Structure of micro light-emitting diode

Abstract

The invention provides a structure of a miniature light-emitting diode, in which a second light-emitting element is arranged above a first light-emitting element, and a first electrode of the first light-emitting element passes through a groove of the second light-emitting element and is electrically connected with a substrate, in one embodiment, the first light-emitting element shields a third light-emitting element, and the second light-emitting element shields a fourth light-emitting element. In another embodiment, the third light-emitting element is arranged on one side of the first light-emitting element, and in the two embodiments, individual shared electrodes of the first light-emitting element, the second light-emitting element and the third light-emitting element are electrically connected with a shared connection point of the substrate, so that the area of the light-emitting surface of the miniature light-emitting diode is further reduced.

Description

Technical Field

[0001] The present invention relates to a micro light emitting diode structure, and in particular to a micro light emitting diode with a vertical stack structure. Background Art

[0002] Micro LED is an emerging display technology that consists of even smaller light-emitting chips. Compared with existing light-emitting diode (LED) or organic light-emitting diode (OLED) display technologies, micro LED has higher brightness, contrast and color expression, as well as higher energy efficiency and long life.

[0003] Compared with existing display technologies, micro-LEDs have many advantages. The first is brightness and contrast. The brightness of micro-LEDs can be more than 10 times that of ordinary organic light-emitting diodes, and the contrast is also higher. This makes micro-LED displays significantly improved in color reproduction and image quality.

[0004] Continuing from the above, the advantage of micro-LEDs is secondly the color expression. Since the micro-LED display uses a pure light source, it can display a wider color gamut, thus providing more realistic and vivid colors. At the same time, the micro-LED display can also achieve local dimming, which means that it can achieve independent brightness adjustment of different areas on the same screen, thus achieving better contrast and energy efficiency.

[0005] Continuing from the above, the third advantage is the energy efficiency and longer lifespan, and the micro-LED uses a pure light source, so there is no need for a backlight and a color filter layer, thereby improving the light output efficiency.

[0006] Due to its advantages, micro-LEDs have become the technology of choice for many high-end display products, including smartphones, tablets, TVs, VR / AR helmets and automotive displays.

[0007] As consumers' demand for higher quality and higher resolution displays continues to increase, micro-LED technology has begun to receive more and more attention. Compared with traditional LCD, LED and OLED displays, micro-LED displays have higher brightness and better contrast, as well as a wider color space, and are therefore regarded as an important development direction for the next generation of display technology.

[0008] Micro LEDs also offer advantages in terms of reliability and long-term cost of use. Micro LEDs are more economical than other technologies due to their long life and high durability. Micro LEDs have low power consumption and long life, so they can maintain high-quality displays for a long time without requiring excessive maintenance or replacement of parts.

[0009] However, conventional micro-LEDs are red, green, and blue diodes arranged in parallel, which makes it difficult to further reduce their area. Therefore, as electronic products are becoming increasingly miniaturized, the industry needs a micro-LED structure that can effectively reduce the light output area.

[0010] In view of the above problems of the conventional technology, the present invention provides a micro light emitting diode structure, which consists of two light emitting diodes stacked up and down, and another light emitting diode is arranged, and one semiconductor layer of the light emitting diodes is connected to the substrate by a common electrode to reduce the overall light emitting surface area. Summary of the invention

[0011] An object of the present invention is to provide a micro-LED structure, which is composed of two LEDs stacked up and down, and another LED is arranged, and one semiconductor layer of the LEDs is connected to a substrate by a common electrode, so that the micro-LED structure further reduces the area of ​​the light emitting surface.

