High-power field effect transistor matching structure, packaging structure and microwave function module

Abstract

The invention provides a high-power field effect transistor matching structure, a packaging structure and a microwave function module. The high-power field effect transistor matching structure comprises a third conductive layer, an insulating layer, a second conductive layer, a first core plate layer and a first conductive layer which are stacked in sequence; wherein the first conducting layer is provided with a first strip-shaped cavity and a second strip-shaped cavity which are communicated with each other, an ohmic impedance line is contained in the first strip-shaped cavity, a quarter-wavelength high-resistance line is contained in the second strip-shaped cavity, and the first end of the ohmic impedance line is connected with the first end of the quarter-wavelength high-resistance line; the second end of the quarter-wavelength high-resistance line is provided with a via hole; the second conductive layer is provided with an isolation hole; a fan-shaped microstrip line is arranged in the third conducting layer, an open circuit end is arranged on the short arc edge of the fan-shaped microstrip line, the open circuit end is connected with a via hole, and the via hole penetrates through the insulating layer, the isolation hole and the first core plate layer in the stacking direction. And meanwhile, the occupied volume of the cavity is smaller.

Description

Technical Field

[0001] The present application relates to the field of high-power microwave millimeter waves, and in particular to a high-power field effect tube matching structure, a packaging structure and a microwave functional module. Background Art

[0002] In the engineering application of field effect tubes, quarter-wavelength lines plus fan-out lines are needed to isolate the RF signal from the feed network. In addition to isolating the signal from the power supply, the quarter-wavelength lines plus fan-out lines also extend the signal input and output signal matching bandwidth. They have been widely used in broadband high-power field effect tube gate and drain power supply feed networks.

[0003] Traditional high-power field effect transistors need to use quarter-wavelength lines plus fan-out lines to isolate signals from power. Figure 1 In the shaded part, the circuit area of ​​the fan-out line is too large. Now the military and civilian fields have increasingly higher requirements for miniaturization and high-integration design. The top-level circuit board area occupied by the fan-out line not only increases the overall size of the component, but also has an adverse effect on the circuit cavity division. Summary of the invention

[0004] In view of this, an embodiment of the present application proposes a high-power field effect transistor matching structure, aiming at a high-power field effect transistor matching structure.

[0005] To achieve the above-mentioned purpose, an embodiment of the present application provides a high-power field effect transistor matching structure, comprising: a third conductive layer, an insulating layer, a second conductive layer, a first core plate layer and a first conductive layer stacked in sequence; wherein the first conductive layer has a first strip cavity and a second strip cavity that are interconnected, wherein the second strip cavity is arranged along a first direction, the first strip cavity is arranged along a second direction, the first direction and the second direction intersect, the first strip cavity accommodates an ohmic impedance line arranged along the first direction, the second strip cavity accommodates a quarter-wavelength high-resistance line arranged along the second direction, the first ends of the ohmic impedance line and the quarter-wavelength high-resistance line are connected to each other, and the second end of the quarter-wavelength high-resistance line is provided with a via hole; the second conductive layer has an isolation hole; a fan-shaped microstrip line is provided in the third conductive layer, the short arc side of the fan-shaped microstrip line is provided with an open end, the open end is connected to the via hole, and the via hole is penetrated in the insulating layer, the isolation hole and the first core plate layer along the stacking direction.

[0006] Optionally, the high-power field effect transistor matching structure further includes:

[0007] A second core plate layer is located on a side of the third conductive layer away from the first conductive layer;

[0008] The fourth conductive layer is located on a side of the second core layer away from the first conductive layer.

[0009] Optionally, the width of the ohmic impedance line is 1 mm to 1.3 mm, and the length of the ohmic impedance line is 15 mm to 23 mm.

[0010] Optionally, the width of the quarter-wavelength high-resistance line is 0.9 mm to 1.2 mm, the length is 5.5 mm to 6.2 mm, and the distance between the first end of the quarter-wavelength high-resistance line and one end of the ohmic impedance line is 3.5 mm to 5 mm.

[0011] Optionally, the first direction and the second direction intersect perpendicularly.

[0012] Optionally, the fan-shaped angle of the fan-shaped microstrip line is 80 degrees to 130 degrees, and the radius of the fan-shaped microstrip line is 2 mm to 3 mm.

[0013] To achieve the above objectives, an embodiment of the present application further provides a high-power field effect transistor packaging structure having a high-power field effect transistor matching structure as described in any of the above embodiments.

[0014] To achieve the above objectives, an embodiment of the present application further provides a high-power microwave functional module having the high-power field effect tube packaging structure described in the above embodiments.

