Parameter determination method of field limiting ring terminal, related device and preparation method

Abstract

The invention discloses a parameter determination method of a field limiting ring terminal, a related device and a preparation method. The method comprises the steps that model parameters of physical models of a plurality of field limiting ring structures are obtained, each field limiting ring structure comprises an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the widths of the initial field limiting rings corresponding to different field limiting ring structures are different; original parameter information is determined according to the multiple model parameters and the design withstand voltage value of the main junction, the field limiting ring terminal comprises the main junction and multiple field limiting ring areas located on one side of the main junction, and the original parameter information comprises the width of a field limiting ring in each field limiting ring area and the ring distance between every two adjacent field limiting rings; and performing simulation calculation on the field limiting ring terminal according to the original parameter information to obtain an actual withstand voltage value of the main junction, and adjusting the original parameter information under the condition that a difference value between the designed withstand voltage value and the actual withstand voltage value does not meet design requirements. The problem that in the prior art, it is difficult to design and obtain a field limiting ring terminal meeting the voltage withstanding requirement is solved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a parameter determination method, a preparation method, a parameter determination device, a computer-readable storage medium, and an electronic device of a field limiting ring terminal. Background Art

[0002] As a key switching device for weak current to control strong current, power semiconductors have broad application prospects in modern power systems, transportation, aerospace and other fields. However, due to the influence of the surface curvature radius of the semiconductor PN junction, the surface electric field of the PN junction is much larger than the maximum electric field in the body, making the device prone to breakdown on the surface under high voltage. Therefore, high-voltage power devices usually need to be equipped with terminal protection structures to reduce the maximum electric field on the surface, so that the device can break down in the body as much as possible, and the actual breakdown voltage can reach the ideal value of the breakdown voltage in the body as much as possible, thereby improving the device's withstand voltage characteristics.

[0003] At present, the terminal structure of traditional semiconductors usually adopts some special structures to reduce the surface electric field and improve the terminal withstand voltage. The field-limiting ring terminal has become the current mainstream technology due to its simple manufacturing process, stable process and low cost. However, when designing the field-limiting ring terminal, there are many related parameters involved, which brings great difficulties and challenges to the design. Especially when the withstand voltage requirement increases and the number of rings increases accordingly, how to design a field-limiting ring terminal that meets the withstand voltage requirement is a technical problem that needs to be solved urgently. Summary of the invention

[0004] The main purpose of the present application is to provide a parameter determination method, a preparation method, a parameter determination device, a computer-readable storage medium and an electronic device of a field limiting ring terminal, so as to at least solve the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirements.

[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a method for determining parameters of a field limiting ring terminal is provided, comprising: obtaining model parameters of a physical model of multiple field limiting ring structures, the field limiting ring structure comprising an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the width of the initial field limiting ring corresponding to different field limiting ring structures is different; determining original parameter information according to the multiple model parameters and the design withstand voltage value of the main junction, the original parameter information being parameter information of the field limiting ring terminal, the field limiting ring terminal comprising the main junction and multiple field limiting ring regions located on one side of the main junction, the original parameter information comprising the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings; performing simulation calculation on the field limiting ring terminal according to the original parameter information to obtain an actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining final parameter information.

[0006] Optionally, determining the original parameter information according to the multiple model parameters and the designed withstand voltage value of the main junction includes: obtaining a first functional relationship, multiple second functional relationships and multiple third functional relationships of the field limiting ring structure according to the multiple model parameters, the first functional relationship characterizing the relationship between the width of the initial field limiting ring, the initial ring spacing and the withstand voltage value of the initial main junction, the second functional relationship characterizing the relationship between the initial ring spacing and the withstand voltage value, the third functional relationship characterizing the relationship between the initial ring spacing and the residual pressure bearing value, the residual pressure bearing value is the difference between the withstand voltage value and the withstand voltage value of the initial field limiting ring, the initial ring spacing is the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships are different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships are different; determining the original parameter information according to the first functional relationship, the multiple second functional relationships, the multiple third functional relationships and the designed withstand voltage value of the main junction.

[0007] Optionally, determining the original parameter information according to the first functional relationship, a plurality of the second functional relationships, a plurality of the third functional relationships, and a designed withstand voltage value of the main junction includes: determining, according to at least the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding one to the field limiting ring widths, and a withstand voltage range that each field limiting ring region needs to satisfy, wherein the withstand voltage range includes a maximum withstand voltage value and a minimum withstand voltage value, the maximum of the maximum withstand voltage values ​​of the plurality of withstand voltage ranges is not less than the designed withstand voltage value, and the widths of the field limiting rings in the same field limiting ring region are all the same as the widths of the field limiting ring region corresponding to the field limiting ring region. the field limiting ring widths, any two of the field limiting ring widths are different; according to the plurality of the second functional relationships and the plurality of the third functional relationships, along the first direction, the ring spacings corresponding to the plurality of the field limiting rings are determined in sequence, so that the withstand voltage value that can be achieved by each field limiting ring region is not less than the corresponding maximum withstand voltage value, and the original parameter information is obtained, the first direction is the direction from the field limiting ring region to the main junction, the ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and the target structure, and the target structure is the field limiting ring or the main junction adjacent to the field limiting ring and located after the field limiting ring along the first direction.

[0008] Optionally, according to the plurality of the second functional relationships and the plurality of the third functional relationships, the ring spacings corresponding to the plurality of the field limiting rings are determined in sequence along the first direction, so that the withstand voltage value that can be achieved in each of the field limiting ring regions is not less than the corresponding maximum withstand voltage value, comprising: a first determining step, in the case where the nth field limiting ring is arranged in the mth field limiting ring region and n=1, determining that the withstand voltage value that can be achieved by the nth field limiting ring is the minimum withstand voltage value corresponding to the mth field limiting ring region; in the case where the nth field limiting ring is arranged in the mth field limiting ring region and n=1, determining that the withstand voltage value that can be achieved by the nth field limiting ring is the minimum withstand voltage value corresponding to the mth field limiting ring region; ≠1, according to the second functional relationship corresponding to the mth field limiting ring area, determining that the withstand voltage value that the nth field limiting ring can achieve is the withstand voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the n-1th field limiting ring, m≥1, n≥1, the n-1th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction; the second determining step, according to the third functional relationship corresponding to the mth field limiting ring area, determining that the ring spacing corresponding to the nth field limiting ring is the withstand voltage value corresponding to the case where the residual pressure value is equal to the initial ring spacing corresponding to the withstand voltage value that the nth field limiting ring can reach; a third determining step, in the case where the withstand voltage value that the mth field limiting ring region with the nth field limiting ring is able to reach is less than the maximum withstand voltage value corresponding to the mth field limiting ring region, determining that there is also an n+1th field limiting ring in the mth field limiting ring region that is located after the nth field limiting ring along the first direction, determining the n+1th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determining step and the second determining step. The determining step is performed at least once until the withstand voltage value that can be reached by the mth field limiting ring area is not less than the corresponding maximum withstand voltage value; the fourth determining step, when m is less than the number of the field limiting ring areas, determines the m+1th field limiting ring area as the new mth field limiting ring area, and cyclically performs the first determining step, the second determining step and the third determining step at least once until m is greater than or equal to the number of the field limiting ring areas, and the m+1th field limiting ring area is the field limiting ring area located after the mth field limiting ring area along the first direction.

[0009] Optionally, the first functional relationship includes multiple arrays, each of the arrays includes the width of the field limiting ring, multiple initial ring spacings corresponding to the width of the field limiting ring, and multiple withstand voltage values, the widths of the field limiting rings in any two of the arrays are different, and multiple field limiting ring widths, multiple field limiting ring regions corresponding to the field limiting ring widths, and a withstand voltage range that each field limiting ring region needs to meet are determined at least according to the first functional relationship and the designed withstand voltage value, including: selecting the arrays that meet the design target from the multiple arrays according to the first functional relationship, and determining that the width of the field limiting ring in each array that meets the design target is the field limiting ring width, the design target includes that the withstand voltage value of the main junction is not less than the designed withstand voltage value, and the area of ​​the field limiting ring terminal is not greater than the designed area value; according to the multiple field limiting ring widths, determining the number of the field limiting ring regions and the relative position relationship between the multiple field limiting ring regions, and obtaining the first field limiting ring region, the mth field limiting ring region, and the mth field limiting ring region arranged in sequence along the first direction. domain, ..., the pth field limiting ring region, p is the number of the field limiting ring regions, 1≤m<p; determine the maximum withstand voltage value corresponding to the pth field limiting ring region as the designed withstand voltage value, determine the minimum withstand voltage value corresponding to the pth field limiting ring region as the minimum value among the multiple withstand voltage values ​​corresponding to the first field limiting ring width according to the multiple withstand voltage values ​​corresponding to the first field limiting ring width, and obtain the withstand voltage range corresponding to the pth field limiting ring region, the first field limiting ring width is the field limiting ring width corresponding to the pth field limiting ring region; determine the maximum withstand voltage value corresponding to the mth field limiting ring region as the minimum withstand voltage value corresponding to the m+1th field limiting ring region, determine the minimum withstand voltage value corresponding to the mth field limiting ring region as the minimum value among the multiple withstand voltage values ​​corresponding to the second field limiting ring width according to the multiple withstand voltage values ​​corresponding to the second field limiting ring width, and obtain the withstand voltage range corresponding to the mth field limiting ring region, the second field limiting ring width is the field limiting ring width corresponding to the mth field limiting ring region.

[0010] Optionally, adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirement includes: when the difference is greater than a preset threshold, adding at least one new field limiting ring in the field limiting ring terminal so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; and when the difference is not greater than the preset threshold, adjusting the distance between at least part of the field limiting rings so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement.

[0011] Optionally, when the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, including: when the difference is greater than the preset threshold, the structure of the field limiting ring terminal is adjusted by adopting an adjustment principle of setting new field limiting rings one by one along a first direction between the main junction and the first field limiting ring until the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, wherein the distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information, the first field limiting ring is the field limiting ring closest to the main junction in the original parameter information, the width of the new field limiting ring is determined according to the width of the first field limiting ring, the ring spacing corresponding to the new field limiting ring is determined according to the minimum line width achievable by the process, and the first direction is a direction from the field limiting ring region to the main junction.

[0012] Optionally, when the difference is not greater than the preset threshold, adjusting the distance between at least part of the field limiting rings so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement, includes: when the difference is not greater than the preset threshold, using at least one of the following adjustment principles to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal meets the design requirement: starting from the field limiting ring region farthest from the main junction, gradually adjusting the distance between two adjacent field limiting rings located in different field limiting ring regions along a first direction, the first direction being a direction from the field limiting ring region to the main junction; starting from the new field limiting ring farthest from the main junction, gradually adjusting the ring spacing corresponding to the new field limiting ring along the first direction.

