Method for improving deep plating capacity of inclined co-sputtering type magnetron sputtering
By regulating the target gun angle and chamber vacuum degree of magnetron sputtering, combined with the adhesion layer and seed layer target, the existing magnetron sputtering deep plating capacity is solved, and a more uniform and efficient deep plating effect is achieved.
Patent Information
- Application Number
- CN202411759685.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-03
- Publication Date
- 2025-03-07
AI Technical Summary
The existing magnetron sputtering technology has limited effect in deep plating capabilities and is difficult to effectively sputter to the walls of the holes, resulting in insufficient electroplating filling holes, affecting the electrical extension and interconnection in the Z-axis direction.
By regulating the target gun angle and chamber vacuum of magnetron sputtering, including working gas flow rate and background vacuum, a composite layer is formed by combining the adhesion layer target and seed layer target to improve the deep plating ability of magnetron sputtering.
It effectively improves the deep plating ability of magnetron sputtering, improves the uniformity of the deep plating ability of holes at each position on the substrate surface, and ensures the high bonding strength between the composite layer and the substrate.
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Figure CN119571275A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of magnetron sputtering, and in particular to a method for improving the deep plating capability of inclined co-sputtering magnetron sputtering. Background Art
[0002] As AI computing power requirements increase and hardware circuits become more complex, glass substrates are expected to become the next generation of semiconductor advanced packaging substrates. When filling metal in through glass vias (TGVs), there is no need to oxidize and insulate the sidewalls. Instead, the metal layer needs to be sputtered by magnetron sputtering, and then the through holes can be electroplated to achieve high-quality filling of TGVs. The depth of the magnetron sputtered hole determines whether electroplating can be achieved. If the magnetron sputtered metal layer cannot be sputtered to cover the hole wall, then the through hole cannot be filled with copper by electroplating, because electroplating relies on the magnetron sputtered metal layer to conduct current to achieve electroplating, and the purpose of electroplating hole filling is to achieve electrical extension and interconnection in the Z-axis direction.
[0003] At present, the scheme for improving the deep plating capability of magnetron sputtering is to achieve high aspect ratio micro-deep hole coating by using high-power pulsed magnetron sputtering. The surface and micropores of non-metallic material substrates such as microporous ceramics or microporous glass are plasma-etched and cleaned by using the self-developed arc electron source enhanced plasma cleaning and etching system (AEG), and then the surface of the substrate and the micropores with large aspect ratio are vacuum-plated with metal film by high-power pulsed (HiPIMS) magnetron sputtering. The existing methods have limited effect on improving the depth capability of magnetron sputtering.
[0004] In view of this, the present invention is proposed. Summary of the invention
[0005] One object of the present invention is to provide a method for improving the deep plating capability of inclined co-sputtering magnetron sputtering. By coordinating various steps and parameter conditions, the deep plating capability of magnetron sputtering can be effectively improved, the uniformity of the hole depth capability at various positions on the substrate surface can be ensured, and the high bonding strength between the composite layer and the substrate can be ensured.
[0006] In order to achieve the above-mentioned purpose of the present invention, the following technical solutions are particularly adopted:
[0007] A method for improving the deep plating capability of inclined co-sputtering magnetron sputtering comprises the following steps:
[0008] The target gun angle and chamber vacuum of magnetron sputtering are regulated respectively, and the chamber vacuum includes the working gas flow rate and the background vacuum of the chamber. A plate substrate having a plurality of through holes with different depth-to-diameter ratios on the surface is placed in the magnetron sputtering chamber for magnetron sputtering. The target material of the magnetron sputtering includes an adhesion layer target material and a seed layer target material, and working gas is introduced during the magnetron sputtering process. The sputtering angle of the magnetron sputtering is adjusted in the range of 25° to 90°; the flow rate of the working gas is adjusted in the range of 40 to 100 sccm; the background vacuum is adjusted in the range of 8e -6 ~8e -7 Torr.
