Diamond-based heat sink device and preparation method thereof

Abstract

The invention discloses a diamond-based heat sink device and a preparation method thereof. The diamond-based heat sink device comprises a diamond-based composite layer and two composite electrode layers. The diamond-based composite layer comprises a diamond layer, the two composite electrode layers are connected with the diamond layer in a spaced mode and used for being connected with different conductive ends of a component to be cooled, and the embedding depth of the two composite electrode layers in the diamond layer is a first preset depth. The embedding depth of the two composite electrode layers in the to-be-cooled component is a second preset depth, so that the distance between the to-be-cooled component and the opposite surface of the diamond-based composite layer reaches a preset distance; the first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, and the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer. The diamond-based heat sink device provided by the invention can quickly dissipate heat and adapt to different layout requirements.

Description

Technical Field

[0001] The invention relates to the field of heat dissipation of semiconductor devices, and in particular to a diamond-based heat sink device and a preparation method thereof. Background Art

[0002] Light-emitting diodes (LEDs) can convert electrical energy into light energy, and at the same time, they also generate a lot of heat. Especially for high-power LED devices, the heat generated per unit area during operation is more. How to quickly and effectively dissipate the heat of LED devices is an urgent problem to be solved.

[0003] In the existing technology, when cooling LEDs, the LEDs are usually placed in contact with multi-layer metal plates, and heat is transferred through the multi-layer metal plates to achieve heat dissipation. However, although these metal layers have high heat dissipation efficiency, they need to be covered with some insulating materials to prevent leakage, and the provision of insulating materials will affect the heat dissipation effect of the multi-layer metal plates on the LEDs. The existing LEDs and multi-layer metal plates are arranged in a fixed position, heat is dissipated by contact, and the arrangement structure is simple. Summary of the invention

[0004] In view of this, the present invention proposes a diamond-based heat sink device and a preparation method thereof, aiming to solve at least one of the above-mentioned technical problems and achieve fast and effective heat dissipation, safe heat dissipation and flexible layout.

[0005] The diamond-based heat sink device proposed in the first aspect of the present invention comprises: a diamond-based composite layer, including a diamond layer; two composite electrode layers, the two composite electrode layers are connected to the diamond layer at intervals, and the two composite electrode layers are respectively used to connect different conductive ends of the components to be cooled; the buried depth of the two composite electrode layers in the diamond layer is a first preset depth, and the buried depth of the two composite electrode layers in the components to be cooled is a second preset depth, so that the distance between the components to be cooled and the relative surfaces of the diamond-based composite layer reaches a preset distance; the first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, and the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer.

[0006] It can be seen from the above technical scheme that the diamond-based heat sink device proposed in the first aspect of the present invention, on the one hand, when the preset distance is greater than 0, by connecting the components to be cooled and the diamond-based composite layer with the composite electrode layer, not only can the components to be cooled realize the on and off of their electrical components, but also the heat generated by the components to be cooled can be conducted through the composite electrode layer and enter the diamond-based composite layer, and the diamond-based composite layer quickly transfers the heat outward, thereby realizing rapid heat dissipation of the components to be cooled; on the other hand, when the preset distance is equal to 0, at least part of the diamond-based composite layer is in direct contact with the surface of the components to be cooled, thereby realizing large-area rapid heat conduction, which is conducive to achieving efficient heat dissipation. Since the composite electrode layer of the present invention has a diamond layer, the diamond layer has insulating properties and excellent conductive properties, so the components to be cooled can also achieve safe heat dissipation during operation. The diamond-based heat sink device of the present invention has a variety of structures and can be flexibly adjusted according to the different layout requirements of the components to be cooled, and can meet the heat dissipation requirements of different electronic devices.

[0007] In some embodiments, the first preset depth is equal to the thickness of the composite electrode layer, the second preset depth is equal to 0, and the preset distance is equal to 0; or, the first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, the sum of the first preset depth and the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, the two composite electrode layers and the components to be cooled are respectively connected at different positions of the diamond layer at intervals, and the first preset depth is greater than or equal to 0, the second preset depth is equal to 0, and the preset distance is equal to 0; or, when the preset distance is greater than 0, thermal grease is filled between the diamond layer and the components to be cooled.

[0008] Advantageously, when the preset distance is equal to 0, the contact area between the component to be cooled and the diamond layer accounts for 0.1% to 90% of the cooling area of ​​the diamond layer.

[0009] In some embodiments, the composite electrode layer includes: a first buffer layer, the first buffer layer having a first surface and a second surface arranged opposite to each other, the first surface being in contact with the diamond layer; a conductive layer, the conductive layer being arranged on the second surface; a metal protective layer, the metal protective layer being arranged on a side of the conductive layer away from the first buffer layer; a positive electrode layer and a negative electrode layer, the positive electrode layer or the negative electrode layer being arranged on a side of the metal protective layer away from the conductive layer, and the positive electrode layer or the negative electrode layer being connected to the conductive end of the component to be cooled.

[0010] Optionally, the first buffer layer is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide; and / or, the conductive layer is copper or a copper-based composite material; and / or, the metal protective layer is gold or a gold-based composite material; and / or, the positive electrode layer and the negative electrode layer are gold or a gold alloy, wherein the mass content of gold is greater than or equal to 90%; and / or, the thickness of the first buffer layer is 0.1μm to 2μm; and / or, the thickness of the conductive layer is 1μm to 50μm; and / or, the thickness of the metal protective layer is 10nm to 500nm; and / or, the distance between the two farthest ends of the cross-section of the positive electrode layer and the negative electrode layer is 0.50mm to 3mm.

[0011] In some embodiments, the diamond-based composite layer further includes: a second buffer layer, which is disposed on a side of the diamond layer away from the composite electrode layer; and a metal substrate, which is disposed on a side of the second buffer layer away from the diamond layer.

[0012] Optionally, the second buffer layer is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide; and / or the metal substrate is copper or a copper-based composite material; and / or the melting point of the metal substrate is greater than or equal to 700°C; and / or the thickness of the metal substrate is 0.5mm to 5mm; and / or the thickness of the second buffer layer is 0.1μm to 10μm; and / or the thickness of the diamond layer can be 0.1μm to 50μm.

[0013] Optionally, the component to be cooled has a heat-conducting surface facing the diamond layer and a layout surface away from the diamond layer; the two composite electrode layers are connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the sides of the two composite electrode layers away from the diamond layer are respectively connected to the heat-conducting surface at intervals; or, one of the composite electrode layers is connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the composite electrode layer is connected to the conductive end on the heat-conducting surface; the orthographic projection of the other composite electrode layer on the diamond layer is located outside the orthographic projection of the component to be cooled on the diamond layer, and the side of the other composite electrode layer away from the diamond layer is connected to the conductive end of the layout surface; or, the orthographic projections of the two composite electrode layers on the diamond layer are both located outside the orthographic projection of the component to be cooled on the diamond layer, and the sides of the two composite electrode layers away from the diamond layer are both connected to different conductive ends of the layout surface.

