Reconfigurable transistor and method for modulation based on TENG and UV light

Abstract

The invention relates to the technical field of reconfigurable transistors, in particular to a reconfigurable transistor for modulation based on TENG and UV light and a method. The invention provides a reconfigurable transistor for modulation based on TENG and UV light. The reconfigurable transistor comprises a transistor assembly, a TENG assembly and a UV light assembly. According to the invention, the TENG and the transistor are coupled, the UV light is introduced for cooperation, the TENG is utilized to initiate charge movement, the UV light is cooperated to generate a photoelectric reaction on the transistor, and the type and concentration of carriers are regulated and controlled so as to realize modulation of the channel layer, and the method has good regulation and control characteristics. The reconfigurable transistor solves the problem that the polarity of an existing reconfigurable transistor is not easy to regulate and control.

Description

Technical Field

[0001] The present invention relates to the technical field of reconfigurable transistors, and in particular to: 1. A reconfigurable transistor modulated based on a TENG (i.e., a friction nanogenerator) and UV light; 2. A method for modulating the reconfigurable transistor. Background Art

[0002] As the size of silicon-based transistors approaches the physical limit, semiconductor technology with new concepts and new materials has become the focus. In order to improve information processing performance, it is necessary to develop electronic devices based on new physical principles.

[0003] Two-dimensional van der Waals materials have become a research hotspot due to their atomically thin thickness, dangling bond-free surface, flexible band structure, and compatibility with silicon. Reconfigurable electronic devices based on these materials can achieve reversible operation of device polarity through external electrostatic fields, charge trapping, and ferroelectric polarization, showing great potential in logic and neuromorphic applications. However, the additional power consumption caused by external electrostatic fields and the depolarization field and high gate leakage current caused by ferroelectric polarization are still challenges that need to be addressed. In other words, existing reconfigurable transistors still have the problem of difficult polarity control.

[0004] In addition, although field-effect transistor technology is quite mature, transistors manufactured based on this technology lack a mechanism that enables the external environment to directly act and interact with electronic devices. Summary of the invention

[0005] In order to solve the problem that the polarity of existing reconfigurable transistors is difficult to control, the present invention provides a reconfigurable transistor and a method based on TENG and UV light modulation.

[0006] The present invention is implemented by the following technical solutions:

[0007] In a first aspect, the present invention discloses a reconfigurable transistor based on TENG and UV light modulation, comprising: a transistor component, a TENG component, and a UV light component.

[0008] The transistor assembly includes: a conductive substrate, a gate insulating layer, an h-BN layer, a channel layer, a drain, and a source. The conductive substrate, the gate insulating layer, the h-BN layer, and the channel layer are stacked in sequence. The conductive substrate serves as a gate. The drain and the source are connected to the side of the channel layer facing away from the h-BN layer and are separated from each other. The drain and the source have a potential difference. The channel layer is a bipolar material.

[0009] The TENG component is used to control the flow of electrons applied to the gate and source. The TENG component includes: a static friction layer and a dynamic friction layer. The static friction layer is electrically connected to the conductive substrate. The dynamic friction layer is electrically connected to the source. The static friction layer and the dynamic friction layer have different electron binding capabilities. The dynamic friction layer is used to move under the action of an external force to change the distance between the dynamic friction layer and the static friction layer.

[0010] The UV light component includes a UV light generator, which is used to work with the TENG component and irradiate the channel layer with UV light to modulate it into P-type or N-type.

[0011] The implementation of the reconfigurable transistor based on TENG and UV light modulation is according to the method or process of an embodiment of the present disclosure.

[0012] In a second aspect, the present invention discloses a polarity modulation method, which is applied to the reconfigurable transistor based on TENG and UV light modulation as disclosed in the first aspect.

