Detection method, device and equipment based on wafer detection system and storage medium

Abstract

The invention discloses a detection method and device based on a wafer detection system, equipment and a storage medium. The wafer detection system comprises a laser light source, a wafer movement module and a position detection module, the laser source is used for emitting detection laser; the wafer movement module is used for reflecting the detection laser to generate reflected laser; the position detection module is used for receiving reflected laser; the detection method comprises the following steps: acquiring a first included angle between detection laser and a wafer movement module and a second included angle between reflection laser and a position detection module; acquiring the movement distance of the reflected laser on the position detection module when the wafer movement module moves; calculating motion state parameters of the wafer motion module according to the first included angle, the second included angle and the movement distance; the motion state parameters comprise the inclination angle and the amplitude. By adopting the technical scheme, the motion state parameters of the wafer motion module are simply and efficiently calculated, so that a worker can conveniently calibrate the wafer motion module, and the wafer detection precision is further improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor detection technology, and in particular to a detection method, device, equipment and storage medium based on a wafer detection system. Background Art

[0002] In semiconductor inspection, during the movement of the wafer or detection module, the relative distance between the wafer surface, the position detection module and the signal collection module needs to remain fixed. Among them, the detection module and the signal collection module are fixed in position, and there is relative movement between the wafer and the two modules. The wafer is placed on a motion carrier to form a wafer motion module. The motion carrier moves the wafer detection part to the detection range through horizontal and rotational movements.

[0003] During this process, the moving platform has poor levelness or vibration, which leads to deviations in the motion state parameters of the wafer on the moving platform, affecting the detection accuracy of the wafer. Currently, there is a lack of effective measures to detect the motion state parameters of the wafer. Summary of the invention

[0004] The present invention provides a detection method, device, equipment and storage medium based on a wafer detection system, which simply and efficiently calculate the motion state parameters of the wafer so that the staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

[0005] According to one aspect of the present invention, a detection method based on a wafer detection system is provided, wherein the wafer detection system comprises: a laser light source, a wafer motion module and a position detection module;

[0006] The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser;

[0007] The detection method comprises:

[0008] Acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module;

[0009] Acquire the moving distance of the reflected laser on the position detection module when the wafer motion module moves;

[0010] The motion state parameters of the wafer motion module are calculated according to the first angle, the second angle and the moving distance; the motion state parameters include a tilt angle and an amplitude.

[0011] Optionally, obtaining a moving distance of the reflected laser on the position detection module when the wafer motion module moves includes:

[0012] Acquire a first distance set of the reflected laser moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals; wherein the horizontal movement includes the wafer motion module moving closer to or away from the position detection module; and the first distance set includes a plurality of first distance element values;

[0013] Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes:

[0014] The tilt angle of the wafer motion module is calculated according to the first angle, the second angle and the first distance set.

[0015] Optionally, calculating the tilt angle of the wafer motion module according to the first angle, the second angle and the first distance set includes:

[0016] A first height difference set is determined according to the first angle, the second angle and the first distance set; the first height difference set includes a plurality of first height difference element values, and the first height difference element value corresponds to the first distance element value; the first height difference element value refers to the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state;

[0017] Acquire a horizontal movement distance set; the horizontal movement distance set includes a plurality of horizontal movement distance element values; the horizontal movement distance element value refers to a first distance difference between an intersection position between the wafer movement module and a preset plane and an incident position of the detection laser on the wafer movement module in a second direction in any movement state; the second direction intersects with the first direction;

[0018] The tilt angle is determined according to the first height difference set and the horizontal movement distance set.

[0019] Optionally, obtaining a horizontal movement distance set includes:

[0020] Determine a second distance difference in the second direction between an incident position of the detection laser in a current state of the wafer motion module and an incident position in an initial state;

[0021] Determine a horizontal motion distance element value according to the second distance difference and the preset interval;

[0022] A set of multiple horizontal movement distance element values ​​determined by the wafer movement module performing multiple horizontal movements at preset intervals is used as the horizontal movement distance set.

[0023] Optionally, determining the tilt angle according to the first height difference set and the horizontal movement distance set includes:

[0024] Determine a tilt angle set according to the first height difference set and the horizontal movement distance set; the tilt angle set includes a plurality of tilt angle element values, and the tilt angle element values ​​correspond to the first height difference element values ​​and the horizontal movement distance element values;

[0025] The tilt angle is determined according to an average value of a plurality of tilt angle element values.