[0014] The second aspect of the present invention provides a method for preparing a diamond-based heat sink device, the preparation method comprising: providing a diamond-based composite layer with a diamond layer; preparing two composite electrode layers on the surface of the diamond layer using a combination of a chemical vapor deposition method, a physical vapor deposition method, and an electrochemical method and an etching method according to the position of the composite electrode layer on the diamond-based composite layer and a first preset depth; connecting the composite electrode layer to the component to be cooled according to the position of the composite electrode layer on the component to be cooled and a second preset depth.

[0015] The preparation method of the diamond-based heat sink device proposed in the second aspect of the present invention connects the two conductive ends of the component to be cooled to the composite electrode layer, and connects the composite electrode layer to the diamond-based composite layer, thereby realizing the function of the electronic device itself and achieving efficient and safe heat dissipation. The preparation method can be adjusted according to the spacing distance between the component to be cooled and the diamond-based composite layer to prepare diamond-based heat sink devices with different structural forms.

[0016] Optionally, after the composite electrode layer is connected to the component to be cooled, when the preset distance is greater than 0, thermal grease is filled between the diamond layer and the component to be cooled; and / or, the etching method includes a plasma etching process or a photolithography method; and / or, the diamond-based composite layer includes a diamond layer, a second buffer layer and a metal substrate, the diamond-based composite layer is prepared to provide the diamond-based composite layer with a diamond layer, a metal substrate is provided, and the second buffer layer is prepared on the metal substrate by a physical vapor deposition method or a chemical vapor deposition method; the diamond layer is prepared on the second buffer layer by a chemical vapor deposition method.

[0017] It should be understood that the above general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure of the embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained like these accompanying drawings without paying any creative work.

[0019] Figure 1 Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is equal to 0, the second preset depth is equal to 0, and the preset distance is equal to the thickness of the composite electrode layer 20;

[0020] Figure 2Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is greater than 0, the second preset depth is equal to 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0;

[0021] Figure 3 Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is greater than 0, the second preset depth is equal to 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0;

[0022] Figure 4 is a schematic diagram of a structure in which a diamond-based heat sink device is connected to a component to be cooled, according to some embodiments of the present invention, wherein the first preset depth is equal to the thickness of the composite electrode layer, the second preset depth is equal to 0, and the preset distance is equal to 0;

[0023] Figure 5 Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is equal to 0, the second preset depth is greater than 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0;

[0024] Figure 6 Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is greater than 0, the second preset depth is greater than 0, and the preset distance is less than the thickness of the composite electrode layer 20 and greater than 0;

[0025] Figure 7 Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is greater than 0, the second preset depth is greater than 0, the sum of the first preset distance and the second preset distance is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0;

[0026] Figure 8 Schematic diagram of the structure of the connection between the diamond-based heat sink device and the components to be cooled proposed in some embodiments of the present invention, wherein the first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0;

[0027] Fig. 9 It is a schematic diagram of the structure of connecting a diamond-based heat sink device and a component to be cooled, proposed in some embodiments of the present invention, wherein the preset distance is greater than 0, and thermal grease is filled between the diamond layer and the component to be cooled;

[0028] Fig.10It is a schematic diagram of the structure of connecting a diamond-based heat sink device and a component to be cooled, proposed in some embodiments of the present invention, wherein one composite electrode layer is connected between the heat-conducting surface of the component to be cooled and the diamond layer, and another composite electrode layer is connected between the diamond layer and the arrangement surface of the component to be cooled;

[0029] Fig.11 It is a schematic diagram of the structure of connecting a diamond-based heat sink device and a component to be cooled, proposed in some embodiments of the present invention, wherein the orthographic projections of two composite electrode layers on the diamond layer are both located outside the orthographic projections of the component to be cooled on the diamond layer, and the two composite electrode layers are connected to different conductive ends of the arrangement surface of the component to be cooled;

[0030] Fig.12 It is a schematic flow chart of a method for preparing a diamond-based heat sink device according to some embodiments of the present invention.

[0031] Description of reference numerals:

[0032] 100. Diamond-based heat sink device;

[0033] 10. Diamond-based composite layer;

[0034] 11. diamond layer; 12. second buffer layer; 13. metal substrate;

[0035] 20. Composite electrode layer;

[0036] 21, first buffer layer; 211, first surface; 212, second surface;

[0037] 22. Conductive layer; 23. Metal protective layer; 24. Positive electrode layer; 25. Negative electrode layer;

[0038] 30. Thermal grease;

[0039] 200, components to be cooled; 201, heat conducting surface; 202, layout surface. DETAILED DESCRIPTION

[0040] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by ordinary technicians in this field without creative work are all within the scope of protection of the present invention.

[0041] In the absence of conflict, the following embodiments and features of the embodiments may be combined with each other.

[0042] like Figures 1 to 11As shown, an embodiment of the present invention provides a diamond-based heat sink device 100 , comprising: a diamond-based composite layer 10 and two composite electrode layers 20 .

[0043] The diamond-based composite layer 10 includes a diamond layer 11. The diamond layer 11 here has good insulation performance and can effectively prevent leakage during heat dissipation. The diamond layer 11 here also has excellent thermal conductivity, which is conducive to rapid heat conduction and provides a reliable heat dissipation basis. The diamond layer 11 here has high mechanical strength and can also provide stable support.

[0044] Furthermore, the two composite electrode layers 20 are connected to the diamond layer 11 at intervals, and the two composite electrode layers 20 are respectively used to connect different conductive ends of the component 200 to be cooled, so that the two composite electrode layers 20 can be respectively connected to the positive and negative conductive ends of the component 200 to be cooled; the two composite electrode layers 20 arranged at intervals can also effectively prevent the current from flowing between the two, ensuring that the component 200 to be cooled can work safely during the heat dissipation process, extending the service life of the component 200 to be cooled, and improving the working efficiency of the component 200 to be cooled.

[0045] Further, the embedding depth of the two composite electrode layers 20 in the diamond layer 11 is a first preset depth, and the embedding depth of the two composite electrode layers 20 in the component 200 to be cooled is a second preset depth, so that the distance between the relative surfaces of the component 200 to be cooled and the diamond-based composite layer 10 reaches a preset distance; the first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer 20, the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer 20, and the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer 20. That is, when the first preset depth is equal to 0, the relative surface of the composite electrode layer 20 and the diamond layer 11 is only in contact, and the composite electrode layer 20 is not embedded in the diamond layer 11; when the second preset depth is equal to 0, the relative surface of the composite electrode layer 20 and the component 200 to be cooled is only in contact, and the composite electrode layer 20 is not embedded in the component 200 to be cooled; when the preset distance is equal to 0, at least part of the surface between the component 200 to be cooled and the diamond-based composite layer 10 is in complete contact.

