Admittance test method of resonator and resonator

Abstract

The invention provides an admittance test method of a resonator and the resonator, and the test method comprises the following steps: obtaining a scattering parameter matrix file of the resonator to be tested; constructing a principle circuit of a real resonator according to the scattering parameter matrix file; a parasitic effect is added to the real resonator; deriving according to the principle circuit to obtain an equation of scattering parameters of a real resonator; and calculating the admittance parameter of the real resonator through the equation so as to design the real resonator. The admittance test method of the resonator is low in cost and can obtain more accurate admittance parameters.

Description

Technical Field

[0001] The invention relates to the technical field of surface acoustic wave devices, and in particular to an admittance testing method of a resonator and a resonator. Background Art

[0002] Surface acoustic wave devices have the advantages of small size, low noise, low loss, high performance, good stability and compatible manufacturing process. They have been widely used in medicine, telemetry technology, communications and other fields.

[0003] Surface acoustic wave devices are mainly composed of piezoelectric substrates and metal structures. With the development of radio frequency technology, surface acoustic wave filters are constantly developing towards high quality factors, high electromechanical coupling coefficients, and high frequencies. In the product development process, high-quality iterations can not only gain an advantage but also reduce costs, and improving the accuracy of test data is an important way to achieve high-quality iterations.

[0004] The data test of surface acoustic wave devices mainly relies on probe testing, and the probe test admittance contains the parasitic effects produced by the metal structure around the ground, which will cause the test admittance to differ from the actual device admittance.

[0005] As a kind of surface acoustic wave device, the existing technology for removing parasitic effects of resonators during admittance testing requires designing a de-embedding structure for resonators of different structures and taping out the structure together with the resonator, which results in a high cost for the testing method. Summary of the invention

[0006] In view of the above shortcomings of the prior art, the present invention proposes a method for testing the admittance of a resonator and a resonator to solve the problem of high cost in the prior art method of testing the admittance of a resonator using a probe.

[0007] In order to solve the above technical problems, the present invention adopts the following technical solutions: In a first aspect, the present invention provides a method for testing the admittance of a resonator, which comprises the following steps: Obtain a scattering parameter matrix file of the resonator to be tested; Constructing a principle circuit of a real resonator according to the scattering parameter matrix file; the real resonator is additionally provided with parasitic effects; The equation for the scattering parameter of the real resonator is derived based on the principle circuit; The admittance parameter of the real resonator is calculated by the equation to be used for designing the real resonator.

[0008] Preferably, obtaining the scattering parameter matrix file of the resonator to be tested comprises the following sub-steps: An electromagnetic simulation model of a resonator to be tested is established according to the layout of a real resonator; the resonator to be tested includes a bus bar that generates parasitic effects, a ground port, an input port, an output port, and a simulation port; The electromagnetic simulation model is swept according to the working frequency band of the real resonator to obtain the scattering parameter matrix file; the scattering parameter matrix file is an *.s3p file of the input port, output port and simulation port of the resonator to be tested, and the *.s3p file includes scattering parameters of different frequencies.

[0009] Preferably, constructing a principle circuit including a real resonator according to the scattering parameter matrix file comprises the following sub-steps: Placing the real resonator at the simulation port of the resonator to be tested; The schematic circuit is constructed according to the *.s3p file and the input port of the real resonator and the output port of the real resonator.

[0010] Preferably, the step of deriving an equation for the scattering parameters of the real resonator according to the principle circuit is specifically: deriving the equation according to the parasitic effect of the real resonator and the relationship between the input of the principle circuit and the output of the principle circuit.

[0011] Preferably, calculating the admittance parameter of the real resonator by the equation comprises the following sub-steps: The calculation formula of the scattering parameters of the real resonator is derived by the equation; Calculate the scattering parameters of the real resonator according to the calculation formula; The scattering parameters of the real resonator are converted into admittance parameters of the real resonator.

[0012] Preferably, after the admittance parameter of the real resonator is calculated by the equation, the method further comprises the following step: programming the calculation formula to obtain a calculation program.

[0013] Preferably, calculating the admittance parameter of the real resonator by the equation comprises the following sub-steps: Solving the equations using numerical methods to obtain scattering parameters of the real resonator; The scattering parameters of the real resonator are converted into admittance parameters of the real resonator.

[0014] Preferably, after the admittance parameter of the real resonator is calculated by the equation, the method further comprises the following step: programming the numerical method to obtain a calculation program.

[0015] In a second aspect, the present invention provides a resonator, wherein the admittance parameters of the resonator are obtained according to the admittance testing method of the resonator as described above.

