Device and method for manufacturing electronic device

Abstract

An apparatus and a method of manufacturing an electronic device are provided. Specifically, the device sequentially comprises a hydrophilic and hydrophobic template manufacturing module, an ink coating module and a post-treatment module in the moving direction of a substrate, the hydrophilic and hydrophobic template manufacturing module comprises an activating treatment unit, a hydrophobic modification unit and a patterning hydrophilic treatment unit, and the activating treatment unit is used for activating the hydrophilic and hydrophobic template. The patterning hydrophilic treatment unit comprises a mask area and a hydrophilic treatment part, and the hydrophilic treatment part is arranged to enable the surface, not covered by a mask, of the substrate to be hydrophilized; the ink coating module is arranged to enable the surface of the hydrophilic substrate subjected to the patterning hydrophilic treatment to adsorb ink to form a wet film; the post-processing module includes a heat-treated component and a photonic sintered component. By adopting the device provided by the invention, high-flux, large-area, flexible, patterned and arrayed efficient processing of the electronic device can be realized, and the production cost can be greatly reduced while high resolution and small edge roughness are ensured.

Description

Technical Field

[0001] The present invention belongs to the field of material preparation, and relates to a device and method for manufacturing electronic devices, and specifically to a device and method for manufacturing electronic devices based on surface energy induced directional assembly technology. Background Art

[0002] In recent years, the continuous development of technologies such as the Internet of Things and artificial intelligence has put forward more complex requirements for the manufacturing equipment of electronic devices, such as high efficiency, large area, flexibility, patterning, and arraying.

[0003] Currently, the most commonly used method for manufacturing electronic device structures is to use vacuum deposition processes (such as magnetron sputtering, thermal evaporation, chemical vapor deposition, etc.) to grow micro-nano thick films, and then form pattern structures through photolithography and dry / wet etching (see reference 1).

[0004] In addition to the above methods, solution-based manufacturing processes have also been applied.

[0005] Among them, a type of process based on solution manufacturing of graphic micro-nano structures is called electronic printing technology, which prepares nanomaterials with different functions into printing inks and forms them on a substrate in the form of printing. The properties of the nanomaterials themselves give these patterns charge transfer properties, dielectric properties or photoelectric properties, thereby forming various semiconductor devices, photoelectric devices and photovoltaic devices. These include inkjet printing (see reference 2), reverse offset printing (see reference 3), gravure printing (see reference 4) and flexographic printing (see reference 5).

[0006] Another type of process for making patterned micro-nano structures based on solutions is called surface energy induced directed assembly technology. This method mainly changes the hydrophilicity and hydrophobicity of the substrate, treating the area where the device structure needs to be generated as hydrophilic and other areas as hydrophobic to form a hydrophilic and hydrophobic template; then the solution is brought into contact with the substrate surface and moves relative to it by spin coating, scraping, and pulling coating, thereby forming a patterned wet film consistent with the hydrophilic pattern; finally, a certain post-processing is performed to form the desired solid film (see reference 6).

[0007] At present, the traditional integrated circuit manufacturing technology has high manufacturing costs in the preparation methods for electronic devices. Some processes such as thin film deposition, dry etching, ion implantation, etc. require a vacuum environment (see references 7, 8, 9, and 10). The vacuuming leads to a long process time (tens of minutes to hours), and the vacuum environment is incompatible with flexible substrates. In addition, this process is a subtractive manufacturing method, which has problems such as large material waste and high production costs. The resolution of patterned thin films prepared by electronic printing technology is limited, and the highest resolution can only reach >2μm, and the prepared thin film patterns have micron-level edge roughness (see reference 11). Although surface energy induced directional assembly technology can currently achieve patterned thin film processing with a minimum resolution of 800nm ​​and an edge roughness of 16.5nm (see reference 12), it is still in the research stage. The manufacture of hydrophilic and hydrophobic templates and the post-processing of wet films require a long time (hours), and there is a lack of complete sets of equipment that can achieve high-throughput, large-area, flexible, patterned, and arrayed efficient processing.

[0008] References:

[0009] Cited literature 1: EMC Fortunato,PM C Barquinha,AC M BG Pimentel,et al.Fullytransparent ZnO thin-film transistor produced at room temperature[J].AdvancedMaterials,2005,17(5):590-594.

[0010] Cited literature 2: Kun Liang, Huihui Ren, Dingwei Li, et al. Fully-printed flexible n-type tin oxide thin-film transistors and logic circuits[J]. Journal of Materials Chemistry C, 2021, 9(35): 11662-11668.

[0011] Reference 3: Jaakko Asko Sneck, Yasuyuki Kusaka, et al. Reverse-offset printing of metal-nitrate-based metal oxide semiconductor ink for flexible TFTs[J]. Advanced Electronic Materials, 2019, 5(8): 1900272.

[0012] Citation 4: William J. Scheideler, Jaewon Jang, Muhammed Ahosan Ul Karim, et al. Gravure-printed sol-gels on flexible glass: a scalable route to additively patterned transparent conductors[J]. ACS Applied Materials & interfaces, 2015, 7(23): 12679 - 12687.

[0013] Citation 5: Jaakko Olli-Heikki Huttunen, Himadri Majumdar, et al. Flexography-printed In2O3 semiconductor layers for high-mobility thin-film transistors on flexible plastic substrate[J]. Advanced Materials, 2015, 27(44): 7168 - 7175.

[0014] Citation 6: Siqing Yuan, Zebin Fan, Guangji Wang, et al. Fabrication of flexible and transparent metal mesh electrodes using surface energy-directed assembly process for touch screen panels and heaters[J]. Advanced Science, 2023, 10(34): 2304990.

[0015] Citation 7: Suhui Lee, Jiyeong Shin, Jin Jang. Top interface engineering of flexible oxide thin-film transistors by splitting active layer[J]. Advanced Functional Materials, 2017, 27(11): 1604921.

[0016] Citation 8: Hye-Won Jang, Hyeong-Rae Kim, Ji-Hee Yang, et al. Stability improvements of InGaZnO thin-film transistors on polyimide substrates with Al2O3 buffer layer[J]. Japanese Journal of Applied Physics, 2018, 57(9): 090313.

[0017] Citation 9: Hyunjae Jang, Changyong Oh, Tae-Hwan Kim, et al. Low-temperature high-performance In-Ga-Sn-O thin-film transistors with Al2O3 grown by a facile dual-atomic layer deposition[J]. Journal of Alloys and Compounds, 2021, 875: 160053.

[0018] Citation 10: Domin Koh, Anyang Wang, Phil Schneider, et al. Introduction of a chemical-free metal PDMS thermal bonding for fabrication of flexible electrode by metal transfer onto PDMS[J]. Micromachines, 2017, 8(9): 280.

[0019] Cited literature 11: Jaewon Jang, Hongki Kang, Himamshu C. Nallan Chakravarthula, et al. Fully inkjet-printed transparent oxide thin film transistors using afugitive wettability switch [J]. Advanced Electronic Materials, 2015, 1(7): 1500086.

[0020] Cited literature 12: Jingwei Zhang, Guangji Wang, Zhimin Chai, et al. All-solution-processed electronics with sub-microscale resolution and nanoscale fidelityfabricated via ahumidity-controlled, surface energy-directed assembly process [J]. ACS Nano, 2024, 18(31): 20493-20503. Summary of the invention

[0021] Problem that the invention aims to solve

[0022] In order to address the deficiencies in the prior art, the present invention aims to provide a device and method for efficiently preparing electronic devices based on surface energy induced directional assembly technology, so as to solve the current problem of lack of high-throughput, large-area, flexible, patterned and arrayed efficient preparation of electronic devices.

