Wafer testing device capable of being rapidly maintained

Abstract

The invention provides a wafer testing device capable of being rapidly maintained, and relates to the technical field of semiconductors, the wafer testing device comprises a fixed plate, the fixed plate is provided with a control module, and a power supply module, a probe card, a heating lifting module and at least one testing module which are connected with the control module, and a wafer to be tested is integrally arranged in the probe card. The power supply module is connected with the probe card to supply power to the to-be-tested wafer, a heater and a probe are arranged in the heating lifting module, and the heating lifting module is used for driving the to-be-tested wafer in the probe card to be in contact with the probe and heating the to-be-tested wafer. The test module comprises a bottom plate which is in push-pull connection with the fixed plate along the first direction and a switch array measurement assembly which is arranged on the bottom plate and is in plug-in connection with the bottom plate along the second direction, and the switch array measurement assembly is used for testing different parameters of the to-be-tested wafer when the to-be-tested wafer is in contact with the probe. The switch array measurement assembly is in plug-in connection with the bottom plate, and the bottom plate is in push-pull connection with the fixed plate, thereby facilitating the replacement of the test module, and achieving the quick disassembly and assembly.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a wafer testing device that can be quickly maintained. Background Art

[0002] In recent years, wide bandgap semiconductor materials have been widely used in the manufacture of power electronic devices. Wide bandgap semiconductor devices represented by silicon carbide power devices are replacing traditional silicon-based devices and are widely used in DC-DC (direct current-to-direct current) converters, photovoltaic inverters, motor drives and other scenarios. However, due to differences in the properties of semiconductor materials (silicon carbide wafers have a rougher surface, a smaller diameter, and a hardness close to diamond), the production and manufacturing of silicon carbide power devices faces greater challenges and the yield rate is low. Since the silicon carbide power module contains multiple chips, the failure of one chip will affect the entire module, so wafer-level reliability screening can greatly improve the yield rate of the packaged module and reduce the cost caused by module failure.

[0003] Silicon carbide wafer reliability test equipment is a special equipment for high-temperature reliability screening of silicon carbide power chips at the wafer stage, which is an urgent need of power semiconductor packaging and testing manufacturers. HTGB (High-Temperature Gate Bias) and HTRB (High-Temperature Reverse Bias) tests are a conventional test for reliability screening. The test adds gate bias or reverse bias to the main blocking junction of the device under test at high temperature with a voltage close to the maximum rated voltage, and examines the leakage current change of the device under high temperature and long-term reverse bias voltage.

[0004] Existing domestic and foreign equipment of this type is large in size. While ensuring high voltage protection, it often has complex structural design and is difficult to disassemble and assemble. When electrical components fail, the disassembly, repair and replacement of the board requires a lot of cost, which is not conducive to improving test efficiency. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a wafer testing device that can be quickly maintained, capable of rapid disassembly and assembly, and improving installation speed and testing efficiency.

[0006] On the one hand, an embodiment of the present application provides a wafer testing device that can be quickly maintained, including a fixed plate, on which a control module is arranged, and a power supply module, a probe card, a heating and lifting module and at least one test module respectively connected to the control module, wherein a wafer to be tested is integrally arranged in the probe card, the power supply module is connected to the probe card to supply power to the wafer to be tested, a heater and a probe are arranged in the heating and lifting module, the heating and lifting module is used to drive the wafer to be tested in the probe card to contact the probe and heat the wafer to be tested, the test module includes a bottom plate push-pull connected to the fixed plate along a first direction, and a switch array measurement component arranged on the bottom plate and plugged into the bottom plate along a second direction, the switch array measurement component is used to test different parameters of the wafer to be tested when the wafer to be tested is in contact with the probe, and the first direction is perpendicular to the second direction.

[0007] Optionally, the switch array measurement component includes a plurality of measurement boards arranged in an array, the measurement boards are plugged into the base plate, each of the measurement boards is provided with a plurality of arrays of switches, and the plurality of arrays of switches are connected to the wafer to be measured.

[0008] Optionally, a first connector is provided on the measurement board, and a second connector is provided on the base plate, and the measurement board is plugged into the base plate by plugging the first connector into the second connector.

[0009] Optionally, a slide rail is provided on the fixed plate, and the bottom plate is slidably connected to the slide rail so that the bottom plate can be pushed and pulled along the fixed plate.

