Display device

Abstract

The display device includes: a substrate; a first assembly line disposed on the substrate; a second group of assembly lines disposed on the substrate; a partition wall disposed on the first group of assembly lines and the second group of assembly lines and including assembly holes; a semiconductor light emitting device disposed in the assembly hole; a connection electrode disposed on a side portion of the semiconductor light emitting device; and an electrode wiring disposed on the upper side of the semiconductor light emitting device. Each of the first set of assembly lines and the second set of assembly lines includes: a first conductive electrode vertically overlapping the assembly hole; and a second conductive electrode connected to the first conductive electrode and vertically overlapping the semiconductor light emitting device.

Description

Technical Field

[0001] Embodiments relate to a display device. Background Art

[0002] Large-area displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays (Micro-LEDdisplay).

[0003] The micro LED display is a display using a micro LED, which is a semiconductor light emitting device having a diameter or a cross-sectional area of ​​100 μm or less, as a display device.

[0004] Micro LED displays use micro LEDs, which are semiconductor light-emitting devices, as display devices, so they have excellent performance in many characteristics such as light-to-dark ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency or brightness.

[0005] In particular, the micro-LED display can separate and combine screens in a modular manner, thereby having the advantages of free adjustment of size or resolution and the ability to achieve a flexible display.

[0006] However, a large-scale micro-LED display requires more than several million micro-LEDs, so there is a technical problem that it is difficult to quickly and accurately transfer the micro-LEDs to the display panel.

[0007] Recently developed transfer technologies include pick and place process, laser lift-off method or self-assembly method.

[0008] Among them, the self-assembly method, as a method for semiconductor light-emitting devices to find assembly positions in a fluid by themselves, is a method that is conducive to realizing large-screen display devices.

[0009] However, research on the technology of manufacturing displays through self-assembly of micro-LEDs is still incomplete.

[0010] In particular, in the prior art, when millions of semiconductor light-emitting devices are quickly transferred to a large display, although the transfer speed can be increased, the transfer error rate may increase, thereby causing a technical problem of reduced transfer yield.

[0011] In the related art, although a transfer process using a self-assembly method of dielectrophoresis (DEP) has been attempted, there is a problem of low self-assembly rate due to the non-uniformity of the dielectrophoresis force.

[0012] On the other hand, according to the non-disclosed internal technology, after the semiconductor light emitting device is assembled on the substrate by the self-assembly method, a subsequent process for electrically connecting the semiconductor light emitting device is performed.

[0013] Figure 1a and Figure 1b A display device showing non-disclosed internal technology.

[0014] like Figure 1a and Figure 1b As shown, after the semiconductor light emitting device 3 is assembled into the assembly hole 1H of the partition wall 1, the connection electrode 4 is formed on the side of the semiconductor light emitting device 3. Next, the insulating layer 5 is formed on the partition wall 1, and the electrode wiring 6 is connected to the upper side of the semiconductor light emitting device 3 through the contact hole 2.

[0015] By means of an exposure process, a contact hole 2 is formed on the semiconductor light emitting device 3. Figure 2a and Figure 2b As shown, a pattern mask 7 including a pattern hole 8 is located on the insulating layer 5. Thereafter, an alignment process is performed so that the pattern hole 8 is located at the center of the semiconductor light emitting device 3.

[0016] However, in the case where the exposure process is performed after the pattern hole 8 of the pattern mask 7 is shifted due to misalignment, the contact hole 2 is formed to expose the connection electrode 4. Figure 3 As shown, when the electrode wiring 6 is formed in the contact hole 2, the electrode wiring 6 is electrically short-circuited with the connection electrode 4. In this case, the semiconductor light emitting device 3 does not emit light, and there is a problem of poor light emission.

[0017] On the other hand, contact holes 2 having various sizes are generated depending on the position of the focal point of the beam spot during exposure. Figure 4 As shown in FIG. 1 , when the exposure process is performed after the beam spot is located on the upper side of the semiconductor light emitting device 3, a normal contact hole 2 is formed. Figure 4 As shown in b, when the beam spot is located above the upper side of the semiconductor light emitting device 3, the size of the contact hole 2 is very small and is treated as abnormal. Figure 4 As shown in Fig. c, when the beam spot is located inside the semiconductor light emitting device 3, the size of the contact hole 2 is very large and is treated as abnormal. Figure 4As shown in c, when the size of the contact hole 2 is larger than the size of the semiconductor light-emitting device 3, the top surface of the semiconductor light-emitting device 3 and the connecting electrode 4 are exposed, resulting in the problem of electrical short circuit between the electrode wiring 6 and the connecting electrode 4 as mentioned above. Summary of the invention

[0018] Problems to be solved by the invention

[0019] Embodiments are directed to solving the aforementioned problems and other problems.

[0020] Another object of an embodiment is to provide a display device.

[0021] In addition, another object of the embodiment is to provide a display device capable of preventing electrical short circuit defects.

[0022] In addition, another object of the embodiment is to provide a display device with a simple structure.

[0023] In addition, another object of the embodiment is to provide a display device capable of improving brightness.

[0024] In addition, another object of the embodiment is to provide a display device with a simple process.

[0025] In addition, another object of the embodiment is to provide a display device capable of strengthening the fixing force.

[0026] The technical problems of the embodiments are not limited to the technical problems described in the summary of the invention, but also include technical problems that can be understood through specific implementation.

[0027] Technical solutions to the problem

[0028] According to one aspect of an embodiment for achieving the above or another purpose, a display device includes: a substrate; a first group of assembly lines, arranged on the substrate; a second group of assembly lines, arranged on the substrate; a partition wall, arranged on the first group of assembly lines and the second group of assembly lines and including an assembly hole; a semiconductor light-emitting device, arranged on the assembly hole; a connecting electrode, arranged on the side of the semiconductor light-emitting device; and an electrode wiring, arranged on the upper side of the semiconductor light-emitting device; the first group of assembly lines and the second group of assembly lines each include: a first conductive electrode, vertically overlapping with the assembly hole; and a second conductive electrode, connected to the first conductive electrode and vertically overlapping with the semiconductor light-emitting device.

[0029] The substrate includes a first sub-pixel, a second sub-pixel and a third sub-pixel; the semiconductor light-emitting device includes: at least one first semiconductor light-emitting device, configured in the first sub-pixel; at least one second semiconductor light-emitting device, configured in the second sub-pixel; and at least one third semiconductor light-emitting device, configured in the third sub-pixel; the first semiconductor light-emitting device, the second semiconductor light-emitting device and the third semiconductor light-emitting device can emit different lights respectively.

[0030] The electrode wiring may be commonly connected to the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device.

[0031] The connecting electrode may include: a first connecting electrode, arranged at the periphery of the first semiconductor light-emitting device of the first sub-pixel; a second connecting electrode, arranged at the periphery of the second semiconductor light-emitting device of the second sub-pixel; and a third connecting electrode, arranged at the periphery of the third semiconductor light-emitting device of the third sub-pixel.

[0032] The first semiconductor light emitting device, the second semiconductor light emitting device and the third semiconductor light emitting device each include: a light emitting layer; and a side electrode extending from the lower side of the light emitting layer and arranged on the side of the light emitting layer; the first connecting electrode, the second connecting electrode and the third connecting electrode can respectively contact the side electrode.

[0033] The first connection electrode, the second connection electrode, and the third connection electrode may be connected to at least one of the first group assembly line and the second group assembly line, respectively.

[0034] The first connection electrode, the second connection electrode, and the third connection electrode may be in contact with the first conductive electrode, respectively.

[0035] The first connection electrode, the second connection electrode, and the third connection electrode may be in contact with the second conductive electrode, respectively.

[0036] The electrode wiring may be disposed on the first semiconductor light emitting device, the second semiconductor light emitting device, the third semiconductor light emitting device, and the partition wall.

[0037] The electrode wiring may be in contact with a top surface of each of the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device.

[0038] Top surfaces of the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device may be located on the same horizontal line as a top surface of the partition wall.

[0039] At least one of the first group of assembly lines and the second group of assembly lines may be an anode electrode, and the electrode wiring may be a cathode electrode.

[0040] The first conductive electrode may be a metal electrode.

[0041] The second conductive electrode may be a transparent electrode, and the electrode wiring may be a reflective electrode.

[0042] The second conductive electrode may be a reflective electrode, and the electrode wiring may be a transparent electrode.

[0043] The semiconductor light emitting device may have an inclined surface such that a size of a lower side is larger than a size of an upper side.

[0044] Effects of the Invention

[0045] like Figure 1a and Figure 1b As shown in FIG. 1 , in the case where an insulating layer 5 is formed on the semiconductor light emitting device 3, in order to electrically connect the upper side of the semiconductor light emitting device 3, a contact hole 2 may be formed at a position of the insulating layer 5 corresponding to the upper side of the semiconductor light emitting device 3. Figure 2a and Figure 2b As shown in FIG. 1 , if the exposure process is performed in a state where the pattern mask 7 is not aligned, the contact hole 2 exposing the connection electrode 4 may be formed at a position deviated from the center of the semiconductor light emitting device 3. In this case, as shown in FIG. Figure 3 As shown, the electrode wiring 6 and the connection electrode 4 are electrically short-circuited, resulting in a lighting failure in which the semiconductor light emitting device 3 does not emit light.

[0046] According to an embodiment, Figures 11 to 13 As shown, the electrode wiring 360 can be directly connected to the upper side of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 without penetrating an additional insulating layer. That is, no additional insulating layer is formed on the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3. For example, since the top surface of the second insulating layer 350 formed in the first assembly hole 340H1, the second assembly hole 340H2 and the third assembly hole 340H3 are located on the same horizontal line as the top surfaces of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3, the second insulating layer 350 is not formed on the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3.

[0047] In this case, by configuring the electrode wiring 360 on the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3, the electrode wiring 360 can directly contact the top surface of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 without the obstruction of an additional insulating layer. Figures 2a to 3 As shown, in the case where the insulating layer 5 formed on the semiconductor light emitting device 3 is located at a wrong position instead of a correct position due to the misalignment of the pattern mask 7, an electrical short circuit may occur between the electrode wiring 6 and the connection electrode 4 due to the corresponding contact hole 2. However, the electrical short circuit problem can be solved by the structure of the embodiment.

[0048] On the other hand, Figures 11 to 13 as well as Fig.25 As shown, the electrode wiring 360 is integrally formed on the display area DA of the display panel 10, and the electrode wiring 360 can be used as a cathode electrode. For example, a fixed voltage, for example, a reference voltage of 0V, can be supplied to the electrode wiring 360. Therefore, it is not necessary to separate the electrode wiring 360 connected to the upper side of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 to insulate each other. Thus, the electrode wiring 360 is formed by depositing a conductive film on the display area DA of the display panel 10, so the structure is simple and the process is easy.

[0049] On the other hand, Fig.15 and Fig.16 As shown, by reflecting a portion of the light generated in the first semiconductor light emitting device 150-1 (the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 are the same), it helps to output the light in a specific direction, that is, the front direction or the rear direction, thereby improving the brightness.

[0050] The applicable additional scope of the embodiment can become more clear through the following detailed description. However, those skilled in the art can clearly understand the various changes and modifications within the thought and scope of the embodiment, so it should be understood that the detailed description and specific embodiments such as the preferred embodiment are only exemplary. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] Figure 1a and Figure 1b A display device showing non-disclosed internal technology.

