Diamond wafer processing device and processing method

Abstract

The invention discloses a processing device for a diamond wafer. The processing device comprises a laser beam for processing the wafer and a main body mounting assembly, a fixing unit capable of being connected with a wafer is arranged on the main body mounting assembly; the main body mounting assembly comprises a main body rotating unit which is connected with the fixing unit and drives the fixing unit to rotate; when the fixing unit is connected with the wafer, the main body rotating unit can synchronously drive the fixing unit and the wafer to rotate. By arranging the main body rotating unit, the wafer can be driven to rotate, so that the wafer does not need to be cut in a one-time penetrating manner from top to bottom, and the wafer can be rotated to realize multi-surface cutting; the main body rotating unit drives the wafer to rotate, so that the wafer can be subjected to multi-surface cutting, the cutting amount is reduced, the material loss of diamond in the cutting process is reduced, and meanwhile, the cutting efficiency can be improved.

Description

Technical Field

[0001] The invention relates to the technical field of diamond processing, and in particular to a processing device and a processing method for a diamond wafer. Background Art

[0002] The existing technology adopts a top-down cutting method. Due to the divergent characteristics of the light path and the accumulation of thermal effects, this processing method has the following problems to be solved: the thickness of the chip after cutting is uneven, the slit is wide, the opening is large, the material loss is large, and it takes a long time.

[0003] For example, the publication number "CN118385783A" discloses "a diamond composite sheet cutting device with a stable structure", including a cutting calibration mechanism and a switching motor inside the cutting calibration mechanism, wherein a fixed adjustment mechanism is provided at the bottom of the cutting calibration mechanism, and an adjustment motor is provided inside the fixed adjustment mechanism, wherein the cutting calibration mechanism includes a fixed top plate, a motor cover is fixedly installed on the top of the fixed top plate, a lifting motor is fixedly installed on one side of the motor cover, and a first sprocket transmission assembly is fixedly connected to the output end of the lifting motor, wherein a lifting threaded rod is symmetrically connected to the bottom of the first sprocket transmission assembly. However, in actual applications, since laser cutting will produce a tapered cutting path, the method of cutting from top to bottom will produce a larger tapered cutting path, and in order to obtain a smooth cutting surface in the later stage, more diamond material will be wasted, and the processing time will be longer. Summary of the invention

[0004] In view of the problems in the prior art mentioned in the background technology that the cutting path is too wide, resulting in waste of consumables and long processing time, the present invention provides a processing device for diamond wafers, which can reduce the loss of diamond material during the cutting process and improve the cutting efficiency.

[0005] To achieve the above objectives, the present invention adopts the following technical solutions.

[0006] A diamond wafer processing device, comprising: a laser beam and body mounting assembly for processing wafers; The main body mounting assembly is provided with a fixing unit capable of connecting with a wafer; The main body installation assembly includes a main body rotating unit connected to the fixing unit and driving the fixing unit to rotate; When the fixing unit is connected to the wafer, the main body rotating unit can synchronously drive the fixing unit and the wafer to rotate.

[0007] By setting up a main rotating unit, the wafer can be driven to rotate, so that the wafer does not need to be cut from top to bottom in a one-time through-cutting manner, and the wafer can be rotated to achieve multi-sided cutting; in the prior art, due to the characteristics of the laser beam, the laser shape is conical, and during the cutting process, it not only feeds vertically but also expands horizontally to form a conical cutting path; therefore, the wafer is driven to rotate by the main rotating unit, so that the wafer can be cut on multiple sides, reducing the cutting amount, reducing the material loss of diamond during the cutting process, and at the same time improving the cutting efficiency.

[0008] Preferably, a shedding adsorption unit is further included, and the shedding adsorption unit is arranged on the opposite side of the fixing unit, and the shedding adsorption unit can adsorb the shedding part of the wafer after being cut. The shedding adsorption unit is arranged on the opposite side of the fixing unit, and the shedding adsorption unit can adsorb the shedding part of the wafer, thereby preventing the wafer from falling off at the moment of separation, and at the same time can fix the shedding part of the wafer, which is convenient for subsequent trimming.