[0013] Optionally, obtaining model parameters of physical models of multiple field limiting ring structures includes: establishing multiple physical models; performing simulation calculations on the multiple physical models to obtain initial ring spacings, withstand voltage values, and pressure-bearing values ​​corresponding to widths of multiple initial field limiting rings.

[0014] Optionally, according to the multiple model parameters, a first functional relationship, multiple second functional relationships and multiple third functional relationships of the field limiting ring structure are obtained, including: using a data fitting method to fit the widths of multiple initial field limiting rings, the corresponding initial ring spacings and the withstand voltage values ​​to obtain the first functional relationship; using a data fitting method to fit the multiple initial ring spacings and the withstand voltage values ​​corresponding to the width of each initial field limiting ring to obtain the second functional relationship corresponding to the width of each initial field limiting ring; using a data fitting method to fit the multiple initial ring spacings and the residual pressure-bearing values ​​corresponding to the width of each initial field limiting ring to obtain the third functional relationship corresponding to the width of each initial field limiting ring, wherein the residual pressure-bearing value is the difference between the withstand voltage value and the pressure-bearing value of the initial field limiting ring.

[0015] Optionally, the data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multivariate linear regression, exponential function fitting.

[0016] According to another aspect of the present application, a method for preparing a field limiting ring terminal is provided, comprising: determining parameters of the field limiting ring terminal by using any of the methods for determining parameters of the field limiting ring terminal; and preparing the field limiting ring terminal according to the parameters of the field limiting ring terminal.

[0017] According to another aspect of the present application, a parameter determination device for a field limiting ring terminal is provided, comprising: an acquisition unit, used to acquire model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and the width of the initial field limiting ring corresponding to different field limiting ring structures is different; a determination unit, used to determine original parameter information according to the plurality of model parameters and the design withstand voltage value of the main junction, wherein the original parameter information is parameter information of the field limiting ring terminal, wherein the field limiting ring terminal comprises the main junction and a plurality of field limiting ring regions located at one side of the main junction, and the original parameter information comprises the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings; a calculation unit, used to perform simulation calculation on the field limiting ring terminal according to the original parameter information to obtain an actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, adjust the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining final parameter information.

[0018] According to another aspect of the present application, a computer-readable storage medium is provided, wherein the computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute any one of the methods for determining parameters of a field limiting loop terminal.

[0019] According to another aspect of the present application, an electronic device is provided, comprising: one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include a method for executing any one of the parameter determination methods of the field limiting loop terminal.

[0020] By applying the technical solution of the present application, physical model parameters of multiple field limiting ring structures with different ring widths of the field limiting ring are first obtained, and then original parameter information of the field limiting ring terminal including the ring width and the ring spacing is determined according to the multiple model parameters, so that the theoretical main junction withstand voltage of the field limiting ring terminal is not less than the designed withstand voltage; finally, the field limiting ring terminal is simulated and calculated according to the original parameter information to obtain the actual withstand voltage value of the field limiting ring terminal, and when the difference between the designed withstand voltage value and the actual withstand voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference meets the design requirements, thereby obtaining the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirements, ensuring that the final parameter information of the obtained field limiting ring terminal structure can meet the designed withstand voltage requirements, thereby ensuring that the device reliability of the obtained field limiting ring terminal is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0022] Figure 1 A hardware structure block diagram of a mobile terminal for executing a method for determining parameters of a field limiting loop terminal provided in an embodiment of the present application is shown;

[0023] Figure 2 A schematic diagram of a flow chart of a method for determining parameters of a field limiting loop terminal provided according to an embodiment of the present application is shown;

[0024] Figure 3 A schematic diagram of the structure of an initial model provided according to an embodiment of the present application is shown;

[0025] Figure 4 A curve diagram showing a first functional relationship provided according to an embodiment of the present application;

[0026] Figure 5 A graph showing a second functional relationship and a third functional relationship provided according to an embodiment of the present application;

[0027] Figure 6 A parameter determination flow chart of a field limiting loop terminal provided according to an embodiment of the present application is shown;

[0028] Figure 7 A schematic diagram of the structure of a field limiting loop terminal determined by a method for determining parameters of a field limiting loop terminal according to an embodiment of the present application is shown;

[0029] Figure 8 A schematic diagram of an electric field analysis of a field limiting ring terminal provided according to an embodiment of the present application is shown;

[0030] Fig. 9 A comparison result diagram of an actual withstand voltage value and a designed withstand voltage value of a field limiting ring terminal provided according to an embodiment of the present application is shown;

[0031] Fig.10 A structural block diagram of a parameter determination device for a field limiting loop terminal provided according to an embodiment of the present application is shown.

[0032] The above drawings include the following reference numerals:

[0033] 102, processor; 104, memory; 106, transmission device; 108, input and output devices. DETAILED DESCRIPTION

[0034] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0036] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the accompanying drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present application described here. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0037] As introduced in the background technology, there is a problem in the prior art that it is difficult to design a field limiting ring terminal that meets the voltage resistance requirements. To solve this technical problem, the embodiments of the present application provide a parameter determination method, a preparation method, a parameter determination device, a computer-readable storage medium and an electronic device for a field limiting ring terminal.

[0038] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0039] The method embodiments provided in the embodiments of the present application can be executed in a mobile terminal, a computer terminal or a similar computing device. Taking running on a mobile terminal as an example, Figure 1 1 is a hardware structure block diagram of a mobile terminal of a method for determining parameters of a field-limiting loop terminal according to an embodiment of the present invention. Figure 1 As shown, the mobile terminal may include one or more ( Figure 1 Only one is shown in the figure) a processor 102 (the processor 102 may include but is not limited to a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data, wherein the mobile terminal may also include a transmission device 106 and an input / output device 108 for communication functions. It can be understood by those skilled in the art that Figure 1 The structure shown is for illustration only and does not limit the structure of the mobile terminal. Figure 1 More or fewer components as shown, or with Figure 1 Different configurations are shown.

[0040] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the parameter determination method of the field limiting loop terminal in the embodiment of the present invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, the method described is implemented. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memory, or other non-volatile solid-state memory. In some examples, the memory 104 may further include a memory remotely arranged relative to the processor 102, and these remote memories may be connected to the mobile terminal via a network. Examples of the network include but are not limited to the Internet, an intranet, a local area network, a mobile communication network, and a combination thereof. The transmission device 106 is used to receive or send data via a network. The specific example of the network may include a wireless network provided by a communication provider of the mobile terminal. In one example, the transmission device 106 includes a network adapter (Network Interface Controller, referred to as NIC), which can be connected to other network devices through a base station so as to communicate with the Internet. In one example, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0041] In this embodiment, a method for determining parameters of a field limiting loop terminal running on a mobile terminal, a computer terminal or a similar computing device is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer executable instructions, and although a logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in an order different from that shown here.

[0042] Figure 2 1 is a flow chart of a method for determining parameters of a field limiting loop terminal according to an embodiment of the present application. Figure 2 As shown, the method comprises the following steps:

[0043] Step S202, obtaining model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and different field limiting ring structures correspond to initial field limiting rings with different widths;

[0044] In this embodiment, there may be only one initial field limiting ring in the field limiting ring structure.

[0045] Step S204, determining original parameter information according to the plurality of model parameters and the designed withstand voltage value of the main junction, wherein the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and a plurality of field limiting ring regions located on one side of the main junction, and the original parameter information includes the width of the field limiting ring in each of the field limiting ring regions and the ring spacing between adjacent field limiting rings;

[0046] In this embodiment, a plurality of field limiting ring terminals may be located on the same side of the main junction. According to a plurality of model parameters and the designed withstand voltage value of the main junction, the original parameter information is determined to ensure that the theoretical withstand voltage value of the main junction of the field limiting ring terminal can meet its designed withstand voltage value. By determining the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings, the structural size and arrangement of the field limiting ring in the field limiting ring terminal can be effectively controlled.

[0047] Step S206, performing simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining the final parameter information.

[0048] In this embodiment, the actual withstand voltage value is obtained by simulation calculation, and when there is a large difference between the actual withstand voltage value and the designed withstand voltage value, the original parameter information is adjusted to ensure that the actual withstand voltage value of the main junction of the field limiting ring terminal can meet its designed withstand voltage value. Those skilled in the art can flexibly set the specific threshold value of the design requirement according to the actual design requirements of the field limiting ring terminal. When the difference between the designed withstand voltage value and the actual withstand voltage value meets the design requirements, it is determined that the original parameter information is the final parameter information.

[0049] As described above, it can be seen that in the embodiment of the present application, the physical model parameters of multiple field limiting ring structures with different ring widths of the field limiting ring are first obtained, and then the original parameter information of the field limiting ring terminal including the ring width and the ring spacing is determined according to the multiple model parameters, so that the theoretical main junction withstand voltage of the field limiting ring terminal is not less than the designed withstand voltage; finally, the field limiting ring terminal is simulated and calculated according to the original parameter information to obtain the actual withstand voltage value of the field limiting ring terminal, and when the difference between the designed withstand voltage value and the actual withstand voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference meets the design requirements, thereby obtaining the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirements, ensuring that the final parameter information of the field limiting ring terminal structure obtained can meet the designed withstand voltage requirements, thereby ensuring that the device reliability of the obtained field limiting ring terminal is high.

[0050] Specifically, Figure 3is a structural schematic diagram of a physical model of a field limiting ring structure according to an embodiment of the present application, such as Figure 3 As shown, the physical model includes an initial main junction M and an initial field limiting ring M+1, and the physical model also includes a substrate S. The initial main junction M and the initial field limiting ring M+1 are spaced apart in the substrate S, Wd is the ring spacing between the initial main junction M and the initial field limiting ring M+1, Wri is the width of the initial field limiting ring M+1, and ½Wri is half of the width of the initial field limiting ring M+1.

[0051] According to some optional embodiments of the present application, step S204: determining original parameter information according to the plurality of model parameters and the designed withstand voltage value of the main junction includes:

[0052] Step S2041: acquiring a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure according to the plurality of model parameters, wherein the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing, and the withstand voltage value of the initial main junction, the second functional relationship represents the relationship between the initial ring spacing and the withstand voltage value, the third functional relationship represents the relationship between the initial ring spacing and the residual pressure bearing value, the residual pressure bearing value being the difference between the withstand voltage value and the pressure bearing value of the initial field limiting ring, the initial ring spacing being the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships being different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships being different;

[0053] Specifically, the second functional relationship is a function that characterizes the relationship between the initial ring spacing and the withstand voltage value when the width of the initial field limiting ring is fixed, and the second functional relationship corresponds one-to-one to the width of the initial field limiting ring; the third functional relationship is a function that characterizes the relationship between the initial ring spacing and the residual withstand voltage value when the width of the initial field limiting ring is fixed, and the third functional relationship corresponds one-to-one to the width of the initial field limiting ring.