[0052] Figure 2a and Figure 2b The diagram shows a situation where a contact hole is formed to expose a connection electrode due to misalignment.

[0053] Figure 3 The diagram shows a situation where the electrode wiring is electrically short-circuited with the connection electrode through the contact hole.

[0054] Figure 4 Various contact holes formed by the contact hole forming step are shown.

[0055] Figure 5 The living room of a house in which the display device according to the embodiment is installed is shown.

[0056] Figure 6 is a block diagram schematically showing a display device according to an embodiment.

[0057] Figure 7 It is shown Figure 6 A circuit diagram of an example of a pixel.

[0058] Figure 8 yes Figure 5 An enlarged view of the first panel area in the display device.

[0059] Fig. 9 yes Figure 8 Magnified view of the A2 area.

[0060] Fig.10 FIG. 1 is a diagram showing an example in which the light emitting device according to the embodiment is assembled onto a substrate by a self-assembly method.

[0061] Fig.11 1 is a plan view showing a display device according to the embodiment.

[0062] Fig.12 It is a top view showing the display device of the embodiment in more detail.

[0063] Fig.13 is along Fig.12 A cross-sectional view of a display device of an embodiment taken along line C1-C2.

[0064] Fig.14 is a cross-sectional view showing a first semiconductor light emitting device of the embodiment.

[0065] Fig.15 The display device of the embodiment shows a case where an image is displayed according to a bottom emission method.

[0066] Fig.16 The display device of the embodiment shows a case where an image is displayed according to a top emission method.

[0067] Figures 17 to 24 It is a cross-sectional view showing the manufacturing process of the display device of the embodiment.

[0068] Fig.25is a block diagram showing a display device according to an embodiment.

[0069] The sizes, shapes, values, etc. of the plurality of components shown in the drawings may be different from the actual ones. In addition, even if the same component is shown in different sizes, shapes, values, etc. in each drawing, this is only an example in the drawing, and the same component may have the same size, shape, value, etc. in each drawing. DETAILED DESCRIPTION

[0070] Hereinafter, the embodiments disclosed in this specification are described in detail with reference to the accompanying drawings, and the same or similar constituent elements are given the same figure numbers regardless of the figure numbers, and repeated descriptions thereof are omitted. The suffixes "module" and "unit" of the constituent elements used in the following description are given or mixed for the sake of easy writing of the specification, and they themselves do not have meanings or functions that distinguish each other. In addition, the accompanying drawings are used to make the embodiments disclosed in this specification easy to understand, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when it is mentioned that an element such as a layer, a region or a substrate exists "on" another constituent element, it should be understood that it can exist directly on another element, or there can be other intermediate elements between them.

[0071] The display device described in this specification may include a TV, a sign, a mobile phone, a smart phone, a HUD (head-up display) for a car, a backlight unit for a laptop computer, a display for VR or AR, etc. However, the configuration of the embodiments described in this specification may also be applied to a display device in the form of a new product developed in the future.

[0072] Hereinafter, a light emitting device according to an embodiment and a display device including the light emitting device will be described.

[0073] Figure 5 The living room of a house in which the display device according to the embodiment is installed is shown.

[0074] Reference Figure 5 The display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a sweeping robot 102, and an air purifier 103, can communicate with each electronic product based on IOT, and can also control each electronic product based on user setting data.

[0075] The display device 100 of the embodiment may include a flexible display manufactured on a thin and flexible substrate. The flexible display can not only maintain the characteristics of an existing flat panel display, but also be able to be bent or rolled like paper.

[0076] In a flexible display, visual information can be realized by individually controlling the light emission of unit pixels (unitpixel) configured in a matrix form. Unit pixel refers to the smallest unit for realizing a color. The unit pixel of the flexible display can be realized by a light-emitting device. In an embodiment, the light-emitting device can be a Micro-LED (micrometer-level light-emitting diode) or a Nano-LED (nano-level light-emitting diode), but is not limited thereto.

[0077] Figure 6 is a block diagram schematically showing a display device of an embodiment, Figure 7 It is shown Figure 6 A circuit diagram of an example of a pixel.

[0078] Reference Figure 6 and Figure 7 The display device of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0079] The display device 100 of the embodiment may drive the light emitting devices in an active matrix (AM) mode or a passive matrix (PM) mode.

[0080] The driving circuit 20 may include a data driving section 21 and a timing control section 22 .

[0081] The display panel 10 may be formed in a rectangular shape, but is not limited thereto. That is, the display panel 10 may be formed in a circular shape or an elliptical shape. At least one side of the display panel 10 may be formed to be curved with a prescribed curvature.

[0082] The display panel 10 may be divided into a display area DA and a non-display area NDA arranged around the display area DA. The display area DA is an area where a plurality of pixels PX are formed to display an image. The display panel 10 may include a plurality of data lines D1 to Dm (m is an integer greater than or equal to 2), a plurality of scan lines S1 to Sn (n is an integer greater than or equal to 2) intersecting the plurality of data lines D1 to Dm, a high potential voltage line VDDL supplied with a high potential voltage, a low potential voltage line VSSL supplied with a low potential voltage VSS, and a plurality of pixels PX connected to the plurality of data lines D1 to Dm and the plurality of scan lines S1 to Sn.

[0083] Each of the plurality of pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light of a first main wavelength, the second sub-pixel PX2 may emit a second color light of a second main wavelength, and the third sub-pixel PX3 may emit a third color light of a third main wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but are not limited thereto. In addition, Figure 6 It is illustrated that each of the plurality of pixels PX includes three sub-pixels, but the present invention is not limited thereto. That is, each of the plurality of pixels PX may include more than four sub-pixels.

[0084] Each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may be connected to at least one of the plurality of data lines D1-Dm, at least one of the plurality of scan lines S1-Sn, and a high potential voltage line VDDL. Figure 7 As shown, the first subpixel PX1 may include a plurality of light emitting devices LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0085] Although not shown, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include only one light emitting device LD and at least one capacitor Cst.

[0086] Each of the plurality of light emitting devices LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers and a second electrode. Here, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode, but is not limited thereto.

[0087] The light emitting device LD may be one of a horizontal type light emitting device, a flip chip type light emitting device, and a vertical type light emitting device.

[0088] like Figure 7 As shown, the plurality of transistors may include: a driving transistor DT, supplying current to the plurality of light emitting devices LD; and a scanning transistor ST, supplying a data voltage to the gate electrode of the driving transistor DT. The driving transistor DT may include: a gate electrode connected to the source electrode of the scanning transistor ST; a source electrode connected to a high potential voltage line VDDL to which a high potential voltage is applied; and a drain electrode connected to the plurality of first electrodes of the plurality of light emitting devices LD. The scanning transistor ST may include: a gate electrode connected to the scanning line Sk (k is an integer satisfying 1≤k≤n); a source electrode connected to the gate electrode of the driving transistor DT; and a drain electrode connected to the data line Dj (j is an integer satisfying 1≤j≤m).

[0089] The capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst charges a difference between the gate voltage and the source voltage of the driving transistor DT.

[0090] The driving transistor DT and the scanning transistor ST may be formed by thin film transistors. Figure 7 In the embodiment, the driving transistor DT and the scanning transistor ST are described with the focus on being formed by a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto. The driving transistor DT and the scanning transistor ST may also be formed by an N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of the driving transistor DT and the scanning transistor ST may be changed.

[0091] In addition, Figure 7 In the embodiment, each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is illustrated as including a 2T1C (2Transistor-1capacitor, two transistors and one capacitor) having a driving transistor DT, a scanning transistor ST, and a capacitor Cst, but the present invention is not limited thereto. Each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0092] The second sub-pixel PX2 and the third sub-pixel PX3 may be represented by substantially the same circuit diagram as the first sub-pixel PX1 , and thus detailed description thereof will be omitted.

[0093] The driving circuit 20 outputs a plurality of signals and a plurality of voltages for driving the display panel 10. To this end, the driving circuit 20 may include a data driving part 21 and a timing control part 22.

[0094] The data driving part 21 receives the digital video data DATA and the source control signal DCS from the timing control part 22. The data driving part 21 converts the digital video data DATA into a plurality of analog data voltages according to the source control signal DCS and supplies the analog data voltages to the plurality of data lines D1Dm of the display panel 10.

[0095] The timing control unit 22 receives digital video data DATA and a plurality of timing signals from a host system. The plurality of timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smartphone or a tablet PC, a display, a system-on-chip of a TV, etc.

[0096] The timing control unit 22 generates control signals for controlling the operation timing of the data driving unit 21 and the scan driving unit 30. The plurality of control signals may include a source control signal DCS for controlling the operation timing of the data driving unit 21 and a scan control signal SCS for controlling the operation timing of the scan driving unit 30.

[0097] The driving circuit 20 may be disposed in a non-display area NDA provided on one side of the display panel 10. The driving circuit 20 is formed by an integrated circuit (IC) and may be mounted on the display panel 10 in a COG (chip on glass) manner, a COP (chip on plastic) manner, or an ultrasonic bonding manner, but the present invention is not limited thereto. For example, the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10.

[0098] The data driving unit 21 may be mounted on the display panel 10 by a COG (chip on glass) method, a COP (chip on plastic) method, or an ultrasonic bonding method, and the timing control unit 22 may be mounted on a circuit board.

[0099] The scan driving unit 30 receives a scan control signal SCS from the timing control unit 22. The scan driving unit 30 generates a plurality of scan signals according to the scan control signal SCS and supplies the scan signals to the plurality of scan lines S1 to Sn of the display panel 10. The scan driving unit 30 includes a plurality of transistors and may be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving unit 30 may be formed by an integrated circuit, in which case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0100] The circuit board can be attached to a plurality of pads disposed on one side edge of the display panel 10 using an anisotropic conductive film. Therefore, a plurality of leads of the circuit board can be electrically connected to the plurality of pads. The circuit board can be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board can be bent toward the lower portion of the display panel 10. Therefore, one side of the circuit board can be attached to one side edge of the display panel 10, and the other side can be configured at the lower portion of the display panel 10, and can be connected to a system board on which a host system is installed.

[0101] The power supply circuit 50 can generate a plurality of voltages required for driving the display panel 10 from the main power applied from the system board and supply them to the display panel 10. For example, the power supply circuit 50 can generate a high potential voltage VDD and a low potential voltage VSS for driving a plurality of light emitting devices LD of the display panel 10 from the main power, and supply them to a high potential voltage line VDDL and a low potential voltage line VSSL of the display panel 10. In addition, the power supply circuit 50 can generate and supply a driving voltage for driving the driving circuit 20 and the scanning driving section 30 from the main power.

[0102] Figure 8 yes Figure 3 An enlarged view of the first panel area in the display device.

[0103] Reference Figure 8 The display device 100 of the embodiment may be manufactured by mechanically and electrically connecting a plurality of panel regions such as the first panel region A1 through tiling.

[0104] The first panel area A1 may include a unit pixel ( Figure 6 A plurality of semiconductor light emitting devices 150 configured with PX).

[0105] For example, the unit pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. For example, a plurality of red semiconductor light emitting devices 150R may be configured in the first sub-pixel PX1, a plurality of green semiconductor light emitting devices 150G may be configured in the second sub-pixel PX2, and a plurality of blue semiconductor light emitting devices 150B may be configured in the third sub-pixel PX3. The unit pixel PX may also include a fourth sub-pixel not configured with a semiconductor light emitting device, but is not limited thereto.

[0106] Fig. 9 yes Figure 8Magnified view of the A2 area.