[0012] In order to achieve the above-mentioned purposes and effects, the present invention provides a structure of a micro light emitting diode, which includes: a first light emitting element, a second light emitting element, a third light emitting element and a substrate; the first light emitting element includes: a first lower semiconductor layer; a first light emitting layer is arranged above the first lower semiconductor layer, and the first light emitting layer emits a first light; a first upper conductor layer is arranged above the first light emitting layer; a first reflective layer is arranged above the first upper semiconductor layer; a first passivation layer is arranged above the first reflective layer, and the first passivation layer covers the first upper conductor layer; a first electrode is arranged through the first passivation layer and the first reflective layer. The first reflective layer is electrically connected to the first upper semiconductor layer; a first common electrode is arranged through the first passivation layer and electrically connected to the first lower semiconductor layer; the second light-emitting element includes: a second lower semiconductor layer, which is arranged above the first passivation layer, the second lower semiconductor layer is provided with a groove, and the first electrode is correspondingly arranged on an inner side of the groove; a second light-emitting layer, which is arranged above a part of the second lower semiconductor layer, and the second light-emitting layer emits a second light; a second upper semiconductor layer, which is arranged above the second light-emitting layer; a second reflective layer, which is arranged above the second upper semiconductor layer; a second passivation layer, which is arranged above the second reflective layer, The second passivation layer is coated on one side of the second upper conductor layer and another part of the second lower semiconductor layer; a second electrode is arranged through the second passivation layer and the second reflective layer and is electrically connected to the second upper semiconductor layer; a second common electrode is arranged through the second passivation layer and is electrically connected to the second lower semiconductor layer; the third light-emitting element includes: a third lower semiconductor layer, which is arranged above the second passivation layer at intervals, and the third lower semiconductor layer is electrically connected to the common electrode; a third light-emitting layer is arranged above the third lower semiconductor layer, and the third light-emitting layer emits a third light; a third upper conductor layer is arranged above the third light-emitting layer; a third electrode, The third upper semiconductor layer is electrically connected; a third shared electrode is electrically connected to the third lower semiconductor layer; a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals below the substrate, the first connection point is electrically connected to the second electrode, the second connection point is electrically connected to the first electrode, the third connection point is electrically connected to the third upper conductor layer, and the shared connection point is electrically connected to the first shared electrode, the second shared electrode and the third shared electrode, wherein the third light-emitting element is correspondingly arranged above the first light-emitting element, so that the third light passes through the first light-emitting element; with this structure, the area of ​​the light-emitting surface of the micro light-emitting diode is further reduced.

[0013] In order to achieve the above-mentioned purposes and effects, the present invention provides a structure of a micro light emitting diode, which includes: a first light emitting element, a second light emitting element, a common electrode, a third light emitting element and a substrate, wherein the first light emitting element includes a first lower semiconductor layer; a first light emitting layer, which is arranged above the first lower semiconductor layer, and the first light emitting layer emits a first light; a first upper conductor layer, which is arranged above the first light emitting layer; a first reflective layer, which is arranged above the first upper semiconductor layer; a first passivation layer, which is arranged above the first reflective layer, and the first passivation layer covers the first an upper conductor layer; a first electrode, which penetrates the first passivation layer and the first reflective layer and is electrically connected to the first upper semiconductor layer; the second light-emitting element comprises: a second lower semiconductor layer, which is arranged above the first passivation layer, the second lower semiconductor layer is provided with a groove, and the first electrode is correspondingly arranged on an inner side of the groove; a second light-emitting layer, which is arranged above a part of the second lower semiconductor layer, and the second light-emitting layer emits a second light; a second upper semiconductor layer, which is arranged above the second light-emitting layer; a second reflective layer, which is arranged above the second upper semiconductor layer; a second passivation layer, which is arranged above the first The invention relates to a light emitting device comprising: a first light emitting device and a second light emitting device, wherein the first light emitting device comprises: a first light emitting device and a second light emitting device, wherein the first light emitting device comprises: a second light emitting device and a second light emitting device, wherein the first light emitting device and the second light emitting device are provided on one side of the second reflective layer, and the second passivation layer covers one side of the second upper conductor layer and another part of the second lower semiconductor layer; a second electrode is provided through the second passivation layer and the second reflective layer and is electrically connected to the second upper semiconductor layer; the common electrode is electrically connected to the first lower semiconductor layer and the second lower semiconductor layer; the third light emitting device comprises: a third lower semiconductor layer, which is spaced apart and arranged on one side of the second passivation layer, and the third lower semiconductor layer is electrically connected to the common electrode; a third light emitting layer is arranged on one side of the third lower semiconductor layer, and the third light emitting layer emits a third light; a third upper conductor layer, It is arranged above the third light-emitting layer; the substrate, below which a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals, the first connection point is electrically connected to the second electrode, the second connection point is electrically connected to the first electrode, the third connection point is electrically connected to the third electrode, the shared connection point is electrically connected to the first shared electrode, the second shared electrode and the third shared electrode, wherein the third light-emitting element is correspondingly arranged on one side of the first light-emitting element, and the shared connection point is arranged above the first light-emitting element; with this structure, the area of ​​the light-emitting surface of the micro light-emitting diode is further reduced.