[0023] Solutions for solving problems

[0024] It has been found that the above technical problems can be solved by implementing the following technical solutions:

[0025] [1] A device for manufacturing electronic devices, wherein the device comprises a hydrophilic and hydrophobic template manufacturing module, an ink coating module and a post-processing module in sequence in the direction of substrate movement,

[0026] in,

[0027] The hydrophilic and hydrophobic template manufacturing module includes an activation treatment unit, a hydrophobic modification unit and a patterned hydrophilic treatment unit, and the patterned hydrophilic treatment unit includes a mask area and a hydrophilic treatment component, and the hydrophilic treatment component is configured to make the substrate surface not covered by the mask hydrophilic;

[0028] The ink coating module is configured to allow the surface of the hydrophilic substrate that has been subjected to patterned hydrophilic treatment to absorb ink to form a wet film;

[0029] The post-processing module includes a heat treatment component and a photonic sintering component.

[0030] [2] The device according to [1], wherein in the hydrophilic and hydrophobic template manufacturing module,

[0031] The activation treatment unit is configured to perform activation treatment on the substrate so as to generate chemical activity on the surface of the substrate.

[0032] [3] The device according to [1] or [2], wherein in the hydrophilic-hydrophobic template manufacturing module,

[0033] The hydrophobic modification unit is configured to perform hydrophobic modification on the surface of the activated substrate so that the hydrophobicity of the substrate surface satisfies one or more of the following conditions:

[0034] 1) The static contact angle of ink is greater than 60°,

[0035] 2) The ink rolling angle is less than 35°,

[0036] 3) The ink contact angle hysteresis is less than 20°.

[0037] [4] The device according to any one of [1] to [3], wherein in the hydrophilic and hydrophobic template manufacturing module,

[0038] The patterned hydrophilic treatment unit includes a mask and the hydrophilic treatment component includes an ultraviolet light source component, and the ultraviolet light source component is configured to emit ultraviolet light with a wavelength below 200nm to irradiate the ultraviolet light to the substrate covered by the mask, so that patterned partitions are formed on the surface of the substrate;

[0039] Optionally, the patterned hydrophilic treatment unit further includes a pattern alignment component.

[0040] [5] The device according to any one of [1] to [4], wherein:

[0041] The ink includes one or more of an inorganic carbon-based semiconductor component, an organic semiconductor component, a metal component, a metal salt component, a metal oxide component or a metal sulfide component.

[0042] [6] The device according to [1]-[5], wherein in the post-processing module,

[0043] The heat treatment component and the photonic sintering component are configured to provide temperature and energy to quickly remove the solvent in the wet film and solidify the wet film to form a patterned dry film.

[0044] [7] A method for manufacturing an electronic device, wherein the method comprises the following steps in the direction in which the substrate moves:

[0045] The step of patterned hydrophilic treatment is as follows: the substrate with a hydrophobic surface is covered with a mask and irradiated with ultraviolet light to obtain a hydrophilic and hydrophobic template with a hydrophilic area;

[0046] Ink coating step: allowing the surface of the hydrophilic region of the hydrophilic / hydrophobic template to absorb ink to deposit a wet film;

[0047] Post-treatment step: post-treating the wet film to form a dry film;

[0048] Wherein, the substrate is selected from a silicon-based inorganic material substrate or a polymer material substrate;

[0049] The ultraviolet light irradiation includes irradiating the substrate covered by the mask with ultraviolet light of a wavelength below 200 nm under an inert gas, so that the light-transmitting portion of the substrate surface forms a hydrophilic region and the light-impermeable portion forms a hydrophobic region;

[0050] A wet film is deposited on the hydrophilic region of the hydrophilic-hydrophobic template by ink coating, while substantially no wet film exists on the hydrophobic region;

[0051] Optionally, before the patterned hydrophilic treatment step, the method further includes activating the substrate and performing hydrophobic modification.

[0052] [8] The method according to [7], wherein:

[0053] In the step of patterned hydrophilic treatment, the conditions of ultraviolet irradiation include: wavelength of 172nm, time of 1 to 900s, energy density of >10mW / cm 2 , the flow rate of inert gas is 10~30L / min.

[0054] [9] The method according to [7] or [8], wherein:

[0055] The post-processing step includes a drying step and / or a photon sintering step;

[0056] in,

[0057] The drying conditions include: temperature of 25 to 150°C and time of 1 to 15 minutes;

[0058] The conditions of the photon sintering include: the distance between the lamp window and the substrate is 1-500mm, the output voltage is 100-4000V, the pulse width is 100-15000μs, the flash interval is 100-40000ms, and the flash times are 1-600 times.

[0059]

[10] A method according to any one of [7]-[9], wherein the method is performed using an apparatus according to any one of [1]-[6].

[0060] Effects of the Invention

[0061] Through the implementation of the above technical solution, the beneficial effects of the present invention are:

[0062] The device of the present invention has a hydrophilic and hydrophobic template manufacturing module, an ink coating module, and a post-processing module as main functional areas. It can not only realize high-throughput, large-area, flexible, patterned, and arrayed efficient processing of electronic devices, but also can greatly reduce production costs (at least to one-tenth of traditional integrated circuit processes) while ensuring high resolution (the resolution can be below 1 μm) and small edge roughness (that is, the pattern edge line is straight and the edge roughness can be below 20 nm).

[0063] Compared with traditional integrated circuit production lines, the use of the apparatus of the present invention to prepare electronic devices can reduce the preparation time of thin-film transistors on PI flexible substrates by about 90%, the preparation time of thin-film transistors on silicon oxide rigid substrates by about 90%, and the preparation time of conductive serpentine silver wires on PDMS flexible substrates by about 96%. BRIEF DESCRIPTION OF THE DRAWINGS

[0064] Figure 1 is a schematic diagram of an activation treatment unit of the present invention;

[0065] Figure 2 is a schematic diagram of another activation treatment unit of the present invention;

[0066] Figure 3 is a schematic diagram of a patterned hydrophilic treatment unit of the present invention;

[0067] Figure 4 is a schematic diagram of an ink coating module of the present invention;

[0068] Figure 5 is a schematic diagram of a post-processing module of the present invention;

[0069] Figure 6 A schematic diagram of an apparatus for manufacturing an electronic device according to the present invention;

[0070] Figure 7 A schematic diagram of another apparatus for manufacturing an electronic device according to the present invention;

[0071] Figure 8 Schematic diagram of the preparation of hydrophilic and hydrophobic templates;

[0072] Fig. 9 The overall process flow for manufacturing electronic devices using the device of the present invention;

[0073] Fig.10 The hydrophobic effect diagram of the hydrophobically modified flexible PI substrate in Example 1 (advancing contact angle, receding contact angle, and rolling angle of the ink)

[0074] Fig.11 This is a hydrophobic effect diagram of the hydrophobically modified flexible PI substrate in Example 1 (static contact angle of ink);

[0075] Fig.12 The figure is a coating effect diagram of the indium oxide precursor solution as the ink in Example 1 (from left to right in time sequence, the ink descends and leaves a wet film in the hydrophilic area);

[0076] Fig.13 The patterned indium oxide film prepared on the PI flexible substrate in Example 1;

[0077] Fig.14 A four-layer patterned thin film device (the device is a thin film transistor) on a PI flexible substrate prepared by using the device of the present invention in Example 1;

[0078] Fig.15 A four-layer patterned thin film device (the device is a thin film transistor) on a silicon oxide rigid substrate prepared by using the device of the present invention in Example 2;

[0079] Fig.16 The conductive serpentine silver wire on the PDMS flexible substrate prepared by using the device of the present invention in Example 3.