[0107] Reference Fig. 9 The display device 100 of the embodiment may include a substrate 200, assembly lines 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. More components may be included.

[0108] The group assembly line may include a first group assembly line 201 and a second group assembly line 202 that are separated from each other. The first group assembly line 201 and the second group assembly line 202 may generate a dielectrophoretic force (DEP force) for assembling the semiconductor light emitting device 150. For example, the semiconductor light emitting device 150 may be one of a horizontal type semiconductor light emitting device, a flip chip type semiconductor light emitting device, and a vertical type semiconductor light emitting device.

[0109] In order to realize each unit pixel (sub-pixel), the semiconductor light emitting device 150 may include a red semiconductor light emitting device 150, a green semiconductor light emitting device 150G and a blue semiconductor light emitting device 150B, but is not limited thereto and may also have a red phosphor and a green phosphor to realize red and green respectively.

[0110] The substrate 200 may be a supporting member that supports a plurality of components disposed on the substrate 200 , or may be a protecting member that protects a plurality of components.

[0111] The substrate 200 may be a rigid substrate or a flexible substrate. The substrate 200 may be formed of sapphire, glass, silicon or polyimide. In addition, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate) and PET (Polyethylene Terephthalate). In addition, the substrate 200 may be a transparent material, but is not limited thereto. The substrate 200 may function as a supporting substrate in the display panel, and may also function as an assembly substrate when the light-emitting device is self-assembled.

[0112] The substrate 200 may be provided with Figure 6 and Figure 7 The circuits in the sub-pixels PX1 , PX2 , and PX3 are shown as backplanes such as transistors ST, DT, capacitors Cst, and signal wirings, but are not limited thereto.

[0113] The insulating layer 206 may include an organic material having insulation and flexibility such as polyimide, PAC, PEN, PET, polymer, or an inorganic material such as silicon oxide (SiO2) or silicon nitride (SiNx), and may also be formed integrally with the substrate 200 to form a single substrate.

[0114] The insulating layer 206 may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer is flexible, thereby realizing the flexible function of the display device. For example, the insulating layer 206 may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer having conductivity in a direction perpendicular to the thickness and electrical insulation in a direction horizontal to the thickness.

[0115] The insulating layer 206 may include an assembly hole 203 for inserting the semiconductor light emitting device 150. Therefore, during self-assembly, the semiconductor light emitting device 150 may be easily inserted into the assembly hole 203 of the insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, etc. The assembly hole 203 may also be referred to as a hole.

[0116] The assembly hole 203 may be referred to as a hole, a slot, a groove, a recess, a pocket, or the like.

[0117] The assembly hole 203 may be different according to the shape of the semiconductor light emitting device 150. For example, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may have different shapes, respectively, and the assembly hole 203 may have a shape corresponding to the shape of each of these semiconductor light emitting devices. For example, the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. For example, the red semiconductor light emitting device may have a circular shape, the green semiconductor light emitting device may have a first elliptical shape including a first short axis and a second long axis, and the blue semiconductor light emitting device may have a second elliptical shape including a second short axis and a second long axis, but is not limited thereto. The second long axis of the ellipse of the blue semiconductor light emitting device may be greater than the second long axis of the ellipse of the green semiconductor light emitting device, and the second short axis of the ellipse of the blue semiconductor light emitting device may be smaller than the first short axis of the ellipse of the green semiconductor light emitting device.

[0118] On the other hand, the semiconductor light emitting device 150 can be mounted on the substrate 200 by, for example, a self-assembly method ( Fig.10 ) and transfer methods, etc.

[0119] Fig.10FIG. 1 is a diagram showing an example in which the light emitting device according to the embodiment is assembled onto a substrate by a self-assembly method.

[0120] based on Fig.10 An example in which the semiconductor light emitting device of the embodiment is assembled to a display panel by a self-assembly method using an electromagnetic field is described.

[0121] The assembly substrate 200 described later may function as a panel substrate 200 a in a display device after the light emitting device is assembled, but the embodiment is not limited thereto.

[0122] Reference Fig.10 , the semiconductor light emitting device 150 can be put into the chamber 1300 filled with the fluid 1200, and the semiconductor light emitting device 150 can be moved to the assembly substrate 200 by the magnetic field generated by the assembly device 1100. At this time, the light emitting device 150 close to the assembly hole 207H of the assembly substrate 200 can be assembled to the assembly hole 207H by the dielectrophoretic force generated by the electric field of the plurality of assembly lines. The fluid 1200 can be water, such as ultrapure water, etc., but is not limited thereto. The chamber can be called a water tank, a container, a vessel, etc.

[0123] After the semiconductor light emitting device 150 is introduced into the chamber 1300, the assembly substrate 200 may be disposed on the chamber 1300. According to an embodiment, the assembly substrate 200 may also be introduced into the chamber 1300.

[0124] The semiconductor light emitting device 150 may include a magnetic layer (not shown) having a magnetic body. The magnetic layer may include a magnetic metal such as nickel (Ni). Since the semiconductor light emitting device 150 put into the fluid includes a magnetic layer, it can be moved to the assembly substrate 200 by the magnetic field generated by the assembly device 1100. The magnetic layer may be arranged on the upper side, the lower side, or both sides of the light emitting device.

[0125] The semiconductor light emitting device 150 may include a passivation layer surrounding the top surface and the side surface. The passivation layer may be formed of an inorganic insulator such as silicon dioxide or aluminum oxide by plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), sputtering deposition, etc. In addition, the passivation layer may be formed by a method of spin coating an organic material such as a photoresist or a polymer substance.

[0126] The semiconductor light emitting device 150 may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed therebetween. The first conductive semiconductor layer may be an n-type semiconductor layer, and the second conductive semiconductor layer may be a p-type semiconductor layer, but is not limited thereto. The first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer disposed therebetween may constitute a light emitting portion. The light emitting portion may be referred to as a light emitting layer, a light emitting region, etc.

[0127] The first electrode (layer) may be disposed below the first conductive semiconductor layer, and the second electrode (layer) may be disposed above the second conductive semiconductor layer. For this purpose, a portion of the first conductive semiconductor layer or the second conductive semiconductor layer may be exposed to the outside. Thus, in the manufacturing process of the display device after the semiconductor light emitting device 150 is assembled on the assembly substrate 200, a portion of the passivation layer may be etched.

[0128] The first electrode may include at least one or more layers. For example, the first electrode may include an ohmic layer, a reflective layer, a magnetic layer, a conductive layer, an oxidation prevention layer, an adhesive layer, etc. The ohmic layer may include Au, AuBe, etc. The reflective layer may include Al, Ag, etc. The magnetic layer may include Ni, Co, etc. The conductive layer may include Cu, etc. The oxidation prevention layer may include Mo, etc. The adhesive layer may include Cr, Ti, etc.

[0129] The second electrode may include a transparent conductive layer. For example, the second electrode may include ITO, IZO, etc.

[0130] The assembly substrate 200 may include a pair of first assembly lines 201 and second assembly lines 202, respectively corresponding to the semiconductor light emitting devices 150 to be assembled. The first assembly lines 201 and the second assembly lines 202 may be formed by multiple layers of a single metal or a metal alloy or a metal oxide. For example, the first assembly lines 201 and the second assembly lines 202 may each be formed by at least one of Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf, and are not limited thereto.

[0131] The first assembly line 201 and the second assembly line 202 may form an electric field when an AC voltage is applied, and the semiconductor light emitting device 150 may be fixed to the assembly hole 207H by the dielectrophoretic force generated by the electric field. The interval between the first assembly line 201 and the second assembly line 202 may be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 207H, so that the assembly position of the semiconductor light emitting device 150 using the electric field can be fixed more accurately.

[0132] An insulating layer 215 is formed on the first assembly line 201 and the second assembly line 202, which can protect the first assembly line 201 and the second assembly line 202 from the influence of the fluid 1200 and prevent the leakage of the current flowing in the first assembly line 201 and the second assembly line 202. For example, the insulating layer 215 can be formed of an inorganic insulator such as silicon dioxide, aluminum oxide, or an organic insulator as a single layer or multiple layers. The insulating layer 215 can have a minimum thickness for preventing the first assembly line 201 and the second assembly line 202 from being damaged when assembling the semiconductor light-emitting device 150, and can have a maximum thickness for stably assembling the semiconductor light-emitting device 150.

[0133] A partition wall 207 may be formed on the upper portion of the insulating layer 215 . A portion of the partition wall 207 may be located above the first and second assembly lines 201 and 202 , and the remaining portion may be located above the assembly substrate 200 .

[0134] On the other hand, when manufacturing the assembly substrate 200 , by removing a portion of the partition wall formed on the upper portion of the insulating layer 215 , an assembly hole 207H for each semiconductor light emitting device 150 to be coupled and assembled to the assembly substrate 200 may be formed.

[0135] The assembly substrate 200 is formed with assembly holes 207H for combining the plurality of semiconductor light emitting devices 150, and the surface formed with the assembly holes 207H can be in contact with the fluid 1200. The assembly holes 207H can guide the accurate assembly position of the semiconductor light emitting device 150.

[0136] On the other hand, the assembly hole 207H may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 to be assembled to the corresponding position, thereby preventing other semiconductor light emitting devices from being assembled to the assembly hole 207H or plural semiconductor light emitting devices from being assembled to the assembly hole 207H.

[0137] Re-reference Fig.10 After the assembly substrate 200 is disposed in the chamber, the assembly device 1100 applying a magnetic field may move along the assembly substrate 200. The assembly device 1100 may be a permanent magnet or an electromagnet.

[0138] In order to maximize the area affected by the magnetic field within the fluid 1200, the assembly device 1100 may move in contact with the assembly substrate 200. According to an embodiment, the assembly device 1100 may include a plurality of magnetic bodies, or may also include a magnetic body having a size corresponding to the assembly substrate 200. In this case, the moving distance of the assembly device 1100 may also be limited within a specified range.

[0139] Under the effect of the magnetic field generated by the assembly apparatus 1100 , the semiconductor light emitting device 150 within the chamber 1300 may move toward the assembly apparatus 1100 and the assembly substrate 200 .

[0140] When the semiconductor light emitting device 150 moves toward the assembly device 1100 , it can enter the assembly hole 207H and be fixed under the action of the dielectrophoretic force formed by the electric field between the assembly lines 201 and 202 .

[0141] Specifically, the first assembly line 201 and the second assembly line 202 can use an AC power supply to form an electric field, and the electric field can be used to form a dielectrophoretic force between the assembly lines 201 and 202. The semiconductor light emitting device 150 can be fixed to the assembly hole 207H on the assembly substrate 200 by using the dielectrophoretic force.

[0142] At this time, a predetermined solder layer (not shown) is formed between the light emitting device 150 mounted on the mounting hole 207H of the mounting substrate 200 and the assembly wires 201 and 202 , and the bonding strength of the light emitting device 150 can be improved.

[0143] In addition, after assembly, a mold layer (not shown) may be formed in the assembly hole 207H of the assembly substrate 200. The mold layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0144] By using the above-mentioned self-assembly method using an electromagnetic field, the time required to assemble each semiconductor light-emitting device to a substrate can be greatly shortened, thereby enabling a large-area high-pixel display to be realized more quickly and economically.

[0145] Below, refer to Figures 11 to 25 , various embodiments for solving the above problems are described. The following omitted description can be seen from FIG. Fig.10 It can be easily understood by referring to the above description related to the accompanying drawings.