[0026] Optionally, obtaining a moving distance of the reflected laser on the position detection module when the wafer motion module moves includes:

[0027] Acquire a second distance moved by the reflected laser on the position detection module during the rotation of the wafer motion module;

[0028] Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes:

[0029] The amplitude of the wafer motion module is calculated according to the first angle, the second angle, and the second distance.

[0030] Optionally, calculating the motion state parameter of the wafer motion module according to the first angle, the second angle, and the moving distance includes:

[0031] Calculate the motion state parameters of the wafer motion module according to the following height difference formula;

[0032]

[0033] Among them, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, D represents the moving distance of the reflected laser on the position detection module, θ1 represents the first angle, and θ2 represents the second angle.

[0034] According to another aspect of the present invention, there is provided a detection device based on a wafer detection system, wherein the wafer detection system comprises: a laser light source, a wafer motion module and a position detection module;

[0035] The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser;

[0036] The detection device comprises:

[0037] An angle acquisition module, used to acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module;

[0038] A moving distance acquisition module, used for acquiring the moving distance of the reflected laser on the position detection module when the wafer movement module moves;

[0039] A calculation module is used to calculate the motion state parameters of the wafer motion module according to the first angle, the second angle and the moving distance; the motion state parameters include a tilt angle and an amplitude.

[0040] According to another aspect of the present invention, a detection device is provided, the detection device comprising:

[0041] at least one processor; and

[0042] a memory communicatively connected to the at least one processor; wherein,

[0043] The memory stores a computer program executable by the at least one processor, and the computer program is executed by the at least one processor so that the at least one processor can perform the detection method described in any embodiment of the present invention.

[0044] According to another aspect of the present invention, a computer-readable storage medium is provided, wherein the computer-readable storage medium stores computer instructions, and the computer instructions are used to enable a processor to implement the detection method described in any embodiment of the present invention when executed.

[0045] In the embodiment of the present invention, the first angle between the detection laser and the wafer motion module and the second angle between the reflected laser and the position detection module are first obtained, and the moving distance of the reflected laser on the position detection module when the wafer motion module moves is further obtained, and finally the motion state parameters of the wafer motion module are calculated according to the first angle, the second angle and the moving distance. The above technical solution can simply and efficiently calculate the motion state parameters of the wafer motion module, so that the staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

[0046] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0048] Figure 1 is a structural schematic diagram of a first wafer inspection system provided according to an embodiment of the present invention;

[0049] Figure 2 is a flow chart of a first detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0050] Figure 3 is a schematic diagram of a propagation path of a detection laser light path provided according to an embodiment of the present invention;

[0051] Figure 4 is a flow chart of a second detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0052] Figure 5 is a schematic diagram of a state change of a wafer motion module provided according to an embodiment of the present invention;

[0053] Figure 6 is a flow chart of a third detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0054] Figure 7 is a flow chart of a fourth detection method based on a wafer detection system provided according to an embodiment of the present invention;

[0055] Figure 8 is a schematic diagram of a state change of a second wafer motion module provided in an embodiment of the present invention;

[0056] Fig. 9 is a structural schematic diagram of a second wafer inspection system provided according to an embodiment of the present invention;

[0057] Fig.10 is a schematic structural diagram of a wafer motion module provided according to an embodiment of the present invention;

[0058] Fig.11 is a schematic structural diagram of a detection device based on a wafer detection system provided according to an embodiment of the present invention;

[0059] Fig.12 It is a schematic diagram of the structure of a detection device provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0060] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0061] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, any variation of the terms "including" and "having" is intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0062] Figure 1 is a schematic structural diagram of a first wafer inspection system provided according to an embodiment of the present invention, Figure 2 It is a flow chart of the first detection method based on the wafer detection system provided according to an embodiment of the present invention; this embodiment can be applied to detect the motion state parameters of the wafer, and the method can be executed by a wafer detection device, which can be implemented in the form of hardware and / or software. The wafer detection system includes: a laser light source (not shown in the figure), a wafer motion module 1 and a position detection module 2; the laser light source is used to emit a detection laser 3; the wafer motion module 1 is used to reflect the detection laser 3 to generate a reflected laser 4; the position detection module 2 is used to receive the reflected laser 4;

[0063] like Figure 2 As shown, the structure detection method based on the above structure includes:

[0064] S110, obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0065] Specifically, Figure 1 As shown, the first angle θ1 may be the angle between the detection laser 3 and the wafer motion module 1 , and the second angle may be the angle between the reflected laser 4 after shaping and the position detection module 2 .