[0080] Description of Reference Numerals

[0081] Figure 6 In the figure, 1: exhaust port; 2: moving guide rail; 3: plasma component; 4: sealing shell 1; 5: air inlet 1; 6: lifting platform 1; 7: liquid injection port; 8: sealing cover; 9: heating plate; 10: lifting platform 2; 11: mask; 12: air inlet; 13: microscope component; 14: microscope control component; 15: glass window 1; 16: ultraviolet light source component; 17: sealing shell 2; 18: air inlet 2; 19: plate holder; 20: lifting platform 3; 21: ink injection port; 22: ink; 23: ink outlet; 24: lifting platform 4; 25: glass window 2; 26: flash light component; 27: flash light control component; 28: sealing shell 3; 29: cooling component; 30: substrate; 31: manipulator.

[0082] Figure 7 In the figure, 1: exhaust port; 2: moving guide rail; 3: plasma component; 4: sealing shell 1; 5: air inlet 1; 6: lifting platform 1; 7: liquid injection port; 8: sealing cover; 9: heating plate; 10: lifting platform 2; 11: mask; 12: air inlet; 13: microscope component; 14: microscope control component; 15: glass window 1; 16: ultraviolet light source component; 17: sealing shell 2; 18: air inlet 2; 19: plate holder; 20: lifting platform 3; 21: flexible substrate; 22: ink injection port; 23: ink; 24: ink outlet; 25: lifting platform 4; 26: glass window 2; 27: flash light component; 28: flash light control component; 29: sealing shell 3; 30: cooling component; 31: roller. DETAILED DESCRIPTION

[0083] The following describes the embodiments of the present invention, but the present invention is not limited thereto. The present invention is not limited to the various structures described below, and various changes can be made within the scope of the invention claim, and the embodiments and embodiments obtained by appropriately combining the technical means disclosed in different embodiments and embodiments are also included in the technical scope of the present invention. In addition, all the documents recorded in this specification are cited in this specification as references.

[0084] Unless defined otherwise, technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0085] In this specification, the numerical range expressed using "a numerical value A to a numerical value B" means a range including the endpoints numerical values ​​A and B.

[0086] Unless otherwise required in this application, throughout the specification and the claims that follow, the term "comprising" should be interpreted in an open, inclusive sense, ie, "including, but not limited to."

[0087] In this specification, unless otherwise specified, the word "multiple" in "multiple", "multiple", "plurality", etc. means a numerical value of 2 or more.

[0088] In this specification, the term "substantially" or "essentially" means that the error is less than 1%, less than 0.8%, or less than 0.6% compared to the relevant perfect standard or theoretical standard. In addition, when "all" or "all" is mentioned in this specification, its meaning also refers to "all" or "all" in the sense of "substantially" or "essentially".

[0089] In this specification, unless otherwise specified, "%" means mass percentage.

[0090] In this specification, the word "may" includes both performing a certain process and not performing a certain process.

[0091] In the present specification, "optional" or "optionally" means that the event or situation described below may or may not occur, and the description includes cases where the event occurs and cases where it does not occur.

[0092] In this specification, the references to "some specific / preferred embodiments", "other specific / preferred embodiments", "embodiments", etc., mean that the specific elements (e.g., features, structures, properties and / or characteristics) described in connection with the embodiments are included in at least one embodiment described herein, and may or may not exist in other embodiments. In addition, it should be understood that the elements may be combined in various embodiments in any suitable manner.

[0093] In this specification, when "normal temperature" or "room temperature" is used, the temperature may be 23±2°C.

[0094] In this specification, the contact angle hysteresis refers to the difference between the advancing contact angle and the receding contact angle of the ink drop on the surface of the hydrophobic modified material. The smaller the value, the easier it is for the surface water drop to roll.

[0095] <First aspect>

[0096] A first aspect of the present invention provides an apparatus for manufacturing an electronic device.

[0097] Specifically, the device of the present invention comprises a hydrophilic and hydrophobic template manufacturing module, an ink coating module and a post-processing module in sequence in the direction of substrate movement. Preferably, these modules are connected in sequence.

[0098] (Hydrophilic and hydrophobic template manufacturing module)

[0099] The hydrophilic-hydrophobic template manufacturing module of the present invention mainly comprises an activation treatment unit, a hydrophobic modification unit and a patterned hydrophilic treatment unit.

[0100] Activation treatment unit

[0101] The activation treatment unit of the present invention mainly performs activation treatment on the substrate to make the substrate surface chemically active, thereby facilitating the subsequent introduction of the hydrophobic layer. Moreover, the chemical activity is at least partially or completely presented in the form of free radicals.

[0102] In the present invention, there is no particular limitation on the activation treatment components used in the activation treatment unit in principle, and conventional activation treatment components in the art can be used. In some specific embodiments, the activation treatment components that can be listed include any one of a plasma electrode assembly, an ultraviolet light emitting assembly, etc., preferably a plasma electrode assembly.

[0103] In some specific embodiments, when the activation treatment component is a plasma electrode assembly (such as Figure 1 As shown), the outside of the plasma electrode assembly has a sealed shell, wherein an air inlet is provided on one side of the sealed shell; by providing the air inlet, a gas duct can be used to introduce gas molecules, and by applying a high voltage and a high-frequency AC electric field, the gas molecules are ionized to form a plasma, and then the surface of the substrate material is treated by plasma, thereby introducing certain active groups on the substrate surface, so that the substrate surface is chemically active. A moving guide rail and a lifting platform capable of moving the substrate are provided below the sealed shell of the present invention, so that the entire activation treatment process can be carried out in a sealed environment. The present invention does not make any special restrictions on the material of the sealed shell, and it can be any feasible material in the art, such as a metal material. The present invention does not make any special restrictions on the gas molecules, and they can be some gases commonly used in the art, such as oxygen, nitrogen, argon, air, etc.

[0104] In some specific embodiments, when the activation treatment component is a UV light emitting component (eg Figure 2 As shown), considering the effect on the surface of the substrate, it is preferred to use a dual-wavelength ultraviolet lamp as the ultraviolet light-emitting component. That is, in the present invention, the ultraviolet rays at least include a radiation wave with a wavelength of 185nm and a radiation wave with a wavelength of 254nm. The outside of the ultraviolet light-emitting component has a sealed shell, wherein an air inlet is provided on one side of the sealed shell; by providing the air inlet, an air duct can be used to introduce inert gas to exclude air, thereby reducing the loss caused by the absorption of 185nm ultraviolet rays by oxygen in the air. A moving guide rail and a lifting platform capable of moving the substrate are provided under the sealed shell of the present invention, so that the entire activation treatment process can be carried out in a sealed environment. With respect to the inert gas, the present invention does not make any special limitation, and it can be some gases commonly used in the field that do not participate in chemical reactions, such as nitrogen, argon, etc.

[0105] It should be noted that the activation treatment of the substrate in the activation treatment unit is only to introduce more polar groups to facilitate the activity of the subsequent hydrophobic modification layer. For example, the activation treatment in the above-mentioned activation treatment unit can give the substrate surface certain active free radicals. Therefore, such activation treatment only increases the energy or energy level of the substrate surface by introducing specific active groups, rather than forming a complete hydrophilic modification layer. Therefore, the above-mentioned activation treatment of the present invention is not enough to cause performance (especially mechanical performance) losses to the substrate itself.

[0106] Hydrophobic modification unit

[0107] The hydrophobic modification unit of the present invention is mainly used to perform hydrophobic modification on the surface of the activated substrate.

[0108] In some specific embodiments, the hydrophobic modification unit has a sealing cover and a heating plate, wherein a liquid injection port is provided on one side of the sealing cover; by providing the liquid injection port, liquid hydrophobic molecules can be introduced using a liquid guide tube, thereby introducing hydrophobic molecules on the surface of the activated substrate. The hydrophobic modification unit of the present invention also has a lifting platform, which supports the heating plate and the substrate, so that the relative position and relative distance between the sealing cover and the heating plate, and between the heating plate and the substrate can be adjusted by the lifting platform, so that the entire hydrophobic modification process can be carried out in a sealed environment.