[0146] Fig.11 1 is a plan view showing a display device according to the embodiment. Fig.12 It is a top view showing the display device of the embodiment in more detail.

[0147] like Fig.11 and Fig.12 As shown, the unit pixel PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .

[0148] The display device 300 of the embodiment may include at least one first semiconductor light emitting device 150 - 1 , at least one second semiconductor light emitting device 150 - 2 , and at least one third semiconductor light emitting device 150 - 3 in order to display an image.

[0149] At least one first semiconductor light emitting device 150 - 1 may be disposed in the first subpixel PX1 , at least one second semiconductor light emitting device 150 - 2 may be disposed in the second subpixel PX2 , and at least one third semiconductor light emitting device 150 - 3 may be disposed in the third subpixel PX3 .

[0150] The first subpixel PX1 may include a first assembly hole 340H1, the second subpixel PX2 may include a second assembly hole 340H2, and the third subpixel PX3 may include a third assembly hole 340H3. The first semiconductor light emitting device 150-1 may be configured in the first assembly hole 340H1 of the first subpixel PX1, the second semiconductor light emitting device 150-2 may be configured in the second assembly hole 340H2 of the second subpixel PX2, and the third semiconductor light emitting device 150-3 may be configured in the third assembly hole 340H3 of the third subpixel PX3.

[0151] The display device 300 of the embodiment may include an electrode wiring 360. The electrode wiring 360 may be configured on the entire area of ​​the unit pixel PX. That is, the electrode wiring 360 may be configured on the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3. For example, the electrode wiring 360 may be configured on the first semiconductor light emitting device 150-1 of the first sub-pixel PX1, the second semiconductor light emitting device 150-2 of the second sub-pixel PX2, and the third semiconductor light emitting device 150-3 of the third sub-pixel PX3.

[0152] The electrode wiring 360 may have a plate shape. For example, the bottom surface and / or the top surface of the electrode wiring 360 may have a horizontal surface. For example, as the metal film is deposited over the entire area of ​​the unit pixel PX, the electrode wiring 360 having a plate shape may be formed. Therefore, there is no need to perform an additional patterning process after deposition, so the process is simple and the process time can be shortened.

[0153] The electrode wiring 360 may be a cathode electrode. The electrode wiring 360 may be commonly connected to the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3. For example, from the low potential voltage line ( Figure 7 The VSSL supply is a low potential voltage ( Figure 6 The low potential voltage may be supplied to the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3, respectively, through the electrode wiring 360. For example, the low potential voltage may be 0V or a voltage lower than 0V.

[0154] The display device 300 of the embodiment may include a plurality of connection electrodes 370-1, 370-2, and 370-3. The plurality of connection electrodes may include a first connection electrode 370-1, a second connection electrode 370-2, and a third connection electrode 170-3. The first connection electrode 370-1 may be disposed on a side of the first semiconductor light emitting device 150-1, the second connection electrode 370-2 may be disposed on a side of the second semiconductor light emitting device 150-2, and the third connection electrode 370-3 may be disposed on a side of the third semiconductor light emitting device 150-3.

[0155] The first connection electrode 370-1 may be disposed in the first assembly hole 340H1 of the first sub-pixel PX1. For example, the first connection electrode 370-1 may be disposed at the periphery of the first semiconductor light emitting device 150-1 in the first assembly hole 340H1. The second connection electrode 370-2 may be disposed in the second assembly hole 340H2 of the second sub-pixel PX2. For example, the second connection electrode 370-2 may be disposed at the periphery of the second semiconductor light emitting device 150-2 in the second assembly hole 340H2. The third connection electrode 170-3 may be disposed in the third assembly hole 340H3 of the third sub-pixel PX3. For example, the third connection electrode 170-3 may be disposed at the periphery of the third semiconductor light emitting device 150-3 in the third assembly hole 340H3.

[0156] On the other hand, the display device 300 of the embodiment may include a plurality of signal lines SL1 to SL4 , and the plurality of signal lines may include a first signal line SL1 , a second signal line SL2 , a third signal line SL3 , and a fourth signal line SL4 .

[0157] The first signal line SL1 may be connected to the first connection electrode 370-1 of the first subpixel PX1, the second signal line SL2 may be connected to the second connection electrode 370-2 of the second subpixel PX2, and the third signal line SL3 may be connected to the third connection electrode 170-3 of the third subpixel PX3. For example, the first signal line SL1 may be connected to the first connection electrode 370-1 connected to the side of the first semiconductor light emitting device 150-1 in the first subpixel PX1. For example, the second signal line SL2 may be connected to the second connection electrode 370-2 connected to the side of the second semiconductor light emitting device 150-2 in the second subpixel PX2. For example, the third signal line SL3 may be connected to the third connection electrode 170-3 connected to the side of the third semiconductor light emitting device 150-3 in the third subpixel PX3.

[0158] The first signal line SL1, the second signal line SL2, and the third signal line SL3 may be connected via Figure 6 and Figure 7The scanning transistor ST and the driving transistor DT shown in the figure are connected to the first data line D1, the second data line D2 and the third data line D3 respectively. For example, the first signal line SL1, the second signal line SL2 and the third signal line SL3 can be connected to the drain terminal of the driving transistor DT respectively, and the high potential voltage line VDDL supplying the high potential voltage VDD can be connected to the source terminal of the driving transistor DT.

[0159] The fourth signal line SL4 may be connected to the electrode wiring 360 commonly connected to the upper side of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3. In addition, the fourth signal line SL4 may be connected to the low potential voltage line VSSL. Thus, the low potential voltage ( Figure 6 The VSS) may be supplied to the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 via the low potential voltage line VSSL, the fourth signal line SL4, and the electrode wiring 360, respectively.

[0160] As an example, the fourth signal line SL4 may be formed integrally with the electrode wiring 360. In this case, the fourth signal line SL4 and the electrode wiring 360 may be located on the same horizontal plane. For example, the fourth signal line SL4 and the electrode wiring 360 may be formed simultaneously using the same patterning process. For example, by depositing and patterning a metal film on the substrate 310, the electrode wiring 360 and the fourth signal line SL4 extending from the electrode wiring 360 may be simultaneously formed on the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3.

[0161] As another example, the fourth signal line SL4 may not be formed integrally with the electrode wiring 360. In this case, the fourth signal line SL4 and the electrode wiring 360 may be arranged on different layers. That is, the fourth signal line SL4 may be electrically connected to the electrode wiring 360 through a contact hole.

[0162] The high potential voltage lines VDDL connected to the first, second, and third subpixels PX1, PX2, and PX3 may be supplied with the same high potential voltage VDD. The low potential voltage lines VSSL connected to the first, second, and third subpixels PX1, PX2, and PX3 may be supplied with the same low potential voltage VSS.

[0163] In this case, the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may respectively determine the brightness of the light of the first semiconductor light emitting device 150-1 of the first subpixel PX1, the second semiconductor light emitting device 150-2 of the second subpixel PX2, and the third semiconductor light emitting device 150-3 of the third subpixel PX3 based on the same potential value, that is, the potential value equivalent to the potential difference between the high potential voltage VDD and the low potential voltage VSS according to the first data voltage, the second data voltage, and the third data voltage. That is, the brightness of the light of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 may respectively be determined by the driving current flowing in the driving transistor DT of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 according to the first data voltage, the second data voltage, and the third data voltage.

[0164] For example, according to the first data voltage, a first driving current flows in the driving transistor DT of the first subpixel PX1, and the first semiconductor light emitting device 150-1 can emit a first light having a first brightness corresponding to the first driving current. For example, according to the second data voltage, a second driving current flows in the driving transistor DT of the second subpixel PX2, and the second semiconductor light emitting device 150-2 can emit a second light having a second brightness corresponding to the second driving current. For example, according to the third data voltage, a third driving current flows in the driving transistor DT of the third subpixel PX3, and the third semiconductor light emitting device 150-3 can emit a third light having a third brightness corresponding to the third driving current. For example, the first light may be red light, the second light may be green light, and the third light may be blue light.

[0165] On the other hand, since the brightness is determined by the driving current, if the driving current is to be increased, the potential difference between the low potential voltage VSS and the high potential voltage VDD can be increased. For example, when the low potential voltage VSS is 0V, by increasing the high potential voltage VDD, the driving current can be increased, and thus the brightness can also be increased. That is, by adjusting the potential difference between the low potential voltage VSS and the high potential voltage VDD, the brightness can be adjusted.

[0166] For example, the first semiconductor light emitting device 150-1 may be made of a compound semiconductor material including GaAs to emit red light, but is not limited thereto. For example, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 may be made of a compound semiconductor material including GaN to emit green light and blue light, respectively, but are not limited thereto.

[0167] On the other hand, the electrode wiring 360 commonly connected to the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 may be supplied with a low potential voltage VSS, and the source terminal of the driving transistor DT may be supplied with a high potential voltage VDD. In this case, as described above, the intensity of light of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3, that is, the brightness, may be different according to the magnitude of the first data voltage, the second data voltage, and the third data voltage respectively supplied to the first data line D1, the second data line D2, and the third data line D3. The first data voltage may be a red data voltage, the second data voltage may be a green data voltage, and the third data voltage may be a blue data voltage, but are not limited thereto.

[0168] Fig.13 is along Fig.12 A cross-sectional view of a display device of an embodiment taken along line C1-C2.

[0169] exist Fig.12 The first sub-pixel PX1 is shown in FIG. 1 , and since the second sub-pixel PX2 and the third sub-pixel PX3 also have a similar structure to the first sub-pixel PX1 , it can be easily understood from the following description of the first sub-pixel PX1 .

[0170] Reference Figures 11 to 13 The display device 300 of the embodiment may include a substrate 310, a first group of assembly lines 321, 323, 325, a second group of assembly lines 322, 324, 326, a partition wall 340, a plurality of semiconductor light emitting devices 150-1, 150-2, 150-3, a plurality of connection electrodes 370-1, 370-2, 370-3, and an electrode wiring 360. The display device 300 of the embodiment may include more components than this.

[0171] As described above, the substrate 310 plays a role of supporting the components arranged thereon, and therefore a detailed description thereof is omitted.

[0172] A plurality of sub-pixels PX1, PX2, and PX3 may be defined on the substrate 310. The figure shows that the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 are arranged along the second direction Y, but the present invention is not limited thereto.

[0173] A first subpixel column including a plurality of first subpixels PX1 , a second subpixel column including a plurality of second subpixels PX2 , and a third subpixel column including a plurality of third subpixels PX3 may be arranged along the second direction Y in parallel with each other.

[0174] At least one assembly hole 340H1 , 340H2 , and 340H3 may be provided in the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 , respectively.

[0175] Through the self-assembly process, in each of the multiple sub-pixels PX1, PX2, PX3, the multiple semiconductor light-emitting devices 150-1, 150-2, 150-3 can be assembled in the assembly holes 340H1, 340H2, 340H3 respectively by the dielectrophoretic force formed between the first group of assembly lines 321, 323, 325 and the second group of assembly lines 322, 324, 326.

[0176] For example, the first semiconductor light emitting device 150-1 may be assembled in the first assembly hole 340H1 by the dielectrophoretic force formed between the first assembly line 321 and the second assembly line 322 disposed in the first sub-pixel PX1. For example, the second semiconductor light emitting device 150-2 may be assembled in the second assembly hole 340H2 by the dielectrophoretic force formed between the first assembly line 323 and the second assembly line 324 disposed in the second sub-pixel PX2. For example, the third semiconductor light emitting device 150-3 may be assembled in the third assembly hole 340H3 by the dielectrophoretic force formed between the first assembly line 325 and the second assembly line 326 disposed in the third sub-pixel PX3.