[0046] As can be seen from the above technical solution, the diamond-based heat sink device 100 proposed in the present invention, on the one hand, when the preset distance is greater than 0, by connecting the component 200 to be cooled and the diamond-based composite layer 10 with the composite electrode layer 20, not only can the component 200 to be cooled realize the on-off and normal operation of its electrical components, but also can make the heat generated by the component 200 to be cooled conduct through the composite electrode layer 20 and enter the diamond-based composite layer 10, and the diamond-based composite layer 10 quickly transfers the heat outward, thereby realizing rapid heat dissipation of the component 200 to be cooled. On the other hand, when the preset distance is equal to 0, at least part of the diamond-based composite layer 10 is in direct contact with the component 200 to be cooled, thereby realizing large-area rapid heat conduction, which is conducive to achieving efficient heat dissipation.

[0047] Since the composite electrode layer 20 of the present invention has a diamond layer 11, the diamond layer 11 has both insulating properties and excellent conductive properties, so the heat dissipation component 200 can also achieve safe heat dissipation during operation. The diamond-based heat sink device 100 of the present invention has a variety of structures, can be flexibly adjusted according to the layout space and layout structure of different heat dissipation components 200, and meet the heat dissipation requirements of different electronic devices, provide excellent heat dissipation performance for the heat dissipation components 200, and ensure their continuous and safe operation.

[0048] It can be understood that compared with the leakage phenomenon that may be caused by the contact between LED and multi-layer metal plates for heat dissipation in the prior art, and the poor heat dissipation effect and single layout structure caused by adding insulating materials to cover the multi-layer metal plates, the diamond-based heat sink device 100 of the present invention can not only achieve excellent thermal conduction and heat dissipation performance, but also enable the components 200 to be cooled to work continuously and safely, and can also have a variety of connection structures and layout structures, and is widely applicable. The performance of the diamond-based heat sink device 100 can be improved by more than 50% compared with the multi-layer metal plates in the prior art.

[0049] It should be noted that the heat dissipation component 200 of the present invention can be an LED chip, or other electronic components, and can be adjusted according to actual needs. When the heat dissipation component 200 is an LED chip, heat dissipation of the LED chip is described as an example.

[0050] In some embodiments of the present invention, Figure 4As shown, the first preset depth is equal to the thickness of the composite electrode layer 20, the second preset depth is equal to 0, and the preset distance is equal to 0. In these examples, the composite electrode layer 20 is entirely embedded in the diamond layer 11, and the side of the composite electrode layer 20 connected to the component 200 to be cooled is flush with the surface of the diamond layer 11, so that when the component 200 to be cooled is electrically connected to the composite electrode layer 20, the diamond layer 11 contacts the heat-conducting surface 201 of the component 200 to be cooled, so that the diamond layer 11 can not only form multiple-surface heat transfer with the composite electrode layer 20, but also form a large-area contact with the component 200 to be cooled, so as to realize direct heat conduction and stable support of the diamond layer 11 to the component 200 to be cooled, realize reliable arrangement and effective heat dissipation of the component 200 to be cooled, and ensure continuous and stable operation of the component 200 to be cooled.

[0051] Advantageously, if Figure 7 As shown, the first preset depth is greater than 0, the second preset depth is greater than 0, the sum of the first preset depth and the second preset depth is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0. In these examples, part of the composite electrode layer 20 is embedded in the diamond layer 11, and the remaining part of the composite electrode layer 20 is embedded in the component 200 to be cooled, so that the depth of the composite electrode layer 20 extending into the diamond layer 11 is reduced, but the action surface of the composite electrode layer 20 and the component 200 to be cooled is increased, which effectively improves the electrical connection stability between the composite electrode layer 20 and the component 200 to be cooled; at the same time, the diamond layer 11 also forms contact with the component 200 to be cooled, provides support for the component 200 to be cooled, and also increases the cooling efficiency.

[0052] Advantageously, if Figure 8 As shown, the first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer 20, and the preset distance is equal to 0. In these examples, the composite electrode layer 20 is in direct contact with the upper surface of the diamond layer 11 and is not embedded in the diamond layer 11, and the composite electrode layer 20 is entirely embedded in the component 200 to be cooled, thereby ensuring that the electrical connection between the composite electrode layer 20 and the component 200 to be cooled is stable, the composite electrode layer 20 will not leak electricity, and the contact area between the composite electrode layer 20 and the component 200 to be cooled is increased. The diamond layer 11 also provides support and contact heat dissipation for the component 200 to be cooled, thereby improving the overall heat dissipation efficiency of the component 200 to be cooled.

[0053] Advantageously, if Fig. 9As shown, when the preset distance is greater than 0, the diamond layer 11 and the components 200 to be cooled are filled with thermal grease 30. The thermal grease 30 is easy to add, has good temperature resistance, and stable performance. The addition of the thermal grease 30 can increase the heat conduction area between the components 200 (LED chips) to be cooled and the diamond layer 11, so that the composite electrode layer 20 can be effectively insulated to prevent leakage, and also improve the heat dissipation and insulation effect of the components 200 to be cooled. It should be noted that the thermal grease 30 of the present invention can be filled in the gap between the two-layer structure in any embodiment where the preset distance is greater than 0, so as to increase the thermal conductivity and improve the insulation protection.

[0054] Advantageously, if Fig.11 As shown, two composite electrode layers 20 and components 200 to be cooled are connected at different positions of the diamond layer 11 at intervals, and the first preset depth is greater than or equal to 0 and less than the thickness of the composite electrode layer 20, the second preset depth is equal to 0, and the preset distance is equal to 0. In these examples, the two composite electrode layers 20 can be arranged only on the surface of the diamond layer 11, or can be partially embedded in the diamond layer 11; the other ends of the two composite electrode layers 20 are directly connected to the arrangement surface 202 of the components 200 to be cooled; the components 200 to be cooled are in close contact with the diamond layer 11, forming a contact surface with a large area, which is convenient for the diamond layer 11 to efficiently cool the components 200 to be cooled; the diamond layer 11 also provides support and insulation for the components 200 to be cooled, so that the components 200 to be cooled can work stably for a long time.

[0055] Advantageously, when the preset distance is equal to 0, the contact area between the heat dissipation component 200 and the diamond layer 11 accounts for 0.1% to 90% of the heat dissipation area of ​​the diamond layer 11. Within the above range, the integration of the heat dissipation component 200 is high, the cost of the diamond layer 11 is controllable, and the diamond layer 11 has a significant heat dissipation effect on the heat dissipation component 200.

[0056] In some embodiments of the present invention, Figures 1 to 11 As shown, the composite electrode layer 20 includes: a first buffer layer 21 , a conductive layer 22 , a metal protection layer 23 , and a positive electrode layer 24 or a negative electrode layer 25 .

[0057] Among them, the first buffer layer 21 has a first surface 211 and a second surface 212 arranged opposite to each other, the first surface 211 is in contact with the diamond layer 11, the conductive layer 22 is arranged on the second surface 212, the metal protective layer 23 is arranged on the side of the conductive layer 22 away from the first buffer layer 21, the positive electrode layer 24 or the negative electrode layer 25 is arranged on the side of the metal protective layer 23 away from the conductive layer 22, and the positive electrode layer 24 or the negative electrode layer 25 is connected to the conductive end of the component 200 to be dissipated. In these examples, the first buffer layer 21 can be connected to the diamond layer 11, and provide a certain thermal conductive buffering performance and low thermal resistance. The conductive layer 22 can effectively conduct electricity, so that the composite electrode layer 20 can conduct current to the component 200 to be dissipated. The metal protective layer 23 can protect the conductive layer 22, prevent the conductive layer 22 from being oxidized, and effectively reduce the aging degree of the conductive layer 22. The positive electrode layer 24 and the negative electrode layer 25 can be connected to the positive conductive end and the negative conductive end of the component 200 to be dissipated, respectively, so as to form a conductive loop.