[0009] Preferably, the shedding adsorption unit is connected to a shedding deflection unit, which can drive the shedding part of the wafer to deflect relative to the laser beam. The shedding deflection unit can drive the shedding part of the wafer to deflect, so that after cutting is completed, the cutting surface of the wafer to be trimmed is kept parallel to the conical bevel of the laser beam, so that a flat cutting surface can be trimmed.

[0010] Preferably, a lower material bin is provided below the shedding adsorption unit, and the shedding parts after trimming are collected through the lower material bin.

[0011] Preferably, the main body rotation unit includes a main body deflection unit, and the main body deflection unit can drive the wafer to deflect relative to the laser beam. The main body deflection unit can drive the main body of the wafer to deflect, so that after cutting is completed, the cut surface of the wafer to be trimmed is kept parallel to the conical bevel of the laser beam, so that a flat cut surface can be trimmed, and then the adsorption stability of the subsequent shedding adsorption unit on the cut surface can be improved.

[0012] Preferably, the main body rotating unit includes a main body rotating unit, and the main body rotating unit can drive the wafer to rotate to change the cut surface of the wafer. The main body rotating unit drives the wafer to rotate, thereby changing the cut side of the wafer, achieving cutting effects in different directions and improving cutting quality.

[0013] A processing method comprises the following steps: S1, the laser beam cuts the wafer connected to the fixed unit and stops after cutting to the middle area of ​​the wafer; S2, the main body rotating unit drives the wafer to rotate so that the opposite side of the processed surface in step S1 faces the laser beam to complete the cutting of the remaining depth; S3, the falling off adsorption unit adsorbs the falling off part of the wafer in step S2; S4, the laser beam trims the detached part of the wafer and the main part connected to the fixed unit respectively. In the present application, the above-mentioned processing method can reduce the feed depth in a single cutting process, thereby reducing the lateral widening size of the laser beam in the cutting process, thereby reducing the material loss and cutting time of the diamond in the cutting process, and at the same time reducing the diamond material that needs to be trimmed in the trimming process, thereby improving the output value and cutting efficiency; wherein the middle area of ​​the wafer is delineated according to demand during the actual cutting process, and is in the middle of the wafer depth, generally at 0.4-0.6 of the overall depth of the wafer, preferably at 0.5 of the wafer.

[0014] Preferably, in step S4, the detached part and / or the main part of the wafer is deflected until the line connecting the upper and lower ends is parallel to the edge of the laser beam, and the detached part and / or the main part of the wafer is trimmed using the laser beam. By deflecting, the tapered structure of the tapered laser can be adapted, so that the tapered laser beam can still trim a smooth cutting surface.

[0015] Preferably, in step S1, the main body deflection unit drives the wafer to deflect until the processed surface of the wafer faces the laser beam. The deflection of the main body deflection unit can adapt to the wafer placement position of the previous processing step, ensuring the smoothness of wafer transfer.

[0016] Preferably, in step S4, the laser beam first trims the detached part of the wafer, and after the trimming of the detached part is completed, the detached adsorption unit is deflated, and the detached part falls into the lower bin; then the laser beam trims the main part. By first processing the detached part and then processing the main part, the recovery efficiency of the detached part can be improved.

[0017] The beneficial effects of the present invention are as follows: (1) By cutting diamond on multiple sides, the material loss in the cutting process can be reduced, the cutting efficiency can be improved, and the cutting time can be saved; (2) By providing a main body deflection unit and a fall-off deflection unit, a smooth cutting surface can be obtained through a conical laser beam, which is convenient for subsequent processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of Example 1.

[0019] Figure 2 It is a structural schematic diagram of Example 2.

[0020] Figure 3 It is a schematic diagram of cutting the wafer in the present invention.

[0021] Figure 4 It is a schematic diagram of wafer cutting in the prior art.

[0022] Figure 5 It is a flow chart of repairing the fallen-off part in the present invention.

[0023] Figure 6 It is a repair flow chart of the main part in the present invention.

[0024] In the figure: 1 wafer, 11 main body, 12 detached part; 2 laser beams; 3 main body installation assembly, 31 fixing unit, 32 main body rotation unit, 321 main body deflection unit, 322 main body rotation unit; 4 shedding adsorption unit, 41 shedding deflection unit; 5. Lower silo. DETAILED DESCRIPTION

[0025] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments.