[0054] Step S2042: determining the original parameter information according to the first functional relationship, a plurality of the second functional relationships, a plurality of the third functional relationships, and a designed withstand voltage value of the main junction.

[0055] In this embodiment, according to the first functional relationship, multiple second functional relationships and multiple third functional relationships, the original parameter information of the field limiting ring structure can be determined based on the designed withstand voltage value of the main junction, so as to further achieve that the theoretical withstand voltage value of the main junction meets the withstand voltage design value, and further ensure that the main junction of the field limiting ring terminal designed according to the original parameter information can theoretically effectively withstand the pressure when subjected to external pressure, thereby further improving the design accuracy of the field limiting ring structure, and facilitating the subsequent optimization of the performance of the field limiting ring structure by adjusting the original parameter information when the actual withstand voltage value does not meet the design requirements; and the present application avoids the problems of blind design and trial and error in the design process of the field limiting ring terminal, and improves the overall efficiency of the field limiting ring terminal design.

[0056] It should be noted that the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing and the withstand voltage value of the initial main junction, which involves parameters of the physical model, such as material properties, geometric dimensions, etc., and is used to describe the electrical characteristics of the field limiting ring structure; the multiple second functional relationships represent the relationship between the initial ring spacing and the withstand voltage value, indicating how the change in the ring spacing affects the withstand voltage capacity of the main junction; the multiple third functional relationships represent the relationship between the initial ring spacing and the residual withstand voltage value, indicating how the change in the ring spacing affects the withstand voltage capacity of the field limiting ring.

[0057] According to some further optional embodiments of the present application, step S2042: determining the original parameter information according to the first functional relationship, the plurality of the second functional relationships, the plurality of the third functional relationships, and the designed withstand voltage value of the main junction, comprises the following steps:

[0058] Step S20421: determining, at least according to the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding to the field limiting ring widths one by one, and a withstand voltage range that each field limiting ring region needs to satisfy, wherein the withstand voltage range includes a maximum withstand voltage value and a minimum withstand voltage value, the maximum of the maximum withstand voltage values ​​of the plurality of withstand voltage ranges is not less than the designed withstand voltage value, the widths of the field limiting rings in the same field limiting ring region are all the field limiting ring width corresponding to the field limiting ring region, and the widths of any two field limiting rings are different;

[0059] Specifically, the widths of the field limiting rings in the same field limiting ring region are the same, which are the field limiting ring widths corresponding to the field limiting ring region, while the field limiting ring widths corresponding to different field limiting ring regions are different. The number of field limiting ring widths is the number of field limiting ring regions. The number of field limiting ring regions, the withstand voltage range of each field limiting ring region, and the width of each field limiting ring are obtained through the steps. Among them, the withstand voltage range that the field limiting ring region needs to meet refers to the withstand voltage range that the main junction can reach after at least one field limiting ring is set in the field limiting ring region according to the corresponding field limiting ring width.

[0060] Step S20422: According to the plurality of the second functional relationships and the plurality of the third functional relationships, the ring spacings corresponding to the plurality of the field limiting rings are determined in sequence along the first direction, so that the voltage withstand value that can be achieved in each field limiting ring area is not less than the corresponding maximum voltage withstand value, and the original parameter information is obtained, wherein the first direction is the direction from the field limiting ring area to the main junction, the ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and the target structure, and the target structure is the field limiting ring or the main junction adjacent to the field limiting ring and located after the field limiting ring along the first direction.

[0061] Specifically, the third functional relationship corresponds one-to-one to the width of the initial field limiting ring. The voltage withstand value that can be achieved by the field limiting ring area refers to the voltage withstand value that the main junction can achieve when the field limiting ring is set in the field limiting ring area according to the ring spacing. The original parameter information may include the number of field limiting ring areas, the width of each field limiting ring and the ring spacing. The original parameter information may also include the number of field limiting ring areas, the voltage withstand range of each field limiting ring area, the width of each field limiting ring and the ring spacing. In the case where multiple field limiting ring areas are located on the left side of the main junction, the first direction is from left to right; in the case where multiple field limiting ring areas are located on the right side of the main junction, the first direction is from right to left. Along the first direction, the multiple field limiting rings are respectively the first field limiting ring, the second field limiting ring, the third field limiting ring, ... the last field limiting ring, and the distance between the first field limiting ring and the second field limiting ring is determined in sequence to obtain the ring spacing corresponding to the first field limiting ring, the distance between the second field limiting ring and the third field limiting ring is determined to obtain the ring spacing corresponding to the second field limiting ring, ..., the distance between the last field limiting ring and the main junction is determined to obtain the ring spacing corresponding to the last field limiting ring.

[0062] In this embodiment, by analyzing the first functional relationship and the designed withstand voltage value, multiple field limiting ring widths, multiple field limiting ring regions corresponding thereto, and withstand voltage ranges that each field limiting ring region needs to meet are determined, thereby ensuring that the maximum withstand voltage value in the multiple withstand voltage ranges is not less than the designed withstand voltage value; and a third functional relationship characterizing the relationship between the initial ring spacing and the residual pressure bearing value is determined according to the second functional relationship and the third functional relationship, and the ring spacing corresponding to the multiple field limiting rings is determined along the first direction through the multiple second functional relationships and the multiple third functional relationships, so that it can be ensured that each field limiting ring region determined according to these ring spacings can reach the corresponding maximum withstand voltage value, thereby obtaining original parameter information including the number of field limiting ring regions, the width of the field limiting ring in each field limiting ring region and the corresponding ring spacing, further ensuring that the theoretical withstand voltage value of the field limiting ring terminal main junction designed according to the original parameter information is not less than the designed withstand voltage value, thereby further achieving the effect of obtaining a field limiting ring terminal that meets the withstand voltage requirement.

[0063] In some further exemplary embodiments of the present application, according to a plurality of the second functional relationships and a plurality of the third functional relationships, the ring spacings corresponding to the plurality of field limiting rings are sequentially determined along the first direction, so that the withstand voltage value that can be achieved by each field limiting ring region is not less than the corresponding maximum withstand voltage value, including:

[0064] A first determining step, when the nth field limiting ring is arranged in the mth field limiting ring region and n=1, determining that the withstand voltage value that the nth field limiting ring can reach is the minimum withstand voltage value corresponding to the mth field limiting ring region; when the nth field limiting ring is arranged in the mth field limiting ring region and n≠1, determining, according to the second functional relationship corresponding to the mth field limiting ring region, that the withstand voltage value that the nth field limiting ring can reach is the withstand voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the n-1th field limiting ring, m≥1, n≥1, and the n-1th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction;

[0065] Specifically, when the first field limiting ring is provided in the field limiting ring region, the withstand voltage value that the first field limiting ring can achieve is the minimum withstand voltage value in the withstand voltage range that the field limiting ring region needs to meet. When more than one field limiting ring is provided in the field limiting ring region, the withstand voltage value that the nth field limiting ring can achieve is the withstand voltage value corresponding to when the initial ring spacing in the second functional relationship is equal to the ring spacing between the n-1th field limiting ring and the nth field limiting ring.

[0066] A second determination step, according to the third functional relationship corresponding to the mth field limiting ring area, determining the ring spacing corresponding to the nth field limiting ring as the initial ring spacing corresponding to the case where the residual pressure value is equal to the withstand voltage value that the nth field limiting ring can reach;

[0067] A third determining step, in the case where the withstand voltage value that can be reached by the mth field limiting ring region provided with the nth field limiting ring is less than the maximum withstand voltage value corresponding to the mth field limiting ring region, determining that there is also an n+1th field limiting ring located after the nth field limiting ring along the first direction in the mth field limiting ring region, determining the n+1th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determining step and the second determining step at least once until the withstand voltage value that can be reached by the mth field limiting ring region is not less than the corresponding maximum withstand voltage value;

[0068] A fourth determination step, when m is less than the number of the field limiting ring regions, determining the m+1th field limiting ring region as the new mth field limiting ring region, and cyclically executing the first determination step, the second determination step and the third determination step at least once, until m is greater than or equal to the number of the field limiting ring regions, and the m+1th field limiting ring region is the field limiting ring region located after the mth field limiting ring region along the first direction.

[0069] In the embodiment, the ring spacings between the field limiting rings in each field limiting ring region are determined in sequence along the first direction, so that the voltage withstand value that can be achieved by the field limiting rings arranged according to the ring spacings is not less than the maximum voltage withstand value corresponding to the field limiting ring region, further ensuring that the theoretical voltage withstand value of the main junction at the field limiting ring terminal is not less than the designed voltage withstand value.

[0070] According to some further optional embodiments of the present application, the first functional relationship includes a plurality of arrays, each of the arrays includes the width of the field limiting ring, a plurality of initial ring spacings corresponding to the width of the field limiting ring, and a plurality of the withstand voltage values, and the widths of the field limiting rings in any two of the arrays are different. Step S20421: determining a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding one-to-one to the field limiting ring widths, and a withstand voltage range that each of the field limiting ring regions needs to meet based on at least the first functional relationship and the designed withstand voltage value, comprises the following steps:

[0071] According to the first functional relationship, an array that meets a design goal is selected from the plurality of arrays, and the width of the field limiting ring in each array that meets the design goal is determined to be the field limiting ring width, wherein the design goal includes that the withstand voltage value of the main junction is not less than the designed withstand voltage value, and the area of ​​the field limiting ring terminal is not greater than the designed area value;

[0072] Specifically, there are multiple arrays that meet the design goal, and the number of arrays that meet the design goal is the number of field limiting ring areas. The field limiting rings in the same array have the same width, and in the same array, the field limiting ring width corresponds to multiple different initial ring spacings and multiple different withstand voltage values.

[0073] According to the widths of the plurality of field limiting rings, the number of the field limiting ring regions and the relative positional relationship between the plurality of field limiting ring regions are determined to obtain the first field limiting ring region, the mth field limiting ring region, ..., the pth field limiting ring region arranged in sequence along the first direction, where p is the number of the field limiting ring regions, and 1≤m<p;

[0074] Specifically, the pth field limiting ring region is the field limiting ring region closest to the main junction. The relative position relationship between the plurality of field limiting ring regions can be determined according to the size relationship between the plurality of field limiting ring widths, and the corresponding plurality of field limiting ring regions are arranged in the order of the plurality of field limiting ring widths from small to large along the first direction, that is, the field limiting ring widths corresponding to the first field limiting ring region, the mth field limiting ring region, ..., and the pth field limiting ring region are getting larger and larger.