[0109] The present invention does not specifically limit the material of the sealing cover, and it can be any feasible material in the art, such as metal material.

[0110] The hydrophobic modification unit of the present invention can be used to hydrophobically modify the surface of the activated substrate so that the hydrophobicity of the substrate surface satisfies one or more of the following conditions:

[0111] 1) The static contact angle of ink is greater than 60°,

[0112] 2) The ink rolling angle is less than 35°,

[0113] 3) The ink contact angle hysteresis is less than 20°.

[0114] The hydrophobicity described in the present invention refers to that the static contact angle of the ink drop on the substrate surface under normal temperature conditions is greater than 60°, preferably greater than 62°, more preferably greater than 64°, and further preferably greater than 65°; and / or, the rolling angle is less than 35°, preferably less than 32°, more preferably less than 25°, and further preferably less than 20°; and / or, the contact angle hysteresis is less than 20°, preferably less than 18°, more preferably less than 15°, and further preferably less than 10°.

[0115] Patterned hydrophilic treatment unit

[0116] The patterned hydrophilic treatment unit of the present invention includes a mask area and a hydrophilic treatment component, wherein the mask area is provided with a mask. Further, considering that the hydrophilic treatment component acts on the substrate covered by the mask to achieve patterned partitioning, the hydrophilic treatment component preferably includes or uses an ultraviolet light source component.

[0117] The mask of the present invention can form a mask pattern structure on the surface of the substrate, so that a hydrophilic area is formed in the transparent part of the substrate surface (for example, the area not covered by the mask), and the opaque part (covered by the mask) retains the original hydrophobicity. Generally speaking, the mask is a pattern transfer master in the microelectronics manufacturing process, mainly composed of a substrate and a light shielding film. The substrate is divided into a resin substrate and a glass substrate. The glass substrate mainly includes a quartz substrate and a soda substrate. According to the different types of light shielding films, it can be divided into a hard light shielding film and a latex light shielding film.

[0118] In some specific embodiments, the mask pattern used by the mask includes one or more of functional patterns, alignment patterns, guide patterns and the like.

[0119] The ultraviolet light source component of the present invention is a non-illumination electric light source whose main purpose is to produce ultraviolet exposure. Therefore, the ultraviolet light source component of the present invention is used to emit ultraviolet light to irradiate the ultraviolet light to the substrate passing through the mask area so that the substrate surface forms a patterned partition. Generally speaking, ultraviolet light sources have fluorescence effects, biological effects, photochemical effects, and photoelectric effects. In addition, the frequency of ultraviolet light emitted by the ultraviolet light source component is higher than that of visible light. Generally, ultraviolet light can be divided into four types: UVA (wavelength 400nm~320nm, low frequency long wave), UVB (wavelength 320nm~280nm, medium frequency medium wave), UVC (wavelength 280nm~100nm, high frequency short wave), and EUV (100nm~10nm, ultra-high frequency).

[0120] In the present invention, considering the effect on the substrate covered by the mask to achieve patterned partitioning, it is preferred to use a high-frequency short-wave ultraviolet lamp as the ultraviolet light source component. That is, in the present invention, the wavelength of the ultraviolet light source is a high-frequency short-wave below 200nm, preferably 100 to 200nm. The inventors have found that when a 172nm wavelength ultraviolet light source is used for ultraviolet exposure, the patterned partitioning of the substrate surface can be completed within a few minutes.

[0121] Furthermore, the material used for the ultraviolet lamp tube in the ultraviolet light source component of the present invention can be highly transparent quartz, which will not affect the emission of ultraviolet rays.

[0122] In some specific embodiments, the ultraviolet light source component has a sealed shell on its outside, wherein an air inlet is provided on one side of the sealed shell; by providing the air inlet, an air duct can be used to introduce inert gas to exhaust air, thereby reducing the loss caused by the absorption of 172nm ultraviolet light by oxygen in the air. The sealed shell of the present invention is provided with a plate holder capable of embedding a mask, so that the entire exposure process can be carried out in a sealed environment.

[0123] The present invention does not specifically limit the material of the sealing shell, and it can be any feasible material in the art, such as metal, etc. The present invention does not specifically limit the inert gas, and it can be some commonly used gases in the art that do not participate in chemical reactions, such as nitrogen, argon, etc.

[0124] In some specific embodiments, a glass window is provided at least in the direction of the ultraviolet light source component close to the substrate and at the position of the substrate receiving ultraviolet rays. The glass window can ensure that the light path remains in an inert gas environment, thereby ensuring the propagation of ultraviolet rays.

[0125] Furthermore, in the present invention, in order to facilitate the formation of patterned partitions on the substrate surface, the patterned hydrophilic treatment unit also includes a supporting structure, which supports the ultraviolet light source component, glass window, mask and substrate, and adjusts the relative position and relative distance between the glass window and the substrate.

[0126] Specifically, the patterned hydrophilic treatment unit can be supported by a bracket, and the mask and substrate can be supported by a lifting platform, so that the relative position and relative distance between the glass window and the substrate can be adjusted by the lifting platform, so that the entire UV exposure process is carried out in an inert gas environment.

[0127] Further, in the present invention, in order to facilitate the construction of a multi-layer functional thin film structure on the substrate, the functional pattern of this time should have a certain position requirement with the functional pattern prepared last time. At this time, the substrate should be moved by the stage, and with the help of the pattern alignment component (such as a microscope component and a microscope control component), the alignment pattern, guide pattern, etc. prepared last time are aligned with the alignment pattern, guide pattern, etc. on the mask used this time. The switching method can be rotation switching or motion switching (such as Figure 3 Then, ultraviolet exposure treatment is performed.

[0128] The patterned hydrophilic treatment unit of the present invention can be used to perform patterned hydrophilic treatment on the substrate surface, that is, the area not covered by the mask is hydrophilized to obtain a hydrophilic area, while the area covered by the mask is still a hydrophobic area. The patterned partitioning treatment is implemented to prepare for entering the subsequent ink coating module.

[0129] (Ink coating module)

[0130] The ink coating module of the present invention is mainly used to make the surface of the hydrophilic substrate after patterned hydrophilic treatment absorb ink to form a wet film.

[0131] In some specific embodiments, the ink coating module is provided with an ink injection port; by providing the ink injection port, an ink guide tube can be used to inject ink into the ink coating module, and the ink can be injected into the ink coating module by using the following method: Figure 4 The coating method shown is used to apply the ink to the substrate surface to deposit a wet film.

[0132] (Post-processing module)

[0133] The post-processing module of the present invention mainly includes a heat treatment component and a photon sintering component, and thus can provide rapid post-processing.

[0134] The heat treatment component and the photon sintering component of the present invention are mainly used to provide temperature and energy to quickly remove the solvent in the wet film and solidify it to form a pattern dry film.

[0135] In some specific embodiments, the heat treatment component can be a heating plate or the like.

[0136] In some specific embodiments, the photon sintering component includes a flash light emitting component and a flash light control component (such as Figure 5 As shown). The photon wavelength of the flash light emitting component is 0.2-500 μm, that is, the flash light emitting component in the present invention can emit light of the full spectrum, including ultraviolet light, visible light, infrared light and the like.

[0137] In some specific embodiments, in the post-processing module, the photon sintering energy can be individually adjusted through the setting of the flash lamp control component, the height of the photon sintering lamp tube and the substrate platform can be adjusted, the photon sintering process can be programmed, the sintering times can be set, etc. The photon sintering is equipped with an integrated cooling component, and the cooling water temperature is controlled within 50°C.

[0138] In addition, the device of the present invention, in addition to the various units described above, may also include, without limitation, various auxiliary components for realizing the functions of the corresponding units, such as pipelines, power supply control components, automatic control units, etc.