[0026] Embodiment 1: like Figure 1 , 2 As shown in , 3, a diamond wafer processing device includes: a laser beam 2 for processing the wafer 1 and a main body mounting assembly 3; the main body mounting assembly 3 is provided with a fixing unit 31 capable of connecting to the wafer 1; the main body mounting assembly 3 includes a main body rotating unit 32 connected to the fixing unit 31 and driving the fixing unit 31 to rotate; when the fixing unit 31 is connected to the wafer 1, the main body rotating unit 32 can synchronously drive the fixing unit 31 and the wafer 1 to rotate.

[0027] By setting up the main rotating unit 32, the chip 1 can be driven to rotate, so that the chip 1 does not need to be cut from top to bottom in a one-time through-cutting manner, and the chip 1 can be rotated to achieve multi-faceted cutting; in the prior art, due to the characteristics of the laser beam 2, the laser shape is conical, and during the cutting process, it not only feeds vertically but also expands horizontally to form a conical cutting path; therefore, the chip 1 is driven to rotate by the main rotating unit 322, so that the chip 1 can be cut on multiple sides, reducing the cutting amount, reducing the material loss of diamond during the cutting process, and at the same time improving the cutting efficiency.

[0028] The assembly and working process of the diamond wafer processing device in this embodiment are as follows: In this embodiment, a main body installation component 3 is included, wherein the main body installation component 3 includes a fixing unit 31 connected to the wafer 1. In this embodiment, the fixing unit 31 on the main body installation component 3 is an adsorption device, which can use negative pressure to adsorb the wafer 1, so that only one side of the wafer 1 is connected, avoiding interference affecting the laser cutting path during the laser processing process; a main body rotation unit 32 is also provided on the main body installation component 3, and the main body rotation unit 32 is connected to the fixing unit 31, wherein the main body rotation unit 32 can drive the fixing unit 31 to rotate. In this embodiment, one side of the wafer 1 adsorbed by the fixing unit 31 is the reverse side, the side opposite to the reverse side is the front side, and the remaining diamond surface is the side surface. In this embodiment, the side surface of the wafer 1 is driven to rotate by the rotation of the main body installation component 3, so that the side surface of the wafer 1 facing the laser beam 2 is changed during the rotation process, so that the laser beam 2 can process different sides of the wafer 1.

[0029] Therefore, the processing method in the present application is as follows: first, the wafer 1 is fixed by the fixing unit 31 so that one of the side surfaces of the wafer 1 is facing the laser beam 2 for processing, and the side surface is the first processing surface. When the processing depth of the laser beam 2 on the wafer 1 reaches half the depth of the entire wafer 1, the processing is stopped, and the rotation of the main rotating unit 32 drives the wafer 1 to change the side facing the laser beam 2, and the side surface facing the first processing surface is rotated to a position facing the laser beam 2, and the side surface is the second side surface. The laser beam 2 continues to process the second side surface until it is cut to half the depth of the wafer 1, and the wafer 1 is cut and separated. In this embodiment, since the cutting step is divided into two parts, two cutting paths are formed on the first processing surface and the second processing surface respectively, and since the feed depth of the two cutting paths is half of the cutting path that directly penetrates from top to bottom, and due to the tapered structure of the cutting path, the tapered structure formed on the first processing surface and the second processing surface The structure is only a small cone, rather than a large cone formed by one cutting. In theory, the structure of the small cone is similar to that of the large cone, and the height of the small cone is half of the height of the large cone. Therefore, the length of the base of the small cone is also half of the length of the base of the large cone. Even if two cuttings are used in this embodiment to form two small cone structures, the sum of the two small cones is only half of the large cone structure. In terms of cutting loss, the cutting method in this embodiment is greatly improved compared with the prior art. Furthermore, since a conical cutting path is formed after cutting, the main body 11 and the detached part 12 formed after the wafer 1 is cut need to be trimmed in the subsequent process to form a flat cutting surface. Therefore, the inclined surface formed after cutting needs to be cut off. In this embodiment, the final part that needs to be cut off is only half of that in the prior art under ideal conditions. Therefore, in terms of processing efficiency, the cutting in this application is faster and saves processing time.