[0014] In one embodiment of the present invention, a transparent substrate is disposed below the first lower semiconductor layer.

[0015] In an embodiment of the present invention, the first light is red light, green light or blue light.

[0016] In an embodiment of the present invention, the second light is red light, green light or blue light.

[0017] In an embodiment of the present invention, the third light is red light, green light or blue light. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 : It is a schematic structural diagram of the first embodiment of the present invention; Figure 2 : It is a schematic top view of the structure of the first embodiment of the present invention; Figure 3 : It is a schematic diagram of the light path of the first embodiment of the present invention; Figure 4 : It is a schematic structural diagram of the second embodiment of the present invention; Figure 5 : It is a schematic top view of the structure of the second embodiment of the present invention; and Figure 6 : It is a schematic diagram of the light path of the second embodiment of the present invention.

Figure number comparison

[0019] In order to further understand and appreciate the structural features and effects of the present invention, a preferred embodiment and detailed description are provided as follows:

[0020] In view of the above-mentioned problems of the conventional technology, the present invention is a structure of a micro-light emitting diode, which arranges a second light-emitting element stack on top of a first light-emitting element, and the first light-emitting element and the second light-emitting element are respectively electrically connected to the top of a substrate by electrodes. The substrate is further provided with a third light-emitting element, and the third light-emitting element is electrically connected to the substrate by electrodes, and the first light-emitting element, the second light-emitting element and the third light-emitting element are electrically connected to the same connection point of the substrate by a shared electrode. In one embodiment, the third light-emitting element is arranged between the substrate and the first light-emitting element. In another embodiment, the third light-emitting element is arranged on one side of the first light-emitting element. This structure solves the problem that it is difficult to further reduce the area of ​​conventional micro-light emitting diodes.

[0021] See also Figure 1 , which is a structural schematic diagram of the first embodiment of the present invention. As shown in the figure, this embodiment is the first embodiment, which is a structure 1 of a micro light emitting diode, which includes a first light emitting element 10, a second light emitting element 20, a common electrode 30, a third light emitting element 40 and a substrate 50.

[0022] See again Figure 1 Also see Figure 2 as well as Figure 3 , Figure 2 is a schematic top view of the structure of the first embodiment of the present invention, Figure 3 is a schematic diagram of a light path according to a first embodiment of the present invention, Figure 1 for Figure 2AA cross-sectional view, as shown in the figure, in this embodiment, the first light emitting element 10 includes: a first lower semiconductor layer 12, a first light emitting layer 13, a first upper conductor layer 14, a first reflective layer 16, a first passivation layer 18 and a first electrode 19; the first light emitting layer 13 is disposed above the first lower semiconductor layer 12, the first light emitting layer 13 emits a first light L1, the first upper conductor layer 14 is disposed above the first light emitting layer 13, the first reflective layer 16, a first passivation layer 18 and a first electrode 19; the first light emitting layer 13 is disposed above the first lower semiconductor layer 12, the first light emitting layer 13 emits a first light L1, the first upper conductor layer 14 is disposed above the first light emitting layer 13, the first reflective layer 16 6 is disposed above the first upper semiconductor layer 14, the first passivation layer 18 is disposed above the first reflective layer 16, and the first passivation layer 18 covers the first upper conductor layer 14, the first electrode 19 penetrates the first passivation layer 18 and the first reflective layer 16 and is electrically connected to the first upper semiconductor layer 14. In one embodiment, the first passivation layer 18 covers one side of the first reflective layer 16, one side of the first light emitting layer 13, and one side of the first lower semiconductor layer 12.

