Alternating magnetic tunnel junction, dual tunnel junction, and magnetic device and electronic device including same

Abstract

The invention relates to an alternating magnetic tunnel junction and a dual tunnel junction, and a magnetic device and an electronic device including the same. According to an exemplary embodiment, an alternating magnetic tunnel junction may include: a reference magnetic layer formed of an antiferromagnetic material having alternating magnetism; a free magnetic layer formed of a ferromagnetic conductive material; and a barrier layer between the reference magnetic layer and the free magnetic layer and formed of a non-magnetic insulating material. According to the alternating magnetic tunnel junction, the anti-ferromagnetic material with alternating magnetism is adopted as the reference magnetic layer, an additional pinning layer is not needed to fix the magnetic moment of the reference magnetic layer, and when the magnetic moment of the free magnetic layer is overturned by an external magnetic field, the influence on the anti-ferromagnetic reference magnetic layer is very small, so that the alternating magnetic tunnel junction has the advantages of simple structure, strong anti-interference capability and the like. The alternating magnetic tunnel junction can be applied to magnetic devices such as a magnetic sensor, a magnetic memory, a temperature sensor and a magnetic logic device.

Description

Technical Field

[0001] The present invention generally relates to the field of spin electronics, and more particularly, to an alternating magnetic tunnel junction, an alternating magnetic double tunnel junction, a magnetic device including the alternating magnetic tunnel junction or the double tunnel junction, and an electronic device including such a magnetic device. Background Art

[0002] Magnetic sensors measure physical parameters such as current and position by sensing magnetic field strength, and are widely used in the automotive industry, computer technology, power electronics technology, automatic control and other fields. Magnetic sensors can be divided into magnetic sensors based on the Hall effect, magnetic sensors based on anisotropic magnetoresistance, sensors based on the giant magnetoresistance (GMR) effect, and sensors based on the tunneling magnetoresistance (TMR) effect. Among them, sensors based on the TMR effect have many advantages such as large sensing signal, high sensitivity, good temperature stability, low energy consumption, small size, easy integration, fast speed, good radiation resistance, etc., and are particularly suitable for the fields of national economy, national defense construction, medical and health care, etc. Summary of the invention

[0003] One aspect of the present application provides an alternating magnetic tunnel junction, comprising: a reference magnetic layer formed of an antiferromagnetic conductive material with alternating magnetism; a free magnetic layer formed of a ferromagnetic conductive material; and a barrier layer located between the reference magnetic layer and the free magnetic layer and formed of a non-magnetic insulating material.

[0004] In an exemplary embodiment, the antiferromagnetic conductive material having alternating magnetism includes one or more of RuO2, KRu4O8, MnSi3, (Cr,Fe)Sb2, CaCrO3, and CrSb.

[0005] In an exemplary embodiment, the antiferromagnetic conductive material having alternating magnetism has a momentum-dependent spin band splitting property.

[0006] In an exemplary embodiment, the normal direction of the reference magnetic layer, that is, the current transmission direction of the alternating magnetic tunnel junction, is set to be parallel to or have an angle with the momentum space direction of the antiferromagnetic conductive material with alternating magnetism and the spin band splitting property, and the angle is less than 90 degrees, preferably less than 45 degrees, and more preferably less than 30 degrees.

[0007] In an exemplary embodiment, the magnetic space group of the antiferromagnetic conductive material with alternating magnetism breaks TPτ symmetry and Uτ symmetry, where T represents time reversal symmetry, P represents space inversion symmetry, U represents spinor symmetry, and τ represents translation of half a lattice.

[0008] In an exemplary embodiment, the reference magnetic layer and the free magnetic layer have perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

[0009] Another aspect of the present application provides an alternating magnetic double tunnel junction, comprising: a first reference magnetic layer; a first barrier layer formed on the first reference magnetic layer; a free magnetic layer formed on the first barrier layer; a second barrier layer formed on the free magnetic layer; and a second reference magnetic layer formed on the second barrier layer, wherein the first reference magnetic layer, the first barrier layer and the free magnetic layer form a first tunnel junction, the second reference magnetic layer, the second barrier layer and the free magnetic layer form a second tunnel junction, and each of the first tunnel junction and the second tunnel junction includes the above-mentioned alternating magnetic tunnel junction.