[0030] Embodiment 2: like Figure 2 , 3 As shown in FIG. 4 , different from the embodiment 1, the embodiment further includes a shedding adsorption unit 4, which is arranged on the opposite side of the fixing unit 31 and can adsorb the shedding part 12 of the wafer 1 after being cut. A lower bin 5 is arranged below the shedding adsorption unit 4.

[0031] A shedding adsorption unit 4 is provided on the opposite side of the fixing unit 31, and the shedding adsorption unit 4 can adsorb the shedding part 12 of the wafer 1, thereby preventing the wafer 1 from falling off at the moment of separation, and can fix the shedding part 12 of the wafer 1, which is convenient for subsequent trimming. The trimmed shedding part 12 is collected by the lower bin 5.

[0032] The assembly and working process of the processing device of the diamond wafer in this embodiment are as follows: In this embodiment, it includes a main body installation component 3 and a shedding adsorption unit 4. The main body installation component 3 includes a fixing unit 31 connected to the wafer 1. In this embodiment, the fixing unit 31 on the main body installation component 3 is an adsorption device, which can use negative pressure to adsorb the wafer 1, so that only one side of the wafer 1 is connected, avoiding interference and affecting the laser cutting path during the laser processing process; wherein the shedding adsorption unit 4 is arranged on the opposite side of the fixing unit 31, and can also adsorb the wafer 1 by negative pressure, and the shedding adsorption unit 4 does not contact the wafer 1 during the cutting process. Only after the laser beam 2 cuts the wafer 1 into two parts, the main body part 11 and the shedding part 12, the shedding adsorption unit 4 will adsorb the shedding part 12 of the wafer 1, avoiding the shedding part 12 from falling directly into the lower bin 5 and waiting for subsequent trimming work.

[0033] In this embodiment, a main body rotating unit 32 is also provided on the main body mounting assembly 3, and the main body rotating unit 32 is connected to the fixing unit 31, wherein the main body rotating unit 32 can drive the fixing unit 31 to rotate. In this embodiment, one side of the chip 1 adsorbed by the fixing unit 31 is the reverse side, the side opposite to the reverse side is the front side, and the remaining diamond surfaces are the side surfaces. In this embodiment, the side surface of the chip 1 is driven to rotate by the rotation of the main body mounting assembly 3, so that the side surface of the chip 1 facing the laser beam 2 is changed during the rotation, so that the laser beam 2 can process different sides of the chip 1.

[0034] Therefore, the processing method in the present application is as follows: first, the wafer 1 is fixed by the fixing unit 31, and the removal adsorption unit 4 is placed on the opposite side of the fixing unit 31. First, one of the side surfaces of the wafer 1 is processed facing the laser beam 2, and this side surface is the first processing surface. When the processing depth of the laser beam 2 on the wafer 1 reaches half the depth of the entire wafer 1, the processing is stopped, and the rotation of the main rotating unit 32 drives the wafer 1 to change the side facing the laser beam 2, and the side surface facing the first processing surface is rotated to a position facing the laser beam 2, and this side surface is the second side surface. The laser beam 2 continues to process the second side surface until it is cut to half the depth of the wafer 1. Therefore, two cutting paths are formed on the first processing surface and the second processing surface respectively. Since the feed depth of the two cutting paths is half of the cutting path that passes directly from top to bottom, and due to the conical structure of the cutting path, the conical structure formed on the first processing surface and the second processing surface is only a small cone, rather than a large cone formed by one cutting. Under theoretical conditions, The structure of the small cone is similar to that of the large cone, and the height of the small cone is half of the height of the large cone, so the length of the base of the small cone is also half of the length of the base of the large cone. Even if two cuts are used in this embodiment to form two small cone structures, the sum of the two small cones is only half of the large cone structure. In terms of cutting loss, the cutting method in this embodiment is greatly improved compared with the prior art; further, since a conical cutting path is formed after cutting, the main body 11 and the detached part 12 formed after the wafer 1 is cut need to be trimmed in the subsequent process to form a flat cutting surface, so the inclined surface formed after the cutting needs to be cut off. In this embodiment, the final part that needs to be cut off is only half of that in the prior art under ideal conditions. Therefore, in terms of processing efficiency, the cutting in this application is faster and saves processing time.