[0023] Continuing from the above, the second light emitting element 20 includes: a second lower semiconductor layer 22, a second light emitting layer 23, a second upper semiconductor layer 24, a second reflective layer 26, a second passivation layer 28 and a second electrode 29, wherein the second lower semiconductor layer 22 is disposed above the first passivation layer 18, and the second lower semiconductor layer 22 is provided with a groove 222, the groove 222 exposes the first passivation layer 18, and the first electrode 19 is correspondingly disposed on an inner side of the groove 222 to electrically connect the first upper conductor layer 14, the second light emitting layer 23 is disposed above a portion of the second lower semiconductor layer 22, the second light emitting layer 23 emits a second light L2, and the second upper semiconductor layer 24 is disposed on an upper side of the second light emitting layer 23. The second reflective layer 26 is disposed on one side of the second upper semiconductor layer 24, the second passivation layer 28 is disposed on one side of the second reflective layer 26, and the second passivation layer 28 covers one side of the second upper conductor layer 24 and another part of the second lower semiconductor layer 22. The second electrode 29 penetrates the second passivation layer 28 and the second reflective layer 26 and is electrically connected to the second upper semiconductor layer 24. In this embodiment, the second passivation layer 28 covers one side of the second reflective layer 26 and one side of the second light emitting layer 23. In this embodiment, the second lower semiconductor layer 22 extends, while the second light emitting layer 23 and the second upper semiconductor layer 24 do not extend correspondingly, so that the second lower semiconductor layer 22 forms the groove 222 (such as Figure 2 shown).

[0024] Continuing from the above, the common electrode 30 is electrically connected to the first lower semiconductor layer 12 and the second lower semiconductor layer 22, and the third light-emitting element 40 includes: a third lower semiconductor layer 42, a third light-emitting layer 43 and a third upper conductor layer 44, the third lower semiconductor layer 42 is spaced apart above the second passivation layer 28, the third lower semiconductor layer 42 is electrically connected to the common electrode 30, the third light-emitting layer 43 is disposed above the third lower semiconductor layer 42, the third light-emitting layer 43 emits a third light L3, and the third upper conductor layer 44 is disposed above the third light-emitting layer 43; in this embodiment, the third lower semiconductor layer 42 is electrically connected to the common electrode 30.

[0025] Continuing from the above, a first connection point 52, a second connection point 54, a third connection point 56 and a shared connection point 58 are arranged at intervals below the substrate 50. The first connection point 52 is electrically connected to the second electrode 29, the second connection point 54 is electrically connected to the first electrode 19, the third connection point 56 is electrically connected to the third upper conductor layer 44, and the shared connection point 58 is electrically connected to the shared electrode 30. In this embodiment, the third light-emitting element 40 is correspondingly arranged above the first light-emitting element 10, so that the third light L3 passes through the first light-emitting element 10 (such as Figure 3 shown).

[0026] Continuing from the above, in this embodiment, the third light emitting element 40 is a vertical electrode light emitting diode.

[0027] Continuing from the above, in this embodiment, the groove 22 is formed by extending the second lower semiconductor layer 22 , so that the second lower semiconductor layer 22 can be electrically connected to the common electrode 30 to avoid mutual interference between the common electrode 30 and the first electrode 19 .

[0028] Continuing from the above, in one embodiment, the first lower semiconductor layer 12, the second lower semiconductor layer 22 and the third lower semiconductor layer 42 are N-type semiconductor layers, and the corresponding first upper semiconductor layer 14, the second upper semiconductor layer 24 and the third upper semiconductor layer 44 are P-type semiconductor layers, but this embodiment is not limited thereto.