[0016] Compared with the prior art, the admittance test method of the resonator in the present invention sequentially obtains a scattering parameter matrix file of the resonator to be tested, constructs a principle circuit of a real resonator according to the scattering parameter matrix file, derives an equation of the scattering parameter of the real resonator according to the principle circuit, and calculates the admittance parameter of the real resonator through the equation to design the resonator. This test method has low cost because it does not require the design of a de-embedding structure and tape-out. In addition, this test method uses simulation technology to simulate additional metal structures other than the resonator, and uses mathematical methods to remove the parasitic effects generated by the additional metal structures, so that more accurate admittance parameters can be obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present invention will be described in detail below in conjunction with the accompanying drawings. The above and other aspects of the present invention will become clearer and easier to understand through the detailed description made in conjunction with the following drawings. In the accompanying drawings: Figure 1 A flow chart of the steps of the admittance test method of a resonator provided in an embodiment of the present invention; Figure 2 A layout of a resonator to be tested provided in an embodiment of the present invention; Figure 3 A principle circuit diagram of the additional parasitic effect of a real resonator provided by an embodiment of the present invention; Figure 4 A schematic diagram showing a comparison of admittance parameters of a resonator to be tested before and after parasitic effects are removed provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0018] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by technicians in the technical field of the present application; the terms used in the specification of the application herein are only for the purpose of describing specific embodiments and are not intended to limit the present application; the terms "including" and "having" and any variations thereof in the specification and claims of the present application and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of the present application or the above-mentioned drawings are used to distinguish different objects, not to describe a specific order.

[0019] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0020] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] Embodiment 1 The embodiment of the present invention provides a method for testing the admittance of a resonator. Figure 1 As shown, it includes the following steps: S1. Obtain the scattering parameter matrix file of the resonator to be tested.

[0022] Wherein, obtaining the scattering parameter matrix file of the resonator to be tested includes the following sub-steps: S11. Establish an electromagnetic simulation model of the resonator to be tested according to the layout of the real resonator.

[0023] like Figure 2 As shown, the layout of the resonator to be tested includes a bus bar 1 (metal layer) generating parasitic effects, a ground port 2, an input port 3 (input), an output port 4 (output), and a simulation port 5.

[0024] S12. Sweeping the electromagnetic simulation model according to the working frequency band of the real resonator to obtain the scattering parameter matrix file.

[0025] The scattering parameter matrix file is an *.s3p file of the input port, output port and simulation port of the resonator to be tested (data obtained from the simulation results), and the *.s3p file includes scattering parameters (S parameters) of different frequencies.

[0026] There are multiple operating frequency bands, 0-5GHz is one of them.

[0027] S2. Construct a principle circuit of a real resonator according to the scattering parameter matrix file.

[0028] The real resonator is supplemented with the parasitic effect of the resonator to be tested.

[0029] Constructing a principle circuit containing a real resonator according to the scattering parameter matrix file includes the following sub-steps: S21, placing the real resonator at the simulation port of the resonator to be tested.

[0030] After the real resonator is placed on the simulation port of the resonator to be tested, that is, the input port of the real resonator is connected to the simulation port of the resonator to be tested, and the output port of the real resonator is grounded, it is equivalent to that the real resonator does not include a bus bar, a ground port, an input port, an output port, and a simulation port, etc.

[0031] S22. Construct the schematic circuit according to the *.s3p file and the input port of the real resonator and the output port of the real resonator.

[0032] S3. Derivation of the equation of the scattering parameter of the real resonator based on the principle circuit.

[0033] The step of deriving the equation of the scattering parameter of the real resonator according to the principle circuit is specifically: deriving the equation according to the parasitic effect of the real resonator and the relationship between the input of the principle circuit and the output of the principle circuit.

[0034] The parasitic effect of the real resonator is the parasitic effect of the resonator to be tested, which is equivalent to the scattering parameter of the resonator to be tested.

[0035] S4. Calculate the admittance parameters of the real resonator using the equation.

[0036] After the admittance parameters of the real resonator are obtained, they can be used to design the real resonator.

[0037] Calculating the admittance parameters of the real resonator by the equation includes the following sub-steps: S41. Derivation of a calculation formula for the scattering parameters of the real resonator through the equation.

[0038] The calculation formula is also called the analytical solution.

[0039] S42. Calculate the scattering parameters of the real resonator according to the calculation formula.

[0040] S43, converting the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0041] When converting the scattering parameters of the real resonator into the admittance parameters of the real resonator, the conversion can be performed through an open source package because the scattering parameters of the real resonator and the admittance parameters of the real resonator are interchangeable.

[0042] After the admittance parameter of the real resonator is calculated by the equation, the following step is also included: programming the calculation formula to obtain a calculation program. After obtaining the calculation program, it is convenient to directly use the calculation program to obtain the admittance parameter of the real resonator when designing the real resonator later.

[0043] Another method for calculating the admittance parameters of a real resonator by the above equations includes the following sub-steps: S411. Solve the equation using a numerical method to obtain the scattering parameters of the real resonator.

[0044] S412: Convert the scattering parameters of the real resonator into the admittance parameters of the real resonator.

[0045] Correspondingly, after the admittance parameter of the real resonator is calculated by the equation, the following step is also included: programming the calculation formula to obtain a calculation program.

[0046] The principle circuit of the real resonator additional parasitic effect in this embodiment is as follows: Figure 3 As shown, the input port 3 and output port 4 of the resonator to be tested, the battery simulation model 8 and the real resonator 9; according to the principle circuit and the scattering parameters, the equation group of the scattering parameters of the real resonator can be derived as shown below: ; ; ; .