[0015] The embodiment of the present application proposes a high-power field effect tube matching structure, packaging structure and microwave functional module, which are sequentially stacked with a third conductive layer, an insulating layer, a second conductive layer, a first core layer and a first conductive layer; wherein the first conductive layer has a first strip cavity and a second strip cavity that are interconnected, wherein the second strip cavity is arranged along a first direction, the first strip cavity is arranged along a second direction, the first direction and the second direction intersect, the first strip cavity accommodates an ohmic impedance line arranged along the first direction, and the second strip cavity accommodates an ohmic impedance line arranged along the second direction A quarter-wavelength high-resistance line is provided, the first ends of the ohmic impedance line and the quarter-wavelength high-resistance line are connected to each other, and a via is provided at the second end of the quarter-wavelength high-resistance line; the second conductive layer has an isolation hole; a fan-shaped microstrip line is provided in the third conductive layer, and the short arc side of the fan-shaped microstrip line is provided with an open end, and the open end is connected to the via, and the via is provided in the insulating layer, the isolation hole and the first core board layer along the stacking direction. Based on the multilayer board technology, the present invention buries the fan-shaped line in the middle layer or the bottom layer, which can effectively reduce the top layer circuit area, and at the same time, the volume occupied by the cavity is smaller. Compared with the traditional structure and the fan-shaped line buried structure, the latter occupies a significantly reduced circuit area and cavity volume, which is of great help to improve the system integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1It is a schematic diagram of the gate and drain bias circuit of a traditional field effect transistor;

[0017] Figure 2 is a perspective view of a conventional fan-shaped microstrip line circuit and a top view of a fan-shaped microstrip line embedded circuit provided in one embodiment of the present application;

[0018] Figure 3 is a side view of a conventional fan-shaped microstrip line circuit and a top view of a third conductive layer of a fan-shaped microstrip line embedded circuit provided in one embodiment of the present application;

[0019] Figure 4 is a cross-sectional view of a fan-shaped microstrip line embedded circuit provided in one embodiment of the present application;

[0020] Figure 5 It is a simulation result of transmission S parameters of a conventional fan-shaped microstrip line matching circuit provided in one embodiment of the present application;

[0021] Figure 6 It is a simulation result of the transmission S parameter of the embedded fan-shaped microstrip line matching circuit provided in one embodiment of the present application. DETAILED DESCRIPTION

[0022] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. However, it will be appreciated by those skilled in the art that in the present application, many technical details are proposed in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present application can also be implemented. The division of the following embodiments is for the convenience of description, and the specific implementation of the present application should not be construed as any limitation, and the various embodiments can be combined and referenced with each other under the premise of no contradiction.

[0023] refer to Figure 1 and Figure 4The present application provides a high-power field effect transistor matching structure, the high-power field effect transistor matching structure comprising: a third conductive layer 5, an insulating layer 4, a second conductive layer 3, a first core plate layer 2 and a first conductive layer 1 stacked in sequence, wherein the first conductive layer 1 has a first strip-shaped cavity 13 and a second strip-shaped cavity 14 that are interconnected, wherein the second strip-shaped cavity 14 is arranged along a first direction, the first strip-shaped cavity 13 is arranged along a second direction, the first direction and the second direction intersect, the first strip-shaped cavity 13 contains an ohmic impedance line 6 arranged along the first direction, and the second strip-shaped cavity 14 is arranged along a first direction. The shaped cavity 14 accommodates a quarter-wavelength high-resistance line 7 arranged along the second direction, the ohmic impedance line 6 and the first ends of the quarter-wavelength high-resistance line 7 are connected to each other, and the second end of the quarter-wavelength high-resistance line 7 is provided with a via 10; the second conductive layer 3 has an isolation hole 11; the third conductive layer 5 is provided with a fan-shaped microstrip line 12, and the short arc side of the fan-shaped microstrip line 12 is provided with an open end, and the open end is connected to the via 10, and the via 10 is penetrated through the insulating layer 4, the isolation hole 11 and the first core board layer 2 along the stacking direction.

[0024] Specifically, Figure 2 The top view of the traditional fan-shaped microstrip line circuit and the fan-shaped line embedded circuit is shown. It can be seen that the cavity width and length at the bottom of the traditional fan-shaped microstrip line circuit in the left figure are significantly larger than the width and height of the fan-shaped microstrip line 12 embedded circuit in the present application in the right figure. Based on multilayer board technology, the fan-shaped line is embedded in the middle layer or the bottom layer, which can effectively reduce the circuit area of ​​the first conductive layer, that is, the top layer, and the volume occupied by the cavity is smaller. Compared with the traditional structure, the circuit area and cavity volume occupied by the fan-shaped line embedded structure are significantly reduced, which is very helpful to improve the system integration.

