Device for gallium oxide crystal growth and heating device

Abstract

The invention relates to the field of crystal growth, and discloses a device for gallium oxide crystal growth and a heating device, the device comprises a furnace body, and a crucible, a first heater and a second heater which are arranged in the furnace body; a mold for crystal forming is arranged in the crucible, and a growth gap is formed in the middle of the mold; the first heater comprises an induction heating coil arranged on the peripheral side of the crucible in a surrounding mode. The second heater comprises a resistance heating coil arranged above the induction heating coil, and the resistance heating coil comprises a plurality of independently arranged resistance coils; the two ends, arranged in the first direction, of the resistance coil are defined as first ends, and the two ends, arranged in the second direction, of the resistance coil are defined as second ends; from the first end to the second end, the distance between each point on the resistance coil and the mold is gradually reduced; the temperature of the side wall of the mold is lower than that of the middle of the mold, crystals are induced to grow and shoulder towards the side edge of the mold, and growth of large-size crystals is achieved.

Description

Technical Field

[0001] The invention relates to the field of crystal growth, and in particular to a device and a heating device for growing gallium oxide crystals. Background Art

[0002] Gallium oxide has emerged in recent years with its excellent physical and chemical properties and has become a rising star in the field of semiconductor materials. It is hailed as a model of the "fourth generation semiconductor material" following gallium nitride and silicon carbide. Gallium oxide not only shows a bandgap width, breakdown electric field strength and Baliga figure of merit far exceeding the previous three generations of semiconductor materials, but also its single crystal preparation technology is mainly achieved through the melt growth method, supplemented by a variety of epitaxial growth methods, which significantly reduces the technical threshold for material preparation. Compared with gallium nitride and silicon carbide, the preparation process of gallium oxide is more flexible and does not require extremely harsh growth conditions. This advantage indicates its great potential in device cost control and is expected to significantly reduce production costs. Therefore, with its dual advantages of excellent performance and cost-effectiveness, gallium oxide materials have shown extremely broad application prospects in many cutting-edge scientific and technological fields such as high-power electronic devices and deep ultraviolet solid-state optoelectronic devices. The growth methods of gallium oxide single crystal materials are rich and diverse, covering a variety of advanced methods such as flame melting, pulling, optical floating zone, guided mode method and Bridgman method. Among these methods, the guided mold method has become the core technology for the current commercial large-scale production of gallium oxide single crystals due to its customizable molds and high production efficiency.

[0003] Among the current production technologies, the existing guided mold growth technology usually adopts the induction coil heating method. The heating element of this method is mainly iridium, including iridium crucible, iridium mold and mold cover, etc. There are usually different types of thermal field structures above the iridium, which can play the role of heat preservation and adjustment of heat flow and air flow, but this method cannot accurately control the temperature and airflow above the crucible, and when growing large-sized gallium oxide, the crystal width is easy to not fill the mold groove, and ultimately the size cannot achieve the expected effect. Summary of the invention

[0004] The technical problem to be solved by the present invention is: how to make the width of the crystal fill the mold groove. In order to solve the above technical problem, the present invention provides a device for growing gallium oxide crystals, including a furnace body and a crucible, a mold, a first heater and a second heater arranged in the furnace body;

[0005] The mold is arranged on the crucible, and the mold is provided with a growth gap extending along a third direction;

[0006] The first heater comprises an induction heating coil disposed around the outer circumference of the crucible;

[0007] The second heater comprises a resistance heating coil arranged above the induction heating coil, and the resistance heating coil comprises a plurality of resistance coils arranged along a third direction; the resistance coils are both axisymmetric structures along the first direction and the second direction, and the two ends of the resistance coil along the first direction are respectively first ends, and the two ends along the second direction are respectively second ends; from any of the first ends to any of the second ends, the distance between each point on the resistance coil and the center point of the mold gradually decreases;

[0008] The first direction, the second direction and the third direction are perpendicular to each other.

[0009] The present invention also provides a heating device for gallium oxide crystal growth, comprising a resistance heating coil for heating a crystal growth mold and gallium oxide in the crystal growth mold, wherein the mold is provided with a growth gap extending along a third direction, and the resistance heating coil comprises a plurality of resistance coils arranged along the third direction, wherein the two ends of the resistance coil along the first direction are respectively first ends, and the two ends along the second direction are respectively second ends; from any of the first ends to any of the second ends, the distance between each point on the resistance coil and the center point of the mold gradually decreases.