[0013] A polar modulation method comprises the following steps:

[0014] Step 1, firstly make the dynamic friction layer contact with the static friction layer by external force, then move the dynamic friction layer to a position D0 away from the static friction layer, and then short-circuit the dynamic friction layer and the static friction layer to achieve positive and negative charge balance; wherein D0 represents the balance distance;

[0015] Step 2, grounding the source electrode, keeping the static friction layer and the dynamic friction layer at a distance of D0, so that no voltage is applied to the gate and no electrons move between the source electrode and the dynamic friction layer;

[0016] Step 3: Use external force to move the dynamic friction layer away from or close to the static friction layer, and turn on the UV light generator to irradiate the channel layer with UV light until the target modulation requirement is met.

[0017] The implementation of this polar modulation method is a method or process according to an embodiment of the present disclosure.

[0018] The present invention has the following beneficial effects:

[0019] 1. The present invention provides a reconfigurable transistor based on TENG and UV light modulation, which couples TENG and transistor and introduces UV light for coordination. TENG is used to induce charge movement and UV light is used to produce photoelectric reaction on the transistor, and the carrier type and concentration are regulated to achieve modulation of the channel layer, and has good regulation characteristics.

[0020] 2. During modulation, the present invention utilizes the electrostatic potential generated by TENG to form a voltage applied to the gate, replacing the power supply voltage applied to the gate in the existing field-effect transistor, and realizing direct interaction between external movement and electronic devices.

[0021] 3. The structure of the present invention has low processing difficulty, is easy to manufacture and integrate, and has an optimistic market prospect. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0023] Figure 1 A schematic diagram of the structure of a reconfigurable transistor based on TENG and UV light modulation provided in Example 1 of the present invention;

[0024] Figure 2 A schematic diagram of a process of application example 1 of the polarity modulation method provided in embodiment 2 of the present invention;

[0025] Figure 3 for Figure 2 The corresponding transfer characteristic curve after the channel layer is modulated into P type;

[0026] Figure 4 A schematic diagram of a process of application example 2 of the polarity modulation method provided in embodiment 2 of the present invention;

[0027] Figure 5 for Figure 4 The corresponding reconstructed transfer characteristic curve after the channel layer is modulated into N-type.

[0028] In the accompanying drawings, the components represented by the reference numerals are listed as follows:

[0029] 10. Conductive substrate; 20. Gate insulation layer; 31. h-BN layer; 32. Channel layer; 33. Drain; 34. Source; 40. TENG component; 41. Static friction layer; 42. Dynamic friction layer; 43. Conductive layer 2; 50. External power supply. DETAILED DESCRIPTION

[0030] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0031] Example 1

[0032] See also Figure 1 , this embodiment 1 provides a schematic structural diagram of a reconfigurable transistor based on TENG and UV light modulation, which includes: a transistor component, a TENG component 40, and a UV light component (not shown).

[0033] 1. The transistor assembly is the overall object of modulation, which includes: a conductive substrate 10, a gate insulating layer 20, an h-BN layer 31, a channel layer 32, a drain (i.e. Figure 1 D) 33, source (i.e. Figure 1 S)34.

[0034] The conductive substrate 10, the gate insulating layer 20, the h-BN layer 31 and the channel layer 32 are stacked in sequence. The interface between the gate insulating layer 20 and the h-BN layer 31 can be excited by UV light to produce defect states.

[0035] The conductive substrate 10 serves as a gate (i.e. Figure 1 The drain electrode 33 and the source electrode 34 are connected to the side of the channel layer 32 facing away from the h-BN layer 31 and are separated from each other. It should be noted that the drain electrode 33 and the source electrode 34 form an ohmic contact with the channel layer 32.

[0036] The drain 33 and the source 34 have a potential difference (generally achieved by connecting to an external power supply 50, which serves as a working power supply for the drain 33 and the source 34. The specific connection method can be set as: the drain 33 is electrically connected to the positive pole of the external power supply 50, and the source 34 is electrically connected to the negative pole of the external power supply 50).