[0075] Determine that the maximum withstand voltage value corresponding to the p-th field limiting ring region is the designed withstand voltage value, and determine that the minimum withstand voltage value corresponding to the p-th field limiting ring region is the minimum value among the multiple withstand voltage values ​​corresponding to the first field limiting ring width according to the multiple withstand voltage values ​​corresponding to the first field limiting ring width, so as to obtain the withstand voltage range corresponding to the p-th field limiting ring region, wherein the first field limiting ring width is the field limiting ring width corresponding to the p-th field limiting ring region;

[0076] Specifically, the maximum withstand voltage value of the pth field limiting ring region closest to the main junction is the designed withstand voltage value of the main junction; the minimum withstand voltage value of the pth field limiting ring region is the minimum value of multiple withstand voltage values ​​in the array where the first field limiting ring width is located.

[0077] Determine that the maximum withstand voltage value corresponding to the mth field limiting ring area is the minimum withstand voltage value corresponding to the m+1th field limiting ring area, and determine that the minimum withstand voltage value corresponding to the mth field limiting ring area is the minimum value among the multiple withstand voltage values ​​corresponding to the second field limiting ring width according to the multiple withstand voltage values ​​corresponding to the second field limiting ring width, so as to obtain the withstand voltage range corresponding to the mth field limiting ring area, and the second field limiting ring width is the field limiting ring width corresponding to the mth field limiting ring area.

[0078] In the embodiment, an array that meets the design area value and the design withstand voltage value is screened out from an array including the width of the field limiting ring, multiple initial ring spacings, and multiple withstand voltage values, and then the withstand voltage range and the field limiting ring width of each field limiting ring area in the field limiting ring terminal are determined based on the screened array. In this way, the original parameter information of the field limiting ring terminal that takes into account both miniaturization and high resistance can be obtained quickly and efficiently, thereby further ensuring that the parameter determination efficiency and accuracy of the field limiting ring terminal are high.

[0079] According to some other optional schemes of the present application, the original parameter information is adjusted so that the difference corresponding to the adjusted parameter information meets the design requirement, including: when the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal to obtain an adjusted field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; when the difference is not greater than the preset threshold, the distance between at least part of the field limiting rings is adjusted to obtain an adjusted field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement. In the embodiment, when the difference is greater than the preset threshold, it means that the actual withstand voltage value is much smaller than the designed withstand voltage value. At this time, the original parameter information is adjusted by adding a field limiting ring, so that the actual withstand voltage value is quickly improved. When the difference is less than or equal to the preset threshold, it means that the actual withstand voltage value is close to the designed withstand voltage value. At this time, the original parameter information is adjusted by adjusting the ring spacing between the field limiting rings, so that the surprise adjustment of the actual withstand voltage value can be achieved. While further ensuring that the parameter information of the adjusted field limiting ring terminal meets the withstand voltage design requirements, it further ensures that the parameter information of the field limiting ring terminal finally obtained meets the miniaturization requirements. According to the size relationship between the difference and the preset threshold, this embodiment adjusts the original parameter information of the field limiting ring terminal in two stages, so that the difference determined by the adjusted parameter information meets the design requirements, which not only ensures that the design efficiency of the field limiting ring terminal is high, but also further ensures that a field limiting ring terminal that meets the design withstand voltage requirements and miniaturization requirements can be obtained.

[0080] In some further exemplary embodiments of the present application, when the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, including: when the difference is greater than the preset threshold, an adjustment principle (hereinafter referred to as rule A) of setting new field limiting rings one by one along a first direction between the main junction and the first field limiting ring is adopted to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, wherein the distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information, the first field limiting ring is the field limiting ring closest to the main junction in the original parameter information, the width of the new field limiting ring is determined according to the width of the first field limiting ring, and the ring spacing corresponding to the new field limiting ring is determined according to the minimum line width achievable by the process. In this embodiment, when the actual withstand voltage value is much smaller than the designed withstand voltage value, starting from the side of the main junction close to the first field limiting ring, field limiting rings are added one by one along the first direction from the field limiting ring region to the main junction until the difference is less than or equal to the preset threshold value, which further ensures that the actual withstand voltage value can be increased to be close to or greater than the designed withstand voltage value as soon as possible, thereby further improving the design efficiency of the field limiting ring terminal.

[0081] Further, the width of the new field limiting ring is the width of the first field limiting ring, and the ring spacing corresponding to the new field limiting ring is the minimum line width achievable by the process.

[0082] In some other exemplary embodiments of the present application, when the difference is not greater than the preset threshold, adjusting the distance between at least part of the field limiting rings so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement, includes: when the difference is not greater than the preset threshold, using at least one of the following adjustment principles (hereinafter referred to as rule B) to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal meets the design requirement: starting from the field limiting ring region farthest from the main junction, gradually adjusting the distance between two adjacent field limiting rings located in different field limiting ring regions along a first direction, the first direction being a direction from the field limiting ring region to the main junction; starting from the new field limiting ring farthest from the main junction, gradually adjusting the ring spacing corresponding to the new field limiting ring along the first direction. In this embodiment, when the actual withstand voltage value is close to the designed withstand voltage value, starting from the field limiting ring area farthest from the main junction, the spacing between adjacent field limiting ring areas is gradually adjusted along the first direction, and / or starting from the new field limiting ring farthest from the main junction, the spacing between adjacent new field limiting rings is gradually adjusted along the first direction until the difference meets the design requirement, thereby further ensuring that the parameter information of the adjusted field limiting ring terminal meets the withstand voltage design requirement, and at the same time further ensuring that the parameter information of the field limiting ring terminal finally obtained meets the miniaturization requirement, thereby further achieving the effect of designing a field limiting ring terminal that takes into account both miniaturization and high blocking performance.

[0083] The embodiment can ensure that the structure of the field limiting ring terminal meets the design requirements, and fine adjustment can be performed even when the difference is not greater than the preset threshold. By gradually adjusting the distance between the field limiting rings and the ring spacing, the structure of the field limiting ring terminal can be effectively optimized to ensure its performance and stability within the design requirements. The field limiting ring terminal can be reasonably adjusted according to actual conditions to meet the design requirements.

[0084] It should be noted that the technicians of this application can determine the specific values ​​of the number of field limiting ring areas, the corresponding field limiting ring widths and the ring spacings corresponding to the field limiting rings according to actual needs and the solution of this application.

[0085] Exemplarily, obtaining model parameters of a physical model of a plurality of field limiting ring structures includes: establishing a plurality of the physical models; performing simulation calculations on the plurality of the physical models to obtain the initial ring spacings, withstand voltage values, and pressure bearing values ​​corresponding to the widths of the plurality of initial field limiting rings. In this embodiment, by establishing a plurality of physical models and performing simulation calculations on them, a plurality of initial ring spacings, a plurality of withstand voltage values, and a plurality of pressure bearing values ​​corresponding to the widths of the initial field limiting rings can be obtained more accurately, providing more accurate data support for the subsequent establishment of a functional relationship characterizing the corresponding relationship between these model parameters.

[0086] In some optional schemes of the present application, according to the multiple model parameters, the first functional relationship, multiple second functional relationships and multiple third functional relationships of the field limiting ring structure are obtained, including: using the data fitting method to fit the widths of the multiple initial field limiting rings, the corresponding initial ring spacings and the withstand voltage values ​​to obtain the first functional relationship; using the data fitting method to fit the multiple initial ring spacings and the withstand voltage values ​​corresponding to the width of each initial field limiting ring to obtain the second functional relationship corresponding to the width of each initial field limiting ring; using the data fitting method to fit the multiple initial ring spacings and the residual pressure-bearing values ​​corresponding to the width of each initial field limiting ring to obtain the third functional relationship corresponding to the width of each initial field limiting ring, and the residual pressure-bearing value is the difference between the withstand voltage value and the pressure-bearing value of the initial field limiting ring. The first functional relationship, the second functional relationship and the third functional relationship are established by the data fitting method, so as to facilitate the subsequent prediction, analysis and optimization of data according to these functional relationships.

[0087] Figure 4 The figure exemplarily shows that the widths of a plurality of initial field limiting rings, the corresponding initial ring spacings and the withstand voltage values ​​are fitted by a data fitting method to obtain a curve graph representing the first functional relationship. Figure 4 A graph showing the width of various initial field limiting rings is shown. Figure 4 It can be seen that when the width of the initial field limiting ring remains unchanged, the larger the initial ring spacing is, the smaller the corresponding withstand voltage value is; when the initial ring spacing is unchanged, the larger the width of the initial field limiting ring is, the larger the corresponding withstand voltage value is.

[0088] Figure 5 The graphs representing the second functional relationship BV(M) and the third functional relationship BV(M)-V(M+1) obtained by using the data fitting method are shown by way of example. Figure 5 In the method, the withstand voltage value (i.e., the ordinate of point B) that the nth field limiting ring can reach is first determined according to the second functional relationship, and then the ring spacing corresponding to the nth field limiting ring is determined according to the third functional relationship and the ordinate of point B as the initial ring spacing corresponding to the case where the residual pressure value is equal to the withstand voltage value that the nth field limiting ring can reach, that is, the intersection of the horizontal axis passing through point B and the third functional relationship is determined to obtain point C, and the horizontal coordinate of point C is the ring spacing corresponding to the nth field limiting ring. Then, the intersection of the vertical axis passing through point C and the second functional relationship is determined to obtain point D, and the vertical coordinate of point D is the withstand voltage value that the n+1th field limiting ring can reach, and the horizontal coordinate of point E, the intersection of the horizontal axis passing through point D and the third functional relationship, is the ring spacing corresponding to the n+1th field limiting ring. The ring spacing corresponding to the plurality of field limiting rings is determined in sequence in the manner described above to obtain the ring spacing corresponding to each field limiting ring.

[0089] Those skilled in the art may select any suitable data fitting method to process the model parameters to obtain the first functional relationship, the second functional relationship and the third functional relationship. Optionally, the data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multivariate linear regression, exponential function fitting.

[0090] In the embodiment, the data fitting method can determine the values ​​of the model parameters so that the model fits the actual data better. Different data fitting methods can select appropriate fitting functions according to the characteristics of the data and the form of the model, thereby obtaining more accurate parameter estimation results. For example, polynomial fitting is suitable for approximating complex nonlinear relationships, Gaussian fitting is suitable for data with obvious Gaussian distribution characteristics, multivariate linear regression is suitable for the influence of multiple independent variables on the dependent variable, and exponential function fitting is suitable for data that grows or decays exponentially. The parameters determined by the data fitting method can be used to establish a more accurate model to better describe and predict the actual data.