[0177] The sizes of the assembly holes 340H1, 340H2, 340H3 may be determined by considering the tolerance margin for forming the assembly holes 340H1, 340H2, 340H3 and the margin for easily assembling the semiconductor light emitting devices 150-1, 150-2, 150-3 in the assembly holes 340H1, 340H2, 340H3, etc. For example, the sizes of the assembly holes 340H1, 340H2, 340H3 may be larger than the sizes of the semiconductor light emitting devices 150-1, 150-2, 150-3. For example, when the semiconductor light emitting devices 150-1, 150-2, 150-3 are assembled in the center of the assembly holes 340H1, 340H2, 340H3, the distance between the outer side surfaces of the semiconductor light emitting devices 150-1, 150-2, 150-3 and the inner side surfaces of the assembly holes 340H1, 340H2, 340H3 may be less than 2 μm, but is not limited thereto.

[0178] For example, the assembly holes 340H1, 340H2, 340H3 may have a shape corresponding to the shape of the semiconductor light emitting devices 150-1, 150-2, 150-3. For example, when the semiconductor light emitting devices 150-1, 150-2, 150-3 are circular, the assembly holes 340H1, 340H2, 340H3 may also be circular. For example, when the semiconductor light emitting devices 150-1, 150-2, 150-3 are rectangular, the assembly holes 340H1, 340H2, 340H3 may also be rectangular.

[0179] As an example, the assembly holes 340H1, 340H2, and 340H3 of each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may have the same shape, i.e., a circle. In this case, the first semiconductor light emitting device 150-1 configured in the first subpixel PX1, the second semiconductor light emitting device 150-2 configured in the second subpixel PX2, and the third semiconductor light emitting device 150-3 configured in the third subpixel PX3 may have a shape corresponding to the assembly holes 340H1, 340H2, and 340H3, i.e., a circle.

[0180] As described above, when the assembly holes 340H1, 340H2, 340H3 of each sub-pixel in the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 have the same shape, the first semiconductor light-emitting device 150-1, the second semiconductor light-emitting device 150-2, and the third semiconductor light-emitting device 150-3 can be assembled in sequence in the assembly holes 340H1, 340H2, 340H3 of each sub-pixel in the corresponding sub-pixels PX1, PX2, and PX3, respectively, but are not limited to this.

[0181] For example, the first semiconductor light emitting device 150-1 may be assembled to the first assembly hole 340H1 of the first sub-pixel PX1 of the substrate 310, the second semiconductor light emitting device 150-2 may be assembled to the second assembly hole 340H2 of the second sub-pixel PX2 of the substrate 310, and the third semiconductor light emitting device 150-3 may be assembled to the third assembly hole 340H3 of the third sub-pixel PX3 of the substrate 310. In this case, the shape of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 may be the same, but is not limited thereto. Each assembly hole 340H1, 340H2, 340H3 may have a shape corresponding to the shape of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3, respectively, and may have a size larger than the size of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3.

[0182] As another example, although not shown, the assembly holes 340H1 , 340H2 , and 340H3 of each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may have different shapes.

[0183] For example, the first assembly hole 340H1 of the first subpixel PX1 may have a circular shape, the second assembly hole 340H2 of the second subpixel PX2 may have a first elliptical shape including a first short axis and a first long axis, and the third assembly hole 340H3 of the third subpixel PX3 may have a second elliptical shape including a second short axis shorter than the first short axis and a second long axis longer than the first long axis. In this case, the first semiconductor light emitting device 150-1 may have a shape corresponding to the first assembly hole 340H1 of the first subpixel PX1, i.e., a circular shape, the second semiconductor light emitting device 150-2 may have a shape corresponding to the second assembly hole 340H2 of the second subpixel PX2, i.e., a first elliptical shape, and the third semiconductor light emitting device 150-3 may have a shape corresponding to the third assembly hole 340H3 of the third subpixel PX3, i.e., a second elliptical shape.

[0184] As described above, by having a plurality of assembly holes 340H1, 340H2, 340H3 having different shapes and the first to third semiconductor light emitting devices 150-1, 150-2, 150-3 having a shape corresponding to each of the plurality of assembly holes 340H1, 340H2, 340H3, the first to third semiconductor light emitting devices 150-1, 150-2, 150-3 can be simultaneously assembled in the corresponding assembly holes 340H1, 340H2, 340H3 during self-assembly. That is, even if the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 are mixed in the fluid 1200 for self-assembly, the corresponding semiconductor devices 150-1, 150-2, 150-3 can be assembled in the assembly holes 340H1, 340H2, 340H3 of each sub-pixel in the first sub-pixel PX1, the second sub-pixel PX2 and the third sub-pixel PX3 on the substrate 310.

[0185] For example, a first semiconductor light emitting device 150-1 having a shape corresponding to the shape of the first assembly hole 340H1 may be assembled in the first assembly hole 340H1 of the first sub-pixel PX1. At the same time, a second semiconductor light emitting device 150-2 having a shape corresponding to the shape of the second assembly hole 340H2 may be assembled in the second assembly hole 340H2 of the second sub-pixel PX2. At the same time, a third semiconductor light emitting device 150-3 having a shape corresponding to the shape of the third assembly hole 340H3 may be assembled in the third assembly hole 340H3 of the third sub-pixel PX3. Therefore, the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 having different shapes are respectively assembled to the assembly holes 340H1, 340H2, and 340H3 corresponding to their own shapes, thereby preventing poor assembly.

[0186] On the other hand, the plurality of semiconductor light emitting devices may include a first semiconductor light emitting device 150-1, a second semiconductor light emitting device 150-2, and a third semiconductor light emitting device 150-3. For example, the first semiconductor light emitting device 150-1 may be disposed in a first assembly hole 340H1 of the first sub-pixel PX1, the second semiconductor light emitting device 150-2 may be disposed in a second assembly hole 340H2 of the second sub-pixel PX2, and the third semiconductor light emitting device 150-3 may be disposed in a third assembly hole 340H3 of the second semiconductor light emitting device 150-2 and the third sub-pixel PX3.

[0187] Since the structures of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 are similar or identical, the following description will be centered on the first semiconductor light emitting device 150-1. The second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 can be easily understood from the first semiconductor light emitting device 150-1 described below.

[0188] like Fig.14 As shown, the first semiconductor light emitting device 150-1 may include a second conductive semiconductor layer 153, an active layer 152, a first conductive semiconductor layer 151, a passivation layer 157, and a side electrode 155. The second conductive semiconductor layer, the active layer 152, and the first conductive semiconductor layer 151 may constitute a light emitting layer.

[0189] The active layer 152 may be disposed on the top surface of the second conductive type semiconductor layer 153, and the first conductive type semiconductor layer 151 may be disposed on the top surface of the active layer 152. The second conductive type semiconductor layer 153 may include a p-type dopant, and the first conductive type semiconductor layer 151 may include an n-type dopant. The passivation layer 157 may surround the periphery of the light emitting layers 151 to 153.

[0190] Although not shown, an upper electrode including an ohmic layer for forming an ohmic layer may be disposed on the first conductive type semiconductor layer 151 , but the present invention is not limited thereto.

[0191] The side electrodes 155 may be arranged on the side of the light emitting layers 151 to 153. The side electrodes 155 may extend from the lower side of the light emitting layers 151 to 153 and be arranged on the side of the light emitting layers 151 to 153. The side electrodes 155 may be arranged along the periphery of the side of the light emitting layers 151 to 153, but are not limited thereto. For example, the side electrodes 155 may be arranged along the periphery of the side of the second conductive type semiconductor layer 153. At the side of the light emitting layers 151 to 153, the side electrodes 155 may be in contact with the passivation layer 157. Therefore, the light emitting layers 151 to 153 may be protected by the passivation layer 157 and the side electrodes 155. Since the height of the side electrodes 155 arranged on the side of the light emitting layers 151 to 153 is lower than the height of the active layer 152, an electrical short circuit between the side electrodes 155 and the active layer 152 can be prevented. Here, the height may be based on the bottom surface of the light emitting layers 151 to 153.

[0192] On the other hand, the first semiconductor light emitting device 150-1 may have an inclined surface 154 so that the size of the lower side is larger than the size of the upper side. The inclined surface 154 may be a side surface of the light emitting layers 151 to 153 or a side surface of the passivation layer 157. For example, the inclined surface 154 may make the size of the bottom surface of the light emitting layers 151 to 153 larger than the size of the top surface 151a. In this case, since the passivation layer 157 is disposed on the inclined surface 154 of the light emitting layers 151 to 153, the passivation layer 157 may also have an inclined surface.

[0193] On the other hand, the partition wall 340 may include a plurality of assembly holes 340H1, 340H2, 340H3. The plurality of assembly holes 340H1, 340H2, 340H3 may include a first assembly hole 340H1 disposed in the first sub-pixel PX1, a second assembly hole 340H2 disposed in the second sub-pixel PX2, and a third assembly hole 340H3 disposed in the third sub-pixel PX3.

[0194] The first assembly hole 340H1 , the second assembly hole 340H2 , and the third assembly hole 340H3 may be grooves, recesses, trenches, or dents having a predetermined depth, respectively.

[0195] As described above, by using a self-assembly method, the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 can be assembled in the first assembly hole 340H1, the second assembly hole 340H2 and the third assembly hole 340H3 respectively.

[0196] Top surfaces of the second semiconductor light emitting device 150 - 2 and the third semiconductor light emitting device 150 - 3 respectively disposed in the first assembly hole 340H1 , the second assembly hole 340H2 and the third assembly hole 340H3 may be higher than or the same as the top surface of the partition wall 340 .

[0197] On the other hand, the first subpixel PX1 , the second subpixel PX2 , and the third subpixel PX3 may include first group assembly lines 321 , 323 , 325 and second group assembly lines 322 , 324 , 326 , respectively.

[0198] The first assembly lines 321, 323, 325 may be respectively disposed at the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 of the substrate 310. The second assembly lines 322, 324, 326 may be respectively disposed at the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 of the substrate 310.

[0199] The first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 can be respectively configured in the first assembly hole 340H1 of the first sub-pixel PX1, the second assembly hole 340H2 of the second sub-pixel PX2 and the third assembly hole 340H3 of the third sub-pixel PX3 through the dielectrophoretic force between the first assembly line 321, 323, 325 and the second assembly line 322, 324, 326. That is, the first assembly line 321, 323, 325 and the second assembly line 322, 324, 326 of the first sub-pixel PX1, the second sub-pixel PX2 and the third sub-pixel PX3 can be provided for assembling the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3.

[0200] The first group of assembly lines 321 , 323 , 325 and the second group of assembly lines 322 , 324 , 326 may have mutually symmetrical structures centered on a reference line in the second direction Y passing through the centers of the first assembly hole 340H1 , the second assembly hole 340H2 , and the third assembly hole 340H3 .

[0201] In each of the first subpixel PX1, the second subpixel PX2 and the third subpixel PX3, the first group of assembly lines 321, 323, 325 may include first conductive electrodes 321-1, 323-1, 325-1 and second conductive electrodes 321-2, 323-2, 325-2, and the second group of assembly lines 322, 324, 326 may include first conductive electrodes 322-1, 324-1, 326-1 and second conductive electrodes 322-2, 324-2, 326-2.

