Error correction method and device of NAND FLASH controller and flash memory
By setting up three error correction modules in the NAND FLASH controller and dynamically adjusting the error correction module used according to the number of erases of the storage module, the poor adaptability problem caused by the fixed configuration of the error correction module in the prior art is solved, and a lower data error rate and higher adaptability are achieved.
Patent Information
- Application Number
- CN202411727691.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-28
- Publication Date
- 2025-03-18
AI Technical Summary
In the error correction method of the existing NAND FLASH controller, the error correction module is fixedly configured and cannot be dynamically adjusted, resulting in poor adaptability and cannot effectively deal with the increase in the error rate of the storage module.
Three error correction modules are set up inside the controller, and the error correction module used is dynamically adjusted according to the current number of erases of the storage module, and the appropriate error correction module is selected to encode and decode the data.
By dynamically adjusting the error correction module, the error rate of data is reduced, the adaptability of the controller is improved, the security and integrity of the data are ensured, and the accuracy of data is ensured in extreme temperature environments.