[0029] Continuing from the above, in one embodiment, a transparent substrate 60 is further disposed below the first lower semiconductor layer 12 , and the first light L1 , the second light L2 , and the third light L3 pass through the transparent substrate 60 respectively.

[0030] Continuing from the above, in this embodiment, the common electrode 30 passes through the first passivation layer 18 and the second passivation layer 28 to electrically connect the first lower semiconductor layer 12 and the second lower semiconductor layer 22 .

[0031] See again Figure 1 , Figure 2 as well as Figure 3 As shown in the figure, in this embodiment, the first light emitting layer 13 emits the first light L1, part of the first light L1 passes through the first lower semiconductor layer 12, and another part of the first light L1 is emitted to the first reflection layer 16. The first reflection layer 16 reflects the first light L1, so that the first light L1 is emitted from the first lower semiconductor layer 12. The second light emitting layer 23 emits the second light L2, and part of the second light L2 passes through the second lower semiconductor layer 22, the first passivation layer 18, the first reflection layer 16, the first upper semiconductor layer 14, the first light emitting layer 13. And the first lower semiconductor layer 12, another part of the second light L2 is emitted to the second reflection layer 26, the second reflection layer 26 reflects the second light L2, so that the second light L2 is emitted out of the first lower semiconductor layer 12, and the third light emitting layer 43 emits the third light L3, so that the third light L3 passes through the second passivation layer 28, the second lower semiconductor layer 22, the first passivation layer 18, the first reflection layer 16 and the first upper semiconductor layer 14, the first light emitting layer 13 and the first lower semiconductor layer 12, so that the third light L3 is emitted out of the first lower semiconductor layer 12.

[0032] Continuing from the above, in this embodiment, the first light L1 is red light, green light or blue light. Similarly, the second light L2 and the third light L3 are red light, green light or blue light. For example, the first light L1 is green light, the second light L2 is blue light, and the third light L3 is red light. This is not limited here.

[0033] This embodiment further reduces the area (light emitting surface) of the micro light emitting diode by using fewer connection points.

[0034] See also Figure 4 , which is a structural schematic diagram of the second embodiment of the present invention. As shown in the figure, this embodiment is the second embodiment, which is a structure 1 of a micro light emitting diode, which includes a first light emitting element 10, a second light emitting element 20, a third light emitting element 40 and a substrate 50.

[0035] See again Figure 4 Also see Figure 5 as well as Figure 6 , Figure 5 is a schematic top view of the structure of the second embodiment of the present invention, Figure 6 is a schematic diagram of a light path according to a second embodiment of the present invention, Figure 4 for Figure 5BB cross-sectional view, as shown in the figure, in this embodiment, the first light emitting element 10 includes: a first lower semiconductor layer 12, a first light emitting layer 13, a first upper conductor layer 14, a first reflective layer 16, a first passivation layer 18, a first electrode 19 and a first common electrode 32; the first light emitting layer 13 is disposed above the first lower semiconductor layer 12, the first light emitting layer 13 emits a first light L1, the first upper conductor layer 14 is disposed above the first light emitting layer 13, the first reflective layer 16 is disposed on the first upper semiconductor layer 1 4, the first passivation layer 18 is disposed on the first reflective layer 16, and the first passivation layer 18 covers the first upper conductor layer 14, the first electrode 19 penetrates the first passivation layer 18 and the first reflective layer 16 and is electrically connected to the first upper semiconductor layer 14, in one embodiment, the first passivation layer 18 correspondingly covers one side of the first reflective layer 16, one side of the first light emitting layer 13 and one side of the first lower semiconductor layer 12, the first common electrode 32 penetrates the first passivation layer 18 and is electrically connected to the first lower semiconductor layer 12.