[0010] Another aspect of the present application provides a magnetic device, comprising the above-mentioned alternating magnetic tunnel junction or the above-mentioned alternating magnetic double tunnel junction.

[0011] In an exemplary embodiment, the magnetic device includes a magnetic sensor, a magnetic memory, or a magnetic logic device.

[0012] Yet another aspect of the present application provides an electronic device, which includes the magnetic device mentioned above.

[0013] In the alternating magnetic tunnel junction and the alternating magnetic double tunnel junction according to the exemplary embodiments of the present application, because an antiferromagnetic material with alternating magnetism is used as the reference magnetic layer, no additional pinning layer is required to fix the magnetic moment of the reference magnetic layer, and when the external magnetic field flips the magnetic moment of the free magnetic layer, the impact on the antiferromagnetic reference magnetic layer is very small. Therefore, it has the advantages of simple structure and strong anti-interference ability.

[0014] The above and other features and advantages of the present invention will become apparent from the following description of exemplary embodiments with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 The diagram is a schematic diagram of a multi-layer structure of a magnetic tunnel junction in the prior art.

[0016] Figure 2 Schematic diagram of a multilayer structure of an alternating magnetic tunnel junction according to an exemplary embodiment of the present invention.

[0017] Figure 3A This is a schematic diagram of the crystal structure of RuO2, an antiferromagnetic conductive material with alternating magnetism.

[0018] Figure 3B It is the energy band diagram of RuO2.

[0019] Figure 3C This is a schematic diagram of the Fermi surface of RuO2.

[0020] Figure 3D Schematic diagram of the transport properties along the

[110] direction of RuO2.

[0021] Figure 4 It is a schematic diagram of the transport resistance of a tunnel junction formed by a traditional antiferromagnetic conductive material and the antiferromagnetic conductive material with alternating magnetism of the present invention under different magnetization arrangements.

[0022] Figure 5A , 5B and 5C are schematic diagrams of some examples of magnetic anisotropy directions of the reference magnetic layer and the free magnetic layer.

[0023] Figure 6 Schematic diagram of a multilayer structure of an alternating magnetic double tunnel junction according to an exemplary embodiment of the present invention.

[0024] Figure 7 Yes Figure 2 Schematic diagram of the magnetic moment setup when the alternating magnetic tunnel junction is used as a temperature sensor. DETAILED DESCRIPTION

[0025] Exemplary embodiments of the present invention will be described below with reference to the accompanying drawings. Note that the accompanying drawings may not be drawn to scale.

[0026] The core structure of the magnetic sensor based on the TMR effect is the magnetic tunnel junction (MTJ). Figure 1 FIG. 1 is a schematic diagram showing a multilayer structure of a magnetic tunnel junction 10 in the prior art. Figure 1 As shown, the magnetic tunnel junction 10 includes a sandwich structure formed by a reference magnetic layer 12, a tunnel barrier layer 13 and a free magnetic layer 14, wherein the reference magnetic layer 12 and the free magnetic layer 14 are generally formed of ferromagnetic metal materials, and the barrier layer 13 is generally formed of a metal oxide material. Common material systems may include, for example, CoFeB / MgO or Al2O3 / CoFeB structures. The magnetic tunnel junction 10 also includes an antiferromagnetic pinning layer 11, which may be formed of an antiferromagnetic material such as IrMn and is disposed on one side of the reference magnetic layer 12 to pin / fix the magnetic moment of the reference magnetic layer 12. Figure 1 The hollow arrow in the figure shows that the magnetic moment direction of the reference magnetic layer 12 is rightward, but it can also be fixed in, for example, leftward or other directions. The magnetic moment of the free magnetic layer 14 can rotate or flip freely in response to an external magnetic field, for example Figure 1The hollow arrows in the figure show that it can rotate freely between horizontal right and horizontal left, so that the magnetic moments of the reference magnetic layer 12 and the free magnetic layer 14 can change between parallel and antiparallel states, which correspond to low resistance and high resistance states, respectively, i.e., TMR effect. By applying a current I flowing vertically through the magnetic tunnel junction 10 to read the resistance state of the magnetic tunnel junction 10, the magnetization direction of the free magnetic layer 14 can be determined, thereby determining information such as the direction and strength of the external magnetic field.