[0139] Furthermore, the device of the present invention may have a conveying device, typically a conveyor belt or a robot, etc., to provide power for the substrate in the moving direction.

[0140] Specifically, the electronic device of the present invention is prepared mainly by sheet-to-sheet and roll-to-roll production methods.

[0141] Rigid materials (such as glass, silicon wafers, etc.) are mass-produced on a piece-by-piece basis.

[0142] Flexible plastic materials (such as polyimide PI, polyethylene terephthalate PET, polyethylene naphthalate PEN, polycarbonate PC, etc.) can be adhered or coated on a rigid substrate, or ultra-thin flexible glass, ultra-thin flexible metal, and can also be mass-produced piece by piece. For piece-to-piece production, a robot or the like is used for control and transmission (such as Figure 6 shown).

[0143] The flexible plastic material itself is in the form of a roll and can be produced roll-to-roll. For roll-to-roll production, rollers, conveyor belts, etc. are used for control and transmission (such as Figure 7 shown).

[0144] <Second Aspect>

[0145] A second aspect of the present invention provides a method for manufacturing an electronic device, wherein the method comprises the following steps in the direction in which the substrate moves:

[0146] The step of patterned hydrophilic treatment is as follows: the substrate with a hydrophobic surface is covered with a mask and irradiated with ultraviolet light to obtain a hydrophilic and hydrophobic template with a hydrophilic area;

[0147] Ink coating step: allowing the surface of the hydrophilic region of the hydrophilic / hydrophobic template to absorb ink to deposit a wet film;

[0148] Post-treatment step: post-treating the wet film to form a dry film;

[0149] Optionally, before the patterned hydrophilic treatment step, the method further includes activating the substrate and performing hydrophobic modification.

[0150] (Base material)

[0151] In principle, there is no particular limitation on the base material of the present invention, and it can be an inorganic material, an organic material, or a composite material of an inorganic material and an organic material.

[0152] In some specific embodiments, the inorganic material can be selected from one or more of carbon-based inorganic materials, silicon-based inorganic materials, and metal oxide materials. More specifically, it can be selected from one or more of silicon wafers, silicon oxide, sapphire, glass, quartz, ITO, etc.

[0153] In some other specific embodiments, the organic material can be selected from various polymer materials, more specifically, can be selected from one or more of polyimide materials, polyester materials, polycarbonate materials, silicone materials, etc., preferably, can be selected from polyimide (PI), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polydimethylsiloxane (PDMS), etc.

[0154] Furthermore, the base material of the present invention may also be a composite base formed of the above-mentioned various materials, for example, it may be a composite of a multi-layer structure.

[0155] In addition, the base material of the present invention may be a material having certain flexibility or a hard material having rigidity. Also, the shape of the base material is not particularly limited in principle, and may be, for example, a flat plate or a film.

[0156] In some embodiments of the present invention, the base material of the present invention can be a transparent material. In some more preferred embodiments, the base material has a transmittance of visible light of more than 50%, preferably more than 60%, more preferably more than 70%, and further preferably more than 90%.

[0157] In some embodiments of the present invention, the substrate is selected from a silicon-based inorganic material substrate or a polymer material substrate.

[0158] (Processing of base materials)

[0159] (1) Activation treatment steps

[0160] In the activation treatment step of the present invention, the substrate is activated to make the surface of the substrate chemically active. The main function of the activation treatment is to facilitate the subsequent introduction of a hydrophobic layer on the surface of the substrate.

[0161] In principle, there is no particular limitation on the activation treatment method, and conventional activation treatment methods in the art can be used. In some specific embodiments, the treatment methods that can be listed include one or more combinations of plasma treatment, ultraviolet light treatment, ultraviolet ozone treatment, chemical treatment, etc., as long as the substrate surface can be activated.

[0162] In some specific embodiments of the present invention, the surface of the substrate is subjected to plasma treatment at a power of 10 to 500 W for 10 seconds to 10 minutes to make the surface of the substrate chemically active.

[0163] Furthermore, in some specific embodiments of the present invention, the gas source for the plasma treatment is any one of oxygen, argon, nitrogen and air, preferably oxygen.

[0164] In some specific embodiments of the present invention, the ultraviolet light treatment includes any one of 172nm ultraviolet light treatment, 185nm and 254nm ultraviolet light treatment.

[0165] In some specific embodiments of the present invention, the ultraviolet ozone treatment includes ultraviolet ozone treatment under the condition of stage heating, etc.

[0166] In some specific embodiments of the present invention, the chemicals that can be used in the chemical treatment include one or more combinations of oxidants, acidic substances, and alkaline substances. In some specific embodiments, the oxidants that can be listed include hydrogen peroxide, etc., the acidic substances that can be listed include acetic acid, hydrochloric acid, sulfuric acid, etc., and the alkaline substances that can be listed include sodium hydroxide, ammonia water, etc.

[0167] (2) Hydrophobic modification steps

[0168] In the hydrophobic modification step of the present invention, the surface of the substrate after activation treatment is hydrophobically modified, thereby introducing a hydrophobic layer on the surface of the substrate.

[0169] In principle, there is no particular restriction on the method of hydrophobic modification. In some specific embodiments, the hydrophobic modification methods that can be listed include self-assembly of silane molecules, air plasma treatment of hydrophobic molecule precursors such as hexamethyldisiloxane (HMDSO), coating of fluorine-containing polymer materials (such as PyFlon series perfluoropolymer resin materials, Cytop fluorocarbon polymer materials) (such as spin coating, dip-pull, rod coating, scraper coating), etc.

[0170] Regarding the silane molecular self-assembly of the present invention, in some specific embodiments of the present invention, silane molecules are self-assembled in at least part or all of the activated treatment area to form a silane molecular self-assembled monolayer film to achieve hydrophobic modification of the substrate surface.

[0171] In some specific embodiments of the present invention, the silane molecules include trimethoxy (1H, 1H, 2H, 2H-nonafluorohexyl) silane, trimethoxy (1H, 1H, 2H, 2H-tridecafluorooctyl) silane, octadecyl trimethoxy silane, hexadecyl trimethoxy silane, dodecyl trimethoxy silane, triethoxy (1H, 1H, 2H, 2H-nonafluorohexyl) silane, triethoxy-1H, 1H, 2H, 2H-tridecafluorooctyl silane, octadecyl triethoxy silane, hexadecyl triethoxy silane, butyl triethoxy silane, 3-aminopropyl triethoxy silane, 3-aminopropyl trimethoxy silane, tetraethyl silicate and the like.

[0172] In some preferred embodiments, the silane molecules can be used in the form of a silane molecule solution, wherein the silane molecule solution includes silane molecules, a solvent, and optional additives. The present invention does not specifically limit the solvent, as long as it can dissolve the silane molecules, for example, one or more combinations of water, ethanol, toluene, acetone, etc. can be listed. In addition, in order to further improve the solubility of the silane molecules, additives can also be added, such as one or more combinations of acetic acid, hydrochloric acid, ammonia water, etc.

[0173] Regarding the dosage of silane molecules, based on the volume of the solution containing the silane molecules as 100 volume %, the volume fraction of the silane molecules is 0.05-20 volume %, for example, 0.1 volume %, 1 volume %, 5 volume %, 10 volume %, 15 volume %, etc.

[0174] As for the self-assembly method, the self-assembly of silane molecules can be performed by a liquid phase method or a gas phase method commonly used in the art. In some specific embodiments, the liquid phase method is a solution immersion method, and the gas phase method is a gas phase heat treatment method.

[0175] In some specific embodiments, the solution immersion method is to immerse the activated substrate in silane molecules or their solution, and then dry the immersed substrate. In some preferred embodiments, the immersion time is 10 minutes to 24 hours; the drying temperature is 50 to 250°C, and the drying time is 1 to 30 minutes.