[0025] Figure 3 Perspective views of a traditional fan-in-shaped microstrip line circuit and a fan-in-shaped microstrip line embedded circuit of the present application are shown. From the perspective views, it can be seen that the traditional fan-in-shaped microstrip line circuit in the left view is arranged on the top layer, and the fan-in-shaped microstrip line 12 in the fan-in-shaped microstrip line embedded circuit in the right view is located in the third conductive layer 5.

[0026] Figure 4 1 is a cross-sectional view provided in an embodiment of the present application, in which the connection relationship between the ohmic impedance line 6 and the quarter-wavelength high-resistance line 7 of the present application can be shown, and an isolation hole 11 is provided in the second conductive layer on the right. Since the second conductive layer is a metal conductive layer, in order to prevent the via hole 10 from contacting the first isolation hole, the aperture of the first isolation hole 11 is set larger than the aperture of the via hole 10 in the present application.

[0027] It should be noted that the material of the via hole 10 is a conductive metal. The aperture of the via hole 10 can be 0.1 mm to 0.3 mm. Specifically, the aperture of the via hole 10 can be 0.1 mm, 0.2 mm or 0.3 mm. The distance between the center of the via hole 10 and the second end of the quarter-wavelength high-resistance line 7 can be 0.35 mm, and the quarter-wavelength high-resistance line 7 is centered.

[0028] It should also be noted that the present application illustrates a fan-shaped microstrip line embedded circuit structure, and the field effect transistors and other peripheral circuits are consistent with conventional circuits and will not be described in detail here.

[0029] In the embodiment of the present application, the high-power field effect transistor matching structure further includes a second core plate layer 8 and a fourth conductive layer 9, wherein the second core plate layer 8 is located on the side of the third conductive layer 5 away from the first conductive layer 1; the fourth conductive layer 9 is located on the side of the second core plate layer 8 away from the first conductive layer 1. The fourth conductive layer 9 is a grounding layer, and the entire board is clad with copper.

[0030] In an embodiment of the present application, the width of the ohmic impedance line 6 is 1 mm to 1.3 mm, and the length of the ohmic impedance line 6 is 15 mm to 23 mm. Specifically, the width of the ohmic impedance line 6 can be 0.8 mm, 1 mm, 1.1 mm, 1.23 mm, 1.27 mm, 1.3 mm or 1.5 mm, and the length can be 11 mm, 13 mm, 15 mm, 17 mm, 19 mm, 22 mm, 23 mm or 24 mm.

[0031] In the embodiment of the present application, the width of the quarter-wavelength high-resistance line 7 is 0.9 mm to 1.2 mm, the length is 5.5 mm to 6.2 mm, and the distance between the first end of the quarter-wavelength high-resistance line 7 and one end of the ohmic impedance line 6 is 3.5 mm to 5 mm. Specifically, the width of the quarter-wavelength high-resistance line 7 can be 0.7 mm, 0.9 mm, 1.1 mm, 1.2 mm or 1.3 mm.

[0032] In an embodiment of the present application, the first direction and the second direction intersect perpendicularly.

[0033] In an embodiment of the present application, the fan-shaped microstrip line 12 has a fan-shaped angle of 80 to 130 degrees, and a radius of 2 to 3 mm. Specifically, the fan-shaped microstrip line 12 may have a fan-shaped angle of 70, 80, 90, 100, 120 or 130 degrees, and a radius of 1 mm, 2 mm, 3 mm or 4 mm.

[0034] Table 1 shows the specific stack-up structure of the PCB circuit board and the thickness of each layer.

[0035] A stacked structure

[0036] First conductive layer copper 0.036mm First core layer TSM-DS3 0.508mm Second conductive layer copper 0.018mm Insulation layer FR-28-0040-50 0.238mm The third conductive layer copper 0.018mm Second core layer TSM-DS3 0.508mm Fourth conductive layer copper 0.036mm

[0037] refer to Figure 1 - Figure 5 , wherein the ohmic impedance line 6 is a 50 ohm impedance line, with a width of 1.27 mm and a length of 19 mm. The width of the quarter-wavelength high-resistance line 7 is 1.08 mm and the length is 5.85 mm. The quarter-wavelength high-resistance line 7 is 4.3 mm away from the edge of the PCB printed board. The radius of the via 10 is 0.2 mm and the distance from the edge of the quarter-wavelength high-resistance line 7 is 0.35 mm. The via 10 is centered on the left and right.