[0091] It should be noted that the polynomial fitting is a method of approximating and describing data points with a polynomial function. It finds the polynomial function that best fits the data points, so that the polynomial function can be used to predict the values ​​of unknown data points; the Gaussian fitting is a mathematical method for curve fitting to data. It is based on the Gaussian function, also known as the normal distribution curve, and fits the data by adjusting the parameters of the Gaussian function; the multiple linear regression is a statistical analysis method for establishing a relationship model between multiple independent variables and a dependent variable. In the multiple linear regression, the influence of the independent variable on the dependent variable is estimated by minimizing the residual sum of squares; the exponential function fitting is a mathematical method for approximating the relationship between a set of data points through an exponential model, which is particularly suitable for scenarios when the data shows a trend of rapid growth or decay over time.

[0092] Optionally, the semiconductor material used for the field limiting ring structure includes but is not limited to: silicon, silicon carbide, gallium nitride, gallium arsenide and other materials.

[0093] In order to enable those skilled in the art to more clearly understand the technical solution of the present application, the implementation process of the parameter determination method of the field limiting loop terminal of the present application will be described in detail below in combination with specific embodiments.

[0094] This embodiment relates to a specific method for determining parameters of a field limiting ring terminal. Taking setting a field limiting ring on the right side of the main junction as an example, Figure 6 As shown, the following steps are included:

[0095] Step S1: establishing a physical model of h field limiting ring structures, wherein the field limiting rings of the h physical models have different ring widths and variable ring spacings;

[0096] Optionally, in this embodiment, h=5, and the ring widths are: 6µm, 5µm, 4µm, 3µm, 2µm;

[0097] Step S2: by calculating the model parameters of h physical models, a first functional relationship f1 characterizing the ring width, the ring spacing and the model pressure resistance (i.e., the pressure resistance value of the main junction) is obtained;

[0098] Step S3: According to the first functional relationship, based on the design goal that the withstand voltage value is not less than the design withstand voltage value and the structural area is not greater than the design area, g physical models that meet the design goal are screened out from the h physical models, and g ring widths are obtained, thereby obtaining g field limiting ring areas and the withstand voltage range of each field limiting ring area. One field limiting ring area corresponds to one ring width, and the partition rule of the field limiting ring terminal is obtained:

[0099] zone1 (Wr1): BVmin~BV1,

[0100] zone2 (Wr2): BV1~BV2,

[0101] ...,

[0102] zonep (Wrp): BVp-1~BVp, where the withstand voltage values ​​BVmin, BV1, BV2, ..., BVp-1 and BVp are getting larger and larger, and BVp ≥ the design withstand voltage value BVaim;

[0103] Optionally, in this embodiment, three physical models are screened from five physical models, that is, g=3, the ring widths are 5µm, 4µm, and 2µm respectively, there are three field limiting ring regions, the ring width Wr1 of the field limiting ring in the first field limiting ring region zone1 is 2µm, the ring width Wr2 of the field limiting ring in the second field limiting ring region zone2 is 4µm, and the ring width Wr3 of the field limiting ring in the third field limiting ring region zone3 is 5µm;

[0104] Step S4: according to the model parameters of the g physical models, g second functional relationships f2 representing the relationship between the withstand voltage value of the main junction and the ring spacing are calculated, and g functional relationships f3 representing the relationship between the withstand voltage value of the field limiting ring and the ring spacing are calculated, and g third functional relationships f4 can be obtained by subtracting the second functional relationship f2 and the functional relationship f3;

[0105] Optionally, in this embodiment, the second functional relationship f2 obtained by fitting is respectively , , ; The functional relationships f3 are: , , ,in, Characterize the withstand voltage value, Characterize the pressure value, Characterize the ring width, , , are all constants, e is the Euler number, is the ring spacing, and i=6, 7, and 8 respectively represent that the amount of data involved in the fitting is 6, 7, and 8.

[0106] Step S5: For each field limiting ring region, the function is solved starting from the rightmost side of the main junction (i.e., the first field limiting ring far away from the main junction) using the second function relationship and the third function relationship to obtain the ring spacing distribution data corresponding to each field limiting ring, thereby establishing a primary multi-zone field ring terminal:

[0107] zone1 (Wr1): Wd1, Wd2, ..., Wdo, i.e., the field limiting ring area zone1 has a total of o ring spacings;

[0108] zone2 (Wr2): Wd1, Wd2, ..., Wdp', i.e. the field limiting ring area zone2 has a total of p' ring spacings;

[0109] ...,

[0110] zonep (Wrp): Wd1, Wd2, ..., Wdq, i.e., the field limiting ring zone zonep has a total of q ring spacings;

[0111] Step S6: Calculate and analyze the primary multi-zone field ring terminal to determine the actual withstand voltage (BV) value of the structure. If the actual withstand voltage value of the structure meets the design withstand voltage value, the structure is determined to be the final field limiting ring terminal structure. If the actual withstand voltage value of the structure does not meet the design withstand voltage value, the parameters of the field limiting ring terminal are adjusted using the AB rule until the actual withstand voltage value of the structure meets the design withstand voltage value to obtain the final field limiting ring terminal structure, wherein the AB rule includes the A rule and the B rule. The A rule is: when the actual withstand voltage value BV is much smaller than the design withstand voltage value, the field limiting ring terminal structure is determined to be the final field limiting ring terminal structure. When the actual withstand voltage value BV is close to the designed withstand voltage value BVaim, the position of the field limiting rings is optimized starting from the rightmost side of the main junction: the spacing between each field limiting ring area, the spacing between the field limiting rings added in rule A, until the actual withstand voltage value BV meets the designed withstand voltage value BVaim.

[0112] Figure 7 The structure diagram of the field limiting loop terminal determined by the method for determining the parameters of the field limiting loop terminal of the present application is exemplarily shown. Figure 8 It is shown as an example Figure 7 The electric field analysis diagram of the field limiting ring terminal is shown in the figure. Fig. 9 It is shown as an example Figure 7 The comparison result of the actual withstand voltage value and the designed withstand voltage value of the field limiting ring terminal is shown in the figure, Figure 7 , Figure 8 and Fig. 9 As shown, the final terminal withstand voltage exceeds the designed withstand voltage value, and the terminal size is compact, which alleviates the electric field concentration effect at the terminal of the power semiconductor device, improves the terminal efficiency of the power semiconductor device, and saves the time required for design. The final design result obtained in this embodiment meets the electric field expansion and withstand voltage requirements of the terminal protection.

[0113] It should be noted that the specific relationship formulas of the second functional relationship f2 and the functional relationship f3 are not limited to the above relationship formulas, and those skilled in the art can obtain different types of relationship formulas according to data fitting to characterize the functional relationship.

[0114] The embodiment of the present application also provides a parameter determination device for a field limiting loop terminal. It should be noted that the parameter determination device for a field limiting loop terminal in the embodiment of the present application can be used to execute the parameter determination method for a field limiting loop terminal provided in the embodiment of the present application. The device is used to implement the embodiments and preferred implementations, and the descriptions that have been made will not be repeated. As used below, the term "module" can be a combination of software and / or hardware that implements a predetermined function. Although the device described in the following embodiments is preferably implemented in software, the implementation of hardware, or a combination of software and hardware, is also possible and conceivable.

[0115] The following introduces a parameter determination device for a field limiting loop terminal provided in an embodiment of the present application.

[0116] Fig.10 is a schematic diagram of a parameter determination device of a field limiting loop terminal according to an embodiment of the present application. Fig.10 As shown, the device comprises:

[0117] An acquisition unit 10 is used to acquire model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and different field limiting ring structures correspond to different initial field limiting ring widths;

[0118] In this embodiment, there may be only one initial field limiting ring in the field limiting ring structure.

[0119] A determination unit 20 is used to determine original parameter information according to a plurality of the model parameters and a designed withstand voltage value of the main junction, wherein the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and a plurality of field limiting ring regions located on one side of the main junction, and the original parameter information includes a width of a field limiting ring in each of the field limiting ring regions and a ring spacing between adjacent field limiting rings;

[0120] In this embodiment, a plurality of field limiting ring terminals may be located on the same side of the main junction. According to a plurality of model parameters and the designed withstand voltage value of the main junction, the original parameter information is determined to ensure that the theoretical withstand voltage value of the main junction of the field limiting ring terminal can meet its designed withstand voltage value. By determining the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings, the structural size and arrangement of the field limiting ring in the field limiting ring terminal can be effectively controlled.

[0121] The calculation unit 30 is used to perform simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, adjust the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining the final parameter information.

[0122] In this embodiment, the actual withstand voltage value is obtained by simulation calculation, and when there is a large difference between the actual withstand voltage value and the designed withstand voltage value, the original parameter information is adjusted to ensure that the actual withstand voltage value of the main junction of the field limiting ring terminal can meet its designed withstand voltage value. Those skilled in the art can flexibly set the specific threshold value of the design requirement according to the actual design requirements of the field limiting ring terminal. When the difference between the designed withstand voltage value and the actual withstand voltage value meets the design requirements, it is determined that the original parameter information is the final parameter information.

[0123] As described above, in the embodiment of the present application, the physical model parameters of multiple field limiting ring structures with different ring widths of the field limiting ring are obtained by an acquisition unit, and the original parameter information of the field limiting ring terminal including the ring width and the ring spacing is determined by a determination unit according to the multiple model parameters, so that the theoretical main junction withstand voltage of the field limiting ring terminal is not less than the designed withstand voltage; the field limiting ring terminal is simulated and calculated by a calculation unit according to the original parameter information to obtain the actual withstand voltage value of the field limiting ring terminal, and when the difference between the designed withstand voltage value and the actual withstand voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference meets the design requirements, thereby obtaining the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirements, ensuring that the final parameter information of the field limiting ring terminal structure obtained can meet the designed withstand voltage requirements, thereby ensuring that the device reliability of the obtained field limiting ring terminal is high.

[0124] According to some optional embodiments of the present application, the determining unit includes:

[0125] an acquisition module, configured to acquire a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure according to a plurality of the model parameters, wherein the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing, and the withstand voltage value of the initial main junction, the second functional relationship represents the relationship between the initial ring spacing and the withstand voltage value, the third functional relationship represents the relationship between the initial ring spacing and the residual pressure bearing value, the residual pressure bearing value being the difference between the withstand voltage value and the pressure bearing value of the initial field limiting ring, the initial ring spacing being the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships being different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships being different;

[0126] Specifically, the second functional relationship is a function that characterizes the relationship between the initial ring spacing and the withstand voltage value when the width of the initial field limiting ring is fixed, and the second functional relationship corresponds one-to-one to the width of the initial field limiting ring; the third functional relationship is a function that characterizes the relationship between the initial ring spacing and the residual withstand voltage value when the width of the initial field limiting ring is fixed, and the third functional relationship corresponds one-to-one to the width of the initial field limiting ring.

[0127] A determination module is used to determine the original parameter information according to the first functional relationship, multiple second functional relationships, multiple third functional relationships and the designed withstand voltage value of the main junction.