[0010] The present invention also provides a heating coil, which is arranged above the induction heating coil. The heating coil includes a plurality of resistance coils independently arranged in parallel, and the plurality of resistance coils are used to form a temperature gradient distributed along a third direction.

[0011] The present invention also provides a heating coil, which is arranged above the induction heating coil. The heating coil includes a resistance coil spiraling upward along a third direction, and in the resistance coil, the diameter of each turn increases from bottom to top along the third direction. By increasing the diameter of the resistance coil at different heights, the resistance heating coil at a higher height is farther horizontally from the crystal, thereby forming a temperature gradient in the vertical direction.

[0012] Compared with the prior art, the device for growing gallium oxide crystals provided in the embodiment of the present invention has the following beneficial effects:

[0013] In the present invention, an additional resistance heating coil is arranged above the induction heating coil, and a vertical temperature gradient is provided by the resistance heating coil, thereby inducing the crystal to grow upward. Furthermore, the multiple resistance coils in the resistance heating coil are arranged independently, rather than in a spiral structure, which makes the temperature gradient distribution in the third direction, that is, the vertical direction, clearer and more obvious, and the crystal can grow upward better; in addition, the shape of the resistance coil makes the distance between the first end of the resistance coil and the mold greater than the distance between the second end of the resistance coil and the mold, so that the heating effect of the two ends of the mold along the first direction, that is, the two ends in the width direction of the mold, is worse, and the temperature of the crystal on both sides of the mold is lower than the temperature in the middle, which is more conducive to the growth of the crystal to both sides, thereby inducing the crystal to completely shoulder and achieve the growth of large crystals.

[0014] The diameter of the spiral resistance coil gradually increases from bottom to top, and a temperature gradient can be formed in the vertical direction and the first direction to induce the growth and shouldering of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a front view of the internal structure of the present invention;

[0016] Figure 2 is a schematic structural diagram of the second heater in the present invention;

[0017] Figure 3 It is a simplified diagram of the position structure of the resistance coil in the present invention;

[0018] Figure 4 It is a structural schematic diagram of the resistance coil in the present invention;

[0019] Figure 5 is another structural schematic diagram of the resistance coil in the present invention;

[0020] Figure 6 It is another structural schematic diagram of the resistance coil in the present invention.

[0021] In the figure: 1, furnace body; 11, lifting system; 111, support platform; 112, support rod; 113, lifting control device; 12, lifting system; 121, lifting control device; 122, seed crystal rod; 123, seed crystal chuck; 13, infrared thermometer;

[0022] 2. Crucible;

[0023] 3. a first heater; 31. an induction heating coil;

[0024] 4. second heater; 41. resistance heating coil; 411. resistance coil; 4111. first end; 4112. second end; 4113. first resistance line segment; 4114. second resistance line segment; 42. control unit;

[0025] 5. mold; 51. growth gap; 511. slit; 512. V-groove. DETAILED DESCRIPTION

[0026] The specific implementation of the present invention is further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0027] like Figure 1 As shown, a preferred embodiment of the present invention provides a device for growing gallium oxide crystals, which includes a furnace body 1 and a crucible 2, a mold 5, a first heater 3 and a second heater 4 arranged in the furnace body 1;

[0028] The mold 5 is disposed on the crucible 2, and the mold 5 is provided with a growth gap 51 extending along a third direction;

[0029] The first heater 3 includes an induction heating coil 31 disposed around the outer periphery of the crucible 2;

[0030] The second heater 4 includes a resistance heating coil 41 disposed above the induction heating coil 31, and the resistance heating coil 41 includes a plurality of resistance coils 411 disposed along the third direction; the resistance coil 411 is an axisymmetric structure along the first direction and the second direction, and the two ends of the resistance coil 411 along the first direction are respectively first ends 4111, and the two ends along the second direction are respectively second ends 4112; from any first end 4111 to any second end 4112, the distance between each point on a resistance coil 411 and the center point of the mold 5 gradually decreases;

[0031] The first direction, the second direction and the third direction are perpendicular to each other. The third direction is the opening direction of the growth gap 51 of the mold 5 . The first direction is the width direction of the mold 5 , and the second direction is the thickness direction of the mold 5 .

[0032] Specifically, the direction marked as X in the drawing is the first direction, the direction marked as Y is the second direction, and the direction marked as Z is the third direction. In the existing technology, only an induction heating coil 31 is often provided, and the induction heating coil 31 is used to generate heat in the crucible 2 to melt gallium oxide. Then, the gallium oxide melt enters the growth gap 51 of the mold 5 through capillary force and grows upward, and finally forms a crystal that is pulled out of the mold 5.

