Substrate processing method, semiconductor device manufacturing method, substrate processing apparatus, and program

Abstract

The method includes: a film forming step of forming a film on a substrate in a processing chamber; and a modification step for modifying the film in the processing chamber, in which the amount of gas discharged from the processing chamber in the modification step is set to be greater than the amount of gas discharged from the processing chamber in the film forming step.

Description

Technical Field

[0001] The present application relates to a substrate processing method, a method for manufacturing a semiconductor device, a substrate processing device, and a program. Background Art

[0002] With the recent miniaturization of LSI manufacturing processes and changes in materials, a technology for forming a high-quality film at a low temperature is required. As one of the means, as described in Patent Document 1, active species can be used to form a film on a substrate. This can improve the film density or impurities in the film, but on the other hand, there is a disadvantage that the active species cannot spread throughout the entire substrate, resulting in poor in-plane uniformity of the film thickness.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-067820 Summary of the invention

[0006] Problems to be solved by the invention

[0007] The present application provides a technology that can improve the in-plane uniformity of film thickness of a substrate.

[0008] Means for solving problems

[0009] According to one embodiment of the present disclosure, there is provided a method comprising: a film forming process for forming a film on a substrate in a processing chamber; and a modification process for modifying the film in the processing chamber, wherein the exhaust volume of the gas from the processing chamber in the modification process is set to be greater than the exhaust volume of the gas from the processing chamber in the film forming process.

[0010] Effects of the Invention

[0011] According to the present disclosure, the in-plane uniformity of the film thickness of the substrate can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic diagram showing the structure of a substrate processing apparatus according to an embodiment of the present disclosure.

[0013] Figure 2 A substrate processing apparatus according to an embodiment of the present disclosure is Figure 1 AA line cross-section diagram.

[0014] Figure 3 This is a block diagram for explaining a controller included in the substrate processing apparatus according to the embodiment of the present disclosure.

[0015] Figure 4 It is a diagram showing a film forming sequence of a method for manufacturing a semiconductor device according to an embodiment of the present disclosure.

[0016] Figure 5 This is a diagram showing the operation timing of each part in the film formation sequence of the method for manufacturing a semiconductor device according to the embodiment of the present disclosure.

[0017] Figure 6 It is a diagram showing the configuration of an exhaust system according to an embodiment of the present disclosure.

[0018] Figure 7 It is a diagram showing the configuration of an exhaust system according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0019] Hereinafter, an example of the present embodiment will be described with reference to the drawings. In addition, in each of the drawings, the same reference symbols are given to the same or equivalent components and parts. In addition, the dimensional ratios of the drawings are exaggerated for the convenience of description and may be different from the actual ratios. In addition, the upper direction of the drawings is described as the top or the upper part, and the lower direction is described as the bottom or the lower part. Moreover, the pressures described in the present embodiment all mean the air pressure. In addition, the arrow UP shown in the figure indicates the top of the device.

[0020] <Overall Structure of Substrate Processing Apparatus>

[0021] like Figure 1 As shown, the substrate processing apparatus 100 includes a processing furnace 202, and a heater 207 as a heating means (heating mechanism) is disposed in the processing furnace 202. The heater 207 is cylindrical and is vertically mounted by being supported by a heater base (not shown) as a holding plate.

[0022] A reaction tube 203 is provided inside the heater 207 concentrically with the heater 207. The reaction tube 203 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed into a cylindrical shape with a closed upper end and an open lower end. Below the reaction tube 203, a manifold (inlet flange) 209 is provided concentrically with the reaction tube 203. The manifold 209 is made of a metal such as stainless steel (SUS), and is formed into a cylindrical shape with an open upper end and a lower end. The upper end of the manifold 209 is engaged with the lower end of the reaction tube 203, and is configured to support the reaction tube 203.

[0023] An O-ring 220a as a sealing member is provided between the manifold 209 and the reaction tube 203. The manifold 209 is supported by the heater base, so that the reaction tube 203 is installed vertically. A processing chamber 201 is formed in the hollow portion of the reaction tube 203. The processing chamber 201 is configured to accommodate a plurality of wafers 200 as substrates in a horizontal posture in a multi-stage arrangement in the vertical direction through a wafer boat 217 described later.

[0024] In the processing chamber 201, nozzles 249a (first nozzle) and 249b (second nozzle) extending in the up-down direction are provided to penetrate the side wall of the manifold 209. Gas supply pipes 232a and 232b are connected to the nozzles 249a and 249b, respectively. Thus, a plurality of types of gases, in this case two types of gases, can be supplied into the processing chamber 201.

[0025] The gas supply pipes 232a and 232b are provided with mass flow controllers (MFC) 241a and 241b as flow controllers (flow control units) and valves 243a and 243b as opening and closing valves, respectively, in order from the upstream direction. Gas supply pipes 232c and 232d for supplying inert gas are connected to the gas supply pipes 232a and 232b on the downstream side of the valves 243a and 243b, respectively. The gas supply pipes 232c and 232d are provided with MFCs 241c and 241d as flow controllers (flow control units) and valves 243c and 243d as opening and closing valves, respectively, in order from the upstream direction.

[0026] Furthermore, the gas supply pipe 232a is provided with a storage unit (tank) 280 for accumulating raw material gas and a valve 265 in order from the upstream side, on the downstream side of the connection portion connected to the gas supply pipe 232c. Furthermore, the gas supply pipe 232e branched from the gas supply pipe 232c is connected to the gas supply pipe 232a on the downstream side of the valve 265. Furthermore, the gas supply pipe 232e is provided with an MFC 241e as a flow controller (flow control unit) and a valve 243e as an on-off valve in order from the upstream side.

[0027] A nozzle 249a is connected to the front end of the gas supply pipe 232a. Figure 2 As shown, the nozzle 249a is provided in the annular space between the inner wall of the reaction tube 203 and the wafer 200, and rises from the lower part to the upper part of the inner wall of the reaction tube 203 toward the upper part in the loading direction (up and down direction) of the wafer 200. That is, the nozzle 249a is provided on the side of the wafer arrangement area where the wafers 200 are arranged.

[0028] The nozzle 249a is configured as an L-shaped long nozzle, the horizontal portion of which is configured to penetrate the side wall of the manifold 209, and the vertical portion of which is configured to rise from at least one end side of the wafer arrangement area toward the other end side. A gas supply hole 250a for supplying gas is provided on the side of the nozzle 249a. The gas supply hole 250a opens toward the center of the reaction tube 203 and can supply gas toward the wafer 200. A plurality of gas supply holes 250a are provided from the bottom to the top of the reaction tube 203, each having the same opening area and being arranged at the same opening spacing. In addition, the shape of the nozzle 249a is not particularly limited, for example, the horizontal portion and the vertical portion may also be different bodies.

[0029] A nozzle 249b is connected to the front end of the gas supply pipe 232b. The nozzle 249b is provided in the buffer chamber 237 which is a gas dispersion space. Figure 2 As shown, the buffer chamber 237 is an annular space between the inner wall of the reaction tube 203 and the wafer 200, and is provided from the lower part to the upper part of the processing chamber 201 along the loading direction of the wafer 200. That is, the buffer chamber 237 is provided in the area horizontally surrounding the wafer arrangement area on the side of the wafer arrangement area.

[0030] In the buffer chamber 237, a gas supply hole 250c for supplying gas is provided at the end of the wall adjacent to the wafer 200. The gas supply hole 250c opens toward the center of the reaction tube 203 and can supply gas toward the wafer 200. A plurality of gas supply holes 250c are provided from the bottom to the top of the reaction tube 203, each having the same opening area and arranged at the same opening pitch.

