A gallium nitride-based semiconductor laser element

Abstract

The present invention proposes a gallium nitride-based semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, which are sequentially arranged from bottom to top. A current-induced spin polarization layer is provided between the lower waveguide layer and the active layer. The lower waveguide layer, the active layer, and the current-induced spin polarization layer all have Philips ionization characteristics. The Philips ionization of the current-induced spin polarization layer is ≤ the Philips ionization of the lower waveguide layer ≤ the Philips ionization of the active layer. The Philips ionization of the current-induced spin polarization layer has a function y1=A+B*e x The present invention enables the laser to generate a spin polarization effect along the current path under the action of the electric field when current is injected into the laser, neutralizing the piezoelectric polarization and spontaneous polarization fields inside the laser, reducing the quantum confinement Stark effect, electron leakage and carrier delocalization, and improving peak gain and optical power.

Description

Technical Field

[0001] The present application relates to the field of semiconductor optoelectronic devices, and in particular to a gallium nitride-based semiconductor laser element. Background Art

[0002] Lasers are widely used in laser displays, laser televisions, laser projectors, communications, medical treatment, weaponry, guidance, rangefinders, spectral analysis, cutting, precision welding, high-density optical storage, and other fields. There are many different types of lasers, classified in various ways, including solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers offer advantages such as small size, high efficiency, light weight, excellent stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes:

[0004] 1) Laser is generated by stimulated radiation of carriers, with a small spectral half-width and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes emit spontaneous radiation, and the output power of a single light-emitting diode is in the mW level.

[0005] 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect;

[0006] 3) The spontaneous transition radiation of the light-emitting diode is incoherent light that transitions from a high energy level to a low energy level without any external influence, while the laser is stimulated transition radiation. The energy of the induced photon should be equal to the difference in the energy level of the electron transition, and the photon and the induced photon are completely coherent light;

[0007] 4) Different principles: Light-emitting diodes generate radiative recombination light when electrons and holes jump to quantum wells or pn junctions under the action of external voltage, while lasers require that lasing conditions be met before lasing. The carrier inversion distribution in the active region must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, and the threshold condition is met so that the gain is greater than the loss, and finally the laser is output.

[0008] Nitride semiconductor lasers have the following problems: the lattice mismatch and large strain in the active layer induce a strong piezoelectric polarization effect, resulting in a strong QCSE quantum confined Stark effect, an increase in the valence band step difference of the laser, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain, which limits the improvement of the laser's electro-lasing gain; the Mg acceptor activation energy of the p-type semiconductor is large and the ionization efficiency is low, the hole concentration is much lower than the electron concentration, the hole mobility is much lower than the electron mobility, and the quantum well polarization electric field increases the hole injection barrier, holes overflow the active layer, and other problems. The uneven hole injection and low efficiency lead to serious asymmetric mismatch between electrons and holes in the quantum well, electron leakage and carrier delocalization, more difficult hole transport in the quantum well, uneven carrier injection, and uneven gain. At the same time, the laser gain spectrum becomes wider and the peak gain decreases, resulting in an increase in the laser threshold current and a decrease in slope efficiency. Summary of the Invention

[0009] To solve one of the above technical problems, the present invention provides a gallium nitride-based semiconductor laser element.

[0010] An embodiment of the present invention provides a gallium nitride-based semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in sequence from bottom to top. A current-induced spin polarization layer is provided between the lower waveguide layer and the active layer. The lower waveguide layer, the active layer, and the current-induced spin polarization layer all have Philips ionization characteristics. The Philips ionization of the current-induced spin polarization layer is ≤ the Philips ionization of the lower waveguide layer ≤ the Philips ionization of the active layer. The Philips ionization of the current-induced spin polarization layer has a function y1=A+B*e x / x is the first quadrant curve shape distribution, where x is the depth of the current-induced spin polarization layer toward the active layer.

[0011] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have a breakdown field strength characteristic, the breakdown field strength of the current-induced spin polarization layer is ≤ the breakdown field strength of the lower waveguide layer ≤ the breakdown field strength of the active layer, and the breakdown field strength of the current-induced spin polarization layer has a function y2=C+D*e x +E*e -x Curved shape distribution.