[0202] The first conductive electrodes 321-1, 323-1, 325-1 of the first assembly lines 321, 323, 325 may be arranged long along the second direction Y. Partial areas of the first conductive electrodes 321-1, 323-1, 325-1 of the first assembly lines 321, 323, 325 may include protruding electrodes extending toward the first assembly hole 340H1, the second assembly hole 340H2, and the third assembly hole 340H3, respectively. The protruding electrodes of the first conductive electrodes 321-1, 323-1, 325-1 of the first assembly lines 321, 323, 325 may vertically overlap with the first assembly hole 340H1, the second assembly hole 340H2, and the third assembly hole 340H3, respectively.

[0203] The second conductive electrodes 321-2, 323-2, 325-2 of the first assembly lines 321, 323, 325 may be connected to the first conductive electrodes 321-1, 323-1, 325-1, respectively, and may vertically overlap the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3. A portion of the second conductive electrodes 321-2, 323-2, 325-2 of the first assembly lines 321, 323, 325 may vertically overlap the protruding electrodes of the first conductive electrodes 321-1, 323-1, 325-1, respectively. For example, the second conductive electrodes 321-2, 323-2, 325-2 may contact the side and top surfaces of the protruding electrodes of the first conductive electrodes 321-1, 323-1, 325-1, but is not limited thereto. That is, the second conductive electrodes 321 - 2 , 323 - 2 , and 325 - 2 may also be in contact with the bottom surfaces of the protruding electrodes.

[0204] The first conductive electrodes 322-1, 324-1, 326-1 of the second assembly lines 322, 324, 326 may be arranged long along the second direction Y. Partial areas of the first conductive electrodes 322-1, 324-1, 326-1 of the second assembly lines 322, 324, 326 may include protruding electrodes extending toward the first assembly hole 340H1, the second assembly hole 340H2, and the third assembly hole 340H3, respectively. The protruding electrodes of the first conductive electrodes 322-1, 324-1, 326-1 of the second assembly lines 322, 324, 326 may vertically overlap with the first assembly hole 340H1, the second assembly hole 340H2, and the third assembly hole 340H3, respectively.

[0205] The second conductive electrodes 322-2, 324-2, 326-2 of the second assembly lines 322, 324, 326 may be connected to the first conductive electrodes 322-1, 324-1, 326-1, respectively, and may vertically overlap the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3. A portion of the second conductive electrodes 322-2, 324-2, 326-2 of the second assembly lines 322, 324, 326 may vertically overlap the protruding electrodes of the first conductive electrodes 322-1, 324-1, 326-1, respectively. For example, the second conductive electrodes 322-2, 324-2, 326-2 may contact the side and top surfaces of the protruding electrodes of the first conductive electrodes 322-1, 324-1, 326-1, but is not limited thereto. That is, the second conductive electrodes 322 - 2 , 324 - 2 , and 326 - 2 may also be in contact with the bottom surfaces of the protruding electrodes.

[0206] For example, the first conductive electrodes 321-1, 323-1, 325-1 of the first group of assembly lines 321, 323, 325 and the first conductive electrodes 322-1, 324-1, 326-1 of the second group of assembly lines 322, 324, 326 may have mutually symmetrical structures with reference lines in the second direction Y passing through the centers of the first assembly hole 340H1, the second assembly hole 340H2 and the third assembly hole 340H3 as the center. For example, the second conductive electrodes 321-2, 323-2, 325-2 of the first group of assembly lines 321, 323, 325 and the second conductive electrodes 322-2, 324-2, 326-2 of the second group of assembly lines 322, 324, 326 may have mutually symmetrical structures with reference lines in the second direction Y passing through the centers of the first assembly hole 340H1, the second assembly hole 340H2 and the third assembly hole 340H3 as the center.

[0207] On the other hand, the plurality of sub-pixels PX1 , PX2 , and PX3 may include a plurality of connection electrodes 370 - 1 , 370 - 2 , and 370 - 3 , respectively.

[0208] The first connection electrode 370-1 may be disposed in the first assembly hole 340H1 of the first subpixel PX1 at the periphery of the first semiconductor light emitting device 150-1. One side of the first connection electrode 370-1 may be connected to the side of the first semiconductor light emitting device 150-1. One side of the first connection electrode 370-1 may be connected to the side electrode 155 of the first semiconductor light emitting device 150-1. The other side of the first connection electrode 370-1 may be connected to the first group of assembly lines 321 and / or the second group of assembly lines 322. The other side of the first connection electrode 370-1 may contact the first conductive electrode 321-1 of the first group of assembly lines 321. The other side of the first connection electrode 370-1 may contact the second conductive electrode 321-2 of the first group of assembly lines 321. The other side of the first connection electrode 370-1 may contact the first conductive electrode 322-1 of the second group of assembly lines 322. The other side of the first connection electrode 370-1 may contact the second conductive electrode 322-2 of the second group of assembly lines 322.

[0209] A portion of the second conductive electrode 321-2 of the first assembly line 321 may vertically overlap with the other side of the first connection electrode 370-1, and another portion of the second conductive electrode 321-2 of the first assembly line 321 may vertically overlap with the first semiconductor light emitting device 150-1. A portion of the second conductive electrode 322-2 of the second assembly line 322 may vertically overlap with the other side of the first connection electrode 370-1, and another portion of the second conductive electrode 322-2 of the second assembly line 322 may vertically overlap with the first semiconductor light emitting device 150-1.

[0210] The second connection electrode 370-2 may be disposed in the second assembly hole 340H2 of the second subpixel PX2 at the periphery of the second semiconductor light emitting device 150-2. One side of the second connection electrode 370-2 may be connected to the side of the second semiconductor light emitting device 150-2. One side of the second connection electrode 370-2 may be connected to the side electrode of the second semiconductor light emitting device 150-2. The other side of the second connection electrode 370-2 may be connected to the first group of assembly lines 323 and / or the second group of assembly lines 324. The other side of the second connection electrode 370-2 may be in contact with the first conductive electrode 323-1 of the first group of assembly lines 323. The other side of the second connection electrode 370-2 may be in contact with the second conductive electrode 323-2 of the first group of assembly lines 323. The other side of the second connection electrode 370-2 may be in contact with the first conductive electrode 324-1 of the second group of assembly lines 324. The other side of the second connection electrode 370-2 may be in contact with the second conductive electrode 324-2 of the second group of assembly lines 324.

[0211] A portion of the second conductive electrode 323-2 of the first assembly line 323 may vertically overlap with the other side of the second connection electrode 370-2, and another portion of the second conductive electrode 323-2 of the first assembly line 323 may vertically overlap with the second semiconductor light emitting device 150-2. A portion of the second conductive electrode 324-2 of the second assembly line 324 may vertically overlap with the other side of the second connection electrode 370-2, and another portion of the second conductive electrode 324-2 of the second assembly line 324 may vertically overlap with the second semiconductor light emitting device 150-2.

[0212] The third connection electrode 370-3 may be disposed in the third assembly hole 340H3 of the third subpixel PX3 at the periphery of the third semiconductor light emitting device 150-3. One side of the third connection electrode 170-3 may be connected to the side of the third semiconductor light emitting device 150-3. One side of the third connection electrode 170-3 may be connected to the side electrode of the third semiconductor light emitting device 150-3. The other side of the third connection electrode 170-3 may be connected to the first group of assembly lines 325 and / or the second group of assembly lines 326. The other side of the third connection electrode 170-3 may be in contact with the first conductive electrode 325-1 of the first group of assembly lines 325. The other side of the third connection electrode 170-3 may be in contact with the second conductive electrode 325-1 of the first group of assembly lines 325. The other side of the third connection electrode 170-3 may be in contact with the first conductive electrode 326-1 of the second group of assembly lines 326. The other side of the third connection electrode 170-3 may be in contact with the second conductive electrode 326-2 of the second group of assembly lines 326.

[0213] A portion of the second conductive electrode 325-2 of the first assembly line 325 may vertically overlap with the other side of the third connection electrode 170-3, and another portion of the second conductive electrode 325-2 of the first assembly line 325 may vertically overlap with the third semiconductor light emitting device 150-3. A portion of the second conductive electrode 326-2 of the second assembly line 326 may vertically overlap with the other side of the third connection electrode 170-3, and another portion of the second conductive electrode 326-2 of the second assembly line 326 may vertically overlap with the third semiconductor light emitting device 150-3.

[0214] On the other hand, the first connection electrode 370-1 may be attached to the first semiconductor light emitting device 150-1, the first conductive electrode 321-1 and the second conductive electrode 321-2 of the first group assembly line 321, the first conductive electrode 322-1 and the second conductive electrode 322-2 of the second group assembly line 322, and the first insulating layer 330 and the partition wall 340 exposed in the first assembly hole 340H1. Thus, the fixing force of the first group assembly line 321, the second group assembly line 322, and the first semiconductor light emitting device 150-1 may be strengthened by the first connection electrode 370-1.

[0215] The second connection electrode 370-2 may be attached to the second semiconductor light emitting device 150-2, the first conductive electrode 323-1 and the second conductive electrode 323-2 of the first group assembly line 323, the first conductive electrode 324-1 and the second conductive electrode 324-2 of the second group assembly line 324, and the first insulating layer 330 and the partition wall 340 exposed in the second assembly hole 340H2. Thus, the fixing force of the first group assembly line 323, the second group assembly line 324, and the second semiconductor light emitting device 150-2 may be strengthened by the second connection electrode 370-2.

[0216] The third connection electrode 170-3 may be attached to the third semiconductor light emitting device 150-3, the first conductive electrode 325-1 and the second conductive electrode 325-2 of the first group assembly line 325, the first conductive electrode 326-1 and the second conductive electrode 326-2 of the second group assembly line 326, and the first insulating layer 330 and the partition wall 340 exposed in the third assembly hole 340H3. Thus, the fixing force of the first group assembly line 325, the second group assembly line 326 and the third semiconductor light emitting device 150-3 may be strengthened by the third connection electrode 170-3.

[0217] On the other hand, the electrode wiring 360 may be arranged on a plurality of pixels PX. That is, the electrode wiring 360 may be arranged on the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 constituting each of the plurality of pixels PX. For example, the electrode wiring 360 may be arranged on the first semiconductor light emitting device 150-1 of the first sub-pixel PX1, the second semiconductor light emitting device 150-2 of the second sub-pixel PX2, and the third semiconductor light emitting device 150-3 of the third sub-pixel PX3. For example, the electrode wiring 360 may be arranged on the partition wall 340. For example, the electrode wiring 360 may be arranged on the second insulating layer 350 of each of the first assembly hole 340H1, the second assembly hole 340H2, and the third assembly hole 340H3 of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3.

[0218] The electrode wiring 360 may be commonly connected to the first semiconductor light emitting device 150 - 1 , the second semiconductor light emitting device 150 - 2 , and the third semiconductor light emitting device 150 - 3 .

[0219] The electrode wiring 360 may contact the top surface 151a of the first semiconductor light emitting device 150-1. The electrode wiring 360 may contact the top surface 151a of the first conductive type semiconductor layer 151 of the first semiconductor light emitting device 150-1. In the case where the upper electrode is disposed on the first conductive type semiconductor layer 151, the electrode wiring 360 may contact the top surface of the upper electrode. The upper electrode may include an ohmic layer for forming an ohmic.

