Hafnium-based ferroelectric capacitance fatigue effect recovery method, equipment, medium and product

Abstract

The invention discloses a hafnium-based ferroelectric capacitor fatigue effect recovery method and device, a medium and a product, and relates to the technical field of semiconductor devices and integrated circuits, and the method comprises the steps: determining a hybrid recovery pulse sequence; obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory; after the target hafnium-based ferroelectric memory is subjected to read-write operation, acquiring the real-time remanent polarization intensity of the target hafnium-based ferroelectric memory as first remanent polarization intensity; determining whether the target hafnium-based ferroelectric memory is in a fatigue state or not according to the first residual polarization intensity and the initial polarization intensity; when the target hafnium-based ferroelectric memory is in a fatigue state, applying the programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory; according to the scheme of recovering the fatigue effect of the hafnium-based ferroelectric capacitor by using the hybrid recovery pulse sequence, the polarization intensity recovery effect and the durability of the hafnium-based ferroelectric memory can be improved.

Description

Technical Field

[0001] The present application relates to the technical field of semiconductor devices and integrated circuits, and in particular to a method, device, medium and product for recovering fatigue effects of hafnium-based ferroelectric capacitors. Background Art

[0002] Hafnium-based ferroelectric memory is a very competitive new type of non-volatile memory with advantages such as fast read and write speed, low read and write energy consumption, and compatibility with CMOS process. However, due to the fatigue effect of hafnium-based ferroelectric capacitors, that is, the residual polarization intensity of ferroelectric capacitors will gradually decrease with the increase of read and write times, so that the difference in read current of different storage states becomes smaller. This phenomenon makes it difficult to distinguish different storage states, and eventually leads to device failure. This problem greatly limits the application of hafnium-based ferroelectric memory. In order to solve the device failure problem caused by the fatigue effect of hafnium-based ferroelectric capacitors, recovery schemes based on electric pulses have been studied and used. Existing electric pulse recovery schemes usually use bidirectional pulse sequences or unidirectional pulse sequences, and have higher voltage amplitudes than read and write operations. Among them, bidirectional pulses can effectively restore the residual polarization intensity reduced by fatigue effects, but frequent polarization reversals can easily cause dielectric breakdown of hafnium-based ferroelectric capacitors, causing the device to fail completely and irreversibly, so the device durability of ferroelectric capacitors is low. In contrast, unidirectional pulses can extend the dielectric lifetime of hafnium-based ferroelectric capacitors by avoiding polarization reversal, but the recovery effect of the residual polarization strength is very weak. Summary of the invention

[0003] The purpose of the present application is to provide a method, device, medium and product for recovering the fatigue effect of a hafnium-based ferroelectric capacitor, which utilizes a hybrid recovery pulse sequence to recover the fatigue effect of a hafnium-based ferroelectric capacitor, thereby improving the polarization strength recovery effect and the durability of the hafnium-based ferroelectric memory.

[0004] To achieve the above objectives, this application provides the following solutions:

[0005] In a first aspect, the present application provides a method for recovering from fatigue effects of a hafnium-based ferroelectric capacitor, comprising:

[0006] Determine the hybrid recovery pulse sequence;

[0007] Obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory;

[0008] After performing a read and write operation on the target hafnium-based ferroelectric memory, obtaining a real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a first residual polarization intensity;

[0009] Determining whether the target hafnium-based ferroelectric memory is in a fatigue state according to the first remnant polarization intensity and the initial polarization intensity;

[0010] When the target hafnium-based ferroelectric memory is in a fatigue state, a programmed hybrid recovery pulse sequence is applied to the target hafnium-based ferroelectric memory.

[0011] Optionally, after applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory, the method further comprises:

[0012] Acquiring the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a second residual polarization intensity;

[0013] Determine whether the second remanent polarization intensity is equal to the initial polarization intensity to obtain a first determination result;

[0014] If the first judgment result is no, it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has not been restored, and the process returns to the step of "applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory";

[0015] If the first judgment result is yes, it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has been restored, and the process returns to the step of "after performing read and write operations on the target hafnium-based ferroelectric memory, obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the first residual polarization intensity".

