Full-color Micro-LED stacking structure and method
Through the vertical stacking of red, green and blue micro-LED chips and transparent driver circuits, the problem of limited pixel density and high-resolution application potential of existing Micro-LED displays is solved, and higher pixel density and display performance are achieved.
Patent Information
- Application Number
- CN202510004405.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-02
- Publication Date
- 2025-03-18
AI Technical Summary
When existing Micro-LED displays realize full color display, the pixel points are composed of four monochrome Micro-LED devices, resulting in a larger size of each pixel, limiting the pixel density and high-resolution application potential of the display device.
The new stacking structure design is adopted, and the red, green and blue micro-LED chips are stacked vertically, and transparent materials are used on each driving circuit to ensure that light passes through does not affect optical performance. At the same time, each Micro-LED device obtains independent power control.
It significantly reduces the area of full-color pixel points, improves pixel density, and improves the response speed, contrast and power consumption efficiency of the display. It is suitable for high-resolution and miniaturized display devices.
Smart Images

Figure CN119649745A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of Micro-LED display, and in particular to a full-color Micro-LED stacking structure and method. Background Art
[0002] With the continuous advancement of display technology, Micro-LED has emerged in the new generation of display devices with its excellent performance. Due to the many advantages of Micro-LED display devices, including high efficiency, high brightness, high reliability, energy saving and miniaturization, it has become an important display technology that will be widely used in consumer electronics, wearable devices, car displays and augmented reality (AR) / virtual reality (VR) devices in the future. Compared with traditional OLED and LCD display technologies, Micro-LED has significant advantages in brightness, contrast, response time and power consumption, especially in areas such as visibility in sunlight, picture life and color saturation. It has unique competitiveness.
[0003] In order to achieve full-color display of Micro-LED displays, precise integration of red, green and blue (RGB) Micro-LED chips is required. The current mainstream pixel arrangement is blue-green-green-red (BGRG). This structure means that each full-color pixel is composed of four monochrome Micro-LED devices. Even though the size of Micro-LED devices is extremely small, considering the composition of full-color pixels, the size of each pixel still far exceeds the area of a single device, thus reducing the pixel density (PPI) of the display device and limiting the application potential of Micro-LED in high-resolution scenarios.
[0004] Therefore, those skilled in the art are committed to developing a full-color Micro-LED stacking structure and method. Summary of the invention
[0005] In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is to provide a full-color Micro-LED stacking structure and method.
[0006] To achieve the above-mentioned objectives, the present invention provides a full-color Micro-LED stacking structure, including a first driving circuit, to which a first chip is connected; a second driving circuit is provided on a side of the first chip away from the first driving circuit, to which a second chip is connected; a third driving circuit is provided on a side of the second chip away from the second driving circuit, to which a third chip is connected.
[0007] Preferably, a first insulating layer is provided between the first chip and the second drive circuit. By providing the first insulating layer, the first chip and the first drive circuit and the second chip and the second drive circuit respectively form independent sets to prevent a short circuit between the two.
[0008] Preferably, a second insulating layer is provided between the second chip and the third driving circuit. By providing the second insulating layer, the second chip and the second driving circuit and the third chip and the third driving circuit form independent sets respectively, thereby preventing the two from short-circuiting.
[0009] Preferably, the first insulating layer and the second insulating layer are both made of silicon dioxide.
[0010] Preferably, the first chip is a red light chip, the second chip is a green light chip, and the third chip is a blue light chip, and the three are stacked vertically in order of wavelength. This stacking method avoids the excitation effect of high-energy photons on low-energy photons, thereby effectively preventing light crosstalk and ensuring the purity of displayed colors.
[0011] Preferably, the first drive circuit, the second drive circuit and the third drive circuit are all made of transparent materials. This design not only provides effective electrical control, but also ensures that light can pass through, thereby not affecting the optical performance of the Micro-LED device. The integration of the transparent active drive circuit enables each Micro-LED device to obtain independent power control, further improving the response speed, contrast and power consumption efficiency of the display.
[0012] Preferably, the first chip, the second chip and the third chip are all flip-chip mounted.
[0013] The present invention also provides a full-color Micro-LED stacking method, comprising the following steps:
[0014] S1. Using semiconductor technology to manufacture a first chip, a second chip, and a third chip respectively;
[0015] S2. Use flip-chip welding to connect the first chip to the first drive circuit, the second chip to the second drive circuit, and the third chip to the third drive circuit, so that each drive circuit and each chip form an independent integrated structure.