[0009] In some embodiments, the background vacuum is 1e -6 Torr~3e -6 Torr; the sputtering angle of the magnetron sputtering is 25° to 35°; the flow rate of the working gas is 80 to 100 sccm.
[0010] In some embodiments, the background vacuum is 2e -6 Torr; the sputtering angle of the magnetron sputtering is 25°; the flow rate of the working gas is 100 sccm.
[0011] In some implementations, the adhesion layer target material includes Ti; and the seed layer target material includes Cu.
[0012] In some embodiments, the adhesion layer target and the seed layer target are sputtered at the same angle.
[0013] In some implementations, the adhesion layer target material and the seed layer target material form a composite layer in the through hole and the surface of the substrate; the plating test range of the through hole is (1 to 10):1.
[0014] In some embodiments, the substrate comprises a glass substrate, and the substrate has been previously washed and dried.
[0015] In some embodiments, the drying temperature is 120-150° C., and the drying time is 60-90 min.
[0016] In some embodiments, the working gas includes argon.
[0017] In some embodiments, an inclined co-sputtering magnetron sputtering device is used, and the inclined co-sputtering magnetron sputtering device includes a magnetron sputtering chamber, a sputtering target gun, an ion source, a vacuum pumping device and a working gas supply device; a plurality of the sputtering target guns are arranged on the upper part of the magnetron sputtering chamber, and the sputtering angle of the sputtering target guns is adjustable; the sputtering target guns are each independently loaded with an adhesion layer target material and a seed layer target material; a workpiece carrying device is arranged at the lower part of the magnetron sputtering chamber for fixing the substrate; the magnetron sputtering chamber is provided with a first air hole and a second air hole, the first air hole is connected to the vacuum pumping device, and the second air hole is connected to the working gas supply device.
[0018] In some implementations, the vertical distance between the tip of the sputtering target gun and the substrate is 18-19 cm.
[0019] In some implementations, the number of the sputtering target guns is three.
[0020] Compared with the prior art, the present invention has the following beneficial effects:
[0021] The method of the present invention is to provide a method for forming a vacuum chamber at a sputtering angle of 25° to 90°, a flow rate of a working gas of 40 to 100 sccm, and a background vacuum of 8e -6 Torr~8e -7 Torr range, each step and condition cooperate with each other, and the parameters that effectively improve the thickness-to-diameter ratio of magnetron sputtering are: sputtering angle of 25°; working gas flow rate of 100 sccm; background vacuum of 2e -6 Torr, under this parameter, the thickness-to-diameter ratio of magnetron sputtering is increased from the original 1:1 to 3:1, which can effectively improve the deep plating ability of magnetron sputtering for deep microholes, improve the uniformity of the deep plating ability of holes at various positions on the substrate surface, and ensure the high-strength bonding between the composite layer and the substrate. BRIEF DESCRIPTION OF THE DRAWINGS
[0022] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0023] Figure 1 It is a schematic structural diagram of the secondary sputtering equipment of the present invention.
[0024] Reference numerals:
[0025] 1-magnetron sputtering chamber, 101-sputtering target gun, 102-workpiece carrying device, 2-vacuum extraction device, 3-working gas supply device. DETAILED DESCRIPTION
[0026] The embodiments of the present invention will be described in detail below in conjunction with the examples, but it will be appreciated by those skilled in the art that the following examples are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. If no specific conditions are specified in the examples, the conditions are carried out according to normal conditions or the conditions recommended by the manufacturer. If the manufacturer of the reagents or instruments used is not specified, they are all conventional products that can be obtained commercially.