[0037] The channel layer 32 is a specific object of modulation. The channel layer 32 is a bipolar material that can undergo a photoelectric reaction with UV light, absorb ultraviolet photons, and thereby generate a large number of photoexcited electron-hole pairs.

[0038] For the above components, the conductive substrate 10 can be made of common conductive materials such as silicon, copper, and aluminum. The gate insulating layer 20 can be made of insulating materials such as silicon dioxide, hafnium oxide, and aluminum oxide; the channel layer 32 can be made of bipolar materials such as molybdenum telluride, black phosphorus, and tungsten selenide; the h-BN layer 31 is made of hexagonal boron nitride; the drain 33 and the source 34 can be made of metal materials, such as one or more alloys of chromium, gold, aluminum, titanium, and palladium.

[0039] 2. The TENG component 40 is used to regulate the flow direction of electrons applied to the gate and source 34.

[0040] The TENG component 40 includes a static friction layer 41 and a dynamic friction layer 42. The static friction layer 41 is electrically connected to the conductive substrate 10. The dynamic friction layer 42 is electrically connected to the source electrode 34. The dynamic friction layer 42 is used to move under the action of an external force to change the distance between the dynamic friction layer 42 and the static friction layer 41.

[0041] The static friction layer 41 and the dynamic friction layer 42 have different electron binding capabilities; it should be noted that the greater the difference in the electron binding capabilities between the two, the better.

[0042] Considering the working principle of the TENG component 40, there are several ways to connect it with the transistor component:

[0043] 201. If the static friction layer 41 is made of a conductive material, it is disposed on a side of the conductive substrate 10 facing away from the gate insulating layer 20, so that the static friction layer 41 and the conductive substrate 10 directly form a contact-type electrical connection.

[0044] If the static friction layer 41 is an insulating material, a conductive layer 1 is provided on the side facing the conductive substrate 10; the conductive layer 1 is electrically connected to the conductive substrate 10 (the conductive layer 1 can be directly attached to the conductive substrate 10), so that the static friction layer 41 is electrically connected to the conductive substrate 10 by utilizing the conductive layer 1.

[0045] 202. If the dynamic friction layer 42 is an insulating material, a second conductive layer 43 is provided on the side facing away from the static friction layer 41; the second conductive layer 43 is electrically connected to the source electrode 34 (the second conductive layer 43 can be connected to the source electrode 34 through a wire), so that the dynamic friction layer 42 and the source electrode 34 are electrically connected through the second conductive layer 43.

[0046] If the dynamic friction layer 42 is made of a conductive material, there is no need to provide the second conductive layer 43 , and the dynamic friction layer 42 can be connected to the source electrode 34 through a wire to form an electrical connection between the dynamic friction layer 42 and the source electrode 34 .

[0047] Of course, considering the stability of the dynamic friction layer 42, an insulating base may be further provided to support the dynamic friction layer 42. If the dynamic friction layer 42 is made of insulating material, the side of the conductive layer 43 facing away from the dynamic friction layer 42 is connected to the insulating base; if the dynamic friction layer 42 is made of conductive material, the side of the dynamic friction layer 42 facing away from the static friction layer 41 is connected to the insulating base.

[0048] In this embodiment 1, the TENG component 40 is configured as follows:

[0049] like Figure 1 As shown, the static friction layer 41 is a conductive material, which can be any one of copper, gold, aluminum, and silver; the dynamic friction layer 42 is an insulating material, which can be any one of PTFE, PVDF, Kapton, and nylon; the material of the conductive layer 43 is any one of copper, gold, aluminum, and silver.

[0050] 3. The UV light component includes a UV light generator, which is used to cooperate with the TENG component 40 and irradiate the channel layer 32 with UV light to modulate it into P type or N type.

[0051] The UV light assembly is intended to provide UV light to modulate the channel layer 32 using a photoelectric reaction.