[0016] Optionally, before obtaining the target real-time remanent polarization intensity of the hafnium-based ferroelectric memory as the second remanent polarization intensity, the method further includes:

[0017] determining whether the target hafnium-based ferroelectric memory is broken down to obtain a second determination result;

[0018] If the second judgment result is no, executing the step of “obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity”;

[0019] If the second judgment result is yes, the target hafnium-based ferroelectric memory is determined to be failed, and the address of the target hafnium-based ferroelectric memory is marked.

[0020] Optionally, the hybrid recovery pulse sequence includes N pulses; the N pulses are arranged periodically;

[0021] The same cycle includes a positive pulse segment and a negative pulse segment connected in sequence; the positive pulse segment includes k positive pulses connected in sequence; the negative pulse segment includes mk negative pulses connected in sequence; wherein m is the total number of pulses in 1 cycle.

[0022] Optionally, determining the hybrid recovery pulse sequence includes:

[0023] Pulse signals with different reversal ratios are applied to multiple fatigue samples respectively until the corresponding fatigue samples are broken down, and the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the first recovery pulse total number N1; and the total number of pulses applied when each fatigue sample is broken down is counted as the first recovery endurance pulse total number T1; the total number of pulses in a single cycle in the pulse signals with different reversal ratios is different;

[0024] Determine the ratio of the total number of first recovery endurance pulses T1 to the total number of first recovery pulses N1 as the total number of first recovery operations R1;

[0025] Determine the flip ratio corresponding to the maximum total number of first recovery operations R1 as the target flip ratio;

[0026] According to the target flip ratio, the target single-cycle pulse number m is determined using the flip ratio formula;

[0027] Based on the target single-cycle pulse number m, pulse signals of different symmetries are applied to multiple fatigue samples respectively until the corresponding fatigue samples are broken down, and the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the second recovery pulse total number N2; the total number of pulses applied when each fatigue sample is broken down is counted as the second recovery endurance pulse total number T2; the total number of pulses in a single cycle of pulse signals of different symmetries is the target single-cycle pulse number m, and the number of positive pulses contained in the positive pulse segment in one cycle of pulse signals of different symmetries is different;

[0028] The ratio of the total number of second recovery endurance pulses T2 to the total number of second recovery pulses N2 is defined as the total number of second recovery operations R2;

[0029] Determine the symmetry corresponding to the maximum second recovery operation total R2 as the target symmetry;

[0030] According to the target symmetry, the number of pulses k in the target forward pulse segment is determined using the symmetry formula;

[0031] According to the target single-cycle pulse number m and the target forward pulse segment pulse number k, multiple cycle pulse signals are applied to the fatigue sample until the real-time residual polarization intensity of the fatigue sample is equal to the initial polarization intensity of the fatigue sample, and the applied cycle number is obtained as the target cycle number;

[0032] Determine the product of the target number of cycles and the target number of single-cycle pulses m as the target number of hybrid recovery pulse sequence pulses N;

[0033] Based on the target single-cycle pulse number m, the target forward pulse segment pulse number k and the target hybrid recovery pulse sequence pulse number N, a hybrid recovery pulse sequence is determined.

[0034] Optionally, the flip ratio formula is:

[0035] The symmetry formula is:

[0036] Optionally, determining whether the target hafnium-based ferroelectric memory is in a fatigue state according to the first remnant polarization intensity and the initial polarization intensity includes:

[0037] Determine whether the first residual polarization intensity is less than the initial polarization intensity of the target hafnium-based ferroelectric memory to obtain a third determination result;

[0038] If the third judgment result is yes, it is determined that the target hafnium-based ferroelectric memory is in a fatigue state;

[0039] If the third judgment result is no, it is determined that the target hafnium-based ferroelectric memory is in a non-fatigue state.

[0040] In a second aspect, the present application provides a computer device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the above-mentioned method for recovering from fatigue effects of hafnium-based ferroelectric capacitors.

[0041] In a third aspect, the present application provides a computer-readable storage medium having a computer program stored thereon, which implements the above-mentioned method for recovering from fatigue effect of hafnium-based ferroelectric capacitor when executed by a processor.