[0128] In this embodiment, according to the first functional relationship, multiple second functional relationships and multiple third functional relationships, the original parameter information of the field limiting ring structure can be determined based on the designed withstand voltage value of the main junction, so as to further achieve that the theoretical withstand voltage value of the main junction meets the withstand voltage design value, and further ensure that the main junction of the field limiting ring terminal designed according to the original parameter information can theoretically effectively withstand the pressure when subjected to external pressure, thereby further improving the design accuracy of the field limiting ring structure, and facilitating the subsequent optimization of the performance of the field limiting ring structure by adjusting the original parameter information when the actual withstand voltage value does not meet the design requirements; and the present application avoids the problems of blind design and trial and error in the design process of the field limiting ring terminal, and improves the overall efficiency of the field limiting ring terminal design.

[0129] It should be noted that the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing and the withstand voltage value of the initial main junction, which involves parameters of the physical model, such as material properties, geometric dimensions, etc., and is used to describe the electrical characteristics of the field limiting ring structure; the multiple second functional relationships represent the relationship between the initial ring spacing and the withstand voltage value, indicating how the change in the ring spacing affects the withstand voltage capacity of the main junction; the multiple third functional relationships represent the relationship between the initial ring spacing and the pressure bearing value of the initial field limiting ring, indicating how the change in the ring spacing affects the pressure bearing capacity of the field limiting ring.

[0130] According to some further optional embodiments of the present application, the determining module includes:

[0131] A first determination submodule is used to determine, at least according to the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding to the field limiting ring widths one by one, and a withstand voltage range that each field limiting ring region needs to satisfy, wherein the withstand voltage range includes a maximum withstand voltage value and a minimum withstand voltage value, the maximum of the maximum withstand voltage values ​​of the plurality of withstand voltage ranges is not less than the designed withstand voltage value, the widths of the field limiting rings in the same field limiting ring region are all the field limiting ring width corresponding to the field limiting ring region, and the widths of any two field limiting rings are different;

[0132] Specifically, the widths of the field limiting rings in the same field limiting ring region are the same, which are the field limiting ring widths corresponding to the field limiting ring region, while the field limiting ring widths corresponding to different field limiting ring regions are different. The number of field limiting ring widths is the number of field limiting ring regions. The number of field limiting ring regions, the withstand voltage range of each field limiting ring region, and the width of each field limiting ring are obtained through the steps. Among them, the withstand voltage range that the field limiting ring region needs to meet refers to the withstand voltage range that the main junction can reach after at least one field limiting ring is set in the field limiting ring region according to the corresponding field limiting ring width.

[0133] The second determination submodule is used to determine the ring spacings corresponding to the multiple field limiting rings in sequence along the first direction according to the multiple second functional relationships and the multiple third functional relationships, so that the withstand voltage value that can be achieved in each field limiting ring area is not less than the corresponding maximum withstand voltage value, and obtain the original parameter information, the first direction is the direction from the field limiting ring area to the main junction, the ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and the target structure, and the target structure is the field limiting ring or the main junction adjacent to the field limiting ring and located after the field limiting ring along the first direction.

[0134] Specifically, the third functional relationship corresponds one-to-one to the width of the initial field limiting ring. The voltage withstand value that can be achieved by the field limiting ring area refers to the voltage withstand value that the main junction can achieve when the field limiting ring is set in the field limiting ring area according to the ring spacing. The original parameter information may include the number of field limiting ring areas, the width of each field limiting ring and the ring spacing. The original parameter information may also include the number of field limiting ring areas, the voltage withstand range of each field limiting ring area, the width of each field limiting ring and the ring spacing. In the case where multiple field limiting ring areas are located on the left side of the main junction, the first direction is from left to right; in the case where multiple field limiting ring areas are located on the right side of the main junction, the first direction is from right to left. Along the first direction, the multiple field limiting rings are respectively the first field limiting ring, the second field limiting ring, the third field limiting ring, ... the last field limiting ring, and the distance between the first field limiting ring and the second field limiting ring is determined in sequence to obtain the ring spacing corresponding to the first field limiting ring, the distance between the second field limiting ring and the third field limiting ring is determined to obtain the ring spacing corresponding to the second field limiting ring, ..., the distance between the last field limiting ring and the main junction is determined to obtain the ring spacing corresponding to the last field limiting ring.

[0135] In this embodiment, by analyzing the first functional relationship and the designed withstand voltage value, multiple field limiting ring widths, multiple field limiting ring regions corresponding thereto, and withstand voltage ranges that each field limiting ring region needs to meet are determined, thereby ensuring that the maximum withstand voltage value in the multiple withstand voltage ranges is not less than the designed withstand voltage value; and a third functional relationship characterizing the relationship between the initial ring spacing and the residual pressure bearing value is determined according to the second functional relationship and the third functional relationship, and the ring spacing corresponding to the multiple field limiting rings is determined along the first direction through the multiple second functional relationships and the multiple third functional relationships, so that it can be ensured that each field limiting ring region determined according to these ring spacings can reach the corresponding maximum withstand voltage value, thereby obtaining original parameter information including the number of field limiting ring regions, the width of the field limiting ring in each field limiting ring region and the corresponding ring spacing, further ensuring that the theoretical withstand voltage value of the field limiting ring terminal main junction designed according to the original parameter information is not less than the designed withstand voltage value, thereby further achieving the effect of obtaining a field limiting ring terminal that meets the withstand voltage requirement.

[0136] In some further exemplary embodiments of the present application, the second determining submodule is further configured to:

[0137] A first determining step, when the nth field limiting ring is arranged in the mth field limiting ring region and n=1, determining that the withstand voltage value that the nth field limiting ring can reach is the minimum withstand voltage value corresponding to the mth field limiting ring region; when the nth field limiting ring is arranged in the mth field limiting ring region and n≠1, determining, according to the second functional relationship corresponding to the mth field limiting ring region, that the withstand voltage value that the nth field limiting ring can reach is the withstand voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the n-1th field limiting ring, m≥1, n≥1, and the n-1th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction;

[0138] Specifically, when the first field limiting ring is provided in the field limiting ring region, the withstand voltage value that the first field limiting ring can achieve is the minimum withstand voltage value in the withstand voltage range that the field limiting ring region needs to meet. When more than one field limiting ring is provided in the field limiting ring region, the withstand voltage value that the nth field limiting ring can achieve is the withstand voltage value corresponding to when the initial ring spacing in the second functional relationship is equal to the ring spacing between the n-1th field limiting ring and the nth field limiting ring.

[0139] A second determination step, according to the third functional relationship corresponding to the mth field limiting ring area, determining the ring spacing corresponding to the nth field limiting ring as the initial ring spacing corresponding to the case where the residual pressure value is equal to the withstand voltage value that the nth field limiting ring can reach;

[0140] A third determining step, in the case where the withstand voltage value that can be reached by the mth field limiting ring region provided with the nth field limiting ring is less than the maximum withstand voltage value corresponding to the mth field limiting ring region, determining that there is also an n+1th field limiting ring located after the nth field limiting ring along the first direction in the mth field limiting ring region, determining the n+1th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determining step and the second determining step at least once until the withstand voltage value that can be reached by the mth field limiting ring region is not less than the corresponding maximum withstand voltage value;

[0141] A fourth determination step, when m is less than the number of the field limiting ring regions, determining the m+1th field limiting ring region as the new mth field limiting ring region, and cyclically executing the first determination step, the second determination step and the third determination step at least once, until m is greater than or equal to the number of the field limiting ring regions, and the m+1th field limiting ring region is the field limiting ring region located after the mth field limiting ring region along the first direction.

[0142] In the embodiment, the ring spacings between the field limiting rings in each field limiting ring region are determined in sequence along the first direction, so that the voltage withstand value that can be achieved by the field limiting rings arranged according to the ring spacings is not less than the maximum voltage withstand value corresponding to the field limiting ring region, further ensuring that the theoretical voltage withstand value of the main junction at the field limiting ring terminal is not less than the designed voltage withstand value.

[0143] According to some further optional embodiments of the present application, the first functional relationship includes a plurality of arrays, each of the arrays includes the width of the field limiting ring, a plurality of initial ring spacings corresponding to the width of the field limiting ring, and a plurality of the withstand voltage values, the widths of the field limiting rings in any two of the arrays are different, and the first determining submodule is further used for:

[0144] According to the first functional relationship, an array that meets a design goal is selected from the plurality of arrays, and the width of the field limiting ring in each array that meets the design goal is determined to be the field limiting ring width, wherein the design goal includes that the withstand voltage value of the main junction is not less than the designed withstand voltage value, and the area of ​​the field limiting ring terminal is not greater than the designed area value;

[0145] Specifically, there are multiple arrays that meet the design goal, and the number of arrays that meet the design goal is the number of field limiting ring areas. The field limiting rings in the same array have the same width, and in the same array, the field limiting ring width corresponds to multiple different initial ring spacings and multiple different withstand voltage values.

[0146] According to the widths of the plurality of field limiting rings, the number of the field limiting ring regions and the relative positional relationship between the plurality of field limiting ring regions are determined to obtain the first field limiting ring region, the mth field limiting ring region, ..., the pth field limiting ring region arranged in sequence along the first direction, where p is the number of the field limiting ring regions, and 1≤m<p;

[0147] Specifically, the pth field limiting ring region is the field limiting ring region closest to the main junction. The relative position relationship between the plurality of field limiting ring regions can be determined according to the size relationship between the plurality of field limiting ring widths, and the corresponding plurality of field limiting ring regions are arranged in the order of the plurality of field limiting ring widths from small to large along the first direction, that is, the field limiting ring widths corresponding to the first field limiting ring region, the mth field limiting ring region, ..., and the pth field limiting ring region are getting larger and larger.

[0148] Determine that the maximum withstand voltage value corresponding to the p-th field limiting ring region is the designed withstand voltage value, and determine that the minimum withstand voltage value corresponding to the p-th field limiting ring region is the minimum value among the multiple withstand voltage values ​​corresponding to the first field limiting ring width according to the multiple withstand voltage values ​​corresponding to the first field limiting ring width, so as to obtain the withstand voltage range corresponding to the p-th field limiting ring region, wherein the first field limiting ring width is the field limiting ring width corresponding to the p-th field limiting ring region;

[0149] Specifically, the maximum withstand voltage value of the pth field limiting ring region closest to the main junction is the designed withstand voltage value of the main junction; the minimum withstand voltage value of the pth field limiting ring region is the minimum value of multiple withstand voltage values ​​in the array where the first field limiting ring width is located.

[0150] Determine that the maximum withstand voltage value corresponding to the mth field limiting ring area is the minimum withstand voltage value corresponding to the m+1th field limiting ring area, and determine that the minimum withstand voltage value corresponding to the mth field limiting ring area is the minimum value among the multiple withstand voltage values ​​corresponding to the second field limiting ring width according to the multiple withstand voltage values ​​corresponding to the second field limiting ring width, so as to obtain the withstand voltage range corresponding to the mth field limiting ring area, and the second field limiting ring width is the field limiting ring width corresponding to the mth field limiting ring area.