[0035] In this embodiment, after the wafer 1 is cut and separated, the wafer 1 is divided into two parts, namely, the main part 11 and the falling part 12, wherein the main part 11 is still connected to the fixing unit 31, so the fixed position remains unchanged, and the falling part 12 loses the restraining effect of the main part 11, so under the adsorption force of the falling adsorption unit 4, it will be adsorbed by the adsorption unit, thereby realizing separation from the main part 11, and then the main part 11 of the falling part 12 is separated, and the main part 11 is fixed on the fixing unit 31, and the falling part 12 is 2 is fixed on the shedding adsorption unit 4. Since the shedding portion 12 moves toward the shedding adsorption unit 4, a gap is formed between the shedding portion 12 and the main body portion 11, which is convenient for the subsequent trimming of the cutting surface of the shedding portion 12 and the main body portion 11. At the same time, since the step-by-step cutting of the upper and lower opposite sides is adopted in this embodiment, the cutting shape on the shedding portion 12 and the main body portion 11 is an isosceles triangle protrusion, while the cutting shape in the prior art is a right triangle. Therefore, the shedding portion 12 in this embodiment has better symmetry, which is convenient for the shedding adsorption unit 4 to adsorb.

[0036] Embodiment 3: like Figure 5 , 6 As shown, in this embodiment, the shedding adsorption unit 4 is connected to a shedding deflection unit 41, and the shedding deflection unit 41 can drive the shedding portion 12 of the wafer 1 to deflect relative to the laser beam 2. The main body rotation unit 32 includes a main body deflection unit 321, and the main body deflection unit 321 can drive the wafer 1 to deflect relative to the laser beam 2. The main body rotation unit 32 includes a main body rotation unit 322, and the main body rotation unit 322 can drive the wafer 1 to rotate to change the cut surface of the wafer 1.

[0037] The shedding deflection unit 41 can drive the shedding part 12 of the wafer 1 to deflect, so that after the cutting is completed, the cut surface of the wafer 1 that needs to be trimmed is kept parallel to the conical bevel of the laser beam 2, so that a flat cut surface can be trimmed. The main body deflection unit 321 can drive the main body 11 of the wafer 1 to deflect, so that after the cutting is completed, the cut surface of the wafer 1 that needs to be trimmed is kept parallel to the conical bevel of the laser beam 2, so that a flat cut surface can be trimmed, and then the adsorption stability of the subsequent shedding adsorption unit 4 on the cut surface can be improved. The main body rotation unit 322 drives the wafer 1 to rotate, thereby changing the cut side of the wafer 1, achieving cutting effects in different directions, and improving the cutting quality.

[0038] The assembly and working process of the processing device of the diamond wafer in this embodiment are as follows: In this embodiment, it includes a main body installation component 3 and a shedding adsorption unit 4. The main body installation component 3 includes a fixing unit 31 connected to the wafer 1. In this embodiment, the fixing unit 31 on the main body installation component 3 is an adsorption device, which can use negative pressure to adsorb the wafer 1, so that only one side of the wafer 1 is connected, avoiding interference and affecting the laser cutting path during the laser processing process; wherein the shedding adsorption unit 4 is arranged on the opposite side of the fixing unit 31, and can also adsorb the wafer 1 by negative pressure, and the shedding adsorption unit 4 does not contact the wafer 1 during the cutting process. Only after the laser beam 2 cuts the wafer 1 into two parts, the main body part 11 and the shedding part 12, the shedding adsorption unit 4 will adsorb the shedding part 12 of the wafer 1, avoiding the shedding part 12 from falling directly into the lower bin 5 and waiting for subsequent trimming work.

[0039] In this embodiment, a main body rotating unit 32 is further provided on the main body mounting assembly 3 , and the main body rotating unit 32 is connected to the fixing unit 31 , wherein the main body rotating unit 32 can drive the fixing unit 31 to rotate.

[0040] Furthermore, in this embodiment, the main body rotation unit 32 includes a main body deflection unit 321 and a main body rotation unit 322, wherein the main body deflection unit 321 can drive the main body rotation unit 322, the fixing unit 31 and the chip 1 to deflect, wherein the deflection is to adjust the side of the chip 1 to approach or move away from the shedding adsorption unit 4, so that the same side of the chip 1 is tilted and deflected, and the angle of the side relative to the laser beam 2 is adjusted; and the main body rotation unit 322 can drive the chip 1 to rotate, so that different sides can face the laser beam 2; further, a shedding deflection unit 41 is also provided on the shedding adsorption unit 4, so that the shedding deflection unit 41 can drive the chip 1 of the shedding part 12 to deflect, and change the angle of the side of the shedding part 12 relative to the laser beam 2.