[0010] Optionally, a limiting structure is further provided on the fixed plate, and the limiting structure is located at the end of the bottom plate when it is pushed along the first direction. When the limiting structure abuts against the end of the bottom plate, the bottom plate is pushed into place on the fixed plate.

[0011] Optionally, a cylinder is provided in the heating and lifting module, the cylinder is connected to the probe card, the probe card is located between the cylinder and the probe, and the probe card is driven to approach or move away from the probe by extending and retracting the cylinder.

[0012] Optionally, the heater is located below the probe card along a third direction, and when the cylinder drives the probe card to contact the probe, the heater contacts the probe card to heat the wafer to be tested in the probe card, and the third direction, the first direction and the second direction are perpendicular to each other.

[0013] Optionally, at least two positioning structures are provided in the heating lifting module for positioning and pressing the probe.

[0014] Optionally, the probe card is located in the heating and lifting module, and the power supply module and the control module are arranged on one side of the probe card along the second direction.

[0015] Optionally, a switching module connected to the control module is further included, wherein the switching module is located between the power supply module and the control module and is used to realize switching between high voltage and low voltage of the power supply module.

[0016] The embodiment of the present application provides a quickly maintainable wafer testing device, wherein a control module, a power supply module, a probe card, a heating and lifting module and at least one test module are arranged on a fixed plate, a wafer to be tested is integrally arranged in the probe card, the power supply module is connected to the probe card to supply power to the wafer to be tested, a heater and a probe are arranged in the heating and lifting module, the heating and lifting module is used to drive the wafer to be tested in the probe card to contact with the probe and heat the wafer to be tested, the test module comprises a base plate push-pull connected to the fixed plate along a first direction and a switch array measurement component arranged on the base plate and plugged into the base plate along a second direction, the switch array measurement component is used to test different parameters of the wafer to be tested when the wafer to be tested is in contact with the probe, and the first direction is perpendicular to the second direction.

[0017] The switch array measurement component is arranged on the base plate, and the switch array measurement component includes a plurality of array measurement boards, and the measurement boards and the base plate are plugged in board-to-board to facilitate the disassembly and assembly of the switch array measurement component. The base plate is connected to the fixed plate in a push-pull manner, and the test module can be pulled out of the fixed plate as a whole through the base plate, which is convenient for the overall replacement of the test module, so as to realize the rapid disassembly and assembly of the wafer test device that can be quickly maintained, facilitate maintenance, improve test efficiency, and save labor costs. When the wafer test device that can be quickly maintained is in use, there are generally multiple layers of wafer test devices that can be quickly maintained stacked, so when a test module needs to be replaced in one layer of the wafer test device that can be quickly maintained, the test module can be pulled out as a whole through the base plate, and then the switch array measurement component can be replaced. The way in which the switch array measurement component and the base plate are plugged in facilitates the replacement and maintenance of the switch array measurement component. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 This is one of the structural schematic diagrams of the wafer testing device provided in this embodiment; Figure 2This is the second structural schematic diagram of the wafer testing device provided in this embodiment; Figure 3 This is the third structural schematic diagram of the wafer testing device provided in this embodiment; Figure 4 This is the fourth structural schematic diagram of the wafer testing device provided in this embodiment.

[0020] Icons: 100-power supply module; 200-switching module; 300-control module; 400-base plate; 401-slide rail; 402-limiting structure; 403-second connector; 500-probe card; 600-heating lifting module; 601-cylinder; 602-heater; 603-probe; 700-switch array measurement assembly; 701-measurement board; 702-first connector; 800-fixed plate; F1-first direction; F2-second direction; F3-third direction. DETAILED DESCRIPTION

[0021] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0022] In the description of this application, it should be noted that the terms "inside", "outside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed when in use, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0023] It should also be noted that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0024] After decades of development, the first generation of silicon semiconductors has been close to perfect crystals, and the research on silicon materials is also very thorough. The design and development of devices based on silicon materials have also gone through many generations of structural and process optimization and updates, and are gradually approaching the limits of silicon materials. The potential for performance improvement of devices based on silicon materials is getting smaller and smaller. The third generation of semiconductors represented by gallium nitride and silicon carbide have excellent material physical properties, providing greater room for further improving the performance of power electronic devices.