[0058] Optionally, the first buffer layer 21 is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide. The thermal conductivity of these materials is greater than 20W / mK, and the thermal expansion coefficient is less than 9×10 -6 / K, the interface thermal stress between the diamond layer 11 is small, the heat transfer is uniform, and the heat transfer effect is good, so that the heat generated by the component 200 to be cooled can be quickly transferred from the composite electrode layer 20 to the diamond layer 11, and then the heat is further transferred by the entire diamond-based composite layer 10, so that the heat generated by the component 200 to be cooled can be quickly conducted away, thereby extending the service life.

[0059] Optionally, the conductive layer 22 is copper or a copper-based composite material. In these examples, copper or copper-based composite materials can achieve excellent electrical conductivity and good thermal conductivity, which is conducive to effective thermal conduction when the composite electrode layer 20 exerts its power transmission capability. Advantageously, the copper content in the Cu-based composite material is higher than 50%, and the thermal conductivity is higher than 250W / mk, thereby ensuring that the conductive layer 22 can achieve current conduction and good thermal conductivity.

[0060] Optionally, the metal protective layer 23 is gold or a gold-based composite material. The properties of gold are extremely stable and not easily oxidized, and can effectively protect the conductive layer 22 to prevent the conductive layer 22 containing copper from being oxidized or corroded. Ensure that the interface performance of the conductive layer 22 in contact with the metal protective layer 23 is stable. The metal protective layer 23 made of gold or a gold-based composite material can also achieve good heat conduction and electrical performance conduction, so that the heat transmitted from the positive electrode layer 24 or the negative electrode layer 25 can be quickly transferred to the conductive layer 22, the first buffer layer 21 and enter the diamond-based composite layer 10; it can also enable the current transmitted from the positive electrode layer 24 or the negative electrode layer 25 to be effectively transmitted, so as to achieve normal operation of the component 200 to be cooled.

[0061] Optionally, the positive electrode layer 24 and the negative electrode layer 25 are gold or a gold alloy, wherein the mass content of gold is greater than or equal to 90%. The positive electrode layer 24 and the negative electrode layer 25 made of gold or a gold alloy are stable in nature, not easily oxidized, and can also achieve good heat conduction and current conduction. In addition, gold or a gold alloy has good ductility, which facilitates the positive electrode layer 24 and the negative electrode layer 25 to be made into different shapes, so as to achieve different connection forms between the composite electrode layer 20 and the components 200 to be dissipated. Advantageously, when a gold alloy is selected, the gold content is ensured to be above 90% so that the properties of gold in the alloy can be highlighted.

[0062] Optionally, the thickness of the first buffer layer 21 is 0.1 μm to 2 μm. If the first buffer layer 21 is too thinner than 0.1 μm, it will be difficult to form a good contact with the diamond layer 11, and the bonding force will be reduced; if the first buffer layer 21 is too thicker than 2 μm, the thermal resistance will be too large, and the cost and stress will increase. Therefore, limiting the thickness of the first buffer layer 21 to 0.1 μm to 2 μm is not only convenient for processing, cost controllable, and thermal stress reasonable, but also enables the first buffer layer 21 to form a good contact with the diamond layer 11 and achieve a greater bonding force. Furthermore, controlling the thickness of the first buffer layer 21 to 0.2 μm to 1 μm can be more conducive to achieving the aforementioned performance.

[0063] Optionally, the thickness of the conductive layer 22 is 1 μm to 50 μm. If the thickness of the conductive layer 22 is too thin, the conductivity is poor, which may easily cause the risk of disconnection; if the conductive layer 22 is too thick, the cost and stress will increase. Therefore, limiting the thickness of the conductive layer 22 to 1 μm to 50 μm not only has good conductivity, reasonable cost control, and good stress control, but also ensures that the circuit always remains in a connected state and effectively prevents disconnection. Furthermore, controlling the thickness of the conductive layer 22 to 5 μm to 30 μm can be more conducive to achieving the aforementioned performance.

[0064] Optionally, the thickness of the metal protective layer 23 is 10nm to 500nm. If the thickness of the metal protective layer 23 is too thin, it is not enough to protect the conductive layer 22; if the thickness of the metal protective layer 23 is too thick, the cost increases. Therefore, limiting the thickness of the metal protective layer 23 to 10nm to 500nm can not only reliably protect the conductive layer 22, but also keep the cost within a reasonable range. Furthermore, controlling the thickness of the metal protective layer 23 to 50nm to 200nm can be more conducive to achieving the aforementioned performance.

[0065] Optionally, the distance between the two farthest ends of the cross section of the positive electrode layer 24 and the negative electrode layer 25 is 0.50 mm to 3 mm. In other words, the positive electrode layer 24 and the negative electrode layer 25 need to have a certain cross-sectional size. If the cross-sectional size is too large, the preparation cost is high, and if the cross-sectional size is too small, it is easy to increase the probability of melting at high temperature when high current passes. Therefore, controlling the cross-sectional size of the positive electrode layer 24 and the negative electrode layer 25 within the above range can ensure that the preparation cost is reasonable without melting at high temperature.

[0066] In some embodiments, Figures 1 to 11 As shown in various embodiments, the diamond-based composite layer 10 further includes: a second buffer layer 12 and a metal substrate 13 .

[0067] The second buffer layer 12 is disposed on the side of the diamond layer 11 away from the composite electrode layer 20. The metal substrate 13 is disposed on the side of the second buffer layer 12 away from the diamond layer 11. The second buffer layer 12 can further transfer the heat absorbed by the diamond layer 11 and guide it to the metal substrate 13, so that the heat can be dispersed more easily, so that the heat absorbed by the diamond-based composite layer 10 can be evenly transferred and quickly dissipated to the surrounding environment, thereby improving the heat dissipation efficiency.

[0068] Optionally, the second buffer layer 12 is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide. The thermal conductivity of these materials is greater than 20W / mK, and the thermal expansion coefficient is less than 9×10 -6 / K, the interface thermal stress between the diamond layer 11 and the diamond layer 11 is small, the heat transfer is uniform, and the heat transfer effect is good, so that the heat absorbed by the diamond layer 11 can be quickly transferred to the second buffer layer 12, and the second buffer layer 12 can further transfer the heat to the metal substrate 13, and finally the heat generated by the component 200 to be cooled can be quickly heat-sunk through the multi-layer structure and transferred to the environment around the diamond-based composite layer 10, thereby extending the service life of the component 200 to be cooled under high temperature operation.