[0036] Continuing from the above, the second light emitting element 20 includes: a second lower semiconductor layer 22, a second light emitting layer 23, a second upper semiconductor layer 24, a second reflective layer 26, a second passivation layer 28, a second electrode 29 and a second common electrode 34, the second lower semiconductor layer 22 is disposed on the upper part of the first passivation layer 18, and the second lower semiconductor layer 22 is provided with a groove 222, the groove 222 exposes the first passivation layer 18, and the first electrode 19 is correspondingly disposed on an inner side of the groove 222 to electrically connect the first upper conductor layer 14, the second light emitting layer 23 is disposed on the upper part of a portion of the second lower semiconductor layer 22, the second light emitting layer 23 emits a second light L2, and the second upper semiconductor layer 24 is disposed on the second light emitting layer 23, the second reflective layer 26 is disposed on the second upper semiconductor layer 24, the second passivation layer 28 is disposed on the second reflective layer 26, and the second passivation layer 28 covers one side of the second upper conductor layer 24 and another part of the second lower semiconductor layer 22, the second electrode 29 penetrates the second passivation layer 28 and the second reflective layer 26 and is electrically connected to the second upper semiconductor layer 24, in this embodiment, the second passivation layer 28 covers one side of the second reflective layer 26 and one side of the second light emitting layer 23; in this embodiment, the second lower semiconductor layer 22 extends, while the second light emitting layer 23 and the second upper semiconductor layer 24 do not extend correspondingly, so that the second lower semiconductor layer 22 forms the groove 222 (such as Figure 2 As shown), the second common electrode 34 penetrates the second passivation layer 28 and is electrically connected to the second lower semiconductor layer 24.

[0037] Continuing with the above, the third light-emitting element 40 includes: a third lower semiconductor layer 42, a third light-emitting layer 43, a third upper conductor layer 44, a third electrode 49 and a third common electrode 36. The third lower semiconductor layer 42 is spaced above the second passivation layer 28, the third lower semiconductor layer 42 is electrically connected to the third common electrode 36, the third light-emitting layer 43 is disposed above the third lower semiconductor layer 42, the third light-emitting layer 43 emits a third light L3, the third upper conductor layer 44 is disposed above the third light-emitting layer 43, the third electrode 49 is electrically connected to the third upper semiconductor layer 44, and the third common electrode 36 is electrically connected to the third lower semiconductor layer 42.

[0038] Continuing from the above, a first connection point 52, a second connection point 54, a third connection point 56 and a shared connection point 58 are arranged at intervals below the substrate 50. The first connection point 52 is electrically connected to the second electrode 29, the second connection point 54 is electrically connected to the first electrode 19, the third connection point 56 is electrically connected to the third electrode 49, and the shared connection point 58 is electrically connected to the first shared electrode 32, the second shared electrode 34 and the third shared electrode 36. In this embodiment, the third light-emitting element 40 is correspondingly arranged on one side of the first light-emitting element 10, so that the third light L3 is emitted to the light-emitting surface alone (such as Figure 3 shown).

[0039] Continuing from the above, in this embodiment, the third light emitting element 40 is a flip-chip light emitting diode.

[0040] Continuing from the above, in this embodiment, the groove 22 is formed by extending the second lower semiconductor layer 22 so that the second lower semiconductor layer 22 can be electrically connected to the second common electrode 34 to avoid mutual interference between the first common electrode 32 , the second common electrode 34 and the first electrode 19 .

[0041] Continuing from the above, in one embodiment, the first lower semiconductor layer 12, the second lower semiconductor layer 22 and the third lower semiconductor layer 42 are N-type semiconductor layers, and the corresponding first upper semiconductor layer 14, the second upper semiconductor layer 24 and the third upper semiconductor layer 44 are P-type semiconductor layers, but this embodiment is not limited thereto.

[0042] Continuing from the above, in one embodiment, a transparent substrate 60 is further disposed below the first lower semiconductor layer 12 , and the first light L1 and the second light L2 pass through the transparent substrate 60 respectively. The third light L3 of this embodiment passes through one side of the transparent substrate 60 .