[0025] Compared with ordinary silicon materials, silicon carbide has outstanding advantages. It not only overcomes some of the shortcomings of ordinary silicon materials, but also has very good performance in power consumption, making it the most promising semiconductor material in the field of power electronics. Because of this, more and more semiconductor companies have begun to enter the SiC (silicon carbide) market. Due to its process and other defects, silicon carbide adds a lot of instability to the subsequent operation of finished products, forcing the industry to increase research and development efforts on wafer testing equipment in recent years.

[0026] Current wafer testing equipment is large in size, and while ensuring high voltage protection, it often has complex structural design and is difficult to disassemble and assemble. When electrical components fail, the disassembly, repair, and replacement of the boards requires a lot of cost.

[0027] To address this problem, an embodiment of the present application provides a wafer testing device that can be quickly maintained (hereinafter referred to as the device), which can be quickly disassembled and maintained, providing convenience for the replacement of boards (measurement board 701) and probes 603 and equipment maintenance. The device is used in conjunction with a host, is compatible with high-temperature aging, HTGB and HTRB tests, and can effectively complete the early screening of defective devices.

[0028] For details, please refer to Figure 1 , Figure 2 As shown, the embodiment of the present application provides a wafer testing device that can be quickly maintained, including: a fixing plate 800, on which a control module 300 is arranged, and a power supply module 100, a probe card 500, a heating and lifting module 600 and at least one test module respectively connected to the control module 300, a wafer to be tested is integrally arranged in the probe card 500, the power supply module 100 is connected to the probe card 500 to supply power to the wafer to be tested, a heater 602 and a probe 603 are arranged in the heating and lifting module 600, The heating lifting module 600 is used to drive the wafer to be tested in the probe card 500 to contact the probe 603 and heat the wafer to be tested. The test module includes a base plate 400 push-pull connected to the fixing plate 800 along a first direction F1 and a switch array measurement component 700 arranged on the base plate 400 and plugged into the base plate 400 along a second direction F2. The switch array measurement component 700 is used to test different parameters of the wafer to be tested when the wafer to be tested is in contact with the probe 603. The first direction F1 is perpendicular to the second direction F2.

[0029] The fixing plate 800 is used as a support, and various corresponding modules are arranged on the fixing plate 800. Among them, the power supply module 100 is generally a high and low voltage source meter, which is used for the output of high and low voltage sources and measurement calibration. The power supply module 100 supplies power to the wafer to be tested inside the probe card 500. In the present application, the probe card 500 and the wafer to be tested can be arranged in one piece.

[0030] The probe card 500 is located in the heating and lifting module 600, and a heater 602 and a probe 603 are arranged in the heating and lifting module 600. The heating and lifting module 600 can drive the probe card 500 to move toward the probe 603 and the heater 602. When the wafer to be tested in the probe card 500 moves to contact the probe 603, the heater 602 can heat the wafer to be tested, and the switch array measurement component 700 of the test module tests different parameters of the wafer to be tested to complete the high temperature aging, HTGB and HTRB tests of the wafer to be tested. The parameters of the wafer to be tested can also be tested at room temperature when the heater 602 is not working, and the specific settings are as needed. The switch array measurement component 700 has a switch array, and different switch combinations can realize the testing of different parameters of the wafer to be tested.

[0031] By controlling the above modules through the control module 300, automated information control can be realized to perform automated testing. For example, the control module 300 can control different switch arrays to be combined to perform testing of different parameters of the wafer to be tested.

[0032] In addition, in the wafer test device that can be quickly maintained provided in the embodiment of the present application, the switch array measurement component 700 is arranged on the bottom plate 400, and the switch array measurement component 700 includes a plurality of array measurement boards 701, and the measurement boards 701 and the bottom plate 400 are plugged in a board-to-board manner to facilitate the disassembly and assembly of the switch array measurement component 700. The bottom plate 400 is connected to the fixed plate 800 by push-pull, and the test module can be pulled out of the fixed plate 800 as a whole through the bottom plate 400, which facilitates the overall replacement of the test module, so as to realize the rapid disassembly and assembly of the device, facilitate maintenance, improve test efficiency, and save labor costs.

[0033] In the example of the present application, there are two test modules, which are symmetrically arranged on both sides of the probe card 500 along the first direction F1, and both test modules are connected to the probe card 500. In this way, more measurement boards 701 can be set to test more parameters of the wafer to be tested, so that the device can be compatible with more functional tests.