[0041] Therefore, the processing method in this application is as follows: in this embodiment, the side of the wafer 1 adsorbed by the fixing unit 31 is defined as the reverse side, the opposite side of the reverse side is the front side, and the remaining sides are the side sides. First, in the previous step, after the front side of the wafer 1 is processed upward, it is transported to the fixing unit 31. Therefore, when the fixing unit 31 first takes the wafer 1, the side of the wafer 1 is not facing the laser beam 2. The main body deflection unit 321 is required to drive the wafer 1 to deflect, so as to drive the front side of the wafer 1 to face the shedding adsorption unit 4. At this time, the side of the wafer 1 is aligned with the laser beam 2. Subsequently, the side surface of the wafer 1 is cut by the laser beam 2, and the side surface is the first processing surface. When the processing depth of the laser beam 2 on the wafer 1 reaches half the depth of the entire wafer 1, the processing is stopped, and the rotation of the main rotating unit 32 drives the wafer 1 to change the side facing the laser beam 2, and the side surface facing the first processing surface is rotated to a position facing the laser beam 2, and the side surface is the second side surface. The second side surface is continuously processed by the laser beam 2 until it is cut to half the depth of the wafer 1. Therefore, two cutting paths are formed on the first processing surface and the second processing surface respectively. Since the feed depth of the two cutting paths is half of the cutting path that directly penetrates from top to bottom, and due to the tapered structure of the cutting path, the tapered structure formed on the first processing surface and the second processing surface is only a small cone, rather than a large cone formed by one cutting. Under theoretical conditions, the small cone The structure of the small cone is similar to that of the large cone, and the height of the small cone is half of the height of the large cone, so the length of the base of the small cone is also half of the length of the base of the large cone. Even if two cuts are used in this embodiment to form two small cone structures, the sum of the two small cones is only half of the large cone structure. In terms of cutting loss, the cutting method in this embodiment is greatly improved compared with the prior art; further, since a conical cutting path is formed after cutting, the main body 11 and the detached part 12 formed after the wafer 1 is cut need to be trimmed in the subsequent process to form a flat cutting surface, so it is necessary to cut off the inclined surface formed after the cutting is completed. In this embodiment, the final part that needs to be cut off is only half of that in the prior art under ideal conditions. Therefore, in terms of processing efficiency, the cutting in this application is faster and saves processing time.

[0042] In this embodiment, after the wafer 1 is cut and separated, the wafer 1 is divided into two parts, namely, the main part 11 and the falling part 12, wherein the main part 11 is still connected to the fixing unit 31, so the fixed position remains unchanged, and the falling part 12 loses the restraining effect of the main part 11, so under the adsorption force of the falling adsorption unit 4, it will be adsorbed by the adsorption unit, thereby realizing separation from the main part 11, and then the main part 11 of the falling part 12 is separated, and the main part 11 is fixed on the fixing unit 31, and the falling part 12 is 2 is fixed on the shedding adsorption unit 4. Since the shedding portion 12 moves toward the shedding adsorption unit 4, a gap is formed between the shedding portion 12 and the main body portion 11, which is convenient for the subsequent trimming of the cutting surface of the shedding portion 12 and the main body portion 11. At the same time, since the step-by-step cutting of the upper and lower opposite sides is adopted in this embodiment, the cutting shape on the shedding portion 12 and the main body portion 11 is an isosceles triangle protrusion, while the cutting shape in the prior art is a right triangle. Therefore, the shedding portion 12 in this embodiment has better symmetry, which is convenient for the shedding adsorption unit 4 to adsorb.