[0031] The nozzle 249b is provided at the end portion opposite to the end portion of the buffer chamber 237 where the gas supply hole 250c is provided, and rises upward in the loading (arrangement) direction of the wafers 200 along the lower portion to the upper portion of the inner wall of the reaction tube 203. That is, the nozzle 249b is provided on the side of the wafer arrangement area where the wafers 200 are arranged. The nozzle 249b is configured as an L-shaped long nozzle, the horizontal portion of which is provided to penetrate the side wall of the manifold 209, and the vertical portion of which is provided to rise from at least one end side of the wafer arrangement area toward the other end side. A gas supply hole 250b for supplying gas is provided on the side of the nozzle 249b. The gas supply hole 250b opens toward the center of the buffer chamber 237. Similar to the gas supply hole 250c, a plurality of gas supply holes 250b are provided from the lower portion to the upper portion of the reaction tube 203. The nozzle 249b is also similar to the nozzle 249a. The shape is not particularly limited. For example, the horizontal portion and the vertical portion may be different bodies.

[0032] By adjusting the opening area or the opening pitch of each gas supply hole 250b from the upstream side to the downstream side as described above, it is possible to eject almost the same amount of gas from each gas supply hole 250b despite the difference in flow velocity. Then, the gas ejected from each of these multiple gas supply holes 250b is temporarily introduced into the buffer chamber 237, and the difference in gas flow velocity can be made uniform in the buffer chamber 237.

[0033] Thus, in this embodiment, the gas is supplied through the nozzles 249a and 249b and the buffer chamber 237 arranged in the annular longitudinal space defined by the inner wall of the reaction tube 203 and the ends of the plurality of wafers 200 loaded, that is, in the cylindrical space.

[0034] Then, the gas is first ejected into the processing chamber 201 near the wafer 200 from the nozzles 249a, 249b and the gas supply holes 250a to 250c respectively opening into the buffer chamber 237. In addition, the main flow of the gas in the processing chamber 201 is in a direction parallel to the surface of the wafer 200, that is, in a horizontal direction. By setting such a structure, the gas is uniformly supplied to each wafer 200, and the uniformity of the film thickness of the film formed on each wafer 200 can be improved. The gas flowing on the surface of the wafer 200, that is, the residual gas after the reaction, flows toward the exhaust port, that is, the second exhaust line 231 described later. However, the direction of the flow of the residual gas is appropriately determined according to the position of the exhaust port, and is not limited to the vertical direction.

[0035] like Figure 1 As shown, the raw material gas is supplied from the gas supply pipe 232a to the processing chamber 201 via the MFC 241a, the valve 243a, the gas supply pipe 232a, the storage unit 280, the valve 265, and the nozzle 249a.

[0036] The raw material gas is a raw material in a gaseous state, for example, a gas obtained by vaporizing a raw material in a liquid state at normal temperature and pressure, or a raw material in a gaseous state at normal temperature and pressure, etc. When the term "raw material" is used in this specification, it means a "liquid raw material in a liquid state", a "raw material gas in a gaseous state", or both.

[0037] The reaction gas is supplied from the gas supply pipe 232 b to the processing chamber 201 via the MFC 241 b , the valve 243 b , the gas supply pipe 232 b , the nozzle 249 b , and the buffer chamber 237 .

[0038] In this embodiment, nitrogen (N2) gas is supplied as an inert gas from the gas supply pipe 232c to the processing chamber 201 via the MFC 241c, the valve 243c, the storage unit 280, the valve 265, and the gas supply pipe 232a.

[0039] In this embodiment, nitrogen (N 2 ) gas is supplied as an inert gas from the gas supply pipe 232 e to the processing chamber 201 via the MFC 241 e , the valve 243 e , and the gas supply pipe 232 a .

[0040] In this embodiment, nitrogen (N 2 ) gas is supplied as an inert gas from the gas supply pipe 232 d to the processing chamber 201 via the MFC 241 d , the valve 243 d , the gas supply pipe 232 b , and the buffer chamber 237 .

[0041] When the above-mentioned gases flow from each gas supply pipe, a raw material gas supply system (raw material gas pipeline) for supplying raw materials containing a predetermined element is mainly composed of the gas supply pipe 232a, MFC241a, valve 243a, storage unit 280, and valve 265.

[0042] In addition, a reaction gas supply system (reaction gas line) for supplying reaction gas is mainly constituted by the gas supply pipe 232 b , the MFC 241 b , and the valve 243 b .

[0043] In addition, the inert gas supply system is mainly composed of the gas supply pipes 232c, 232d, 232e, the MFCs 241c, 241d, 241e, and the valves 243c, 243d, 243e.

[0044] In the buffer chamber 237, as Figure 2 As shown in the figure, two rod-shaped electrodes 269 and 270, which are made of a conductor and have an elongated structure, are arranged from the bottom to the top of the reaction tube 203 along the stacking direction of the wafers 200. Each of the rod-shaped electrodes 269 and 270 is arranged in parallel with the nozzle 249b. Each of the rod-shaped electrodes 269 and 270 is covered and protected by the electrode protection tube 275 from the top to the bottom. One of the rod-shaped electrodes 269 and 270 is connected to the high-frequency power supply 273 via the matching device 272, and the other is connected to the ground wire as a reference potential. High-frequency (RF) power is applied from the high-frequency power supply 273 to between the rod-shaped electrodes 269 and 270 via the matching device 272, so that plasma is generated in the plasma generation area 224 between the rod-shaped electrodes 269 and 270. The plasma source as a plasma generator (plasma generation part) is mainly composed of the rod-shaped electrodes 269 and 270 and the electrode protection tube 275. The plasma source functions as an activation section (excitation section) that activates (excites) a gas into a plasma state as described later.

[0045] like Figure 1As shown, there are provided: a first exhaust line 230 as a bypass exhaust line, which is an exhaust pipe for exhausting the atmosphere of the processing chamber 201; and a second exhaust line 231 as a main exhaust line. Specifically, the second exhaust line 231 as an exhaust pipe for exhausting the atmosphere of the processing chamber 201 is connected to the reaction tube 203. One end of the second exhaust line 231 is connected to the exhaust port at the lower end of the processing chamber 201. In addition, the second exhaust line 231 is connected to a vacuum pump 246 as an exhaust device via a pressure sensor 245 as a pressure detector (pressure measuring unit) for detecting the pressure in the processing chamber 201 and an APC (AutoPressure Controller, automatic pressure regulator) valve 242 as an opening and closing valve (pressure regulating unit). The APC valve 242 is constructed so that the exhaust and exhaust stop of the processing chamber 201 can be performed by opening and closing the valve while the vacuum pump 246 is in operation, and the valve opening can be adjusted according to the pressure information detected by the pressure sensor 245 while the vacuum pump 246 is in operation, thereby adjusting the pressure of the processing chamber 201.

[0046] Furthermore, the second exhaust line 231 is provided with the first exhaust line 230, which branches upstream of the APC valve 242 and merges downstream of the APC valve 242. The flow path cross-sectional area of ​​the first exhaust line 230 is configured to be smaller than the flow path cross-sectional area of ​​the second exhaust line 231. In other words, the exhaust volume of the second exhaust line 231 is configured to be larger than the exhaust volume of the first exhaust line 230. In this case, since the vacuum pump 246 is common, the exhaust volume (exhaust capacity) of the second exhaust line 231 is configured to be larger than the exhaust volume (exhaust capacity) of the first exhaust line 230. Therefore, by making the performance of the vacuum pump 246 different, the exhaust volume (exhaust capacity) of each exhaust line can also be adjusted. Here, the first exhaust line 230 is provided with an APC (Auto Pressure Controller) valve 244 as an on-off valve (pressure regulating unit). The exhaust system is mainly composed of the first exhaust line 230, the second exhaust line 231, the APC valves 242 and 244, and the pressure sensor 245. In addition, it is also conceivable that a vacuum pump 246 is included in the exhaust system.