[0220] The electrode wiring 360 may contact the top surface of the second semiconductor light emitting device 150-2. The electrode wiring 360 may contact the top surface of the first conductive type semiconductor layer 151 of the second semiconductor light emitting device 150-2. In the case where the upper electrode is disposed on the first conductive type semiconductor layer 151, the electrode wiring 360 may contact the top surface of the upper electrode. The upper electrode may include an ohmic layer for forming an ohmic.

[0221] The electrode wiring 360 may contact the top surface of the third semiconductor light emitting device 150-3. The electrode wiring 360 may contact the top surface of the first conductive type semiconductor layer 151 of the third semiconductor light emitting device 150-3. In the case where the upper electrode is disposed on the first conductive type semiconductor layer 151, the electrode wiring 360 may contact the top surface of the upper electrode. The upper electrode may include an ohmic layer for forming an ohmic.

[0222] The electrode wiring 360 may be in contact with the top surface of the partition wall 340. The top surface 151a of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 may be located on the same horizontal line as the top surface of the partition wall 340, but is not limited thereto. In the case where the top surface of the partition wall 340 is located at a lower position than the top surface 151a of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3, the top surface 151a of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 and the top surface of the partition wall 340 are not located on the same horizontal line.

[0223] On the other hand, the first assembly wires 321, 323, 325 and / or the second assembly wires 322, 324, 326 may be anode electrodes, and the electrode wiring 360 may be a cathode electrode. In this case, since a negative (-) voltage is supplied to the electrode wiring 360 and a positive (+) voltage is supplied to the first assembly wires 321, 323, 325 and / or the second assembly wires 322, 324, 326, a current may flow in the order of the first assembly wires 321, 323, 325 and / or the second assembly wires 322, 324, 326->the first semiconductor light emitting device 150-1 or the second semiconductor light emitting device 150-2 or the third semiconductor light emitting device 150-3->the electrode wiring 360. For example, the first current flows from the lower portion to the upper portion of the first semiconductor light emitting device 150-1, and the first semiconductor light emitting device 150-1 may emit red light having a brightness corresponding to the first current. For example, the second current flows from the lower part to the upper part of the second semiconductor light emitting device 150-2, and the second semiconductor light emitting device 150-2 can emit green light with brightness corresponding to the second current. For example, the third current flows from the lower part to the upper part of the third semiconductor light emitting device 150-3, and the third semiconductor light emitting device 150-3 can emit blue light with brightness corresponding to the third current. Here, the first current, the second current, and the third current can be driving currents for generating light, respectively.

[0224] Re-reference Figures 11 to 13 , the display device 300 of the embodiment may include a first insulating layer 330 and a second insulating layer 350 .

[0225] The first insulating layer 330 can be disposed on the first group of assembly lines 321, 323, 325 and the second group of assembly lines 322, 324, 326. The first insulating layer 330 can prevent the first group of assembly lines 321, 323, 325 and the second group of assembly lines 322, 324, 326 from being corroded due to exposure to fluid during self-assembly. The first insulating layer 330 can prevent electrical short circuits between the first group of assembly lines 321, 323, 325 and the second group of assembly lines 322, 324, 326. The first insulating layer 330 can help the plurality of semiconductor light-emitting devices 150-1, 150-2, 150-3 to be assembled more easily. To this end, the first insulating layer 330 can be composed of an insulating material having a dielectric constant. The strength of the dielectrophoretic force can be different according to the dielectric constant of the first insulating layer 330 and the dielectric constant within the plurality of semiconductor light-emitting devices 150-1, 150-2, 150-3, such as the dielectric constant of the passivation layer 157.

[0226] The first insulating layer 330 may be made of a material having excellent insulating properties, such as an inorganic insulating material such as SiNx or SiOx, but is not limited thereto.

[0227] The second insulating layer 350 may be disposed on a plurality of sub-pixels PX1, PX2, and PX3. That is, the second insulating layer 350 may be disposed on the first assembly hole 340H1 of the first sub-pixel PX1, the second assembly hole 340H2 of the second sub-pixel PX2, and the third assembly hole 340H3 of the third sub-pixel PX3, respectively. The second insulating layer 350 may be disposed on the periphery of the first semiconductor light-emitting device 150-1 at the first assembly hole 340H1. The second insulating layer 350 may be disposed on the first connection electrode 370-1 at the first assembly hole 340H1. The second insulating layer 350 may be disposed on the periphery of the second semiconductor light-emitting device 150-2 at the second assembly hole 340H2. The second insulating layer 350 may be disposed on the second connection electrode 370-2 at the second assembly hole 340H2. The second insulating layer 350 may be disposed on the periphery of the third semiconductor light-emitting device 150-3 at the third assembly hole 340H3. The second insulating layer 350 may be disposed on the third connection electrode 170 - 3 in the third assembly hole 340H3 .

[0228] The top surface of the second insulating layer 350 may be on the same level as the top surface of the partition wall 340. The top surface of the second insulating layer 350 may be on the same level as the top surface 151a of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3.

[0229] On the other hand, Fig.12As shown, the first signal line SL1, the second signal line SL2 and the third signal line SL3 can be electrically connected to the first group of assembly lines 321, 323, 325 and the second group of assembly lines 322, 324, 326 of the first sub-pixel PX1, the second sub-pixel PX2 and the third sub-pixel PX3 respectively through the contact holes CTH1a, CTH1b, CTH2a, CTH2b, CTH3a, CTH3b. In the figure, it is shown that the first signal line SL1, the second signal line SL2 and the third signal line SL3 are connected to the first group of assembly lines 321, 323, 325 and the second group of assembly lines 322, 324, 326 respectively, but can also be selectively connected to the first group of assembly lines 321, 323, 325 or the second group of assembly lines 322, 324, 326.

[0230] on the other hand, Fig.15 A case where an image is displayed according to a bottom emission method in the display device of the embodiment is shown.

[0231] like Fig.15 As shown, the light generated in the first semiconductor light emitting device 150-1 may be directly discharged in the downward direction, or may proceed in the downward direction after being reflected by the electrode wiring 360. The red light proceeding in the downward direction may penetrate the first group assembly wire 321 and / or the second group assembly wire 322. To this end, the electrode wiring 360 may be a reflective electrode, and the first group assembly wire 321 and / or the second group assembly wire 322 may be a transparent electrode. The first conductive electrode 321-1 of the first group assembly wire 321 and / or the first conductive electrode 322-1 of the second group assembly wire 322 may be a metal electrode, and the second conductive electrode 321-2 of the first group assembly wire 321 and / or the second conductive electrode 322-2 of the second group assembly wire 322 may be a transparent electrode. Even if the first conductive electrode 321-1 of the first group of assembly lines 321 and / or the first conductive electrode 322-1 of the second group of assembly lines 322 are opaque metal electrodes, red light can penetrate the first conductive electrode 321-1 of the first group of assembly lines 321 and / or the first conductive electrode 322-1 of the second group of assembly lines 322 by designing them to a thickness that is penetrable by the wavelength of red light.

[0232] Although not shown, the green light of the second semiconductor light emitting device 150 - 2 and the blue light of the third semiconductor light emitting device 150 - 3 may also emit light in a bottom emission manner traveling in a downward direction.

[0233] According to the embodiment, the electrode wiring 360 reflects light as a reflective electrode, so that the brightness of light can be improved.

[0234] Fig.16 The display device of the embodiment shows a case where an image is displayed according to a top emission method.

[0235] like Fig.16 As shown, the light generated in the first semiconductor light emitting device 150-1 may be directly discharged in the upper direction, or may proceed in the upper direction after being reflected by the first assembly line 321 and / or the second assembly line 322. The red light proceeding in the upper direction may penetrate the electrode wiring 360. To this end, the electrode wiring 360 may be a transparent electrode, and the first assembly line 321 and / or the second assembly line 322 may be a reflective electrode. The second conductive electrode 321-2 of the first assembly line 321 and / or the second conductive electrode 322-2 of the second assembly line 322 may be a reflective electrode.

[0236] Although not shown, the green light of the second semiconductor light emitting device 150 - 2 and the blue light of the third semiconductor light emitting device 150 - 3 may also emit light in a top emission manner traveling in an upward direction.

[0237] According to the embodiment, the electrode wiring 360 can be directly connected to the upper side of each of the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 without penetrating an additional insulating layer. Therefore, in the embodiment, when the electrode wiring is formed on the additional insulating layer and a contact hole is formed for connecting to each semiconductor light emitting device individually, an electrical short circuit between the electrode wiring and the connection electrode at the periphery of each semiconductor light emitting device caused by the offset of the contact hole due to the misalignment of the pattern mask can be prevented.

[0238] According to the embodiment, a single plate-shaped electrode wiring 360 is configured on the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3, without separately forming the first electrode wiring, the second electrode wiring and the third electrode wiring for connecting to the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2 and the third semiconductor light emitting device 150-3 on an additional insulating layer, so the structure is simple and the process is easy.

[0239] Figures 17 to 24 It is a cross-sectional view showing the manufacturing process of the display device of the embodiment.

[0240] Figures 17 to 24 Although the manufacturing process of the first sub-pixel PX of the display device 300 is shown, the manufacturing process of the second sub-pixel PX2 and the third sub-pixel PX3 may be the same as the manufacturing process of the first sub-pixel PX1 described below.

[0241] like Fig.17As shown, the first conductive electrodes 321-1 and 322-1 may be formed on the substrate 310 and separated from each other. That is, the first conductive electrodes 321-1 and 322-1 may be formed by depositing and patterning a conductive film on the substrate 310. The first conductive electrodes 321-1 and 322-1 may be opaque electrodes, transparent electrodes, or reflective electrodes. The first conductive electrodes 321-1 and 322-1 may be a single layer or multiple layers.

[0242] like Fig.18 As shown, the second conductive electrodes 321-2 and 322-2 may be formed on the substrate 310 and separated from each other. That is, the second conductive electrodes 321-2 and 322-2 may be formed by depositing and patterning a conductive film on the substrate 310. The second conductive electrodes 321-2 and 322-2 may be opaque electrodes, transparent electrodes, or reflective electrodes. The second conductive electrodes 321-2 and 322-2 may be a single layer or multiple layers.

[0243] A portion of the second conductive electrodes 321 - 2 and 322 - 2 vertically overlaps with a portion of the first conductive electrodes 321 - 1 and 322 - 1 , and they may be electrically connected to each other.

[0244] The first conductive electrode 321-1 and the second conductive electrode 321-2 connected to the first conductive electrode 321-1 may constitute a first group of assembly lines 321. The first conductive electrode 322-1 and the second conductive electrode 322-2 connected to the first conductive electrode 322-1 may constitute a second group of assembly lines 322.

[0245] The first group of assembly lines 321 and the second group of assembly lines 322 may be used later in assembling the first semiconductor light emitting device 150 - 1 .

[0246] like Fig.19 As shown, the first insulating layer 330 may be formed on the first group of assembly lines 321 and the second group of assembly lines 322. The first insulating layer 330 may be formed on the entire area of ​​the substrate 310, but is not limited thereto. The first insulating layer 330 may be formed of an inorganic material having excellent insulation properties, but is not limited thereto. The first insulating layer 330 may be composed of an insulating material having a dielectric constant.

[0247] like Fig. 20 As shown, the partition wall 340 may be formed on the first insulating layer 330. The partition wall 340 may have a first assembly hole 340H1. After the partition wall 340 is formed on the first insulating layer 330, the first assembly hole 340H1 may be formed by removing the partition wall 340 on the first group assembly line 321 and the second group assembly line 322. That is, by removing the partition wall 340, the top surface of the first insulating layer 330 may be exposed.