[0066] S120, obtaining a moving distance of the reflected laser on the position detection module when the wafer motion module moves.

[0067] Specifically, Figure 1 As shown, in case 1, if the wafer motion module 1 has a tilt angle, when the wafer motion module 1 is moving horizontally, the incident position of the detection laser 3 on the wafer motion module 1 will change. Furthermore, the reflected laser 4 incident on the position detection module 2 will also move in the position detection module 2 following the change of the incident position.

[0068] In the second case, if the wafer motion module 1 vibrates during rotation, the wafer motion module 1 will move in the vertical direction. At this time, the incident position of the detection laser 3 on the wafer motion module 1 will also change. Furthermore, the reflected laser 4 incident on the position detection module 2 will also move in the position detection module 2 following the change of the incident position.

[0069] S130, calculating motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance.

[0070] Among them, the motion state parameters include tilt angle and amplitude.

[0071] Specifically, the tilt angle refers to the angle between the surface of the wafer 12 and the horizontal plane when the horizontality of the wafer motion module 1 is poor. The amplitude refers to the amplitude of the vertical vibration of the wafer motion module 1 when the wafer motion module 1 performs rotational motion.

[0072] Figure 3 is a schematic diagram of a propagation path of a detection laser light path provided according to an embodiment of the present invention. Optionally, the motion state parameters of the wafer motion module are calculated according to the first angle, the second angle and the moving distance, including:

[0073] Calculate the motion state parameters of the wafer motion module according to the following height difference formula;

[0074]

[0075] Among them, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, D represents the moving distance of the reflected laser on the position detection module, θ1 represents the first angle, and θ2 represents the second angle.

[0076] For example, Figure 3 As shown, h represents the height difference in the first direction Y between the incident position a of the detection laser 3 in the current state of the wafer motion module 1 and the incident position b in the initial state, D represents the moving distance of the reflected laser 4 on the position detection module 2, θ1 represents the first angle, and θ2 represents the second angle.

[0077] In the embodiment of the present invention, the first angle between the detection laser and the wafer motion module and the second angle between the reflected laser and the position detection module are first obtained, and the moving distance of the reflected laser on the position detection module when the wafer motion module moves is further obtained, and finally the motion state parameters of the wafer motion module are calculated according to the first angle, the second angle and the moving distance. The above technical solution can simply and efficiently calculate the motion state parameters of the wafer motion module, so that the staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

[0078] Figure 4 is a flow chart of a second detection method based on a wafer detection system provided according to an embodiment of the present invention. Figure 5 1 is a schematic diagram of a wafer motion module state change according to an embodiment of the present invention. The embodiment of the present invention describes the detection of a wafer tilt angle.

[0079] S210, obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0080] S220, obtaining a first set of distances that the reflected laser moves on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals.

[0081] Specific, combined Figure 4 and Figure 5 , horizontal movement includes the movement of the wafer motion module 1 toward or away from the position detection module 2, and the first distance set includes multiple first distance element values. The preset interval refers to the distance of each horizontal movement of the wafer motion module 1, which can be 10mm. Exemplarily, if there is an inclination angle α between the wafer motion module 1 and the horizontal plane, the wafer motion module 1 is horizontally moved once from the initial state m at a preset interval to the current state n, the incident position of the detection laser 3 on the wafer motion module 1 when the wafer motion module 1 is in the initial state m is point a, at this time point a can be the center position of the wafer motion module 1, the incident position of the detection laser 3 on the wafer motion module 1 in the current state n is point b, at this time the first distance moved by the reflected laser 4 on the position detection module 2 is D1, the wafer motion module 1 is horizontally moved twice from the initial state m at a preset interval to the current state n, at this time the first distance moved by the reflected laser 4 on the position detection module 2 is D2, and so on. The first distance element values ​​can be D1, D2, D3... The first distance set is represented by {(D1), (D2), (D3)...}.

[0082] S230, calculating a tilt angle of the wafer motion module according to the first angle, the second angle, and the first distance set.

[0083] In an embodiment of the present invention, a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module are first obtained, and then a first distance set of the reflected laser moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals is obtained. Finally, the inclination angle of the wafer motion module is calculated based on the first angle, the second angle and the first distance set. The above technical solution can simply and efficiently calculate the inclination angle of the wafer motion module, so that the staff can calibrate the wafer motion module, thereby improving the wafer detection accuracy.