[0047] like Figure 1As shown, a sealing cover 219 as a furnace cover body that can airtightly close the lower end opening of the manifold 209 is provided below the manifold 209. The sealing cover 219 is configured to abut against the lower end of the manifold 209 from the lower side in the vertical direction. The sealing cover 219 is made of a metal material such as SUS and is formed in a disc shape. An O-ring 220b as a sealing member abutting against the lower end of the manifold 209 is provided on the upper surface of the sealing cover 219. A rotating mechanism 267 for rotating the wafer boat 217 described later is provided on the opposite side of the sealing cover 219 from the processing chamber 201. The rotating shaft 255 of the rotating mechanism 267 passes through the sealing cover 219 and is connected to the wafer boat 217. The rotating mechanism 267 is configured to rotate the wafer 200 by rotating the wafer boat 217. The sealing cover 219 is configured to be lifted and lowered in the vertical direction by the wafer boat elevator 115 as a lifting mechanism vertically provided outside the reaction tube 203. The boat elevator 115 is configured to carry the boat 217 into and out of the processing chamber 201 by raising and lowering the sealing cap 219. The boat elevator 115 is configured as a transport device (transport mechanism) that transports the boat 217 and the wafers 200 supported by the boat 217 into and out of the processing chamber 201.

[0048] The wafer boat 217 as a substrate support is configured to support a plurality of wafers 200, for example, 25 to 200, in a horizontal position and arranged in a vertical direction with their centers aligned with each other, that is, the wafer boat 217 is configured to arrange the wafers 200 with gaps between them. The wafer boat 217 is made of, for example, a heat-resistant material such as quartz or SiC. A heat insulating member 218 made of, for example, a heat-resistant material such as quartz or SiC is provided at the bottom of the wafer boat 217.

[0049] A temperature sensor 263 as a temperature detector is provided in the processing chamber 201. The power supply to the heater 207 is adjusted based on the temperature information detected by the temperature sensor 263, so that the temperature of the processing chamber 201 becomes a desired temperature distribution. The temperature sensor 263 is configured in an L shape similarly to the nozzles 249a and 249b, and is provided along the inner wall of the reaction tube 203.

[0050] like Figure 3 As shown, the controller 121 of the control unit (control unit) is configured as a computer having a CPU (Central Processing Unit) 121a, a RAM (Random Access Memory) 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured to exchange data with the CPU 121a via an internal bus 121e. The controller 121 is connected to an input / output device 122 configured as a touch panel, etc.

[0051] The storage device 121c is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. A control program for controlling the operation of the substrate processing device, a process recipe for recording the sequence or conditions of the substrate processing such as the film formation described later, etc., are readable and stored in the storage device 121c. The process recipe enables the controller 121 to execute each sequence in the substrate processing process such as the film formation process described later, and is combined in a manner that a predetermined result can be obtained, and functions as a program. Hereinafter, the process recipe or the control program, etc., are also collectively referred to as a program.

[0052] The I / O port 121d is connected to the above-mentioned MFC241a~241e, valves 243a~243e, 265, pressure sensor 245, APC valves 242, 244, vacuum pump 246, temperature sensor 263, heater 207, rotating mechanism 267, wafer boat elevator 115, matcher 272, high-frequency power supply 273, etc.

[0053] The CPU 121a is configured to read out a control program from the storage device 121c and execute it, and read out a process recipe from the storage device 121c according to input of an operation command from the input / output device 122. The CPU 121a is configured to control the flow rate adjustment operation of various gases by the MFCs 24a to 241e, the opening and closing operation of the valves 243a to 243e and 265, the opening and closing operation of the APC valves 242 and 244 and the pressure adjustment operation of the APC valves 242 and 244 by the pressure sensor 245, the start and stop of the vacuum pump 246, the temperature adjustment operation of the heater 207 by the temperature sensor 263, the rotation and rotation speed adjustment operation of the wafer boat 217 by the rotation mechanism 267, the lifting and lowering operation of the wafer boat 217 by the wafer boat elevator 115, the impedance adjustment operation by the matching device 272, the power supply of the high frequency power source 273, etc. according to the contents of the read process recipe.

[0054] The controller 121 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer. For example, an external storage device (e.g., a magnetic disk such as a magnetic tape, a floppy disk or a hard disk, an optical disk such as a CD or a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory or a memory card) 123 for storing the above-mentioned program is prepared, and the program is installed on a general-purpose computer using the external storage device 123, thereby configuring the controller 121 of the present embodiment. However, the means for supplying the program to the computer is not limited to the case where it is supplied via the external storage device 123. For example, the program may be supplied not via the external storage device 123 but by using a communication unit such as the Internet or a dedicated line. The storage device 121c or the external storage device 123 is configured as a computer-readable recording medium.

[0055] Hereinafter, these are also referred to as recording media. When the term recording medium is used in this specification, it may include only the storage device 121c alone, only the external storage device 123 alone, or both.

[0056] (Film forming treatment)

[0057] Next, make appropriate use of Figure 1 to Figure 5 The following specifically describes a film forming sequence for forming a film (film formation) on a wafer 200 using the substrate processing apparatus 100 as a step in a manufacturing process (manufacturing method) of a semiconductor device (semiconductor equipment). In the following description, the operations of the various components constituting the substrate processing apparatus 100 are controlled by the controller 121.

[0058] [Wafer charging and wafer boat loading]

[0059] When a plurality of wafers 200 are loaded into the wafer boat 217 (wafer filling), as shown in FIG. Figure 1 As shown, the boat 217 supporting the plurality of wafers 200 is lifted by the boat elevator 115 and carried into the processing chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring 220b.

[0060] In addition, when the term "wafer" is used in this specification, it may mean "the wafer itself", or "a laminate (aggregate) of predetermined layers or films formed on a wafer and its surface", that is, a wafer including predetermined layers or films formed on the surface. Furthermore, when the term "surface of a wafer" is used in this specification, it may mean "the surface (exposed surface) of the wafer itself", or "the surface of a predetermined layer or film formed on a wafer, that is, the outermost surface of the wafer as a laminate".

[0061] Therefore, in this specification, when it is stated that “a predetermined gas is supplied to the wafer”, it may mean “a predetermined gas is directly supplied to the surface (exposed surface) of the wafer itself”, or it may mean “a predetermined gas is supplied to a layer or film formed on the wafer, that is, to the outermost surface of the wafer as a laminate”. Furthermore, in this specification, when it is stated that “a predetermined layer (or film) is formed on the wafer”, it may mean “a predetermined layer (or film) is directly formed on the surface (exposed surface) of the wafer itself”, or it may mean “a predetermined layer (or film) is formed on a layer or film formed on the wafer, that is, to the outermost surface of the wafer as a laminate”.

[0062] [Pressure adjustment and temperature adjustment]

[0063] The vacuum pump 246 exhausts the gas in the processing chamber 201 so that the pressure of the processing chamber 201, that is, the pressure of the space where the wafer 200 exists, becomes the desired pressure (vacuum degree). At this time, the pressure in the processing chamber 201 is measured by the pressure sensor 245, and the APC valves 242 and 244 are feedback-controlled (pressure adjustment) based on the measured pressure information. The vacuum pump 246 maintains a state of constant operation at least until the processing of the wafer 200 is completed.