[0027] A method for improving the deep plating capability of magnetron sputtering comprises the following steps:
[0028] The target gun angle and chamber vacuum of magnetron sputtering are regulated respectively, and the chamber vacuum includes the working gas flow rate and the background vacuum of the chamber. A plate substrate having a plurality of through holes with different depth-to-diameter ratios on the surface is placed in the magnetron sputtering chamber for magnetron sputtering. The target material of the magnetron sputtering includes an adhesion layer target material and a seed layer target material, and working gas is introduced during the magnetron sputtering process. The sputtering angle of the magnetron sputtering is adjusted in the range of 25° to 90°; the flow rate of the working gas is adjusted in the range of 40 to 100 sccm; the background vacuum is adjusted in the range of 8e -6 ~8e -7 Torr.
[0029] The present invention controls the sputtering angle and vacuum degree (including the background vacuum degree and the working gas flow rate), and controls the background vacuum degree, the sputtering angle of magnetron sputtering and the flow rate of the working gas within an appropriate range, which cooperate with each other, thereby improving the deep plating ability of magnetron sputtering for deep micropores, improving the uniformity of the deep plating ability of holes at various positions on the substrate surface, and ensuring high bonding strength between the composite layer and the substrate.
[0030] Magnetron sputtering mechanism: It uses the principle of ion bombardment and sputtering, and is achieved by applying high-frequency electric field and static magnetic field in a vacuum environment. In this process, the material to be sputtered is made into a target, that is, an adhesion layer target and a seed layer target, which are installed in a vacuum chamber; by applying an electric field, plasma is formed on the surface of the target, and at the same time, the static magnetic field guides the ions in the plasma to the target surface for bombardment. The bombarded target surface will release atoms or molecules, which are deposited at high speed on the through holes and surface of the substrate to form a composite layer.
[0031] In the present invention, deep plating capability (plating capability) refers to: the coverage depth capability of the composite layer formed by the adhesion layer target material and the seed layer target material in the through hole on the substrate surface, that is, the ratio of the composite layer thickness in the through hole to the hole diameter.
[0032] In some embodiments, the background vacuum degree includes but is not limited to 8e -6 Torr, 6e -6 Torr, 4e-6 Torr, 2e - 6 Torr or 8e -7 Torr, etc., or any range between them. The sputtering angle of magnetron sputtering includes but is not limited to 25°, 45°, or 90°, etc., or any range between them. The flow rate of the working gas includes but is not limited to 40sccm, 50sccm, 60sccm, 70sccm, 80sccm, 90sccm, 100sccm, etc., or any range between them.
[0033] If the sputtering angle, background vacuum and working gas flow rate are not within the above range, the deep plating ability will be affected, the uniformity of the deep plating ability of the holes at various positions on the substrate surface will be poor, and the bonding force between the composite layer and the substrate will be poor.
[0034] In some embodiments, the background vacuum is further controlled to be 1e -6 Torr~3e -6 Torr, the sputtering angle of the magnetron sputtering is 25° to 35°, and the flow rate of the working gas is 80 to 100 sccm, which can further ensure the deep plating ability and the bonding strength of the composite layer.
[0035] In some embodiments, the background vacuum is 2e -6 Torr; the sputtering angle of the magnetron sputtering is 25°; the flow rate of the working gas is 100 sccm. Through the coordination of various conditions, the deep plating ability is better and the bonding force of the composite layer is higher. The background vacuum degree is less than 2e -6 Torr, the greater the vacuum, the less the metal layer will fall off after electroplating, and the background vacuum is greater than 2e -6 Torr, there is little difference after electroplating, and the preferred background vacuum is 2e -6 Torr.
[0036] In some implementations, the adhesion layer target material includes Ti; and the seed layer target material includes Cu.
[0037] In some embodiments, the adhesion layer target and the seed layer target are sputtered at the same angle.
[0038] In some embodiments, the adhesion layer target material and the seed layer target material form a composite layer in the through hole and the surface of the substrate; the plating test range of the through hole is (1 to 10): 1, for example 1: 1, 2: 1 or 3: 1, etc., or any range value between the two.