[0052] In general, based on the above structure, there are the following modulation situations:

[0053] A. If the electron binding ability of the static friction layer 41 is smaller than that of the dynamic friction layer 42, when the dynamic friction layer 42 gradually moves away from the static friction layer 41, a positive gate voltage is applied to the gate, and electrons flow from the static friction layer 41 to the source 34, and the channel layer 32 is irradiated by UV light and modulated into P type.

[0054] B. If the electron binding ability of the static friction layer 41 is greater than that of the dynamic friction layer 42, when the dynamic friction layer 42 gradually approaches the static friction layer 41, a positive gate voltage is applied to the gate, and electrons flow from the static friction layer 41 to the source 34, and the channel layer 32 is irradiated by UV light and modulated into P type.

[0055] C. If the electron binding ability of the static friction layer 41 is smaller than that of the dynamic friction layer 42, when the dynamic friction layer 42 gradually approaches the static friction layer 41, a negative gate voltage is applied to the gate, electrons flow from the source 34 to the static friction layer 41, and the channel layer 32 is irradiated by UV light and modulated into N type.

[0056] D. If the electron binding ability of the static friction layer 41 is greater than that of the dynamic friction layer 42, when the dynamic friction layer 42 gradually moves away from the static friction layer 41, a negative gate voltage is applied to the gate, electrons flow from the source 34 to the static friction layer 41, and the channel layer 32 is irradiated by UV light and modulated into N type.

[0057] In A and B, the greater the positive gate voltage is, the deeper the channel layer 32 is modulated into the P type; in C and D, the greater the negative gate voltage is, the deeper the channel layer 32 is modulated into the N type.

[0058] That is to say, the reconfigurable transistor based on TENG and UV light modulation based on the above structure can be modulated according to specific circumstances to adjust the type of the channel layer 32.

[0059] Example 2

[0060] This embodiment 2 discloses a polarity modulation method, which is applied to the reconfigurable transistor based on TENG and UV light modulation disclosed in embodiment 1.

[0061] Specifically, a polarity modulation method includes the following steps:

[0062] Step 1: First, the dynamic friction layer 42 is brought into contact with the static friction layer 41 by an external force, and then the dynamic friction layer 42 is moved to a position D0 away from the static friction layer 41, and then the dynamic friction layer 42 and the static friction layer 41 are short-circuited to achieve a balance between positive and negative charges; wherein D0 represents the balance distance.

[0063] Step 2, grounding the source electrode 34, keeping the static friction layer 41 and the dynamic friction layer 42 at a distance D0, so that no voltage is applied to the gate and no electrons move between the source electrode 34 and the dynamic friction layer 42.

[0064] Step 3: Use external force to move the dynamic friction layer 42 away from or close to the static friction layer 41, and turn on the UV light generator to irradiate the channel layer 32 with UV light until the target modulation requirement is met.

[0065] This step controls the TENG component 40 and the UV light component accordingly according to the four modulation conditions A, B, C, and D recorded in Example 1.

[0066] Of course, after the channel layer 32 reaches the target modulation requirement, a step 4 may be added to turn off the UV light generator and reset the dynamic friction layer 42 to a position D0 away from the static friction layer 41 .

[0067] In order to specifically explain the mechanism by which the channel layer 32 is modulated into the P type or the N type, this embodiment 2 provides two examples: Example 1 and Example 2.

[0068] The reconfigurable transistors based on TENG and UV light modulation in both examples use the following material selections:

[0069] Conductive substrate 10: silicon (Si); gate insulating layer 20: silicon dioxide (SiO2); h-BN layer 31: hexagonal boron nitride (h-BN); channel layer 32: molybdenum telluride (MoTe2); drain electrode 33: chromium-gold alloy; source electrode 34: chromium-gold alloy; static friction layer 41: copper (Cu); dynamic friction layer 42: PTFE; conductive layer 2 43: copper (Cu).