[0064] In addition, the processing chamber 201 is heated by the heater 207 so that the wafer 200 in the processing chamber 201 reaches a desired temperature. At this time, the power supply to the heater 207 is feedback-controlled (temperature adjustment) based on the temperature information detected by the temperature sensor 263 so that the processing chamber 201 has a desired temperature distribution. The heating of the processing chamber 201 by the heater 207 is continued at least until the processing of the wafer 200 is completed. However, when the wafer 200 is processed at room temperature, the heating of the processing chamber 201 by the heater 207 may not be performed.

[0065] Next, the rotation mechanism 267 rotates the wafer boat 217 and the wafers 200. The rotation of the wafer boat 217 and the wafers 200 by the rotation mechanism 267 is continued at least until the processing of the wafers 200 is completed.

[0066] Then, execute Figure 4 The sequence shown. Specifically, the film forming process has at least a film forming process and a modification process. The film forming process includes at least a raw material gas supply process. In addition, the film forming process may also include a raw material gas supply process and a reaction gas supply process. Moreover, the film forming process may also include a raw material gas supply process, a raw material gas purge process (a process of exhausting the processing chamber 201, or supplying N2 gas to the processing chamber 201 to remove unreacted raw material gas or by-products in the processing chamber 201), a reaction gas supply process, and a reaction gas purge process, as in the case of a purge process. In the modification process, the film formed in the film forming process is modified. In this case, the film forming process and the modification process may be regarded as one cycle, and each process may be repeated, or the modification process may be performed after the film forming process is performed multiple times. In addition, the above-mentioned purge process may be included between the film forming process and the modification process.

[0067] [Raw material gas supply step (film formation step)]

[0068] First, the process of supplying the raw material gas to the processing chamber 201 will be described. Here, as an example, a method of supplying the raw material gas after storing it in the storage part 280 will be described. Figure 4In the supply process of the raw material gas shown in FIG. 1 , a process of supplying N2 gas to the process chamber 201, a process of supplying N2 gas to the process chamber 201 while supplying the raw material gas to the process chamber 201, and a process of supplying N2 gas to the process chamber 201 are sequentially performed. Specifically, in the initial process of supplying N2 gas to the process chamber 201, the exhaust of the process chamber 201 containing the wafer 200 is substantially stopped, and N2 gas is supplied to the process chamber 201 from the nozzle 249a extending in the vertical direction at a first inert gas flow rate. Furthermore, in the process of supplying N2 gas to the process chamber 201 while supplying the raw material gas to the process chamber 201, the exhaust of the process chamber 201 is substantially stopped, and the raw material gas stored in the storage portion 280 is supplied to the process chamber 201 from the nozzle 249a, and N2 gas is supplied to the process chamber 201 from the nozzle 249a at a second inert gas flow rate greater than the first inert gas flow rate. In the next step of supplying N2 gas to the processing chamber 201, N2 gas is supplied from the nozzle 249a at a first inert gas flow rate to the processing chamber 201 while the processing chamber 201 is exhausted from below. Here, the first exhaust line 230 is used for the exhaust of the step of supplying the raw material gas to the processing chamber 201.

[0069] In a state where the exhaust of the processing chamber 201 containing the wafer 200 is substantially stopped, N2 gas is supplied to the processing chamber 201 from the nozzle 249a extending in the vertical direction at a first inert gas flow rate. Figure 5 The control A of the shown sequence is performed for 1 second (1 s), for example.

[0070] In this process, Figure 1 As shown, valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 234e is opened, and valve 265 is closed. Furthermore, APC valves 242 and 244 are closed. Thus, by opening valve 243a and closing valve 265, the raw material gas is stored in storage section 280. Furthermore, by opening valve 243e, N2 gas is supplied from nozzle 249a to process chamber 201 at a first inert gas flow rate (for example, a predetermined value in the range of 0.5 to 3.0 [slm]). In addition, by opening valve 243d, N2 gas as a backflow prevention gas is supplied from nozzle 249b to process chamber 201 at a predetermined value in the range of 0.5 to 5.0 [slm]. Furthermore, by closing APC valves 242 and 244, exhaust of process chamber 201 is substantially stopped. At this time, the temperature of the heater 207 is set to a value such that the temperature of the wafer 200 becomes within a range of 300 to 600° C., for example.

[0071] In addition, the description of a numerical range such as "300 to 600°C" in this specification means that the lower limit and the upper limit are included in the range. Therefore, for example, "300 to 600°C" means "300°C or more and 600°C or less". The same applies to other numerical ranges.

[0072] Here, the state in which the exhaust of the processing chamber 201 is substantially stopped is a state in which the APC valves 242 and 244 as the on-off valves are substantially closed, and the exhaust of the processing chamber 201 is substantially stopped. "Substantially" includes the following states. That is, it includes a state in which the APC valves 242 and 244 are fully closed (completely closed) and the exhaust of the processing chamber 201 is stopped. In addition, "substantially" includes a state in which the APC valves 242 and 244 are slightly opened and the processing chamber 201 is slightly exhausted.

[0073] Here, the state in which the APC valves 242 and 244 are slightly opened and the process chamber 201 is slightly exhausted is a state in which the exhaust volume (exhaust rate) V [sccm] of the process chamber 201 per unit time is much smaller than the supply volume (supply rate) FB [sccm] of the N2 gas per unit time, that is, preferably FB>>V. Specifically, the state in which the APC valves 242 and 244 are slightly opened and the process chamber 201 is slightly exhausted is a state in which the supply volume FB of the N2 gas per unit time is within ±10% of the exhaust volume V of the process chamber 201 per unit time.

[0074] In this step, the gas is supplied in a state where the APC valves 242 and 244 are fully closed and the exhaust of the processing chamber 201 is stopped.

[0075] While the exhaust of the processing chamber 201 is substantially stopped, the source gas stored in the storage portion 280 is supplied to the processing chamber 201 from the nozzle 249a, and N2 gas is supplied to the processing chamber 201 from the nozzle 249a at a second inert gas flow rate greater than the first inert gas flow rate. Figure 5 The control B of the shown sequence is performed for 3 seconds, for example.

[0076] In this process, valve 243a is closed, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is opened. In addition, APC valves 242 and 244 are closed. In this way, by closing valve 243a and opening valve 265, the raw material gas (for example, a predetermined amount in the range of 100-250cc) stored in the storage part 280 is supplied to the processing chamber 201 from the nozzle 249a (so-called flash supply or flash flow). At this time, the raw material gas is instantly supplied to the processing chamber 201 in a large amount, and is slowly supplied to the processing chamber 201 in a small amount. In addition, by opening valve 243e and controlling MFC241e, N2 gas is supplied to the processing chamber 201 from the nozzle 249a at a second inert gas flow rate (for example, a predetermined value in the range of 1.5-4.5 [slm]) greater than the first inert gas flow rate. Thus, the raw material gas stored in the storage part 280 is pushed out by the N2 gas and supplied from the nozzle 249a to the processing chamber 201. In addition, by opening the valve 243d, N2 gas as a backflow prevention gas is supplied to the processing chamber 201 from the nozzle 249b at a predetermined value within the range of, for example, 1.0-5.0 [slm].

[0077] In the process of supplying the raw gas, the APC valve 244 starts to open and exhaust starts from the first exhaust line 230. Figure 5 The APC valve 244 starts to open from around 4 [s].

[0078] [Raw material gas purging step (film forming step)]

[0079] exist Figure 4 In the raw material gas purging process shown in FIG. 1 , N2 gas is supplied to the process chamber 201 from the nozzle 249a at a first inert gas flow rate while the process chamber 201 is exhausted. Figure 5 The control C of the timing shown is performed for 3 seconds.