[0033] In this process, since the induction coil is basically a circular structure and the mold 5 is a plate structure, the two ends of the mold 5 in the width direction, that is, the two ends in the second direction, are closer to the side walls of the crucible 2. Therefore, the heating effect and temperature of the crystal in the width direction of the mold 5 are better and higher. This also causes the temperature of the crystal in the middle of the mold 5 to be higher than the temperature on both sides of the mold 5. In the guided mold method for growing single crystals, the growth of the crystal is mainly affected by the temperature gradient at the solid-liquid cross section. This causes the crystal to be difficult to grow along its width direction, that is, the first direction, during its growth process. The shoulder cannot be completely released during the crystal growth process, and it is difficult to achieve the growth of large crystals.

[0034] In the present invention, a resistance heating coil 41 is arranged above the induction heating coil 31, and each resistance coil 411 in the resistance heating coil 41 is independently arranged, so that a vertical temperature gradient is formed above the growth gap 51 of the mold 5, so that the crystal can grow upward along the vertical direction, that is, the third direction, which is convenient for the subsequent crystal to grow with the pulling work. The independent arrangement of each resistance coil 411 makes it possible to adjust the heating power of each resistance coil 411 separately, thereby generating a more obvious and clear temperature gradient in the third direction, which is convenient for the crystal to grow upward.

[0035] In addition, the most important point is the external structure of the resistance coil 411. The structure of the resistance coil 411 has two symmetry axes, which intersect vertically and extend in the first direction and the second direction respectively. The end of the resistance coil 411 set along the first direction is defined as the first end 4111, and the end set along the second direction is defined as the second end 4112. The definitions of the first direction and the second direction are set according to the setting direction of the mold 5. The mold 5 is generally a plate-shaped structure with the characteristics of small thickness and large width. According to the setting of the mold 5, the direction set along the width direction of the mold 5 is the first direction, and the direction set along the thickness direction of the mold is the second direction. Under this definition, the specific structure of the resistance coil 411 is that from the first end 4111 to the second end 4112, the distance between each point on the resistance coil 411 and the mold 5 gradually decreases, and from the second end 4112 to the first end 4111, the distance between each point on the resistance coil 411 and the mold 5 gradually increases, and the distance between the second end 4112 and the mold 5 is the smallest. It should be noted that the distance between each point of the resistance coil 411 and the mold 5 refers to the distance between each point of the resistance coil 411 and a fixed center point in the mold 5 .

[0036] Of course, in some other embodiments, the distance between the first end 4111 and the side wall of the mold 5 is also greater than the distance between the second end 4112 and the rear wall or front wall of the mold 5. Under this structure of the resistance coil 411, the distance between the two sides of the template and the resistance coil 411 is greater, and the temperature of the middle part of the crystal in the growth gap 51 of the mold 5 is lower than the temperature of the two sides, guiding the gallium oxide melt to flow to the two sides to form crystals, inducing the crystal to completely shoulder, thereby achieving the growth of large crystals.

[0037] In some embodiments, the shortest route from any first end 4111 to any second end 4112 of the resistance coil 411 includes a first resistance segment 4113 and a second resistance segment 4114 connected in sequence, and the first resistance segment 4113 is an arc structure and the second resistance segment 4114 is an arc or straight structure.

[0038] like Figures 2 to 4 As shown, the angle A between the two segments from the two ends of the first resistance segment 4113 to the virtual center of the first resistance segment 4113 is not less than 90 degrees, and the second resistance segment 4114 is configured as a straight line shape.

[0039] like Figure 5 As shown, in some other embodiments, the angle A between the two line segments from the two ends of the first resistance segment 4113 to the virtual center of the first resistance segment 4113 is less than 90 degrees, the angle B between the two line segments from the two ends of the second resistance segment 4114 to the virtual center of the second resistance segment 4114 is less than 90 degrees, and the virtual centers of the first resistance segment 4113 and the second resistance segment 4114 are located on the same side of the first resistance segment 4113.

[0040] like Figure 6 As shown, in some other embodiments, the angle A between the two line segments from the two ends of the first resistance segment 4113 to the virtual center of the first resistance segment 4113 is not less than 90 degrees, the angle B between the two line segments from the two ends of the second resistance segment 4114 to the virtual center of the second resistance segment 4114 is less than 90 degrees, and the virtual centers of the first resistance segment 4113 and the second resistance segment 4114 are located on both sides of the first resistance segment 4113.

