor device, The cooling device includes a housing that accommodates the heat dissipating member and allows a cooling medium to flow.

17. The power conversion unit according to claim 16, characterized in that: In the housing, the cooling medium flows in the second direction.

18. A method for manufacturing a semiconductor device, characterized in that: have: A process of forming a heat dissipation component using a metal plate material; and a step of disposing the heat dissipation component on the back side of the supporting substrate, The process of forming the heat dissipation component includes: forming a plurality of cutting lines along a first direction perpendicular to the thickness direction of the metal plate material; and A process of forming a plurality of first convex portions by deforming a portion of the metal plate material sandwiched between the adjacent cutting lines in a second direction perpendicular to the thickness direction and the first direction into a shape protruding in the thickness direction.

19. The method for manufacturing a semiconductor device according to claim 18, wherein: A size of the heat dissipating member in the first direction is smaller than a size of the metal plate material in the first direction.

20. The method for manufacturing a semiconductor device according to claim 18 or 19, characterized in that: In the step of arranging the heat dissipating member on the rear surface of the supporting substrate, the heat dissipating member is joined to the rear surface by laser welding.

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