[0084] Figure 6 is a flow chart of a third detection method based on a wafer detection system provided according to an embodiment of the present invention. The embodiment of the present invention further describes how to calculate the tilt angle of the wafer motion module according to the first angle, the second angle and the first distance set. Figure 6 As shown, the detection method comprises the following steps:

[0085] S310, obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0086] S320, acquiring a first set of distances that the reflected laser moves on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals.

[0087] S330: Determine a first height difference set according to the first angle, the second angle, and the first distance set.

[0088] Specifically, Figure 5 As shown, the first height difference set includes multiple first height difference element values, and the first height difference element value corresponds to the first distance element value. The first height difference element value refers to the height difference in the first direction Y between the incident position a of the detection laser 3 in the current state of the wafer motion module 1 and the incident position b in the initial state. It should be noted that n represents the current state of the wafer motion module 1, and m represents the initial state of the wafer motion module 1. The first angle θ1, the second angle θ2 and the element values ​​D1, D2, D3 in the first distance set {(D1), (D2), (D3), ...} are substituted into the height difference formula respectively. Exemplarily, when the first distance is D1, the first angle θ1, the second angle θ2 and D1 are substituted into the height difference formula to calculate the first height difference h1, and when the first distance is D2, the first angle θ1, the second angle θ2 and D2 are substituted into formula 1 to calculate the second height difference h2 .... {(h1), (h2), (h3), ...} represents a first height difference set.

[0089] S340: Obtain a set of horizontal movement distances.

[0090] Specifically, Figure 5As shown, the horizontal movement distance set includes multiple horizontal movement distance element values; the horizontal movement distance element value refers to the intersection position between the wafer movement module 1 and the preset plane t in any movement state, and the first distance difference of the incident position of the detection laser 3 on the wafer movement module 1 in the second direction X; the second direction X intersects with the first direction Y.

[0091] Exemplarily, when the wafer motion module moves from an initial state m to a current state n, the horizontal motion distance element value may be the intersection position c between the wafer motion module 1 and the preset plane t in the current state n, and the first distance difference in the second direction X between the incident position b of the detection laser 3 on the wafer motion module 1.

[0092] The following describes how to obtain a horizontal movement distance set. Obtaining the horizontal movement distance set includes: determining a second distance difference in a second direction between an incident position of the detection laser in the current state of the wafer movement module and an incident position in the initial state; determining a horizontal movement distance element value according to the second distance difference and a preset interval; and taking a set of multiple horizontal movement distance element values ​​determined by multiple horizontal movements of the wafer movement module at preset intervals as the horizontal movement distance set.

[0093] Specifically, the second distance difference may be calculated according to a second distance difference calculation formula, which is:

[0094]

[0095] Wherein, s1 represents the second distance difference, which represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, and θ1 represents the first angle.

[0096] For example, Figure 5 As shown, the height difference between the incident position b of the detection laser 3 in the current state n of the wafer motion module 1 and the incident position a in the initial state m in the first direction Y and the first angle θ1 are substituted into the second distance difference calculation formula to calculate the second distance difference s1.

[0097] When the wafer motion module 1 moves once from the initial state m to the current state n at a preset interval, the second distance difference is recorded as s11; when the wafer motion module 1 moves twice from the initial state m to the current state n at a preset interval, the second distance difference is recorded as s12…

[0098] The moving distance of the wafer motion module 1 is S2, and the preset interval can be 10 mm. When the wafer motion module 1 moves horizontally once from the initial state m to the current state n, the moving distance s21 of the wafer motion module 1 is 10 mm. If the wafer motion module 1 moves horizontally twice from the initial state m to the current state n, the moving distance s22 of the wafer motion module 1 is 20 mm.

[0099] The horizontal movement distance element value x is the sum of the second distance difference s1 and the movement distance s2 of the wafer movement module 1. That is to say, the multiple horizontal movement distance element values ​​determined by the wafer movement module 1 at multiple horizontal movements at preset intervals are x1=s11+s21, x2=s12+s22,..., which are taken as the horizontal movement distance set {(x1), (x2), (x3),...}.

[0100] S350: Determine a tilt angle according to the first height difference set and the horizontal movement distance set.

[0101] The following further describes how to determine the tilt angle. Determining the tilt angle according to the first height difference set and the horizontal movement distance set includes:

[0102] Determine a tilt angle set according to a first height difference set and a horizontal movement distance set; the tilt angle set includes multiple tilt angle element values, and the tilt angle element values ​​correspond to the first height difference element values ​​and the horizontal movement distance element values; determine the tilt angle according to the average value of the multiple tilt angle element values.