[0043] Since the laser shape is a conical structure, when the cut surfaces of the fall-off portion 12 and the main body portion 11 are subsequently trimmed, if the laser beam 2 is directly brought close to the cut surface, the trimmed surface will be an inclined surface. Therefore, in this embodiment, the main body portion 11 and the fall-off portion 12 are respectively driven to deflect by the main body deflection unit 321 and the fall-off deflection unit 41. Since an isosceles triangle structure is formed on the cut surface after the wafer 1 is cut, the main body portion 11 and the fall-off portion 12 are deflected until the line connecting the upper and lower ends is parallel to the hypotenuse of the contour of the laser beam 2, that is, the bottom surface of the isosceles triangle structure formed on the cut surface is parallel to the hypotenuse of the contour of the laser beam 2. It is sufficient to be parallel, and the detached part 12 and the main part 11 are adjusted to be close to the laser beam 2. During the approach process, the laser beam 2 first contacts the vertex of the isosceles triangle on the cutting surface for cutting. As the laser beam 2 and the chip 1 gradually approach, the triangles on the cutting surface are gradually cut until the protruding triangles on the cutting surface disappear, and a flat cutting surface is obtained. In this embodiment, due to the use of the upper and lower step-by-step cutting method, the height of the triangle formed by the detached part 12 and the main part 11 on the cutting surface is only half of the height of the triangle formed by the existing cutting technology, thereby shortening the trimming path and improving the trimming efficiency.

Claims

1. A diamond wafer processing device, characterized in that: Included are: A laser beam (2) and a main body mounting assembly (3) for processing a wafer (1); The main body mounting assembly (3) is provided with a fixing unit (31) capable of connecting to the wafer (1); The main body installation assembly (3) comprises a main body rotating unit (32) connected to the fixing unit (31) and driving the fixing unit (31) to rotate; When the fixing unit (31) is connected to the wafer (1), the main body rotating unit (32) can synchronously drive the fixing unit (31) and the wafer (1) to rotate.

2. A diamond wafer processing device according to claim 1, characterized in that: It also includes a shedding adsorption unit (4), which is arranged on the opposite side of the fixing unit (31), and is capable of adsorbing the shedding part (12) of the wafer (1) after being cut.

3. A diamond wafer processing device according to claim 2, characterized in that: The shedding adsorption unit (4) is connected to a shedding deflection unit (41), and the shedding deflection unit (41) can drive the shedding portion (12) of the wafer (1) to deflect relative to the laser beam (2).

4. A diamond wafer processing device according to claim 2, characterized in that: A lower material bin (5) is provided below the shedding adsorption unit (4).

5. A diamond wafer processing device according to any one of claims 1 to 4, characterized in that: The main body rotating unit (32) comprises a main body deflecting unit (321), and the main body deflecting unit (321) can drive the chip (1) to deflect relative to the laser beam (2).

6. A diamond wafer processing device according to any one of claims 1 to 4, characterized in that: The main body rotating unit (32) comprises a main body rotating unit (322), and the main body rotating unit (322) can drive the wafer (1) to rotate to change the cut surface of the wafer (1).

7. A processing method using a diamond wafer processing device according to any one of claims 1 to 6, characterized in that: The following steps are included: S1, the laser beam (2) performs a cutting process on the wafer (1) connected to the fixing unit (31), and stops after cutting to the middle area of ​​the wafer (1); S2, the main body rotating unit (32) drives the wafer (1) to rotate so that the opposite side of the processed surface in step S1 faces the laser beam (2) to complete the cutting of the remaining depth; S3, the detachment adsorption unit (4) adsorbs the detached part (12) of the wafer (1) in step S2; S4. The laser beam (2) trims the detached portion (12) of the wafer (1) and the main body portion (11) connected to the fixing unit (31) respectively.

8. A processing method according to claim 7, characterized in that: In step S4, the detached portion (12) and / or the main portion (11) of the wafer (1) is deflected until the line connecting the upper and lower ends is parallel to the edge of the laser beam (2), and the detached portion (12) and / or the main portion (11) of the wafer (1) is trimmed using the laser beam (2).

9. A processing method according to claim 7, characterized in that: In step S1, the main body deflection unit (321) drives the wafer (1) to deflect until the processed surface of the wafer (1) faces the laser beam (2).

10. A processing method according to claim 7, characterized in that: In step S4, the laser beam (2) first trims the detached part (12) of the wafer (1). After the trimming of the detached part (12) is completed, the detached adsorption unit (4) is deflated, and the detached part (12) falls into the lower bin (5); then the laser beam (2) trims the main body (11).

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