[0176] In some specific embodiments, the vapor phase heat treatment method is to place the activated substrate in a vessel, drip silane molecules or their solutions around the substrate, cover and heat. In some preferred embodiments, based on the diameter of the substrate being 100 mm, the amount of the silane molecules or their solutions is 1 to 150 μL, preferably 10 to 100 μL, more preferably 15 to 30 μL; the temperature of the heat treatment is 50 to 250°C; and the time of the heat treatment is 1 to 30 min.

[0177] The present invention does not specifically limit the selection of the vessel, and vessels commonly used in the art, such as glass culture dishes, vacuum glass boxes, etc., can be used.

[0178] Furthermore, the number of operations of the hydrophobic modification of the present invention is not particularly limited as long as the hydrophobicity of the substrate surface can satisfy one or more of the following conditions: 1) the static contact angle of the ink is greater than 60°, 2) the rolling angle of the ink is less than 35°, and 3) the hysteresis of the ink contact angle is less than 20°. If the hydrophobicity of the substrate surface itself satisfies the above conditions, the activation treatment step and the hydrophobic modification step can be omitted, and the following patterned hydrophilic treatment step can be directly performed.

[0179] (3) Patterned hydrophilic treatment steps

[0180] In the step of patterned hydrophilic treatment of the present invention, a mask and a hydrophilic treatment method are used to perform patterned hydrophilic treatment on the hydrophobically modified substrate to achieve patterned partitioning to prepare for the formation of subsequent patterns.

[0181] In principle, there is no particular limitation on the hydrophilic treatment method, and conventional hydrophilic treatment methods in the art can be used. In some specific embodiments, the treatment methods that can be listed include one or more of plasma treatment, ultraviolet light treatment, ultraviolet ozone treatment, Piranha solution immersion, etc.

[0182] Further, the patterned partitioning methods that can be listed are as follows:

[0183] By using a metal mask and plasma treatment in the hydrophilic treatment method (for example, oxygen plasma treatment, air plasma treatment, nitrogen plasma treatment, etc.), the substrate surface not covered by the mask is hydrophilized, while the substrate surface covered by the mask still retains hydrophobicity, thereby achieving patterned partitioning.

[0184] By using a photolithography mask and ultraviolet light treatment in the hydrophilic treatment method (eg, deep ultraviolet exposure, ultraviolet exposure, etc.), the substrate surface not covered by the mask is hydrophilized, while the substrate surface covered by the mask still retains hydrophobicity, thereby achieving patterned partitioning.

[0185] In some specific embodiments, a mask (the mask is a dark version, i.e., the functional pattern area is transparent) and a UV treatment (e.g., deep UV exposure) in a hydrophilic treatment method is used to treat the surface of the substrate material. Further, the mask is removed, and the opaque part is a hydrophobic area, and the transparent part (i.e., the functional pattern area) is a hydrophilic area, thereby achieving patterned partition control, thereby preparing a hydrophilic and hydrophobic template (see the preparation process). Figure 8 ).

[0186] In some specific embodiments, the wavelength of the deep ultraviolet exposure is below 200 nm, preferably 100-200 nm, etc. A typical example is 172 nm, the treatment time is 1-900 s, and the energy density is >10 mW / cm 2 , the deep ultraviolet exposure treatment is carried out under an inert gas.

[0187] In some specific embodiments, the inert gas is nitrogen or argon; the flow rate of the inert gas is 10 to 30 L / min.

[0188] (4) Ink coating steps

[0189] In the step of applying the ink of the present invention, the surface of the hydrophilic region of the hydrophilic-hydrophobic template is made to absorb the ink to deposit a wet film.

[0190] In the present invention, a wet liquid film (wet film) is formed on the surface of the substrate after the patterned partitions by using a solution raw material (hereinafter also referred to as ink) mainly through a solution adsorption method.

[0191] For the solution adsorption method, the solution raw material is mainly brought into contact with the substrate surface, and then relative movement is generated between the two so that the solution is adsorbed on the hydrophilic area that matches its properties.

[0192] After the above-mentioned patterned partitioning, the substrate can be in contact with the solution raw material, and further relative movement is generated between the two, so that the surface of the target patterned area adsorbs the solution raw material to form a wet liquid film (wet film). In some preferred embodiments of the present invention, the hydrophilic area of ​​the substrate retains the liquid film through the above-mentioned treatment, while the hydrophobic area does not substantially have a liquid film.

[0193] The present invention uses a solution raw material and forms a desired pattern according to the pattern forming method described below. The solution raw material that can be used in the present invention includes a solvent and a functional component. It should be noted that the present invention uses a "solution raw material", which can be a substantially homogeneous system or a dispersed system with a substantially uniform composition and a suspended substance.

[0194] Further, the solvent that can be used for the solution raw material of the present invention can generally be an aqueous solvent, typically including water, alcohols (such as ethanol, isopropanol, etc.) or polyol ethers (such as ethylene glycol methyl ether, etc.) solvents that can be miscible with water. Preferably, the solvent can be ethylene glycol methyl ether.

[0195] In principle, there is no particular restriction on the functional components in the solution raw material of the present invention. In some specific embodiments, it can be a conductive material, a semiconductor material, an (inorganic / metal) salt compound, a (conductive or insulating) polymer, an organic compound, or their precursors. In some preferred embodiments, the functional components can be various conductive materials, semiconductor materials or insulating materials. Typically, it can be various inorganic carbon-based semiconductor materials, organic semiconductor materials, metals, metal oxides, metal sulfides or their precursors. In addition, in principle, there is no particular restriction on the existence form of the various functional components mentioned above, and it can exist in the form of colloidal nanoparticles (or nanotubes, nanowires) suspensions, sol-gel solutions, salt solutions, polymer solutions, organic small molecule solutions, etc.

[0196] The solution raw material of the present invention, in addition to the above-mentioned solvent and functional components, optionally, according to actual needs, may also include one or more components such as a bonding component, a dispersing aid, and an antioxidant.

[0197] The temperature and humidity of the ink coating module are controllable, the temperature can be controlled within a range of -20°C to 100°C, and the humidity can be controlled within a range of 5%RH to 95%RH.

[0198] Furthermore, the manner in which the substrate contacts and moves relative to the solution raw material includes but is not limited to:

[0199] Dropping the solution raw material onto the surface of the patterned substrate, and spin coating at a speed of 1000 r / min to 8500 r / min to obtain a hydrophilic region adsorption liquid film;

[0200] Dropping the solution raw material on the surface of the patterned substrate, and scraping it with a scraper or wire rod at a speed of 100 μm / s to 1,000,000 μm / s to obtain a hydrophilic region adsorption liquid film;

[0201] The solution raw material is injected into the slit coater, and the coating head or substrate is moved at a speed of 100 μm / s to 1,000,000 μm / s to obtain a hydrophilic region adsorption liquid film by the slit coating method;

[0202] The patterned substrate is immersed in the solution raw material for no more than 3 minutes, and then the substrate is vertically pulled out at a speed of 100 μm / s to 1,000,000 μm / s to obtain a hydrophilic region adsorption liquid film by a pull-up coating method.

[0203] (5) Post-processing steps

[0204] In the post-treatment step of the present invention, the wet film is post-treated to form a dry film.

[0205] The post-processing steps include a drying step and / or a photon sintering step.

[0206] The drying step is mainly to provide a temperature so that the solvent in the wet film can evaporate quickly. The drying conditions include: a drying temperature of 25 to 150° C., a drying time of 1 to 15 minutes, and a drying method including one or more of electric hot plate drying, air knife drying, near-infrared drying, deep ultraviolet drying, and placement drying.