[0069] Advantageously, the second buffer layer 12 is a multilayer composite structure. For example, the multilayer composite structure can be a multilayer composite structure composed of titanium carbide and titanium alternately overlapping multiple times, thereby improving the bonding force between the diamond layer 11 and the metal substrate 13, and reducing the interface thermal stress between the metal substrate 13 and the diamond layer 11, preventing the phenomenon of thermal stress surge at the connection interface between the two, and improving the uniformity of heat conduction. It can also be a multilayer composite structure composed of other materials among the aforementioned Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide, which will not be described here.

[0070] Advantageously, the second buffer layer 12 is a gradient film structure. For example, the gradient film structure is formed into a multi-layer structure with different thermal conductivity properties. Exemplarily, the gradient film structure includes three gradient film layers, which are the first gradient film layer, the second gradient film layer and the third gradient film layer in the direction from the diamond layer 11 to the metal substrate 13. The first gradient film layer includes Si and tungsten carbide with a mass percentage of 70:30; the second gradient film layer includes Si and tungsten carbide with a mass percentage of 60:40; and the third gradient film layer includes Si and tungsten carbide with a mass percentage of 30:70. As a result, the mass content of different substances on each gradient film layer is different, so that the second buffer layer 12 as a whole can achieve a layer-by-layer transition of thermal conductivity, so that the thermal stress transfer between the diamond layer 11 and the metal substrate 13 is more stable, and there will be no sudden change in thermal stress. Different gradient film layers can also be made of other materials in the aforementioned Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide, which will not be repeated here.

[0071] Optionally, the metal substrate 13 is copper or a copper-based composite material. In these examples, copper or copper-based composite materials can achieve good heat conduction, and the price is relatively favorable compared to gold, which is conducive to controlling costs and achieving reliable heat conduction. The metal substrate 13 also provides a supporting basis, so that the entire diamond-based heat sink device 100 can provide stable support for the heat dissipation component 200. The copper-based composite material can be a copper-carbon composite material and a copper alloy composite material.

[0072] Advantageously, the melting point of the metal substrate 13 is greater than or equal to 700° C., which effectively prevents the metal substrate 13 from melting at high temperatures and ensures that the metal substrate 13 has a stable structure and does not collapse during the heat dissipation process.

[0073] Optionally, the thickness of the metal substrate 13 is 0.5 mm to 5 mm. If the thickness of the metal substrate 13 is too thin, it is not enough to provide good support and sufficient heat sinking, and if the thickness of the metal substrate 13 is too thick, the preparation cost is high. Therefore, limiting the thickness of the metal substrate 13 to between 0.5 mm and 5 mm can ensure that the metal substrate 13 provides good support, sufficient heat sinking and uniform heat transfer, and the preparation cost is controlled within a reasonable range. Furthermore, limiting the thickness of the metal substrate 13 to 0.5 mm to 2 mm can be more conducive to achieving the aforementioned performance.

[0074] Optionally, the thickness of the second buffer layer 12 is 0.1μm to 10μm. If the thickness of the second buffer layer 12 is too thin to cover the metal substrate 13, it is easy to cause etching of the metal substrate 13, and the bonding force between the second buffer layer 12 and the metal substrate 13 is reduced; if the thickness of the second buffer layer 12 is too thick, the thermal resistance is large, the cost is high, and the interface stress is increased. Limiting the thickness of the second buffer layer 12 to between 0.1μm and 10μm can ensure that the second buffer layer 12 fully covers the metal substrate 13, effectively prevent the metal substrate 13 from being etched during the preparation process, and enable the second buffer layer 12 and the metal substrate 13 to have a greater bonding force, a smaller thermal resistance, and a reasonable cost control. Furthermore, limiting the thickness of the second buffer layer 12 to 0.5μm to 5μm can be more conducive to achieving the aforementioned performance.

[0075] The terms "first" and "second" in the present invention are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0076] Optionally, the thickness of the diamond layer 11 can be 0.1 μm to 50 μm. If the thickness of the diamond layer 11 is too thin to cover the second buffer layer 12, it is easy to cause the diamond-based composite layer 10 to short-circuit; if the thickness of the diamond layer 11 is too thick, the cost and stress will increase. Limiting the thickness of the diamond layer 11 within the above range can ensure that the diamond layer 11 fully covers the second buffer layer 12, effectively prevent the diamond-based composite layer 10 from leaking electricity and causing a short circuit of the component 200 to be dissipated, and control the manufacturing cost within a reasonable range, and control the stress within a reasonable range. Furthermore, limiting the thickness of the diamond layer 11 to 0.5 μm to 20 μm can be more conducive to achieving the aforementioned performance.

[0077] Alternatively, if Figures 1 to 9 As shown, the heat dissipation component 200 has a heat conduction surface 201 facing the diamond layer 11 and a layout surface 202 away from the diamond layer 11, two composite electrode layers 20 are connected between the heat conduction surface 201 of the heat dissipation component 200 and the diamond layer 11, and the surfaces of the two composite electrode layers 20 away from the diamond layer 11 are respectively connected to the heat conduction surface 201 at intervals. In these examples, even when the preset distance is equal to 0, the size of the contact surface between the heat dissipation component 200 and the diamond layer 11 is smaller than the area size of the heat conduction surface 201, that is, the heat conduction surface 201 is in contact with the two composite electrode layers 20, so that the heat conduction surface 201 and the diamond layer 11 are partially in surface contact, and partially transferred to the diamond layer 11 through the composite electrode layer 20 as an intermediate heat transfer member.

[0078] Advantageously, for Figures 1 to 9 In the example, two composite electrode layers 20 are respectively arranged between the heat-conducting surface 201 of the component 200 to be cooled and the diamond layer 11. At this time, the contact surface between the two composite electrode layers 20 and the heat-conducting surface 201 (or the contact surface with the diamond layer 11) occupies 0.5 to 0.9 of the surface area of ​​the entire diamond layer 11, ensuring good electrical and thermal conductivity, effectively preventing short circuits, and controlling costs within a reasonable range.

[0079] Alternatively, if Fig.10 As shown, one of the composite electrode layers 20 is connected between the heat-conducting surface 201 of the component 200 to be cooled and the diamond layer 11, and the composite electrode layer 20 is connected to the conductive end on the heat-conducting surface 201, and the orthographic projection of the other composite electrode layer 20 on the diamond layer 11 is located outside the orthographic projection of the component 200 to be cooled on the diamond layer 11, and the side of the other composite electrode layer 20 away from the diamond layer 11 is connected to the conductive end of the arrangement surface 202. In these examples, there is only one composite electrode layer 20 between the heat-conducting surface 201 and the diamond layer 11, and the other composite electrode layer 20 is not connected to the heat-conducting surface 201, but is connected to the arrangement surface 202, so that the structural design of the diamond-based composite layer 10 is more flexible, so as to adapt to the connection with the electrically connected conductive ends of more types of components 200 to be cooled.