[0042] In a fourth aspect, the present application provides a computer program product, including a computer program, which implements the above-mentioned method for recovering from fatigue effects of hafnium-based ferroelectric capacitors when executed by a processor.

[0043] According to the specific embodiments provided in this application, this application discloses the following technical effects:

[0044] The present application provides a method, device, medium and product for recovering fatigue effect of hafnium-based ferroelectric capacitor, which determine a hybrid recovery pulse sequence; obtain the initial polarization intensity of a target hafnium-based ferroelectric memory; obtain the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a first residual polarization intensity after performing read and write operations on the target hafnium-based ferroelectric memory; determine whether the target hafnium-based ferroelectric memory is in a fatigue state according to the first residual polarization intensity and the initial polarization intensity; when the target hafnium-based ferroelectric memory is in a fatigue state, apply a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory; the present application scientifically and quantitatively regulates the order and ratio of positive and negative pulses by regulating the flip ratio and the value of the symmetry parameter of the hybrid recovery pulse sequence, and through experiments on the correlation between these two parameters and the total number of recovery operations, a hybrid recovery pulse sequence with both good polarization recovery effect and longer device durability can be obtained, and the recovery scheme has both good polarization intensity recovery effect and longer device durability. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the figures required for use in the embodiments will be briefly introduced below. Obviously, the figures described below are only some embodiments of the present application. For ordinary technicians in this field, other figures can be obtained based on these figures without paying creative work.

[0046] Figure 1 The present invention is a flow chart of a method for recovering fatigue effect of hafnium-based ferroelectric capacitor.

[0047] Figure 2 Schematic diagram of using a hybrid recovery pulse scheme to recover from the fatigue effect of ferroelectric capacitors.

[0048] Figure 3 Schematic diagram of the total number of recovery operations and device endurance.

[0049] Figure 4 Schematic diagram of the hybrid recovery pulse sequence waveform.

[0050] Figure 5 Schematic diagram of the symmetric (1 / 99) hybrid recovery pulse sequence.

[0051] Figure 6 Schematic diagram of the symmetric (10 / 90) hybrid recovery pulse sequence.

[0052] Figure 7 Schematic diagram of the symmetrical (50 / 50) hybrid recovery pulse sequence.

[0053] Figure 8 Schematic diagram of the polarization reversal ratio (100%) hybrid recovery pulse sequence.

[0054] Fig. 9 Schematic diagram of the hybrid recovery pulse sequence with polarization reversal ratio (50%).

[0055] Fig.10 Schematic diagram of the hybrid recovery pulse sequence with polarization reversal ratio (0.5%).

[0056] Fig.11 A schematic diagram of the remanent polarization intensity recovery effect of the hybrid pulse recovery sequence scheme proposed in this application.

[0057] Fig.12 A schematic diagram of the remanent polarization intensity recovery effect and the total number of recovery endurance pulses using the hybrid pulse recovery sequence scheme proposed in this application.

[0058] Fig.13 A schematic diagram of the structure of a computer device. DETAILED DESCRIPTION

[0059] The following will be combined with the figures in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0060] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, the present application is further described in detail below with reference to the drawings and specific implementation methods.

[0061] Since the alternation of positive and negative pulses can cause the direction of ferroelectric polarization to flip, and the flip of ferroelectric polarization can produce ions with higher energy, which can easily cause the generation and movement of lattice defects, thereby causing dielectric breakdown to occur earlier. The lack of alternation of positive and negative pulses makes it difficult to restore the pinned ferroelectric domain, so the recovery speed of fatigue effect is very slow. Based on this, in an exemplary embodiment, a method for recovering fatigue effect of hafnium-based ferroelectric capacitor is provided, by regulating the sequence and ratio of positive and negative pulses in the pulse sequence to make the alternation of positive and negative pulses as small as possible, so as to extend the total number of recovery endurance pulses of ferroelectric capacitor, but at the same time, it is ensured that the alternation of positive and negative pulses occurs appropriately in order to obtain a better fatigue recovery speed, that is, the recovery of residual polarization is realized using as few recovery pulses as possible. Therefore, the durability of the device is improved. The ferroelectric capacitor recovery pulse operation scheme is a periodic electric pulse sequence, and each cycle contains positive and negative pulses at the same time, but different from the conventional bipolar pulse sequence scheme in which positive and negative pulses alternate in sequence, the positive and negative pulse sequence of the mixed pulse scheme proposed in the present application is not alternated in sequence, and the number of positive and negative pulses is also unequal. This application proposes parameters of flip ratio and symmetry to describe a specific waveform.

