Monocrystalline silicon water-guided laser processing system based on dual support

Abstract

The invention provides a monocrystalline silicon water-guided laser processing system based on dual support. The monocrystalline silicon water-guided laser processing system comprises a laser; a spectroscope; a focus lens; a water guide processing head; the monocrystalline silicon wafer is subjected to water-guided laser cutting processing through water jet; transparent glass which is attached to the monocrystalline silicon wafer from the bottom direction, is integrated with the monocrystalline silicon wafer, and supports the monocrystalline silicon wafer; the clamp comprises an upper clamp and a lower clamp which are respectively used for clamping from the upper surface of the monocrystalline silicon wafer and the lower surface of the transparent glass; and a buffer layer between the upper jig and the upper surface of the monocrystalline silicon wafer. According to the invention, the high-transmittance glass is used as a bottom support material, so that effective support is provided, laser in the processing process is dissipated, damage to monocrystalline silicon is prevented, edge breakage and cracks caused by water flow impact are reduced, and the quality of monocrystalline silicon water-guided laser processing is improved. Meanwhile, the elastic gasket is additionally arranged on the contact surface of the clamp and the monocrystalline silicon wafer for buffering and protection, so that the surface quality of a processed finished product is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of water-conducting laser processing, and in particular to a single-crystal silicon water-conducting laser processing system based on double supports. Background Art

[0002] As an important semiconductor material, single crystal silicon is widely used in electronics, photovoltaics, optics, MEMS and other fields. Its excellent electrical, optoelectronic and mechanical properties make it a core component. The processing of single crystal silicon usually adopts traditional methods such as mechanical processing, laser processing and electrical discharge machining, but these methods have certain limitations in efficiency, precision and material protection.

[0003] Water-guided laser processing combines the advantages of water jet and laser beam to effectively reduce the heat-affected zone, avoid thermal cracks, and improve processing accuracy. It can be applied to the processing of high-hardness, brittle materials such as single-crystal silicon. However, in the existing water-guided laser processing process design, the water pressure generated can cause the edge of the silicon wafer to crack or collapse, causing damage to the surface quality of the single-crystal silicon. Summary of the invention

[0004] The purpose of the present invention is to provide a single crystal silicon water-guided laser processing system based on double support. By using high-transmittance glass as the bottom support material, it not only provides effective support, but also allows the laser to escape during the processing process, thereby preventing damage to the single crystal silicon, reducing edge collapse and cracks caused by water flow impact, and improving the quality of single crystal silicon water-guided laser processing.

[0005] In a further embodiment, an elastic gasket is installed on the contact surface between the clamp and the single crystal silicon wafer for buffering and protection to prevent the silicon wafer from being scratched.

[0006] According to a first aspect of the present invention, a single crystal silicon water-guided laser processing system based on dual support is provided, comprising:

[0007] Lasers;

[0008] Spectroscope;

[0009] Focusing lens;

[0010] A water-guided machining head, used for ejecting a machining water jet by coupling a light beam with a water beam;

[0011] The single crystal silicon wafer located below the water-guided processing head is subjected to water-guided laser cutting processing by the water jet;

[0012] Transparent glass is attached to the single crystal silicon wafer from the bottom, forms a whole with the single crystal silicon wafer and supports the single crystal silicon wafer from the bottom;

[0013] A clamp, including an upper clamp and a lower clamp, clamping the upper surface of the single crystal silicon wafer and the lower surface of the transparent glass respectively; and

[0014] A buffer layer is arranged between the upper clamp and the upper surface of the single crystal silicon wafer.

[0015] In a further embodiment, the transparent glass is made of silicate glass or organic glass.

[0016] In a further embodiment, the cross-sectional dimensions of the transparent glass are larger than the cross-sectional dimensions of the single crystal silicon wafer.

[0017] In a further embodiment, the thickness of the transparent glass is greater than or equal to the thickness of the single crystal silicon wafer.

[0018] In a further embodiment, the clamp clamps the transparent glass and the single crystal silicon wafer in a multi-point positioning manner.

[0019] In a further embodiment, the buffer layer is an elastic gasket with a thickness of 0.1 to 0.5 mm.

[0020] In a further embodiment, the elastic gasket is one of a rubber gasket, a polyurethane gasket, and a plastic foam gasket.

[0021] In a further embodiment, the single crystal silicon water-conducting laser processing system is provided with a CCD camera for capturing images of the cutting area at a set sampling frequency to obtain an image of the processing area.

[0022] In a further embodiment, the CCD camera is connected to a control system, and the sampling frequency is controlled by the control system to capture a frame of image every time the water-guided machining head moves 0.1 mm, and the image is transmitted to the control system.