[0034] The quickly maintainable wafer testing device provided in the embodiment of the present application generally has multiple layers of devices stacked when in use. Therefore, when a test module in one layer of the devices needs to be replaced, the test module can be pulled out as a whole through the base plate 400, and then the switch array measurement component 700 can be replaced. The plug-in connection between the switch array measurement component 700 and the base plate 400 facilitates the replacement and maintenance of the switch array measurement component 700.

[0035] Furthermore, the switch array measurement component 700 includes a plurality of measurement boards 701 arranged in an array, the measurement boards 701 are plugged into the base plate 400, each measurement board 701 is provided with a plurality of array switches, and the plurality of array switches are connected to the wafer to be tested through a test circuit.

[0036] like Figure 1 , Figure 2 As shown, a plurality of measurement boards 701 are arranged in an array along a first direction F1, each measurement board 701 is provided with a first connector 702, and a plurality of second connectors 403 are correspondingly provided on the bottom plate 400, and the first connectors 702 and the second connectors 403 are plugged in one by one, so that each measurement board 701 can be quickly plugged in and out of the bottom plate 400 for easy assembly and disassembly. A plurality of array switches are provided on each measurement board 701, so that the switch array measurement component 700 has a plurality of array switches, and the switches are connected to the wafer to be measured, and different combinations of switches can be used to test different parameters of the wafer to be measured.

[0037] The fixed plate 800 is also provided with a slide rail 401, and the bottom plate 400 is slidably connected to the slide rail 401. The bottom plate 400 slides on the slide rail 401, so that the bottom plate 400 can be pushed and pulled along the fixed plate 800, so as to facilitate the replacement of the switch array measurement component 700 through the bottom plate 400. Through the provision of the slide rail 401, the bottom plate 400 can be pushed and pulled along the slide rail 401, so as to effectively maintain the rapid positioning of the test module, prevent various losses caused by the installation deviation of the test module, and improve the installation and replacement speed.

[0038] The fixing plate 800 is also provided with a limiting structure 402, which is located at the end of the bottom plate 400 when it is pushed along the first direction F1. Figure 1 The test module on the left side along the first direction F1 is pushed to the right, while the test module on the right side is pushed to the left along the first direction F1; when the limiting structure 402 abuts against the end of the bottom plate 400, the bottom plate 400 is blocked by the limiting structure 402 when it is pushed along the slide rail 401, and the bottom plate 400 is pushed into place on the fixed plate 800. Generally, the limiting structure 402 can be a structure such as a stop convex that can limit the bottom plate 400 from continuing to move forward.

[0039] For the heating lifting module 600, refer to Figure 2 As shown, a cylinder 601 is provided in the heating lifting module 600 , and the cylinder 601 is connected to the probe card 500 . The probe card 500 is located between the cylinder 601 and the probe 603 . The cylinder 601 is extended and retracted to drive the probe card 500 to move closer to or away from the probe 603 .

[0040] The extension and retraction of the cylinder 601 can drive the probe card 500 to approach the probe 603 below or to move away from the probe 603 . When the probe card 500 and the probe 603 are in close contact, the wafer to be tested in the probe card 500 contacts the probe 603 to form a test loop to test the wafer to be tested.

[0041] For example, there may be multiple probes 603 , and the multiple probes 603 contact the wafer to be tested correspondingly to form different test loops.

[0042] A heater 602 is also provided below the probe card 500 along the third direction F3. The third direction F3, the first direction F1 and the second direction F2 are perpendicular to each other. When the cylinder 601 drives the probe card 500 to contact the probe 603, the heater 602 also contacts the probe card 500. The heater 602 can heat the wafer to be tested in the probe card 500 to perform tests such as high-temperature aging.

[0043] By setting the heater 602, the heating temperature of the wafer to be tested can be controlled to ensure the accuracy of the high temperature aging test.

[0044] At least two positioning structures are provided in the heating lifting module 600 for positioning and pressing the probe 603. The probe 603 can be pressed into the heating lifting module 600 through the positioning structure to achieve rapid installation and fixation of the probe 603, thereby ensuring the stability of the probe 603 and the accuracy of the installation position.

[0045] In addition, it also includes a switching module 200 connected to the control module 300 and the power supply module 100. The switching module 200 can protect the circuit. The switching module 200 is controlled by the control module 300 to achieve switching between high voltage and low voltage of the power supply module 100.

