Carrier for growing graphene wafer through vapor deposition, feeding mechanism and vapor deposition device

Abstract

The invention relates to a carrier for growing a graphene wafer through vapor deposition, a feeding mechanism and a vapor deposition device.The carrier comprises at least two sets of bearing units, and the bearing units are sequentially arranged in the airflow direction of carbon source gas; the limiting assemblies are located on the bearing units and used for limiting the wafers, and the limiting assemblies are configured to enable the planes where the wafers are located to be parallel to the airflow direction of the carbon source gas and enable the wafers on the two adjacent sets of bearing units to be arranged in a staggered mode in the direction perpendicular to the wafer planes. According to the invention, the uniformity of the airflow field and the temperature field is facilitated, and batch and uniform preparation can be realized.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer scale preparation equipment, and in particular to a carrier, a loading mechanism and a vapor deposition device for growing graphene wafers by vapor deposition. Background Art

[0002] Graphene grown directly on non-metallic substrates such as quartz, sapphire, SiO2 / Si, Si3N4, etc. has excellent properties in the fields of optics, electricity, and heat. In the process of batch and large-scale preparation of graphene wafers, the requirements for the equipment temperature field and airflow field are relatively high.

[0003] In order to solve these problems, researchers are also exploring solutions. For example, Chinese patent CN114657531A (hereinafter referred to as Document 1) discloses a carrier that evenly distributes wafers in the vertical direction. This carrier structure is conducive to increasing production capacity in the longitudinal direction. Another example is Chinese patent C11243591A (hereinafter referred to as Document 2) discloses a carrier that increases the number of wafers arranged in the horizontal direction. This carrier is conducive to increasing the production capacity of graphene wafers in the lateral direction.

[0004] As described in the above two patents, in a horizontal tube furnace, the method disclosed in document 1 is beneficial to the uniformity of the airflow, but is limited by the size of the quartz tube diameter and the batch preparation process, and the production capacity is limited. In the technology disclosed in document 2, the arrangement of the wafers is perpendicular to the air intake direction, and the wafers will block the airflow, which is not conducive to the production of high-quality graphene wafers.

[0005] Therefore, existing carriers generally have problems such as limited number of pieces, poor temperature uniformity or airflow obstruction, and cannot guarantee the consistency of a single batch of samples. Summary of the invention

[0006] In view of the above problems, the first object of the present invention is to provide a carrier for growing graphene wafers by vapor deposition, which is beneficial to the uniformity of the air flow field and the temperature field and can realize batch and uniform production.

[0007] The second object of the present invention is to provide a feeding mechanism.

[0008] A third object of the present invention is to provide a vapor deposition apparatus.

[0009] To achieve the above object, the present invention adopts the following technical solutions: The carrier for growing graphene wafers by vapor deposition provided by the present invention comprises: at least two groups of carrying units, which are arranged in sequence along the gas flow direction of a carbon source gas; a limiting component, which is located on the carrying units and is used to limit the wafer, and the limiting component is configured to make the plane where the wafer is located parallel to the gas flow direction of the carbon source gas, and at the same time make the wafers on two adjacent groups of the carrying units staggered in a direction perpendicular to the wafer plane.

[0010] The carrier, preferably, has the same offset spacing between wafers on adjacent carrying units in a direction perpendicular to the wafer plane.

[0011] For the carrier, preferably, along the gas flow direction of the carbon source gas, the distance between the centers of adjacent carrier units is 1.07d-1.2d, where d is the diameter of the wafer.

[0012] In the carrier, preferably, the distance between two adjacent wafers on the same carrying unit is 4mm-8mm.

[0013] Preferably, the positioning assembly of the carrier comprises a plurality of positioning posts, each of the positioning posts is provided with a plurality of positioning slots, and the wafer is clamped in the positioning slots.

[0014] The feeding mechanism provided by the present invention comprises: A loading cantilever structure for carrying wafers; A lifting mechanism, connected to the feeding cantilever structure, and used to lift and lower the feeding cantilever structure; A translation mechanism, arranged at the bottom of the lifting mechanism, for translationally moving the loading cantilever structure; A support plate, disposed at the bottom of the translation mechanism, for supporting the feeding mechanism; The rotating mechanism is arranged on the supporting plate and is located below the bottom plate of the carrier, and is used for rotating the carrier.