[0038] The second conductive layer is a reference ground layer, which includes an isolation hole 11 in addition to the via hole 10. The isolation hole 11 has a radius of 0.35 mm and is concentric with the via hole 10.

[0039] The third conductive layer is the layer where the fan-shaped microstrip line 12 is located. It should be pointed out that this is just an example. In fact, the layer where the fan-shaped microstrip line 12 is located (except the top layer) can be adjusted as needed. The purpose of this design is to reduce the size of the first conductive layer circuit and reduce the cavity volume. The width of the PCB printed board can be 20mm and the length can be 20mm, which can be adjusted as needed. The angle of the fan-shaped microstrip line 12 can be 120°. The dimension of the fan-shaped microstrip line 12 from the boundary of the PCB printed board can be 4.4mm, and the length of the fan-shaped microstrip line 12 can be 2.5mm.

[0040] The fourth conductive layer has no special pattern and the entire board is covered with copper.

[0041] The first strip-shaped cavity 13 may have a length of 5 mm and a width of 4 mm, and the second strip-shaped cavity 14 may have a length of 20 mm and a width of 4 mm.

[0042] like Figure 5 and 6 It can be seen from the simulation results that the transmission S parameter performance of the fan-shaped microstrip line 12 is comparable to that of the traditional fan-shaped microstrip line 12, but its volume has a significant advantage.

[0043] On the basis of the above embodiments, the embodiments of the present application further provide a high-power field effect transistor packaging structure having a high-power field effect transistor matching structure as described in any of the above embodiments.

[0044] Based on the above embodiments, the embodiments of the present application further provide a high-power microwave functional module having the high-power field effect tube packaging structure described in the above embodiments.

[0045] Those skilled in the art will appreciate that the above embodiments are specific embodiments for implementing the present application, and in actual applications, various changes may be made thereto in form and detail without departing from the spirit and scope of the present application.

Claims

1. A high-power field effect tube matching structure, characterized in that: include: A PCB circuit board, wherein the PCB circuit board comprises a third conductive layer, an insulating layer, a second conductive layer, a first core layer and a first conductive layer stacked in sequence; Wherein, the first conductive layer has a first strip-shaped cavity and a second strip-shaped cavity which are interconnected, the second strip-shaped cavity is arranged along a first direction, the first strip-shaped cavity is arranged along a second direction, the first direction and the second direction intersect, the first strip-shaped cavity accommodates an ohmic impedance line arranged along the first direction, the second strip-shaped cavity accommodates a quarter-wavelength high-resistance line arranged along the second direction, the first ends of the ohmic impedance line and the quarter-wavelength high-resistance line are connected to each other, and the second end of the quarter-wavelength high-resistance line is provided with a via hole; The second conductive layer has an isolation hole; A fan-shaped microstrip line is provided in the third conductive layer, and an open end is provided at a short arc side of the fan-shaped microstrip line. The open end is connected to the via hole, and the via hole is provided through the insulating layer, the isolation hole and the first core board layer along the stacking direction.

2. The high-power field effect tube matching structure according to claim 1, characterized in that: The PCB circuit board also includes: A second core plate layer is located on a side of the third conductive layer away from the first conductive layer; The fourth conductive layer is located on a side of the second core layer away from the first conductive layer.

3. The high-power field effect tube matching structure according to claim 1, characterized in that: The width of the ohmic impedance line is 1 mm to 1.3 mm, and the length of the ohmic impedance line is 15 mm to 23 mm.

4. The high-power field effect tube matching structure according to claim 1, characterized in that: The width of the quarter-wavelength high-resistance line is 0.9 mm to 1.2 mm, the length is 5.5 mm to 6.2 mm, and the distance between the first end of the quarter-wavelength high-resistance line and one end of the ohmic impedance line is 3.5 mm to 5 mm.

5. The high-power field effect tube matching structure according to claim 1, characterized in that: The first direction and the second direction intersect perpendicularly.

6. The high-power field effect transistor matching structure according to claim 1, characterized in that: The fan-shaped microstrip line has a fan-shaped angle of 80 degrees to 130 degrees, and a radius of 2 mm to 3 mm.

7. A high-power field effect tube packaging structure, characterized in that: A high-power field effect tube matching structure as claimed in any one of claims 1 to 6.

8. A high-power microwave functional module, characterized in that: A high-power field effect tube packaging structure as claimed in claim 7.

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