[0062] Specifically, Figure 1 As shown, this embodiment provides a method for recovering from fatigue effect of hafnium-based ferroelectric capacitors, comprising:

[0063] Step 101: Determine a hybrid recovery pulse sequence. The hybrid recovery pulse sequence includes N pulses. The N pulses are arranged periodically. The same cycle includes a positive pulse segment and a negative pulse segment connected in sequence. The positive pulse segment includes k positive pulses connected in sequence. The negative pulse segment includes mk negative pulses connected in sequence. Among them, m is the total number of pulses in 1 cycle. The entire recovery process includes N / m cycles. The specific values ​​of these parameters need to be determined experimentally based on the correlation between the flip ratio and symmetry and the total number of recovery operations.

[0064] Step 102: Obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory.

[0065] Step 103: After performing read and write operations on the target hafnium-based ferroelectric memory, a real-time remanent polarization intensity of the target hafnium-based ferroelectric memory is obtained as a first remanent polarization intensity.

[0066] Step 104: Determine whether the target hafnium-based ferroelectric memory is in a fatigue state according to the first remnant polarization and the initial polarization.

[0067] Step 105: When the target hafnium-based ferroelectric memory is in a fatigue state, applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory.

[0068] Step 106: Determine whether the target hafnium-based ferroelectric memory is broken down, and obtain a second determination result. If the second determination result is yes, execute step 107; if the second determination result is no, execute step 108.

[0069] Step 107: Determine that the target hafnium-based ferroelectric memory fails, and mark the address of the target hafnium-based ferroelectric memory.

[0070] Step 108: Acquire the real-time remanent polarization intensity of the target hafnium-based ferroelectric memory as the second remanent polarization intensity.

[0071] Step 109: Determine whether the second remanent polarization intensity is equal to the initial polarization intensity, and obtain a first determination result. If the first determination result is no, execute step 1010. If the first determination result is yes, execute step 1011.

[0072] Step 1010 : Determine that the fatigue effect of the target hafnium-based ferroelectric memory has not been restored, and return to step 105 .

[0073] Step 1011 : Determine that the fatigue effect of the target hafnium-based ferroelectric memory has been restored, and return to step 103 .

[0074] Step 101 includes:

[0075] Step 101-1: pulse signals with different reversal ratios are applied to multiple fatigue samples respectively until the corresponding fatigue samples are broken down, and the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the first recovery pulse total number N1; and the total number of pulses applied when each fatigue sample is broken down is counted as the first recovery endurance pulse total number T1; the total number of pulses in a single cycle in the pulse signals with different reversal ratios is different.

[0076] The flip ratio is defined as the ratio of the number of pulse direction flips in the entire pulse sequence to the total number of pulses. This parameter can be expressed as (2 / m)×100%. When the flip ratio is 0%, the pulse sequence is a traditional unidirectional pulse; when the flip ratio is 100%, the pulse sequence is a traditional bidirectional pulse.

[0077] Step 101 - 2 : Determine the ratio of the first recovery endurance pulse total number T1 to the first recovery pulse total number N1 as the first recovery operation total number R1 .

[0078] Step 101 - 3 : Determine the flip ratio corresponding to the maximum total number of first recovery operations as the target flip ratio.

[0079] Step 101 - 4 : According to the target flip ratio, the target single-cycle pulse number m is determined using the flip ratio formula.

[0080] Through the experiment of the correlation between the flip ratio and the total number of first recovery operations, the value of m and the flip ratio can be determined. When k and mk are equal, the pulse schemes with different flip ratios (2 / m)*100% are applied to the fatigue sample until breakdown, and the corresponding changes in the total number of first recovery operations are studied; then the m and flip ratio values ​​corresponding to the maximum value of the total number of first recovery operations are selected.