[0027] As mentioned above, it is necessary to grow a pinning layer 11 on a substrate (not shown) to fix the magnetic moment of the reference magnetic layer 12 so that it does not rotate freely with the external magnetic field, which increases the complexity and manufacturing cost of the device. In addition, some tunnel junction structure designs that do not include an antiferromagnetic pinning layer are proposed in the prior art, such as forming the reference magnetic layer 12 into an artificial antiferromagnetic structure, or using a hard magnetic material with a large coercive force to form the reference magnetic layer 12. However, the artificial antiferromagnetic structure also includes a complex multilayer structure, and has high requirements for the thickness control of the intermediate coupling layer, and the magnetic moment of the reference magnetic layer 12 of the artificial antiferromagnetic and hard magnetic materials may still be affected by the external magnetic field, resulting in degradation of sensor performance.

[0028] An exemplary embodiment of the present invention proposes to use a specific antiferromagnetic material, that is, an antiferromagnetic material with altermagnetism, to form a reference magnetic layer in a magnetic tunnel junction. This alternating magnetic antiferromagnetic material has the property of spin band splitting, so it can spin polarize the current flowing through it, so that it can cooperate with the free magnetic layer to produce the TMR effect. Such a magnetic tunnel junction is also called an alternating magnetic tunnel junction (ATMTJ). On the other hand, since the antiferromagnetic material has a very strong exchange interaction, its Néel vector is difficult to be changed by an external magnetic field, so there is no need to use an additional pinning layer to fix the magnetic moment of the reference magnetic layer formed by the antiferromagnetic material. In other words, this alternating magnetic tunnel junction has a better ability to resist external magnetic field interference. The alternating magnetic tunnel junction of the present invention has the advantages of simple structure and strong ability to resist external magnetic field interference, and can replace the existing magnetic tunnel junction and be applied to various magnetic devices.

[0029] Figure 2 FIG. 1 is a schematic diagram of a multilayer structure of an alternating magnetic tunnel junction 100 according to an exemplary embodiment of the present invention. Figure 2 As shown, the alternating magnetic tunnel junction 100 includes a reference magnetic layer 110, a free magnetic layer 130, and a barrier layer 120 located between the reference magnetic layer 110 and the free magnetic layer 130. Figure 2It is shown that the reference magnetic layer 110 is located below the free magnetic layer 130. For example, the reference magnetic layer 110 can be first formed on a substrate (not shown), and then the barrier layer 120 and the free magnetic layer 130 are formed in sequence. However, in other embodiments, the free magnetic layer 130 can be first formed on the substrate, and then the barrier layer 120 and the reference magnetic layer 110 are formed in sequence.

[0030] The barrier layer 120 and the free magnetic layer 130 may adopt materials and structures commonly used in magnetic tunnel junctions of the prior art. For example, the barrier layer 120 may adopt non-magnetic metal oxides such as MgO, Al2O3, TiO2, HfO2, and the free magnetic layer 130 may adopt ferromagnetic metals such as Fe, Co, Ni, or their alloys such as CoFe, NiFe, CoFeB, etc. In addition, the free magnetic layer 130 may also adopt ferromagnetic conductive materials such as CrO2. It should be understood that the barrier layer 120 and the free magnetic layer 130 may also adopt materials and structures developed in the future, and the present invention does not impose any specific restrictions thereon.