[0080] In this purge process, valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is closed. In addition, APC valve 244 is opened to adjust the pressure of processing chamber 201 to a predetermined value within the range of 700 to 1200 [Pa]. In this way, by opening valve 243a and valve 265, the raw material gas starts to be stored in storage section 280 again. In addition, by opening valve 243e and controlling MFC 241e, N2 gas is supplied from nozzle 249a to processing chamber 201 at a first inert gas flow rate (for example, a predetermined value within the range of 1.3 to 1.7 [slm]). In addition, by opening valve 243d, N2 gas as a backflow prevention gas is supplied from nozzle 249b to processing chamber 201 at a predetermined value within the range of 1.3 to 1.7 [slm]. In addition, the above-mentioned process is performed by waiting for the reaction of the raw material gas supplied to the process chamber 201 after performing the process of supplying the raw material gas to the process chamber 201 in the state of the valve 243a being closed, but the process may also be performed by opening the valve 243a to allow the raw material gas to flow through the storage section 280. In this case, the flow rate of the raw material gas flowing in the process of supplying the raw material gas to the process chamber in the state of the valve 243a being closed may be referred to as the first raw material gas flow rate, and the flow rate of the raw material gas in the process performed by opening the valve 243a to allow the raw material gas to flow through the storage section 280 may be referred to as the second raw material gas flow rate (for example, a predetermined value within the range of 0.5 to 2.0 [slm]).

[0081] Thus, by supplying the raw material gas to the processing chamber 201, a raw material containing layer begins to form on the wafer 200 (underlayer on the surface) as the first layer. The raw material containing layer may be a layer, or may be an adsorption layer of the raw material gas, or may include both.

[0082] in addition, Figure 4 In the raw material gas purging process shown in FIG. 1 , the raw material gas remaining in the processing chamber 201 is removed and the processing chamber 201 is purged. Figure 5 The sequence shown is carried out by control D.

[0083] In this process, valve 243a is closed, valve 243b is closed, valve 243c is opened, valve 243d is opened, valve 243e is opened, and valve 265 is opened. In addition, APC valve 244 is opened. Thus, N2 gas is supplied from nozzle 249a to process chamber 201 by opening valves 243c, 243e, and 267. In addition, N2 gas is supplied from nozzle 249b to process chamber 201 by opening valve 243d.

[0084] Thus, in the raw material gas purge process for removing the raw material gas remaining in the processing chamber 201, the APC valve 244 is opened, and the gas in the processing chamber 201 is exhausted by the vacuum pump 246, and the raw material gas remaining in the processing chamber 201 that has not reacted or contributed to the formation of the raw material-containing layer is exhausted from the processing chamber 201 (residual gas removal). However, if a sufficient exhaust volume can be obtained, the APC valve 244 may not be fully opened. At this time, the valves 243c and 243d are opened to maintain the supply of N2 gas to the processing chamber 201. The N2 gas acts as a purge gas, thereby improving the effect of removing the raw material gas remaining in the processing chamber 201 that has not reacted or contributed to the formation of the raw material-containing layer from the processing chamber 201.

[0085] At this time, the gas remaining in the processing chamber 201 may not be completely eliminated, and the processing chamber 201 may not be completely purged. If the gas remaining in the processing chamber 201 is a trace amount, it will not have an adverse effect in the subsequent process. At this time, the flow rate of the N2 gas supplied to the processing chamber 201 does not need to be set to a large flow rate. For example, by supplying an amount equal to the volume of the processing chamber 201, a purge is performed to a degree that does not have an adverse effect in the subsequent process. In this way, by incompletely purging the processing chamber 201, the purge time is shortened and the processing capacity is improved. In addition, the consumption of N2 gas can also be suppressed to the necessary minimum.

[0086] [Reaction Gas Supply Step (Film Formation Step)]

[0087] exist Figure 4 In the reaction gas supply process shown in FIG. 1 , the reaction gas is supplied from the nozzle 249 b to the processing chamber 201. Figure 5 The control E is performed in the order shown.

[0088] In this process, valve 243a is opened, valve 243b is opened, valve 243c is closed, valve 243d is closed, valve 243e is opened, and valve 265 is closed. In addition, APC valve 244 is opened. In addition, voltage is applied between rod-shaped electrodes 269 and 270. That is, the plasma-excited gas is supplied to the processing chamber 201.

[0089] Thus, the valve 243a is opened, the valve 265 is closed, and the raw material gas is stored in the storage part 280. In addition, the valve 243e is opened, and N2 gas as a backflow prevention gas is supplied from the nozzle 249a to the processing chamber 201. Furthermore, the valve 243b is opened, and the reaction gas is supplied from the nozzle 249b to the processing chamber 201 at a predetermined value within the range of 0.5 to 10 [slm]. In addition, the APC valve 244 is opened, and the gas in the processing chamber 201 is exhausted by the vacuum pump 246. At this time, the temperature of the heater 207 is set to the same value as when the raw material gas is supplied.

[0090] As a result, the reaction gas undergoes a surface reaction (chemical adsorption) with the raw material-containing layer formed on the surface of the wafer 200 , and a desired film is formed on the wafer 200 .

[0091] [Reaction Gas Purge Step (Film Formation Step)]

[0092] exist Figure 4 In the reaction gas purge process shown in FIG. 1 , the reaction gas remaining in the processing chamber 201 is removed and the processing chamber 201 is purged. Figure 5 The control F of the sequence shown is performed. The reaction gas purge step is an example of the first purge step or the second purge step.

[0093] In this process, valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is closed. In addition, APC valve 244 is opened. In addition, the voltage applied between rod-shaped electrodes 269 and 270 is stopped.

[0094] Thus, the valve 243a is opened and the valve 265 is closed, and the raw material gas is stored in the storage part 280. In addition, the valve 243e is opened, and N2 gas is supplied from the nozzle 249a to the processing chamber 201. Furthermore, the valve 243d is opened, and N2 gas is supplied from the nozzle 249b to the processing chamber 201.

[0095] The above-mentioned steps are regarded as one cycle, and the cycle is performed one or more times (predetermined number of times) to form a film of a predetermined composition and a predetermined film thickness on the wafer 200. In addition, the thickness of the layer formed in each cycle is set to be smaller than the desired film thickness, and the above-mentioned cycle is repeated multiple times until the desired film thickness is formed.

[0096] In addition, the process of storing the raw material gas in the storage part 280 continues until a predetermined amount is stored by opening the valve 243a and closing the valve 265. For example, the process may continue until the step of supplying the reaction gas from the nozzle 249b to the processing chamber 201 and the step of removing the reaction gas remaining in the processing chamber 201.

[0097] Then, a reaction gas purge step ( Figure 5In the control F) shown in FIG. 1 , the exhaust line (exhaust system) is switched. Specifically, the gas piping (first exhaust line 230) of the exhaust system used when the raw material gas and the reaction gas are supplied (film forming process) is switched to the gas piping (second exhaust line 231) of the exhaust system used in the process of modifying the formed film. As described above, the flow path cross-sectional area of ​​the second exhaust line 231 is configured to be larger than the flow path cross-sectional area of ​​the first exhaust line 230. For example, the flow path cross-sectional area of ​​the second exhaust line 231 is configured to be more than twice the flow path cross-sectional area of ​​the first exhaust line 230.

[0098] Figure 6 The APC valve 244 of the first exhaust line 230 is fully closed, and the APC valve 242 of the second exhaust line 231 is opened. For example, in the purge process immediately before the modification process, valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is closed. Then, the APC valve 242 of the second exhaust line is opened to remove the reaction gas. In short, it is sufficient to set the state that exhaust can be performed through the second exhaust line before the modification process.

[0099] [Modification process]

[0100] Next, explain Figure 4 In this modification step, a film having a predetermined composition and a predetermined film thickness formed on the wafer 200 is modified.