[0039] In some embodiments, the through-hole depth (i.e., the board thickness) is 1.3 mm, and the test board used has hole diameters of 1.3 mm, 0.45 mm, 0.25 mm, 0.15 mm, and 0.13 mm, that is, the corresponding thickness-to-diameter ratios (depth-to-diameter ratios) are 1:1, 3:1, 5:1, 8:1, and 10:1, respectively. The optimal parameters finally debugged can completely sputter the 1:1 and 3:1 through-holes to cover the metal layer completely, so the deep plating capacity after debugging can be increased from the original parameter of 1:1 to 3:1.
[0040] In some embodiments, the base includes a glass substrate, which is a packaging substrate made of photosensitive glass as raw material, has the advantages of low loss, high-density through holes, etc., and can also achieve more precise line width and line spacing control, and is suitable for advanced packaging of high-performance chips.
[0041] The substrate is pre-washed and dried. Alcohol is used for washing. The invention adopts a suitable drying temperature and time. The drying temperature is 120-150°C, such as 120°C, 125°C, 130°C, 135°C, 140°C, 145°C, 150°C, etc., and the drying time is 60-90 minutes, such as 60 minutes, 70 minutes, 80 minutes or 90 minutes. The drying temperature should not be too low to prevent incomplete evaporation of the solvent from affecting the bonding strength of the sputtered composite layer.
[0042] In some embodiments, the working gas includes argon.
[0043] In some embodiments, the higher the vacuum degree, the longer the time required for vacuuming. -6 Torr, single-sided sputtering time is 40 to 50 minutes, vacuum degree is 8e -7 Torr, the construction time of a single surface is 90 to 120 minutes.
[0044] In some embodiments, the magnetron sputtering method of the present invention uses an inclined co-sputtering magnetron sputtering device, such as Figure 1 As shown, it includes a magnetron sputtering chamber 1, a sputtering target gun 101, an ion source, a vacuum device 2 and a working gas supply device 3; a plurality of sputtering target guns 101 are arranged on the upper part of the magnetron sputtering chamber 1, and the sputtering angle of the sputtering target guns 101 is adjustable; the sputtering target guns 101 are independently loaded with an adhesion layer target material and a seed layer target material; a workpiece carrying device 102 is arranged at the lower part of the magnetron sputtering chamber 1 for fixing the substrate; the magnetron sputtering chamber 1 is provided with a first air hole and a second air hole, the first air hole is connected to the vacuum device 2, and the second air hole is connected to the working gas supply device 3.
[0045] The magnetron sputtering equipment of the present invention can effectively control the background vacuum, sputtering angle and flow rate of the working gas through the cooperation of various devices, thereby ensuring the deep plating ability of the magnetron sputtering and ensuring the bonding strength between the composite layer and the substrate.
[0046] The ion source performs ion cleaning, increases the surface roughness of the substrate, and improves the bonding force between the metal layer and the substrate.
[0047] In some embodiments, the first air hole is provided with a first control valve for controlling opening and closing, and the background vacuum in the sputtering chamber is regulated by a vacuum pumping device. The second air hole is provided with a second control valve for controlling opening and closing. The working gas is provided to the sputtering chamber by a working gas supply device.
[0048] In some implementations, the vertical distance between the tip of the sputtering target gun and the substrate is 18-19 cm. Each embodiment may use 18 cm.
[0049] In some embodiments, the number of sputtering target guns is 3, of which two are used to set the adhesion layer target material, and one is used to set the seed layer target material.
[0050] In some embodiments, a method for improving the deep plating capability of magnetron sputtering comprises the following steps:
[0051] (a) Clean a glass substrate having a plurality of through holes with different aspect ratios, clean the surface of the substrate with alcohol, and then place the substrate in an oven and bake it at 120-150°C for 60-90 minutes to ensure that the moisture on the surface of the substrate is dried and the solvent is completely evaporated.
[0052] (b) Adjust the background vacuum of the sputtering chamber to 8e -6 ~8e -7 Torr.