[0103] Specifically, Figure 5 As shown, when the wafer motion module 1 moves horizontally once from the initial state m to the current state n at a preset interval, the first distance element value is D1, the first height difference element value is h1, and the horizontal motion distance element value is x1; when the wafer motion module 1 moves horizontally twice from the initial state m to the current state n at a preset interval, the first distance element value is D2, the first height difference element value is h2, and the horizontal motion distance element value is x2; when the wafer motion module 1 moves horizontally three times from the initial state m to the current state n at a preset interval, the first distance element value is D3, the first height difference element value is h3, and the horizontal motion distance element value is x3…

[0104] Substituting the first height difference element values ​​in the first height difference set {(h1), (h2), (h3), ...} and the horizontal movement distance element values ​​in the first distance set horizontal movement distance set {(x1), (x2), (x3), ...} into the linear relationship formula can determine the tilt angle set.

[0105] The linear relationship is:

[0106] h=tan(α)·x

[0107] Among them, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, x represents the horizontal motion distance element value, and α represents the tilt angle.

[0108] For example, when the first height difference element value is h1 and the horizontal movement distance element value is x1, the tilt angle element value is α1; when the first height difference element value is h2 and the horizontal movement distance element value is x2, the tilt angle element value is α2.... The tilt angle set is recorded as {(α1), (α2), (α3), ...}. The tilt angle is determined according to the average value of multiple tilt angle element values.

[0109] It is understandable that due to the interference of factors such as the resolution of the position detection module 2, the vibration of the wafer motion module 1 during the movement, and the warping of the wafer surface, the first height difference element value and the horizontal movement distance element value are not in an absolute linear relationship. Therefore, it is necessary to perform multi-point testing and obtain the average value to increase the accuracy of the tilt angle detection of the wafer motion module 1.

[0110] The embodiment of the present invention first obtains a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module, and then obtains a first distance set of the reflected laser moving on the position detection module when the wafer motion module moves horizontally for multiple times at preset intervals, and determines a first height difference set based on the first angle, the second angle and the first distance set, further obtains a horizontal movement distance set, and finally determines the inclination angle based on the first height difference set and the horizontal movement distance set, so as to simply and efficiently calculate the inclination angle of the wafer, so that the staff can calibrate the wafer motion module and further improve the wafer detection accuracy.

[0111] Figure 7 It is a flow chart of a fourth detection method based on a wafer detection system provided according to an embodiment of the present invention. Figure 8 1 is a schematic diagram of the state change of the second wafer motion module provided according to an embodiment of the present invention. This embodiment illustrates the calculation of the wafer vibration amplitude. Figure 7 As shown, the detection method includes:

[0112] S410, obtaining a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module.

[0113] S420, obtaining a second distance that the reflected laser moves on the position detection module during the rotation of the wafer motion module.

[0114] Specifically, Figure 8As shown, during the rotational movement of the wafer motion module 1, the wafer motion module 1 vibrates in the first direction Y, and the wafer motion module 1 rotates within a cycle, wherein one cycle may be 5-10 circles. The initial state may be the highest motion state o at the highest position to which the wafer motion module 1 moves within a rotation cycle, and the current state may be the lowest motion state p at the lowest position to which the wafer motion module 1 moves within a rotation cycle. Among them, the incident point a' of the detection laser 3 when the wafer motion module 1 is in the highest motion state o may be the center point of the wafer motion module 1. The second distance may be the moving distance of the reflected laser 4 on the position detection module 2 when the wafer motion module 1 moves from the highest motion state o to the lowest state p.

[0115] S430, calculating the amplitude of the wafer motion module according to the first angle, the second angle, and the second distance.

[0116] Specifically, the amplitude h0 can be the height difference between the incident position b' of the detection laser 3 in the current state of the wafer motion module 1 and the incident position a' in the initial state in the first direction Y. The amplitude of the wafer motion module 1 can be calculated by substituting the first angle, the second angle and the second distance into the height difference formula.

[0117] In the embodiment of the present invention, the first angle between the detection laser and the wafer motion module and the second angle between the reflected laser and the position detection module are first obtained, and then the second distance that the reflected laser moves on the position detection module during the rotation of the wafer motion module is obtained, and the amplitude of the wafer motion module is further calculated based on the first angle, the second angle and the second distance. The amplitude of the wafer is calculated simply and efficiently, so that the staff can calibrate the wafer motion module, and further improve the strength of the detection signal during the wafer detection process.