[0015] The feeding mechanism, preferably, the lifting mechanism includes a lead screw, a first slider, a guide column and a lead screw driving mechanism; the lead screw is vertically arranged, and two guide columns are respectively arranged on both sides of the lead screw, the middle part of the first slider is sleeved on the lead screw, and the two side positions are sleeved on the two guide columns, and the lead screw driving mechanism is connected to the lead screw to drive the lead screw to rotate; when the lead screw rotates, the first slider rises or falls under the guidance of the guide column; the lead screw driving mechanism is a mechanical hand-cranked mechanism or a motor.

[0016] The feeding mechanism, preferably, the translation mechanism includes a second slider, a slide rail and a slider driving mechanism; the slide rail is arranged on the support plate; the second slider is arranged below the lifting mechanism; the slider driving mechanism is connected to the second slider to drive the second slider to slide on the slide rail; the slider driving mechanism is a stepping motor.

[0017] The feeding mechanism, preferably, the rotating mechanism is a rotating disk.

[0018] The vapor deposition device provided by the present invention comprises the carrier described above, and the carrier is located in the vapor deposition chamber.

[0019] The present invention adopts the above technical solution, which has the following advantages: The present invention can realize batch, large-scale and stable preparation of high-quality graphene wafers, can realize rapid loading and unloading, is beneficial to the uniformity of air flow field and temperature field, and ensures stable and uniform products. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Various other advantages and benefits will become apparent to those of ordinary skill in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention. Throughout the accompanying drawings, the same reference numerals are used to represent the same components. In the accompanying drawings: Figure 1 is a schematic diagram of the main structure of the carrier of the present invention; Figure 2 yes Figure 1 Partial detail drawing of adjacent limit columns; Figure 3 is a schematic diagram of a top view of the structure of the carrier of the present invention; Figure 4 It is a structural schematic diagram of the feeding mechanism of the present invention; Figure 5 It is a structural schematic diagram of the lifting mechanism of the present invention; Figure 6 is a structural schematic diagram of the translation mechanism of the present invention; Figure 7 It is a simulated cloud diagram of the temperature field of the carrier in the quartz tube; Figure 8 It is the vector diagram of the airflow field distribution of the vehicle.

[0021] The reference numerals in the figures are as follows: 1-first bearing unit; 2-second bearing unit; 3-wafer; 4-limiting column; 5-limiting groove; 6-bearing base plate; 7-loading cantilever structure; 8-lifting mechanism; 801-screw; 802-first slider; 803-guide column; 804-screw drive mechanism; 9-translation mechanism; 901-second slider; 902-slide rail; 903-slider drive mechanism; 10-support plate; 11-rotation mechanism. DETAILED DESCRIPTION

[0022] The exemplary embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present invention and to fully convey the scope of the present invention to those skilled in the art.

[0023] This embodiment provides a carrier for growing graphene wafers by vapor deposition. Figure 1 As shown, the carrier includes a first carrying unit 1 and a second carrying unit 2 for carrying wafers 3, and the first carrying unit 1 and the second carrying unit 2 are arranged in sequence along the gas flow direction of the carbon source gas. The first carrying unit 1 and the second carrying unit 2 are respectively provided with a limiting component to limit the plurality of wafers, so that the wafer plane is parallel to the gas flow direction of the carbon source gas; in the direction perpendicular to the wafer plane, the wafers carried by the first carrying unit 1 and the second carrying unit 2 are staggered.

[0024] On the one hand, the staggered arrangement of wafers at adjacent carrier units increases the resistance during the flow of the airflow, slowing down the flow rate of the airflow, which is beneficial to the full cracking of the carbon source gas, effectively ensuring the uniformity of the graphene deposition thickness at each carrier unit, while saving the carbon source gas; on the other hand, the staggered arrangement of wafers at adjacent carrier units generates air disturbances, which can enhance heat exchange, improve the uniformity of internal and external temperatures, and thereby improve the uniformity of graphene deposition.