[0081] Step 101-5: Based on the target single-cycle pulse number m, pulse signals of different symmetries are applied to multiple fatigue samples respectively until the corresponding fatigue samples are broken down, and the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the second recovery pulse total number N2; the total number of pulses applied when each fatigue sample is broken down is counted as the second recovery endurance pulse total number T2. The total number of pulses in a single cycle of pulse signals of different symmetries is the target single-cycle pulse number m, and the number of positive pulses contained in the positive pulse segment in one cycle of pulse signals of different symmetries is different.

[0082] Symmetry is defined as the ratio of the number of negative pulses to the number of positive pulses in each cycle of the pulse sequence, which can be expressed as (mk) / k. The symmetry of traditional bidirectional pulses is 1 / 1.

[0083] Step 101-6: Define the ratio of the total number of second recovery endurance pulses T2 to the total number of second recovery pulses N2 as the total number of second recovery operations R2

[0084] Step 101 - 7 : Determine the symmetry corresponding to the maximum total number of second restoration operations as the target symmetry.

[0085] Step 101-8: According to the target symmetry, the number of pulses k in the target forward pulse segment is determined using the symmetry formula.

[0086] Through the experiment of the correlation between symmetry and the total number of second recovery operations, the values ​​of k and symmetry can be determined. After determining the value of m, pulse schemes with different symmetry (mk) / k values ​​are applied to the fatigue sample until breakdown, and the corresponding changes in the total number of second recovery operations are counted; then the k and symmetry values ​​corresponding to the maximum value of the total number of second recovery operations are selected.

[0087] Step 101-9: According to the target single-cycle pulse number m and the target forward pulse segment pulse number k, multiple periodic pulse signals are applied to the fatigue sample until the real-time residual polarization intensity of the fatigue sample is equal to the initial polarization intensity of the fatigue sample, and the applied cycle number is obtained as the target cycle number.

[0088] Step 101 - 10: Determine the product of the target cycle number and the target single-cycle pulse number m as the target hybrid recovery pulse sequence pulse number N.

[0089] After determining the flip ratio and symmetry values, several cycles (m pulses per cycle) of recovery pulses are applied to the fatigue sample until the residual polarization recovers to be equal to the initial residual polarization. The total number of recovery pulses applied is the value of N.

[0090] Step 101 - 11 : Determine a hybrid recovery pulse sequence based on the target single-cycle pulse number m, the target forward pulse segment pulse number k, and the target hybrid recovery pulse sequence pulse number N.

[0091] The flip ratio formula is:

[0092] The symmetry formula is:

[0093] Step 104 includes: determining whether the first residual polarization intensity is less than the initial polarization intensity of the target hafnium-based ferroelectric memory to obtain a third determination result. If the third determination result is yes, it is determined that the target hafnium-based ferroelectric memory is in a fatigue state. If the third determination result is no, it is determined that the target hafnium-based ferroelectric memory is in a non-fatigue state.

[0094] Paying attention to the requirements for device durability in application scenarios of hafnium-based ferroelectric capacitor devices, the present application utilizes the different breakdown characteristics of ferroelectric capacitors under bipolar pulse sequences and unipolar pulse sequences, and designs a new recovery pulse scheme by regulating the flip ratio of the pulse sequence and the pulse symmetry. This can ensure a better residual polarization recovery effect while reducing the damage of the recovery pulse to the dielectric breakdown life or the total number of recovery endurance pulses, thereby improving the device durability of the ferroelectric capacitor.

[0095] Figure 2 Schematic diagram of using a hybrid recovery pulse scheme to recover from the fatigue effect of ferroelectric capacitors. Figure 2 When the fatigue effect of the ferroelectric capacitor is significant, one end of the ferroelectric capacitor is grounded and a mixed pulse sequence is applied to the other end until the remnant polarization intensity is restored. Figure 3 Figure 2 is a schematic diagram of the total number of recovery operations and device endurance. Figure 3 After S read / write pulses are applied to the initial ferroelectric capacitor device, the residual polarization drops to half of the initial state. Then, after N recovery pulses are applied, the residual polarization returns to the initial state value. Continue to apply recovery pulses. When a total of T recovery pulses are applied, the device breaks down. The number of pulses applied T is called the total number of recovery endurance pulses. The total number of recovery operations R is the ratio of the total number of recovery endurance pulses T to the total number of recovery pulses N. The device endurance is the product of the total number of recovery operations and the read / write pulse S.