[0118] Fig. 9 4 is a schematic diagram of the structure of a second wafer inspection system provided according to an embodiment of the present invention.

[0119] like Fig. 9 As shown, the wafer detection system further includes a shaping module 5 and an adjustment module 6; the shaping module 5 is arranged on the optical path between the wafer motion module 1 and the position detection module 2, and is used to receive the reflected laser 4 generated by the wafer motion module 1, adjust the propagation direction of the reflected laser 4, and propagate it to the position detection module 2. The adjustment module 6 is arranged on the optical path between the laser light source 7 and the wafer motion module 1, and is used to receive the detection laser 3, adjust the propagation path of the detection laser 3, and propagate it to the wafer motion module 1.

[0120] Alternatively, if Fig. 9As shown, the wafer detection system further includes a pinhole aperture 8 and an attenuation unit 9. The pinhole aperture 8 is disposed on the optical path between the adjustment module 6 and the laser light source 7. On the one hand, the pinhole aperture 8 can effectively limit the divergence angle of the detection laser 3 to improve the collimation and directionality of the detection laser 3. On the other hand, the detection laser 3 emitted by the laser contains some unnecessary stray light, and the pinhole aperture 8 can improve the purity and quality of the light beam by blocking the stray light.

[0121] It is understandable that if Fig. 9 As shown, high-power laser has extremely high energy density, and such energy will cause irreversible damage to the position detection module 2 if it acts directly on it. Therefore, the attenuation unit 9 is arranged on the optical path between the shaping module 5 and the position detection module 2, and the attenuation unit 9 can reduce the power of the reflected laser 4, thereby protecting the position detection module 2.

[0122] Fig.10 Schematic diagram of the structure of a wafer motion module provided according to an embodiment of the present invention. Figure 1 As shown, the wafer motion module 1 further includes a motion carrier 11, and the motion carrier 11 is used to drive the wafer 12 to perform horizontal motion and rotational motion.

[0123] Fig.11 1 is a schematic diagram of the structure of a detection device based on a wafer detection system provided according to an embodiment of the present invention. Figure 1 As shown, the wafer detection system includes: a laser light source, a wafer movement module 1 and a position detection module 2;

[0124] The laser light source is used to emit a detection laser 3; the wafer motion module 1 is used to reflect the detection laser 3 to generate a reflected laser 4; the position detection module 2 is used to receive the reflected laser 4;

[0125] The detection device includes:

[0126] An angle acquisition module 510, used to acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module;

[0127] The moving distance acquisition module 520 is used to acquire the moving distance of the reflected laser on the position detection module when the wafer motion module moves;

[0128] The calculation module 530 is used to calculate the motion state parameters of the wafer motion module according to the first angle, the second angle and the moving distance; the motion state parameters include the tilt angle and the amplitude.

[0129] The detection device based on the wafer detection system provided in the embodiment of the present invention can execute the detection method based on the wafer detection system provided in any embodiment of the present invention, and has the corresponding functional modules and beneficial effects of the execution method.

[0130] Fig.12 It is a structural diagram of a detection device provided according to an embodiment of the present invention. The detection device is intended to represent various forms of digital computers, such as laptop computers, desktop computers, workbenches, personal digital assistants, servers, blade servers, mainframe computers, and other suitable computers. The detection device can also represent various forms of mobile devices, such as personal digital processing, cellular phones, smart phones, wearable devices (such as helmets, glasses, watches, etc.) and other similar computing devices. The components shown herein, their connections and relationships, and their functions are only examples and are not intended to limit the implementation of the present invention described and / or required herein.

[0131] like Fig.12 As shown, the detection device 60 includes at least one processor 61, and a memory connected to the at least one processor 61, such as a read-only memory (ROM) 62, a random access memory (RAM) 63, etc., wherein the memory stores a computer program that can be executed by at least one processor, and the processor 61 can perform various appropriate actions and processes according to the computer program stored in the read-only memory (ROM) 62 or the computer program loaded from the storage unit 68 to the random access memory (RAM) 63. In the RAM 63, various programs and data required for the operation of the detection device 60 can also be stored. The processor 61, ROM 62 and RAM 63 are connected to each other via a bus 64. An input / output (I / O) interface 65 is also connected to the bus 64.