[0080] Alternatively, if Fig.11 As shown, the orthographic projections of the two composite electrode layers 20 on the diamond layer 11 are both located outside the orthographic projections of the components 200 to be cooled on the diamond layer 11, and the sides of the two composite electrode layers 20 away from the diamond layer 11 are connected to different conductive ends of the arrangement surface 202. In these examples, the heat-conducting surface 201 is in full contact with the diamond layer 11, and there is no composite electrode layer 20 between the two, so that the preset distance is equal to 0. At this time, the components 200 to be cooled do not need to pass through the composite electrode layer 20 for intermediate conduction during the heat dissipation process, but directly transfer all the heat to the diamond layer 11, and then transfer it from the diamond layer 11 to the entire diamond-based composite layer 10, so that the heat is quickly sunk to the diamond-based composite layer 10. The diamond layer 11 also provides support and insulation for the entire components 200 to be cooled, so that the working performance of the components 200 to be cooled is more stable.

[0081] Advantageously, the contact surface between the two composite electrode layers 20 and the diamond layer 11 accounts for 0.1 to 0.3 of the surface of the diamond layer 11, ensuring stable electrical and thermal conduction and guaranteeing the light output area of ​​the LED chip.

[0082] The following describes a method for preparing the diamond-based heat sink device 100 of the present invention.

[0083] The present invention proposes a method for preparing the diamond-based heat sink device 100 of each of the above examples, such as Fig.12 As shown, the preparation method comprises the following steps:

[0084] Step S10 , providing a diamond-based composite layer 10 with a diamond layer 11 .

[0085] Optionally, the diamond-based composite layer 10 includes a diamond layer 11, a second buffer layer 12 and a metal substrate 13. The diamond-based composite layer 10 is prepared to provide a diamond-based composite layer 10 with a diamond layer 11: a metal substrate 13 is provided, and the second buffer layer 12 is prepared on the metal substrate 13 by a physical vapor deposition method or a chemical vapor deposition method; and the diamond layer 11 is prepared on the second buffer layer 12 by a chemical vapor deposition method, thereby forming a three-layer composite structure.

[0086] Exemplarily, when preparing the diamond layer 11, hot wire chemical vapor deposition is used for preparation, specifically: the metal substrate 13 containing the second buffer layer 12 is cleaned with deionized water, anhydrous ethanol, and deionized water for 5 minutes to 30 minutes, the surface is dried with nitrogen, placed in a surface cleaner and dried with ozone gas for 5 minutes to 30 minutes, and then the sample is placed in a diamond suspension for nucleation treatment for 5 minutes to 30 minutes. Then blow it dry with nitrogen, and then place it on a heating table at 50°C to 80°C for drying; the composite structure of the treated diamond layer 11 and the second buffer layer 12 is placed on the deposition base of the hot wire chemical vapor deposition device. After the internal vacuum is evacuated to below 5Pa, hydrogen and methane are introduced as reaction gases to deposit the diamond layer 11 on the second buffer layer 12. The process parameters are as follows: the temperature of the deposition base is 600℃~800℃, the hydrogen flow rate is 400sccm~600sccm, the methane flow rate is 10sccm~30sccm, the gas pressure is 3kPa~8kPa, the power of the hot wire chemical vapor deposition device is 15kW~20kW, the deposition time is 1h~20h, and the thickness of the diamond layer 11 is 1μm~20μm.

[0087] Step S20, according to the position of the composite electrode layer 20 on the diamond-based composite layer 10 and the first preset depth, two composite electrode layers 20 are prepared on the surface of the diamond layer 11 by using at least one of a chemical vapor deposition method, a physical vapor deposition method and an electrochemical method in combination with an etching method.

[0088] Optionally, the etching method includes a plasma etching process or a photolithography method.

[0089] Optionally, when the first preset depth is equal to 0, a first buffer layer 21 is directly prepared on the surface of the diamond layer 11 by a physical vapor deposition method or a chemical vapor deposition method. Then, a conductive layer 22 is further prepared on the surface of the first buffer layer 21 by a physical vapor deposition method or a chemical vapor deposition method. Then, a metal protective layer 23 is further prepared on the surface of the conductive layer 22 by a physical vapor deposition method or a chemical vapor deposition method. Then, the metal protective layer 23, the conductive layer 22, and the first buffer layer 21 are processed separately by exposure, etching, and cleaning processes, leaving the required two parts. Finally, the positive electrode layer 24 or the negative electrode layer 25 is welded on the two spaced metal protective layers 23 to achieve the preparation of the composite electrode layer 20.

[0090] Optionally, when the first preset depth is greater than 0, a patterning process of photolithography and etching may be used to obtain a pit structure on the surface of the diamond layer 11, and then a related layer structure of the composite electrode layer 20 is prepared on the surface of the diamond layer 11 having the pit structure. The method for preparing the related layer structure of the composite electrode layer 20 is similar to the preparation method used when the first preset depth is equal to 0, and will not be described in detail here.

[0091] For example, the plasma etching process uses CF 4 , oxygen, trifluoromethane or Ar, or a combination thereof; etching working pressure 0.5Pa~100Pa, etching power density 0.5W / cm 2 ~20W / cm 2 When the etching working pressure is within the above range, the plasma stability is good, the etching uniformity is good, the etching efficiency is high, and the surface structure of the diamond layer 11 will not be damaged.

[0092] In a specific example, a combined gas of oxygen:trifluoromethane=1:1 is selected for etching, the etching power is 400W, and the etching working gas pressure is 20Pa.

[0093] Step S30 , connecting the composite electrode layer 20 to the component 200 to be cooled according to the position of the composite electrode layer 20 on the component 200 to be cooled and the second preset depth.

[0094] Exemplarily: the positive electrode layer 24 or the negative electrode layer 25 is welded on the component 200 to be cooled, so as to realize the connection between the composite electrode layer 20 and the component 200 to be cooled.

[0095] For the case where the second preset distance is greater than 0, it is only necessary to adjust the position of the composite electrode layer 20 relative to the diamond layer 11 and the thickness of the exposed diamond layer 11 in advance according to the position of the connection groove of the heat dissipation component 200, so that the composite electrode layer 20 can be aligned with the heat dissipation component 200 and can be connected to the heat dissipation component 200.

[0096] The preparation method of the diamond-based heat sink device 100 proposed in the present invention connects the two conductive ends of the heat dissipation component 200 to the composite electrode layer 20, and connects to the diamond-based composite layer 10 through the composite electrode layer 20, thereby realizing the electronic device function of the heat dissipation component 200 and achieving efficient and safe heat dissipation. The preparation method can be adjusted according to the spacing distance and layout structure between the heat dissipation component 200 and the diamond-based composite layer 10, so as to prepare diamond-based heat sink devices 100 of different structural forms to meet the layout requirements of the heat dissipation component 200.

[0097] Optionally, after step S30, step S40 is further included: after connecting the composite electrode layer 20 to the component 200 to be cooled, when the preset distance is greater than 0, filling thermal grease 30 between the diamond layer 11 and the component 200 to be cooled.

[0098] The diamond-based heat sink device 100 of the present application and the method for preparing the diamond-based heat sink device 100 are further described below with reference to specific embodiments.