[0031] Different from the reference magnetic layer formed of ferromagnetic materials in the prior art, the reference magnetic layer 110 of the present invention is formed of an antiferromagnetic material with alternating magnetism, examples of which include but are not limited to one or more of RuO2, KRu4O8, MnSi3, (Cr,Fe)Sb2, CaCrO3, and CrSb. Alternating magnetism means that the antiferromagnetic material has a momentum-dependent spin band splitting property, that is, the number of electrons with spin-up and spin-down may be equal to each other in the entire momentum space, but in certain specific momentum space directions, the number of electrons with spin-up and spin-down is not equal to each other, resulting in a spin-polarized current, which can cooperate with the free magnetic layer to produce a TMR effect. The inventors have found that the antiferromagnetic material whose magnetic space group satisfies both the destruction of TPτ symmetry and Uτ symmetry has alternating magnetism, where T represents time reversal symmetry, P represents space inversion symmetry, U represents spinor symmetry, and τ represents translation of half a lattice. The characteristic of this type of antiferromagnetic material is that the energy band will undergo spin splitting on some high symmetry lines, and the Fermi surface shapes of the spin-up and spin-down are consistent, but they differ from each other by a mirror operation. Therefore, the spin-up and spin-down conductive channels of this type of material will be different from each other on some low symmetry planes, and when the current is conducted in the direction perpendicular to these low symmetry planes (i.e., a specific momentum space direction), the current will be spin polarized.

[0032] Taking RuO2 as an example, the properties of this antiferromagnetic material with alternating magnetism are explained below. Figure 3A shows the crystal structure of RuO2, Figure 3B Its energy band diagram is shown, Figure 3C The Fermi surface shape of RuO2 is shown. Figure 3DThe transport properties along the

[110] direction of RuO2 are shown. Figure 3A As shown in the left figure, RuO2 has a rutile structure, belongs to the tetragonal system, and has a space group of P42 / mnm. The arrow on the Ru atom schematically shows its magnetic moment. It can be seen that RuO2 is a collinear antiferromagnetic material, and the two sub-lattices of its internal magnetic structure are arranged in antiparallel, and the magnetic moments of each sub-lattice are equal in magnitude and opposite in direction, so the macroscopic magnetism is zero. However, it should be understood that the present invention is not limited to this, and the reference magnetic layer 110 can also use a non-collinear antiferromagnetic material with alternating magnetism. Figure 3A The right figure also schematically shows the k space (ie, momentum space) in the lattice.

[0033] like Figure 3B As shown in the energy band diagram, the spin-up and spin-down energy bands are split in the Γ-M and ZA directions of the momentum space. Figure 3C As shown in Figure 2, the spin-up and spin-down Fermi surfaces have the same shape and can be transformed into each other through mirror operations. Figure 3C In the figure, the dotted line indicates the

[110] direction. Figure 3D When the current flows along the

[110] direction of RuO2, the distribution of the number of conduction wave functions of electrons with different spins in momentum space is given by Figure 3D The conductive channel shown in FIG. 1 is determined by the conductive channel shown in FIG. 1 . Since the conductive channels for spin-up and spin-down are completely different, the transport properties of RuO2 at this time behave like ferromagnetic materials and can generate spin-polarized current, thereby forming a tunnel junction with another ferromagnetic metal layer (i.e., the free magnetic layer 130) to produce the TMR effect. It should be noted that if electrons are transported along a direction of RuO2 where spin splitting does not occur, such as the

[001] direction, the current will not be polarized, and therefore the TMR effect cannot be generated with another ferromagnetic metal layer, because when electrons are transported along the

[001] direction of RuO2, the shapes of the conductive channels for spin-up and spin-down are consistent with each other.

[0034] Therefore, return to the reference Figure 2 Since the current I flows through each layer of the alternating magnetic tunnel junction 100 in the vertical direction, the normal direction of the reference magnetic layer 110, i.e., the vertical direction, is set to be parallel to or have an angle with the momentum space direction of the antiferromagnetic material having the spin band splitting property forming the reference magnetic layer 110, and the angle is less than 90 degrees, preferably less than 45 degrees, or more preferably less than 30 degrees. In other words, there is at least one current component in the momentum space direction of the spin band splitting, so that a spin polarized current can be generated according to the principle described above, so that the alternating magnetic tunnel junction 100 can exhibit the TMR effect.