[0043] Continuing from the above, in this embodiment, the first common electrode 32 passes through the first passivation layer 18 to electrically connect to the first lower semiconductor layer 12 , and the second common electrode 34 passes through the second passivation layer 28 to electrically connect to the second lower semiconductor layer 22 .

[0044] See again Figure 4 , Figure 5 as well as Figure 6 As shown in the figure, in this embodiment, the first light emitting layer 13 emits the first light L1, part of the first light L1 passes through the first lower semiconductor layer 12, and another part of the first light L1 is emitted to the first reflection layer 16. The first reflection layer 16 reflects the first light L1, so that the first light L1 is emitted from the first lower semiconductor layer 12. The second light emitting layer 23 emits the second light L2, part of the second light L2 passes through the second lower semiconductor layer 22, the first passivation layer 18, the first reflection layer 16 and the first upper semiconductor layer 14, the first light emitting layer 13 and the first lower semiconductor layer 12, and another part of the second light L2 is emitted to the second reflection layer 26. The second reflection layer 26 reflects the second light L2, so that the second light L2 is emitted from the first lower semiconductor layer 12. The third light emitting layer 43 emits the third light L3, and the third light L3 is directly emitted from the third lower semiconductor layer 42.

[0045] Continuing from the above, in this embodiment, the first light L1 is red light, green light or blue light. Similarly, the second light L2 and the third light L3 are red light, green light or blue light. For example, the first light L1 is green light, the second light L2 is blue light, and the third light L3 is red light. This is not limited here.

[0046] Continuing from the above, the relationship between other components in this embodiment is the same as that of the first embodiment, and thus will not be described again.

[0047] This embodiment further reduces the area (light emitting surface) of the micro light emitting diode by using fewer connection points.

[0048] In summary, the present invention provides a structure of a micro-LED, which stacks two light-emitting elements. The two light-emitting elements are electrically connected to a substrate by electrodes respectively. Another light-emitting element is further arranged. The other light-emitting element is electrically connected to the substrate by electrodes. The same connection point of the substrate and the three light-emitting elements are electrically connected by a common electrode. The area of ​​the light-emitting surface is reduced by using fewer connection points and the area of ​​the light-emitting surface is reduced by using light-emitting elements stacked vertically to each other, so as to solve the problem that it is difficult to further reduce the area of ​​the conventional micro-LED.

[0049] The order of execution of each step in the above embodiment does not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.

[0050] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. All equivalent changes and modifications to the shape, structure, characteristics and spirit described in the claims of the present invention should be included in the scope of the claims of the present invention.

Claims

1. A micro light emitting diode structure, characterized in that: It contains: A first light emitting element, comprising: a first lower semiconductor layer; A first light emitting layer, which is disposed above the first lower semiconductor layer, and emits a first light; A first upper conductor layer, which is disposed above the first light-emitting layer; a first reflective layer disposed above the first upper semiconductor layer; a first passivation layer disposed on the first reflective layer, and the first passivation layer covers the first upper conductor layer; and a first electrode, which penetrates the first passivation layer and the first reflective layer and is electrically connected to the first upper semiconductor layer; a second light emitting element, comprising: A second lower semiconductor layer is disposed on an upper portion of the first passivation layer. The second lower semiconductor layer is provided with a groove, and the first electrode is correspondingly disposed on an inner side of the groove; a second light emitting layer disposed above a portion of the second lower semiconductor layer, the second light emitting layer emitting a second light; a second upper semiconductor layer, disposed above the second light-emitting layer; a second reflective layer disposed above the second upper semiconductor layer; a second passivation layer disposed on one portion of the second reflective layer, and the second passivation layer covers one side of the second upper conductor layer and another portion of the second lower semiconductor layer; and a second electrode, which penetrates the second passivation layer and the second reflective layer and is electrically connected to the second upper semiconductor layer; a common electrode electrically connected to the first lower semiconductor layer and the second lower semiconductor layer; A third light emitting element, comprising: a third lower semiconductor layer, which is spaced and disposed above one of the second passivation layers, and the third lower semiconductor layer is electrically connected to the common electrode; a third light emitting layer, disposed above the third lower semiconductor layer, and emitting a third light; and a third upper conductor layer, disposed above the third light-emitting layer; and a substrate, a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals below the substrate, the first connection point is electrically connected to the second electrode, the second connection point is electrically connected to the first electrode, the third connection point is electrically connected to the third upper conductor layer, and the shared connection point is electrically connected to the shared electrode; The third light emitting element is correspondingly disposed above one of the first light emitting elements, so that the third light passes through the first light emitting element.