[0012] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have thermal conductivity characteristics, the thermal conductivity of the active layer ≤ the thermal conductivity of the lower waveguide layer ≤ the thermal conductivity of the current-induced spin polarization layer, and the thermal conductivity of the current-induced spin polarization layer has the function y3=F+G*x 2 sinx first quadrant curve shape distribution.

[0013] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have thermal expansion coefficient characteristics, the thermal expansion coefficient of the active layer ≤ the thermal expansion coefficient of the lower waveguide layer ≤ the thermal expansion coefficient of the current-induced spin polarization layer, and the thermal expansion coefficient of the current-induced spin polarization layer has the function y4=H+I*lnx-J*e x Curved shape distribution.

[0014] Preferably, in the Philips ionization degree distribution function, the breakdown field strength distribution function, the thermal conductivity distribution function and the thermal expansion coefficient distribution function of the current-induced spin polarization layer, H≤A≤F≤C.

[0015] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have an In element concentration characteristic, the In element concentration of the current-induced spin polarization layer is ≤ the In element concentration of the lower waveguide layer ≤ the In element concentration of the active layer, and the In element of the current-induced spin polarization layer has a function y5=K+L*e x +M*e -x Curved shape distribution.

[0016] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have an In / C element ratio characteristic, the In / C element ratio of the current-induced spin polarization layer is less than or equal to the In / C element ratio of the lower waveguide layer and less than or equal to the In / C element ratio of the active layer, and the In / C element ratio of the current-induced spin polarization layer has a function y6=N+O*e x / xFirst quadrant curve shape distribution.

[0017] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have an In / H element ratio characteristic, the In / H element ratio of the current-induced spin polarization layer is ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer, and the In / H element ratio of the current-induced spin polarization layer has a function y7=P+Q*e x / xFirst quadrant curve shape distribution.

[0018] Preferably, the lower waveguide layer, the active layer and the current-induced spin polarization layer all have an In / O element ratio characteristic, the In / O element ratio of the current-induced spin polarization layer is less than or equal to the In / O element ratio of the lower waveguide layer and less than or equal to the In / O element ratio of the active layer, and the In / O element ratio of the current-induced spin polarization layer has a function y8=R+S*e x +T*e -x Curved shape distribution.

[0019] Preferably, the current induced spin polarization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ReS2, GeTe, Cu2Te, Ga2Te3, PbTe, and BaBiO3.

[0020] Preferably, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond combination, with a thickness of 10 angstroms to 120 angstroms; the barrier layer is any one of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms.

[0021] Preferably, the lower confinement layer, the lower waveguide layer, the upper waveguide layer and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0022] Preferably, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0023] The beneficial effects of the present invention are as follows: the present invention sets a current-induced spin polarization layer between the lower waveguide layer and the active layer of the semiconductor laser element, and defines the relationship between the Philips ionization degree between the lower waveguide layer, the active layer and the current-induced spin polarization layer, and further defines the specific distribution characteristics of the Philips ionization degree in the current-induced spin polarization layer, so that when the laser is injected with current, the electric field will produce a spin polarization effect along the current path direction, neutralize the piezoelectric polarization and spontaneous polarization field inside the laser, reduce the quantum confinement Stark effect, reduce electron leakage and carrier delocalization, and improve the peak gain and optical power. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0025] Figure 1 Schematic diagram of the structure of a gallium nitride-based semiconductor laser element according to an embodiment of the present invention;

[0026] Figure 2 This is a SIMS secondary ion mass spectrum of the gallium nitride-based semiconductor laser device according to an embodiment of the present invention.

[0027] Reference numerals:

[0028] 100. Substrate, 101. Lower confinement layer, 102. Lower waveguide layer, 103. Active layer, 104. Upper waveguide layer, 105. Upper confinement layer, 106. Current-induced spin polarization layer. DETAILED DESCRIPTION

[0029] In order to make the technical solutions and advantages of the embodiments of the present application more clearly understood, the exemplary embodiments of the present application are further described in detail below with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, and are not an exhaustive list of all the embodiments. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other unless they conflict.

[0030] like Figure 1 and Figure 2 As shown, this embodiment provides a gallium nitride-based semiconductor laser device, comprising, arranged from bottom to top, a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105. A current-induced spin polarization layer 106 is also provided in the gallium nitride-based semiconductor laser device.