[0035] Figure 4Schematic diagram of the transport resistance of the tunnel junction formed by the traditional antiferromagnetic conductive material and the antiferromagnetic conductive material with alternating magnetism of the present invention under different magnetization arrangements. Figure 4 To further explain why the alternating magnetic tunnel junction composed of antiferromagnetic materials with alternating magnetism can produce the TMR effect. Figure 4 As shown in the left figure, for traditional antiferromagnetic materials, the energy bands of the two spins are degenerate, making the conduction channels of spin-up and spin-down completely consistent. Therefore, when it forms a tunnel junction with another ferromagnetic metal layer, the magnetic moment of the ferromagnetic metal is changed to be parallel or antiparallel to the Née vector of the antiferromagnetic material, and the resistance generated is the same, that is, R1 = R2, so the TMR effect is 0. Figure 4 As shown in the right figure, when an antiferromagnetic material with alternating magnetism is used to form a reference magnetic layer, and when the current is transported along some special low-symmetry directions of the antiferromagnetic material, a spin-polarized current is generated. When the magnetic moment of the free magnetic layer is changed to be parallel or antiparallel to the Née vector of the antiferromagnetic material, different resistances are generated due to the different scattering effects on different spin-polarized currents at the interface. For example, when the magnetic moment of the free magnetic layer is parallel to the Née vector of the antiferromagnetic material, more polarized currents can easily flow into the free magnetic layer through the potential barrier, and the resistance R1 is small. When the magnetic moment of the free magnetic layer is antiparallel to the Née vector of the antiferromagnetic material, more polarized currents are scattered by the interface, while less polarized currents can easily flow into the free magnetic layer through the potential barrier, and the resistance R2 is large. Since R1≠R2, TMR is greater than 0.

[0036] In a preferred embodiment, when the reference magnetic layer 110 includes RuO2, the barrier layer 120 can be formed of, for example, TiO2, because both RuO2 and TiO2 have a rutile crystal structure and have relatively close lattice constants, so they can form a high-quality interface, which helps to improve the TMR value of the tunnel junction. Although the Née vector of the antiferromagnetic reference magnetic layer 110 and the magnetic moment of the free magnetic layer 130 are shown in the drawings as being in the in-plane direction, that is, having in-plane magnetic anisotropy, in some embodiments, they can also be formed in the out-of-plane direction, that is, in the vertical direction, that is, having perpendicular magnetic anisotropy. Other aspects of the alternating magnetic tunnel junction 100 can be the same or similar to the magnetic tunnel junction of the prior art, and will not be repeated here.

[0037] It is understood that, depending on the specific application, the magnetic anisotropy of the reference magnetic layer 110 and the free magnetic layer 130 can be flexibly set. For example, for magnetic memory applications, the magnetic anisotropy directions of the reference magnetic layer 110 and the free magnetic layer 130 can be parallel to each other, for example, parallel to each other in the in-plane direction (e.g., Figure 2 For magnetic sensor applications, the magnetic anisotropy direction of the free magnetic layer 130 can be set to be perpendicular to the magnetic anisotropy direction of the reference magnetic layer 110. Figures 5A-5C Some embodiments are shown where the magnetic anisotropy directions of the reference magnetic layer 110 and the free magnetic layer 130 are perpendicular to each other. Figure 5A 1 is a top view, in which the dotted double-headed arrow 110m indicates the direction of the Née vector of the antiferromagnetic reference magnetic layer 110, that is, the direction of the magnetic anisotropy of the reference magnetic layer 110, and the solid arrow 130m indicates the initial magnetization direction of the free magnetic layer 130 when there is no external magnetic field, that is, the direction of the magnetic anisotropy of the free magnetic layer 130. The magnetic anisotropy direction of the reference magnetic layer 110 and the magnetic anisotropy direction of the free magnetic layer 130 are both in-plane and perpendicular to each other. The magnetic moment 130m of the free magnetic layer 130 can rotate in-plane in response to the external magnetic field, thereby forming an antiparallel state or a parallel state with the magnetic moment 110m of the reference magnetic layer 110. Figure 5B 1 is a side view showing that the reference magnetic layer 110 has an in-plane magnetic anisotropy and the free magnetic layer 130 has a perpendicular magnetic anisotropy. In response to an external magnetic field, the magnetic moment 130m of the free magnetic layer 130 can rotate to a direction parallel or antiparallel to the magnetic moment 110m of the reference magnetic layer 110. Figure 5C 1 is a side view showing that the reference magnetic layer 110 has perpendicular magnetic anisotropy and the free magnetic layer 130 has in-plane magnetic anisotropy. In response to an external magnetic field, the magnetic moment 130m of the free magnetic layer 130 can rotate to a direction parallel or antiparallel to the magnetic moment 110m of the reference magnetic layer 110.