[0101] In this process, valve 243a is opened, valve 243b is closed, valve 243c is closed, valve 243d is opened, valve 243e is opened, and valve 265 is closed. In addition, the APC valve 242 of the second exhaust line 231 is fully opened. In addition, voltage is applied to Figure 2 The rod-shaped electrodes 269 and 270 are shown. That is, the inert gas after plasma excitation is supplied to the processing chamber 201.

[0102] When the APC valve 242 of the second exhaust line 231 is opened, the gas (active species) after the plasma excitation in the processing chamber 201 is exhausted by the vacuum pump 246 through the second exhaust line 231 .

[0103] Thus, in the film forming step of forming a predetermined film on the wafer 200 , exhaust is performed through the APC valve 244 of the first exhaust line 230 , and in the modification step of modifying the film, exhaust is performed through the APC valve 242 of the second exhaust line 231 .

[0104] In the above embodiment, while exhausting gas through the first exhaust line 230, a film is formed on the wafer 200, and while exhausting gas from the first exhaust line 230 through the second exhaust line 231 having a large flow path cross-sectional area, the wafer 200 is modified. That is, the exhaust volume of the gas in the modification process in which the film is modified is larger than the exhaust volume of the gas in the film forming process in which the film is formed on the wafer 200. Thus, even if the supply amount of the modifier is increased, the low pressure is maintained, and the processing pressure is reduced. Such a low pressure can, for example, increase the mean free work of the activated modifier, thereby increasing the transport efficiency of the activated modifier.

[0105] In addition, by reducing the pressure, the modifier maintained activated can be supplied to the surface of the wafer 200, and in particular, the modifier maintained activated can be spread over the center of the wafer 200. Therefore, in this embodiment, the active species (activated modifier) ​​spreads over the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0106] In addition, by increasing the exhaust volume of the gas, the pressure can be reduced without reducing the gas flow rate, and it is expected that the supply volume of the modifier and the life of the plasma excitation gas (active species) can be balanced.

[0107] In addition, by switching from the first exhaust line 230 to the second exhaust line 231, the exhaust conductance can be reduced, thereby increasing the modifier or active species while maintaining a low pressure. With such a low pressure, the transport efficiency of the modifier or active species becomes greater. Therefore, as described above, the active species (activated modifier) ​​spreads throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0108] Here, the upper limit of the low pressure is determined based on whether the active species cannot be supplied to the center of the wafer 200, resulting in reduced in-plane uniformity. Moreover, the lower limit of the low pressure is determined based on whether the active species are not generated because the mean free process is too large (no collision with the wafer 200), or even if the active species are generated, the collision at the periphery of the wafer is reduced, the amount of active species generated is reduced, resulting in reduced in-plane uniformity.

[0109] In the present embodiment, by switching to the second exhaust line 231 and increasing the exhaust volume of the gas, it is possible to supply the modifier under the condition that the condition is within the range of the upper limit and the lower limit of the low pressure.

[0110] In addition, at this time, the temperature of the heater 207 can also be set to the same value as when the raw material gas is supplied.

[0111] [Purge and atmospheric pressure restoration]

[0112] Once the film forming process of forming a film of a predetermined composition and a predetermined film thickness is performed, the valves 243c, 243d, and 243e are opened, and N2 gas as an inert gas is supplied to the process chamber 201 from each of the gas supply pipes 232c, 232d, and 232e, and the gas is exhausted from the second exhaust line 231. The N2 gas acts as a purge gas, whereby the process chamber 201 is purged with the inert gas, and the gas or reaction by-products remaining in the process chamber 201 are removed (purged) from the process chamber 201. Then, the atmosphere of the process chamber 201 is replaced with the inert gas (inert gas replacement), and the pressure of the process chamber 201 is restored to normal pressure (atmospheric pressure restoration).

[0113] [Wafer boat unloading and wafer discharge]

[0114] Then, the sealing cover 219 is lowered by the wafer boat elevator 115, the lower end of the manifold 209 is opened, and the processed wafers 200 are carried out from the lower end of the manifold 209 to the outside of the reaction tube 203 while being supported by the wafer boat 217 (wafer boat unloading). Then, the processed wafers 200 are taken out of the wafer boat 217 (wafer unloading).

[0115] In addition, in the process of adjusting the pressure, in the process of reducing the pressure from the atmospheric pressure to the first pressure, the first exhaust line 230 is used to exhaust the process chamber 201, in the process of reducing the pressure from the first pressure to the second pressure, the second exhaust line 231 is used, and in the process of forming the processing pressure from the second pressure, the first exhaust line 230 can also be used to exhaust the process chamber 201. Thus, the time from atmospheric pressure to processing pressure can be shortened. In addition, vacuum exhaust is performed in any of the above processes, but purge gas can also be supplied in any of the processes.

[0116] [Modification 1]

[0117] Next, the modification example 1 is described. As described above, in the modification step, it is sufficient to increase the exhaust volume of the film forming step. Therefore, in the modification example 1, Figure 6 As shown, a gate valve 238 is provided in the second exhaust line 231 instead of the APC valve.

[0118] In such a configuration, the exhaust conduction can be reduced by switching from the first exhaust line 230 to the second exhaust line 231, thereby increasing the modifier or active species while maintaining a low pressure. With such a low pressure, the transport efficiency of the modifier or active species becomes greater. Therefore, as described above, the active species (activated modifier) ​​spreads throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0119] [Modification 2]

[0120] Next, modification 2 is described. Modification 2 is an improved version of modification 1. Figure 6 As shown in FIG. 1 , a gate valve 238 is provided in place of the APC valve in the second exhaust line 231, and a vacuum pump 236 is provided as an exhaust device in the second exhaust line 231, downstream of the gate valve 238 and upstream of the confluence with the first exhaust line 230. In this configuration, when exhaust is performed via the gate valve 238, the vacuum pumps 236 and 246 are operated.

[0121] In this configuration, in addition to the configuration of variant example 1, by operating the vacuum pump 236, a lower pressure can be expected than in variant example 1. As a result, the exhaust conduction can be reduced, so the low pressure can be maintained while increasing the modifier or active species. With such a low pressure, the transport efficiency of the modifier or active species will be increased. As described above, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved. However, in this case, there is a concern that increasing the exhaust capacity of the vacuum pump 236 will cause the pressure to be too low. In this way, the mean free engineering will become too large (without conflicting with the wafer 200) and the active species will not be generated.

[0122] <Other Embodiments>

[0123] Next, other embodiments are described. In other embodiments, Figure 7 As shown, a vacuum pump as an exhaust device is provided in each of the first exhaust line 230 and the second exhaust line 231 .

[0124] Specifically, the gate valve 238 is provided in the second exhaust line 231. In addition, the first exhaust line 231 is branched from the upstream of the gate valve 238 in the second exhaust line 231, and does not merge with the second exhaust line 231.

[0125] The first exhaust line 230 is provided with an APC valve 244 and a vacuum pump 248 disposed downstream of the APC valve 244. The exhaust performance of the vacuum pump 248 is weaker than that of the vacuum pump 246. In other words, the exhaust performance of the vacuum pump 246 is stronger than that of the vacuum pump 248.

[0126] In this configuration, during the film forming process, the APC valve 244 of the first exhaust line 230 is opened, and the gate valve 238 of the second exhaust line 231 is closed. Furthermore, the vacuum pump 248 is operated. Thus, during the film forming process, exhaust is performed through the APC valve 244 of the first exhaust line 230.