[0023] The above-mentioned single crystal silicon water-guided laser processing system based on double support of the embodiment of the present invention can effectively solve the problem of surface cracking caused by water pressure by adding support at the bottom of the single crystal silicon, and can reduce the impact force of water flow and water pressure on the surface of the single crystal silicon, and avoid cracks or ruptures of brittle materials due to the direct action of water flow during processing. Through the bottom glass support, on the one hand, by adding support at the bottom of the single crystal silicon, it helps to reduce the thermal stress caused by the sudden drop in temperature during the cooling process, reduce the risk of crack generation, and prevent surface cracks caused by uneven cooling by evenly distributing the cooling pressure. At the same time, through the ground wave glass support, the laser escape effect provided prevents damage to the single crystal silicon, ensures higher processing accuracy and quality, and is particularly suitable for single crystal silicon laser processing with high precision requirements, avoids surface damage caused by water pressure and thermal stress, and improves overall processing performance. At the same time, the support provided by the bottom glass can improve the stability of the silicon wafer during processing, avoid uneven cooling or deformation of the surface, thereby improving processing accuracy and surface quality.

[0024] Furthermore, an elastic gasket is installed on the contact surface between the fixture and the single crystal silicon wafer to provide buffering and protection, thereby preventing the silicon wafer from being scratched and improving the surface quality of the single crystal silicon wafer during laser processing.

[0025] It should be understood that all combinations of the aforementioned concepts and the additional concepts described in more detail below can be considered as part of the inventive subject matter of the present disclosure as long as such concepts are not mutually inconsistent. In addition, all combinations of the claimed subject matter are considered as part of the inventive subject matter of the present disclosure.

[0026] The foregoing and other aspects, embodiments and features of the present invention can be more fully understood from the following description in conjunction with the accompanying drawings. Other additional aspects of the present invention, such as the features and / or beneficial effects of the exemplary embodiments, will be apparent from the following description or learned from the practice of the specific embodiments according to the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are not intended to be drawn to scale. In the accompanying drawings, each identical or nearly identical component shown in each figure may be represented by the same reference numeral. For clarity, not every component is labeled in each figure. Embodiments of various aspects of the present invention will now be described by way of example and with reference to the accompanying drawings.

[0028] Figure 1 Schematic diagram of a single crystal silicon water-guided laser processing system based on double support according to an embodiment of the present invention.

[0029] Figure 2 It is a schematic diagram of positioning and clamping by a fixture in a single crystal silicon water-guided laser processing system based on double support according to an embodiment of the present invention.

[0030] Figure 3 and Figure 4 They are schematic diagrams of processing results of a single crystal silicon wafer by the single crystal silicon water-conducting laser processing system according to the present invention and a conventional processing technique. DETAILED DESCRIPTION

[0031] In order to better understand the technical content of the present invention, specific embodiments are given and described as follows in conjunction with the accompanying drawings.

[0032] Various aspects of the present invention are described in this disclosure with reference to the accompanying drawings, in which many illustrative embodiments are shown. The embodiments of the present disclosure are not necessarily intended to include all aspects of the present invention. It should be understood that the various concepts and embodiments introduced above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed by the present invention are not limited to any implementation. In addition, some aspects disclosed by the present invention can be used alone or in any appropriate combination with other aspects disclosed by the present invention.

[0033] Combination Figure 1 , Figure 2 As shown, a double-supported single crystal silicon water-guided laser processing system according to an embodiment of the present invention includes a laser 1, a beam splitter 2, a focusing lens 3, a water-guided processing head 4, a single crystal silicon wafer 10 to be processed, a transparent glass 20, a fixture 30, and a control system.

[0034] Combined with Figure 1 As shown, the water-conducting machining head 4 is configured to emit a machining water jet 5 by coupling a light beam with a water beam, so as to perform water-conducting laser cutting processing on a single crystal silicon wafer 10 located below the water-conducting machining head 4 .

[0035] The transparent glass 20 may be made of silicate glass or organic glass, and is bonded to the single crystal silicon wafer 10 from the bottom, forming a whole with the single crystal silicon wafer 10 and supporting the single crystal silicon wafer 10 from the bottom.

[0036] As shown in the accompanying drawings, the cross-sectional size of the transparent glass 20 is larger than the cross-sectional size of the single crystal silicon wafer 10 to form an effective and stable bottom support and relieve thermal stress.

[0037] like Figure 2 As shown, the clamp 30 includes an upper clamp 31 and a lower clamp 32 , which clamp the upper surface of the single crystal silicon wafer 10 and the lower surface of the transparent glass 20 respectively.

[0038] In particular, a buffer layer 33 is disposed between the upper clamp 31 and the upper surface of the single crystal silicon wafer 10 to play a protective and buffering role and prevent the silicon wafer from being scratched.

