Silicon carbide wafer defect detection method
By using multiple excitation lasers of different wavelengths for photoluminescence testing, combined with the penetration depth of the excitation laser, a three-dimensional defect model of silicon carbide wafer is constructed, which solves the problem that the defect start point cannot be determined in the prior art and achieves more accurate defect detection.
CN119643564APending Publication Date: 2025-03-18DONGGUAN TIANYU SEMICON TECH
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Patent Information
- Application Number
- CN202411982505.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-03-18
AI Technical Summary
Technical Problem
The existing photoluminescence testing methods use a single excitation laser light source, which cannot regulate the imaging depth, resulting in the initiation point of the silicon carbide wafer defect.
Method used
The silicon carbide wafer was irradiated with N different wavelengths of excitation lasers, and photoluminescent images of each wavelength were taken, and the three-dimensional defect model of the silicon carbide wafer was constructed based on the penetration depth of the excitation laser.
Benefits of technology
Through the three-dimensional defect model, the start position, end position and shape of the silicon carbide wafer defect are clearly obtained, improving the accuracy and reliability of defect detection.
✦ Generated by Eureka AI based on patent content.
Abstract
The invention discloses a silicon carbide wafer defect detection method which is characterized by comprising the following steps: providing a silicon carbide wafer; n excitation lasers with different wavelengths are adopted to irradiate the silicon carbide wafer for photoluminescence, photoluminescence images generated when the excitation laser with each wavelength irradiates the silicon carbide wafer are shot, and N is larger than or equal to 5; and obtaining a three-dimensional defect model of the silicon carbide wafer through the obtained photoluminescence image and the penetration depth of the excitation laser corresponding to the photoluminescence image. The method comprises the following steps: irradiating a silicon carbide wafer by adopting excitation laser with different wavelengths to obtain a photoluminescence image, and obtaining a three-dimensional defect model of the silicon carbide wafer according to the obtained photoluminescence image and the penetration depth of the excitation laser corresponding to the photoluminescence image. Therefore, the starting position, the ending position and the shape of the defect of the silicon carbide wafer can be clearly obtained, and the method is ingenious.
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