[0053] (c) The glass substrate dried in step (a) is fixed on a workpiece carrier in a sputtering chamber, and the angles of the titanium target gun and the copper target gun are adjusted to change the angles at which the titanium target ions and the copper target ions are sputtered to the plate surface, that is, the sputtering angles of the adhesion layer target material and the seed layer target material are 25° to 90°, respectively; the working gas is Ar, and the flow rate of Ar is 40 to 100 sccm; Ti and Cu are deposited in the through holes and on the surface of the glass substrate to form a first composite layer.
[0054] (d) After the sputtering of one side surface is completed, the other side surface is adjusted to be sputtered to obtain a second composite layer, and the sputtering is completed to obtain a composite sheet.
[0055] The following is further explained in conjunction with specific embodiments and comparative examples.
[0056] Example 1
[0057] A method for improving the deep plating capability of magnetron sputtering comprises the following steps:
[0058] (a) A glass substrate having a plurality of through holes with different aspect ratios is cleaned, the surface of the substrate is cleaned with alcohol, and then placed in an oven and baked at 120°C for 60 minutes to ensure that the moisture on the surface of the substrate is dried.
[0059] (b) Adjust the background vacuum of the sputtering chamber to 8e -6 Torr.
[0060] (c) The glass substrate dried in step (a) is fixed on a workpiece carrier in a sputtering chamber, and the angles of the titanium target gun and the copper target gun are adjusted to change the angles at which the titanium target ions and the copper target ions are sputtered to the plate surface, that is, the sputtering angles of the adhesion layer target material and the seed layer target material are 45°, respectively; the working gas is Ar, and the flow rate of Ar is 50 sccm; Ti and Cu are deposited in the through holes and on the surface of the glass substrate to form a first composite layer.
[0061] (d) After the sputtering of one side surface is completed, the other side surface is adjusted to be sputtered to obtain a second composite layer, and the sputtering is completed to obtain a composite sheet.
[0062] Example 2
[0063] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 1 in that:
[0064] The angles of the titanium target gun and the copper target gun were adjusted so that the sputtering angles of the adhesion layer target and the seed layer target were 25° respectively.
[0065] Example 3
[0066] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 1 in that:
[0067] The angles of the titanium target gun and the copper target gun were adjusted so that the sputtering angles of the adhesion layer target and the seed layer target were 90° respectively.
[0068] Example 4
[0069] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 2 in that:
[0070] The flow rate of Ar is 40 sccm.
[0071] Example 5
[0072] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 2 in that:
[0073] The flow rate of Ar is 60 sccm.
[0074] Example 6
[0075] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 2 in that:
[0076] The flow rate of Ar is 70 sccm.
[0077] Example 7
[0078] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 2 in that:
[0079] The flow rate of Ar is 80 sccm.
[0080] Example 8
[0081] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 2 in that:
[0082] The flow rate of Ar is 90 sccm.
[0083] Example 9
[0084] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 2 in that:
[0085] The flow rate of Ar is 100 sccm.
[0086] Example 10
[0087] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 9 in that:
[0088] The background vacuum is 6e -6 Torr.
[0089] Embodiment 11
[0090] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 9 in that:
[0091] The background vacuum is 4e -6 Torr.
[0092] Example 12
[0093] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 9 in that:
[0094] The background vacuum is 2e -6 Torr.
[0095] Example 13
[0096] A method for improving the deep plating capability of magnetron sputtering, which differs from Example 9 in that:
[0097] The background vacuum is 8e -7 Torr.
[0098] Experimental example
[0099] 1. Cut the composite sheets after sputtering in each embodiment into slices, take the hole array in the center of the plate and any hole array around the plate to cut slices, grind to the center of the hole, and perform the following tests:
[0100] (1) Observe the deep plating ability of holes with five different depth-to-diameter ratios and test the thickness-to-diameter ratio.
[0101] (2) Compare the uniformity of hole depth plating in the center and around the same composite sheet. The uniformity of sputtering is determined by observing the difference in the depth of sputtering of through holes at different positions (such as the center and the edge) of the substrate by slicing. If the plating depth at different positions is very different, it means that the uniformity is poor, and the difference within ±0.1mm indicates good uniformity.