[0096] Among them, the total number of first / second recovery operations

[0097]

[0098] Figure 4 Figure 2 is a schematic diagram of the hybrid recovery pulse sequence. Figure 4 , the sequence consists of N pulses, and these N pulses are periodic, consisting of N / m cycles, where each cycle consists of k consecutive positive pulses and mk consecutive negative pulses.

[0099] Examples of three different symmetry hybrid pulse schemes are shown below: Figures 5 to 7 By adjusting the k value, different symmetry schemes can be obtained. The essential difference between these schemes lies in the different ratios of forward and reverse pulses. Examples of three mixed pulse schemes with different flip ratios are shown in Figures 8 to 10 By adjusting the value of the number of pulses m in a cycle, different flip ratio schemes can be obtained. The essential difference between these schemes lies in the different flip times.

[0100] In another embodiment, a method for recovering from fatigue effect of hafnium-based ferroelectric capacitor is provided, wherein the first to fifth steps are the process of determining and setting the hybrid recovery pulse waveform, and the sixth to tenth steps are the process of using the hybrid recovery pulse. The specific implementation steps are as follows:

[0101] Step 1: Select a number of ferroelectric capacitors in the initial state and apply read / write pulses to them until they reach a fatigue state. After S read / write pulses, the residual polarization of these ferroelectric capacitors is reduced to half of their initial value.

[0102] Step 2: Determine the value of the flip ratio through experiments on the correlation between the flip ratio and the total number of first recovery operations. Study the changes in the total number of first recovery operations when pulse schemes with different flip ratio values ​​are applied to the fatigue sample until breakdown when k and mk are equal. Then select the flip ratio value corresponding to the maximum value of the total number of first recovery operations.

[0103] Step 3: Determine the value of symmetry through experiments on the correlation between symmetry and the total number of second recovery operations. After determining the value of m in the second step, pulse schemes with different symmetry (mk) / k values ​​are applied to the fatigue sample until breakdown, and the corresponding changes in the total number of second recovery operations are calculated. Then select the symmetry value corresponding to the maximum value of the total number of second recovery operations.

[0104] Step 4: Determine the value of the recovery pulse N. After determining the values ​​of the flip ratio and symmetry, apply several cycles (m pulses per cycle) of recovery pulses to the fatigue sample until the remnant polarization is restored to the same as the initial remnant polarization. The total number of recovery pulses applied is the value of N.

[0105] Step 5: Program the mixed pulse and save it. Program the mixed pulse to have the flip ratio and symmetry obtained above and restore the pulse N value, and save the waveform.

[0106] Step 6: Regular read and write operations on the device. The device is in normal working condition.

[0107] Step 7: After each regular read and write operation, the device is fatigued. The signal strength of the read and write is analyzed and judged. If the residual polarization is greater than half of the initial value, the operation of step 6 is continued. If the residual polarization is less than or equal to half of the initial value, the reading and writing of the ferroelectric capacitor device is stopped.

[0108] Step 8: Apply the programmed hybrid pulse to the fatigue device.

[0109] Step 9: Determine whether breakdown occurs. If breakdown occurs, the device fails, the address of the device is marked, and any operation on the device is terminated. If no breakdown occurs, proceed to the next step.

[0110] Step 10: Determine whether the remnant polarization has been restored. If the remnant polarization has not been restored, return to step 8. If the remnant polarization has been restored, return to step 6.