[0025] It is understandable that the carrying units are not limited to two groups, and more groups can be set according to actual production capacity requirements. Several groups of carrying units are arranged in sequence along the gas flow direction of the carbon source gas, and the wafers of adjacent carrying units are arranged in an alternating manner.

[0026] In one embodiment, Figure 2 and 3 As shown, the limiting assembly includes four limiting columns 4 and a plurality of limiting grooves 5 arranged at intervals on the limiting columns, and the limiting grooves 5 of adjacent bearing units are staggered in a direction perpendicular to the wafer plane.

[0027] It is understandable that the limit assembly can also adopt other structures, such as replacing the limit column with an arc-shaped limit plate to better fit the shape of the wafer, or replacing the limit groove with a limit protrusion. The limit assemblies of each bearing unit are not necessarily the same and can be set separately according to the limit requirements.

[0028] In one embodiment, Figure 1-3 As shown, the first carrying unit 1 and the second carrying unit 2 are arranged on the same carrying base plate 6. It is understandable that each carrying unit can use a separate carrying base plate, and the wafer staggered arrangement can be achieved by adjusting the position of the carrying base plate.

[0029] In the above embodiment, preferably, in a direction perpendicular to the wafer plane, the offset distances of the wafers of adjacent carrying units are equal, thereby making the internal and external heat exchange more uniform and stable.

[0030] In the above embodiment, preferably, along the gas flow direction of the carbon source gas, the center line distance between adjacent bearing units is 1.07d-1.2d, where d is the wafer diameter. This is conducive to achieving uniform gas flow field and temperature field. In this embodiment, the wafer diameter is 150mm, and the center line distance between the first bearing unit 1 and the second bearing unit 2 is 160-180mm.

[0031] In the above embodiment, preferably, the distance between two adjacent wafers of the same carrier unit is 4 mm-8 mm, which is conducive to realizing the limited growth of graphene.

[0032] like Figure 4 As shown, the present invention also provides a loading mechanism for carrying the wafers in the carrier, including: a loading cantilever structure 7, used to carry the wafer 3; a lifting mechanism 8, connected to the loading cantilever structure 7, used to lift the loading cantilever structure 7; a translation mechanism 9, arranged at the bottom of the lifting mechanism 8, used to translate the loading cantilever structure 7; a support plate 10, arranged at the bottom of the translation mechanism 9, used to carry the loading mechanism; a rotating mechanism 11, arranged on the support plate 10 and located below the carrier's supporting bottom plate 6, used to rotate the carrier.

[0033] In the above embodiment, preferably, Figure 5 As shown, the lifting mechanism 8 includes a lead screw 801, a first slider 802, a guide column 803 and a lead screw drive mechanism 804; the lead screw 801 is vertically arranged, and two guide columns are respectively arranged on both sides of the lead screw 801. The middle part of the first slider 802 is sleeved on the lead screw 801, and the two sides are sleeved on the two guide columns 803. The lead screw drive mechanism 804 is connected to the lead screw 801 to drive the lead screw 801 to rotate; when the lead screw 801 rotates, the first slider 802 rises or falls under the guidance of the guide column 803; the lead screw drive mechanism 804 is a mechanical hand-cranked mechanism or a motor.

[0034] In the above embodiment, preferably, Figure 6 As shown, the translation mechanism 9 includes a second slider 901, a slide rail 902 and a slider driving mechanism 903; the slide rail 902 is arranged on the support plate 10; the second slider 901 is arranged below the lifting mechanism 8; the slider driving mechanism 903 is connected to the second slider 901 to drive the second slider 901 to slide on the slide rail 902; the slider driving mechanism 903 is a stepping motor.

[0035] In the above embodiment, preferably, the rotating mechanism is a rotating disk.