[0102] 2. The composite sheets of each embodiment and comparative example after sputtering were subjected to a surface composite layer bonding test. 3M tape was used to randomly stick several places on the surface of the composite sheet to observe the shedding of the composite layer. If the 3M tape did not fall off after being torn, it indicated that the bonding strength was good; if the 3M tape fell off after being torn, it indicated that the bonding strength was poor.
[0103] The test results are shown in Table 1.
[0104] Table 1 Test results
[0105]
[0106]
[0107] As can be seen from Table 1, the present invention controls the background vacuum degree, the sputtering angle of magnetron sputtering and the flow rate of the working gas, and the various steps and conditions cooperate with each other, thereby improving the deep plating ability of magnetron sputtering for deep micropores, making the thickness-to-diameter ratio (1-3.4):1, which can ensure the uniformity of the deep plating ability of the holes at various positions on the substrate surface and ensure the high bonding strength between the composite layer and the substrate.
[0108] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A method for improving the deep plating capability of tilted co-sputtering magnetron sputtering, characterized in that: The following steps are involved: The target gun angle and chamber vacuum of magnetron sputtering are respectively adjusted, and the chamber vacuum includes the flow rate of working gas and the background vacuum of the chamber. A plate substrate having a plurality of through holes with different depth-to-diameter ratios on the surface is placed in the magnetron sputtering chamber for magnetron sputtering. The target material of the magnetron sputtering includes an independent adhesion layer target material and a seed layer target material. Working gas is introduced during the magnetron sputtering process. The sputtering angle adjustment range of the magnetron sputtering is 25° to 90°; The flow rate adjustment range of the working gas is 40 to 100 sccm; The background vacuum degree adjustment range is 8e -6 ~8e -7 Torr.
2. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 1, characterized in that: The background vacuum is 1e -6 Torr~3e -6 Torr; The sputtering angle of the magnetron sputtering is 25° to 35°; The flow rate of the working gas is 80-100 sccm.
3. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 2, characterized in that: The background vacuum is 2e -6 Torr; The sputtering angle of the magnetron sputtering is 25°; The flow rate of the working gas is 100 sccm.
4. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 1, characterized in that: The adhesion layer target material includes Ti; The seed layer target material includes Cu.
5. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 1 or 4, characterized in that: The sputtering angle of the adhesion layer target material is the same as that of the seed layer target material.
6. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 1, characterized in that: The adhesion layer target material and the seed layer target material form a composite layer in the through hole and the surface of the substrate; the plating test range of the through hole is (1 to 10):
1.
7. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 6, characterized in that: The substrate comprises a glass substrate, and the substrate has been washed and dried in advance; The drying temperature is 120-150° C., and the drying time is 60-90 minutes.
8. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 1, characterized in that: The working gas includes argon.
9. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 1, characterized in that: Adopting an inclined co-sputtering magnetron sputtering device, the inclined co-sputtering magnetron sputtering device comprises a magnetron sputtering chamber, a sputtering target gun, an ion source, a vacuum pumping device and a working gas supply device; A plurality of sputtering target guns are arranged at the upper part of the magnetron sputtering chamber, and the sputtering angle of the sputtering target guns is adjustable; the sputtering target guns are independently loaded with adhesion layer target materials and seed layer target materials; a workpiece carrying device is arranged at the lower part of the magnetron sputtering chamber to fix the substrate; The magnetron sputtering chamber is provided with a first air hole and a second air hole, wherein the first air hole is connected to the vacuum pumping device, and the second air hole is connected to the working gas supply device.
10. The method for improving the deep plating capability of inclined co-sputtering magnetron sputtering according to claim 9, characterized in that: The vertical distance between the gun head of the sputtering target gun and the substrate is 18 to 19 cm; And / or, the number of the sputtering target guns is 3.