[0111] Fig.11 In order to adopt the remanent polarization intensity recovery effect of the hybrid pulse recovery sequence scheme proposed in this application. Fig.11 The ferroelectric capacitor is first subjected to read and write operations to reach a fatigue state, and the residual polarization is significantly reduced. Then, after the hybrid recovery pulse scheme is performed, the residual polarization intensity can be restored to the initial state, indicating that this scheme can effectively recover the fatigue effect. Fig.12 The schematic diagram of the residual polarization intensity recovery effect and the total number of recovery endurance pulses of the hybrid pulse recovery sequence scheme proposed in the present application is shown. The unidirectional recovery pulse lacks the alternation of pulse direction or polarization direction, so the pinned ferroelectric domain is difficult to recover, making the polarization recovery speed very slow. The bidirectional recovery pulse, on the other hand, causes the dielectric shock to occur early due to the too frequent alternation of pulse direction, and the total number of recovery endurance pulses is low. The hybrid pulse has advantages over both schemes. Compared with the unidirectional recovery pulse, the hybrid pulse can more effectively restore the polarization intensity, and compared with the bidirectional recovery pulse, the hybrid recovery pulse can increase the total number of recovery endurance pulses.

[0112] In an exemplary embodiment, a computer device is provided. The computer device may be a server or a terminal. The internal structure diagram thereof may be as follows: Fig.13As shown. The computer device includes a processor, a memory, an input / output interface (Input / Output, referred to as I / O) and a communication interface. Wherein, the processor, the memory and the input / output interface are connected through a system bus, and the communication interface is connected to the system bus through the input / output interface. Wherein, the processor of the computer device is used to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for the operation of the operating system and the computer program in the non-volatile storage medium. The input / output interface of the computer device is used to exchange information between the processor and an external device. The communication interface of the computer device is used to communicate with an external terminal through a network connection. When the computer program is executed by the processor, a method for recovering the fatigue effect of a hafnium-based ferroelectric capacitor is implemented.

[0113] Those skilled in the art will understand that Fig.13 The structure shown in the figure is only a block diagram of a part of the structure related to the solution of the present application, and does not constitute a limitation on the computer device to which the solution of the present application is applied. The specific computer device may include more or fewer components than those shown in the figure, or combine certain components, or have a different arrangement of components. In an exemplary embodiment, a computer device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in the above-mentioned method embodiments when executing the computer program.

[0114] In an exemplary embodiment, a computer-readable storage medium is provided, storing a computer program, and when the computer program is executed by a processor, the steps in the above method embodiments are implemented.

[0115] In an exemplary embodiment, a computer program product is provided, including a computer program, and when the computer program is executed by a processor, the steps in the above method embodiments are implemented.

[0116] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, stored data, displayed data, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of relevant data must comply with relevant regulations.

[0117] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to the memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM may be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0118] The database involved in each embodiment provided in this application may include at least one of a relational database and a non-relational database. The non-relational database may include a distributed database based on blockchain, etc., but is not limited thereto. The processor involved in each embodiment provided in this application may be a general-purpose processor, a central processing unit, a graphics processor, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., but is not limited thereto.

[0119] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0120] This article uses specific examples to illustrate the principles and implementation methods of this application. The description of the above embodiments is only used to help understand the method and core ideas of this application. At the same time, for those skilled in the art, according to the ideas of this application, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting this application.

Claims

1. A method for recovering fatigue effect of hafnium-based ferroelectric capacitor, characterized in that: include: Determine the hybrid recovery pulse sequence; Obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory; After performing a read and write operation on the target hafnium-based ferroelectric memory, obtaining a real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a first residual polarization intensity; Determining whether the target hafnium-based ferroelectric memory is in a fatigue state according to the first remnant polarization intensity and the initial polarization intensity; When the target hafnium-based ferroelectric memory is in a fatigue state, a programmed hybrid recovery pulse sequence is applied to the target hafnium-based ferroelectric memory.

2. The method for recovering the fatigue effect of hafnium-based ferroelectric capacitor according to claim 1, characterized in that: After applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory, the method further comprises: Acquiring the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a second residual polarization intensity; Determine whether the second remanent polarization intensity is equal to the initial polarization intensity to obtain a first determination result; If the first judgment result is no, it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has not been restored, and the process returns to the step of "applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory"; If the first judgment result is yes, it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has been restored, and the process returns to the step of "after performing read and write operations on the target hafnium-based ferroelectric memory, obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the first residual polarization intensity".