[0127] In addition, in the modification process, the APC valve 244 of the first exhaust line 230 is fully opened, and the gate valve 238 of the second exhaust line 231 is opened. Furthermore, the vacuum pumps 246 and 248 are operated. Thus, in the modification process, exhaust is performed via the APC valve 244 of the first exhaust line 230, and exhaust is performed via the gate valve 238 of the second exhaust line 231. Alternatively, in the modification process, the APC valve 244 of the first exhaust line 230 is closed, and the gate valve 238 of the second exhaust line 231 is opened. Furthermore, the vacuum pump 246 is operated. Thus, in the modification process, exhaust is performed via the gate valve 238 of the second exhaust line 231.

[0128] In such a configuration, the vacuum pump 248 provided in the first exhaust line is compared with the vacuum pump 246 provided in the second exhaust line. Since the exhaust capacity of the vacuum pump 246 is high, the exhaust conduction can be reduced by switching from the first exhaust line 230 to the second exhaust line 231, and the modifier or active species can be increased while maintaining a low pressure. With such a low pressure, the transport efficiency of the modifier or active species becomes greater. Therefore, as described above, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0129] As described above, according to the present disclosure, one or more of the following effects can be obtained.

[0130] According to one method disclosed herein, the exhaust volume of the gas in the modification process is larger than the exhaust volume of the gas in the film forming process. By increasing the exhaust volume of the modification process in this way, the low pressure can be maintained even if the supply of the modifier is increased, and the processing pressure can be further reduced. With such a low pressure, the delivery efficiency of the activated modifier can be increased. Therefore, the active species (activated modifier) ​​is distributed throughout the wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0131] In addition, according to one method of the present disclosure, the active species of the modification process are activated by heat. Thus, by using an activated inert gas (modifier), the film density or impurities in the film can be improved, so that a film with good film quality can be formed at a low temperature. Moreover, by increasing the exhaust volume of the gas in the modification process, low pressure can be achieved without reducing the amount of active species activated by heat, and such low pressure can increase the transport efficiency of the active species activated by heat. Therefore, the active species (activated modifier) ​​are distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0132] In addition, according to one method of the present disclosure, the active species in the modification process are excited by plasma. Thus, by using an activated inert gas (modifier), the film density or impurities in the film can be improved, so that a film with good film quality can be formed at a low temperature. Moreover, by increasing the exhaust volume of the gas in the modification process, low pressure can be achieved without reducing the amount of active species excited by plasma. Such low pressure can increase the transport efficiency of the active species excited by plasma. Therefore, the active species (activated modifier) ​​are distributed throughout the wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0133] In addition, according to one mode of the present disclosure, a film having a predetermined film thickness can be formed by performing the film forming process and the modification process as one cycle for a predetermined number of times or more. Thus, even for a film having a predetermined film thickness, the pressure can be reduced without reducing the amount of the modifier in the modification process, and it can be expected that the supply amount of the modifier and the life of the active species can be taken into account. Moreover, the film density or impurities in the film can be improved by using active species, so a film with good film quality can be formed at a low temperature.

[0134] In addition, by performing the modification process after performing the film forming process multiple times, a film with a predetermined film thickness can be formed. Thus, even for a film with a predetermined film thickness, low pressure can be achieved without reducing the amount of the modifier in the modification process, and it can be expected that the supply amount of the modifier and the life of the active species can be taken into account. In addition, the film density or impurities in the film can be improved by using active species, so a film with good film quality can be formed at a low temperature.

[0135] In addition, there are: a first exhaust line 230, which is configured to exhaust the gas from the processing chamber 201 for processing the wafer 200; and a second exhaust line 231, which is configured to branch from the first exhaust line 230 in the middle, and has a larger flow path cross-sectional area than the flow path cross-sectional area of ​​the first exhaust line 230, and is configured to be able to exhaust through the first exhaust line 230 while forming a film on the wafer 200, and is configured to be able to switch from the first exhaust line 230 to the second exhaust line 231, and exhaust with a larger exhaust volume than the above-mentioned first exhaust line, while modifying the film. Thus, even if the supply amount of the modifier containing active species is increased, low pressure can be maintained, and the processing pressure can be reduced. By such a low pressure, the transportation efficiency of the activated modifier can be increased. Therefore, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0136] In addition, according to one embodiment of the present disclosure, the flow path cross-sectional area of ​​the second exhaust line 231 is configured to be more than twice the flow path cross-sectional area of ​​the first exhaust line 231. As a result, the exhaust volume of the gas in the process of modifying the film can be increased compared to the exhaust volume of the gas in the process of forming the film on the wafer 200, so even if the supply amount of the modifier is increased, the low pressure can be maintained, and the processing pressure can be further reduced. By such a low pressure, the transport efficiency of the activated modifier can be increased. Therefore, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0137] In addition, according to one method of the present disclosure, it is configured to switch from the first exhaust line 230 to the second exhaust line 231 after the film is formed on the wafer 200 and before the wafer is modified. In this way, by switching from the first exhaust line 230 to the second exhaust line 231, the exhaust conduction can be reduced, so that the modifier or active species can be increased while maintaining a low pressure. In this way, by maintaining a low pressure, the transport efficiency of the modifier or active species can be expanded. Therefore, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0138] In addition, according to one method of the present disclosure, after the film is formed on the wafer 200 and before the film is modified, during the purge of the processing chamber 201, it is configured to switch from the first exhaust line 230 to the second exhaust line 231. Thus, by switching from the first exhaust line 230 to the second exhaust line 231, the conduction can be reduced, so that the modifier or active species can be increased while maintaining a low pressure. By maintaining the low pressure in this way, the transport efficiency of the activated modifier or active species can be expanded. Therefore, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0139] According to one embodiment of the present disclosure, a vacuum pump 236 (see FIG. 2 ) is provided in the second exhaust line 231 as an exhaust device for exhausting the atmosphere of the processing chamber 201. Figure 7 ). In addition, the controller 121 is configured to operate the vacuum pump 236 when modifying the film. In this way, the processing chamber 201 is exhausted through the second exhaust line 231 by the vacuum pump 236, and the exhaust volume of the gas in the modification process becomes larger, which can increase the transport efficiency of the modifier or active species. Therefore, the active species (activated modifier) ​​is distributed throughout the wafer 200, so that the in-plane uniformity of the film thickness can be improved.

[0140] In addition, according to one embodiment of the present disclosure, the controller 121 is configured to exhaust gas from both the first exhaust line 230 and the second exhaust line 231 when modifying the film. Thus, the processing chamber 201 is exhausted from both the first exhaust line 230 and the second exhaust line 231, and the exhaust volume of gas in the modification process is increased, which can increase the transport efficiency of the modifying agent or active species. Therefore, the active species (activated modifying agent) is distributed throughout the wafer 200, so that the in-plane uniformity of the film thickness can be improved.

[0141] In addition, according to one embodiment of the present disclosure, by providing an activation section for activating a reaction gas, and supplying the reaction gas activated by the activation section, a film can be formed on the wafer 200. Specifically, by providing the rod-shaped electrodes 269, 270 and the electrode protection tube 275 as an activation section for activating an inert gas, and supplying the inert gas activated by the rod-shaped electrodes 269, 270 and the electrode protection tube 275 as the activation section, a film formed on the wafer 200 can be modified. In this way, the film density or impurities in the film can be improved by using the activated inert gas (modifier), so that a film with good film quality can be formed at a low temperature.

[0142] Furthermore, in such a configuration, the exhaust volume of the gas in the process of modifying the film can be further increased compared to the exhaust volume of the gas in the process of forming the film on the wafer 200, so even if the supply amount of the activated modifier is increased, the low pressure can be maintained, and the processing pressure can be further reduced. By such a low pressure, the transport efficiency of the activated modifier can be increased. Therefore, the active species (activated modifier) ​​is distributed throughout the entire wafer 200, so the in-plane uniformity of the film thickness can be improved.