[0041] Specifically, the outer structure of the resistance coil 411 includes a band-aid type ( Figure 4 ), Rugby ( Figure 5 ) and diaper-style ( Figure 6) and other structures. In these structures, from the first end 4111 to the second end 4112, the distance from each point on the resistance coil 411 to the center point of the mold 5 gradually decreases. Of course, it can be understood that the specific shape structure of the resistance coil 411 is not limited to the above embodiment. Any resistance coil 411 that satisfies the requirement that the distance from each point on the resistance coil 411 to the center point of the mold 5 gradually decreases from the first end 4111 to the second end 4112 should be within the protection scope of this application. In addition, the arc segment set at the connection between the first resistance segment 4113 and the second resistance segment 4114 should be regarded as a fillet, which should also be within the protection scope of the present invention.

[0042] In some embodiments, the distance between the two second ends 4112 of the resistance coil 411 is greater than the diameter of the crucible 2. Specifically, the distance between the two second ends 4112 is greater than the diameter of the crucible 2 in order to cooperate with the subsequent lifting system 11, so that the lifting system 11 can drive the crucible 2 to move up and down, thereby adjusting the temperature range to optimize the growth process of the crystal.

[0043] In some embodiments, adjacent resistance coils 411 are arranged in parallel vertically along the third direction, and the height intervals between adjacent resistance coils 411 are the same. The resistance heating coils 41 are configured so that the heating power of different resistance coils 411 decreases from bottom to top. Further, the resistance heating coils 41 are connected to a control unit 42 disposed outside the furnace body 1, and the control unit 42 can control the multiple resistance coils 411 to operate at different powers.

[0044] Specifically, the adjacent resistance coils 411 are arranged in parallel, and the height intervals between the adjacent resistance coils 411 are the same, so that in the third direction, the resistance heating coil 41 can better control the change of the temperature gradient, so that the temperature change in the third direction is more uniform and reasonable, and the crystal can be better guided to grow upward. In terms of specific temperature control, along the third direction, the heating power of the resistance coil 411 is gradually reduced from bottom to top, so that the farther away from the mold 5, the lower the temperature, and the easier it is for the crystal to grow and form. In a specific embodiment, the power difference between adjacent resistance coils 411 is a fixed value, and this fixed value can be set as needed; in another specific embodiment, the power difference between adjacent resistance coils 411 can change linearly or nonlinearly from bottom to top, and the farther away from the mold 5, the faster the heating power of the resistance coil 411 decreases, thereby facilitating the growth of the crystal. The control unit 42 can adjust the heating power of different resistance coils 411 by adjusting the voltage or current supplied to each resistance coil 411.

[0045] In addition, in a specific embodiment, the height difference between the bottom layer resistance coil 411 and the top layer resistance coil 411 in the resistance heating coil 41 is 7 cm to 10 cm, and the height difference between adjacent resistance coils 411 is 1 cm. At this size, the temperature control required for crystal growth is most reasonable, and the crystal growth process can be better optimized.

[0046] In some embodiments, the horizontal height of the top of the induction heating coil 31 is equal to or less than the horizontal height of the growth gap 51 of the mold 5. Further, the growth gap 51 includes a slit 511 disposed in the mold 5 and a V-shaped groove 512 disposed on the top of the mold 5, the V-shaped groove 512 is connected to the slit 511, and the distance between the top of the induction heating coil 31 and the bottom of the V-shaped groove 512 is 0 mm to 7 mm.

[0047] Specifically, the induction heating coil 31 utilizes the thermal effect formed by the induced current generated by the conductor in the alternating magnetic field to heat the crucible 2 itself, thereby melting the solid gallium oxide into liquid, and then utilizes the capillary force to move the molten gallium oxide upward along the slit 511 until it reaches the V-shaped groove 512. Subsequently, the molten gallium oxide is cooled into a solid crystal under the influence of temperature in the V-shaped groove 512 and is pulled out of the mold 5 by the pulling system 12 to form a gallium oxide crystal. The horizontal height of the top of the induction coil is smaller than the horizontal height of the growth gap 51 of the mold 5, so as to create a temperature-reduced environment at the V-shaped groove 512, so that the gallium oxide crystal can form a crystal in the V-shaped groove 512, thereby facilitating the growth of the crystal.