[0207] The photon sintering step is mainly to provide energy to enable the functional components in the wet film to be quickly solidified. The conditions of the photon sintering include: the photon sintering light lamp is a xenon lamp, the distance between the lamp window and the substrate is 1 to 500 mm, the output voltage is 100 to 4000 V, the pulse width is 100 to 15000 μs, the flash interval is 100 to 40000 ms, and the number of flashes is 1 to 600 times.

[0208] In addition, the post-processing method needs to match the ink used in the ink coating step, for example:

[0209] When carbon nanotube suspension, C8-BTBT solution, etc. are used as ink, only drying treatment is required to evaporate the solvent in the ink, and no photon sintering treatment is required. During operation, the photon sintering component in the post-processing module can be disabled or only the heat treatment component can be enabled for drying. The post-processing method can be placement drying, air knife drying, etc.

[0210] When the metal oxide precursor solution is used as ink, a drying process is required to evaporate the solvent and a large amount of energy is required for photon sintering. The post-processing module works normally during operation. The post-processing method can be electric hot plate drying and high energy parameters (e.g. 6 J / cm 2 )'s photon sintering treatment combined with.

[0211] When silver nanoparticle suspension is used as ink, drying is required to evaporate the solvent and a certain amount of energy is required for photon sintering. The post-processing module works normally during operation. The post-processing method can be electric hot plate drying and low energy parameters (e.g. 1.84 J / cm 2 )'s photon sintering combined with the previous one.

[0212] Furthermore, if a multi-layer functional thin film structure is to be constructed on the substrate, the mask shape in the patterned hydrophilic treatment step, the ink in the ink coating step and the post-treatment method adapted to the ink are changed, and the above steps (1) to (5) or steps (3) to (5) are repeated to obtain a multi-layer functional thin film structure, thereby forming an electronic device with a complete structure (see the overall process flow). Fig. 9 ).

[0213] (Electronic Devices)

[0214] Furthermore, the present invention also provides an electronic device prepared by the above apparatus and method, wherein the electronic device comprises a silicon-based inorganic material substrate or a polymer material substrate, and a pattern formed on the substrate using the above method.

[0215] In principle, there is no particular limitation on the type of electronic device of the present invention. For example, the electronic device may be a resistor, a capacitor, an inductor, a diode, a triode, etc. In some preferred embodiments of the present invention, the electronic device is a thin film transistor or a conductive serpentine silver wire.

[0216] Example

[0217] The embodiments of the present invention will be described in detail below in conjunction with the examples, but those skilled in the art will appreciate that the following examples are only used to illustrate the present invention and should not be considered to limit the scope of the present invention. If no specific conditions are specified in the examples, they are carried out according to normal conditions or the conditions recommended by the manufacturer. If the manufacturer is not specified for the reagents or instruments used, they are all conventional products that can be obtained commercially.

[0218] Example 1

[0219] The thin film transistor on the PI flexible substrate of the present invention is prepared by the following method: Fig. 9 As shown, the following steps are included:

[0220] (1) Indium nitrate hydrate, aluminum nitrate nonahydrate, indium nitrate hydrate and tin chloride pentahydrate are dissolved in ethylene glycol methyl ether respectively, and stirred at 40° C. for several hours to obtain clear and transparent solutions, namely, indium oxide precursor solution, aluminum oxide precursor solution and indium tin oxide precursor solution respectively.

[0221] (2) In the hydrophilic-hydrophobic template manufacturing module, the pre-treated flexible PI substrate was treated with oxygen (100 sccm, 100 W) plasma for 2 min, and then the flexible PI substrate was hydrophobically modified in a culture dish using 20 μL trimethoxy (1H, 1H, 2H, 2H-tridecafluorooctyl) silane by a gas phase method. The treatment time was 10 min and the treatment temperature was 150 ° C to obtain a hydrophobically modified flexible PI substrate (hydrophobic effect see Fig.10 and Fig.11 ),Depend on Fig.10 and Fig.11 It can be seen that the ink rolling angle is 13.5°, the ink contact angle hysteresis is 8.5°, and the ink static contact angle is 66.2°. Then, the hydrophobic substrate is patterned and hydrophilic by using a photolithography mask and deep ultraviolet exposure. The nitrogen flow rate during the treatment is 15L / min and the exposure time is 5min, thereby forming a hydrophilic and hydrophobic template.

[0222] (3) In the ink coating module, the temperature of the zone was set to 25°C and the humidity was set to 10% RH. The indium oxide precursor solution was used as the ink. The coating method was dip-pull and the pull rate was 5000 μm / s (see the coating effect). Fig.12 ).

[0223] (4) In the post-processing module, firstly, heat treatment and drying at 150°C for 5 min were performed, and then photon sintering treatment was performed. The distance between the lamp window and the substrate was set to 10 mm, the output voltage was set to 1100 V, the pulse width was set to 10000 μs, the flash interval was set to 3000 ms, and the number of flashes was set to 70 times (see the post-processing effect). Fig.13 ).

[0224] (5) Prepare the second layer of pattern. The substrate is transported to the hydrophilic-hydrophobic template manufacturing module again, and the flexible PI substrate is treated with oxygen (100 sccm, 100 W) plasma for 2 min. Then, the flexible PI substrate is hydrophobically modified in a culture dish using 20 μL trimethoxy (1H, 1H, 2H, 2H-tridecafluorooctyl) silane by a gas phase method. The treatment time is 10 min and the treatment temperature is 150 ° C. A hydrophobic-modified flexible PI substrate with a layer of pattern is obtained. Then, the hydrophobic substrate with a layer of pattern is subjected to patterned hydrophilic treatment by using a photolithography mask and deep ultraviolet exposure. The nitrogen flow rate during the treatment is 15 L / min and the exposure time is 5 min, thereby forming a hydrophilic-hydrophobic template.

[0225] (6) In the ink coating module, the temperature of the zone was set to 25° C. and the humidity was set to 10% RH. Ethylene glycol methyl ether solution of hydrated indium nitrate and hydrated tin chloride was used as the ink. The coating method was immersion and pulling, and the pulling rate was 5000 μm / s.

[0226] (7) In the post-processing module, firstly, heat treatment and drying at 150°C for 5 min are performed, and then photon sintering treatment is performed. The interval between the lamp window and the substrate is set to 10 mm, the output voltage is 1100 V, the pulse width is 10000 μs, the flash interval is 3000 ms, and the number of flashes is 70 times.

[0227] (8) Prepare the third layer pattern by repeating (5) to (7), replace the mask pattern in the hydrophilic / hydrophobic template manufacturing module, and replace the ink with ethylene glycol methyl ether solution of hydrated aluminum nitrate in the ink coating module to complete the deposition of aluminum oxide film.

[0228] (9) Prepare the fourth layer pattern by repeating (5) to (7), replace the mask pattern in the hydrophilic / hydrophobic template manufacturing module, and replace the ink in the ink coating module with an ethylene glycol methyl ether solution of hydrated indium nitrate and hydrated tin chloride to complete the deposition of the indium tin oxide film.

[0229] Overall device effects, such as Fig.14 shown.

[0230] Example 2

[0231] The thin film transistor on the silicon oxide rigid substrate of the present invention is prepared by the following method: Fig. 9 As shown, the following steps are included:

[0232] (1) Indium nitrate hydrate, aluminum nitrate nonahydrate, indium nitrate hydrate and tin chloride pentahydrate are dissolved in ethylene glycol methyl ether respectively, and stirred for several hours at 40° C. to obtain a clear transparent solution, namely, an indium oxide precursor solution, an aluminum oxide precursor solution and an indium tin oxide precursor solution respectively.