[0099] Example 1

[0100] like Figure 1 As shown, the diamond-based heat sink device 100 includes a diamond-based composite layer 10 and two composite electrode layers 20. The diamond-based composite layer 10 includes a diamond layer 11, a second buffer layer 12 and a metal substrate 13. The second buffer layer 12 is arranged on a side of the diamond layer 11 away from the composite electrode layer 20, and the metal substrate 13 is arranged on a side of the second buffer layer 12 away from the diamond layer 11. The material of the second buffer layer 12 is Ti. The material of the metal substrate 13 is Cu.

[0101] The two composite electrode layers 20 are arranged at intervals in the area opposite to the diamond layer 11 and the heat dissipation component 200, and the two composite electrode layers 20 each include: a first buffer layer 21, a conductive layer 22 and a metal protective layer 23. The first buffer layer 21 has a first surface 211 and a second surface 212 arranged opposite to each other, the first surface 211 is in contact with the diamond layer 11, the conductive layer 22 is arranged on the second surface 212, and the metal protective layer 23 is arranged on the side of the conductive layer 22 away from the first buffer layer 21. The two composite electrode layers 20 also include a positive electrode layer 24 and a negative electrode layer 25, respectively. A positive electrode layer 24 is arranged on a side of the metal protective layer 23 of one composite electrode layer 20 away from the conductive layer 22, and a negative electrode layer 25 is arranged on a side of the metal protective layer 23 of the other composite electrode layer 20 away from the conductive layer 22. The material of the first buffer layer 21 is Ti, the material of the conductive layer 22 is Cu, and the material of the metal protective layer 23 is gold. The material of the positive electrode layer 24 and the negative electrode layer 25 is gold. The positive electrode layer 24 and the negative electrode layer 25 of the two composite electrode layers 20 are respectively used to connect different conductive ends of the components 200 to be cooled.

[0102] The buried depth of the two composite electrode layers 20 in the diamond layer 11 is a first preset depth, and the buried depth of the two composite electrode layers 20 in the component 200 to be cooled is a second preset depth, so that the distance between the relative surface of the component 200 to be cooled and the diamond-based composite layer 10 reaches a preset distance; the first preset depth is equal to 0, the second preset depth is equal to 0, and the preset distance is equal to the thickness of the composite electrode layer 20.

[0103] The following describes the steps of preparing the diamond-based heat sink device 100 in this embodiment:

[0104] like Fig.12 As shown, step S10, chemical vapor deposition is performed on the surface of the metal substrate 13 made of Cu material and a second buffer layer 12 made of Ti material is prepared. The thickness of the second buffer layer 12 is 5μm. The metal substrate 13 provided with the second buffer layer 12 is cleaned and treated with deionized water, anhydrous ethanol, and deionized water for 20 minutes, the surface is dried with nitrogen, placed in a surface cleaner and dried with ozone gas for 20 minutes, and then the sample is placed in a diamond suspension for nucleation treatment for 25 minutes. It is then blown dry with nitrogen, and then placed on a heating table at 50°C for drying; the composite structure of the treated diamond layer 11 and the second buffer layer 12 is placed on the deposition base of the hot wire chemical vapor deposition device. After the internal vacuum is evacuated to below 5Pa, hydrogen and methane are introduced as reaction gases to deposit the diamond layer 11 on the second buffer layer 12. The temperature of the deposition platform is 600°C, the hydrogen flow rate is 500 sccm, the methane flow rate is 20 sccm, the gas pressure is 4 kPa, the power of the hot wire chemical vapor deposition device is 15 kW, the deposition time is 12 hours, and the thickness of the diamond layer 11 is 15 μm.

[0105] Step S20, directly prepare a first buffer layer 21 made of Ti on the surface of the diamond layer 11 by chemical vapor deposition. And further prepare a conductive layer 22 made of Cu on the surface of the first buffer layer 21 by chemical vapor deposition. Then further prepare a metal protective layer 23 made of gold on the surface of the conductive layer 22 by chemical vapor deposition. Then, the metal protective layer 23, the conductive layer 22, and the first buffer layer 21 are processed respectively by exposure, etching and cleaning processes, and the required two parts remain. During the etching process, a combined gas of oxygen: trifluoromethane = 1:1 is selected for etching, the etching power is 400W, and the etching working pressure is 20Pa. Finally, the positive electrode layer 24 or the negative electrode layer 25 is welded on the two spaced metal protective layers 23, and the other end of the positive electrode layer 24 and the other end of the negative electrode layer 25 are welded on the component 200 to be dissipated, so as to realize the connection between the composite electrode layer 20 and the component 200 to be dissipated. The positive electrode layer 24 or the negative electrode layer 25 is made of gold.

[0106] The first buffer layer 21 or the second buffer layer 12 in this embodiment 1 may also be selected from one or more combinations of Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide, or a combination of Ti and Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide, without limitation here. The conductive layer 22 or the metal substrate 13 may also be selected from a copper-based composite material, without limitation here. The metal protective layer 23 may also be selected from a gold-based composite material, without limitation here. The positive electrode layer 24 and the negative electrode layer 25 may also be selected from a gold alloy, without limitation here. In addition, the selected process parameters may also be selected in combination within the range of the aforementioned process parameters according to requirements, without limitation here. This embodiment 1 is merely exemplary and cannot be understood as a limitation on the present application.

[0107] Example 2

[0108] like Figure 2-Figure 4 , Figure 6 and Figure 7 As shown, for the case where the first preset depth is greater than 0, it is necessary to open a pit structure with different depths on the surface of the diamond layer 11. Compared with Example 1, the main process is roughly the same. The difference is that it is also necessary to use a patterning process of photolithography and etching to obtain a pit structure on the surface of the diamond layer 11 in step S20, and then prepare the relevant layer structure of the composite electrode layer 20 on the surface of the diamond layer 11 with the pit structure.

[0109] Example 3

[0110] like Fig. 9 As shown, for each embodiment where the preset distance is greater than 0, thermal grease 30 can be added. In these examples, compared with embodiment 1, the main process is substantially the same, except that after step S30, step S40 is further included: after connecting the composite electrode layer 20 to the component 200 to be cooled, the thermal grease 30 is filled between the diamond layer 11 and the component 200 to be cooled.

[0111] Example 4

[0112] like Figure 8 or Fig. 9 As shown, for various embodiments in which the positive electrode layer 24 and / or the negative electrode layer 25 are welded on the arrangement surface 202 of the component 200 to be cooled, compared with Embodiment 1, the main process is substantially the same, except that, in step S30, the positive electrode layer 24 and / or the negative electrode layer 25 are bent and then welded on the component 200 to be cooled.

[0113] Example 5

[0114] In this embodiment, the second buffer layer 12 is a gradient film structure. From the diamond layer 11 to the metal substrate 13, there are the first gradient film layer, the second gradient film layer and the third gradient film layer. The first gradient film layer includes Ti and Mo with a mass percentage of 30:70; the second gradient film layer includes Ti and Mo with a mass percentage of 60:40; the third gradient film layer includes Ti and Mo with a mass percentage of 80:20. Compared with Example 1, the main process is roughly the same, except that in step S10, physical vapor deposition is performed on the metal substrate 13 of Cu material and a third gradient film layer with a first mass percentage of 80:20 of Ti and Mo is prepared, and then physical vapor deposition is performed on the third gradient film layer and a second gradient film layer with a mass percentage of 60:40 of Ti and Mo is prepared, and then physical vapor deposition is continued on the second gradient film layer and a third gradient film layer with a mass percentage of 30:70 of Ti and Mo is prepared, thereby forming the second buffer layer 12 of this embodiment. Other steps are not repeated here.