[0048] In some embodiments, a lifting system 11 and a pulling system 12 are provided in the furnace body 1, the lifting system 11 is arranged at the bottom of the crucible 2, and the pulling system 12 is arranged at the top of the crucible 2;

[0049] The lifting system 11 includes a support platform 111 disposed at the bottom of the crucible 2, a support rod 112 is connected to the support platform 111 away from the crucible 2, and the other end of the support rod 112 passes through the bottom wall of the furnace body 1 and is connected to a lifting control device 113;

[0050] The pulling system 12 includes a pulling control device 121 arranged on the outer side of the top of the furnace body 1 , the output end of the pulling control device 121 is connected to a seed crystal rod 122 , and the other end of the seed crystal rod 122 passes through the top wall of the furnace body 1 and is connected to a seed crystal chuck 123 .

[0051] Specifically, the growth control device in the lifting system 11 can control the position of the support platform 111 through the support rod 112, and then control the position of the crucible 2, so that the crucible 2 can move up and down along the third direction in the furnace body 1, so that during the crystallization process, it is convenient to adjust the temperature of the crystal in the V-groove 512, so that the temperature of the crystal in the V-groove 512 is the same or similar to the temperature of the solid-liquid interface of gallium oxide, so that the crystal can be formed in the V-groove 512 and completely shouldered, thereby optimizing the crystal growth process.

[0052] The seed crystal chuck 123 in the pulling system 12 can provide an attachment point for the crystal in the V-groove 512 to promote the growth of the crystal. At the same time, the pulling control device 121 can continuously pull the gallium oxide crystal away from the mold 5 through the seed crystal rod 122 to achieve continuous growth of the crystal.

[0053] In some embodiments, an infrared thermometer 13 is provided on the side wall of the furnace body 1. The infrared thermometer 13 can continuously monitor and feedback the temperature inside the furnace body 1, so as to facilitate the staff to adjust the heating power of the resistance coil 411 and the working state of the lifting system 11 and the pulling system 12.

[0054] In addition, the present invention also provides a heating device for growing gallium oxide crystals, including a resistance heating coil 41 for heating a crystal growth mold 5 and gallium oxide in the crystal growth mold 5, the mold 5 is provided with a growth gap 51 extending along a third direction, the resistance heating coil 41 includes a plurality of resistance coils 411 arranged along the third direction, the two ends of the resistance coil 411 along the first direction are first ends 4111, and the two ends along the second direction are second ends 4112; from any first end 4111 to any second end 4112, the distance between each point on a resistance coil 411 and the center point of the mold 5 gradually decreases.

[0055] Preferably, a control unit 42 is further included, and the resistance heating coil 41 is connected to the control unit 42, and the control unit 42 can control the multiple resistance coils 411 to operate at different powers. Among them, each resistance coil 411 in the resistance heating coil 41 is independently arranged, and adjacent resistance coils 411 are arranged in parallel.

[0056] The present invention further provides a heating coil, which is arranged above the induction heating coil 31. The heating coil includes a plurality of resistance coils 411 independently arranged in parallel. The plurality of resistance coils 411 are used to form a temperature gradient distributed along a third direction.

[0057] In summary, the embodiment of the present invention provides a device for growing gallium oxide crystals, which forms a temperature gradient along the third direction above the mold 5 by setting a resistance heating coil 41 above the induction heating coil 31, so as to facilitate the growth and molding of the gallium oxide crystals along the third direction. The resistance coils 411 in the resistance heating coil 41 are independently arranged and parallel to each other, so that a more obvious and clear temperature gradient can be formed in the third direction, making it easier for the gallium oxide crystals to grow upward. In addition, the special structural shape of the resistance coil 411 also makes the temperature on both sides of the mold 5 lower than the temperature in the middle of the mold 5, so that the gallium oxide crystals can be induced to grow along the first direction toward the directions of the two sides of the mold 5, inducing the crystals to fully expand their shoulders and achieve the growth of large-sized crystals.

[0058] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. A device for growing gallium oxide crystals, characterized in that: It comprises a furnace body, a crucible, a mold, a first heater and a second heater arranged in the furnace body; The mold is arranged on the crucible, and the mold is provided with a growth gap extending along a third direction; The first heater comprises an induction heating coil disposed around the outer circumference of the crucible; The second heater comprises a resistance heating coil arranged above the induction heating coil, and the resistance heating coil comprises a plurality of resistance coils arranged along a third direction; the resistance coils are both axisymmetric structures along the first direction and the second direction, and the two ends of the resistance coil along the first direction are respectively first ends, and the two ends along the second direction are respectively second ends; from any of the first ends to any of the second ends, the distance between each point on the resistance coil and the center point of the mold gradually decreases; The first direction, the second direction and the third direction are perpendicular to each other.