[0233] (2) In the hydrophilic-hydrophobic template manufacturing module, the silicon oxide substrate was treated with oxygen (100 sccm, 100 W) plasma for 3 min, and then the silicon oxide substrate was hydrophobically modified in a culture dish using 20 μL trimethoxy (1H, 1H, 2H, 2H-tridecafluorooctyl) silane by a gas phase method. The treatment time was 10 min and the treatment temperature was 150°C to obtain a hydrophobic-modified silicon oxide substrate. The hydrophobic substrate was then patterned and hydrophilicized by photolithography mask and deep ultraviolet exposure. The nitrogen flow rate during the treatment was 15 L / min and the exposure time was 5 min, thereby forming a hydrophilic-hydrophobic template.

[0234] (3) In the ink coating module, the temperature of the zone was set to 25° C. and the humidity was set to 10% RH. An indium oxide precursor solution was used as the ink. The coating method was immersion and pulling, and the pulling rate was 5000 μm / s.

[0235] (4) In the post-processing module, firstly, heat treatment and drying at 150° C. for 5 min are performed, and then photon sintering treatment is performed. The interval between the lamp window and the substrate is set to 10 mm, the output voltage is set to 1100 V, the pulse width is set to 10000 μs, the flash interval is set to 1000 ms, and the number of flashes is set to 50 times.

[0236] (5) Repeat (2) to (4), replace the mask pattern in the hydrophilic and hydrophobic template manufacturing module; replace the ink in the ink coating module with an ethylene glycol methyl ether solution of hydrated indium nitrate and hydrated tin chloride to complete the deposition of the indium tin oxide film.

[0237] (6) Repeat (2) to (4), replace the mask pattern in the hydrophilic / hydrophobic template manufacturing module; and replace the ink in the ink coating module with an ethylene glycol methyl ether solution of hydrated aluminum nitrate to complete the deposition of the aluminum oxide film.

[0238] (7) Repeat (2) to (4), replace the mask pattern in the hydrophilic and hydrophobic template manufacturing module; and replace the ink in the ink coating module with an ethylene glycol methyl ether solution of hydrated indium nitrate and hydrated tin chloride to complete the deposition of the indium tin oxide film.

[0239] Overall device effects, such as Fig.15 shown.

[0240] Example 3

[0241] The conductive serpentine silver wire on the PDMS flexible substrate of the present invention comprises the following steps:

[0242] (1) Prepare a silver nanoparticle suspension.

[0243] (2) In the hydrophilic-hydrophobic template manufacturing module, PDMS itself is a hydrophobic substrate, and the hydrophobic substrate is patterned and hydrophilicized by photolithography mask and deep ultraviolet exposure. During the treatment, the nitrogen flow rate is 15 L / min and the exposure time is 5 min, thereby forming a hydrophilic-hydrophobic template.

[0244] (3) In the ink coating module, the temperature of the zone was set to 25° C. and the humidity was set to 10% RH. A silver nanoparticle solution was used as the ink. The coating method was immersion and pulling, and the pulling rate was 5000 μm / s.

[0245] (4) In the post-processing module, firstly, heat treatment and drying at 150° C. for 5 min are performed, and then photon sintering treatment is performed. The interval between the lamp window and the substrate is set to 20 mm, the output voltage is 800 V, the pulse width is 1500 μs, and the number of flashes is 1.

[0246] The overall snake-shaped silver line effect, such as Fig.16 shown.

[0247] It should be noted that, although the technical solution of the present invention is introduced with specific examples, those skilled in the art will appreciate that the present invention should not be limited thereto.

[0248] The embodiments of the present invention have been described above, and the above description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The selection of terms used herein is intended to best explain the principles of the embodiments, practical applications, or technical improvements in the market, or to enable other persons of ordinary skill in the art to understand the embodiments disclosed herein.

Claims

1. A device for manufacturing an electronic device, characterized in that: In the direction of substrate movement, it includes a hydrophilic and hydrophobic template manufacturing module, an ink coating module and a post-processing module in sequence. in, The hydrophilic and hydrophobic template manufacturing module includes an activation treatment unit, a hydrophobic modification unit and a patterned hydrophilic treatment unit, and the patterned hydrophilic treatment unit includes a mask area and a hydrophilic treatment component, and the hydrophilic treatment component is configured to make the substrate surface not covered by the mask hydrophilic; The ink coating module is configured to allow the surface of the hydrophilic substrate that has been subjected to patterned hydrophilic treatment to absorb ink to form a wet film; The post-processing module includes a heat treatment component and a photonic sintering component.

2. The device according to claim 1, characterized in that In the hydrophilic and hydrophobic template manufacturing module, The activation treatment unit is configured to perform activation treatment on the substrate so as to generate chemical activity on the surface of the substrate.

3. The device according to claim 1 or 2, characterized in that: In the hydrophilic and hydrophobic template manufacturing module, The hydrophobic modification unit is configured to perform hydrophobic modification on the surface of the activated substrate so that the hydrophobicity of the substrate surface satisfies one or more of the following conditions: 1) The static contact angle of ink is greater than 60°, 2) The ink rolling angle is less than 35°, 3) The ink contact angle hysteresis is less than 20°.

4. The device according to any one of claims 1 to 3, characterized in that: In the hydrophilic and hydrophobic template manufacturing module, The patterned hydrophilic treatment unit includes a mask and the hydrophilic treatment component includes an ultraviolet light source component, and the ultraviolet light source component is configured to emit ultraviolet light with a wavelength below 200nm to irradiate the ultraviolet light to the substrate covered by the mask, so that patterned partitions are formed on the surface of the substrate; Optionally, the patterned hydrophilic treatment unit further includes a pattern alignment component.

5. The device according to any one of claims 1 to 4, characterized in that: The ink includes one or more of an inorganic carbon-based semiconductor component, an organic semiconductor component, a metal component, a metal salt component, a metal oxide component or a metal sulfide component.

6. The device according to claims 1-5, characterized in that In the post-processing module, The heat treatment component and the photonic sintering component are configured to provide temperature and energy to quickly remove the solvent in the wet film and solidify the wet film to form a patterned dry film.

7. A method for manufacturing an electronic device, characterized in that: The following steps are included in the direction of substrate movement: The step of patterned hydrophilic treatment is as follows: the substrate with a hydrophobic surface is covered with a mask and irradiated with ultraviolet light to obtain a hydrophilic and hydrophobic template with a hydrophilic area; Ink coating step: allowing the surface of the hydrophilic region of the hydrophilic / hydrophobic template to absorb ink to deposit a wet film; Post-treatment step: post-treating the wet film to form a dry film; Wherein, the substrate is selected from a silicon-based inorganic material substrate or a polymer material substrate; The ultraviolet light irradiation includes irradiating the substrate covered by the mask with ultraviolet light of a wavelength below 200 nm under an inert gas, so that the light-transmitting portion of the substrate surface forms a hydrophilic region and the light-impermeable portion forms a hydrophobic region; A wet film is deposited on the hydrophilic region of the hydrophilic-hydrophobic template by ink coating, while substantially no wet film exists on the hydrophobic region; Optionally, before the patterned hydrophilic treatment step, the method further includes activating the substrate and performing hydrophobic modification.

8. The method according to claim 7, characterized in that In the step of patterned hydrophilic treatment, the conditions of ultraviolet irradiation include: wavelength of 172nm, time of 1 to 900s, energy density of >10mW / cm 2 , the flow rate of inert gas is 10~30L / min.

9. The method according to claim 7 or 8, characterized in that: The post-processing step includes a drying step and / or a photon sintering step; in, The drying conditions include: temperature of 25 to 150°C and time of 1 to 15 minutes; The conditions of the photon sintering include: the distance between the lamp window and the substrate is 1-500mm, the output voltage is 100-4000V, the pulse width is 100-15000μs, the flash interval is 100-40000ms, and the flash times are 1-600 times.

10. The method according to any one of claims 7 to 9, characterized in that: Use the device according to any one of claims 1 to 6 to perform the method.

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