[0070] Example 1

[0071] See also Figure 2 , which shows the process of modulating the channel layer 32 to P type:

[0072] First, the dynamic friction layer 42 is brought into contact with the static friction layer 41 by an external force, and then the dynamic friction layer 42 is moved to a position D0 away from the static friction layer 41, and then the dynamic friction layer 42 and the static friction layer 41 are short-circuited (that is, the dynamic friction layer 42 and the conductive layer 43 are short-circuited) to achieve positive and negative charge balance.

[0073] like Figure 2 As shown in (Ⅰ), the source electrode 34 is grounded, and the static friction layer 41 and the dynamic friction layer 42 are kept at a distance of D0; since the PTFE in the dynamic friction layer 42 and the copper in the static friction layer 41 have different electron binding abilities, the static friction layer 41 is positively charged and the dynamic friction layer 42 is negatively charged; but since the positive and negative charges are bound to each other, it will not affect the transistor components, so no voltage is applied to the gate, and no electrons move between the source electrode 34 and the dynamic friction layer 42.

[0074] like Figure 2As shown in (II), the dynamic friction layer 42 is moved away from the static friction layer 41 by external force, and the two generate a corresponding separation distance +D, and part of the electrons in the conductive substrate 10 move to the static friction layer 41 to neutralize the excess positive charge, so that the conductive substrate 10 is positively charged, which is equivalent to applying a positive gate voltage to the gate; at the same time, the UV light generator is turned on to irradiate the channel layer 32 with UV light; because the channel layer 32 undergoes a photoelectric reaction under the irradiation of UV light to generate a large number of photoexcited electrons (i.e. Figure 2 e)-photogenerated holes (i.e. Figure 2 h) in the pair; and UV light irradiation can excite defect states at the interface of the gate insulating layer 20 and the h-BN layer 31, then the photoexcited electrons will be driven by the electric field perpendicular to the channel layer 32, and then be captured and fixed in the defect state, and act as carriers, thereby modulating the channel layer 32 to P type.

[0075] The greater the positive gate voltage, the more photoexcited electrons are captured and fixed, the greater the concentration of carriers, and the deeper the channel layer 32 is modulated into the P type.

[0076] like Figure 2 As shown in (III), the UV light generator is turned off, and the dynamic friction layer 42 is reset to a position D0 away from the static friction layer 41; after removing the mechanical displacement and the light pulse, the photoexcited electrons captured and fixed in the defect state do not escape, but are still stored in the defect state, forming an effective local negative gate voltage on the channel layer 32, and generating a stable electron doping effect in the channel layer 32, thereby keeping the channel layer 32 P-type.

[0077] See also Figure 3 , which shows the transfer characteristic curve after the channel layer is modulated into P type, which conforms to the characteristics of P type, indicating that the channel layer 32 is modulated into P type.

[0078] Example 2

[0079] See also Figure 4 , which shows the process of modulating the channel layer 32 to N-type:

[0080] First, the dynamic friction layer 42 is brought into contact with the static friction layer 41 by an external force, and then the dynamic friction layer 42 is moved to a position D0 away from the static friction layer 41, and then the dynamic friction layer 42 and the static friction layer 41 are short-circuited (that is, the dynamic friction layer 42 and the conductive layer 43 are short-circuited) to achieve positive and negative charge balance.

[0081] like Figure 4As shown in (Ⅰ), the source electrode 34 is grounded, and the static friction layer 41 and the dynamic friction layer 42 are kept at a distance of D0; since the PTFE in the dynamic friction layer 42 and the copper in the static friction layer 41 have different electron binding abilities, the static friction layer 41 is positively charged and the dynamic friction layer 42 is negatively charged; but since the positive and negative charges are bound to each other, it will not affect the transistor components, so no voltage is applied to the gate, and no electrons move between the source electrode 34 and the dynamic friction layer 42.