[0036] The working process of the loading mechanism described in the present invention is: first place the wafer 3 on the loading cantilever structure 7, adjust it to a suitable position through the lifting mechanism 8, and send it to the carrier by the translation mechanism 9. The lifting mechanism 8 moves down, and the wafer 3 falls on the limiting column, and the loading cantilever structure 7 is withdrawn with the translation mechanism 9. The lifting mechanism 8 and the translation mechanism 9 can be realized manually or automatically. After completing the loading action of the first bearing unit 1, it is rotated to the second bearing unit 2 through the rotating mechanism 11, and the loading action is completed with the first bearing unit loading step. The grown products can also be taken out through this structure. The work of manual alignment during the loading and unloading process is reduced, and the efficiency of loading and unloading is improved.

[0037] The present invention also provides a vapor deposition device, comprising the above-mentioned carrier, wherein the carrier is located in a vapor deposition chamber-a quartz tube, and is used for depositing and growing graphene on the surface of a wafer to obtain a graphene wafer.

[0038] like Figure 7 As shown, four groups of supporting units are used for chemical vapor deposition growth of graphene wafers. Air is taken in at the left end of the quartz tube and air is exhausted at the right end of the quartz tube. The overall airflow is from left to right, simulating the temperature field in the entire quartz tube. It can be seen that the temperature field at the four groups of supporting units is relatively uniform.

[0039] like Figure 8 As shown, three groups of supporting units are used to carry out chemical vapor deposition growth of graphene wafers. The overall airflow is from right to left, presenting a laminar state, and the airflow field is uniform, which is conducive to growth.

[0040] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A carrier for growing graphene wafers by vapor deposition, characterized in that: include: At least two groups of carrier units, the carrier units are arranged in sequence along the gas flow direction of the carbon source gas; A limiting component is located on the carrying unit and is used to limit the wafer. The limiting component is configured to make the plane where the wafer is located parallel to the gas flow direction of the carbon source gas, and at the same time make the wafers on two adjacent groups of the carrying units staggered in a direction perpendicular to the wafer plane.

2. The carrier according to claim 1, characterized in that: In a direction perpendicular to the wafer plane, the offset spacings of the wafers of adjacent carrying units are equal.

3. The carrier according to claim 1, characterized in that: Along the gas flow direction of the carbon source gas, the distance between the centers of adjacent carrier units is 1.07d-1.2d, where d is the diameter of the wafer.

4. The carrier according to claim 1, characterized in that: The distance between two adjacent wafers on the same carrier unit is 4mm-8mm.

5. The carrier according to claim 1, characterized in that: The limiting assembly includes a plurality of limiting posts, each of which is provided with a plurality of limiting slots, and the wafer is clamped in the limiting slots.

6. A loading mechanism for carrying wafers in a carrier according to any one of claims 1 to 5, characterized in that: include: A loading cantilever structure for carrying wafers; A lifting mechanism, connected to the feeding cantilever structure, and used to lift and lower the feeding cantilever structure; A translation mechanism, arranged at the bottom of the lifting mechanism, for translationally moving the loading cantilever structure; A support plate, disposed at the bottom of the translation mechanism, for supporting the feeding mechanism; The rotating mechanism is arranged on the supporting plate and is located below the bottom plate of the carrier, and is used for rotating the carrier.

7. The feeding mechanism according to claim 6, characterized in that: The lifting mechanism comprises a lead screw, a first slider, a guide column and a lead screw driving mechanism; The lead screw is arranged vertically, and two guide pillars are arranged on both sides of the lead screw respectively. The middle part of the first slider is sleeved on the lead screw, and the two sides are sleeved on the two guide pillars. The lead screw driving mechanism is connected to the lead screw to drive the lead screw to rotate; when the lead screw rotates, the first slider rises or falls under the guidance of the guide pillars; The screw drive mechanism is a mechanical hand-cranked mechanism or a motor.

8. The feeding mechanism according to claim 6, characterized in that: The translation mechanism comprises a second slider, a slide rail and a slider driving mechanism; The slide rail is arranged on the support plate; The second sliding block is arranged below the lifting mechanism; The slider driving mechanism is connected to the second slider to drive the second slider to slide on the slide rail; The slider driving mechanism is a stepping motor.

9. The feeding mechanism according to claim 6, characterized in that: The rotating mechanism is a rotating disk.

10. A vapor deposition device, characterized in that: The carrier comprises the carrier according to any one of claims 1 to 5, wherein the carrier is located in a vapor deposition chamber.

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