[0143] Furthermore, according to one embodiment of the present disclosure, in the modification process, since no raw material gas or reaction gas is supplied, the generation of by-products is slight. Therefore, the attachment of by-products to the vacuum pump 246 can be suppressed, and the maintenance cost can be reduced. In addition, even the exhaust device of the pump type that is difficult to apply from the viewpoint of by-product attachment in the usual process can be applied.

[0144] In addition, although the present disclosure is described in detail with respect to a specific embodiment, the present disclosure is not limited to the relevant embodiment, and the relevant industry can obtain various other embodiments within the scope of the present disclosure. In addition, the above-mentioned aspects or modifications of the present disclosure can be used in combination as appropriate.

[0145] Furthermore, in the above-mentioned embodiment, the supply of the raw material gas is described using the flash flow supply, but it is of course not limited to the flash flow supply, and other supply methods may be used.

[0146] In addition, although not specifically described in the above embodiments, silicon-based raw materials, titanium-based raw materials (e.g., titanium tetrachloride), tantalum-based raw materials (e.g., tantalum pentachloride), hafnium-based raw materials (e.g., tetraethylmethylamino hafnium), zirconium-based raw materials (e.g., tetraethylmethylamino zirconium), aluminum-based raw materials (trimethylaluminum), etc. may be used as raw material gases.

[0147] In addition, although not particularly described in the above embodiment, N 2 gas is used as the inert gas, other gases such as Ar gas, He gas, Ne gas, and Xe gas may also be used.

[0148] Although not particularly described in the above-mentioned embodiments, the present application can be used not only in semiconductor manufacturing equipment but also in equipment for processing glass substrates such as LCD equipment.

[0149] In addition, although not specifically described in the above embodiments, the film forming process related to the present application can also be used for, for example, CVD, PVD, the formation of oxide films, nitride films or both, the formation of films containing metals, etc., and can also be used for annealing treatments, oxidation treatments, nitridation treatments, diffusion treatments, etc.

[0150] In addition, although not particularly described in the above-mentioned embodiment, each element is not limited to one and may exist in plurality unless otherwise specified.

[0151] Explanation of symbols

[0152] 201: Processing room

[0153] 230: First exhaust line (bypass exhaust line) 231: Second exhaust line (main exhaust line).

Claims

1. A substrate processing method, characterized in that: The above substrate processing method has the following advantages: A film forming step of forming a film on a substrate in a processing chamber; and In the treatment chamber, a modification step of modifying the film is performed. The exhaust volume of the gas from the processing chamber in the modifying step is set to be larger than the exhaust volume of the gas from the processing chamber in the film forming step.

2. The substrate processing method according to claim 1, characterized in that: The film forming step further comprises: a raw material gas supplying step of supplying the raw material gas to the substrate; and A reaction gas supplying step of supplying the reaction gas to the substrate.

3. The substrate processing method according to claim 2, characterized in that: Repeating the raw material gas supply step and the reactive gas supply step in that order, During the transition from the raw material gas supply process to the reaction gas supply process, or during the transition from the reaction gas supply process to the raw material gas supply process, there is a purging process for purging the processing chamber. The exhaust volume of the gas from the processing chamber in the modifying step is set to be larger than the exhaust volume of the gas from the processing chamber in the purging step.

4. The substrate processing method according to claim 2, characterized in that: A first purge step of purging the processing chamber is further provided between the reaction gas supply step and the modification step. In the first purge step, the exhaust amount is increased from the exhaust amount of the gas from the processing chamber in the reaction gas supply step to the exhaust amount of the gas from the processing chamber in the reforming step.

5. The substrate processing method according to claim 1, characterized in that: The active species in the above-mentioned modification step are activated by heat.

6. The substrate processing method according to claim 1, characterized in that: The active species in the above-mentioned modification step are excited by plasma.

7. The substrate processing method according to claim 1, characterized in that: The film forming step and the modifying step constitute one cycle, and are performed a predetermined number of times or more.

8. The substrate processing method according to claim 1, characterized in that: After the film forming step is performed a plurality of times, the modification step is performed.

9. The substrate processing method according to claim 1, characterized in that: A second purging step of purging the processing chamber is further provided between the film forming step and the modifying step. In the second purge step, the exhaust volume of the gas from the processing chamber in the film forming step is increased to the exhaust volume of the gas from the processing chamber in the modifying step.

10. A method for manufacturing a semiconductor device, characterized in that: The above manufacturing method has the following advantages: A film forming step of forming a film on a substrate in a processing chamber; and a modification step of modifying the above-mentioned membrane, The exhaust volume of the gas from the processing chamber in the modifying step is set to be larger than the exhaust volume of the gas from the processing chamber in the film forming step.

11. A substrate processing device, characterized in that: have: a first exhaust line configured to exhaust gas from a processing chamber in which a substrate is processed; a second exhaust line, the second exhaust line being branched from the first exhaust line midway and having a flow path cross-sectional area larger than that of the first exhaust line; and The control unit is configured to exhaust gas from the processing chamber via the first exhaust line while forming a film on the substrate, and is configured to switch from the first exhaust line to the second exhaust line so as to increase the exhaust volume compared to when forming a film on the substrate, and to modify the film while exhausting gas from the processing chamber.

12. The substrate processing apparatus according to claim 11, characterized in that: The flow path cross-sectional area of ​​the second exhaust line is configured to be twice or more the flow path cross-sectional area of ​​the first exhaust line.

13. The substrate processing apparatus according to claim 11, wherein: The control unit is configured to switch from the first exhaust line to the second exhaust line after forming a film on the substrate and before modifying the film.

14. The substrate processing apparatus according to claim 11, wherein: The control unit is configured to switch from the first exhaust line to the second exhaust line during purging of the processing chamber after forming a film on the substrate and before modifying the film.

15. The substrate processing apparatus according to claim 11, wherein: The second exhaust line is also provided with an exhaust device for evacuating the atmosphere of the processing chamber. The control unit is configured to operate the exhaust device when the film is modified.

16. The substrate processing apparatus according to claim 11, characterized in that: The control unit is configured to exhaust gas through both the first exhaust line and the second exhaust line when the film is modified.

17. The substrate processing apparatus according to claim 11, wherein: The substrate processing apparatus further comprises: a raw material gas pipeline for supplying a raw material gas to the substrate; and a reaction gas pipeline for supplying a reaction gas to the substrate. The control unit is configured to form a film on the substrate by supplying the source gas alone to the substrate, or by supplying both the source gas and the reaction gas to the substrate.

18. The substrate processing apparatus according to claim 17, wherein: The substrate processing apparatus further comprises an activation unit for activating the reaction gas. The substrate processing apparatus is configured to form a film on the substrate by supplying the reaction gas activated by the activation unit.

19. The substrate processing apparatus according to claim 11, wherein: The substrate processing apparatus further comprises an activation unit for activating the inert gas. The substrate processing apparatus is configured to modify a film formed on the substrate by supplying the inert gas activated by the activation unit.

20. A program executed by a substrate processing apparatus having a first exhaust line and a second exhaust line, wherein the first exhaust line is configured to exhaust gas from a processing chamber for processing a substrate, and the second exhaust line is configured such that the first exhaust line branches off from the middle and has a flow path cross-sectional area larger than that of the first exhaust line, characterized in that: The substrate processing device is configured to perform the following steps: forming a film on the substrate while exhausting the gas through the first exhaust line; and The film is modified while the exhaust is performed by switching from the first exhaust line to the second exhaust line and exhausting the gas at a larger amount than in the step of forming the film.

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