[0082] like Figure 4 As shown in (II), the dynamic friction layer 42 is brought close to the static friction layer 41 by external force, and the two generate a corresponding approach distance -D, and part of the electrons in the static friction layer 41 move to the conductive substrate 10, so that the conductive substrate 10 is negatively charged, which is equivalent to applying a negative gate voltage to the gate; at the same time, the UV light generator is turned on to irradiate the channel layer 32 with UV light; because the channel layer 32 undergoes a photoelectric reaction under the irradiation of UV light to generate a large number of photoexcited electrons (i.e. Figure 4 e)-photogenerated holes (i.e. Figure 4 h) in the pair; and UV light irradiation can excite defect states at the interface of the gate insulating layer 20 and the h-BN layer 31, then the photogenerated holes will be driven by the electric field perpendicular to the channel layer 32, and then be captured and fixed in the defect state, and act as carriers, thus modulating the channel layer 32 to N-type.

[0083] The greater the negative gate voltage is, the more photogenerated holes are captured and fixed, the greater the concentration of carriers is, and the deeper the channel layer 32 is modulated into the N-type.

[0084] like Figure 4 As shown in (III), the UV light generator is turned off, and the dynamic friction layer 42 is reset to a position D0 away from the static friction layer 41; after removing the mechanical displacement and the light pulse, the photogenerated holes captured and fixed in the defect state do not escape, but are still stored in the defect state, forming an effective local positive gate voltage on the channel layer 32, and generating a stable electron doping effect in the channel layer 32, thereby keeping the channel layer 32 N-type.

[0085] See also Figure 5 , which shows the transfer characteristic curve after the channel layer 32 is modulated into N-type, which conforms to the characteristics of N-type, indicating that the channel layer 32 is modulated into N-type.

[0086] Example 3

[0087] This embodiment 3 discloses a computer device, including a memory and a processor. The memory stores a computer program, and the processor implements the steps of the polarity modulation method disclosed in embodiment 2 when executing the computer program.

[0088] This embodiment 3 also discloses a readable storage medium, in which computer program instructions are stored. When the computer program instructions are read and executed by a processor, the steps of the polarity modulation method disclosed in embodiment 2 are executed.

[0089] This embodiment 3 also discloses a computer program product, including a computer program. When the computer program is executed by a processor, the steps of the polarity modulation method disclosed in the embodiment 2 are implemented.

[0090] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A reconfigurable transistor based on TENG and UV light modulation, characterized in that: include: A transistor component, comprising: a conductive substrate, a gate insulating layer, an h-BN layer, a channel layer, a drain electrode, and a source electrode; the conductive substrate, the gate insulating layer, the h-BN layer, and the channel layer are stacked in sequence; the conductive substrate serves as a gate electrode; the drain electrode and the source electrode are connected to a side of the channel layer facing away from the h-BN layer and are separated from each other; the drain electrode and the source electrode have a potential difference; and the channel layer is a bipolar material; TENG component, which is used to regulate the voltage applied to the gate and the electron flow direction of the source; the TENG component includes: a static friction layer and a dynamic friction layer; the static friction layer is electrically connected to the conductive substrate; the dynamic friction layer is electrically connected to the source; the static friction layer and the dynamic friction layer have different electron binding abilities; the dynamic friction layer is used to move under the action of an external force to change the distance between the dynamic friction layer and the static friction layer; as well as The UV light component includes a UV light generator, which is used to cooperate with the TENG component and irradiate the channel layer with UV light to modulate it into P type or N type.

2. The reconfigurable transistor based on TENG and UV light modulation according to claim 1 is characterized in that: If the electron binding capacity of the static friction layer is smaller than that of the dynamic friction layer, when the dynamic friction layer gradually moves away from the static friction layer, a positive gate voltage is applied to the gate, electrons flow from the static friction layer to the source, and the channel layer is irradiated by UV light and modulated into a P type; If the electron binding capacity of the static friction layer is greater than that of the dynamic friction layer, when the dynamic friction layer gradually approaches the static friction layer, a positive gate voltage is applied to the gate, electrons flow from the static friction layer to the source, and the channel layer is irradiated by UV light and modulated into a P type; Among them, the larger the positive gate voltage is, the deeper the channel layer is modulated into P type.