[0031] Specifically, in this embodiment, the gallium nitride-based semiconductor laser element is provided with a substrate 100, a lower confinement layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper confinement layer 105 in order from bottom to top. A current-induced spin polarization layer 106 is provided between the lower waveguide layer 102 and the active layer 103. The lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have Philips ionization characteristics and also have a certain magnitude relationship, specifically: the Philips ionization of the current-induced spin polarization layer 106 ≤ the Philips ionization of the lower waveguide layer 102 ≤ the Philips ionization of the active layer 103. The Philips ionization in the current-induced spin polarization layer 106 has the function y1=A+B*e x / x is the first quadrant curve shape distribution, A and B are both arbitrary values, and x is the depth of the current-induced spin polarization layer 106 toward the active layer 103.

[0032] In this embodiment, a current-induced spin polarization layer 106 is provided between the lower waveguide layer 102 and the active layer 103 of the semiconductor laser element. The relationship between the Phillips ionization degrees among the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 is defined. The specific distribution characteristics of the Phillips ionization degree in the current-induced spin polarization layer 106 are further defined. When the laser is injected with current, the electric field generates a spin polarization effect along the current path, neutralizing the piezoelectric polarization and spontaneous polarization fields within the laser, reducing the quantum-confined Stark effect, lowering electron leakage and carrier delocalization, and improving peak gain and optical power.

[0033] In some optional embodiments, the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have breakdown field strength characteristics and have a certain magnitude relationship, specifically: the breakdown field strength of the current-induced spin polarization layer 106 ≤ the breakdown field strength of the lower waveguide layer 102 ≤ the breakdown field strength of the active layer 103. The breakdown field strength of the current-induced spin polarization layer 106 has the function y2=C+D*e x +E*e -x Curve shape distribution, C, D, and E are all arbitrary values.

[0034] This embodiment further defines the specific distribution characteristics of the breakdown field strength in the current-induced spin polarization layer 106 by defining the relationship between the breakdown field strengths among the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106. The current-induced internal electric field can regulate the spin wave resonance mode, making the conduction band and the valence band completely spin-polarized, enhancing the carrier spin polarization and the injection of spin carriers into the active layer 103 of the laser element, reducing the hole injection barrier and the valence band step, improving the efficiency of hole injection into the active layer 103, and increasing the overlap probability of the electron-hole wave function in the laser active layer 103. This enhances the stimulated emission of the laser element, reduces the excitation threshold of the laser element, enhances the confinement factor, and improves the lasing power and slope efficiency of the laser element.

[0035] In some optional embodiments, the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have thermal conductivity characteristics and have a certain magnitude relationship, specifically: the thermal conductivity of the active layer 103 ≤ the thermal conductivity of the lower waveguide layer 102 ≤ the thermal conductivity of the current-induced spin polarization layer 106. The thermal conductivity of the current-induced spin polarization layer 106 has the function y3=F+G*x 2 The sinx first quadrant curve shape distribution, F and G are arbitrary values.

[0036] The lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have thermal expansion coefficient characteristics and a certain magnitude relationship. Specifically, the thermal expansion coefficient of the active layer 103 is ≤ the thermal expansion coefficient of the lower waveguide layer 102 ≤ the thermal expansion coefficient of the current-induced spin polarization layer 106. The thermal expansion coefficient of the current-induced spin polarization layer 106 has the function y4=H+I*lnx-J*e x Curve shape distribution, H, I, and J are all arbitrary values.

[0037] Furthermore, in the Philips ionization degree distribution function, the breakdown field intensity distribution function, the thermal conductivity distribution function, and the thermal expansion coefficient distribution function of the current-induced spin polarization layer 106 , H≤A≤F≤C.

[0038] This embodiment defines the relationship between the thermal conductivity and thermal expansion coefficient among the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106, and further defines the specific distribution characteristics of the thermal conductivity and thermal expansion coefficient in the current-induced spin polarization layer 106. This controls the thermal effect and thermal strain of the current-induced spin polarization layer 106, thereby regulating the spin polarization effect of the active layer 103, reducing hot carrier leakage, enhancing the uniformity and localization of electron-hole injection, and improving the carrier concentration in the active layer 103. This suppresses the broadening of the laser gain spectrum, improves the peak gain, and improves the confinement factor and slope efficiency.