[0151] In the embodiment, an array that meets the design area value and the design withstand voltage value is screened out from an array including the width of the field limiting ring, multiple initial ring spacings, and multiple withstand voltage values, and then the withstand voltage range and the field limiting ring width of each field limiting ring area in the field limiting ring terminal are determined based on the screened array. In this way, the original parameter information of the field limiting ring terminal that takes into account both miniaturization and high resistance can be obtained quickly and efficiently, thereby further ensuring that the parameter determination efficiency and accuracy of the field limiting ring terminal are high.

[0152] According to some other optional schemes of the present application, the calculation unit includes: an adding module, which is used to add at least one new field limiting ring in the field limiting ring terminal when the difference is greater than a preset threshold, to obtain an adjusted field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; and an adjusting module, which is used to adjust the distance between at least part of the field limiting rings when the difference is not greater than the preset threshold, to obtain an adjusted field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement. In the embodiment, when the difference is greater than the preset threshold, it means that the actual withstand voltage value is much smaller than the designed withstand voltage value. At this time, the original parameter information is adjusted by adding a field limiting ring, so that the actual withstand voltage value is quickly improved. When the difference is less than or equal to the preset threshold, it means that the actual withstand voltage value is close to the designed withstand voltage value. At this time, the original parameter information is adjusted by adjusting the ring spacing between the field limiting rings, so that the surprise adjustment of the actual withstand voltage value can be achieved. While further ensuring that the parameter information of the adjusted field limiting ring terminal meets the withstand voltage design requirements, it further ensures that the parameter information of the field limiting ring terminal finally obtained meets the miniaturization requirements. According to the size relationship between the difference and the preset threshold, this embodiment adjusts the original parameter information of the field limiting ring terminal in two stages, so that the difference determined by the adjusted parameter information meets the design requirements, which not only ensures that the design efficiency of the field limiting ring terminal is high, but also further ensures that a field limiting ring terminal that meets the design withstand voltage requirements and miniaturization requirements can be obtained.

[0153] In some further exemplary embodiments of the present application, the adding module includes: a setting submodule, which is used to, when the difference is greater than the preset threshold, use an adjustment principle (hereinafter referred to as rule A) of setting new field limiting rings one by one along the first direction between the main junction and the first field limiting ring to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, wherein the distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information, the first field limiting ring is the field limiting ring closest to the main junction in the original parameter information, the width of the new field limiting ring is determined according to the width of the first field limiting ring, and the ring spacing corresponding to the new field limiting ring is determined according to the minimum line width achievable by the process. In this embodiment, when the actual withstand voltage value is much smaller than the designed withstand voltage value, starting from the side of the main junction close to the first field limiting ring, field limiting rings are added one by one along the first direction from the field limiting ring region to the main junction until the difference is less than or equal to the preset threshold value, which further ensures that the actual withstand voltage value can be increased to be close to or greater than the designed withstand voltage value as soon as possible, thereby further improving the design efficiency of the field limiting ring terminal.

[0154] Further, the width of the new field limiting ring is the width of the first field limiting ring, and the ring spacing corresponding to the new field limiting ring is the minimum line width achievable by the process.

[0155] In some other exemplary embodiments of the present application, the adding module includes: an adjusting submodule, which is used to, when the difference is not greater than the preset threshold, use at least one of the following adjustment principles (hereinafter referred to as rule B) to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal meets the design requirement: starting from the field limiting ring area farthest from the main junction, gradually adjusting the distance between two adjacent field limiting rings located in different field limiting ring areas along a first direction, wherein the first direction is a direction from the field limiting ring area to the main junction; starting from the new field limiting ring farthest from the main junction, gradually adjusting the ring spacing corresponding to the new field limiting ring along the first direction. In this embodiment, when the actual withstand voltage value is close to the designed withstand voltage value, starting from the field limiting ring area farthest from the main junction, the spacing between adjacent field limiting ring areas is gradually adjusted along the first direction, and / or starting from the new field limiting ring farthest from the main junction, the spacing between adjacent new field limiting rings is gradually adjusted along the first direction until the difference meets the design requirement, thereby further ensuring that the parameter information of the adjusted field limiting ring terminal meets the withstand voltage design requirement, and at the same time further ensuring that the parameter information of the field limiting ring terminal finally obtained meets the miniaturization requirement, thereby further achieving the effect of designing a field limiting ring terminal that takes into account both miniaturization and high blocking performance.

[0156] The embodiment can ensure that the structure of the field limiting ring terminal meets the design requirements, and fine adjustment can be performed even when the difference is not greater than the preset threshold. By gradually adjusting the distance between the field limiting rings and the ring spacing, the structure of the field limiting ring terminal can be effectively optimized to ensure its performance and stability within the design requirements. The field limiting ring terminal can be reasonably adjusted according to actual conditions to meet the design requirements.

[0157] It should be noted that the technicians of this application can determine the specific values ​​of the number of field limiting ring areas, the corresponding field limiting ring widths and the ring spacings corresponding to the field limiting rings according to actual needs and the solution of this application.

[0158] Exemplarily, the acquisition unit includes: an establishment module for establishing a plurality of the physical models; a calculation module for performing simulation calculations on the plurality of the physical models to obtain the initial ring spacings, withstand voltage values, and pressure-bearing values ​​corresponding to the widths of the plurality of initial field limiting rings. In this embodiment, by establishing a plurality of physical models and performing simulation calculations on them, the plurality of initial ring spacings, withstand voltage values, and pressure-bearing values ​​corresponding to the widths of the initial field limiting rings can be obtained more accurately, providing more accurate data support for the subsequent establishment of a functional relationship that characterizes the corresponding relationship between these model parameters.

[0159] In some optional schemes of the present application, the acquisition module includes: a first fitting submodule, which is used to fit the widths of multiple initial field limiting rings, the corresponding initial ring spacings and the withstand voltage values ​​by using a data fitting method to obtain the first functional relationship; a second fitting submodule, which is used to fit the multiple initial ring spacings and the withstand voltage values ​​corresponding to the width of each initial field limiting ring by using a data fitting method to obtain the second functional relationship corresponding to the width of each initial field limiting ring; a third fitting submodule, which is used to fit the multiple initial ring spacings and the residual pressure-bearing values ​​corresponding to the width of each initial field limiting ring by using a data fitting method to obtain the third functional relationship corresponding to the width of each initial field limiting ring, and the residual pressure-bearing value is the difference between the withstand voltage value and the pressure-bearing value of the initial field limiting ring. The first functional relationship, the second functional relationship and the third functional relationship are established by the data fitting method, so as to facilitate the subsequent prediction, analysis and optimization of data according to these functional relationships.

[0160] Those skilled in the art may select any suitable data fitting method to process the model parameters to obtain the first functional relationship, the second functional relationship and the third functional relationship. Optionally, the data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multivariate linear regression, exponential function fitting.

[0161] In the embodiment, the data fitting method can determine the values ​​of the model parameters so that the model fits the actual data better. Different data fitting methods can select appropriate fitting functions according to the characteristics of the data and the form of the model, thereby obtaining more accurate parameter estimation results. For example, polynomial fitting is suitable for approximating complex nonlinear relationships, Gaussian fitting is suitable for data with obvious Gaussian distribution characteristics, multivariate linear regression is suitable for the influence of multiple independent variables on the dependent variable, and exponential function fitting is suitable for data that grows or decays exponentially. The parameters determined by the data fitting method can be used to establish a more accurate model to better describe and predict the actual data.

[0162] The parameter determination device of the field limiting loop terminal includes a processor and a memory, wherein the acquisition unit, the determination module, and the calculation module are all stored in the memory as program units, and the processor executes the program units stored in the memory to implement corresponding functions. The modules are all located in the same processor; or, the modules are located in different processors in any combination.

[0163] The processor includes a kernel, which retrieves the corresponding program unit from the memory. One or more kernels can be provided, and the problem that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirement in the prior art can be at least solved by adjusting kernel parameters.

[0164] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0165] An embodiment of the present application further provides a method for preparing a field limiting ring terminal, comprising: determining parameters of the field limiting ring terminal by using any of the methods for determining parameters of the field limiting ring terminal; and preparing the field limiting ring terminal according to the parameters of the field limiting ring terminal.

[0166] In the method for preparing the field limiting ring terminal, the parameter determination method is first used to determine the parameters of the field limiting ring terminal. The determination method first obtains physical model parameters of multiple field limiting ring structures with different ring widths of the field limiting ring, and then determines the original parameter information of the field limiting ring terminal including the ring width and the ring spacing according to the multiple model parameters, so that the theoretical main junction withstand voltage of the field limiting ring terminal is not less than the designed withstand voltage; finally, the field limiting ring terminal is simulated and calculated according to the original parameter information to obtain the actual withstand voltage value of the field limiting ring terminal, and when the difference between the designed withstand voltage value and the actual withstand voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference meets the design requirements, thereby obtaining the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirements, ensuring that the final parameter information of the obtained field limiting ring terminal structure can meet the designed withstand voltage requirements, and then preparing the field limiting ring terminal according to the determined parameters, ensuring that the device reliability of the obtained field limiting ring terminal is high.

[0167] An embodiment of the present invention provides a computer-readable storage medium, wherein the computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute the method for determining parameters of the field limiting loop terminal.

[0168] An embodiment of the present invention provides a processor, which is used to run a program, wherein the method for determining parameters of the field limiting loop terminal is executed when the program is run.

[0169] An embodiment of the present invention provides a device, which includes a processor, a memory, and a program stored in the memory and executable on the processor. When the processor executes the program, the steps of the method for determining parameters of a field limiting loop terminal are implemented.

[0170] The devices in this article can be servers, PCs, PADs, mobile phones, etc.

[0171] The present application also provides a computer program product, including computer instructions, which, when executed by a processor, at least implement the steps of the method for determining parameters of the field limiting loop terminal.

[0172] Obviously, those skilled in the art should understand that the modules or steps of the present invention described above can be implemented by a general-purpose computing device, they can be concentrated on a single computing device, or distributed on a network composed of multiple computing devices, they can be implemented by a program code executable by a computing device, so that they can be stored in a storage device and executed by the computing device, and in some cases, the steps shown or described can be executed in a different order than herein, or they can be made into individual integrated circuit modules, or multiple modules or steps therein can be made into a single integrated circuit module for implementation. Thus, the present invention is not limited to any specific combination of hardware and software.

[0173] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0174] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0175] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0176] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 A step that specifies a function in one or more boxes.

[0177] In a typical configuration, a computing device includes one or more processors (CPU), input / output interfaces, network interfaces, and memory.