3. The method for recovering the fatigue effect of hafnium-based ferroelectric capacitor according to claim 2, characterized in that: Before obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity, the method further includes: determining whether the target hafnium-based ferroelectric memory is broken down to obtain a second determination result; If the second judgment result is no, executing the step of "obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity"; If the second judgment result is yes, the target hafnium-based ferroelectric memory is determined to be failed, and the address of the target hafnium-based ferroelectric memory is marked.

4. The method for recovering the fatigue effect of hafnium-based ferroelectric capacitor according to claim 1, characterized in that: The hybrid recovery pulse sequence includes N pulses; the N pulses are arranged periodically; The same cycle includes a positive pulse segment and a negative pulse segment connected in sequence; the positive pulse segment includes k positive pulses connected in sequence; the negative pulse segment includes mk negative pulses connected in sequence; wherein m is the total number of pulses in 1 cycle.

5. The method for recovering the fatigue effect of hafnium-based ferroelectric capacitor according to claim 4, characterized in that: The step of determining a hybrid recovery pulse sequence comprises: Pulse signals with different reversal ratios are applied to multiple fatigue samples respectively until the corresponding fatigue samples are broken down, and the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the first recovery pulse total number N1; and the total number of pulses applied when each fatigue sample is broken down is counted as the first recovery endurance pulse total number T1; the total number of pulses in a single cycle in the pulse signals with different reversal ratios is different; Determine the ratio of the total number of first recovery endurance pulses T1 to the total number of first recovery pulses N1 as the total number of first recovery operations R1; Determine the flip ratio corresponding to the maximum total number of first recovery operations R1 as the target flip ratio; According to the target flip ratio, the target single-cycle pulse number m is determined using the flip ratio formula; Based on the target single-cycle pulse number m, pulse signals of different symmetries are applied to multiple fatigue samples respectively until the corresponding fatigue samples are broken down, and the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the second recovery pulse total number N2; the total number of pulses applied when each fatigue sample is broken down is counted as the second recovery endurance pulse total number T2; the total number of pulses in a single cycle of pulse signals of different symmetries is the target single-cycle pulse number m, and the number of positive pulses contained in the positive pulse segment in one cycle of pulse signals of different symmetries is different; The ratio of the total number of second recovery endurance pulses T2 to the total number of second recovery pulses N2 is defined as the total number of second recovery operations R2; Determine the symmetry corresponding to the maximum second recovery operation total R2 as the target symmetry; According to the target symmetry, the number of pulses k in the target forward pulse segment is determined using the symmetry formula; According to the target single-cycle pulse number m and the target forward pulse segment pulse number k, multiple cycle pulse signals are applied to the fatigue sample until the real-time residual polarization intensity of the fatigue sample is equal to the initial polarization intensity of the fatigue sample, and the applied cycle number is obtained as the target cycle number; Determine the product of the target number of cycles and the target number of single-cycle pulses m as the target number of hybrid recovery pulse sequence pulses N; Based on the target single-cycle pulse number m, the target forward pulse segment pulse number k and the target hybrid recovery pulse sequence pulse number N, a hybrid recovery pulse sequence is determined.

6. The method for recovering the fatigue effect of hafnium-based ferroelectric capacitor according to claim 5, characterized in that: The flip ratio formula is: The symmetry formula is:

7. The method for recovering from fatigue effect of hafnium-based ferroelectric capacitor according to claim 5, characterized in that: Determining whether the target hafnium-based ferroelectric memory is in a fatigue state according to the first remnant polarization intensity and the initial polarization intensity includes: Determine whether the first residual polarization intensity is less than the initial polarization intensity of the target hafnium-based ferroelectric memory to obtain a third determination result; If the third judgment result is yes, it is determined that the target hafnium-based ferroelectric memory is in a fatigue state; If the third judgment result is no, it is determined that the target hafnium-based ferroelectric memory is in a non-fatigue state.

8. A computer device comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the method for recovering from fatigue effects of a hafnium-based ferroelectric capacitor according to any one of claims 1 to 7.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the method for recovering from fatigue effect of a hafnium-based ferroelectric capacitor according to any one of claims 1 to 7 is implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the method for recovering from fatigue effect of a hafnium-based ferroelectric capacitor according to any one of claims 1 to 7 is implemented.

Images