[0038] Figure 6 FIG. 2 is a schematic diagram of a multilayer structure of an alternating magnetic double tunnel junction 200 according to an exemplary embodiment of the present invention. The alternating magnetic double tunnel junction 200 is similar to the double tunnel junction of the prior art, except that the reference magnetic layer is formed of an antiferromagnetic material having alternating magnetism. Figure 6 The alternating magnetic double tunnel junction 200 includes a first reference magnetic layer 210, a first barrier layer 220, a free magnetic layer 230, a second barrier layer 240, and a second reference magnetic layer 250 sequentially formed on a substrate (not shown), wherein the first reference magnetic layer 210 and the second reference magnetic layer 250 are each formed of an antiferromagnetic conductive material having alternating magnetism. The first reference magnetic layer 210, the first barrier layer 220, and the free magnetic layer 230 constitute a first magnetic tunnel junction, and the free magnetic layer 230, the second barrier layer 240, and the second reference magnetic layer 250 constitute a second magnetic tunnel junction, and therefore is called a double tunnel junction. The direction of the Née vector of the first reference magnetic layer 210 and the direction of the Née vector of the second reference magnetic layer 250 are set to be parallel to each other. The above description of Figure 2-4 Various aspects of the described alternating magnetic tunnel junction 100 can be applied to the first magnetic tunnel junction and the second magnetic tunnel junction in the alternating magnetic double tunnel junction 200 , and thus will not be described again here.

[0039] It can also be understood that the alternating magnetic tunnel junction 100 and the alternating magnetic double tunnel junction 200 of the present invention can replace the magnetic tunnel junction or double tunnel junction of the prior art and be applied in various magnetic devices. Examples of such magnetic devices include but are not limited to magnetic sensors, magnetic memories, temperature sensors, and magnetic logic devices. Figure 7 Yes Figure 2 The schematic diagram of the magnetic moment setting when the alternating magnetic tunnel junction 100 is used as a temperature sensor. Figure 7 As shown, the dashed ellipse represents the majority spin-polarized (e.g., spin-up) electrons generated in the antiferromagnetic reference magnetic layer 110, and the dotted circle represents the minority spin-polarized (e.g., spin-down) electrons generated in the antiferromagnetic reference magnetic layer 110. The magnetic moment of the free magnetic layer 130 can be set so that the majority spin-polarized electrons are more easily scattered, while the minority spin-polarized electrons are more easily passed through the free magnetic layer 130, that is, the alternating magnetic tunnel junction 100 is in an antiparallel state. Experiments show that when the alternating magnetic tunnel junction 100 is in an antiparallel state, within an operating temperature range lower than the Neel temperature of the antiferromagnetic material forming the reference magnetic layer 110, the resistance of the alternating magnetic tunnel junction 100 changes linearly with temperature, so the temperature can be determined by measuring the resistance of the alternating magnetic tunnel junction 100 in the antiparallel state. Based on this principle, the alternating magnetic tunnel junction 100, as well as the alternating magnetic double tunnel junction 200, can be used as a temperature sensor. As described above, the magnetic anisotropy and magnetic moment direction of the reference magnetic layer 110 and the free magnetic layer 130 can be flexibly set according to specific applications. Embodiments of the present invention also provide electronic devices including such magnetic devices, such as but not limited to smart phones, tablet computers, notebook computers, wearable electronic devices, etc.

[0040] Unless the context clearly requires otherwise, throughout the specification and claims, the words "comprise", "comprising", "including", "comprising", etc. should be interpreted in an inclusive sense, rather than an exclusive or exhaustive sense. That is, the meaning is "including but not limited to". The word "connected" as generally used herein refers to two or more elements that can be directly connected or connected through one or more intermediate elements. As generally used herein, the word "connected" refers to two or more elements that can be directly connected or connected through one or more intermediate elements. In addition, when used in this application, the words "herein", "above", "below" and words of similar meanings should refer to the entirety of this application rather than to any particular part of this application. Where the context permits, the word "or" refers to a list of two or more items, which covers all of the following interpretations of the word: any item in the list, all items in the list, and any combination of items in the list.