[0039] As an optional embodiment, the thickness of the transparent glass 20 is greater than or equal to the thickness of the single crystal silicon wafer 10 .

[0040] The clamp 30 clamps the transparent glass 20 and the single crystal silicon wafer 10 in a multi-point positioning manner.

[0041] As an optional embodiment, the aforementioned buffer layer is an elastic gasket with a thickness of 0.1 to 0.5 mm.

[0042] The elastic gasket is one of a rubber gasket, a polyurethane gasket, and a plastic foam gasket (eg, a PE foam material gasket, an EVA gasket, etc.).

[0043] Combination Figure 1 In the illustrated embodiment, the single crystal silicon water-conducting laser processing system is provided with a CCD camera 8 for capturing images of the cutting area at a set sampling frequency to obtain an image of the processing area.

[0044] The CCD camera 8 is connected to the control system of the single crystal silicon water-to-laser processing system. The sampling frequency is controlled by the control system to take a frame of image every time the water-guided processing head 4 moves 0.1 mm, and the image is transmitted to the control system.

[0045] Combination Figure 3 As shown, the processing of the single crystal silicon wafer by the single crystal silicon water-guided laser processing system of the above embodiment of the present invention is shown, and the incision is smooth and has no defects such as burrs, cracks, and gaps. Figure 4 The processing results of the single crystal silicon wafer by the traditional processing technology shown in the figure are that the transition of the cut edge is not smooth and there are edge collapse defects. It can be seen that through the single crystal silicon water-guided laser processing system proposed by the present invention, the design and optimization of the elastic buffer protection between the bottom glass of the single crystal silicon and the clamp can significantly reduce the impact of the water jet on the brittle single crystal silicon, improve the processing accuracy and stability, and improve the surface quality of the finished product processing.

[0046] Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. A person with ordinary knowledge in the technical field to which the present invention belongs may make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the definition of the claims.

Claims

1. A single crystal silicon water-guided laser processing system based on double support, characterized in that: include: Laser (1); Spectroscope (2); Focusing lens (3); A water-guided processing head (4) is used to eject a processing water jet (5) by coupling a light beam with a water beam; The single crystal silicon wafer (10) located below the water-conducting processing head (4) is subjected to water-conducting laser cutting processing via the water jet (5); A transparent glass (20) is attached to the single crystal silicon wafer (10) from the bottom direction, forms an integral body with the single crystal silicon wafer (10) and supports the single crystal silicon wafer (10) from the bottom; A clamp (30), comprising an upper clamp (31) and a lower clamp (32), which clamp the upper surface of the single crystal silicon wafer (10) and the lower surface of the transparent glass (20) respectively; and A buffer layer (33) is arranged between the upper clamp (31) and the upper surface of the single crystal silicon wafer (10).

2. The single crystal silicon water-guided laser processing system based on dual support according to claim 1 is characterized in that: The transparent glass (20) is made of silicate glass or organic glass.

3. The double-supported single crystal silicon water-guided laser processing system according to claim 1 is characterized in that: The cross-sectional dimensions of the transparent glass (20) are greater than the cross-sectional dimensions of the single crystal silicon wafer (10).

4. The single crystal silicon water-guided laser processing system based on dual support according to claim 1 is characterized in that: The thickness of the transparent glass (20) is greater than or equal to the thickness of the single crystal silicon wafer (10).

5. The single crystal silicon water-guided laser processing system based on dual support according to claim 1 is characterized in that: The clamp (30) clamps the transparent glass (20) and the single crystal silicon wafer (10) in a multi-point positioning manner.

6. The double-supported single crystal silicon water-guided laser processing system according to claim 1 is characterized in that: The buffer layer (33) is an elastic gasket with a thickness of 0.1 to 0.5 mm.

7. The single crystal silicon water-guided laser processing system based on dual support according to claim 6 is characterized in that: The elastic gasket is one of a rubber gasket, a polyurethane gasket and a plastic foam gasket.

8. The single crystal silicon water-guided laser processing system based on dual support according to claim 1 is characterized in that: The single crystal silicon water-conducting laser processing system is provided with a CCD camera (8) for collecting and photographing the cutting area according to a set sampling frequency to obtain an image of the processing area.

9. The double-support-based single crystal silicon water-guided laser processing system according to claim 8, characterized in that: The CCD camera (8) is connected to a control system, and the sampling frequency is controlled by the control system to capture a frame of image every time the water-guided machining head (4) moves 0.1 mm, and the image is transmitted to the control system.

10. The single crystal silicon water-guided laser processing system based on dual support according to any one of claims 1 to 9, characterized in that: The light transmittance of the transparent glass (20) is above 90%.

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