[0115] Example 6

[0116] In this embodiment, the second buffer layer 12 is a multi-layer composite structure, including multiple layers of titanium layers and titanium carbide layers alternately stacked. Compared with Example 1, the main process is roughly the same, except that in step S10, physical vapor deposition is performed on a metal substrate 13 made of Cu material to prepare a titanium layer, and then physical vapor deposition (such as sputtering deposition) is performed on the titanium layer to prepare a titanium carbide layer, and then a titanium layer and a titanium carbide layer are continuously prepared on the titanium carbide layer, and the process is repeated many times to finally form a second buffer layer 12 with a multi-layer composite structure. Other steps are not described in detail here.

[0117] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A diamond-based heat sink device, characterized in that: include: A diamond-based composite layer, comprising a diamond layer; Two composite electrode layers, the two composite electrode layers are connected to the diamond layer at intervals, and the two composite electrode layers are respectively used to connect different conductive ends of the components to be cooled; the buried depth of the two composite electrode layers in the diamond layer is a first preset depth, and the buried depth of the two composite electrode layers in the components to be cooled is a second preset depth, so that the distance between the components to be cooled and the relative surfaces of the diamond-based composite layer reaches a preset distance; The first preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, the second preset depth is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer, and the preset distance is greater than or equal to 0 and less than or equal to the thickness of the composite electrode layer.

2. The diamond-based heat sink device according to claim 1, characterized in that: The first preset depth is equal to the thickness of the composite electrode layer, the second preset depth is equal to 0, and the preset distance is equal to 0; or, The first preset depth is equal to 0, the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, The sum of the first preset depth and the second preset depth is equal to the thickness of the composite electrode layer, and the preset distance is equal to 0; or, The two composite electrode layers and the components to be cooled are respectively connected at different positions of the diamond layer at intervals, and the first preset depth is greater than or equal to 0, the second preset depth is equal to 0, and the preset distance is equal to 0; or, When the preset distance is greater than 0, thermal grease is filled between the diamond layer and the component to be cooled.

3. The diamond-based heat sink device according to claim 2, characterized in that: When the preset distance is equal to 0, the contact area between the component to be cooled and the diamond layer accounts for 0.1% to 90% of the cooling area of ​​the diamond layer.

4. The diamond-based heat sink device according to claim 1, characterized in that: The composite electrode layer comprises: a first buffer layer, the first buffer layer having a first surface and a second surface arranged opposite to each other, the first surface being in contact with the diamond layer; a conductive layer, the conductive layer being disposed on the second surface; a metal protection layer, the metal protection layer being arranged on a side of the conductive layer away from the first buffer layer; A positive electrode layer or a negative electrode layer, wherein the positive electrode layer or the negative electrode layer is arranged on a side of the metal protection layer away from the conductive layer, and the positive electrode layer or the negative electrode layer is connected to the conductive end of the component to be cooled.

5. The diamond-based heat sink device according to claim 4, characterized in that: The first buffer layer is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide; and / or, The conductive layer is copper or a copper-based composite material; and / or, The metal protective layer is gold or a gold-based composite material; and / or, The positive electrode layer and the negative electrode layer are gold or a gold alloy, wherein the mass content of gold is greater than or equal to 90%; and / or, The thickness of the first buffer layer is 0.1 μm to 2 μm; and / or, The thickness of the conductive layer is 1 μm to 50 μm; and / or, The thickness of the metal protective layer is 10 nm to 500 nm; and / or, The distance between the two farthest ends of the cross-sections of the positive electrode layer and the negative electrode layer is 0.50 mm to 3 mm.

6. The diamond-based heat sink device according to claim 1, characterized in that: The diamond-based composite layer further comprises: a second buffer layer, the second buffer layer being arranged on a side of the diamond layer away from the composite electrode layer; A metal substrate is disposed on a side of the second buffer layer away from the diamond layer.

7. The diamond-based heat sink device according to claim 6, characterized in that: The second buffer layer is selected from one or more of Ti, Mo, W, Ta, Si, titanium carbide, molybdenum carbide, tungsten carbide, tantalum carbide and silicon carbide; and / or, The metal substrate is copper or a copper-based composite material; and / or, The melting point of the metal substrate is greater than or equal to 700° C.; and / or, The thickness of the metal substrate is 0.5 mm to 5 mm; and / or, The thickness of the second buffer layer is 0.1 μm to 10 μm; and / or, The thickness of the diamond layer may be 0.1 μm to 50 μm.

8. The diamond-based heat sink device according to claim 4, characterized in that: The heat dissipation component has a heat conduction surface facing the diamond layer and a layout surface away from the diamond layer; The two composite electrode layers are connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the sides of the two composite electrode layers away from the diamond layer are respectively connected to the heat-conducting surface at intervals; or, One of the composite electrode layers is connected between the heat-conducting surface of the component to be cooled and the diamond layer, and the composite electrode layer is connected to the conductive end on the heat-conducting surface; the orthographic projection of the other composite electrode layer on the diamond layer is located outside the orthographic projection of the component to be cooled on the diamond layer, and the side of the other composite electrode layer away from the diamond layer is connected to the conductive end of the arrangement surface; or, The orthographic projections of the two composite electrode layers on the diamond layer are both located outside the orthographic projections of the components to be cooled on the diamond layer, and the sides of the two composite electrode layers away from the diamond layer are both connected to different conductive ends of the arrangement surface.

9. A method for preparing a diamond-based heat sink device as claimed in any one of claims 1 to 8, characterized in that: The preparation method comprises: providing a diamond-based composite layer having a diamond layer; According to the position of the composite electrode layer on the diamond-based composite layer and the first preset depth, at least one of a chemical vapor deposition method, a physical vapor deposition method and an electrochemical method combined with an etching method is used on the surface of the diamond layer to prepare two composite electrode layers; The composite electrode layer is connected to the component to be cooled according to the position of the composite electrode layer on the component to be cooled and the second preset depth.

10. The method for preparing a diamond-based heat sink device according to claim 9, characterized in that: After the composite electrode layer is connected to the component to be cooled, when the preset distance is greater than 0, thermal grease is filled between the diamond layer and the component to be cooled; and / or, The etching method includes a plasma etching process or a photolithography method; and / or, The diamond-based composite layer includes a diamond layer, a second buffer layer and a metal substrate. The diamond-based composite layer is prepared to provide the diamond-based composite layer with a diamond layer. A metal substrate is provided. The second buffer layer is prepared on the metal substrate by a physical vapor deposition method or a chemical vapor deposition method; and the diamond layer is prepared on the second buffer layer by a chemical vapor deposition method.

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