[0041] Furthermore, unless otherwise specifically stated or understood in the context of use, conditional language used herein, such as "can," "may," "might," "could," "for example," "for example," "such as," and the like, is generally intended to convey that certain embodiments include, while other embodiments do not include, certain features, elements, and / or states. Thus, such conditional language is generally not intended to imply that one or more embodiments require features, elements, and / or states in any way, or that one or more embodiments must include logic for making decisions, with or without author input or prompting, that such features, elements, and / or states are included or will be performed in any particular embodiment.

[0042] Although certain embodiments have been described, these embodiments are presented only by way of example and are not intended to limit the scope of the present disclosure. In fact, the novel facilities, methods, and systems described herein may be embodied in various other forms; in addition, various omissions, substitutions, and changes may be made to the forms of the methods and systems described herein without departing from the spirit of the present disclosure. For example, although blocks are presented in a given arrangement, alternative embodiments may perform functions similar to different components and / or circuit topologies, and may delete, move, add, subdivide, combine, and / or modify some blocks. Each of these blocks may be implemented in a variety of different ways. Any suitable combination of the elements and actions of the various embodiments described above may be combined to provide further embodiments. The attached claims and their equivalents are intended to cover these forms or modifications that fall within the scope and spirit of the present disclosure.

[0043] The above description has been given for the purpose of illustration and description. In addition, this description is not intended to limit the embodiments of the present invention to the forms disclosed herein. Although a number of example aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, changes, additions and sub-combinations thereof.

Claims

1. An alternating magnetic tunnel junction, comprising: A reference magnetic layer, formed of an antiferromagnetic conductive material having alternating magnetism; a free magnetic layer formed of a ferromagnetic conductive material; as well as The barrier layer is located between the reference magnetic layer and the free magnetic layer and is formed of a non-magnetic insulating material.

2. The alternating magnetic tunnel junction according to claim 1, wherein: The antiferromagnetic conductive material with alternating magnetism includes one or more of RuO2, KRu4O8, MnSi3, (Cr,Fe)Sb2, CaCrO3, and CrSb.

3. The alternating magnetic tunnel junction according to claim 1, wherein: The antiferromagnetic conductive material with alternating magnetism has a momentum-dependent spin band splitting property.

4. The alternating magnetic tunnel junction according to claim 3, wherein: The normal direction of the reference magnetic layer, that is, the current transmission direction of the alternating magnetic tunnel junction, is set to be parallel to or have an angle with the momentum space direction of the antiferromagnetic conductive material with alternating magnetism and the spin band splitting property, and the angle is less than 90 degrees, preferably less than 45 degrees, and more preferably less than 30 degrees.

5. The alternating magnetic tunnel junction according to claim 1, wherein: The magnetic space group of the antiferromagnetic conductive material with alternating magnetism breaks TPτ symmetry and Uτ symmetry, wherein T represents time reversal symmetry, P represents space inversion symmetry, U represents spinor symmetry, and τ represents translation of half a lattice.

6. The alternating magnetic tunnel junction according to claim 1, wherein: The reference magnetic layer and the free magnetic layer have perpendicular magnetic anisotropy or in-plane magnetic anisotropy.

7. An alternating magnetic double tunnel junction, comprising: a first reference magnetic layer; a first barrier layer formed on the first reference magnetic layer; a free magnetic layer formed on the first barrier layer; a second barrier layer formed on the free magnetic layer; as well as a second reference magnetic layer formed on the second barrier layer, Wherein, the first reference magnetic layer, the first barrier layer and the free magnetic layer form a first tunnel junction, the second reference magnetic layer, the second barrier layer and the free magnetic layer form a second tunnel junction, and each of the first tunnel junction and the second tunnel junction comprises the alternating magnetic tunnel junction described in any one of claims 1 to 6. 8 . A magnetic device, comprising the alternating magnetic tunnel junction according to any one of claims 1 to 6 or the alternating magnetic double tunnel junction according to claim 7 .

9. The magnetic device according to claim 8, wherein: The magnetic device includes a magnetic sensor, a magnetic memory, a temperature sensor or a magnetic logic device.

10. An electronic device comprising the magnetic device according to claim 8 or 9.

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