[0039] In some optional embodiments, the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have In element concentration characteristics and have a certain magnitude relationship, specifically: the In element concentration of the current-induced spin polarization layer 106 ≤ the In element concentration of the lower waveguide layer 102 ≤ the In element concentration of the active layer 103. The In element of the current-induced spin polarization layer 106 has the function y5=K+L*e x +M*e -x Curve shape distribution, K, L, and M are all arbitrary values.

[0040] The lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have an In / C element ratio characteristic and a certain magnitude relationship. Specifically, the In / C element ratio of the current-induced spin polarization layer 106 ≤ the In / C element ratio of the lower waveguide layer 102 ≤ the In / C element ratio of the active layer 103. The In / C element ratio of the current-induced spin polarization layer 106 has the function y6=N+O*e x / xThe first quadrant curve shape distribution, N and O are both arbitrary values.

[0041] The lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have an In / H element ratio characteristic and a certain magnitude relationship. Specifically, the In / H element ratio of the current-induced spin polarization layer 106 ≤ the In / H element ratio of the lower waveguide layer 102 ≤ the In / H element ratio of the active layer 103. The In / H element ratio of the current-induced spin polarization layer 106 has the function y7=P+Q*e x / xThe first quadrant curve shape distribution, P and Q are both arbitrary values.

[0042] The lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106 all have an In / O element ratio characteristic and a certain magnitude relationship, specifically: the In / O element ratio of the current-induced spin polarization layer 106 ≤ the In / O element ratio of the lower waveguide layer 102 ≤ the In / O element ratio of the active layer 103. The In / O element ratio of the current-induced spin polarization layer 106 has the function y8=R+S*e x +T*e -x Curve shape distribution, R, S, and T are all arbitrary values.

[0043] This embodiment defines the relationship between the In element concentration, In / C element ratio, In / H element ratio, and In / O element ratio among the lower waveguide layer 102, the active layer 103, and the current-induced spin polarization layer 106. Furthermore, the specific distribution characteristics of the In element concentration, In / C element ratio, In / H element ratio, and In / O element ratio in the current-induced spin polarization layer 106 are defined. This allows the polarization field of the spin polarization layer to be regulated, neutralizing and suppressing the polarization field within the laser. This results in complete spin polarization of the conduction band and valence band, enhancing carrier spin polarization and spin carrier injection into the active layer 103 of the laser element. This improves carrier transport and recombination efficiency, increases laser gain, reduces threshold current density, and increases laser optical power.

[0044] In some optional embodiments, the current-induced spin polarization layer 106 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ReS2, GeTe, Cu2Te, Ga2Te3, PbTe, and BaBiO3.

[0045] In some optional embodiments, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, and the number of periods is 3≥m≥1.

[0046] Specifically, the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, and has a thickness of 10 angstroms to 120 angstroms.

[0047] The barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms.

[0048] In some optional embodiments, the lower confinement layer 101, the lower waveguide layer 102, the upper waveguide layer 104, and the upper confinement layer 105 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN.

[0049] In some optional embodiments, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

[0050] The following table compares the parameters of a conventional semiconductor laser device and the GaN-based semiconductor laser device proposed in this embodiment, including slope efficiency, threshold current density, optical power, and limiting factor, showing the differences between the conventional semiconductor laser device and the GaN-based semiconductor laser device proposed in this embodiment:

[0051]

[0052] It can be seen that the gallium nitride-based semiconductor laser element proposed in this embodiment has improved slope efficiency, optical power and limitation factor, and reduced threshold current density compared with traditional semiconductor lasers, and has obvious advantages over traditional semiconductor lasers.

[0053] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A gallium nitride-based semiconductor laser element, comprising a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer, arranged in order from bottom to top, characterized in that: A current-induced spin polarization layer is provided between the lower waveguide layer and the active layer. The lower waveguide layer, the active layer and the current-induced spin polarization layer all have Philips ionization characteristics. The Philips ionization of the current-induced spin polarization layer is ≤ the Philips ionization of the lower waveguide layer ≤ the Philips ionization of the active layer. The Philips ionization of the current-induced spin polarization layer has a function y1=A+B*e x / x is the first quadrant curve shape distribution, where x is the depth of the current-induced spin polarization layer toward the active layer.