[0132] A number of components in the detection device 60 are connected to the I / O interface 65, including: an input unit 66, such as a keyboard, a mouse, etc.; an output unit 67, such as various types of displays, speakers, etc.; a storage unit 68, such as a disk, an optical disk, etc.; and a communication unit 69, such as a network card, a modem, a wireless communication transceiver, etc. The communication unit 69 allows the detection device 60 to exchange information / data with other devices through a computer network such as the Internet and / or various telecommunication networks.

[0133] The processor 61 may be a variety of general and / or special processing components with processing and computing capabilities. Some examples of the processor 61 include, but are not limited to, a central processing unit (CPU), a graphics processing unit (GPU), various dedicated artificial intelligence (AI) computing chips, various processors running machine learning model algorithms, digital signal processors (DSPs), and any appropriate processors, controllers, microcontrollers, etc. The processor 61 performs the various methods and processes described above, such as the detection method.

[0134] In some embodiments, the detection method can be implemented as a computer program, which is tangibly contained in a computer-readable storage medium, such as a storage unit 68. In some embodiments, part or all of the computer program can be loaded and / or installed on the detection device 60 via the ROM 62 and / or the communication unit 69. When the computer program is loaded into the RAM 63 and executed by the processor 61, one or more steps of the detection method described above can be performed. Alternatively, in other embodiments, the processor 61 can be configured to perform the detection method in any other suitable manner (e.g., by means of firmware).

[0135] Various implementations of the systems and techniques described above herein can be implemented in digital electronic circuit systems, integrated circuit systems, field programmable gate arrays (FPGAs), application specific integrated circuits (ASICs), application specific standard products (ASSPs), systems on chips (SOCs), load programmable logic devices (CPLDs), computer hardware, firmware, software, and / or combinations thereof. These various implementations can include: being implemented in one or more computer programs that can be executed and / or interpreted on a programmable system including at least one programmable processor, which can be a special purpose or general purpose programmable processor that can receive data and instructions from a storage system, at least one input device, and at least one output device, and transmit data and instructions to the storage system, the at least one input device, and the at least one output device.

[0136] Computer programs for implementing the methods of the present invention may be written in any combination of one or more programming languages. These computer programs may be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device, so that when the computer program is executed by the processor, the functions / operations specified in the flow chart and / or block diagram are implemented. The computer program may be executed entirely on the machine, partially on the machine, partially on the machine and partially on a remote machine as a stand-alone software package, or entirely on a remote machine or server.

[0137] In the context of the present invention, a computer-readable storage medium may be a tangible medium that may contain or store a computer program for use by or in combination with an instruction execution system, device or equipment. A computer-readable storage medium may include, but is not limited to, electronic, magnetic, optical, electromagnetic, infrared, or semiconductor systems, devices or equipment, or any suitable combination of the foregoing. Alternatively, a computer-readable storage medium may be a machine-readable signal medium. A more specific example of a machine-readable storage medium may include an electrical connection based on one or more lines, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.

[0138] To provide interaction with a user, the systems and techniques described herein may be implemented on a detection device having: a display device (e.g., a CRT (cathode ray tube) or LCD (liquid crystal display) monitor) for displaying information to the user; and a keyboard and pointing device (e.g., a mouse or trackball) through which the user can provide input to the detection device. Other types of devices may also be used to provide interaction with the user; for example, the feedback provided to the user may be any form of sensory feedback (e.g., visual feedback, auditory feedback, or tactile feedback); and input from the user may be received in any form (including acoustic input, voice input, or tactile input).

[0139] The systems and techniques described herein may be implemented in a computing system that includes backend components (e.g., as a data server), or a computing system that includes middleware components (e.g., an application server), or a computing system that includes frontend components (e.g., a user computer with a graphical user interface or a web browser through which a user can interact with implementations of the systems and techniques described herein), or a computing system that includes any combination of such backend components, middleware components, or frontend components. The components of the system may be interconnected by any form or medium of digital data communication (e.g., a communication network). Examples of communication networks include: a local area network (LAN), a wide area network (WAN), a blockchain network, and the Internet.

[0140] A computing system may include a client and a server. The client and the server are generally remote from each other and usually interact through a communication network. The client and server relationship is generated by computer programs running on the corresponding computers and having a client-server relationship with each other. The server may be a cloud server, also known as a cloud computing server or cloud host, which is a host product in the cloud computing service system to solve the defects of difficult management and weak business scalability in traditional physical hosts and VPS services.