[0046] like Figure 1 , Figure 2 , Figure 3 , Figure 4 As shown, the probe card 500 is located in the heating and lifting module 600, the power supply module 100 and the control module 300 are arranged on one side of the probe card 500 along the second direction F2, and the switching module 200 is located between the power supply module 100 and the control module 300. Through the layout setting of each module, the overall layout of the device can be made compact, the size of the device can be reduced, the replacement of related modules can be convenient, the maintenance of the device is beneficial, and the reliability of the device test can be ensured.

[0047] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A wafer testing device capable of rapid maintenance, characterized in that: include: A fixing plate (800) is provided on the fixing plate (800), and a control module (300), a power supply module (100), a probe card (500), a heating and lifting module (600) and at least one test module are respectively connected to the control module (300), a wafer to be tested is integrally provided in the probe card (500), the power supply module (100) is connected to the probe card (500) to supply power to the wafer to be tested, a heater (602) and a probe (603) are provided in the heating and lifting module (600), and the heating and lifting module (600) is used to drive the probe card (500) to move the probe card (500) and the heating and lifting module (6 ... 00), the wafer to be tested in contact with the probe (603), and the wafer to be tested is heated, the test module comprises a base plate (400) push-pull connected to the fixing plate (800) along a first direction (F1), and a switch array measurement component (700) arranged on the base plate (400) and plugged into the base plate (400) along a second direction (F2), the switch array measurement component (700) being used to test different parameters of the wafer to be tested when the wafer to be tested is in contact with the probe (603), and the first direction (F1) is perpendicular to the second direction (F2).

2. The wafer testing device capable of rapid maintenance according to claim 1, characterized in that: The switch array measurement component (700) comprises a plurality of measurement boards (701) arranged in an array, the measurement boards (701) being plugged into the base plate (400), each measurement board (701) being provided with a plurality of array switches, and the plurality of array switches being connected to the wafer to be measured.

3. The wafer testing device capable of rapid maintenance according to claim 2, characterized in that: The measuring board (701) is provided with a first connector (702), and the base plate (400) is provided with a second connector (403), and the measuring board (701) is plugged into the base plate (400) by plugging the first connector (702) and the second connector (403).

4. The wafer testing device capable of rapid maintenance according to claim 1, characterized in that: A slide rail (401) is provided on the fixed plate (800), and the bottom plate (400) is slidably connected to the slide rail (401), so that the bottom plate (400) can be pushed or pulled along the fixed plate (800).

5. The wafer testing device capable of rapid maintenance according to claim 1 or 4, characterized in that: A limiting structure (402) is also provided on the fixed plate (800), and the limiting structure (402) is located at the end of the bottom plate (400) when it is pushed along the first direction (F1). When the limiting structure (402) abuts against the end of the bottom plate (400), the bottom plate (400) is pushed into place on the fixed plate (800).

6. The wafer testing device capable of rapid maintenance according to claim 1, characterized in that: A cylinder (601) is arranged in the heating and lifting module (600), and the cylinder (601) is connected to the probe card (500). The probe card (500) is located between the cylinder (601) and the probe (603), and the cylinder (601) is extended and retracted to drive the probe card (500) to move closer to or away from the probe (603).

7. The wafer testing device capable of rapid maintenance according to claim 6, characterized in that: The heater (602) is located below the probe card (500) along the third direction (F3). When the cylinder (601) drives the probe card (500) to contact the probe (603), the heater (602) contacts the probe card (500) to heat the wafer to be tested in the probe card (500). The third direction (F3), the first direction (F1) and the second direction (F2) are perpendicular to each other.

8. The wafer testing device capable of rapid maintenance according to claim 1, 6 or 7, characterized in that: At least two positioning structures are arranged inside the heating lifting module (600) for positioning and pressing the probe (603).

9. The wafer testing device capable of rapid maintenance according to claim 1, characterized in that: The probe card (500) is located inside the heating and lifting module (600), and the power supply module (100) and the control module (300) are arranged on one side of the probe card (500) along the second direction (F2).

10. The wafer testing device capable of rapid maintenance according to any one of claims 1 to 4, 6 to 7 and 9, characterized in that: It also comprises a switching module (200) connected to the control module (300), the switching module (200) being located between the power supply module (100) and the control module (300) and being used to implement switching between high voltage and low voltage of the power supply module (100).

Images