2. The gallium nitride-based semiconductor laser device according to claim 1, wherein The lower waveguide layer, the active layer and the current-induced spin polarization layer all have breakdown field strength characteristics, the breakdown field strength of the current-induced spin polarization layer is ≤ the breakdown field strength of the lower waveguide layer ≤ the breakdown field strength of the active layer, and the breakdown field strength of the current-induced spin polarization layer has the function y2=C+D*e x +E*e -x Curved shape distribution.

3. The gallium nitride-based semiconductor laser device according to claim 2, wherein: The lower waveguide layer, the active layer and the current-induced spin polarization layer all have thermal conductivity characteristics, the thermal conductivity of the active layer is ≤ the thermal conductivity of the lower waveguide layer ≤ the thermal conductivity of the current-induced spin polarization layer, and the thermal conductivity of the current-induced spin polarization layer has the function y3=F+G*x 2 sinx first quadrant curve shape distribution.

4. The gallium nitride-based semiconductor laser device according to claim 3, wherein The lower waveguide layer, the active layer and the current-induced spin polarization layer all have thermal expansion coefficient characteristics, the thermal expansion coefficient of the active layer is ≤ the thermal expansion coefficient of the lower waveguide layer ≤ the thermal expansion coefficient of the current-induced spin polarization layer, and the thermal expansion coefficient of the current-induced spin polarization layer has a function y4=H+I*lnx-J*e x Curved shape distribution.

5. The gallium nitride-based semiconductor laser device according to claim 4, wherein In the Philips ionization degree distribution function, breakdown field strength distribution function, thermal conductivity distribution function and thermal expansion coefficient distribution function of the current-induced spin polarization layer, H≤A≤F≤C.

6. The gallium nitride-based semiconductor laser device according to claim 1, wherein The lower waveguide layer, the active layer and the current induced spin polarization layer all have an In element concentration characteristic, wherein the In element concentration of the current induced spin polarization layer is less than or equal to the In element concentration of the lower waveguide layer and less than or equal to the In element concentration of the active layer, and the In element of the current induced spin polarization layer has a function y5=K+L*e x +M*e -x Curved shape distribution.

7. The gallium nitride-based semiconductor laser device according to claim 6, wherein: The lower waveguide layer, the active layer and the current-induced spin polarization layer all have an In / C element ratio characteristic, the In / C element ratio of the current-induced spin polarization layer is less than or equal to the In / C element ratio of the lower waveguide layer and less than or equal to the In / C element ratio of the active layer, and the In / C element ratio of the current-induced spin polarization layer has a function y6=N+O*e x / xFirst quadrant curve shape distribution.

8. The gallium nitride-based semiconductor laser device according to claim 7, wherein The lower waveguide layer, the active layer and the current-induced spin polarization layer all have an In / H element ratio characteristic, the In / H element ratio of the current-induced spin polarization layer is ≤ the In / H element ratio of the lower waveguide layer ≤ the In / H element ratio of the active layer, and the In / H element ratio of the current-induced spin polarization layer has a function y7=P+Q*e x / xFirst quadrant curve shape distribution.

9. The gallium nitride-based semiconductor laser device according to claim 8, wherein The lower waveguide layer, the active layer and the current induced spin polarization layer all have an In / O element ratio characteristic, the In / O element ratio of the current induced spin polarization layer is less than or equal to the In / O element ratio of the lower waveguide layer and less than or equal to the In / O element ratio of the active layer, and the In / O element ratio of the current induced spin polarization layer has a function y8=R+S*e x +T*e -x Curved shape distribution.

10. The gallium nitride-based semiconductor laser device according to claim 1, wherein The current induced spin polarization layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, ReS2, GeTe, Cu2Te, Ga2Te3, PbTe, and BaBiO3; The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond , with a thickness of 10 angstroms to 120 angstroms; the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 angstroms to 200 angstroms; The lower confinement layer, the lower waveguide layer, the upper waveguide layer, and the upper confinement layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, and BN; The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, sapphire / AlN composite substrate, sapphire / SiN x , sapphire / SiO2 / SiN x Composite substrate, any one of magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrates.

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