[0016] S3, placing the second driving circuit on top of the first chip and insulating the first chip from the second driving circuit;
[0017] S4, placing the third driving circuit on top of the second chip and insulating the second chip and the third driving circuit.
[0018] Preferably, in step S1 , the first chip, the second chip and the third chip are all flip-chip structures.
[0019] Preferably, in step S2, the first chip is a red light chip, the second chip is a green light chip, and the third chip is a blue light chip.
[0020] The beneficial effects of the present invention are:
[0021] 1) The present invention adopts a new structural design to greatly reduce the area of full-color Micro-LED and significantly reduce the excitation effect between photons of different colors, ensuring the color purity and image quality stability of the display.
[0022] 2) Each Micro-LED device has independent power control, which further improves the display's response speed, contrast, and power efficiency, allowing each LED to have independent power control.
[0023] 3) The chip and the driving circuit are directly stacked after integration, which simplifies the overall structural design, improves the integration of the display device, reduces the size, and is suitable for high-resolution and miniaturized display devices, with great market promotion value. BRIEF DESCRIPTION OF THE DRAWINGS
[0024] Figure 1 It is a structural schematic diagram of a specific implementation mode of the present invention.
[0025] 11. First drive circuit; 12. First chip; 13. First electrode sheet; 21. Second drive circuit; 22. Second chip; 23. Second electrode sheet; 31. Third drive circuit; 32. Third chip; 33. Third electrode sheet; 4. First insulating layer; 5. Second insulating layer. DETAILED DESCRIPTION
[0026] The present invention is further described below in conjunction with the accompanying drawings and embodiments. It should be noted that in the description of the present invention, the terms "upper", "lower", "left", "right", "inner", "outer", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific manner, and therefore cannot be understood as limiting the present invention. The terms "first", "second", "third", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.
[0027] like Figure 1 As shown, a full-color Micro-LED stacking structure includes a first driving circuit 11, to which a first chip 12 is connected. The first chip 12 is connected to the first driving circuit 11 through a first electrode sheet 13, and the remaining parts are insulated to prevent short circuit.
[0028] A first insulating layer 4 is provided on the side of the first chip 12 away from the first drive circuit 11, a second drive circuit 21 is provided on the first insulating layer 4, a second chip 22 is provided on the second drive circuit 21, the second chip 22 is connected to the second drive circuit 21 via a second electrode sheet 23, and the remaining parts are insulated to prevent short circuits. The first insulating layer 4 separates the first chip 12 and the first drive circuit 11 from the second drive circuit 21 and the second chip 22 into two separate sets to prevent short circuits caused by contact with each other.
[0029] A second insulating layer 5 is provided on the side of the second chip 22 away from the second drive circuit 21, a third drive circuit 31 is provided on the side of the second insulating layer 5 away from the second chip 22, a third chip 32 is provided on the third drive circuit 31, the third chip 32 is connected to the third drive circuit 31 through a third electrode sheet 33, and the remaining parts are insulated to prevent short circuit. The second insulating layer 5 separates the second chip 22 and the second drive circuit 21 and the third chip 32 and the third drive circuit 31 into two separate sets to prevent short circuit due to contact with each other.
[0030] The first drive circuit 11, the second drive circuit 21 and the third drive circuit 31 are all made of transparent materials. In this embodiment, the transparent material is indium tin oxide ITO, which not only provides effective electrical control, but also ensures that light can pass through, thereby not affecting the optical performance of the Micro-LED device. The first chip 12 is independently connected to the first drive circuit 11, the second chip 22 is independently connected to the second drive circuit 21, and the third chip 32 is independently connected to the third drive circuit 31. The design of each chip being independently connected to each drive circuit further improves the response speed, contrast and power consumption efficiency of the display, so that each LED has independent power control.
[0031] In this embodiment, the first insulating layer 4, the second insulating layer 5 and other insulating parts are all made of silicon dioxide. In other embodiments, other insulating materials such as polyimide, silicon nitride, aluminum oxide and the like may also be used.