2. The device for growing gallium oxide crystals according to claim 1, characterized in that: The shortest route from any first end to any second end of the resistance coil includes a first resistance line segment and a second resistance line segment connected in sequence, the first resistance line segments are arc-shaped structures, and the second resistance line segments are arc-shaped or straight-line structures.

3. The device for growing gallium oxide crystals according to claim 2, characterized in that: An included angle A between two line segments from the two ends of the first resistance line segment to the virtual center of the first resistance line segment is not less than 90 degrees, and the second resistance line segment is configured as a straight line.

4. The device for growing gallium oxide crystals according to claim 2, characterized in that: An angle A between two line segments from the two ends of the first resistance line segment to the virtual center of the first resistance line segment is less than 90 degrees, an angle B between two line segments from the two ends of the second resistance line segment to the virtual center of the second resistance line segment is less than 90 degrees, and the virtual centers of the first resistance line segment and the second resistance line segment are located on the same side of the first resistance line segment.

5. The device for growing gallium oxide crystals according to claim 2, characterized in that: An angle A between the two line segments from the two ends of the first resistance segment to the virtual center of the first resistance segment is not less than 90 degrees, an angle B between the two line segments from the two ends of the second resistance segment to the virtual center of the second resistance segment is less than 90 degrees, and the virtual centers of the first resistance segment and the second resistance segment are located on both sides of the first resistance segment.

6. The device for growing gallium oxide crystals according to claim 1, characterized in that: The distance between the two second ends of the resistance coil is greater than the diameter of the crucible.

7. The device for growing gallium oxide crystals according to claim 1, characterized in that: The adjacent resistance coils are arranged vertically and parallelly along the third direction, and the height intervals between the adjacent resistance coils are the same.

8. The device for growing gallium oxide crystals according to claim 7, characterized in that: The height difference between the bottom layer resistance coil and the top layer resistance coil in the resistance heating coil is 7 cm to 10 cm.

9. The device for growing gallium oxide crystals according to claim 7, characterized in that: The resistance heating coils are configured so that the heating powers of different resistance coils decrease from bottom to top.

10. The device for growing gallium oxide crystals according to claim 9, characterized in that: A control unit is also included. The resistance heating coil is connected to the control unit. The control unit can control the plurality of resistance coils to operate at different powers.

11. The device for growing gallium oxide crystals according to claim 1, characterized in that: The level of the top of the induction heating coil is equal to or less than the level of the mold growth gap.

12. The device for growing gallium oxide crystals according to claim 11, characterized in that: The growth gap includes a slit arranged in the mold and a V-shaped groove arranged on the top of the mold, the V-shaped groove is connected to the slit, and the distance between the top of the induction heating coil and the bottom of the V-shaped groove is 0mm to 7mm.

13. The device for growing gallium oxide crystals according to claim 1, characterized in that: A lifting system and a pulling system are provided in the furnace body, wherein the lifting system is arranged at the bottom of the crucible, and the pulling system is arranged at the top of the crucible; The lifting system comprises a support platform arranged at the bottom of the crucible, a support rod is connected to the side of the support platform away from the crucible, and the other end of the support rod passes through the bottom wall of the furnace body and is connected to a lifting control device; The pulling system comprises a pulling control device arranged on the outer side of the top of the furnace body, the output end of the pulling control device is connected to a seed crystal rod, and the other end of the seed crystal rod passes through the top wall of the furnace body and is connected to a seed crystal chuck.

14. The device for growing gallium oxide crystals according to claim 1, characterized in that: The side wall of the furnace body is provided with an infrared thermometer.

15. A heating device for growing gallium oxide crystals, characterized in that: It includes a resistance heating coil for heating a crystal growth mold and gallium oxide in the crystal growth mold, the mold is provided with a growth gap extending along a third direction, the resistance heating coil includes a plurality of resistance coils arranged along the third direction, the two ends of the resistance coil along the first direction are respectively first ends, and the two ends along the second direction are respectively second ends; from any of the first ends to any of the second ends, the distance between each point on the resistance coil and the center point of the mold gradually decreases.

16. The heating device for gallium oxide crystal growth according to claim 15, characterized in that: A control unit is also included. The resistance heating coil is connected to the control unit. The control unit can control the plurality of resistance coils to operate at different powers.

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