2. The micro light emitting diode structure according to claim 1, characterized in that: A transparent substrate is disposed below the first lower semiconductor layer.

3. The micro light emitting diode structure according to claim 1, characterized in that: The first light is red light, green light or blue light.

4. The micro light emitting diode structure according to claim 1, characterized in that: The second light is red light, green light or blue light.

5. The micro light emitting diode structure according to claim 1, characterized in that: The third light is red light, green light or blue light.

6. A micro light emitting diode structure, characterized in that: It contains: A first light emitting element, comprising: a first lower semiconductor layer; a first light emitting layer, which is disposed above the first lower semiconductor layer, and emits a first light; A first upper conductor layer, which is disposed above the first light-emitting layer; a first reflective layer disposed above the first upper semiconductor layer; a first passivation layer, which is disposed above the first reflective layer, and the first passivation layer covers the first upper conductor layer; a first electrode, which penetrates the first passivation layer and the first reflective layer and is electrically connected to the first upper semiconductor layer; and a first common electrode, which penetrates the first passivation layer and is electrically connected to the first lower semiconductor layer; a second light emitting element, comprising: A second lower semiconductor layer is disposed on an upper portion of the first passivation layer. The second lower semiconductor layer is provided with a groove, and the first electrode is correspondingly disposed on an inner side of the groove; a second light emitting layer disposed above a portion of the second lower semiconductor layer, the second light emitting layer emitting a second light; a second upper semiconductor layer, disposed above the second light-emitting layer; a second reflective layer disposed above the second upper semiconductor layer; a second passivation layer disposed on one side of the second reflective layer, and the second passivation layer covers one side of the second upper conductor layer and another portion of the second lower semiconductor layer; a second electrode, which penetrates the second passivation layer and the second reflective layer and is electrically connected to the second upper semiconductor layer; and a second common electrode, which penetrates the second passivation layer and is electrically connected to the second lower semiconductor layer; A third light emitting element, comprising: a third lower semiconductor layer, which is spaced and disposed above one of the second passivation layers, and the third lower semiconductor layer is electrically connected to the common electrode; a third light emitting layer disposed above the third lower semiconductor layer, the third light emitting layer emitting a third light; a third upper conductor layer, disposed above the third light-emitting layer; a third electrode electrically connected to the third upper semiconductor layer; and a third common electrode electrically connected to the third lower semiconductor layer; and a substrate, a first connection point, a second connection point, a third connection point and a shared connection point are arranged at intervals on a lower side thereof, the first connection point is electrically connected to the second electrode, the second connection point is electrically connected to the first electrode, the third connection point is electrically connected to the third electrode, and the shared connection point is electrically connected to the first shared electrode, the second shared electrode and the third shared electrode; The third light emitting element is correspondingly arranged at one side of the first light emitting element, and the shared connection point is arranged above one side of the first light emitting element.

7. The micro light emitting diode structure according to claim 6, characterized in that: A transparent substrate is disposed below the first lower semiconductor layer.

8. The micro light emitting diode structure according to claim 6, characterized in that: The first light is red light, green light or blue light.

9. The micro light emitting diode structure according to claim 6, characterized in that: The second light is red light, green light or blue light.

10. The micro light emitting diode structure according to claim 6, characterized in that: The third light is red light, green light or blue light.

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