[0032] In this embodiment, the first chip 12 is a red light chip, the second chip 22 is a green light chip, and the third chip 32 is a blue light chip. The first chip 12, the second chip 22 and the third chip 32 are all flip-chip arranged. The stacking order of the first chip 12, the second chip 22 and the third chip 32 is: the first chip 12 is at the bottom layer, the second chip 22 is in the middle, and the third chip 32 is at the top layer. Through this stacking method, the excitation effect of high-energy photons on low-energy photons is avoided, thereby effectively preventing the light crosstalk phenomenon and ensuring the color purity of the display. The present application transforms the traditional planar arrangement method into an up-and-down stacking structure. In this way, the RGB three-color Micro-LED chips can be vertically integrated, thereby reducing the overall pixel occupation area and improving space utilization. The vertical arrangement can not only significantly reduce the area of full-color pixels, but also effectively increase the pixel density of the screen, further enhancing the small size advantage of Micro-LED. This three-dimensional structural design can optimize space allocation and is expected to greatly improve the resolution (PPI) of the display screen, thereby showing better performance in high-precision display scenarios.
[0033] The present invention also provides a full-color Micro-LED stacking method, which specifically includes the following steps:
[0034] S1. The first chip 12, the second chip 22 and the third chip 32 are flip-chip manufactured respectively by using semiconductor technology. In this embodiment, the first chip 12 is a red light chip, the second chip 22 is a green light chip, and the third chip 32 is a blue light chip.
[0035] S2. Use flip-chip welding to connect the first chip 12 and the first drive circuit 11; the second chip 22 and the second drive circuit 21; the third chip 32 and the third drive circuit 31 respectively; so that each drive circuit and each chip form an independent integrated structure.
[0036] S3, placing the second driving circuit 21 on top of the first chip 12 and insulating the first chip 12 from the second driving circuit 21;
[0037] S4, placing the third driving circuit 31 on top of the second chip 22 and insulating the second chip 22 and the third driving circuit 31.
[0038] The preferred specific embodiments of the present invention are described in detail above. It should be understood that a person skilled in the art can make many modifications and changes based on the concept of the present invention without creative work. Therefore, any technical solution that can be obtained by a person skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention on the basis of the prior art should be within the scope of protection determined by the claims.
Claims
1. A full-color Micro-LED stacking structure, characterized by: The invention comprises a first drive circuit (11), to which a first chip (12) is connected; a second drive circuit (21) is provided on a side of the first chip (12) away from the first drive circuit (11), to which a second chip (22) is connected; a third drive circuit (31) is provided on a side of the second chip (22) away from the second drive circuit (21), to which a third chip (32) is connected.
2. The full-color Micro-LED stacking structure according to claim 1, characterized in that: A first insulating layer (4) is provided between the first chip (12) and the second drive circuit (21).
3. The full-color Micro-LED stacking structure as claimed in claim 2, characterized in that: A second insulating layer (5) is provided between the second chip (22) and the third driving circuit (31).
4. The full-color Micro-LED stacking structure as claimed in claim 3, characterized in that: The first insulating layer (4) and the second insulating layer (5) are both made of silicon dioxide.
5. The full-color Micro-LED stacking structure according to claim 1, characterized in that: The first chip (12) is a red light chip, the second chip (22) is a green light chip, and the third chip (32) is a blue light chip.
6. The full-color Micro-LED stacking structure according to claim 1, wherein: The first drive circuit (11), the second drive circuit (21) and the third drive circuit (31) are all made of transparent materials.
7. The full-color Micro-LED stacking structure as claimed in claim 6, characterized in that: The first chip (12), the second chip (22) and the third chip (32) are all flip-chip mounted.
8. A full-color Micro-LED stacking method, characterized in that: The following steps are involved: S1. Using semiconductor technology to manufacture a first chip (12), a second chip (22), and a third chip (32); S2. Using flip-chip welding, the first chip (12) and the first drive circuit (11) are connected; the second chip (22) and the second drive circuit (21) are connected; and the third chip (32) and the third drive circuit (31) are connected, respectively, so that each drive circuit and each chip form an independent integrated structure. S3, placing the second drive circuit (21) on top of the first chip (12) and performing insulation treatment on the first chip (12) and the second drive circuit (21); S4, placing the third driving circuit (31) on top of the second chip (22) and performing insulation treatment on the second chip (22) and the third driving circuit (31).
9. The full-color Micro-LED stacking method according to claim 8, characterized in that: In step S1, the first chip (12), the second chip (22) and the third chip (32) are all flip-chip structures.
10. The full-color Micro-LED stacking method according to claim 8, characterized in that: In step S2, the first chip (12) is a red light chip, the second chip (22) is a green light chip, and the third chip (32) is a blue light chip.
Citation Information
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