[0178] The memory may include non-permanent memory in a computer-readable medium, random access memory (RAM) and / or non-volatile memory in the form of read-only memory (ROM) or flash RAM. The memory is an example of a computer-readable medium.

[0179] Computer readable media include permanent and non-permanent, removable and non-removable media that can be implemented by any method or technology to store information. Information can be computer readable instructions, data structures, program modules or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technology, compact disk read-only memory (CD-ROM), digital versatile disk (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices or any other non-transmission media that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include temporary computer readable media (transitory media), such as modulated data signals and carrier waves.

[0180] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0181] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for determining parameters of a field limiting loop terminal, characterized in that: include: Acquiring model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and the initial field limiting rings corresponding to different field limiting ring structures have different widths; Determine original parameter information according to the plurality of model parameters and the designed withstand voltage value of the main junction, the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and a plurality of field limiting ring regions located on one side of the main junction, the original parameter information includes the width of the field limiting ring in each of the field limiting ring regions and the ring spacing between adjacent field limiting rings; The field limiting ring terminal is simulated and calculated according to the original parameter information to obtain the actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining the final parameter information.

2. The method according to claim 1, characterized in that According to the plurality of model parameters and the designed withstand voltage value of the main junction, original parameter information is determined, including: According to the plurality of model parameters, a first functional relationship, a plurality of second functional relationships and a plurality of third functional relationships of the field limiting ring structure are obtained, wherein the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing and the withstand voltage value of the initial main junction, the second functional relationship represents the relationship between the initial ring spacing and the withstand voltage value, the third functional relationship represents the relationship between the initial ring spacing and the residual pressure bearing value, the residual pressure bearing value is the difference between the withstand voltage value and the pressure bearing value of the initial field limiting ring, the initial ring spacing is the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships are different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships are different; The original parameter information is determined according to the first functional relationship, a plurality of the second functional relationships, a plurality of the third functional relationships, and a designed withstand voltage value of a main junction.

3. The method according to claim 2, characterized in that Determining the original parameter information according to the first functional relationship, a plurality of the second functional relationships, a plurality of the third functional relationships, and a designed withstand voltage value of the main junction includes: At least according to the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding to the field limiting ring widths one by one, and a withstand voltage range that each field limiting ring region needs to satisfy are determined, the withstand voltage range includes a maximum withstand voltage value and a minimum withstand voltage value, the maximum of the maximum withstand voltage values ​​of the plurality of withstand voltage ranges is not less than the designed withstand voltage value, the widths of the field limiting rings in the same field limiting ring region are all the field limiting ring width corresponding to the field limiting ring region, and the widths of any two field limiting rings are different; According to the plurality of the second functional relationships and the plurality of the third functional relationships, the ring spacings corresponding to the plurality of the field limiting rings are determined in sequence along the first direction, so that the withstand voltage value that can be achieved in each field limiting ring region is not less than the corresponding maximum withstand voltage value, and the original parameter information is obtained, the first direction is the direction from the field limiting ring region to the main junction, the ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and a target structure, and the target structure is the field limiting ring or the main junction adjacent to the field limiting ring and located after the field limiting ring along the first direction.

4. The method according to claim 3, characterized in that According to the plurality of the second functional relationships and the plurality of the third functional relationships, the ring spacings corresponding to the plurality of the field limiting rings are sequentially determined along the first direction, so that the withstand voltage value that can be achieved by each of the field limiting ring regions is not less than the corresponding maximum withstand voltage value, including: A first determining step, when the nth field limiting ring is arranged in the mth field limiting ring region and n=1, determining that the withstand voltage value that the nth field limiting ring can reach is the minimum withstand voltage value corresponding to the mth field limiting ring region; when the nth field limiting ring is arranged in the mth field limiting ring region and n≠1, determining, according to the second functional relationship corresponding to the mth field limiting ring region, that the withstand voltage value that the nth field limiting ring can reach is the withstand voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the n-1th field limiting ring, m≥1, n≥1, and the n-1th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction; A second determination step, according to the third functional relationship corresponding to the mth field limiting ring area, determining the ring spacing corresponding to the nth field limiting ring as the initial ring spacing corresponding to the case where the residual pressure value is equal to the withstand voltage value that the nth field limiting ring can reach; A third determining step, in the case where the withstand voltage value that can be reached by the mth field limiting ring region provided with the nth field limiting ring is less than the maximum withstand voltage value corresponding to the mth field limiting ring region, determining that there is also an n+1th field limiting ring located after the nth field limiting ring along the first direction in the mth field limiting ring region, determining the n+1th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determining step and the second determining step at least once until the withstand voltage value that can be reached by the mth field limiting ring region is not less than the corresponding maximum withstand voltage value; A fourth determination step, when m is less than the number of the field limiting ring regions, determining the m+1th field limiting ring region as the new mth field limiting ring region, and cyclically executing the first determination step, the second determination step and the third determination step at least once, until m is greater than or equal to the number of the field limiting ring regions, and the m+1th field limiting ring region is the field limiting ring region located after the mth field limiting ring region along the first direction.

5. The method according to claim 3, characterized in that: The first functional relationship includes a plurality of arrays, each of the arrays includes the width of the field limiting ring, a plurality of initial ring spacings corresponding to the width of the field limiting ring, and a plurality of the withstand voltage values, the widths of the field limiting rings in any two of the arrays are different, and based at least on the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding one-to-one to the field limiting ring widths, and a withstand voltage range that each field limiting ring region needs to meet are determined, including: According to the first functional relationship, an array that meets a design goal is selected from the plurality of arrays, and the width of the field limiting ring in each array that meets the design goal is determined to be the field limiting ring width, wherein the design goal includes that the withstand voltage value of the main junction is not less than the designed withstand voltage value, and the area of ​​the field limiting ring terminal is not greater than the designed area value; According to the widths of the plurality of field limiting rings, the number of the field limiting ring regions and the relative positional relationship between the plurality of field limiting ring regions are determined to obtain the first field limiting ring region, the mth field limiting ring region, ..., the pth field limiting ring region arranged in sequence along the first direction, where p is the number of the field limiting ring regions, and 1≤m<p; Determine that the maximum withstand voltage value corresponding to the p-th field limiting ring region is the designed withstand voltage value, and determine that the minimum withstand voltage value corresponding to the p-th field limiting ring region is the minimum value among the multiple withstand voltage values ​​corresponding to the first field limiting ring width according to the multiple withstand voltage values ​​corresponding to the first field limiting ring width, so as to obtain the withstand voltage range corresponding to the p-th field limiting ring region, wherein the first field limiting ring width is the field limiting ring width corresponding to the p-th field limiting ring region; Determine that the maximum withstand voltage value corresponding to the mth field limiting ring area is the minimum withstand voltage value corresponding to the m+1th field limiting ring area, and determine that the minimum withstand voltage value corresponding to the mth field limiting ring area is the minimum value among the multiple withstand voltage values ​​corresponding to the second field limiting ring width according to the multiple withstand voltage values ​​corresponding to the second field limiting ring width, so as to obtain the withstand voltage range corresponding to the mth field limiting ring area, and the second field limiting ring width is the field limiting ring width corresponding to the mth field limiting ring area.

6. The method according to any one of claims 1 to 5, characterized in that Adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirement includes: In the case where the difference is greater than the preset threshold, at least one new field limiting ring is added to the field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; When the difference is not greater than the preset threshold, the distance between at least part of the field limiting rings is adjusted so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement.

7. The method according to claim 6, characterized in that When the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, including: When the difference is greater than the preset threshold, the structure of the field limiting ring terminal is adjusted by adopting an adjustment principle of setting new field limiting rings one by one along the first direction between the main junction and the first field limiting ring until the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, Among them, the distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information, the first field limiting ring is the field limiting ring closest to the main junction in the original parameter information, the width of the new field limiting ring is determined according to the width of the first field limiting ring, the ring spacing corresponding to the new field limiting ring is determined according to the minimum line width achievable by the process, and the first direction is the direction from the field limiting ring area to the main junction.

8. The method according to claim 6, characterized in that When the difference is not greater than the preset threshold, adjusting the distance between at least part of the field limiting rings so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement, including: When the difference is not greater than the preset threshold, at least one of the following adjustment principles is adopted to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal meets the design requirement: Starting from the field limiting ring region farthest from the main junction, gradually adjusting the distance between two adjacent field limiting rings located in different field limiting ring regions along a first direction, wherein the first direction is a direction from the field limiting ring region to the main junction; Starting from the new field limiting ring farthest from the main junction, the ring spacing corresponding to the new field limiting ring is gradually adjusted along the first direction.

9. The method according to any one of claims 1 to 5, characterized in that Obtain model parameters of the physical model of multiple field limiting ring structures, including: Establishing a plurality of said physical models; Simulation calculations are performed on the multiple physical models to obtain initial ring spacings, withstand voltage values, and pressure-bearing values ​​corresponding to the widths of the multiple initial field limiting rings.

10. The method according to claim 9, characterized in that According to the plurality of model parameters, obtaining a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure comprises: Using a data fitting method to fit the widths of a plurality of the initial field limiting rings, the corresponding initial ring spacings, and the withstand voltage value, to obtain the first functional relationship; Using a data fitting method to fit a plurality of the initial ring spacings and the withstand voltage values ​​corresponding to the width of each initial field limiting ring, to obtain the second functional relationship corresponding to the width of each initial field limiting ring; A data fitting method is used to fit multiple initial ring spacings and residual pressure values ​​corresponding to the width of each initial field limiting ring to obtain the third functional relationship corresponding to the width of each initial field limiting ring. The residual pressure value is the difference between the withstand voltage value and the pressure value of the initial field limiting ring.

11. The method according to claim 10, characterized in that The data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multivariate linear regression, and exponential function fitting.

12. A method for preparing a field limiting ring terminal, characterized in that: include: Determine the parameters of the field limiting loop terminal using the method for determining the parameters of the field limiting loop terminal according to any one of claims 1 to 11; The field limiting ring terminal is prepared according to the parameters of the field limiting ring terminal.

13. A parameter determination device for a field limiting loop terminal, characterized in that: include: an acquisition unit, used to acquire model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and different field limiting ring structures correspond to different initial field limiting ring widths; a determining unit, configured to determine original parameter information according to a plurality of the model parameters and a designed withstand voltage value of the main junction, wherein the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal comprising the main junction and a plurality of field limiting ring regions located at one side of the main junction, and the original parameter information comprising a width of a field limiting ring in each of the field limiting ring regions and a ring spacing between adjacent field limiting rings; A calculation unit is used to perform simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, adjust the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining the final parameter information.

14. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute the method according to any one of claims 1 to 11.

15. An electronic device, characterized in that: include: One or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include methods for executing any one of claims 1 to 11.

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