3. The reconfigurable transistor based on TENG and UV light modulation according to claim 1 is characterized in that: If the electron binding capacity of the static friction layer is smaller than that of the dynamic friction layer, when the dynamic friction layer gradually approaches the static friction layer, a negative gate voltage is applied to the gate, electrons flow from the source to the static friction layer, and the channel layer is irradiated by UV light and modulated into N-type; If the electron binding capacity of the static friction layer is greater than that of the dynamic friction layer, when the dynamic friction layer gradually moves away from the static friction layer, a negative gate voltage is applied to the gate, electrons flow from the source to the static friction layer, and the channel layer is irradiated by UV light and modulated into N-type; Among them, the greater the negative gate voltage is, the deeper the channel layer is modulated into N-type.

4. The reconfigurable transistor based on TENG and UV light modulation according to claim 1, characterized in that: The static friction layer is a conductive material, and is arranged on a side of the conductive substrate facing away from the gate insulation layer; Alternatively, the static friction layer is an insulating material, and a conductive layer 1 is disposed on a side of the static friction layer facing the conductive substrate; the conductive layer 1 is electrically connected to the conductive substrate.

5. The reconfigurable transistor based on TENG and UV light modulation according to claim 1, characterized in that: The dynamic friction layer is made of insulating material, and a second conductive layer is disposed on a side of the dynamic friction layer facing away from the static friction layer; the second conductive layer is electrically connected to the source electrode; Alternatively, the dynamic friction layer is a conductive material.

6. The reconfigurable transistor based on TENG and UV light modulation according to claim 5, characterized in that: The TENG component further includes: an insulating substrate; the insulating substrate is used to support the dynamic friction layer; If the dynamic friction layer is made of insulating material, the side of the conductive layer 2 facing away from the dynamic friction layer is connected to the insulating substrate; If the dynamic friction layer is made of a conductive material, a surface of the dynamic friction layer facing away from the static friction layer is connected to an insulating substrate.

7. The reconfigurable transistor based on TENG and UV light modulation according to claim 1, characterized in that: The drain is electrically connected to the positive electrode of the external power source, and the source is electrically connected to the negative electrode of the external power source.

8. The reconfigurable transistor based on TENG and UV light modulation according to claim 1, characterized in that: The conductive substrate is made of any one of silicon, copper and aluminum; Or / and, the material of the gate insulating layer is any one of silicon dioxide, hafnium oxide and aluminum oxide; Or / and, the material of the channel layer is any one of molybdenum telluride, black phosphorus, and tungsten selenide; Or / and, the materials of the drain electrode and the source electrode are one or more alloys of chromium, gold, and silver; Or / and, the material of the static friction layer is any one of copper, gold, aluminum, and silver; the material of the dynamic friction layer is any one of PTFE, PVDF, Kapton, and nylon.

9. A polarity modulation method, characterized in that: A reconfigurable transistor based on TENG and UV light modulation as described in any one of claims 1 to 8; The polarity modulation method comprises the following steps: Step 1, firstly make the dynamic friction layer contact with the static friction layer by external force, then move the dynamic friction layer to a position D0 away from the static friction layer, and then short-circuit the dynamic friction layer and the static friction layer to achieve positive and negative charge balance; wherein D0 represents the balance distance; Step 2, grounding the source electrode, keeping the static friction layer and the dynamic friction layer at a distance of D0, so that no voltage is applied to the gate and no electrons move between the source electrode and the dynamic friction layer; Step 3: Use external force to move the dynamic friction layer away from or close to the static friction layer, and turn on the UV light generator to irradiate the channel layer with UV light until the target modulation requirement is met.

10. The polar modulation method according to claim 9, characterized in that: Also includes: Step 4, turning off the UV light generator and resetting the dynamic friction layer to a position D0 away from the static friction layer.

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