[0141] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0142] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A detection method based on a wafer detection system, characterized in that: The wafer detection system includes: a laser light source, a wafer movement module and a position detection module; The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser; The detection method comprises: Acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module; Acquire the moving distance of the reflected laser on the position detection module when the wafer motion module moves; The motion state parameters of the wafer motion module are calculated according to the first angle, the second angle and the moving distance; the motion state parameters include a tilt angle and an amplitude.

2. The detection method according to claim 1, characterized in that: Acquiring the moving distance of the reflected laser on the position detection module when the wafer motion module moves, comprising: Acquire a first distance set of the reflected laser moving on the position detection module when the wafer motion module moves horizontally multiple times at preset intervals; wherein the horizontal movement includes the wafer motion module moving closer to or away from the position detection module; and the first distance set includes a plurality of first distance element values; Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes: The tilt angle of the wafer motion module is calculated according to the first angle, the second angle and the first distance set.

3. The detection method according to claim 2, characterized in that: Calculating the tilt angle of the wafer motion module according to the first angle, the second angle, and the first distance set includes: A first height difference set is determined according to the first angle, the second angle and the first distance set; the first height difference set includes a plurality of first height difference element values, and the first height difference element value corresponds to the first distance element value; the first height difference element value refers to the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state; Acquire a horizontal movement distance set; the horizontal movement distance set includes a plurality of horizontal movement distance element values; the horizontal movement distance element value refers to a first distance difference between an intersection position between the wafer movement module and a preset plane and an incident position of the detection laser on the wafer movement module in a second direction in any movement state; the second direction intersects with the first direction; The tilt angle is determined according to the first height difference set and the horizontal movement distance set.

4. The detection method according to claim 3, characterized in that: Get the horizontal movement distance set including: Determine a second distance difference in the second direction between an incident position of the detection laser in a current state of the wafer motion module and an incident position in an initial state; Determine a horizontal motion distance element value according to the second distance difference and the preset interval; A set of multiple horizontal movement distance element values ​​determined by the wafer movement module performing multiple horizontal movements at preset intervals is used as the horizontal movement distance set.

5. The detection method according to claim 3, characterized in that: Determining the tilt angle according to the first height difference set and the horizontal movement distance set includes: Determine a tilt angle set according to the first height difference set and the horizontal movement distance set; the tilt angle set includes a plurality of tilt angle element values, and the tilt angle element values ​​correspond to the first height difference element values ​​and the horizontal movement distance element values; The tilt angle is determined according to an average value of a plurality of tilt angle element values.

6. The detection method according to claim 1, characterized in that: Acquiring the moving distance of the reflected laser on the position detection module when the wafer motion module moves, comprising: Acquire a second distance moved by the reflected laser on the position detection module during the rotation of the wafer motion module; Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes: The amplitude of the wafer motion module is calculated according to the first angle, the second angle, and the second distance.

7. The detection method according to claim 1, characterized in that: Calculating the motion state parameters of the wafer motion module according to the first angle, the second angle, and the moving distance includes: Calculate the motion state parameters of the wafer motion module according to the following height difference formula; Among them, h represents the height difference in the first direction between the incident position of the detection laser in the current state of the wafer motion module and the incident position in the initial state, D represents the moving distance of the reflected laser on the position detection module, θ1 represents the first angle, and θ2 represents the second angle.

8. A detection device based on a wafer detection system, characterized in that: The wafer detection system includes: a laser light source, a wafer movement module and a position detection module; The laser light source is used to emit a detection laser; the wafer motion module is used to reflect the detection laser to generate a reflected laser; the position detection module is used to receive the reflected laser; The detection device comprises: An angle acquisition module, used to acquire a first angle between the detection laser and the wafer motion module and a second angle between the reflected laser and the position detection module; A moving distance acquisition module, used for acquiring the moving distance of the reflected laser on the position detection module when the wafer movement module moves; A calculation module is used to calculate the motion state parameters of the wafer motion module according to the first angle, the second angle and the moving distance; the motion state parameters include a tilt angle and an amplitude.

9. A detection device, characterized in that: The detection equipment comprises: one or more processors; a storage device for storing one or more programs, When the one or more programs are executed by the one or more processors, the one or more processors implement the detection method as described in any one of claims 1 to 7.

10. A storage medium having a computer program stored thereon, characterized in that: When the program is executed by a processor, the detection method as described in any one of claims 1 to 7 is implemented.

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