[0047] Among them, A11, A12, A21, and A22 are the scattering parameters of the resonator to be tested, sij (i=1, 2, 3, j=1, , 2, 3) is the scattering parameter matrix file after electromagnetic simulation, and s44, s45, s54, and s55 are the scattering parameters of the real resonator or the ideal resonator.

[0048] The numerical method is used to solve s44, s45, s54, and s55, and the results are converted into admittance parameters, such as Figure 4 shown.

[0049] Compared with the prior art, the admittance test method of the resonator in this embodiment obtains the scattering parameter matrix file of the resonator to be tested, constructs the principle circuit of the real resonator according to the scattering parameter matrix file, derives the equation of the scattering parameter of the real resonator according to the principle circuit, and calculates the admittance parameter of the real resonator through the equation. This test method is low in cost because it does not require the design of de-embedding structure and tape-out. In addition, this test method uses simulation technology to simulate additional metal structures other than the resonator, and uses mathematical methods to remove the parasitic effects caused by the additional metal structures, so that more accurate admittance parameters can be obtained.

[0050] Embodiment 2 This embodiment provides a resonator, and the admittance parameters of the resonator are obtained according to the admittance testing method of the resonator in the first embodiment above.

[0051] Since the admittance parameters of the resonator in this embodiment are obtained according to the admittance testing method of the resonator in the above-mentioned embodiment 1, it can also achieve the technical effect achieved by the admittance testing method of the resonator in the above-mentioned embodiment 1, and will not be elaborated here.

[0052] It should be noted that the various embodiments described above with reference to the accompanying drawings are only used to illustrate the present invention rather than to limit the scope of the present invention. Those skilled in the art should understand that any modification or equivalent substitution of the present invention without departing from the spirit and scope of the present invention should be included within the scope of the present invention. In addition, unless otherwise indicated by the context, words appearing in the singular include the plural form, and vice versa. In addition, unless otherwise specified, all or part of any embodiment may be used in combination with all or part of any other embodiment.

Claims

1. A method for measuring the admittance of a resonator, characterized in that: The admittance test method of the resonator comprises the following steps: Obtain a scattering parameter matrix file of the resonator to be tested; Constructing a principle circuit of a real resonator according to the scattering parameter matrix file; the real resonator is additionally provided with parasitic effects; The equation for the scattering parameter of the real resonator is derived based on the principle circuit; The admittance parameter of the real resonator is calculated by the equation to be used for designing the real resonator.

2. The method for measuring the admittance of a resonator according to claim 1, wherein: Obtaining the scattering parameter matrix file of the resonator to be tested includes the following sub-steps: An electromagnetic simulation model of a resonator to be tested is established according to the layout of a real resonator; the resonator to be tested includes a bus bar that generates parasitic effects, a ground port, an input port, an output port, and a simulation port; Sweeping the electromagnetic simulation model according to the working frequency band of the real resonator to obtain the scattering parameter matrix file; The scattering parameter matrix file is an *.s3p file of the input port, the output port and the simulation port of the resonator to be tested, and the *.s3p file includes scattering parameters of different frequencies.

3. The method for measuring the admittance of a resonator according to claim 2, wherein: Constructing a principle circuit containing a real resonator according to the scattering parameter matrix file includes the following sub-steps: Placing the real resonator at the simulation port of the resonator to be tested; The schematic circuit is constructed according to the *.s3p file and the input port of the real resonator and the output port of the real resonator.

4. The method for measuring the admittance of a resonator according to claim 1, wherein: The step of deriving the equation of the scattering parameter of the real resonator according to the principle circuit is specifically: deriving the equation according to the parasitic effect of the real resonator and the input and output relationship of the principle circuit.

5. The method for measuring the admittance of a resonator according to claim 1, wherein: Calculating the admittance parameters of the real resonator by the equation includes the following sub-steps: The calculation formula of the scattering parameters of the real resonator is derived by the equation; Calculate the scattering parameters of the real resonator according to the calculation formula; The scattering parameters of the real resonator are converted into admittance parameters of the real resonator.

6. The method for measuring the admittance of a resonator according to claim 5, wherein: After the admittance parameters of the real resonator are calculated by the equation, the following steps are also included: The calculation formula is programmed to obtain a calculation program.

7. The method for measuring the admittance of a resonator according to claim 1, wherein: The method of calculating the admittance parameters of the real resonator by the equation includes the following sub-steps: Solving the equations using numerical methods to obtain scattering parameters of the real resonator; The scattering parameters of the real resonator are converted into admittance parameters of the real resonator.

8. The method for measuring the admittance of a resonator according to claim 7, wherein: The method calculates the admittance parameters of the real resonator by using the equation, and further includes the following steps: programming the numerical method to obtain a calculation program.

9. A resonator, characterized in that: The admittance parameter of the resonator is obtained according to the admittance testing method of the resonator according to any one of claims 1 to 8.

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