[0248] The partition wall 340 may be formed to be smaller than or the same thickness as the first semiconductor light emitting device 150 - 1 to be assembled later in the first assembly hole 340H1 .

[0249] For example, the first assembly holes 340H1 may be formed on the second conductive electrodes 321 - 2 of the first group assembly line 321 and the second conductive electrodes 322 - 2 of the second group assembly line 322 , but are not limited thereto.

[0250] As described above, the substrate 310 formed with the first assembly line 321, the second assembly line 322, and the first assembly hole 340H1 may be referred to as an assembly substrate 300A or a backplane substrate. The assembly substrate 300A may be provided with a driving circuit for driving the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, for example, Figure 7 The scanning transistor ST, driving transistor DT, capacitor Cst, etc. are shown.

[0251] On the other hand, a self-assembly process may be performed using the assembly substrate 300A manufactured as described above.

[0252] First, in the chamber ( Fig.10 After the fluid 1200 is filled in the chamber 1300), the assembly substrate 300A can be fastened to the chamber 1300. Then, the plurality of first semiconductor light emitting devices 150-1 can be put into the fluid 120. By applying an AC voltage to the first assembly line 321 and the second assembly line 322, a dielectrophoretic force can be formed in the first assembly hole 340H1. Then, at least one magnet 1100 rotates and / or moves behind the assembly substrate 300A, so that the plurality of first semiconductor light emitting devices 150-1 can rotate and / or move.

[0253] The first semiconductor light emitting device 150-1 closest to the first assembly hole 340H1 among the plurality of first semiconductor light emitting devices 150-1 rotating and / or moving in the chamber 1300 may be assembled in the first assembly hole 340H1 under the action of the dielectrophoretic force formed by the AC voltage between the first group assembly line 321 and the second group assembly line 322. The lower side of the first semiconductor light emitting device 150-1 assembled in the first assembly hole 340H1 may be in contact with the top surface of the first insulating layer 330 or located on the top surface of the first insulating layer 330.

[0254] like Fig.21 As shown, the first semiconductor light emitting device 150 - 1 assembled in the first assembly hole 340H1 is fixed by the dielectrophoretic force so as not to be separated from the outside of the first assembly hole 340H1 .

[0255] like Fig. 22 As shown, by removing the first insulating layer 330 located at the periphery of the first semiconductor light emitting device 150-1 in the first assembly hole 340H1, a connection hole 330H that exposes the top surface of the first assembly line 321 and / or the second assembly line 322 can be formed. Through the connection hole 330H, the top surface of a portion of the first conductive electrode 321-1, 322-1 of the first assembly line 321 and / or the second assembly line 322 can be exposed. Through the connection hole 330H, the top surface of a portion of the second conductive electrode 321-2, 322-2 of the first assembly line 321 and / or the second assembly line 322 can be exposed. The connection hole 330H can be used to electrically connect the first semiconductor light emitting device 150-1 to the first assembly line 321 and / or the second assembly line 322.

[0256] That is, Fig.23 As shown, the first connection electrode 370-1 may be formed at the periphery of the first semiconductor light emitting device 150-1 at the first assembly hole 340H1. The first connection electrode 370-1 may contact the side electrode 155 of the first semiconductor light emitting device 150-1. The first connection electrode 370-1 may contact a portion of the passivation layer 157 of the first semiconductor light emitting device 150-1. The first connection electrode 370-1 may contact a portion of the first conductive electrodes 321-1, 322-1 of the first group of assembly lines 321 and / or the second group of assembly lines 322. The first connection electrode 370-1 may contact a portion of the second conductive electrodes 321-2, 322-2 of the first group of assembly lines 321 and / or the second group of assembly lines 322. The first connection electrode 370-1 may contact the first insulating layer 330 and the partition wall 340 at the first assembly hole 340H1.

[0257] On the other hand, the second insulating layer 350 may be formed at the periphery of the first semiconductor light emitting device 150-1 at the first assembly hole 340H1. Since the second insulating layer 350 is formed to be thick, it may be formed of an organic material that is easy to form a thickness, but is not limited thereto.

[0258] The second insulating layer 350 may be disposed on the first connection electrode 370-1 in the first assembly hole 340H1. The top surface of the second insulating layer 350 may be located on the same horizontal line as the top surface of the partition wall 340. The top surface of the second insulating layer 350 may be located on the same horizontal line as the top surface 151a of the first semiconductor light emitting device 150-1. The second insulating layer 350 may strengthen the fixing force of the first connection electrode 370-1 and the first semiconductor light emitting device 150-1.

[0259] like Fig.24As shown, the electrode wiring 360 can be formed on the substrate 310. The electrode wiring 360 can be formed by depositing and patterning a conductive film on the substrate 310. That is, when forming the electrode wiring 360, only a deposition process is required, and a contact hole forming process is not required, so the process is simple and the process time can be shortened.

[0260] The electrode wiring 360 may be formed on the first semiconductor light emitting device 150 - 1 . The electrode wiring 360 may be formed on the partition wall 340 . The electrode wiring 360 may be formed on the second insulating layer 350 .

[0261] Although not shown, the electrode wiring 360 may be formed not only on the first subpixel PX1 including the first semiconductor light emitting device 150 - 1 , but also on the second subpixel PX2 including the second semiconductor light emitting device 150 - 2 and the third subpixel PX3 including the third semiconductor light emitting device 150 - 3 .

[0262] The electrode wiring 360 is integrally formed on the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 in the same process, so the structure is simple and the process is easy.

[0263] The display device 300 can be manufactured by forming the electrode wiring 360 through a subsequent process.

[0264] On the other hand, the display device 300 is described above with respect to the unit pixel PX including the first subpixel PX1 , the second subpixel PX2 , and the third subpixel PX3 .

[0265] However, in order to realize an image in the display device 300 , a display panel including a plurality of pixels PX and various circuit devices for driving the display panel are required.

[0266] Fig.25 is a block diagram showing a display device according to an embodiment.

[0267] Reference Fig.25 The display device 300 of the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving unit 30 , and a power supply circuit 50 .

[0268] exist Figure 6 The driving circuit 20, the scan driving unit 30 and the power supply circuit 50 are described in detail, and thus further description is omitted.

[0269] The display panel 10 may be divided into a display area DA and a non-display area NDA disposed around the display area DA. The display area DA is an area where pixels PX are formed to display an image.

[0270] exist Figures 11 to 13The structure of each pixel PX is shown in FIG.

[0271] In an embodiment, the electrode wiring 360 may be integrally configured on the display area DA of the display panel 10 .

[0272] That is, the electrode wiring 360 is not only arranged in the pixels PX in the display area DA but also integrally arranged in the boundary area between the pixels PX, so the structure is simple and the process is easy.

[0273] Reference Figures 11 to 13 as well as Fig.25 The electrode wiring 360 may be disposed on the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, the third semiconductor light emitting device 150-3, the partition wall 340, and the second insulating layer 350 of each pixel PX in the display area DA. The top surface and / or the bottom surface of the electrode wiring 360 may have a horizontal surface.

[0274] On the other hand, the above-mentioned display device may be a display panel. That is, in the embodiment, the display device and the display panel may be understood to have the same meaning. In the embodiment, the display device in a practical sense may include a display panel and a controller (or processor) capable of controlling the display panel in order to display an image.

[0275] The detailed descriptions described above should not be interpreted as limiting in all aspects, but should be understood as exemplary. The scope of the embodiments should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiments are included in the scope of the embodiments.

[0276] Industrial Applicability

[0277] The embodiment can be applied to the display field of displaying images or information. The embodiment can be applied to the display field of displaying images or information using semiconductor light emitting devices. The semiconductor light emitting device can be a micron-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

[0278] For example, the embodiments can be applied to TVs, signboards, smartphones, mobile phones, mobile terminals, HUDs for automobiles, backlight units for notebook computers, and display devices for VR or AR.

Claims

1. A display device, wherein: include: substrate; A first set of assembly lines, arranged on the substrate; a second set of assembly lines, arranged on the substrate; a partition wall, arranged on the first group of assembly lines and the second group of assembly lines and comprising an assembly hole; A semiconductor light emitting device, disposed in the assembly hole; A connecting electrode is arranged on the side of the semiconductor light emitting device; as well as Electrode wiring, arranged on the upper side of the semiconductor light emitting device; The first group of assembly lines and the second group of assembly lines each include: a first conductive electrode vertically overlapping the assembly hole; as well as The second conductive electrode is connected to the first conductive electrode and vertically overlaps the semiconductor light emitting device.

2. The display device according to claim 1, wherein: The substrate includes a first sub-pixel, a second sub-pixel and a third sub-pixel; The semiconductor light emitting device comprises: At least one first semiconductor light emitting device, disposed in the first sub-pixel; at least one second semiconductor light emitting device, disposed in the second sub-pixel; and At least one third semiconductor light emitting device, configured in the third sub-pixel; The first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device respectively emit different lights.

3. The display device according to claim 2, wherein: The electrode wiring is commonly connected to the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device.

4. The display device according to claim 2, wherein: The connecting electrode comprises: A first connecting electrode is arranged at a periphery of the first semiconductor light emitting device of the first sub-pixel; a second connecting electrode disposed at a periphery of the second semiconductor light emitting device of the second sub-pixel; and The third connecting electrode is arranged at the periphery of the third semiconductor light emitting device of the third sub-pixel.

5. The display device according to claim 4, wherein: The first semiconductor light emitting device, the second semiconductor light emitting device and the third semiconductor light emitting device each include: a light emitting layer; and A side electrode extending from the lower side of the light emitting layer and arranged on the side of the light emitting layer; The first connection electrode, the second connection electrode, and the third connection electrode are respectively in contact with the side electrodes.

6. The display device according to claim 4, wherein: The first connection electrode, the second connection electrode, and the third connection electrode are respectively connected to at least one of the first group of assembly lines and the second group of assembly lines.

7. The display device according to claim 6, wherein: The first connecting electrode, the second connecting electrode and the third connecting electrode are respectively in contact with the first conductive electrode.

8. The display device according to claim 7, wherein: The first connecting electrode, the second connecting electrode and the third connecting electrode are respectively in contact with the second conductive electrode.

9. The display device according to claim 2, wherein: The electrode wiring is arranged on the first semiconductor light emitting device, the second semiconductor light emitting device, the third semiconductor light emitting device, and the partition wall.

10. The display device according to claim 2, wherein: The electrode wiring is in contact with top surfaces of the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device.

11. The display device according to claim 10, wherein: The top surfaces of the first semiconductor light emitting device, the second semiconductor light emitting device, and the third semiconductor light emitting device are respectively located on the same horizontal line as the top surface of the partition wall.

12. The display device according to claim 1, wherein: At least one of the first group of assembly lines and the second group of assembly lines is an anode electrode; The electrode wiring is a cathode electrode.

13. The display device according to claim 1, wherein: The first conductive electrode is a metal electrode.

14. The display device according to claim 1, wherein: The second conductive electrode is a transparent electrode; The electrode wiring is a reflective electrode.

15. The display device according to claim 1, wherein: The second conductive electrode is a reflective electrode; The electrode wiring is a transparent electrode.

16. The display device according to claim 1, wherein: The semiconductor light emitting device has an inclined surface such that a size of a lower side of the semiconductor light emitting device is larger than a size of an upper side.

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